Sputtering plane target etching depth measuring device

Abstract

The utility model discloses a sputtering plane target etching depth measuring device, which is characterized in that a vacuum pump is fixedly mounted on the left side surface of a vacuum chamber, a first mounting opening is formed in the lower end surface of the vacuum chamber, a sealing gasket is slidably connected in the first mounting opening, and a working plate is fixedly connected to the inner ring of the sealing gasket; a limiting groove is formed in the center of the upper end face of the working plate, an elastic plate is fixedly connected in the limiting groove, a target material body abuts against the interior of the elastic plate, a high-voltage electric appliance is fixedly installed in the center of the upper end face of the vacuum chamber, and the output end of the high-voltage electric appliance extends into the vacuum chamber. When the target material body is downwards placed in the limiting groove, the target material body is clamped and positioned through the elastic plate, so that the target material body is more stable during installation, meanwhile, when the telescopic air cylinder controls the working plate to abut against the vacuum chamber, internal gas is sucked under the action of the vacuum pump, and the environment that the target material body is electrically shocked is met.

Description

Technical Field

[0001] The utility model relates to the field of sputtering plane targets, in particular to a device for measuring the etching depth of sputtering plane targets. Background Art

[0002] Patent No. CN205940475U discloses a magnetron sputtering planar target etching depth measuring device. The utility model has a reasonable structural design. The device can accurately measure the service life of the remaining target material, guide the process optimization direction, improve the utilization rate of the target material, reduce production costs, and enhance the product's competitive advantage in the market.

[0003] However, the above-mentioned existing magnetron sputtering planar target etching depth measuring device has no positioning and clamping function when processing the target body, and a certain force is generated during laser sputtering, which is prone to deviation.

[0004] In order to solve the above problems, the utility model provides a device for measuring the etching depth of a sputtering planar target. Utility Model Content

[0005] In view of the deficiencies in the prior art, the utility model provides a sputtering planar target etching depth measuring device to solve the technical problem in the prior art that "the device has no positioning and clamping function when processing the target material body, and a certain force is generated during laser sputtering, which is prone to deviation."

[0006] To achieve the above objectives, the utility model is implemented through the following technical solutions: a device for measuring the etching depth of a sputtering plane target, comprising a vacuum chamber, a vacuum pump is fixedly installed on the left side of the vacuum chamber, a first installation port is provided on the lower end face of the vacuum chamber, a sealing gasket is slidably connected in the first installation port, a working plate is fixedly connected to the inner ring of the sealing gasket, a limiting groove is provided at the center of the upper end face of the working plate, an elastic plate is fixedly connected in the limiting groove, a target material body is abutted in the elastic plate, a high-voltage electrical appliance is fixedly installed at the center of the upper end face of the vacuum chamber, the output end of the high-voltage electrical appliance extends in the vacuum chamber, an etching depth meter is fixedly installed on the right side face of the vacuum chamber, a controller is fixedly installed on the right side face of the vacuum chamber, and a display screen is fixedly installed on the right side face of the vacuum chamber.

[0007] As a preferred technical solution of the utility model, telescopic cylinders are symmetrically fixedly connected to both sides of the upper end surface of the working plate, and one end of the telescopic cylinder away from the working plate is fixedly connected in the vacuum chamber.

[0008] As a preferred technical solution of the utility model, a second mounting opening is opened on the front side of the vacuum chamber, and an observation window is fixedly connected in the second mounting opening.

[0009] As a preferred technical solution of the present utility model, the controller is electrically connected to the high voltage device, and the etching depth measuring device is electrically connected to the display screen.

[0010] As a preferred technical solution of the utility model, the suction end of the vacuum pump penetrates through and is connected to the side wall of the vacuum chamber.

[0011] As a preferred technical solution of the utility model, the lower end surface of the vacuum chamber is fixedly connected with a support foot, the bottom end of the support foot is fixedly connected with an anti-slip pad, and the bottom end of the support foot is fixedly connected to the center of the upper end surface of the anti-slip pad.

