Silicon carbide epitaxial growth reaction chamber
By designing the structure of a semicircular heating element and a connecting plate in the silicon carbide epitaxial growth reaction chamber, the heating element is fixed to prevent relative rotation, and threaded connection with the first end plate with the insulation cylinder to reduce the gap, the existing reaction is solved The problem of changing the heat dissipation path in the room and poor insulation effect achieves stable temperature field distribution and efficient insulation effect.
Patent Information
- Application Number
- CN202420706255.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-08
- Publication Date
- 2025-02-07
- Estimated Expiration
- 2034-04-08
AI Technical Summary
During the installation or use of the existing silicon carbide epitaxial growth reaction chamber, the graphite heating body may rotate relatively, causing the heat dissipation path to change and affect the temperature field distribution of the reaction room; at the same time, the gap between the insulation end plate and the outer insulation layer will cause heat loss. , poor insulation effect.
A silicon carbide epitaxial growth reaction chamber including a semicircular first heating element and a second heating element is designed. By providing a structure of the first end plate and the connecting plate, the heating element is fixed to prevent relative rotation, and passes through the insulation cylinder. The threaded connection with the first end plate reduces the gap and improves the insulation effect.
It effectively prevents the relative rotation of the heating element during use, stabilizes the temperature field distribution of the reaction room, and improves the insulation effect by reducing gaps and improving the overall performance of the reaction room.
Smart Images
Figure CN222434682U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a silicon carbide epitaxial growth reaction chamber. Background Art
[0002] Silicon carbide semiconductors have excellent properties such as large bandgap, excellent stability, high thermal conductivity, high critical breakdown field strength, and high saturated electron drift velocity. They are ideal semiconductor materials for making high-temperature, high-frequency, high-power and strong radiation power electronic devices. The silicon carbide material used to make silicon carbide devices is usually a silicon carbide epitaxial wafer grown on a silicon carbide substrate.
[0003] Epitaxial furnace is a key equipment for preparing epitaxial wafers. For epitaxial furnace, a clean reaction chamber with uniform temperature and airflow distribution is the basis for preparing high-quality epitaxial wafers with uniform doping concentration, low defect density, and a stable reaction chamber is a necessary prerequisite for mass production of epitaxial wafers. There are many factors that affect the uniformity of temperature distribution, cleanliness and stability of the reaction chamber, among which the insulation graphite cavity structure, surface material, position, etc. of the reaction chamber are important parameters. Especially in the SiC epitaxial process, factors such as whether the graphite heating element in the reaction chamber is horizontal, whether the relative position of the graphite heating element and the outer insulation layer changes, and the wrapping of the outer insulation layer will directly affect the distribution of the temperature field inside the reaction chamber, and thus have a huge impact on the process results.
[0004] At present, in order to keep the reaction chamber warm, an outer insulation layer composed of graphite carbon felt is usually sheathed on the outside of the graphite heating element, and then an insulation end plate is set at each end of the graphite heating element to achieve insulation of the heating element. Among them, the graphite heating element is generally a horizontally placed cylindrical heating element. The area near the horizontal interface of the two semi-cylinders of the cylindrical graphite heating element is a relatively low temperature area. The outer insulation layer includes an arc-shaped first insulation layer and a second insulation layer. The first insulation layer and the second insulation layer cooperate with each other to form a hollow cylinder. The matching gap between the first insulation layer and the second insulation layer can be used as a heat dissipation channel for the graphite heating element. Specifically, the heat of the heating element is mainly dissipated from the horizontal interface of the two semi-cylinders through this matching gap. By adjusting the position of the matching gap between the first insulation layer and the second insulation layer, the heat dissipation path can be changed, thereby adjusting the temperature field distribution of the reaction chamber. However, this structure has the following problems:
[0005] 1. During installation or use, the graphite heating element will rotate relatively in the outer insulation layer, causing the heat dissipation path to change, thus affecting the temperature field distribution of the reaction room.
