Paster Mos tube

Abstract

The utility model provides an SMD Mos tube which comprises a shell, the shell comprises an upper cover plate and a substrate, and the upper cover plate and the substrate are connected in a bonding mode to form a cavity; the Mos tube also comprises a chip, the chip is located in the cavity, and the chip is used for realizing switching and amplification functions and ensuring reliable work and performance optimization of the Mos tube; the filter is connected with the chip in an attached mode and located between the upper cover plate and the chip, and the filter is used for effectively filtering power supply noise and radio frequency interference. The heat conduction structure further comprises a heat conduction plate, the heat conduction plate is connected with the chip in an attached mode, the heat conduction plate is located between the substrate and the chip, and the heat conduction plate is used for reducing noise generated by overheating. Through the above structure, the interference of noise on the SMD Mos tube is reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductors, and in particular to a chip MOS tube. Background Art

[0002] As a key component of surface mount devices (SMD), SMD MOS tubes (metal oxide semiconductor field effect transistors) are widely used in various electronic devices and circuits. Their main features include small size, light weight, easy integration and relatively low manufacturing cost. SMD MOS tubes play a key role in the field of modern electronics, especially in digital circuits, amplifier circuits, switching power supplies, etc., and their high performance and reliability are widely recognized.

[0003] In terms of noise reduction, the SMD MOS tube adopts a variety of technical solutions to improve the noise reduction performance. One of them is the use of differential input and common mode suppression technology to reduce the common mode interference of the input signal, thus performing better in the noise reduction direction.

[0004] However, differential input and common mode suppression technology have high matching requirements for circuit components. The parameters of the components are required to be stable and precise, which may lead to higher requirements for materials and processes during the manufacturing process, thus affecting the cost of the product. Therefore, a SMD MOS tube with a simple noise reduction structure is needed. Utility Model Content

[0005] In view of this, it is necessary to provide a SMD MOS tube that removes power supply interference to the SMD MOS tube through a filter at one end and reduces the noise generated by current fluctuations through heat dissipation at one end to solve the above problems.

[0006] The embodiment of the present application provides a patch MOS tube, comprising:

[0007] The housing comprises an upper cover plate and a base plate, wherein the upper cover plate is bonded to the base plate to form a cavity;

[0008] A chip, the chip is located in the cavity, and the chip is used to realize switching and amplification functions to ensure reliable operation and performance optimization of the MOS tube;

[0009] A filter, the filter is bonded to the chip and located between the upper cover plate and the chip, and the filter is used to effectively filter out power supply noise and radio frequency interference;

[0010] A heat conducting plate is bonded and connected to the chip and is located between the substrate and the chip. The heat conducting plate is used to reduce noise generated by overheating.

[0011] In at least one embodiment of the present application, the filter includes two fixed blocks and a plurality of connecting parts, the two fixed blocks are fit-connected to the filter and are located at two ends of the filter along the width, and the connection is fixedly connected to the fixed blocks and is located at one end of the filter close to the chip.

[0012] In at least one embodiment of the present application, the heat conducting plate includes a recessed portion, a convex portion and four placement blocks, the recessed portion and the convex portion are located at one end that is attached to the chip, the recessed portion is located between the convex portion and the placement block, the recessed portion is used to place the chip, one end of the placement block is connected to the heat conducting plate, and the other end is connected to the substrate, the four placement blocks are respectively located at the four corners of the heat conducting plate, and the placement blocks are used to fix the heat conducting plate to the substrate.

[0013] In at least one embodiment of the present application, the convex portion is provided with a hole corresponding to the connecting piece, the hole is used to cooperate with the connecting piece to fix the filter, and the concave portion and the convex portion are used to make the structure of the patch MOS tube more compact.

[0014] In at least one embodiment of the present application, the chip is made of low-resistance silicon to reduce the instability of the current, thereby reducing the noise generated by the current fluctuation.

