UV light source module and UV curing oven

Abstract

The utility model relates to a UV light source module and a UV curing oven, and the UV light source module comprises a transmission channel which is internally provided with a transmission assembly which is used for bearing and transmitting a silicon wafer; the lamp box assembly is arranged above the conveying channel, the lamp box assembly comprises a light source and a light source cooling assembly arranged above the light source, and the light source cooling assembly can reduce the temperature of the light source; and the heating assembly is arranged below the conveying channel corresponding to the lamp box assembly, and the heating assembly can heat the silicon wafers on the conveying channel. According to the UV light source module and the UV curing oven provided by the utility model, stable gas is introduced into the UV light source module to eliminate electric ions between a light source assembly and a silicon wafer, so that the formation of electric arcs is prevented.

Description

Technical Field

[0001] The utility model relates to the technical field of new energy, in particular to a UV light source module and a UV curing furnace. Background Art

[0002] UV oven, also known as UV curing oven, UV, which is the abbreviation of ultraviolet rays, is used in the production and manufacturing of solar cells. UV curing oven can improve the photoelectric conversion efficiency of silicon wafers.

[0003] In the existing UV furnace technology, when a UV light source module is set to irradiate light to the silicon wafer, the light source component in the UV light source module is often accompanied by high voltage characteristics when working normally, so a necessary safety distance must be maintained between the silicon wafer and the light source component. A distance that is too low often causes high voltage to ionize the air between the light source and the silicon wafer, thereby generating an arc and damaging the silicon wafer. A distance that is too high will cause the surface of the silicon wafer to be unable to form a good passivation coating under light radiation, thereby further increasing the power of the light source to meet the processing requirements, resulting in unnecessary energy waste. Utility Model Content

[0004] To this end, the technical problem to be solved by the utility model is to overcome the problem in the prior art that ions are easily generated to form arcs when the distance between the light source component and the silicon wafer is too close, and to provide a UV light source module and a UV curing furnace. A cooling component is arranged in the UV light source module, which can reduce the temperature of the light source and eliminate the ions generated by high temperature between the light source component and the silicon wafer, thereby preventing the formation of arcs.

[0005] In order to solve the above technical problems, the utility model provides a UV light source module, comprising:

[0006] A conveying channel, in which a conveying component is arranged, and the conveying component is used to carry and transport silicon wafers;

[0007] A light box assembly is arranged above the conveying passage, the light box assembly comprises a light source and a cooling assembly arranged above the light source, the cooling assembly can reduce the temperature of the light source;

[0008] A heating component is arranged below the conveying channel corresponding to the light box component, and the heating component can heat the silicon wafer on the conveying channel.

[0009] In one embodiment of the present invention, the conveying component is a conveyor belt, and the silicon wafer is placed flat on the conveyor belt.

[0010] In one embodiment of the present invention, the light source includes a plurality of lamp tubes, each of which is extended along the width direction of the transmission channel, and the plurality of lamp tubes are evenly spaced along the length direction of the transmission channel.

[0011] In one embodiment of the utility model, the light source emits ultraviolet light in a wavelength range of 100-200 or 315-400 nm, and the light source is specifically one of an LED, an ultraviolet lamp and a low-pressure mercury lamp.

[0012] In one embodiment of the utility model, the light source cooling assembly is a gas cooling device, comprising: a gas source, the gas source passes gas into the transmission channel, the gas contacts the silicon wafer after passing through the light source;

[0013] The air source includes a plurality of air pipes, each of which is extended along the width direction of the transmission channel, and the plurality of air pipes are evenly spaced along the length direction of the transmission channel, and an air inlet is provided at both ends of each of the air pipes, and a plurality of exhaust holes are opened on each of the air pipes in the direction toward the transmission channel;

[0014] The gas is one of nitrogen, oxygen or compressed air;

[0015] The heating assembly comprises a heating plate and a vacuum chamber arranged below the heating plate. The heating plate has mesh holes. After the gas passes through the silicon wafer, it is discharged into the vacuum chamber.

[0016] In one embodiment of the present invention, a vacuum hole is provided on the side wall of the vacuum chamber, and the vacuum chamber is connected to a vacuum pumping device through the vacuum hole.