[0006] 2. The insulation end plate and the outer insulation layer are independent components. There is a gap between them. Part of the heat of the heating element will dissipate from the gap, which is not conducive to heat preservation and has a poor insulation effect.
[0007] Therefore, it is necessary to provide a silicon carbide epitaxial growth reaction chamber to solve the above technical problems. Utility Model Content
[0008] In order to solve the above technical problems, the utility model provides a silicon carbide epitaxial growth reaction chamber.
[0009] The utility model provides a silicon carbide epitaxial growth reaction chamber, comprising: a semicircular first heating element and a second heating element, the shapes of the first heating element and the second heating element are adapted to each other to form a hollow cylinder, a placement groove is provided at the top end of the interior of the second heating element, a first connecting plate is sleeved on the outer surface of the first heating element, a second connecting plate is sleeved on the outer surface of the second heating element, a first connecting hole and a second connecting hole are respectively provided on the end faces of the first connecting plate and the second connecting plate, the first connecting hole and the second connecting hole are respectively movably connected to a first connecting shaft and a second connecting shaft, the first connecting shaft and the second connecting shaft are respectively arranged on the upper half and the lower half of a side surface of the first end plate, a first mounting groove is provided on the end face of the first end plate outside the first connecting shaft, the first mounting groove is threadedly connected to a heat preservation tube, and the first heating element and the second heating element are located on the inner side of the heat preservation tube.
[0010] Preferably, a connecting groove is provided at the bottom of the first heating element, and a connecting plate matching the connecting groove is provided at the top of the second heating element.
[0011] Preferably, the outer surfaces of the first connecting shaft and the second connecting shaft are respectively provided with a first external thread and a second external thread, the first external thread is threadedly connected to the first nut, and the second external thread is threadedly connected to the second nut.
[0012] Preferably, a temperature measuring hole and a feed hole are provided on the end face of the first end plate, and a discharge hole is provided on the end face of the insulation tube away from the first end face, the discharge hole is arranged opposite to the feed hole, the feed hole is located in the middle of the first end plate, and the discharge hole is located in the middle of the end face of the insulation tube.
[0013] Preferably, the feed hole is internally movably connected to a feed baffle, the discharge hole is internally movably connected to a discharge baffle, and the temperature measuring hole is threadedly connected to a protective plug.
[0014] Preferably, the two ends of the outer surface of the thermal insulation cylinder are respectively sleeved with a first rotating plate and a second rotating plate, the end surfaces of the first rotating plate and the second rotating plate are respectively rotatably connected to the two ends of the outer thermal insulation cylinder, and a heat dissipation gap is provided on the side of the outer thermal insulation cylinder.
[0015] Compared with the related art, the silicon carbide epitaxial growth reaction chamber provided by the utility model has the following beneficial effects:
[0016] 1. The utility model provides a first end plate, and the first connecting hole and the second connecting hole can be movably connected through the first connecting shaft and the second connecting shaft respectively, and the first connecting plate and the second connecting plate are connected through the first end plate, so as to fix the first heating element and the second heating element. During use, the first heating element and the second heating element can be prevented from rotating relative to each other in the heat preservation tube, resulting in a change in the heat dissipation path, thereby affecting the temperature field distribution of the reaction chamber;
[0017] 2. The utility model can seal one end of the first heating element and the second heating element through the first end plate, and can seal the other parts of the first heating element and the second heating element through the insulation tube, which cooperates with the first end plate, so as to achieve the insulation of the first heating element and the second heating element. In addition, since the insulation tube is threadedly connected to the first end plate, the self-locking property of the threaded connection can be used to effectively reduce the gap and improve the insulation effect.
