Gas flow control device

Abstract

The utility model relates to a gas flow control device. The device mainly comprises a wafer storage device, a gas input device, a gas supply system, a gas inlet element, an input channel, a gas pressure maintaining channel, a first flow equalizing through hole, a first flow equalizing part, first uniform gas, a gas diffusion flow equalizing through hole, a gas diffusion flow equalizing part, diffusion uniform gas, a second flow equalizing through hole and a second flow equalizing part, the gas supply system can provide clean gas to the gas input device, the clean gas sequentially passes through the input channel and the gas pressure maintaining channel to reach the first flow equalizing piece, the first flow equalizing through hole conducts first-stage clean gas dispersion, then the gas diffusion flow equalizing piece conducts diffusion action on the clean gas, and the second flow equalizing through hole conducts diffusion action on the clean gas. And finally, the diffused clean gas is sprayed out in multiple directions through the second flow equalizing through holes, so that the clean gas in the wafer storage device is ventilated, and the clean gas can be uniformly spread to each place.

Description

Technical Field

[0001] The utility model provides a gas flow control device for a wafer storage device, in particular to a gas flow control device capable of providing uniform clean gas to each wafer. Background Art

[0002] Currently, wafer storage devices used to store or transport wafers have extremely high requirements for cleanliness. Therefore, a gas supply system is required to introduce clean gas into the wafer storage device to prevent the wafers from being contaminated by particles attached to the wafer storage device.

[0003] For example, in patent TWI832287B "Wafer storage device and method thereof", a gas inlet and outlet mechanism is provided on the wafer storage component, and the gas inlet and outlet mechanism is composed of a plurality of air inlet pipes and air outlet holes arranged on the wafer storage component, so that clean gas can be introduced into the wafer storage component according to demand.

[0004] It can be seen that introducing clean gas into the wafer storage device is a very important link in this field. If there is no such gas inlet and outlet mechanism, the wafer storage components will obviously be contaminated by particles.

[0005] However, the above wafer storage device and method do have the following problems and defects when used and need to be improved:

[0006] Although the above advantages can be achieved by introducing clean gas into the wafer storage device, there is only one air inlet pipe. When the clean gas is sprayed toward the wafer through the air inlet pipe, the clean gas can only be sprayed on the wafer directly in front of the air inlet pipe. Wafers or parts in other positions cannot be affected by the clean gas, so the degree of pollution cannot be effectively reduced. Moreover, since there is only a single air inlet pipe, the gas will be more concentrated and the spraying flow rate will be faster, which will cause vibration and impact on the wafer, which is not good for the wafer itself. Utility Model Content

[0007] The main purpose of the utility model is to allow the clean gas from the gas supply system to be evenly dispersed in the wafer storage device through the design of the first flow equalizer, the gas diffusion flow equalizer, and the second flow equalizer, so that all wafers in the wafer storage device can be affected by the clean gas to avoid contamination caused by the adhesion of particles.

[0008] The main structure of the utility model that can achieve the above-mentioned main purpose includes a wafer storage device, a gas input device is provided on one side of the wafer storage device, the gas input device is connected to a gas supply system, and the gas input device includes a gas intake element, the gas intake element has an input channel and a gas pressure maintaining channel connected to the input channel, and the gas intake element is provided with a first flow equalizing member on the side of the gas pressure maintaining channel, the first flow equalizing member has a plurality of first flow equalizing holes, so as to evenly disperse the clean gas from the gas pressure maintaining channel to form a first uniform gas, and then a gas diffusion flow equalizing member is provided on the side of the first flow equalizing member away from the gas pressure maintaining channel, the gas diffusion flow equalizing member has a plurality of gas diffusion flow equalizing holes, and the volume of the gas diffusion flow equalizing member is larger than the first flow equalizing member, so as to diffuse the first uniform gas over a large area to form a diffused uniform gas, and a second flow equalizing member is provided on the side of the gas diffusion flow equalizing member away from the first flow equalizing member, the second flow equalizing member has a plurality of second flow equalizing holes, so as to evenly disperse the diffused uniform gas again to form a second uniform gas.