[0015] In at least one embodiment of the present application, the chip further includes a pin connector and a pin, one end of the pin connector is fixedly connected to the chip, and the other end is fixedly connected to the pin, and the pin is located between the upper cover and the substrate.

[0016] In at least one embodiment of the present application, the upper cover plate is provided with a first symmetrical groove, the first symmetrical groove is located on a side that is bonded and connected to the base plate, and the first symmetrical groove is used to form a symmetrical ventilation duct of the shell.

[0017] In at least one embodiment of the present application, the base plate is provided with a second symmetrical groove, the second symmetrical groove is located on a side that is in contact with the upper cover plate, and the second symmetrical groove is used to form a symmetrical ventilation duct of the shell.

[0018] In at least one embodiment of the present application, when the base plate is fitted and connected to the upper cover plate, the first symmetrical groove and the second symmetrical groove form a symmetrical ventilation duct of the shell.

[0019] In at least one embodiment of the present application, the heat conducting plate is made of a high thermal conductivity material and is used to effectively conduct the heat generated by the chip to the substrate.

[0020] The above-mentioned SMD MOS tube removes power supply interference to the SMD MOS tube through a filter attached to one end of the chip, and the filter is directly attached to the chip to further remove noise; the heat conduction plate at the other end reduces the noise of the SMD MOS tube caused by current fluctuations caused by heat dissipation, and the ventilation channel on the shell further dissipates heat, thereby reducing the interference of noise on the SMD MOS tube. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A three-dimensional diagram of the patch MOS tube described in this application;

[0022] Figure 2 This is an exploded view of the SMD MOS tube described in this application;

[0023] Figure 3 The top view and cross-sectional view of the patch MOS tube described in this application;

[0024] Figure 4 This is a cross-sectional view of the patch MOS tube described in this application;

[0025] Figure 5 This is a structural connection diagram of the filter and chip described in this application;

[0026] Figure 6 This is a three-dimensional diagram of the filter described in this application.

[0027] Main component symbols

[0028] 100, SMD MOS tube; 10, shell; 11, upper cover; 111, first symmetrical groove; 12, substrate; 121, second symmetrical groove; 13, ventilation channel; 20, chip; 21, pin connector; 22, pin; 30, filter; 31, fixing block; 32, connector; 40, heat conducting plate; 41, recess; 42, protrusion; 421, hole; 43, placement block. DETAILED DESCRIPTION

[0029] The following will describe the embodiments of the present application in conjunction with the accompanying drawings in the embodiments of the present application. Obviously,

[0030] The described embodiments are only some embodiments of the present application, rather than all embodiments.

[0031] It should be noted that when a component is considered to be "connected" to another component, it may be directly connected to the other component or there may be a central component at the same time. When a component is considered to be "located on" another component, it may be directly located on the other component or there may be a central component at the same time. The terms "top", "bottom", "upper", "lower", "left", "right", "front", "back", and similar expressions used herein are for illustrative purposes only.

[0032] The embodiment of the present application provides a patch MOS tube, comprising:

[0033] The housing comprises an upper cover plate and a base plate, wherein the upper cover plate is bonded to the base plate to form a cavity;

[0034] A chip, the chip is located in the cavity, and the chip is used to realize switching and amplification functions to ensure reliable operation and performance optimization of the MOS tube;

[0035] A filter, the filter is bonded to the chip and located between the upper cover plate and the chip, and the filter is used to effectively filter out power supply noise and radio frequency interference;

[0036] A heat conducting plate is bonded and connected to the chip and is located between the substrate and the chip. The heat conducting plate is used to reduce noise generated by overheating.

[0037] The above-mentioned SMD MOS tube removes power supply interference to the SMD MOS tube through a filter attached to one end of the chip, and the filter is directly attached to the chip to further remove noise; the heat conduction plate at the other end reduces the noise of the SMD MOS tube caused by current fluctuations caused by heat dissipation, and the ventilation channel on the shell further dissipates heat, thereby reducing the interference of noise on the SMD MOS tube.