[0018] 3. The utility model provides a first nut and a second nut that can be threadedly connected to the first connecting shaft and the second connecting shaft respectively. The first connecting shaft and the second connecting shaft can be locked on the first connecting plate and the second connecting plate respectively through the first nut and the second nut, thereby improving the tightness of the connection. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 A schematic structural diagram of a preferred embodiment of a silicon carbide epitaxial growth reaction chamber provided by the utility model;
[0020] Figure 2 for Figure 1 A schematic structural diagram of a silicon carbide epitaxial growth reaction chamber from a rear perspective is shown;
[0021] Figure 3 for Figure 1 The structural schematic diagram of the heat preservation cylinder shown;
[0022] Figure 4 for Figure 1 A schematic diagram of the structure of the first heating element and the second heating element shown;
[0023] Figure 5 for Figure 1 A schematic structural diagram of the first connecting plate and the second connecting plate shown;
[0024] Figure 6 for Figure 1 The structural schematic diagram of the connecting groove and the connecting plate shown;
[0025] Figure 7 for Figure 1 A schematic structural diagram of the first end plate shown;
[0026] Numbers in the figure: 1. first end plate; 2. outer insulation cylinder; 3. first rotating plate; 4. second rotating plate; 5. heat dissipation gap; 6. feed baffle; 7. protective plug; 8. insulation cylinder; 9. discharge baffle; 10. discharge hole; 11. first mounting groove; 12. first connecting plate; 13. second connecting plate; 14. first nut; 15. second nut; 16. first heating element; 17. second heating element; 18. first connecting hole; 19. second connecting hole; 20. placement groove; 21. connecting plate; 22. connecting groove; 23. first connecting shaft; 24. second connecting shaft; 25. feed hole; 26. temperature measuring hole. DETAILED DESCRIPTION
[0027] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Generally, the components of the embodiment of the utility model described and shown in the drawings here can be arranged and designed in various different configurations.
[0028] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the present invention to be protected, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0029] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.
[0030] In the description of the embodiments of the present utility model, it should be noted that if the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or the orientation or position relationship in which the utility model product is usually placed when in use. It is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, if the terms "first", "second", "third", etc. appear, they are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.
[0031] In addition, the terms "horizontal", "vertical", "overhanging" and the like do not mean that the components must be absolutely horizontal or overhanging, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.
[0032] In the description of the embodiments of the present utility model, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.
[0033] A novel specific implementation of a silicon carbide epitaxial growth reaction chamber is described in detail below in conjunction with specific embodiments.
[0034] refer to Figures 1 to 7 The utility model provides a silicon carbide epitaxial growth reaction chamber, comprising: a semicircular first heating element 16 and a second heating element 17, the shapes of the first heating element 16 and the second heating element 17 are adapted to each other to form a hollow cylinder, a placement groove 20 is provided at the top of the inner part of the second heating element 17, a first connecting plate 12 is sleeved on the outer surface of the first heating element 16, and a second connecting plate 13 is sleeved on the outer surface of the second heating element 17, and a first connecting hole 18 and a second connecting hole 19 are respectively provided on the end faces of the first connecting plate 12 and the second connecting plate 13, and the first connecting hole 18 and the second connecting hole 19 are respectively movably connected to a first connecting shaft 23 and a second connecting shaft 24, and the first connecting shaft 23 and the second connecting shaft 24 are respectively arranged on the upper half and the lower half of one side of the first end plate 1, and a first mounting groove 11 is provided on the end face of the first end plate 1 outside the first connecting shaft 23, and the first mounting groove 11 is threadedly connected to the heat preservation tube 8, and the first heating element 16 and the second heating element 17 are located on the inner side of the heat preservation tube 8.