[0009] When the gas supply system supplies clean gas, the clean gas can pass through the gas intake element of the gas input device, and reach the first flow equalizing component through the input channel and the gas pressure maintaining channel. Through the first flow equalizing hole on the first flow equalizing component, the clean gas can be molecularized to produce a first uniform gas. At this time, the first uniform gas passes through the gas diffusion flow equalizing hole of the gas diffusion flow equalizing component, so that the first uniform gas can fill the gas diffusion flow equalizing component to form a diffused uniform gas, and finally sprayed toward the wafer through the second flow equalizing hole on the second flow equalizing component to form a second uniform gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The preferred implementation scheme will be described below in a clear and understandable manner with reference to the accompanying drawings to further illustrate the above-mentioned characteristics, technical features, advantages and their implementation methods.

[0011] Figure 1 It is a stereogram of the first preferred embodiment of the utility model.

[0012] Figure 2 This is a first sectional view of the first preferred embodiment of the utility model.

[0013] Figure 3 This is an exploded view of the first preferred embodiment of the utility model.

[0014] Figure 4 The gas dispersion diagram of the first preferred embodiment of the utility model is shown in FIG. Figure 1 .

[0015] Figure 5 The gas dispersion diagram of the first preferred embodiment of the utility model is shown in FIG. Figure 2 .

[0016] Figure 6 The gas dispersion diagram of the first preferred embodiment of the utility model is shown in FIG. Figure 3 .

[0017] Figure 7 This is a schematic top view cross-sectional diagram of the clean gas flow direction of the second preferred embodiment of the utility model.

[0018] Figure 8 It is a three-dimensional schematic diagram of the third preferred embodiment of the utility model.

[0019] Fig. 9 It is a schematic diagram of a receiving portion of a fourth preferred embodiment of the utility model.

[0020] Fig.10 This is a schematic diagram of fixing of the fifth preferred embodiment of the utility model.

[0021] Fig.11 This is a cross-sectional view of a gas diffusion flow equalizing element according to the sixth preferred embodiment of the utility model.

[0022] Fig.12 A three-dimensional diagram of a vertical storage device according to the seventh preferred embodiment of the utility model Figure 1 .

[0023] Fig.13 A three-dimensional diagram of a vertical storage device according to the seventh preferred embodiment of the utility model Figure 2 .

[0024] Fig.14 It is a partially enlarged schematic diagram of the seventh preferred embodiment of the utility model.

[0025] Fig.15 It is a partial side view schematic diagram of the seventh preferred embodiment of the utility model.

[0026] Fig.16 This is a schematic diagram of the wafer lifting effect of the seventh preferred embodiment of the utility model.

[0027] Fig.17 This is a schematic diagram of the transport effect of the seventh preferred embodiment of the utility model.

[0028] Reference numerals:

[0029] Wafer storage device···1

[0030] Bracket·······11

[0031] Wafer storage parts····12

[0032] Base·······13

[0033] Drain hole······131

[0034] Upper cover·······14

[0035] Gas input device···2

[0036] Gas Intake Components···21

[0037] Input channel·····211

[0038] Gas pressure maintaining channel···212

[0039] Containment Department······213

[0040] The first current balancing device····22

[0041] First current sharing hole 221

[0042] Gas diffusion flow equalizer··23

[0043] Gas Diffusion Flow Perforation · 231

[0044] Diffusion channel·····232

[0045] Gas diffusion flow channel 233

[0046] Second current balancing device····24

[0047] Second current sharing hole 241

[0048] First outlet····2411

[0049] Second air outlet····2412

[0050] The third outlet...2413

[0051] Flow guide ······25

[0052] First limit fixing piece··26

[0053] Second limit fixing piece··27

[0054] Gas supply system·····3

[0055] Flow control parts····4

[0056] Sensors······5

[0057] Vertical storage device···6

[0058] Rotating mechanism·····61

[0059] Stand·······62

[0060] Carrying platform·····63

[0061] Lifting mechanism·····64

[0062] Lifting motor·····641

[0063] Lifting longitudinal track group··642

[0064] Raise your arms...643

[0065] Lifting parts······6431

[0066] Motor······6432

[0067] Lifting lateral track···644

[0068] Transport mechanism·····65

[0069] Transport longitudinal motor···651

[0070] Transport longitudinal track set··652

[0071] Carrying arm·····653

[0072] Support arm······6531

[0073] Transport motor·····654

[0074] Clean gas·····A

[0075] The first uniform gas...A1

[0076] Evenly diffused gas···A2

[0077] Second uniform gas···A3 DETAILED DESCRIPTION

[0078] In order to achieve the above-mentioned purpose and effect, the technical means and structure adopted by the utility model are described in detail with reference to the attached drawings, and the features and functions of the preferred embodiment of the utility model are as follows.

