Insertion piece assembly
By using conductive top tooth and conductive suction cups in the insert component, combined with the doping of the silicon layer, the electrical performance measurement of the silicon wafer can solve the problem of double tablets or liquid with liquid with the solution during the transfer process, avoid pollution, and avoid pollution. And improve the yield rate.
Patent Information
- Application Number
- CN202421122302.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-22
- Publication Date
- 2025-01-28
- Estimated Expiration
- 2034-05-22
AI Technical Summary
During the transfer of silicon wafers from the wool making process to the diffusion process, there may be a problem of double sheets or liquid, resulting in more than two silicon wafers inserted into the quartz boat slot, or the residual liquid volatilization during the high-temperature diffusion process contamination of the quartz boat and diffusion Furnace pipe, causing product abnormality.
A piece of inserting components, including conductive top tooth and conductive suction cups, the top tooth and suction cup surface cover the silicon layer, and the electrical performance measurement of the silicon wafer is determined to determine whether there is a problem of dual or liquid.
Effectively avoid the pollution of silicon wafers to quartz boats and boats, silicon wafers and diffusion of furnace tubes, and improve product production yields.
Smart Images
Figure CN222421927U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of solar cell processing equipment, in particular to a plug-in component. Background Art
[0002] In the process of transferring silicon wafers from the texturing process to the diffusion process, a quartz boat is required for transfer, and silicon wafers that have gone through the texturing process may have problems such as "double wafers" or "liquid carryover". Double wafers refer to the situation where the silicon wafers cannot be separated smoothly as a single piece when transferred out of the texturing process, and the two silicon wafers stick together; liquid carryover refers to the situation where liquid remains on the surface of a single silicon wafer after wet treatment. Among them, the double wafer problem will cause more than two silicon wafers to be inserted into the quartz boat slot during the diffusion process, which is not conducive to the single-sided diffusion of the silicon wafer. The liquid carryover problem will cause the residual liquid to volatilize and contaminate the quartz boat and the diffusion furnace tube during the high-temperature diffusion process, and cause product abnormalities. The above problems can only be discovered when the silicon wafer is contaminated on the outside after the diffusion is completed or when the square resistance is tested, but at this time the loss caused by the abnormality has already occurred and is difficult to repair, affecting the product production yield. Utility Model Content
[0003] The purpose of the embodiments of the present application is to provide an insert assembly that can effectively measure the electrical properties of silicon wafers, so as to determine whether there are double wafers or liquid problems before the silicon wafers enter the quartz boat, avoid contamination of the quartz boat and the silicon wafers and diffusion furnace tubes in the boat by problematic silicon wafers, and improve product production yield.
[0004] In order to solve the above problems, in a first aspect, the present application provides a wafer inserting assembly for inserting a silicon wafer, the wafer inserting assembly comprising:
[0005] Top teeth, the top teeth are used to fix the silicon wafer;
[0006] A suction cup, the suction cup is used to absorb the silicon wafer and move the silicon wafer into the top teeth;
[0007] Wherein, the top tooth comprises a conductive top tooth body and a first doped silicon layer coated on the surface of the conductive top tooth body; and / or, the suction cup comprises a conductive suction cup body and a second doped silicon layer coated on the surface of the conductive suction cup body.
[0008] Further, the silicon wafer includes a first silicon wafer and a second silicon wafer, the suction cup includes a first suction cup for sucking the first silicon wafer and a second suction cup for sucking the second silicon wafer, and the first suction cup and the second suction cup are arranged opposite to each other to make the relative surfaces of the first silicon wafer and the second silicon wafer fit together;
[0009] The first silicon wafer and the second silicon wafer are used to be fixed in the same top tooth.
[0010] Further, the conductive top tooth body is a metal top tooth body, including one or more of an aluminum top tooth body, a copper top tooth body, and a stainless steel top tooth body; and / or, the conductive suction cup body is a metal suction cup body, including one or more of an aluminum suction cup body, a copper suction cup body, and a stainless steel suction cup body.
[0011] Further, the thickness of the first doped silicon layer is 0.5 μm to 100 μm; and / or the thickness of the second doped silicon layer is 0.5 μm to 100 μm.