[0035] It should be noted that: by setting the first end plate 1, the first connecting hole 18 and the second connecting hole 19 can be movably connected respectively through the first connecting shaft 23 and the second connecting shaft 24, and the first connecting plate 12 and the second connecting plate 13 can be connected through the first end plate 1, so as to achieve the fixation of the first heating element 16 and the second heating element 17. During use, the first heating element 16 and the second heating element 17 can be prevented from relative rotation in the insulation tube 8, resulting in a change in the heat dissipation path, thereby affecting the temperature field distribution of the reaction room. The first end plate 1 can also seal one end of the first heating element 16 and the second heating element 17, and the insulation tube 8 is threadedly connected to the first mounting groove 11. The insulation tube 8 can cooperate with the first end plate 1 to seal other parts of the first heating element 16 and the second heating element 17, so as to achieve the insulation of the first heating element 16 and the second heating element 17. In addition, since the insulation tube 8 is threadedly connected to the first end plate 1 by setting the insulation tube 8, the self-locking property of the threaded connection can be used to effectively reduce the gap and improve the insulation effect.
[0036] In the embodiments of the present invention, reference is made to Figure 6 As shown, a connecting groove 22 is provided at the bottom of the first heating element 16 , and a connecting plate 21 matching with the connecting groove 22 is provided at the top of the second heating element 17 .
[0037] It should be noted that: by providing the connecting groove 22 and the connecting plate 21, it is convenient to connect the first heating element 16 and the second heating element 17 to each other, and the tightness of the connection can be effectively improved. The connecting plate 21 can reduce heat loss and improve the thermal insulation effect of the reaction chamber.
[0038] In the embodiments of the present invention, reference is made to Figure 4 As shown, the outer surfaces of the first connecting shaft 23 and the second connecting shaft 24 are respectively provided with a first external thread and a second external thread, the first external thread is threadedly connected to the first nut 14 , and the second external thread is threadedly connected to the second nut 15 .
[0039] It should be noted that: by providing the first nut 14 and the second nut 15 that can be threadedly connected to the first connecting shaft 23 and the second connecting shaft 24 respectively, the first connecting shaft 23 and the second connecting shaft 24 can be locked on the first connecting plate 12 and the second connecting plate 13 respectively through the first nut 14 and the second nut 15, thereby improving the tightness of the connection.
[0040] In the embodiments of the present invention, reference is made to Figure 3 , Figure 7As shown, a temperature measuring hole 26 and a feed hole 25 are provided on the end face of the first end plate 1, and a discharge hole 10 is provided on the end face of the insulation tube 8 away from the first end face 1. The discharge hole 10 is arranged opposite to the feed hole 25, and the feed hole 25 is located in the middle of the first end plate 1, and the discharge hole 10 is located in the middle of the end face of the insulation tube 8.
[0041] In the embodiments of the present invention, reference is made to Figure 1 , Figure 2 As shown, the feed hole 25 is internally movably connected to the feed baffle 6 , the discharge hole 10 is internally movably connected to the discharge baffle 9 , and the temperature measuring hole 26 is threadedly connected to the protective plug 7 .
[0042] It should be noted that: the temperature inside the reaction chamber can be measured through the temperature measuring hole 26, and the feed hole 25 and the discharge hole 10 can be used as the import and export of epitaxial wafers.
[0043] In the embodiments of the present invention, reference is made to Figure 1 As shown, the two ends of the outer surface of the insulation tube 8 are respectively sleeved with a first rotating plate 3 and a second rotating plate 4, and the end surfaces of the first rotating plate 3 and the second rotating plate 4 are respectively rotatably connected to the two ends of the outer insulation tube 2, and a heat dissipation gap 5 is provided on the side of the outer insulation tube 2.
[0044] It should be noted that: by providing an outer insulation tube 2 that can rotate on the outer wall of the insulation tube 8, and providing a heat dissipation slit 5 on the outer insulation tube 2, the position of the heat dissipation slit 5 can be adjusted by rotating the outer insulation tube 2, thereby changing the heat dissipation path and adjusting the temperature field distribution of the reaction chamber.
