Heat-resistant and shock-resistant SGT-MOS device
By designing seismic and heat dissipation mechanisms in the SGT-MOS device, the problem of poor seismic performance and lack of protection of the device and lack of protection for the heat dissipation structure have been solved. Essence
Patent Information
- Application Number
- CN202421152452.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-24
- Publication Date
- 2025-01-28
- Estimated Expiration
- 2034-05-24
AI Technical Summary
Existing MOSFET devices have poor shock resistance when used and lack protection measures for the heat dissipation structure, which can easily cause damage or poor contact due to vibration or impact, affecting the thermal management and long-term stability of the device.
A SGT-MOS device with heat and earthquake resistance is designed, using a cooling mechanism with heat dissipation mesh, heat-conducting tank, heat conduction strip and wave-like heat dissipation plate, combined with the shock-resistant mechanism combined with the piston cylinder, piston rod and cushioning mucus. And earthquake resistance.
Through the shock of the shock -resistant mechanism, the protection device is exempted from damage to ensure the stable operation in the vibration environment; increase the heat dissipation area and efficiency through the heat dissipation mechanism, and improve the long -term stability and performance of the device.
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Figure CN222421963U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of MOSFET devices, in particular to a heat-resistant and shock-resistant SGT-MOS device. Background Art
[0002] SGT-MOS device, the full name of which is Shielded Gate Transistor (shielded gate trench) MOSFET, is an improved trench power MOSFET based on the traditional trench MOSFET (U-MOSFET).
[0003] SGT-MOSFET adds a polysilicon electrode under the gate electrode, namely the shielding electrode or coupling electrode, which is connected to the source electrode. This structure realizes the function of shielding the gate and the drift region, reduces the Miller capacitance, and thus speeds up the switching speed of the device. At the same time, it also realizes the charge coupling effect, reduces the critical electric field strength of the drift region, reduces the on-resistance of the device, and further reduces the switching loss.
[0004] At present, the prior art CN218351448U discloses a shielded gate groove type power MOSFET device, comprising a device body, both sides of the surface of the device body are fixedly connected with fixed plates, and a number of heat dissipation fins are fixedly connected between the two fixed plates, a protective shell is arranged on the surface of the device body, a number of heat dissipation grooves are opened on the surface of the protective shell, and limiting holes are opened on the left and right sides of the protective shell, a connecting plate is arranged at the bottom of the protective shell, a number of pin protection sleeves are fixedly connected to the bottom of the connecting plate, and limiting grooves are opened on the left and right sides of the top of the connecting plate; the utility model can protect the MOSFET device and the pins to avoid damage caused by external factors, and can also perform heat dissipation treatment on them and improve their service life, solving the problem that the current MOSFET device is inconvenient to dissipate heat and cannot protect the MOSFET device and its pins.
[0005] However, the above prior art still has the following problems:
[0006] 1. The anti-vibration performance is poor during use, the device lacks anti-vibration and shock-absorbing devices, and the device is installed on the PCB board of a machine that often vibrates: vibration or impact will cause certain damage to the device.
[0007] 2. The heat dissipation structure lacks protective measures. Vibration or impact may cause damage to the heat dissipation structure or poor contact, affecting the thermal management of the device and thus its long-term stability and performance. Summary of the invention
[0008] The utility model overcomes the shortcomings of the prior art and provides a heat-resistant and shock-resistant SGT-MOS device.