[0079] See also Figures 1 to 3 As shown, it is a three-dimensional view to an exploded view of the first preferred embodiment of the utility model. It can be clearly seen from the figure that the utility model includes:

[0080] a wafer storage device 1;

[0081] A gas input device 2 is provided at one side of the wafer storage device 1. The gas input device 2 is connected to a gas supply system. The gas input device 2 includes:

[0082] A gas inlet element 21 having an input channel 211 and a gas pressure-maintaining channel 212 connected to the input channel 211;

[0083] A first flow balancing member 22 provided on the gas inlet element 21 at the side of the gas pressure maintaining channel 212 and having a plurality of first flow balancing through holes 221, which is connected to the gas pressure maintaining channel 212 to evenly disperse the clean gas from the gas pressure maintaining channel 212 to form a first uniform gas;

[0084] A gas diffusion flow equalizing member 23 disposed at the side of the first flow equalizing member 22 away from the gas pressure maintaining channel 212 and having a plurality of gas diffusion flow equalizing through holes 231. The volume of the gas diffusion flow equalizing member 23 is larger than that of the first flow equalizing member 22 so as to diffuse the first uniform gas over a large area to form a diffused uniform gas; and

[0085] A second flow balancing member 24 is disposed on the side of the gas diffusion flow balancing member 23 away from the first flow balancing member 22 and has a plurality of second flow balancing through holes 241 to evenly disperse the diffused uniform gas again to form a second uniform gas.

[0086] The wafer storage device 1 is composed of a plurality of brackets 11, a plurality of wafer storage components 12 which are inserted through each of the brackets 11 and are used to store wafers, a base 13 which is arranged at the bottom of each of the brackets 11, and an upper cover 14 which is arranged at the top of each of the brackets 11, and a plurality of discharge holes 131 are arranged on the base 13 for discharging clean gas (inert gas).

[0087] The clean gas may be nitrogen (N2) gas, argon (Ar) gas, helium (He) gas, neon (Ne) gas, xenon (Xe) gas or other rare gases, and may be diluted with oxygen or moisture.

[0088] Wherein, the gas intake element 21 is a shell.

[0089] The first flow balancing member 22 , the second flow balancing member 24 , and the gas diffusion flow balancing member 23 are a plate.

[0090] The air supply system takes a pipe body connected to an air charging motor as an example.

[0091] See also Figures 1 to 6 As shown, it is a three-dimensional diagram of the first preferred embodiment of the utility model and a gas dispersion schematic diagram, which is composed of Figure 1 to Figure 6It can be clearly seen in the figure that when the environment inside the wafer storage device 1 is to be maintained to prevent the wafers from being contaminated by particles attached to the wafer storage device 1, the gas supply system can be started to start the inflation motor and inject the clean gas A into the input channel 211 through the gas supply system. The clean gas A then passes through the input channel 211 to reach the gas pressure maintaining channel 212. After reaching the gas pressure maintaining channel 212, it begins to flow to the first flow balancing member 22, and passes through the first flow balancing perforations 221 on the first flow balancing member 22, so that the clean gas A can be atomized and a first uniform gas A1 is generated (see the attached Figure 4 ), at this time, the first uniform gas A1 will pass through the gas diffusion flow through hole 231 of the gas diffusion flow equalizing member 23, so that the first uniform gas A1 can be filled in the gas diffusion flow equalizing member 23 to form a diffused uniform gas A2. The gas diffusion flow equalizing member 23 in this embodiment has a single diffusion channel 232 inside, taking the groove state as an example (see the attached Figure 5 ), finally, the diffused uniform gas A2 will pass through the second uniform flow through hole 241 on the second uniform flow member 24 and spray toward the wafer to form a second uniform gas A3. In this way, the second uniform gas A3 can be discharged from the discharge hole 131 below to form a circulation of the clean gas A (see the attached Figure 6 ).