[0012] Further, the first doped silicon layer is a phosphorus-doped silicon layer or a boron-doped silicon layer; and / or the second doped silicon layer is a phosphorus-doped silicon layer or a boron-doped silicon layer.
[0013] Furthermore, the surface of the suction cup used for adsorbing the silicon wafer is concave inwardly to form a groove, and the bottom of the groove is provided with an air suction hole penetrating the bottom of the groove.
[0014] Furthermore, the groove wall of the groove is an arc-shaped groove wall that is bent and convex outward.
[0015] Furthermore, one end of the top tooth is concave inwardly to form a receiving groove, and the receiving groove is used to place the silicon wafer;
[0016] The opening of the accommodating groove gradually expands outward from the groove bottom of the accommodating groove toward the groove top of the accommodating groove, and / or the groove wall located at the groove top of the accommodating groove is an arc-shaped groove wall that is bent and convex outward.
[0017] Furthermore, the opening width of the accommodating groove is 2 mm to 5 mm.
[0018] Furthermore, the top teeth include side teeth for fixing the side edges of the silicon wafer along the width direction of the silicon wafer, and bottom teeth for fixing the bottom edge of the silicon wafer.
[0019] Compared with the prior art, the beneficial effects of the embodiments of the present application are:
[0020] The insert assembly of the embodiment of the present application can perform effective electrical property measurements on silicon wafers before they enter the quartz boat for diffusion by providing conductive top teeth and / or suction cups to determine whether there are double wafers or liquid carryover problems, thereby avoiding contamination of the quartz boat and the silicon wafers and diffusion furnace tubes in the boat by the silicon wafers, and improving product production yield.
[0021] In the insert assembly of the embodiment of the present application, the main structure of the suction cup and / or the top teeth is a conductive body, and the surface of the conductive suction cup body and / or the conductive top teeth body is coated with a doped silicon layer. On the one hand, during the transfer of the silicon wafer, the top teeth and / or suction cup with a doped silicon layer on the surface are in contact with the silicon wafer, which is convenient for fixing the silicon wafer while causing no damage to the silicon wafer. On the other hand, under normal circumstances, the resistance of the silicon wafer is between 10Ω and 100Ω, but if double wafers or liquid are present, the resistance will be greater than or equal to 1Ω and less than 10Ω. By connecting a voltage to the conductive suction cup and / or the conductive top teeth, the resistance of the silicon wafer can be measured. If the resistivity is too low, it can be determined to be abnormal. After determining the abnormality, corresponding measures can be taken to prevent the problematic silicon wafer from entering and contaminating the quartz boat and the silicon wafers and diffusion furnace tubes in the boat, thereby improving the yield of product production. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0023] Figure 1 It is a schematic diagram of the structure of the insert chip assembly (with a silicon chip inserted) of the embodiment of the present application;
[0024] Figure 2 is a schematic diagram of the structure of the top gear provided in an embodiment of the present application;
[0025] Figure 3 is a schematic diagram of a silicon wafer fixed to a top tooth provided in an embodiment of the present application (when the number of silicon wafers is normal);
[0026] Figure 4 It is a schematic diagram of a silicon wafer fixed to a top tooth provided in an embodiment of the present application (when the number of silicon wafers is abnormal);
[0027] Figure 5 yes Figure 4 The enlarged schematic diagram of point A in the middle;
[0028] Figure 6 It is a side view of the insert chip assembly (with a silicon chip inserted) of the embodiment of the present application;
[0029] Figure 7 yes Figure 6 A magnified schematic diagram of point B in the middle.
[0030] Figure numerals: 1. insert assembly; 11. top tooth; 111. conductive top tooth body; 112. first doped silicon layer; 113. accommodating groove; 11a. first side tooth; 11b. second side tooth; 11c. first bottom tooth; 11d. second bottom tooth; 12. suction cup; 121. suction hole; 122. groove; 12a. first suction cup; 12b. second suction cup; 2. silicon wafer; 3. negative pressure air pipe. DETAILED DESCRIPTION
[0031] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0032] In the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.
