N-type TOPCON single-sided battery

Abstract

The utility model discloses an N-type TOPCon single-sided cell, which relates to the technical field of solar cells and comprises a placement box, a polycrystalline silicon layer is arranged on the bottom surface of the inner wall of the placement box, and a p-type emitter is adhered to the upper side of the polycrystalline silicon layer. According to the utility model, the polycrystalline silicon layer is made of the N-type polycrystalline silicon film and the protective layer made of the silicon nitride material, so that the uniformity of the doped polycrystalline silicon layer can be greatly improved, the overall process time is further shortened, the doped polycrystalline silicon layer is protected, the conversion efficiency of the TOPCon battery is improved, and the passivation layer made of the eva adhesive film material has high transparency and high adhesive force, so that the production efficiency of the TOPCon battery is improved. The protective layer made of the silicon nitride material has the characteristics of high hardness, lubricity, wear resistance, atomic crystal, oxidation resistance at high temperature, cold and hot impact resistance, and no fragmentation after being heated to 1000 DEG C in air; and the hardness and the service life of the battery can be ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of solar cells, in particular to an N-type TOPCon single-sided cell. Background Art

[0002] As a new type of alternative energy, solar cells have made great progress with their own advantages of being green, safe and renewable. At present, photovoltaic power generation of solar cells has become relatively mature. With the rapid development of photovoltaic technology, N-type cells have been popular in the industry for their higher power generation efficiency. Among them, N-type TOPCon cells have been mass-produced.

[0003] The existing patent (Announcement No.: CN112349816A) discloses a method for preparing an efficient and low-cost N-type TOPCon cell based on PECVD technology, including removing damage from a bare silicon wafer and performing surface morphology treatment, and using plate-type PECVD to deposit a tunneling oxide layer, an intrinsic polycrystalline silicon layer, and an in-situ doped amorphous silicon layer. The thickness of the tunneling oxide layer is 1-2nm, and the thickness of the intrinsic polycrystalline layer is 10-60nm. The preparation process is based on PECVD technology, and first prepares a tunneling oxide layer on the back and superimposes a doped polycrystalline silicon layer, and then crystallizes it through a subsequent boron diffusion high-temperature process, and then prepares a front PN junction, and then passivates and prints electrodes. However, the thickness of the in-situ doped polycrystalline silicon layer of the obtained TOPCon cell is uneven, and it is difficult to substantially change the defect by adjusting the process parameters of the in-situ doping. Utility Model Content

[0004] In order to improve the uneven thickness of the in-situ doped polysilicon layer of the TOPCon cell mentioned above, it is difficult to substantially change the defect by adjusting the process parameters of the in-situ doping, the utility model provides an N-type TOPCon single-sided cell.

[0005] The utility model provides an N-type TOPCon single-sided battery, which adopts the following technical solution:

[0006] An N-type TOPCON single-sided battery comprises a placement box, wherein a polysilicon layer is arranged on the bottom surface of the inner wall of the placement box, a p-type emitter is pasted on the upper side of the polysilicon layer, a protective layer is pasted on the upper side of the p-type emitter, and a passivation layer is pasted on the upper side of the protective layer.

[0007] Through the above technical solution, it is convenient to protect the doped polysilicon layer, improve the conversion efficiency of the TOPCon battery, and ensure the hardness and service life of the battery.

[0008] Optionally, in the above-mentioned N-type TOPCON single-sided battery, the passivation layer is made of aluminum oxide with a thickness of mm.

[0009] Through the above technical solution, the melting point of the passivation layer made of aluminum oxide is 2054°C, the boiling point is 2980°C, and it has extremely high hardness.

[0010] Optionally, in the above-mentioned N-type TOPCON single-sided battery, the upper side of the passivation layer and the bottom surface of the placement box (1) are both coated with EVA film.

[0011] Through the above technical solution, the passivation layer of the EVA film material has high transparency, high adhesion, good durability and can resist high temperature, moisture, ultraviolet rays, etc.

[0012] Optionally, in the above-mentioned N-type TOPCON single-sided battery, the thickness of the polysilicon layer is 70 nm, and the material of the polysilicon layer is N-type polysilicon thin film.