[0009] To achieve the above-mentioned purpose, the technical solution adopted by the utility model is: a heat-resistant and shock-resistant SGT-MOS device, comprising: a device body, a heat dissipation mechanism arranged on the device body, and an anti-shock mechanism arranged on the device body, characterized in that:
[0010] The device body is provided with a heat dissipation mesh cover, a plurality of grids are equidistantly arranged on the upper surface of the heat dissipation mesh cover, and a plurality of heat dissipation grids are equidistantly arranged on the side of the heat dissipation mesh cover; a plurality of heat conduction grooves are symmetrically arranged on the device body, a plurality of the heat conduction grooves are equidistantly arranged, a plurality of the heat conduction grooves extend from the bottom of the device body along the side to the upper surface of the device body, and a heat conduction strip is arranged on the heat conduction groove; a first insulating layer is provided at the bottom of the device body, and a plurality of second insulating layers are symmetrically provided on the side of the device body;
[0011] The heat dissipation mesh cover is provided with a plurality of fixing blocks, which are symmetrically distributed on the four corners inside the heat dissipation mesh cover, and the fixing blocks are fixedly connected to the heat dissipation mesh cover;
[0012] The heat dissipation mechanism comprises: a heat conducting plate arranged on the device body, and a plurality of heat dissipation plates arranged on the heat conducting plate; the plurality of heat dissipation plates are distributed at equal distances, and the heat dissipation plates are wavy;
[0013] The anti-vibration mechanism comprises: a plurality of piston cylinders arranged on a plurality of the fixing blocks, a piston rod arranged on the piston, and a buffering viscous liquid arranged inside the piston cylinder.
[0014] In a preferred embodiment of the utility model, the material of the heat conducting strip is aluminum alloy.
[0015] In a preferred embodiment of the utility model, the heat dissipation mesh cover is fixedly connected to the device body, and the heat conduction strip is embedded in the heat conduction groove.
[0016] In a preferred embodiment of the utility model, the upper surface of the first insulating layer abuts against the lower surfaces of several of the thermally conductive strips, and the first insulating layer is fixedly connected to the lower surface of the device body; the upper side surface of the second insulating layer abuts against several of the thermally conductive strips, and the second insulating layer is fixedly connected to the side surface of the device body.
[0017] In a preferred embodiment of the present invention, the first insulating layer material and the second insulating layer material are selected from aerogel.
[0018] In a preferred embodiment of the utility model, the heat conducting plate is made of a heat conducting silicone sheet.
[0019] In a preferred embodiment of the utility model, a plurality of the heat dissipation plates are fixedly connected to the heat conducting plate, the lower surfaces of the heat conducting plates are respectively in contact with the upper surface of the device body and the plurality of heat conducting strips, and the heat dissipation plate material is graphene.
[0020] In a preferred embodiment of the utility model, the buffering mucus material is a polymer synthetic material, which is composed of silicone polymer, rubber particles, insulating fillers such as aluminum oxide, silicon dioxide, etc., as well as a thickener and a stabilizer.
[0021] In a preferred embodiment of the utility model, a buffer block is provided on the end of the piston rod away from the piston, and the buffer block is fixedly connected to the piston rod; a mounting groove is provided on the buffer block, and the corner of the heat conducting plate abuts against the mounting groove, and the buffer block material is selected from silicone.
[0022] In a preferred embodiment of the utility model, a plurality of the piston cylinders are fixedly connected to a plurality of the fixing blocks, the piston rod is sleeved with the piston cylinder, and the buffering viscous liquid abuts against the piston rod and the piston cylinder respectively.
[0023] The utility model solves the defects existing in the background technology, and has the following beneficial effects:
[0024] (1) The utility model is provided with an anti-vibration mechanism. The buffering viscous liquid in the piston cylinder has a viscous resistance, which can be used to mitigate the impact of vertical vibration on the device. The buffer block has a certain anti-vibration ability, which can be used to mitigate the impact of horizontal vibration on the device. Compared with the traditional device, the anti-vibration design in the utility model mitigates the impact of vibration on the device, effectively protects the device from damage, and ensures the stable operation of the device in a vibration environment.