[0017] In one embodiment of the present invention, the light source cooling assembly is a water cooling device, comprising: a water cooling plate, in which a water tank is provided, and a sealing plate for the water tank is provided on the water cooling plate.

[0018] In one embodiment of the utility model, the light box assembly also includes a fixed table, a mounting frame is provided on a side of the fixed table facing the conveying channel, the light source and the gas source are both provided on the mounting frame, the distance between the fixed table and the conveying channel is adjusted, and the distance between the light source and the silicon wafer on the conveying channel is set to 2 to 6 mm.

[0019] In one embodiment of the present invention, a heating rod or a heating wire is provided on the heating plate, and the heating temperature of the heating plate is greater than 100°C.

[0020] In order to solve the above technical problems, the utility model also provides a UV curing furnace, including the UV light source module, and also including: a preheating component, a cooling component and a waste discharge component, wherein the preheating component and the cooling component are respectively arranged on both sides of the UV light source module, and the transmission component in the UV light source module extends to both sides and penetrates into the preheating component and the cooling component respectively, wherein:

[0021] The preheating assembly comprises an upper preheating module and a lower preheating module, which are buckled together to form a preheating cavity, the conveying assembly passes through the preheating cavity, and an inert gas is introduced into the preheating cavity;

[0022] The waste discharge component is arranged at the front end or above the preheating component, the waste discharge component is communicated with the preheating component, and the waste discharge component discharges the inert gas introduced into the preheating cavity.

[0023] The above technical scheme of the utility model has the following advantages over the prior art: the UV light source module described in the utility model is not only provided with the light source required for curing in the light box assembly, but also provided with a light source cooling assembly. The light source cooling assembly can reduce the temperature of the light source when in use, and can eliminate the ions generated by high temperature between the light source assembly and the silicon wafer, thereby preventing the formation of an arc, ensuring that a good passivation coating is formed on the surface of the silicon wafer under light radiation, while minimizing the distance between the light source assembly and the silicon wafer, thereby achieving the purpose of reducing the power of the light source and reducing energy waste. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to make the content of the utility model easier to understand, the utility model is further described in detail according to the specific embodiments of the utility model in combination with the accompanying drawings, wherein:

[0025] Figure 1 This is a schematic diagram of the overall structure of the UV light source module embodiment 1 of the present utility model;

[0026] Figure 2 This is a side structural diagram of the UV light source module embodiment 1 of the present utility model;

[0027] Figure 3 It is a structural schematic diagram of a light box assembly of Embodiment 1 of the present utility model;

[0028] Figure 4 It is a structural schematic diagram of the heating component of the utility model;

[0029] Figure 5 This is a schematic diagram of the overall structure of the UV light source module embodiment 2 of the present utility model;

[0030] Figure 6It is a structural schematic diagram of the UV curing furnace of the utility model.

[0031] Explanation of the reference numerals in the specification: 1. Conveying channel; 2. Light box assembly; 21. Light source; 22. Air source; 221. Air inlet; 222. Exhaust hole; 23. Fixed table; 24. Mounting frame; 25. Water cooling plate; 26. Water tank sealing plate; 3. Heating assembly; 31. Heating plate; 311. Mesh; 32. Vacuum chamber; 4. Conveying assembly; 5. Preheating assembly; 6. Cooling assembly. DETAILED DESCRIPTION

[0032] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.

[0033] Example 1

[0034] Reference Figure 1 and Figure 2 As shown, the utility model discloses a UV light source module, including: a transmission channel 1, a light box component 2 and a heating component 3, wherein: a transmission component is arranged in the transmission channel 1, the transmission component is used to carry and transmit silicon wafers, the light box component 2 and the heating component 3 are arranged on the upper and lower sides of the transmission channel 1 respectively, the light box component 2 is arranged to irradiate the silicon wafer only on one side of the silicon wafer to form a protective mold, and the heating component 3 is arranged to heat the silicon wafer on the other side of the silicon wafer so that the silicon wafer reaches the temperature required to form the protective mold, the light box component 2 includes a light source 21 and a heating component 3 arranged in the transmission channel 1. The light source cooling component above the light source 21, the light source 1 emits UV light, and a certain amount of heat is generated when the light source 1 emits light. When the temperature is too high, ions are generated between the light source and the silicon wafer, thereby forming an arc. Therefore, in this embodiment, the light source cooling component is set to reduce the temperature of the light source when it is in use, and can eliminate the ions between the light source 21 and the silicon wafer, thereby preventing the formation of an arc, ensuring that a good silicide coating is formed on the surface of the silicon wafer under light radiation, while minimizing the distance between the light source 21 component and the silicon wafer, thereby achieving the purpose of reducing the power of the light source 21 and reducing energy waste.

