Gallium antimonide polycrystal synthesis double-crucible slag removal device

Abstract

The utility model relates to the technical field of slag removal, and provides a gallium antimonide polycrystal synthesis double-crucible slag removal device which comprises a first crucible and a second crucible, when the first crucible is arranged in the second crucible, the outer wall of the bottom of the first crucible and the inner wall of the bottom of the second crucible are attached and sealed, a quartz ball is arranged in the first crucible, and the quartz ball is arranged in the second crucible. The technical problem that impurities cannot be removed during synthesis of gallium antimonide polycrystals is solved.

Description

Technical Field

[0001] The utility model relates to the technical field of slag removal, in particular to a double-cruciform slag removal device for gallium antimonide polycrystal synthesis. Background Art

[0002] The LEC method and liquid-sealed Czochralski method produce gallium antimonide single crystals by adding high-purity gallium antimony raw materials and covering agents to the original quartz crucible, using a heating body to heat the raw materials to over 900 degrees to melt them, and then combining the raw materials into polycrystals at a constant temperature. The temperature is then lowered to the crystallization position, a seed crystal is lowered, and a single crystal is grown on the seed crystal.

[0003] The applicant has discovered that the existing technology has at least the following technical problems: a quartz crucible is used in the synthesis of existing gallium antimonide polycrystals. During the synthesis process, impurities introduced by raw materials and covering agents always exist in the quartz crucible, resulting in the synthetic material containing many impurities that cannot be removed. During the growth of single crystals after the synthesis of polycrystals, impurities always float on the surface of the synthetic material liquid, frequently causing twins and polycrystals to appear during single crystal pulling, seriously affecting single crystal production. Utility Model Content

[0004] The purpose of this utility model is to provide a double-cruciform slag removal device for gallium antimonide polycrystal synthesis, which at least solves the technical problem of impurity removal in the prior art. The various technical effects produced by the preferred technical solution among the many technical solutions provided by this utility model are detailed below.

[0005] To achieve the above objectives, the present invention provides the following technical solutions:

[0006] Some embodiments of the present application provide a double-crucible slag removal device for gallium antimonide polycrystal synthesis, including a first crucible and a second crucible. When the first crucible is arranged in the second crucible, the bottom outer wall of the first crucible is adhered to and sealed with the bottom inner wall of the second crucible, and a quartz ball is arranged in the first crucible.

[0007] According to some embodiments of the present application, a double-crucible slag removal device for GaSb polycrystal synthesis is provided, wherein the size of the first crucible is smaller than that of the second crucible, and the difference in diameter between the first crucible and the second crucible is at least 30 mm.

[0008] According to some embodiments of the present application, a double-crucible slag removal device for gallium antimonide polycrystal synthesis is provided, wherein the inner wall of the first crucible near the bottom is an inclined surface.

[0009] According to some embodiments of the present application, a double-crucible slag removal device for gallium antimonide polycrystal synthesis is provided, wherein a leakage hole is provided at the bottom of the first crucible, and the leakage hole is a through hole.

[0010] According to some embodiments of the present application, a double-crucible slag removal device for gallium antimonide polycrystal synthesis is provided, wherein the diameter of the quartz ball is larger than the leakage hole.

[0011] According to some embodiments of the present application, a double-crucible slag removal device for gallium antimonide polycrystal synthesis is provided, and frosted sealing surfaces are provided around the leakage hole and on the bottom inner wall of the second crucible near the leakage hole, and the diameter of the frosted sealing surface is larger than the leakage hole.

[0012] According to some embodiments of the present application, a double-crubbing slag removal device for GaSb polycrystal synthesis is provided, wherein the density of the quartz balls is greater than that of the covering agent and less than that of the synthetic material.

[0013] According to some embodiments of the present application, a double-crucible slag removal device for GaSb polycrystal synthesis is provided, wherein a side wall of the first crucible is provided with a lifting hole near the opening, and a plurality of the lifting holes are provided.

[0014] One or more technical solutions in the embodiments of the present invention have at least one of the following technical effects:

[0015] When the raw materials are heated and melted and synthesized at a constant temperature, various impurities float on the upper part of the synthetic material. After the synthesis is completed, the first pot is slowly lifted by a suspension rod, and the synthetic material can slowly leak into the second crucible from the leakage hole at the bottom of the first crucible. When the material in the first crucible is gradually reduced, the quartz ball uses gravity and the inclined surface of the bottom of the crucible to roll to the center of the inner crucible and block the leakage hole at the bottom of the first crucible, achieving the purpose of effectively removing impurities, improving the efficiency and quality of single crystal growth, and reducing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0017] Figure 1 is an exploded view of some embodiments of the present application;

[0018] Figure 2 Schematic diagram of the bottom of the first crucible in some embodiments of the present application.

[0019] In the figure: 1. First crucible; 2. Second crucible; 3. Quartz ball; 4. Leakage hole; 5. Frosted sealing surface; 6. Lifting hole. DETAILED DESCRIPTION

[0020] To make the purpose, technical solution, and advantages of the present invention more clear, the technical solution of the present invention will be described in detail below. Obviously, the embodiments described are only some of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other implementation methods obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0021] like Figure 1-2 As shown, some embodiments of the present application provide a double-crucible slag removal device for gallium antimonide polycrystal synthesis, comprising a first crucible 1 and a second crucible 2. When the first crucible 1 is arranged in the second crucible 2, the bottom outer wall of the first crucible 1 is adhered to and sealed with the bottom inner wall of the second crucible 2, and a quartz ball 3 is arranged in the first crucible 1.