[0033] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in this application can be understood according to specific circumstances.
[0034] In addition, the terms "installed", "set", "provided with", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0035] In addition, the terms "first", "second", etc. are mainly used to distinguish different devices, elements or components (the specific types and structures may be the same or different), and are not used to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise specified, "plurality" means two or more.
[0036] The technical solution provided in this application will be further described below in conjunction with embodiments and drawings.
[0037] In the solar cell preparation process, the silicon wafer after texturing needs to be transferred from the wet process basket to the quartz boat for single-sided diffusion. This process involves sucking the silicon wafer with a suction cup and inserting the silicon wafer into the top teeth. In the related art, a suction cup is used to suck up two silicon wafers from the wet process basket. As the suction cup moves, the two silicon wafers approach each other, are fixed by the top teeth, and then inserted into the quartz boat slot, so that two silicon wafers are inserted into each quartz boat slot, and one side of the silicon wafer is exposed to achieve single-sided diffusion. On the one hand, in this process, the silicon wafer contacts the suction cup and the top teeth, which may cause damage to the silicon wafer; on the other hand, the silicon wafers in the wet process basket are separated one by one by the wafer splitter, and there may be two silicon wafers that are not separated. If the silicon wafers are not separated in the texturing process, it will result in more than two silicon wafers being inserted into the quartz boat slot in the diffusion process, but three or more silicon wafers, which will make it difficult for the silicon wafer sandwiched in the middle to be diffused, which is not conducive to achieving single-sided diffusion of the silicon wafer.
[0038] In addition, during the texturing process, the silicon wafer is immersed in chemical reagents. After the texturing is completed, the liquid on the surface of the silicon wafer needs to be blown dry. If the two silicon wafers are not separated, the subsequent drying and blowing operations cannot completely dry the liquid between the two silicon wafers. During high-temperature diffusion, the volatilization of the liquid will cause abnormalities in the silicon wafers in the diffusion furnace tube. If the temperature is abnormal during the drying and blowing operation, even for a single silicon wafer, there may be residual liquid at the bottom. The silicon wafer is hydrophilic after diffusion. As long as there is a small amount of liquid, it will infiltrate the surface of the silicon wafer. In particular, the gaps between the silicon wafers are very small, and a very small amount of water will cover a large area, that is, a small amount of liquid residue will cause greater silicon wafer contamination. During the high-temperature diffusion process, the volatilization of the liquid will cause contamination of the quartz boat, the silicon wafers in the boat, and the diffusion furnace tube, causing product abnormalities. This abnormality can only be discovered when there is contamination on the appearance after the diffusion is completed or when the square resistance is tested after the diffusion, but the loss caused by the abnormality has already occurred.
[0039] In order to solve the above problems, Figure 1 As shown, the embodiment of the present application provides a plug assembly 1, including a top tooth 11 for fixing a silicon wafer 2 and a suction cup 12 for adsorbing the silicon wafer 2 and moving the silicon wafer 2 into the top tooth 11. In the plug assembly 1, the top tooth 11 includes a conductive top tooth body 111 and a first doped silicon layer 112 coated on the surface of the conductive top tooth body 111, as shown in FIG. Figure 2 As shown; and / or, the suction cup 12 includes a conductive suction cup body and a second doped silicon layer (not shown) coated on the surface of the conductive suction cup body.