[0092] It is worth mentioning that, since the volume of the gas diffusion flow equalizing component 23 is larger than that of the first flow equalizing component 22, the longitudinal length of the diffusion channel 232 is greater than the overall longitudinal length of the first flow equalizing component 22 in the longitudinal direction. Thus, the area of ​​the diffused uniform gas A2 is greater than the area of ​​the first uniform gas A1 in the longitudinal direction, and the longitudinal layout area of ​​the second flow equalizing hole 241 is equivalent to the longitudinal length of the diffusion channel 232, that is, the second uniform gas A3 can simultaneously spread the clean gas A to multiple stacked wafers placed in the wafer storage component 12, and can be discharged from the exhaust hole 131, so as to achieve the purpose of exchanging the clean gas A. Moreover, because the longitudinal layout length of the second flow equalizing hole 241 is also equivalent to the longitudinal stacking length of the wafer storage component 12, the clean gas A can be effectively spread to all the wafers, so that all the wafers can be prevented from being contaminated by the adhesion of particles.

[0093] The first flow equalizer 22 is fixed to one side of the gas inlet element 21 by bonding and tightening, and the gas diffusion flow equalizer 23 is fixed to one side of the gas inlet element 21 by screw locking. In this embodiment, the gas diffusion flow equalizer 23 is combined with the wafer storage device 1 by tightening or bonding on both sides, and the second flow equalizer 24 is fixed to the side of the gas diffusion flow equalizer 23 away from the first flow equalizer 22 by screw locking.

[0094] See attached Figure 7 , which is a schematic cross-sectional top view of the clean gas flow direction of the second preferred embodiment of the utility model. It can be clearly seen from the figure that the difference between this embodiment and the above embodiment is that the second flow-balancing through hole 241 of this embodiment has a plurality of first gas outlets 2411 facing a first direction, a plurality of second gas outlets 2412 facing a second direction, and a plurality of third gas outlets 2413 facing a third direction, and the first direction, the second direction, and the third direction are all facing different directions, and the gas diffusion flow-balancing member 23 A plurality of guide members 25 are provided on the side away from the first flow equalizing member 22 to guide the second uniform gas A3 from the first gas outlet 2411 and the third gas outlet 2413. In other words, the diffuse uniform gas A2 will be ejected from the first gas outlet 2411, the second gas outlet 2412, and the third gas outlet 2413 respectively. In this embodiment, the first direction is toward the left side of the wafer storage device, the second direction is toward the front of the wafer storage device, and the third direction is toward the right side of the wafer storage device. At this time, with the second When the first gas outlet 2411, the second gas outlet 2412, and the third gas outlet 2413 of the flow-balanced through hole 241 are in the state, the second uniform gas A3 passing through the first gas outlet 2411 will be ejected toward the first direction (left side), the second uniform gas A3 passing through the second gas outlet 2412 will be ejected toward the second direction (front), and the second uniform gas A3 passing through the third gas outlet 2413 will be ejected toward the third direction (right side), so that the left, middle, and right spaces in the wafer storage device can be cleaned with the gas A (first gas outlet 2413). The second uniform flow perforations 241 (i.e., the first outlet 2411, the second outlet 2412, and the third outlet 2413) are arranged in a longitudinal direction, so that the clean gas A can be distributed not only to the left, middle, and right spaces, but also to the bottom, middle, and upper spaces at the same time, so as to form a distribution pattern of the clean gas A in an all-round area, so that all wafers accommodated on the wafer storage unit 12 can be prevented from being contaminated by particles. In addition, the guide member 25 is designed with an inclined surface as a whole, and the clean gas A sprayed from the first outlet 2411 and the third outlet 2413 can be guided by the guide member 25, so that the clean gas A can be diffused to both sides along the inclined surface, so as to enhance the effect of the clean gas A distribution, and the direction error will not occur and reduce the overall effect.