[0025] (2) The utility model is provided with a heat dissipation mechanism, and the heat conduction plate material uses a heat-conducting silicone sheet to conduct the heat inside the device to the heat dissipation plate and dissipate it into the air. The wavy heat dissipation plate design increases the heat dissipation area and improves the heat dissipation efficiency. Compared with traditional devices, the heat dissipation design in the utility model increases the heat dissipation area and improves the heat dissipation efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] The utility model is further described below in conjunction with the accompanying drawings and embodiments;
[0027] Figure 1 It is a general three-dimensional structural diagram of a preferred embodiment of the utility model;
[0028] Figure 2 It is a general three-dimensional half-section diagram of a preferred embodiment of the utility model;
[0029] Figure 3 It is a structural diagram of the heat dissipation mechanism of a preferred embodiment of the utility model;
[0030] Figure 4 It is a structural diagram of the anti-seismic mechanism of the preferred embodiment of the utility model;
[0031] In the figure: 1. device body; 2. heat dissipation mechanism; 3. anti-vibration mechanism; 4. heat dissipation mesh cover; 5. heat conduction plate; 6. heat dissipation plate; 7. piston cylinder; 8. piston rod; 9. buffer mucus; 10. buffer block; 11. heat conduction strip; 12. first insulating layer; 13. second insulating layer. DETAILED DESCRIPTION
[0032] The present invention will now be further described in detail in conjunction with the accompanying drawings and embodiments. These drawings are simplified schematic diagrams that only illustrate the basic structure of the present invention in a schematic manner, and therefore only show the components related to the present invention.
[0033] like Figure 1 , Figure 2 As shown, a heat-resistant and shock-resistant SGT-MOS device includes: a device body 1, a heat dissipation mechanism 2 arranged on the device body 1, and an anti-shock mechanism 3 arranged on the device body 1. The device body 1 serves as the basic structure of the entire SGT-MOS device and carries all functional components.
[0034] The device body 1 is provided with a heat dissipation mesh cover 4, a plurality of grids are equidistantly arranged on the upper surface of the heat dissipation mesh cover 4, and a plurality of heat dissipation grids are equidistantly arranged on the side of the heat dissipation mesh cover 4; a plurality of heat conduction grooves are symmetrically arranged on the device body 1, the plurality of heat conduction grooves are equidistantly arranged, the plurality of heat conduction grooves extend from the bottom of the device body 1 along the side to the upper surface of the device body 1, and heat conduction strips 11 are arranged on the heat conduction grooves; a first insulating layer 12 is provided at the bottom of the device body 1, and a plurality of second insulating layers 13 are symmetrically arranged on the side of the device body 1; the heat dissipation mesh cover 4 protects the internal heat dissipation structure;
[0035] The material of the heat conducting strip 11 is aluminum alloy, and the heat conducting strip 11 quickly conducts the heat at the bottom of the device body to the heat conducting plate 5, and then dissipates the heat to the air through the heat dissipation plate 6.
[0036] like Figure 3 As shown, the heat dissipation mesh cover 4 is fixedly connected to the device body 1, and the heat conduction strip 11 is embedded in the heat conduction groove.
[0037] The upper surface of the first insulating layer 12 abuts against the lower surfaces of the plurality of heat-conducting bars 11 , and the first insulating layer 12 is fixedly connected to the lower surface of the device body 1 ; the upper side surface of the second insulating layer 13 abuts against the plurality of heat-conducting bars 11 , and the second insulating layer 13 is fixedly connected to the side surface of the device body 1 .
[0038] Aerogel is selected as the material of the first insulating layer 12 and the second insulating layer 13. Aerogel is used as the material of the first insulating layer 12 and the second insulating layer 13 of the heat conducting plate 5 because of its excellent thermal insulation and insulation properties, which can significantly improve the thermal conductivity without affecting the performance of electronic components.
[0039] A plurality of fixing blocks are arranged on the heat dissipation mesh cover 4, and the fixing blocks are symmetrically distributed on the four corners inside the heat dissipation mesh cover 4, and the fixing blocks are fixedly connected to the heat dissipation mesh cover 4; the fixing blocks are used to fix the buffer anti-seismic structure.