[0040] In the present application, the top teeth refer to a structure having a closed end and a comb-tooth end. In an embodiment of the present application, the structure of the top teeth 11 and / or the suction cup 12 includes a conductive body and a doped silicon layer. The doped silicon layer can be a common polycrystalline silicon layer or amorphous silicon layer doped with phosphorus or boron. On the one hand, as a semiconductor conductive element, the polycrystalline silicon layer or amorphous silicon layer doped with phosphorus and boron has conductivity, and thus the top teeth 11 and / or the suction cup 12 also have conductivity. By connecting a voltage between the conductive suction cup 12 and / or the top teeth 11, the resistance of the silicon wafer 2 can be measured. Under normal circumstances, the resistance of the silicon wafer 2 is between 10Ω and 100Ω, but if double wafers or liquid are present, the resistance of the silicon wafer is greater than or equal to 1Ω and less than 10Ω. Based on this, the abnormality of double wafers or liquid in the middle of the silicon wafer 2 can be determined by resistance. This judgment is made before the silicon wafer 2 enters the quartz boat. After an abnormality occurs, corresponding processing can be carried out, including but not limited to isolating the problematic silicon wafer, wiping and cleaning the corresponding position, and avoiding the silicon wafer from contaminating the quartz boat and the silicon wafers and diffusion furnace tubes in the boat. In addition, double wafers or silicon wafers with liquid may also cause contamination of the top teeth 11 and the suction cup 12, which also need to be checked and processed in time after the abnormality is found. On the other hand, during the transfer process of the silicon wafer 2, the silicon wafer 2 contacts the top teeth 11 and / or the suction cup 12 with a doped silicon layer on the surface. The hardness of the doped silicon layer and the silicon wafer are similar, and the wear is relatively small, which can effectively reduce the friction damage between the silicon wafer and the top teeth and the suction cup.
[0041] Further, see Figure 1 to Figure 5 The silicon wafer 2 includes a first silicon wafer and a second silicon wafer, the suction cup 12 includes a first suction cup 12a for adsorbing the first silicon wafer and a second suction cup 12b for adsorbing the second silicon wafer, the first suction cup 12a and the second suction cup 12b are arranged opposite to each other, and are used to make the relative surfaces of the first silicon wafer and the second silicon wafer fit together; the first silicon wafer and the second silicon wafer are used to be fixed in the same top tooth 11.
[0042] It can be understood that the first silicon wafer and the second silicon wafer are located in different wet process baskets, and the first suction cup 12a and the second suction cup 12b absorb the first silicon wafer and the second silicon wafer from the wet process basket respectively. With the relative movement of the first suction cup 12a and the second suction cup 12b, the relative surfaces of the first silicon wafer and the second silicon wafer fit together and are then fixed in the top teeth 11. In the present application, the suction cup 12 and / or the top teeth 11 have the ability to conduct electricity, and at least one electrical contact is formed among the suction cup-silicon wafer-suction cup, suction cup-silicon wafer-top teeth, and top teeth-silicon wafer-top teeth to measure the resistance of the silicon wafer, and then determine whether there is a double wafer or liquid-carrying abnormality. As mentioned above, the silicon wafers in the wet process basket are separated into single pieces by a wafer splitter, and there may be a situation where two silicon wafers are not separated. When the first silicon wafer and the second silicon wafer are both single wafers, such as Figure 3As shown, two silicon wafers are fixed in the top teeth 11, and when the silicon wafers are transferred to the quartz boat, two silicon wafers are also fixed in each slot of the quartz boat to facilitate single-sided diffusion. When the first silicon wafer and the second silicon wafer are both single wafers, there is no liquid between the two silicon wafers. At this time, if there is no liquid on each silicon wafer, the resistance of the silicon wafer is between 10Ω and 100Ω; and if there is liquid on a silicon wafer, the resistance of the silicon wafer is greater than or equal to 1Ω and less than 10Ω. In the case where one of the first silicon wafer and the second silicon wafer is not a single wafer, for example, the first silicon wafer is two silicon wafers adhered together, that is, there is a double wafer problem, three silicon wafers are fixed in the top teeth 11, as shown in FIG. Figure 4 , Figure 5 As shown, this situation is not conducive to single-sided diffusion. It can be understood that when the first silicon wafer is two silicon wafers adhered together, there is liquid between the two silicon wafers, that is, the double wafer problem is often accompanied by the liquid problem. At this time, the silicon wafer resistance will be greater than or equal to 1Ω and less than 10Ω.
[0043] Furthermore, the conductive top tooth body 111 is a metal top tooth body, including one or more of an aluminum top tooth body, a copper top tooth body, and a stainless steel top tooth body; and / or, the conductive suction cup body is a metal suction cup body, including one or more of an aluminum suction cup body, a copper suction cup body, and a stainless steel suction cup body.