[0035] Specifically, the conveying component in the conveying channel 1 is set as a conveyor belt, and the silicon wafer is spread flat on the conveyor belt to ensure that the entire plane of the silicon wafer falls on the conveyor belt, thereby ensuring that the silicon wafer will not warp or deform during transportation. At the same time, the front side of the silicon wafer is irradiated by the light source 21 in the UV light source module to form a protective mold, and the back side of the silicon wafer is not irradiated by the light source 21 to prevent oxidation of the back side.

[0036] In this embodiment, the light source cooling assembly is set as a gas cooling device, referring to Figure 2 and Figure 3 As shown, the gas cooling device includes: a gas source 22, the gas source 22 introduces gas into the direction of the transmission channel, the gas contacts the silicon wafer after passing through the light source 21, and the gas can have a cooling effect, the heating component 3 includes a heating plate 31 and a vacuum chamber 32 arranged below the heating plate 31, the heating plate 31 has a mesh 311, and the gas is discharged into the vacuum chamber 32 after passing through the silicon wafer.

[0037] Specifically, the air source 22 is provided to include a plurality of air pipes, each of which is extended along the width direction of the transmission channel 1, and the plurality of air pipes are evenly spaced along the length direction of the transmission channel 1, and an air inlet 221 is provided at both ends of each of the air pipes, and a plurality of exhaust holes 222 are opened on each of the air pipes in the direction toward the transmission channel 1.

[0038] Specifically, the gas is one of nitrogen, oxygen or compressed air. The gas is introduced through the air inlet 221 set at both ends of the air pipe, and then discharged from a number of exhaust holes 222. After passing through the light source 21, it contacts the silicon wafer. By introducing stable gas, the temperature of the light source can be reduced and the formation of electric arc can be prevented. Therefore, after the stable gas is introduced, the distance between the light source 21 and the silicon wafer can be reduced as much as possible. In this embodiment, the minimum distance between the light source 21 and the silicon wafer on the transmission channel 1 can be as small as 2mm. Compared with the technical solution in the prior art that the distance between the light source 21 and the silicon wafer is greater than 10mm in order to avoid the formation of electric arc, since the light source 21 is set closer, the power of the light source 21 can be reduced. While also ensuring the formation of a good passivation coating, energy waste is reduced. Reference Figure 3 As shown, in this embodiment, the light box assembly 2 also includes a fixed table 23, and a mounting frame 24 is arranged on the side of the fixed table 23 facing the conveying channel 1, and the light source 21 and the gas source 22 are both arranged on the mounting frame 24, wherein: the fixed table 23 can be raised and lowered above the conveying channel 1, and the distance between the fixed table 23 and the conveying channel 1 is adjusted to control the distance between the light source 21 and the silicon wafer on the conveying channel 1 to be 2 to 6 mm.

[0039] Specifically, the light source 21 includes a plurality of lamp tubes, each of which is extended along the width direction of the transmission channel 1 , and both ends of the lamp tube are fixed on the mounting frame 24 , and the plurality of lamp tubes are evenly spaced along the length direction of the transmission channel 1 .

[0040] Specifically, the light source 21 emits ultraviolet light with a wavelength between 100 and 200 or 315 and 400 nm. The light source 21 is specifically one of an LED, an ultraviolet lamp and a low-pressure mercury lamp. Ultraviolet light sources 21 of different wavelengths are used to irradiate the silicon wafer so that the surface of the silicon wafer reacts with ozone in the environment to form a protective layer on the surface of the silicon wafer. This product is suitable for use in the manufacturing process of solar cells and can be used in certain processes such as cleaning, texturing, and screen manufacturing. Different forms of light sources 21 can be selected according to different usage scenarios.