[0038] Some embodiments of the present application are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0039] See also Figure 1-Figure 6 The embodiment of the present application provides a SMD MOS tube 100, including a shell 10, the shell 10 includes an upper cover plate 11 and a substrate 12, the upper cover plate 11 is bonded to the substrate 12 to form a cavity; it also includes a chip 20, the chip 20 is located in the cavity, the chip 20 is used to realize the switching and amplification functions, and ensure the reliable operation and performance optimization of the MOS tube; it also includes a filter 30, the filter 30 is bonded to the chip 20 and is located between the upper cover plate 11 and the chip 20, the filter 30 is used to effectively filter out power supply noise and radio frequency interference; it further includes a heat conducting plate 40, the heat conducting plate 40 is bonded to the chip 20, and the heat conducting plate 40 is located between the substrate 12 and the chip 20, the heat conducting plate 40 is used to reduce the noise generated by overheating.

[0040] Specifically, the housing 10 includes an upper cover plate 11 and a base plate 12, which are bonded together to form a cavity. This design helps to effectively encapsulate the internal components in a compact housing, provide protection and isolate the external environment.

[0041] Furthermore, the chip 20 is located in the cavity and is used to realize the switching and amplifying functions to ensure the reliable operation and performance optimization of the MOS tube. The chip 20 is the core component of the MOS tube and ensures its normal operation by realizing the switching and amplifying functions.

[0042] Furthermore, the filter 30 is bonded to the chip 20 and is located between the upper cover 11 and the chip 20. The function of the filter 30 is to effectively filter out power supply noise and radio frequency interference, and improve the signal quality and stability of the MOS tube. At the same time, the heat conducting plate 40 is bonded to the chip 20 and is located between the substrate 12 and the chip 20. The function of the heat conducting plate 40 is to reduce the noise generated by overheating, and to maintain the MOS tube at a suitable working temperature by effectively conducting the heat generated by the chip 20 to the substrate 12.

[0043] Furthermore, the filter 30 includes two fixing blocks 31 and a plurality of connectors 32. The configuration of these components enables the filter 30 to be tightly connected, and the connector 32 is arranged close to one end of the chip 20 to more effectively filter interference. Meanwhile, the heat conducting plate 40 includes a concave portion 41, a convex portion 42 and four placement blocks 43. The design of these components helps to firmly connect the heat conducting plate 40 to the substrate 12 to ensure effective heat conduction.

[0044] In summary, the design of this SMD MOS tube 100 comprehensively utilizes components such as the housing 10, the chip 20, the filter 30 and the heat conducting plate 40. Through the synergistic effect of these components, the performance of the MOS tube is optimized, the anti-interference ability is improved, the noise caused by overheating is reduced, and the overall heat dissipation effect is improved through the design of the ventilation duct. This structure of the MOS tube is suitable for application scenarios with high performance and reliability requirements, such as communication equipment, amplifiers and other fields.

[0045] In a specific implementation example, the filter 30 includes two fixed blocks 31 and a plurality of connectors 32. The two fixed blocks 31 are fitted and connected to the filter 30 and are located at both ends of the filter 30 along the width. The connector is fixedly connected to the fixed blocks 31 and is located at one end of the filter 30 close to the chip 20.

[0046] Specifically, this design can make the filter 30 more firmly fixed on the MOS tube. The two fixing blocks 31 can ensure the lateral stability of the filter 30, and the multiple connectors 32 can further enhance the connection strength between the filter 30 and the chip 20. This design helps to prevent signal instability caused by power supply noise and radio frequency interference, thereby optimizing the performance of the MOS tube.

[0047] Furthermore, when the filter 30 is placed on the chip 20, the two fixing blocks 31 will fit on both ends of the chip 20 and be fixedly connected to the chip 20 through the connecting piece 32. This design ensures the stability of the filter 30 so that it will not shift or fall off during normal use.

[0048] Furthermore, this design can be widely used in fields that require high performance and high stability of the SMD MOS tube 100, such as communications, electronics, automotive electronics, etc. In these fields, power supply noise and radio frequency interference are common problems, and this design can effectively filter out these interferences to ensure the normal operation of the equipment.