[0095] The diffused uniform gas A2 and the second uniform gas A3 are the clean gas A, and the diffused uniform gas A2 and the second uniform gas A3 are only terms defined for the convenience of describing the present embodiment.

[0096] See attached Figure 8 FIG. 1 is a perspective schematic diagram of a third preferred embodiment of the utility model, Figure 8It can be clearly seen that the difference between this embodiment and the first preferred embodiment is that for the convenience of representation, the wafer storage component is hidden in this embodiment, wherein a flow control component 4 (which may be a manual throttle valve or a mass flow controller (MFC)) for adjusting the gas flow input into the wafer storage device 1 is provided on one side of the gas inlet element 21, and the wafer storage device 1 is provided with at least one sensor 5, which is communicated with the flow control component 4 to sense the environmental state in the wafer storage device 1 and provide environmental information to the flow control component 4 so that the gas flow can be adjusted by the flow control component 4, and the sensor 5 is one of an oxygen concentration sensor or a temperature and humidity sensor. Of course, the sensor 5 can also have the function of sensing oxygen concentration and temperature and humidity at the same time. Generally speaking, the oxygen concentration and humidity in the wafer storage device 1 cannot be too high. When they are too high, oxidation will occur. Therefore, the clean gas, which is an inert gas, can effectively dilute oxygen and moisture, thereby reducing the oxygen concentration and humidity in the wafer storage device 1. In other words, when the sensor 5 senses that the oxygen concentration or humidity inside the wafer storage device 1 is too high, it will transmit the sensing information to the flow control component 4 in a wired or wireless manner to increase the valve of the flow control component 4 and increase the intake volume of the clean gas, so that the clean gas can dilute oxygen or moisture faster and reduce the proportion of oxygen or moisture in the wafer storage device 1. This can effectively protect the wafer storage device 1 from oxidation.

[0097] See attached Fig. 9 As shown in FIG. 1 , it is a partial schematic diagram of the receiving portion of the fourth preferred embodiment of the utility model. It can be clearly seen from the figure that the difference between this embodiment and the first preferred embodiment is that the gas intake element 21 of this embodiment has a receiving portion 213 for accommodating the first flow equalizing component 22, and the receiving portion 213 takes a groove as an example, so that the first flow equalizing component 22 can be installed on the receiving portion 213 to achieve the limitation in four directions of up, down, left and right, which has the effect of strengthening the stability of the first flow equalizing component 22.

[0098] See attached Fig.101 is a schematic diagram of the fixing part of the fifth preferred embodiment of the utility model. It can be clearly seen from the figure that the difference between this embodiment and the first preferred embodiment is that a first limiting fixing member 26 which can be combined with the wafer storage device 1 in a threaded locking manner is provided at the upper part of one side of the gas diffusion flow equalizing member 23 of this embodiment, so that the gas diffusion flow equalizing member 23 can be combined with the one side of the wafer storage device 1 by the abutment and limiting of the first limiting fixing member 26, and a fixing member 26 which can be combined with the wafer storage device 1 and the gas diffusion flow equalizing member 2 is provided at the lower part of one side of the gas diffusion flow equalizing member 23. The second limiting fixture 27 is screw-locked and combined, so that the gas diffusion and flow equalizing component 23 can be combined with one side of the wafer storage device 1 by means of the fixing and limiting of the second limiting fixture 27. In this way, through the design of the first limiting fixture 26 and the second limiting fixture 27, the upper part of the gas diffusion and flow equalizing component 23 can be fixed and limited by the first limiting fixture 26, and the lower part can be fixed and limited by the second limiting fixture 27, so that it can be firmly fixed to the wafer storage device 1, which can effectively improve the stability of the gas diffusion and flow equalizing component 23 and avoid positional displacement.