[0012] The utility model provides a device for measuring the etching depth of a sputtering plane target, which has the following features:

[0013] Beneficial effects:

[0014] 1. When the target body is placed downward in the limit groove, the elastic plate is used to clamp and position the target body, making the target body more stable during installation. At the same time, when the telescopic cylinder controls the working plate to be inserted into the vacuum chamber, the internal gas is sucked under the action of the vacuum pump to meet the environment where the target body is electrocuted.

[0015] 2. When the target body is inserted into the etching depth measuring device, the display screen will show the measured data of the target body etching depth in real time. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a three-dimensional structural schematic diagram of a sputtering plane target etching depth measurement device proposed by the utility model;

[0017] Figure 2 This is a schematic diagram of the structure of the target body of a sputtering plane target etching depth measurement device proposed by the utility model;

[0018] Figure 3 The utility model provides a schematic structural diagram of a limit groove of a device for measuring the etching depth of a sputtering plane target.

[0019] In the figure: 1 vacuum chamber, 2 etching depth measuring device, 3 supporting feet, 4 anti-skid pads, 5 high voltage electrical appliances, 7 observation window, 8 vacuum pump, 9 working plate, 10 sealing pad, 11 limiting groove, 12 elastic plate, 13 telescopic cylinder, 14 target body, 15 controller, 16 display screen. DETAILED DESCRIPTION

[0020] The following is a further detailed description of the implementation of the present invention in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but cannot be used to limit the scope of the present invention.

[0021] refer to Figure 1-3The utility model provides a technical solution: a device for measuring the etching depth of a sputtering plane target, comprising a vacuum chamber 1, a vacuum pump 8 is fixedly installed on the left side of the vacuum chamber 1, and the gas in the vacuum chamber 1 is sucked by the vacuum pump 8, a first mounting port is provided on the lower end surface of the vacuum chamber 1, and a sealing gasket 10 is slidably connected in the first mounting port, and by setting the first mounting port and the sealing gasket 10, the working plate 9 can be moved up and down while improving the internal sealing, the inner ring of the sealing gasket 10 is fixedly connected to the working plate 9, and a limiting groove 11 is provided at the center of the upper end surface of the working plate 9, and a sealing gasket 10 is fixedly connected in the limiting groove 11 There is an elastic plate 12. By setting a limiting groove 11 and the elastic plate 12, when the target body 14 is inserted into the limiting groove 11, the elastic plate 12 limits the target body 14. The target body 14 is abutted against the elastic plate 12. A high-voltage electrical appliance 5 is fixedly installed at the center of the upper end surface of the vacuum chamber 1. The gas is ionized into plasma through the high-voltage electrical appliance 5. The output end of the high-voltage electrical appliance 5 extends in the vacuum chamber 1. An etching depth meter 2 is fixedly installed on the right side of the vacuum chamber 1. A controller 15 is fixedly installed on the right side of the vacuum chamber 1. By setting the controller 15, the high-voltage electrical appliance 5 can be controlled.

[0022] Among them, telescopic cylinders 13 are symmetrically fixedly connected on both sides of the upper end surface of the working plate 9. By setting the telescopic cylinder 13, it is convenient to control the up and down movement of the working plate 9. At the same time, the model is set to SC160-S, and the end of the telescopic cylinder 13 away from the working plate 9 is fixedly connected in the vacuum chamber 1.

[0023] A second installation opening is provided on the front side of the vacuum chamber 1, and an observation window 7 is fixedly connected to the second installation opening.

[0024] The controller 15 is electrically connected to the high voltage device, and the etching depth measuring device 2 is electrically connected to the controller 15 .

[0025] The suction end of the vacuum pump 8 penetrates through the side wall of the vacuum chamber 1 and is in communication with the side wall of the vacuum chamber 1 .

[0026] Among them, the lower end surface of the vacuum chamber 1 is fixedly connected with a supporting foot 3, and the device is supported by setting the supporting foot 3. The bottom end of the supporting foot 3 is fixedly connected with an anti-slip pad 4, and the bottom end of the supporting foot 3 is fixedly connected to the center of the upper end surface of the anti-slip pad 4.