[0044] The metal body in the present application is to achieve good electrical conduction. Optionally, in the embodiment of the present application, a conductive body of aluminum, copper or its alloy is used, and the conductive body has good conductivity. In addition, the conductive body can also be other conductive metal bodies or conductive plastic bodies or conductive carbon material bodies, which are not limited in the present application.
[0045] Further, the first doped silicon layer 112 is a phosphorus doped silicon layer or a boron doped silicon layer; and / or, the second doped silicon layer is a phosphorus doped silicon layer or a boron doped silicon layer. The thickness of the first doped silicon layer 112 is 0.5 μm to 100 μm; and / or, the thickness of the second doped silicon layer is 0.5 μm to 100 μm.
[0046] Phosphorus and silicon are common semiconductor conductive elements in the silicon doping layer of solar cells. Combined with actual production, phosphorus-doped silicon layers or boron-doped silicon layers can be obtained without the introduction of new equipment or materials. The doped silicon layer needs to have a certain thickness to achieve conductivity, but it cannot be too thick to affect the suction force of the suction cup 12 on the silicon wafer 2 or the space for the top teeth 11 to fix the silicon wafer. Exemplarily, the thickness of the first doped silicon layer 112 is any value within the above range, including but not limited to 0.5μm, 1μm, 10μm, 30μm, 40μm, 50μm, 70μm, 80μm, 100μm, etc.; and / or, the thickness of the second doped silicon layer is any value within the above range, including but not limited to 0.5μm, 1μm, 10μm, 30μm, 40μm, 50μm, 70μm, 80μm, 100μm, etc.
[0047] The structure of the suction cup is further explained below.
[0048] Combination Figure 1 The negative pressure air pipe 3 is connected to the suction hole 121 on the suction cup 12. Under the action of negative pressure, the silicon wafer 2 is adsorbed on the surface of the suction cup 12. Figure 6 , Figure 7 As shown, in the embodiment of the present application, the surface of the suction cup 12 for adsorbing the silicon wafer 2 is concave toward itself to form a groove 122, the bottom of the groove 122 is provided with an air suction hole 121 penetrating the bottom of the groove, and the groove wall of the groove 122 is an arc-shaped groove wall that is bent and convex outward. The setting of the groove 122 can disperse the relatively concentrated pressure at the air suction hole 121, and avoid damage to the silicon wafer 2 caused by excessive local suction. Furthermore, the arc-shaped groove wall can avoid damage to the silicon wafer 2 at the sharp notch of the groove 122.
[0049] The structure of the top teeth is further explained below.
[0050] Furthermore, one end of the top tooth 11 is concave inwardly to form a receiving groove 113 for placing the silicon wafer 2, and the opening of the receiving groove 113 gradually expands from the bottom of the groove to the top of the groove (i.e. Figure 2 The opening of the middle accommodating groove 113 gradually widens from bottom to top), combined with Figure 1 to Figure 5 The silicon wafer is placed into the receiving groove 113 from top to bottom. The wider opening of the receiving groove 113 provides a larger insertion space for the silicon wafer, which is convenient for the silicon wafer to be inserted, while the relatively narrow groove bottom improves the fixation of the silicon wafer 2 relative to the top teeth 11. In addition, the groove wall at the top of the receiving groove 113 is an arc-shaped groove wall that is bent and convex outward, which can effectively avoid damage to the silicon wafer 2 at the sharp part of the groove of the receiving groove 113.
[0051] The opening width of the accommodating groove 113 is 2 mm to 5 mm, which matches the width of the quartz boat slot, so that the silicon wafer 2 can be stably placed in the top teeth 11. During the process of transferring the silicon wafer 2 to the quartz boat, the silicon wafer 2 will not slide or be damaged, which facilitates the loading of the silicon wafer 2 into the quartz boat.