[0045] The working principle of a silicon carbide epitaxial growth reaction chamber provided by the utility model is as follows:
[0046] By setting the first end plate 1, the first connecting hole 18 and the second connecting hole 19 can be movably connected respectively through the first connecting shaft 23 and the second connecting shaft 24, and the first connecting plate 12 and the second connecting plate 13 can be connected through the first end plate 1, so as to achieve the fixation of the first heating element 16 and the second heating element 17. During use, the first heating element 16 and the second heating element 17 can be prevented from relative rotation in the insulation tube 8, resulting in a change in the heat dissipation path, thereby affecting the room temperature field distribution of the reaction chamber. The first end plate 1 can also seal one end of the first heating element 16 and the second heating element 17, and the insulation tube 8 is threadedly connected to the first mounting groove 11. The insulation tube 8 can cooperate with the first end plate 1 to seal other parts of the first heating element 16 and the second heating element 17, so as to achieve the insulation of the first heating element 16 and the second heating element 17. In addition, since the insulation tube 8 is threadedly connected to the first end plate 1 by setting the insulation tube 8, the self-locking property of the threaded connection can be used to effectively reduce the gap and improve the insulation effect.
[0047] The circuits and controls involved in the present invention are all prior art and will not be described in detail here.
[0048] The above description is only an embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the contents of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.
Claims
1. A silicon carbide epitaxial growth reaction chamber, characterized in that: include: A semicircular first heating element (16) and a second heating element (17), the shapes of the first heating element and the second heating element are adapted to each other to form a hollow cylinder, a placement groove (20) is provided on the inner side of the second heating element (17), a first connecting plate (12) is sleeved on the outer surface of the first heating element (16), a second connecting plate (13) is sleeved on the outer surface of the second heating element (17), and a first connecting hole (18) and a second connecting hole (13) are respectively provided on the first connecting plate (12) and the second connecting plate (13). The first connecting hole (18) and the second connecting hole (19) are respectively movably connected to the first connecting shaft (23) and the second connecting shaft (24); the first connecting shaft (23) and the second connecting shaft (24) are respectively arranged at the upper half and the lower half of a side surface of the first end plate (1); the first end plate (1) is provided with a first mounting groove (11); the first mounting groove (11) is threadedly connected to the heat preservation tube (8); the first heating element (16) and the second heating element (17) are located on the inner side of the heat preservation tube (8).
2. A silicon carbide epitaxial growth reaction chamber according to claim 1, characterized in that: A connecting groove (22) is provided at the bottom of the first heating element (16), and a connecting plate (21) matching with the connecting groove (22) is provided at the top of the second heating element (17).
3. A silicon carbide epitaxial growth reaction chamber according to claim 1, characterized in that: The outer surfaces of the first connecting shaft (23) and the second connecting shaft (24) are respectively provided with a first external thread and a second external thread, the first external thread is threadedly connected to the first nut (14), and the second external thread is threadedly connected to the second nut (15).
4. The silicon carbide epitaxial growth reaction chamber according to claim 1, characterized in that: The first end plate (1) is provided with a temperature measuring hole (26) and a feed hole (25); an end surface of the heat-insulating cylinder (8) away from the first end plate (1) is provided with a discharge hole (10); the discharge hole (10) and the feed hole (25) are arranged opposite to each other; the feed hole (25) is located in the middle of the first end plate (1); and the discharge hole (10) is located in the middle of the end surface of the heat-insulating cylinder (8).
5. A silicon carbide epitaxial growth reaction chamber according to claim 4, characterized in that: The feed hole (25) is internally movably connected to the feed baffle (6), the discharge hole (10) is internally movably connected to the discharge baffle (9), and the temperature measuring hole (26) is threadedly connected to the protective plug (7).
6. A silicon carbide epitaxial growth reaction chamber according to claim 5, characterized in that: The two ends of the outer surface of the heat-insulating tube (8) are respectively sleeved with a first rotating plate (3) and a second rotating plate (4), and the first rotating plate (3) and the second rotating plate (4) are respectively rotatably connected to the two ends of the outer heat-insulating tube (2), and the side surface of the outer heat-insulating tube (2) is provided with a heat dissipation slit (5).