[0049] In a specific implementation example, the heat conducting plate 40 includes a recess 41, a protrusion 42 and four placement blocks 43. The recess 41 and the protrusion 42 are located at one end that is attached to the chip 20. The recess 41 is located between the protrusion 42 and the placement block 43. The recess 41 is used to place the chip 20. One end of the placement block 43 is connected to the heat conducting plate 40 and the other end is connected to the substrate 12. The four placement blocks 43 are respectively located at the four corners of the heat conducting plate 40. The placement blocks 43 are used to fix the heat conducting plate 40 to the substrate 12.

[0050] Specifically, the concave portion 41 can be used to place the chip 20 to ensure that the chip 20 is correctly positioned in the heat conducting plate 40. The convex portion 42 can fit the chip 20 to conduct heat from the chip 20 to the heat conducting plate 40. The four placement blocks 43 can be used to fix the heat conducting plate 40 on the substrate 12 to enhance the heat conduction effect. This design can effectively conduct the heat generated by the chip 20 to the substrate 12, reduce the noise generated by overheating, and optimize the performance of the device.

[0051] Furthermore, when the chip 20 is placed on the concave portion 41, the convex portion 42 will fit with the chip 20 and transfer the heat to the heat conducting plate. Then, the four placement blocks 43 can fix the heat conducting plate 40 on the substrate 12 to ensure the heat conduction effect. This design can effectively transfer heat from the chip 20 to the substrate 12 and optimize the performance of the device.

[0052] In summary, this design can be widely used in fields that require high-performance and high-stability SMD MOS tubes 100, such as communications, electronics, automotive electronics, etc. In these fields, overheating is a common problem, and this design can effectively conduct the heat generated by the chip 20 to the substrate 12, reduce the noise caused by overheating, and optimize the performance of the device.

[0053] In a specific implementation example, the convex portion 42 is provided with a hole 421 corresponding to the connector 32, and the hole 421 is used to cooperate with the connector 32 to fix the filter 30, and the concave portion 41 and the convex portion 42 are used to make the structure of the SMD MOS tube 100 more compact.

[0054] Specifically, this design allows the connector 32 to be better fixed on the filter 30, thereby enhancing the stability of the filter 30. At the same time, due to the presence of the convex portion 42, the structure of the SMD MOS tube 100 can be made more compact, the volume can be reduced, and the compactness and stability of the overall structure can be improved.

[0055] Furthermore, when the filter 30 is placed on the chip 20, the connector 32 passes through the hole 421 on the filter 30 and is fixed on the substrate 12, thereby firmly fixing the filter 30 between the chip 20 and the substrate 12. At the same time, due to the presence of the convex portion 42, the upper cover plate 11 and the substrate 12 can fit together more closely, further enhancing the stability of the entire SMD MOS tube 100.

[0056] Furthermore, due to problems such as power supply noise and radio frequency interference, the signal needs to be filtered and optimized. This design can optimize the performance of the device by effectively fixing the filter 30 and enhancing the stability of the entire structure, making it more suitable for application in these fields.

[0057] In a specific implementation example, the chip 20 is made of low-resistance silicon to reduce the instability of the current, thereby reducing the noise generated by the current fluctuation.

[0058] Specifically, low-resistance silicon has excellent conductivity, which can reduce the instability of current and thus reduce the noise caused by current fluctuations. This helps to improve the performance and reliability of MOS tubes.

[0059] Furthermore, during the manufacturing process, the chip 20 is made of low-resistance silicon material, which can provide stable current transmission, thereby reducing noise caused by current fluctuations. During operation, the low-resistance silicon chip 20 can effectively control the stability of the current and ensure the accuracy and reliability of signal transmission.