[0041] Experiments have shown that selecting ultraviolet light that is not in the above-mentioned band at a temperature of 160-200°C can easily cause a poor passivation layer to form on the surface of the silicon wafer, for example: incomplete passivation of the corners of the silicon wafer, uneven passivation, the passivation layer is too thin to play its due role, etc.

[0042] Reference Figure 4 As shown, the heating plate 31 is provided with heating rods or heating wires, and mesh holes 311 for gas to pass through can be formed between adjacent heating rods or heating wires, so that the gas can pass through the heating plate 31 into the vacuum chamber 32 .

[0043] Specifically, during actual processing, the heating temperature of the heating plate 31 is set to be greater than 100° C., and a temperature control system is used to control the heating temperature in real time. The heating temperature has a crucial influence on whether a good protective film is formed on the surface of the silicon wafer.

[0044] Specifically, an exhaust hole is opened on the side wall of the vacuum chamber 32, and the vacuum chamber 32 is connected to the vacuum equipment through the exhaust hole. The gas in the vacuum chamber 32 is always extracted by the vacuum equipment, so that the vacuum chamber 32 forms a negative pressure, which can always adsorb the silicon wafer. During the transmission process, the silicon wafer is ensured to fit tightly with the transmission channel 1, preventing the silicon wafer from warping and preventing the back side of the silicon wafer from being oxidized.

[0045] Example 2

[0046] Based on the above embodiment 1, Figure 5 As shown, the transmission component of the present application can also be set as a steel belt. Since the steel belt is continuous, if the light source cooling component is set as a gas cooling device, it is difficult to form gas flow directly through the steel belt. Therefore, the present application also provides a light source cooling component, that is, the light source cooling component is set as a water cooling device, including: a water cooling plate, a water trough is opened in the water cooling plate, a water trough sealing plate is arranged on the water cooling plate, a water inlet and a drain are opened on the water trough, and it is connected to an external water cooling box through the water inlet and the drain, so that cooling water can be introduced into the water trough, thereby cooling the light source.

[0047] Example 3

[0048] Based on the above embodiment 1, this embodiment further discloses a UV curing oven, referring to Figure 6 As shown, the UV curing furnace includes the above-mentioned UV light source module, and also includes: a preheating component 5, a cooling component 6 and a waste discharge component, the preheating component 5 and the cooling component 6 are respectively arranged on both sides of the UV light source module, and the transmission component 4 in the UV light source module extends to both sides and penetrates into the preheating component 5 and the cooling component 6 respectively, wherein:

[0049] The preheating component 5 includes an upper preheating module and a lower preheating module, which are buckled together to form a preheating cavity, and the conveying component 4 passes through the preheating cavity. The purpose of setting the preheating component 5 is to improve the efficiency of preheating silicon wafers to excite hydrogen atoms; the upper preheating module and the lower preheating module each include a plurality of heating rods, and the electric energy of the heating rods is provided by a power supply outside the UV furnace. The temperature of each heating rod is controlled individually, so that the preheating component 5 is progressively increased to a preheating temperature of 50°C. The preheating component 5 can be increased to a preheating temperature of 60°C-70°C according to different silicon wafers.

[0050] Furthermore, an inert gas, usually nitrogen, is introduced into the preheating chamber to prevent the silicon wafer from forming inferior silicon oxide in advance.

[0051] The cooling assembly 6 is disposed above the conveying assembly 4 . The cooling assembly 6 includes a plurality of blowers. The cooling assembly 6 blows air to cool the silicon wafer after being cured by the UV light source module.

[0052] Specifically, a certain space is reserved between the cooling assembly 6 and the UV light source module to facilitate the real-time installation and disassembly of the UV light source module.