[0013] Through the above technical scheme, it is convenient to control the physical and chemical properties of the N-type polysilicon thin film made of the polysilicon layer material by controlling reaction conditions, such as temperature, deposition rate, gas flow rate and other parameters. Compared with other solar cell materials, the preparation process of polysilicon thin film is relatively simple and the production cost is low. The grain size of the polysilicon thin film is between tens and hundreds of nanometers, with more grain boundaries and good absorption performance. The absorption coefficient of the polysilicon thin film is very sensitive to the wavelength of light, and the absorption performance is mainly concentrated in the 400~800nm ​​band. The polysilicon thin film has a high absorption rate and a low transmittance in this band, which is very important for solar cells. The absorption efficiency can be improved by controlling the film thickness and the reflectivity of the friction surface.

[0014] Optionally, in the above-mentioned N-type TOPCON single-sided battery, the material of the placement box is tempered glass, and the thickness of the placement box is 4 mm.

[0015] Through the above technical solution, the placement box made of tempered glass is relatively hard as a whole.

[0016] Optionally, in the above-mentioned N-type TOPCON single-sided battery, the thickness of the protective layer is 3 nm, and the material of the protective layer is silicon nitride.

[0017] Through the above technical scheme, silicon nitride has the characteristics of high hardness, lubricity, and wear resistance. It is an atomic crystal, anti-oxidation at high temperature, and it can also resist thermal shock. At the same time, it will not break even when heated to 1000 degrees in the air.

[0018] Optionally, in the above-mentioned N-type TOPCON single-sided battery, the placement box is square in shape, and the four corners of the square placement box are chamfered.

[0019] Through the above technical solution, the placement box that is easy to chamfer reduces the possibility of damage when it bumps into objects.

[0020] In summary, the present invention has at least one of the following beneficial effects:

[0021] 1. The polysilicon layer is made of N-type polysilicon thin film and a protective layer of silicon nitride material, which can greatly improve the uniformity of the doped polysilicon layer, thereby reducing the overall process time, protecting the doped polysilicon layer, and improving the conversion efficiency of the TOPCon cell.

[0022] 2. The passivation layer made of EVA film has high transparency, high adhesion and good durability. It can resist high temperature, moisture, ultraviolet rays and the protective layer made of silicon nitride has high hardness, lubricity and wear resistance. It is an atomic crystal and is resistant to oxidation at high temperature. It can also resist cold and hot shocks. At the same time, it will not break when heated to 1000 degrees in the air, thereby ensuring the hardness and service life of the battery. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a three-dimensional structural schematic diagram of the utility model;

[0024] Figure 2 It is a partial three-dimensional structural cross-sectional view of the utility model;

[0025] Figure 3 It is a partial three-dimensional structural sectional view of the placement box of the utility model.

[0026] In the figure: 1. placement box; 2. polysilicon layer; 201. silicon-containing layer; 3. p-type emitter; 4. protective layer; 5. passivation layer. Implementation

[0027] The following is combined with Figure 1-3 The utility model is described in further detail.

[0028] Please refer to the attached figure in the instruction manual Figure 1 , Figure 2 and Figure 3 The utility model provides an embodiment: an N-type TOPCON single-sided battery, including a placement box 1, a polysilicon layer 2 is arranged on the bottom surface of the inner wall of the placement box 1, a p-type emitter 3 is pasted on the upper side of the polysilicon layer 2, a protective layer 4 is pasted on the upper side of the p-type emitter 3, and a passivation layer 5 is pasted on the upper side of the protective layer 4.

[0029] See the attached drawings in the specification Figure 1 , Figure 2 and Figure 3The passivation layer 5 is made of aluminum oxide with a thickness of 2 mm. The passivation layer 5 made of aluminum oxide has a melting point of 2054° C., a boiling point of 2980° C., and has extremely high hardness.

[0030] See the attached drawings in the specification Figure 1 , Figure 2 and Figure 3 The upper side of the passivation layer 5 and the bottom surface of the placement box 1 are coated with EVA film. The passivation layer 5 made of EVA film has high transparency, high adhesion, good durability and can resist high temperature, moisture, ultraviolet rays and the like.

[0031] See the attached drawings in the specification Figure 1 , Figure 2 and Figure 3 The thickness of the polysilicon layer 2 is 70nm, and the material of the polysilicon layer 2 is N-type polysilicon thin film. The N-type polysilicon thin film made of the polysilicon layer 2 can control the reaction conditions, such as temperature, deposition rate, gas flow rate and other parameters, to regulate the physical and chemical properties of the polysilicon thin film. Compared with other solar cell materials, the preparation process of polysilicon thin film is relatively simple and the production cost is low. The grain size of the polysilicon thin film is between tens and hundreds of nanometers, with more grain boundaries and good absorption performance. The absorption coefficient of the polysilicon thin film is very sensitive to the wavelength of light, and the absorption performance is mainly concentrated in the 400~800nm ​​band. The polysilicon thin film has a high absorption rate and a low transmittance in this band, which is very important for solar cells. The absorption efficiency can be improved by controlling the film thickness and the reflectivity of the friction surface.