[0052] As an optional embodiment, the top teeth 11 include three side teeth for fixing the side edges of the silicon wafer 2 along the width direction of the silicon wafer 2; as another optional embodiment, the top teeth 11 include one bottom tooth for fixing the bottom edge of the silicon wafer 2. If the resistance between any top teeth or between any top teeth and the suction cup is too low, it can be determined that there is an abnormality of "double wafer" or "liquid". As a preferred embodiment, if Figure 1 As shown, in the embodiment of the present application, the top teeth 11 include side teeth (first side teeth 11a and second side teeth 11b) for fixing the side edge of the silicon wafer 2 along the width direction of the silicon wafer 2, and bottom teeth (first bottom teeth 11c and second bottom teeth 11d) for fixing the bottom edge of the silicon wafer 2. This embodiment can not only determine whether there is an abnormality by measuring the resistance, but further, the two side teeth and the two bottom teeth can fix the silicon wafer 2 in the width direction and the length direction of the silicon wafer 2, so that it can be transferred more stably.
[0053] It should be noted that the wafer insertion device in the present application is not limited to use in the diffusion process, but can also be used in other processes that require determination of whether there are double wafers or liquid-carrying problems to insert silicon wafers.
[0054] The above is a detailed introduction to a plug-in assembly disclosed in the embodiment of the present application. The principle and implementation method of the present application are described in detail using specific examples. The description of the above embodiment is only used to help understand the technical solution and core invention of the embodiment of the present application. At the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as limiting the present application.
Claims
1. A chip insert assembly for inserting a silicon chip, characterized in that: The insert assembly comprises: Top teeth, the top teeth are used to fix the silicon wafer; A suction cup, the suction cup is used to absorb the silicon wafer and move the silicon wafer into the top teeth; Wherein, the top tooth comprises a conductive top tooth body and a first doped silicon layer coated on the surface of the conductive top tooth body; and / or, the suction cup comprises a conductive suction cup body and a second doped silicon layer coated on the surface of the conductive suction cup body.
2. The insert assembly according to claim 1, characterized in that: The silicon wafer comprises a first silicon wafer and a second silicon wafer, the suction cup comprises a first suction cup for sucking the first silicon wafer and a second suction cup for sucking the second silicon wafer, the first suction cup and the second suction cup are arranged opposite to each other, and are used to make the opposite surfaces of the first silicon wafer and the second silicon wafer fit together; The first silicon wafer and the second silicon wafer are used to be fixed in the same top tooth.
3. The insert assembly according to claim 1, characterized in that: The conductive top tooth body is a metal top tooth body, including one or more of an aluminum top tooth body, a copper top tooth body, and a stainless steel top tooth body; and / or, the conductive suction cup body is a metal suction cup body, including one or more of an aluminum suction cup body, a copper suction cup body, and a stainless steel suction cup body.
4. The insert assembly according to claim 1, characterized in that: The thickness of the first doped silicon layer is 0.5 μm to 100 μm; and / or the thickness of the second doped silicon layer is 0.5 μm to 100 μm.
5. The insert assembly according to claim 1, characterized in that: The first doped silicon layer is a phosphorus-doped silicon layer or a boron-doped silicon layer; and / or the second doped silicon layer is a phosphorus-doped silicon layer or a boron-doped silicon layer.
6. The insert assembly according to claim 1, characterized in that: The surface of the suction cup used for adsorbing the silicon wafer is concave inwardly to form a groove, and the bottom of the groove is provided with an air suction hole penetrating the bottom of the groove.
7. The insert assembly according to claim 6, characterized in that: The groove wall of the groove is an arc-shaped groove wall that is bent and convex outward.
8. The insert assembly according to claim 1, characterized in that: One end of the top tooth is concave inwardly to form a receiving groove, and the receiving groove is used to place the silicon wafer; The opening of the accommodating groove gradually expands outward from the groove bottom of the accommodating groove toward the groove top of the accommodating groove, and / or the groove wall located at the groove top of the accommodating groove is an arc-shaped groove wall that is bent and convex outward.
9. The insert assembly according to claim 8, characterized in that: The opening width of the accommodating groove is 2 mm to 5 mm.
10. The insert assembly according to any one of claims 1 to 9, characterized in that: The top teeth include side teeth for fixing the side edges of the silicon wafer along the width direction of the silicon wafer, and bottom teeth for fixing the bottom edge of the silicon wafer.