[0053] The waste discharge component is connected to the preheating component 5, and the waste discharge component discharges the inert gas introduced into the preheating chamber. The waste discharge component is provided with multiple waste gas hoods, and the waste gas hoods are provided with multiple waste discharge ports. The multiple waste gas hoods are respectively sleeved on the front end or the top of the preheating component 5. The function of the waste gas hood is to prevent the escape of organic waste gas generated during the vapor phase chemical deposition of silicon wafers, and the waste discharge port is used to connect a waste discharge hose to centrally discharge the organic waste gas.

[0054] Obviously, the above embodiments are merely examples for the purpose of clear explanation and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention of the utility model.

Claims

1. A UV light source module, characterized in that: include: A conveying channel, in which a conveying component is arranged, and the conveying component is used to carry and transport silicon wafers; A light box assembly is arranged above the transmission channel, the light box assembly comprises a light source and a light source cooling assembly arranged above the light source, the light source cooling assembly can reduce the temperature of the light source; A heating component is arranged below the conveying channel corresponding to the light box component, and the heating component can heat the silicon wafers on the conveying channel.

2. The UV light source module according to claim 1, characterized in that: The conveying component is a conveyor belt, and the silicon wafer is placed flat on the conveyor belt.

3. The UV light source module according to claim 1, characterized in that: The light source includes a plurality of lamp tubes, each of which is extended along the width direction of the transmission channel, and a plurality of the lamp tubes are distributed at equal intervals along the length direction of the transmission channel.

4. The UV light source module according to claim 1, characterized in that: The light source emits ultraviolet light in a wavelength range of 100-200 nm or 315-400 nm, and the light source is specifically one of an LED, an ultraviolet lamp and a low-pressure mercury lamp.

5. The UV light source module according to claim 1, characterized in that: The light source cooling assembly is a gas cooling device, comprising: a gas source, the gas source introduces gas into the transmission channel, the gas contacts the silicon wafer after passing through the light source; The air source includes a plurality of air pipes, each of which is extended along the width direction of the transmission channel, and the plurality of air pipes are evenly spaced along the length direction of the transmission channel, and an air inlet is provided at both ends of each of the air pipes, and a plurality of exhaust holes are opened on each of the air pipes in the direction toward the transmission channel; The gas is one of nitrogen, oxygen or compressed air; The heating assembly comprises a heating plate and a vacuum chamber arranged below the heating plate. The heating plate has mesh holes. After the gas passes through the silicon wafer, it is discharged into the vacuum chamber.

6. The UV light source module according to claim 5, characterized in that: A vacuum hole is provided on the side wall of the vacuum chamber, and the vacuum chamber is connected with the vacuum pumping equipment through the vacuum hole.

7. The UV light source module according to claim 1, characterized in that: The light source cooling assembly is a water cooling device, comprising: a water cooling plate, a water tank is provided in the water cooling plate, and a plate covering the water tank is provided on the water cooling plate.

8. The UV light source module according to claim 1, characterized in that: The light box assembly also includes a fixed table, on the side of which a mounting frame is provided facing the conveying channel, the light source and the gas source are both provided on the mounting frame, the distance between the fixed table and the conveying channel is adjusted, and the distance between the light source and the silicon wafer on the conveying channel is set to 2 to 6 mm.

9. The UV light source module according to claim 5, characterized in that: The heating plate is provided with a heating rod or a heating wire, and the heating temperature of the heating plate is greater than 100°C.

10. A UV curing oven, characterized in that: The UV light source module comprises any one of claims 1 to 9, further comprising: a preheating component, a cooling component and a waste discharge component, wherein the preheating component and the cooling component are respectively arranged on both sides of the UV light source module, and the transmission component in the UV light source module extends to both sides and penetrates into the preheating component and the cooling component respectively, wherein: The preheating assembly comprises an upper preheating module and a lower preheating module, which are buckled together to form a preheating cavity, the conveying assembly passes through the preheating cavity, and an inert gas is introduced into the preheating cavity; The cooling assembly is arranged above the conveying assembly, and the cooling assembly includes a plurality of blowers, and the cooling assembly blows air to cool the silicon wafer after being cured by the UV light source module; The waste discharge component is arranged at the front end or above the preheating component, and the waste discharge component is communicated with the preheating component. The waste discharge component discharges the inert gas introduced into the preheating cavity.

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