[0099] See attached Fig.11 FIG. 1 is a cross-sectional view of a gas diffusion flow equalizing member according to a sixth preferred embodiment of the utility model, Fig.11 It can be clearly seen that the difference between this embodiment and the first preferred embodiment is that the gas diffusion equalizing flow component 23 of this embodiment has several gas diffusion equalizing flow channels 233 connected to the gas diffusion equalizing flow perforations 231, and the position of each second equalizing flow perforation 241 corresponds to each gas diffusion equalizing flow channel 233. Therefore, when the first uniform gas enters the gas diffusion equalizing flow component 23 through the gas diffusion equalizing flow perforations 231, the gas diffusion equalizing flow channels 233 in the gas diffusion equalizing flow component 23 can concentrate the first uniform gas into three branches, and then eject them respectively from the three rows of second equalizing flow perforations 241 corresponding to the positions of the three gas diffusion equalizing flow channels 233. This can effectively improve the effect of clean gas exhaust. In addition to being more uniform in flow, it can also be ejected in a concentrated manner, but the flow rate will not cause vibration of the wafer, and the overall uniform flow and directionality effects are further improved.

[0100] See attached Fig.12 ~Attached Fig.17 , which is a vertical storage device of the seventh preferred embodiment of the utility model Figure 1As for the transport diagram, the difference between this embodiment and the first preferred embodiment is that the wafer storage device 1 of this embodiment is arranged in a vertical storage device 6, and the vertical storage device 6 has a rotating mechanism 61. The rotating mechanism 61 is provided with a stand 62, and the stand 62 is provided with a plurality of supporting platforms 63 arranged in the longitudinal direction for supporting the wafer storage device 1, and a lifting mechanism 64 is provided on one side of the rotating mechanism 61 for lifting the wafer storage unit 12 stored in the wafer storage device 1, and a transport mechanism 65 is provided on one side of the rotating mechanism 61 for accessing the wafers in the wafer storage device 1.

[0101] The rotating mechanism 61 is exemplified by a rotating motor.

[0102] Among them, the lifting mechanism 64 has a lifting longitudinal rail group 642 combined with a lifting motor 641, and two lifting arms 643 movably arranged on the lifting longitudinal rail group 642, and the two lifting arms 643 are jointly pivoted on a lifting transverse rail 644, and the two lifting arms 643 are moved left and right on the lifting transverse rail 644 through air pressure or hydraulic means, and the two lifting arms 643 respectively have a lifting component 6431 that can lift the wafer storage component, and this lifting component 6431 can realize longitudinal movement through a motor 6432.

[0103] Among them, the lifting longitudinal track group 642 can be a mechanism of a lead screw, a belt combined with a sprocket, or a chain combined with a sprocket.

[0104] Among them, the transport mechanism 65 has a transport longitudinal track group 652 combined with a transport longitudinal motor 651, and a transport arm 653 movably arranged on the transport longitudinal track group 652. The transport arm 653 uses two sets of connecting rod joint components to form two arms 6531, and the two arms 6531 are combined with a transport motor 654 to enable it to move forward and backward.

[0105] The transport longitudinal track set 651 may be a mechanism of a lead screw, a belt combined with a sprocket, or a chain combined with a sprocket.

[0106] When the wafer needs to be taken or placed, taking the wafer storage device 1 on the top layer as an example, the rotating mechanism 61 can drive the stand 62 to rotate, so that the position of the wafer storage device 1 on one of the supporting platforms 63 can correspond to the lifting position of the lifting mechanism 64. At this time, the lifting motor 641 lifts the two lifting arms 643 to the top through the lifting longitudinal track group 642, and then uses air pressure or hydraulic pressure to move the two lifting arms 643 close to each other on the lifting transverse track 644, and at the same time makes the lifting member 6431 abut against the wafer storage member 12. At this time, the motor 6432 can be used to allow the lifting member 6431 to lift the wafer storage member 12 upward, and then the transport longitudinal motor 651 is used to lift the transport arm 653 to the correct position through the transport longitudinal track group 652, and then the transport motor 654 drives the support arm 6531 to take out or place the wafer. Thus, by using a supporting platform 63 arranged in the longitudinal direction and in combination with a rotating mechanism 61, a lifting mechanism 64, and a transporting mechanism 65, a plurality of wafer storage devices 1 can be stored in the same space without affecting the workflow, thereby achieving a vertical storage device 6 that can accommodate more wafer storage devices 1 than those generally available on the market in a minimum volume space.