[0060] Furthermore, this design can be widely used in fields that require high-performance and high-stability SMD MOS tubes 100, such as communications, electronics, automotive electronics, etc. In these fields, current fluctuations may generate noise and affect the transmission quality of signals. This design can reduce the instability of current and the noise generated by current fluctuations by using a chip 20 made of low-resistance silicon, thereby improving the accuracy and reliability of signal transmission, making it more suitable for application in these fields.

[0061] In a specific implementation example, the chip 20 further includes a pin connector 21 and a pin 22 , one end of the pin connector 21 is fixedly connected to the chip 20 , and the other end is fixedly connected to the pin 22 , and the pin 22 is located between the upper cover and the substrate 12 .

[0062] Specifically, the pin connector 21 is used to connect the chip 20 with the pin 22, so that the electrical signal generated by the chip 20 can be transmitted to the external circuit. The pin 22 is located between the upper cover 11 and the substrate 12, which is convenient for interface connection with the external circuit. This design makes it easier for the SMD MOS tube 100 to be used in various circuits, improving its practicality and flexibility.

[0063] Furthermore, during the manufacturing process, one end of the pin connector 21 is fixedly connected to the chip 20, and the other end is fixedly connected to the pin 22. In this way, when the SMD MOS tube 100 is installed in the circuit, the pin 22 can be connected to the interface of the external circuit, thereby realizing the transmission of electrical signals.

[0064] Furthermore, this design can be widely used in fields that require high-performance and high-stability SMD MOS tubes 100, such as communications, electronics, automotive electronics, etc. In these fields, in order to achieve more efficient and stable signal transmission, it is usually necessary to interface the MOS tube with an external circuit. This design can conveniently interface the SMD MOS tube 100 with an external circuit through the setting of the pin connector 21 and the pin 22, thereby improving the efficiency and stability of signal transmission, making it more suitable for application in these fields.

[0065] In a specific implementation example, the upper cover plate 11 is provided with a first symmetrical groove 111 , and the first symmetrical groove 111 is located on a side that is in contact with the base plate 12 , and the first symmetrical groove 111 is used to form a symmetrical ventilation duct of the shell 10 .

[0066] Specifically, the first symmetrical groove 111 is located on the side that is in contact with the substrate 12, and is used to form a symmetrical ventilation channel between the upper cover plate 11 and the substrate 12. Such a design is conducive to guiding and stabilizing the airflow, helping the heat generated by the chip 20 to dissipate through the ventilation channel, thereby reducing the risk of overheating. At the same time, the symmetrical ventilation channel can also improve the electrical performance and stability of the MOS tube.

[0067] Furthermore, during the manufacturing process, the first symmetrical groove 111 is engraved or cut on the upper cover plate 11, and then bonded to the substrate 12. When the MOS tube is working, hot air will rise from the chip 20 and be released through the ventilation channel formed by the first symmetrical groove 111, helping the chip 20 to maintain a lower operating temperature. At the same time, due to the design of the symmetrical ventilation channel, the transmission of electrical signals will also be more stable.

[0068] Furthermore, this design can be widely used in fields that require high-performance and high-stability SMD MOS tubes 100, such as communications, electronics, automotive electronics, etc. In these fields, overheating is one of the common problems, which may cause the performance of the MOS tube to degrade or be damaged. This design can form a symmetrical ventilation duct through the first symmetrical groove 111 of the upper cover plate 11, effectively guide and stabilize the airflow, and help the heat generated by the chip 20 to dissipate, thereby reducing the risk of overheating, improving the stability and reliability of the MOS tube, and making it more suitable for application in these fields.

[0069] In a specific implementation example, the base plate 12 is provided with a second symmetrical groove 121 , and the second symmetrical groove 121 is located on a side that is in close contact with the upper cover plate 11 , and the second symmetrical groove 121 is used to form a symmetrical ventilation duct of the shell 10 .