[0027] The working principle of the utility model is as follows: when in use, the staff first places the target body 14 on the working plate 9, limits the target body 14 by the elastic plate 12, and starts the telescopic cylinder 13 at the same time to control the working plate 9 to move upward, and moves the target body 14 into the vacuum chamber 1, so that the sealing gasket 10 fits with the first installation port. At this time, the vacuum pump 8 is started to suck the gas in the vacuum chamber 1 out of the vacuum chamber 1. At this time, the target body 14 is in a vacuum chamber 1 containing rarefied gas. At this time, high voltage electricity is applied, and the gas is ionized into The gas ions in the plasma are accelerated by the electric field and collide with the target body 14. The impact of these high-energy ions causes the atoms or molecules on the surface of the target body 14 to be sputtered out. Subsequently, these sputtered particles fly toward the substrate along a straight trajectory and form a thin film on the substrate. When the processing of the target body 14 is completed, the telescopic cylinder 13 controls the working plate 9 to move downward, transfers the target body 14 out of the vacuum chamber 1, and pushes the target body 14 on the sputtering side into the etching depth meter 2 for measurement, which is then checked through the controller 15.

[0028] The above is only a preferred specific implementation of the utility model, but the protection scope of the utility model is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical solution and utility model concept of the utility model within the technical scope disclosed by the utility model, which should be included in the protection scope of the utility model. For those skilled in the art, it is obvious that the utility model is not limited to the details of the above exemplary embodiments, and the utility model can be implemented in other specific forms without departing from the spirit or basic features of the utility model.

Claims

1. A device for measuring the etching depth of a sputtering planar target, comprising a vacuum chamber (1), characterized in that: A vacuum pump (8) is fixedly installed on the left side of the vacuum chamber (1); a first installation opening is provided on the lower end surface of the vacuum chamber (1); a sealing gasket (10) is slidably connected in the first installation opening; a working plate (9) is fixedly connected to the inner ring of the sealing gasket (10); a limiting groove (11) is provided at the center of the upper end surface of the working plate (9); an elastic plate (12) is fixedly connected in the limiting groove (11); a target body (14) is abutted in the elastic plate (12); a high-voltage electrical appliance (5) is fixedly installed at the center of the upper end surface of the vacuum chamber (1); an output end of the high-voltage electrical appliance (5) extends into the vacuum chamber (1); an etching depth measuring device (2) is fixedly installed on the right side surface of the vacuum chamber (1); a controller (15) is fixedly installed on the right side surface of the vacuum chamber (1); and a display screen (16) is fixedly installed on the right side surface of the vacuum chamber (1).

2. The device for measuring the etching depth of a sputtering planar target according to claim 1, characterized in that: Telescopic cylinders (13) are fixedly connected to the upper end surface of the working plate (9) on both sides symmetrically, and one end of the telescopic cylinder (13) facing away from the working plate (9) is fixedly connected in the vacuum chamber (1).

3. The device for measuring the etching depth of a sputtering planar target according to claim 1, characterized in that: A second mounting opening is provided on the front side of the vacuum chamber (1), and an observation window (7) is fixedly connected to the inside of the second mounting opening.

4. The device for measuring the etching depth of a sputtering planar target according to claim 1, characterized in that: The controller (15) is electrically connected to the high voltage device, and the etching depth measuring device (2) is electrically connected to the display screen (16).

5. The device for measuring the etching depth of a sputtering planar target according to claim 1, characterized in that: The suction end of the vacuum pump (8) penetrates through and is in communication with the side wall of the vacuum chamber (1).

6. The device for measuring the etching depth of a sputtering planar target according to claim 1, characterized in that: The lower end surface of the vacuum chamber (1) is fixedly connected to a support foot (3), the bottom end of the support foot (3) is fixedly connected to an anti-skid pad (4), and the bottom end of the support foot (3) is fixedly connected to the center of the upper end surface of the anti-skid pad (4).

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