[0107] When the wafers are stored in the wafer storage device 1 , the gas supply system 3 can provide clean gas to the wafer storage device 1 to prevent the wafers from being contaminated by particles adhering to them.

[0108] The above description is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. Therefore, all simple modifications and equivalent structural changes made by using the contents of the specification and drawings of the present invention should be included in the patent scope of the present invention.

Claims

1. A gas flow control device, characterized in that: include: a wafer storage device; A gas input device is provided on one side of the wafer storage device, the gas input device is connected to a gas supply system, and the gas input device includes: a gas inlet element having an input channel and a gas pressure-maintaining channel connected to the input channel; a first flow balancing member provided at the gas inlet element at the side of the gas pressure maintaining channel and having a plurality of first flow balancing through holes, and communicating with the gas pressure maintaining channel to evenly disperse the clean gas from the gas pressure maintaining channel to form a first uniform gas; A gas diffusion flow equalizing member provided at the side of the first flow equalizing member away from the gas pressure maintaining channel and having a plurality of gas diffusion flow equalizing through holes, wherein the gas diffusion flow equalizing member has a diffusion channel, and the volume of the gas diffusion flow equalizing member is larger than that of the first flow equalizing member, so as to diffuse the first uniform gas over a large area to form a diffused uniform gas; and A second flow balancing member is provided at the side of the gas diffusion flow balancing member away from the first flow balancing member and has a plurality of second flow balancing through holes, so as to evenly disperse the diffused uniform gas again to form a second uniform gas.

2. The gas flow control device according to claim 1, characterized in that: Each of the second flow-balancing holes has a plurality of first air outlets facing a first direction, a plurality of second air outlets facing a second direction, and a plurality of third air outlets facing a third direction, and the first direction, the second direction, and the third direction are all oriented in different directions.

3. The gas flow control device according to claim 2, characterized in that: The gas diffusion flow equalizing member is provided with a plurality of flow guide members at the side away from the first flow equalizing member, so as to guide the second uniform gas from the first gas outlet and the third gas outlet.

4. The gas flow control device according to claim 1, characterized in that: A flow control component is arranged at one side of the gas inlet element to adjust the gas flow input into the wafer storage device.

5. The gas flow control device according to claim 4, characterized in that: The wafer storage device is provided with at least one sensor which is in communication with the flow control component to sense the environmental state in the wafer storage device and provide environmental information to the flow control component so that the gas flow can be adjusted by the flow control component.

6. The gas flow control device according to claim 5, characterized in that: The sensor is one of an oxygen concentration sensor or a temperature and humidity sensor.

7. The gas flow control device according to claim 1, characterized in that: The gas inlet element has a receiving portion for accommodating the first flow equalizing element.

8. The gas flow control device according to claim 1, characterized in that: A first limiting fixing part which can be combined with the wafer storage device is provided at the upper part of one side of the gas diffusion and flow equalizing part, so that the gas diffusion and flow equalizing part can be combined with the one side of the wafer storage device by means of the first limiting fixing part. A second limiting fixing part which can be combined with the wafer storage device and the gas diffusion and flow equalizing part is provided at the lower part of one side of the gas diffusion and flow equalizing part, so that the gas diffusion and flow equalizing part can be combined with the one side of the wafer storage device by means of the fixed limiting of the second limiting fixing part.

9. The gas flow control device according to claim 1, characterized in that: The gas diffusion flow equalizing element has a plurality of gas diffusion flow equalizing channels in communication with the gas diffusion flow equalizing through holes, and the positions of the second flow equalizing through holes correspond to the gas diffusion flow equalizing channels.

10. The gas flow control device according to claim 1, characterized in that: The wafer storage device is arranged in a vertical storage device, which has a rotating mechanism. A vertical frame is provided on the rotating mechanism, and a plurality of supporting platforms arranged in the longitudinal direction are provided on the vertical frame for supporting the wafer storage device. A lifting mechanism capable of lifting the wafer storage parts stored in the wafer storage device is provided on one side of the rotating mechanism, and a transport mechanism capable of storing and accessing the wafers in the wafer storage device is provided on one side of the rotating mechanism.

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