[0022] In a specific implementation, the first crucible 1 is an inner crucible, and the second crucible 2 is an outer crucible. A leakage hole 4 is provided at the bottom of the first crucible 1. The leakage hole 4 is a through hole, so that the synthetic material can leak out from the leakage hole 4. Preferably, the density of the quartz ball 3 is greater than that of the covering agent and less than that of the synthetic material.

[0023] Preferably, the first crucible 1 is smaller than the second crucible 2 , and the difference between the diameters of the first crucible 1 and the second crucible 2 is at least 30 mm.

[0024] In specific implementation, an inner crucible with a diameter about 30 mm smaller than that of the outer crucible is added to the outer quartz crucible for polycrystal synthesis and slag removal, and the outer crucible is used for single crystal growth.

[0025] In some embodiments, a hanging hole 6 is provided on the side wall of the first crucible 1 near the opening, and a plurality of the hanging holes 6 are provided.

[0026] In specific implementation, the hoisting hole 6 is provided to facilitate lifting the first crucible 1 .

[0027] In some embodiments, the inner wall of the first crucible 1 near the bottom is an inclined surface.

[0028] During specific implementation, the lifting rod lifts the inner crucible and the impurities inside it are lifted together, and then the inner crucible is placed on the side above the outer crucible. Since the speed of material leakage is controllable, impurities leakage caused by excessive flow rate is avoided.

[0029] In some embodiments, the diameter of the quartz ball 3 is larger than the leakage hole 4 .

[0030] During specific implementation, the quartz balls 3 of appropriate size can block the leakage holes 4 .

[0031] In some embodiments, frosted sealing surfaces 5 are provided around the leakage hole 4 and on the bottom inner wall of the second crucible 2 near the leakage hole 4 . The diameter of the frosted sealing surface 5 is larger than that of the leakage hole 4 .

[0032] In a specific implementation, by providing the frosted sealing surface 5 , when the first crucible 1 is placed in the second crucible 2 , the bottom of the first crucible 1 and the bottom of the second crucible 2 are adhered together and sealed.

[0033] In a specific implementation, the first crucible 1 is placed in the second crucible 2, the first outer crucible 1 is sealed by using the frosted small surface at the bottom, various raw materials are placed in the first crucible 1, and then a quartz ball 3 is placed. The density of the quartz ball 3 is greater than the covering agent and less than the synthetic material. When the raw materials are heated and melted and synthesized at a constant temperature, various impurities float on the upper part of the synthetic material. After the synthesis is completed, the first crucible 1 is slowly lifted by a hanging rod, and the synthetic material slowly leaks into the second crucible 2 from the leakage hole 4 at the bottom of the first crucible 1. When the material in the first crucible 1 is gradually reduced, the quartz ball 3 uses gravity to The inclined surface at the bottom of the first crucible 1 rolls to the center of the bottom of the first crucible 1 and blocks the leakage hole 4 at the bottom of the first crucible 1. The calculated and designed quartz ball 3 is partially immersed in the synthetic material. The immersion height is slightly greater than the thickness of the upper impurities to be removed. The lifting rod lifts the first crucible 1 and the internal impurities are lifted together. Then the first crucible 1 is swung to the side above the second crucible 2. Since the speed during leakage is controllable, the leakage of impurities caused by excessive flow rate is avoided, thereby achieving the purpose of effectively removing impurities, improving the efficiency and quality of single crystal growth, and reducing costs.

[0034] In the description of the present invention, it should be noted that, unless otherwise specified, "plurality" means two or more; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings and are intended only to facilitate the description of the present invention and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific direction, be constructed and operate in a specific direction, and therefore should not be construed as limiting the present invention. In addition, the terms "first", "second", "third", etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0035] It should also be noted that, in the description of this utility model, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; and direct or indirect connections through an intermediary. Those skilled in the art will understand the specific meanings of these terms in this utility model depending on the specific circumstances.

[0036] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A double crucible slag removal device for gallium antimonide polycrystal synthesis, characterized in that: It comprises a first crucible and a second crucible. When the first crucible is arranged in the second crucible, the bottom outer wall of the first crucible is attached to and sealed with the bottom inner wall of the second crucible. A quartz ball is arranged in the first crucible.

2. A double crucible slag removal device for GaSb polycrystal synthesis according to claim 1, characterized in that: The first crucible is smaller than the second crucible, and the difference between the diameters of the first crucible and the second crucible is at least 30 mm.

3. A double crucible slag removal device for GaSb polycrystal synthesis according to claim 2, characterized in that: The inner wall of the first crucible close to the bottom is an inclined surface.

4. A double crucible slag removal device for GaSb polycrystal synthesis according to claim 3, characterized in that: A material leakage hole is provided at the bottom of the first crucible, and the material leakage hole is a through hole.

5. A double-crystal slag removal device for GaSb polycrystal synthesis according to claim 4, characterized in that: The diameter of the quartz ball is larger than the leakage hole.

6. A double-crystal slag removal device for GaSb polycrystal synthesis according to claim 5, characterized in that: A frosted sealing surface is arranged around the leakage hole and on the inner wall of the bottom of the second crucible near the leakage hole. The diameter of the frosted sealing surface is larger than the leakage hole.

7. A double-crystal slag removal device for GaSb polycrystal synthesis according to claim 6, characterized in that: The density of the quartz balls is greater than that of the covering agent and less than that of the synthetic material.

8. The double-crubbing slag removal device for GaSb polycrystal synthesis according to claim 7, characterized in that: A hanging hole is provided on the side wall of the first crucible near the opening, and a plurality of the hanging holes are provided.

Images