[0070] Specifically, the second symmetrical groove 121 is located on the side that is in contact with the upper cover plate 11, and is used to form a symmetrical ventilation channel between the substrate 12 and the upper cover plate 11. Such a design is conducive to guiding and stabilizing the airflow, helping the heat generated by the chip 20 to dissipate through the ventilation channel, thereby reducing the risk of overheating. At the same time, the symmetrical ventilation channel can also improve the electrical performance and stability of the MOS tube.

[0071] Furthermore, during the manufacturing process, the second symmetrical groove 121 is engraved or cut on the substrate 12, and then bonded to the upper cover 11. When the MOS tube is working, hot air will rise from the chip 20 and be released through the ventilation channel formed by the first symmetrical groove 111, helping the chip 20 to maintain a lower operating temperature. At the same time, due to the design of the symmetrical ventilation channel, the transmission of electrical signals will also be more stable.

[0072] Furthermore, this design can be widely used in fields that require high-performance and high-stability SMD MOS tubes 100, such as communications, electronics, automotive electronics, etc. In these fields, overheating is one of the common problems, which may cause the performance of the MOS tube to degrade or be damaged. This design can form a symmetrical ventilation channel through the second symmetrical groove 121 of the substrate 12, effectively guide and stabilize the airflow, and help the heat generated by the chip 20 to dissipate, thereby reducing the risk of overheating, improving the stability and reliability of the MOS tube, and making it more suitable for application in these fields.

[0073] In a specific implementation example, when the base plate 12 is fitted and connected to the upper cover plate 11 , the first symmetrical groove 111 and the second symmetrical groove 121 form a symmetrical air duct of the housing 10 .

[0074] Specifically, a symmetrical air duct is formed between the substrate 12 and the upper cover 11, which helps to guide and stabilize the airflow, and helps the heat generated by the chip 20 to dissipate through the air duct, thereby reducing the risk of overheating. At the same time, the symmetrical air duct can improve the electrical performance and stability of the MOS tube.

[0075] Furthermore, during the manufacturing process, the substrate 12 and the upper cover plate 11 are bonded and connected, so that the first symmetrical groove 111 and the second symmetrical groove 121 form a symmetrical air duct between the substrate 12 and the upper cover plate 11. When the MOS tube is working, hot air will rise from the chip 20 and be released through the air duct, helping the chip 20 to maintain a lower operating temperature. At the same time, due to the design of the symmetrical air duct, the transmission of electrical signals will also be more stable.

[0076] Furthermore, this design can be widely used in fields that require high-performance and high-stability SMD MOS tubes 100, such as communications, electronics, automotive electronics, etc. In these fields, overheating is one of the common problems, which may cause the performance of the MOS tube to degrade or be damaged. This design can effectively guide and stabilize the airflow through the symmetrical air duct between the substrate 12 and the upper cover plate 11, helping the heat generated by the chip 20 to dissipate, thereby reducing the risk of overheating, improving the stability and reliability of the MOS tube, and making it more suitable for application in these fields.

[0077] In a specific implementation example, the heat conducting plate 40 is made of a high thermal conductivity material and is used to effectively conduct the heat generated by the chip 20 to the substrate 12 .

[0078] Specifically, the high thermal conductivity material has excellent thermal conductivity and can effectively conduct the heat generated by the chip 20 to the substrate 12, thereby avoiding performance degradation and damage caused by overheating. In addition, the high thermal conductivity material can also improve the thermal stability of the MOS tube, so that it can still maintain good working performance in a high temperature environment.

[0079] Furthermore, when the chip 20 is working, heat is generated. The heat conducting plate 40 made of high thermal conductivity material can effectively conduct the heat generated by the chip 20 to the substrate 12 by being closely connected to the chip 20. The heat can be quickly dissipated through the conduction of the heat conducting plate 40, thereby avoiding the risk of overheating. In addition, due to the excellent thermal conductivity of the high thermal conductivity material, the thermal stability of the MOS tube is also improved.