[0040] The heat dissipation mechanism 2 includes: a heat conducting plate 5 arranged on the device body 1, and a plurality of heat dissipation plates 6 arranged on the heat conducting plate 5; the plurality of heat dissipation plates 6 are distributed at equal distances, and the heat dissipation plates 6 are wavy; the heat dissipation plates 6 are made of graphene material, and their unique wavy design increases the contact area with the air, and heat is exchanged through convection between the surface and the air, and finally the heat is dissipated into the air.
[0041] The heat conducting plate 5 is made of a heat conducting silicone sheet, which can significantly improve the heat dissipation efficiency due to its excellent thermal conductivity.
[0042] Several heat sinks 6 are fixedly connected to the heat conducting plate 5, and the lower surface of the heat conducting plate 5 is respectively in contact with the upper surface of the device body 1 and several heat conducting strips 11, and the heat sink 6 is made of graphene. Graphene material, due to its excellent thermal conductivity, can further accelerate heat dissipation.
[0043] like Figure 4 As shown, the anti-vibration mechanism 3 includes: a plurality of piston cylinders 7 arranged on a plurality of fixed blocks, a piston rod 8 arranged on the piston, and a buffering viscous liquid 9 arranged inside the piston cylinder 7. When the device is vibrated, the viscous resistance of the buffering viscous liquid 9 is used to mitigate the impact of the vibration on the device.
[0044] The buffer mucus 9 material is a polymer synthetic material, which is composed of silicone polymer, rubber particles, insulating fillers such as alumina, silica, etc., as well as thickeners and stabilizers. It is made of a polymer synthetic material, including silicone polymer, rubber particles, insulating fillers such as alumina, silica, etc., as well as thickeners and stabilizers. This material has good viscosity and insulation, can effectively absorb and disperse vibration energy, and protect the safe operation of the device.
[0045] A buffer block 10 is provided on the end of the piston rod 8 away from the piston, and the buffer block 10 is fixedly connected to the piston rod 8; a mounting groove is provided on the buffer block 10, and the corners of the heat conducting plate 5 abut against the mounting groove, and the material of the buffer block 10 is silicone. The buffer block 10 uses silicone material, which not only has good shock-absorbing performance, and is used to reduce the impact of horizontal vibration on the device, but also ensures close contact with the heat conducting plate 5, thereby enhancing the shock-resistant effect.
[0046] A plurality of piston cylinders 7 are fixedly connected to a plurality of fixed blocks, a piston rod 8 is sleeved with the piston cylinder 7, and a buffering viscous liquid 9 abuts against the piston rod 8 and the piston cylinder 7 respectively.
[0047] When the utility model is used, when heat is generated inside the SGT-MOS device, the heat generated inside the device body 1 is first conducted to the heat conducting strip 11 through the heat conducting groove inside the device body 1, and the aluminum alloy heat conducting strip 11 conducts the heat to the heat conducting plate 5, and the heat conducting plate 5 conducts the heat from the device body 1 to the heat dissipation plate 6. The heat exchange between the surface of the heat dissipation plate 6 and the air is convectively exchanged, and the heat is finally dissipated into the air. When the SGT-MOS device is vibrated, the buffer mucus 9 in the piston cylinder 7 generates resistance through its viscosity, which reduces the impact of the vibration in the vertical direction on the device. The piston rod 8 will produce relative displacement when vibrating, but due to the abutment with the buffer mucus 9 in the piston cylinder 7, its displacement is limited to a certain range. During vibration, the buffer block 10 always keeps in contact with the heat conducting plate 5.
[0048] Based on the ideal embodiment of the utility model, through the above description, relevant personnel can make various changes and modifications without departing from the technical concept of the utility model. The technical scope of the utility model is not limited to the content of the specification, and the technical scope must be determined according to the scope of the claims.