[0032] See the attached drawings in the specification Figure 1 , Figure 2 and Figure 3 The material of the placement box 1 is tempered glass, and the thickness of the placement box 1 is 4 mm. The placement box made of tempered glass is relatively hard as a whole.

[0033] See the attached drawings in the specification Figure 1 , Figure 2 and Figure 3 The thickness of the protective layer 4 is 3nm, and the material of the protective layer 4 is silicon nitride. Silicon nitride has high hardness, lubricity, and wear resistance. It is an atomic crystal, resistant to oxidation at high temperatures, and it can also resist cold and hot shocks. At the same time, it will not break when heated to 1000 degrees in the air.

[0034] See the attached drawings in the specification Figure 1 , Figure 2 and Figure 3 The shape of the placement box 1 is square, and the four corners of the square placement box 1 are chamfered. The placement box 1 with chamfered corners reduces the possibility of damage when it hits an object.

[0035] Working principle: When using the N-type TOPCON single-sided cell, the uniformity of the doped polysilicon layer can be greatly improved by using the polysilicon layer 2 made of N-type polysilicon thin film and the protective layer 4 made of silicon nitride. The physical and chemical properties of the polysilicon thin film can be regulated by controlling the reaction conditions, such as temperature, deposition rate, gas flow rate and other parameters. Compared with other solar cell materials, the preparation process of polysilicon thin film is relatively simple and the production cost is low. The grain size of polysilicon thin film is between tens and hundreds of nanometers, with more grain boundaries, and has good absorption performance. The absorption coefficient of polysilicon thin film is very sensitive to light. The wavelength is very sensitive, and the absorption performance is mainly concentrated in the 400~800nm ​​band. The polycrystalline silicon film has a high absorption rate and a low transmittance in this band, which is very important for solar cells. The absorption efficiency can be improved by controlling the film thickness and the reflectivity of the friction surface. At the same time, silicon nitride has high hardness, lubricity, and wear resistance. It is an atomic crystal and is resistant to oxidation at high temperatures. It can also resist cold and hot shocks. At the same time, it will not break when heated to 1000 degrees in the air. It can reduce the overall process time, protect the doped polycrystalline silicon layer, and improve the conversion efficiency of TOPCon cells.

[0036] The passivation layer 5 made of EVA film has high transparency, high adhesion, and good durability, and can resist high temperature, moisture, and ultraviolet rays. The protective layer 4 made of silicon nitride has high hardness, lubricity, and wear resistance. It is an atomic crystal, and is resistant to oxidation at high temperatures. It can also resist cold and hot shocks, and will not break even when heated to 1000 degrees in the air, thereby ensuring the hardness and service life of the battery.

[0037] The above are all preferred embodiments of the present utility model, and are not intended to limit the protection scope of the present utility model. Therefore, any equivalent changes made based on the structure, shape, and principle of the present utility model should be included in the protection scope of the present utility model.

Claims

1. An N-type TOPCON single-sided battery, comprising a storage box (1), characterized in that: A polysilicon layer (2) is provided on the bottom surface of the inner wall of the placement box (1), a p-type emitter (3) is adhered to the upper side of the polysilicon layer (2), a protective layer (4) is adhered to the upper side of the p-type emitter (3), and a passivation layer (5) is adhered to the upper side of the protective layer (4).

2. The N-type TOPCON single-sided battery according to claim 1, characterized in that: The passivation layer (5) is made of aluminum oxide with a thickness of 2 mm.

3. The N-type TOPCON single-sided battery according to claim 1, characterized in that: The upper side of the passivation layer (5) and the bottom surface of the placement box (1) are both coated with EVA film.

4. The N-type TOPCON single-sided battery according to claim 1, characterized in that: The thickness of the polysilicon layer (2) is 70 nm, and the material of the polysilicon layer (2) is N-type polysilicon thin film.

5. The N-type TOPCON single-sided battery according to claim 1, characterized in that: The material of the placement box (1) is tempered glass, and the thickness of the placement box (1) is 4 mm.

6. The N-type TOPCON single-sided battery according to claim 1, characterized in that: The thickness of the protective layer (4) is 3 nm, and the material of the protective layer (4) is silicon nitride.

7. The N-type TOPCON single-sided battery according to claim 1, characterized in that: The placement box (1) is in a square shape, and the four corners of the square placement box (1) are chamfered.

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