[0080] In summary, this design can be widely used in fields that require high-performance and high-stability SMD MOS tubes 100, such as communications, electronics, automotive electronics, etc. In these fields, overheating is one of the common problems, which may cause the performance of the MOS tube to degrade or be damaged. This design can effectively transfer the heat generated by the chip 20 to the substrate 12 through the heat conducting plate 40 made of high thermal conductivity material, thereby reducing the risk of overheating, improving the stability and reliability of the MOS tube, and making it more suitable for application in these fields.

[0081] In this way, the above-mentioned SMD MOS tube 100 removes power supply interference to the SMD MOS tube 100 through the filter 30 attached to one end of the chip 20, and the filter 30 is directly attached to the chip 20 to further remove noise; the heat conducting plate 40 at the other end reduces the noise of the SMD MOS tube 100 generated by current fluctuations due to heat dissipation, and the ventilation channel 13 on the shell 10 further dissipates heat, thereby reducing the interference of noise on the SMD MOS tube 100.

[0082] The above is only an implementation method of the present application. It should be pointed out that a person skilled in the art can make improvements without departing from the inventive concept of the present application, but these improvements are within the scope of protection of the present application.

Claims

1. A patch MOS tube, characterized in that: include: The housing comprises an upper cover plate and a base plate, wherein the upper cover plate is bonded to the base plate to form a cavity; A chip, the chip is located in the cavity, and the chip is used to realize switching and amplification functions to ensure reliable operation and performance optimization of the MOS tube; A filter, the filter is bonded to the chip and located between the upper cover plate and the chip, and the filter is used to effectively filter out power supply noise and radio frequency interference; A heat conducting plate is bonded and connected to the chip and is located between the substrate and the chip. The heat conducting plate is used to reduce noise generated by overheating.

2. The SMD MOS tube according to claim 1, characterized in that: The filter comprises two fixing blocks and a plurality of connecting parts. The two fixing blocks are fitted and connected with the filter and are located at two ends of the filter along the width. The connecting parts are fixedly connected with the fixing blocks and are located at one end of the filter close to the chip.

3. The SMD MOS tube according to claim 1, characterized in that: The heat conducting plate includes a concave portion, a convex portion and four placement blocks, the concave portion and the convex portion are located at one end that fits the chip, the concave portion is located between the convex portion and the placement block, the concave portion is used to place the chip, one end of the placement block is connected to the heat conducting plate, and the other end is connected to the substrate, the four placement blocks are respectively located at the four corners of the heat conducting plate, and the placement blocks are used to fix the heat conducting plate to the substrate.

4. The SMD MOS tube according to claim 3, characterized in that: The convex portion is provided with a hole corresponding to the connecting piece, and the hole is used to cooperate with the connecting piece to fix the filter, and the concave portion and the convex portion are used to make the structure of the patch MOS tube more compact.

5. The SMD MOS tube according to claim 1, characterized in that: The chip is made of low-resistance silicon to reduce the instability of the current, thereby reducing the noise generated by the current fluctuation.

6. The SMD MOS tube according to claim 1, characterized in that: The chip further comprises a pin connector and a pin, wherein one end of the pin connector is fixedly connected to the chip, and the other end of the pin connector is fixedly connected to the pin, and the pin is located between the upper cover and the substrate.

7. The SMD MOS tube according to claim 1, characterized in that: The upper cover plate is provided with a first symmetrical groove, the first symmetrical groove is located on a side which is bonded and connected to the base plate, and the first symmetrical groove is used to form a symmetrical ventilation passage of the shell.

8. The SMD MOS tube according to claim 7, characterized in that: The base plate is provided with a second symmetrical groove, the second symmetrical groove is located on a side which is in close contact with the upper cover plate, and the second symmetrical groove is used to form a symmetrical ventilation passage of the shell.

9. The SMD MOS tube according to claim 8, characterized in that: When the base plate is fitted and connected with the upper cover plate, the first symmetrical groove and the second symmetrical groove form a symmetrical ventilation passage of the shell.

10. The SMD MOS tube according to claim 1, characterized in that: The heat conducting plate is made of high thermal conductivity material and is used to effectively conduct the heat generated by the chip to the substrate.

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