Claims
1. A heat-resistant and shock-resistant SGT-MOS device, comprising: A device body (1), a heat dissipation mechanism (2) arranged on the device body (1), and an anti-vibration mechanism (3) arranged on the device body (1), characterized in that: The device body (1) is provided with a heat dissipation mesh cover (4), the upper surface of the heat dissipation mesh cover (4) is provided with a plurality of grids at equal intervals, and the side of the heat dissipation mesh cover (4) is provided with a plurality of heat dissipation grids at equal intervals; the device body (1) is symmetrically provided with a plurality of heat conduction grooves, the plurality of heat conduction grooves are arranged at equal intervals, the plurality of heat conduction grooves extend from the bottom of the device body (1) along the side to the upper surface of the device body (1), and the heat conduction grooves are provided with heat conduction strips (11); the bottom of the device body (1) is provided with a first insulating layer (12), and the side of the device body (1) is symmetrically provided with a plurality of second insulating layers (13); A plurality of fixing blocks are arranged on the heat dissipation mesh cover (4), the fixing blocks are symmetrically distributed on four corners inside the heat dissipation mesh cover (4), and the fixing blocks are fixedly connected to the heat dissipation mesh cover (4); The heat dissipation mechanism (2) comprises: a heat conducting plate (5) arranged on the device body (1), and a plurality of heat dissipation plates (6) arranged on the heat conducting plate (5); the plurality of heat dissipation plates (6) are distributed at equal distances, and the heat dissipation plates (6) are wavy; The anti-vibration mechanism (3) comprises: a plurality of piston cylinders (7) arranged on a plurality of the fixing blocks, a piston rod (8) arranged on the piston, and a buffering viscous liquid (9) arranged inside the piston cylinder (7).
2. The heat-resistant and shock-resistant SGT-MOS device according to claim 1, characterized in that: The material of the heat conducting strip (11) is aluminum alloy.
3. The heat-resistant and shock-resistant SGT-MOS device according to claim 1, characterized in that: The heat dissipation mesh cover (4) is fixedly connected to the device body (1), and the heat conduction strip (11) is embedded in the heat conduction groove.
4. The heat-resistant and shock-resistant SGT-MOS device according to claim 1, characterized in that: The upper surface of the first insulating layer (12) abuts against the lower surfaces of the plurality of thermally conductive strips (11), and the first insulating layer (12) is fixedly connected to the lower surface of the device body (1); the upper side surface of the second insulating layer (13) abuts against the plurality of thermally conductive strips (11), and the second insulating layer (13) is fixedly connected to the side surface of the device body (1).
5. The heat-resistant and shock-resistant SGT-MOS device according to claim 1, characterized in that: The material of the first insulating layer (12) and the material of the second insulating layer (13) are aerogels.
6. The heat-resistant and shock-resistant SGT-MOS device according to claim 1, characterized in that: The heat conducting plate (5) is made of a heat conducting silicone sheet.
7. The heat-resistant and shock-resistant SGT-MOS device according to claim 1, characterized in that: The plurality of heat dissipation plates (6) are fixedly connected to the heat conducting plate (5); the lower surface of the heat conducting plate (5) is respectively in contact with the upper surface of the device body (1) and the plurality of heat conducting strips (11); and the heat dissipation plates (6) are made of graphene.
8. The heat-resistant and shock-resistant SGT-MOS device according to claim 1, characterized in that: A buffer block (10) is provided on the end of the piston rod (8) away from the piston, and the buffer block (10) is fixedly connected to the piston rod (8); a mounting groove is provided on the buffer block (10), and the corner of the heat conducting plate (5) abuts against the mounting groove, and the material of the buffer block (10) is silicone.
9. The heat-resistant and shock-resistant SGT-MOS device according to claim 1, characterized in that: The plurality of piston cylinders (7) are fixedly connected to the plurality of fixed blocks, the piston rod (8) is sleeved with the piston cylinder (7), and the buffering viscous liquid (9) abuts against the piston rod (8) and the piston cylinder (7), respectively.
Citation Information
Patent Citations
Shield gate groove type power MOSFET device
CN218351448U