TGV through hole thermoelectric module and device
By setting TGV through holes on the glass substrate and penetrating the thermoelectric arm, the problems of complex preparation processes of existing micro thermoelectric devices and low aspect ratio of thermoelectric arms are solved, and higher power generation efficiency or refrigeration efficiency is achieved, and production costs are reduced.
Patent Information
- Application Number
- CN202420635349.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-29
- Publication Date
- 2025-03-07
- Estimated Expiration
- 2034-03-29
AI Technical Summary
The existing micro thermoelectric devices have low power generation or refrigeration efficiency due to complex preparation processes and low aspect ratio of the thermoelectric arm, and the heat transfer is affected by substrate spacing, which reduces the overall performance of the device.
The TGV through-hole thermoelectric module structure is adopted, in which the thermoelectric arm penetrates the TGV through-hole of the glass substrate, and the thickness of the thermoelectric arm is the thickness of the glass substrate, which directly contacts the hot end and cold end of the micro electronic device to eliminate the barrier between the substrates to heat flow transmission.
It improves the power generation efficiency or refrigeration efficiency of thermoelectric devices, simplifies the preparation process, reduces production costs, and is suitable for power supply to micro electronic devices.
Smart Images
Figure CN222582918U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of thermoelectric conversion, in particular to a TGV through-hole thermoelectric module and a device. Background Art
[0002] Thermoelectric materials are materials that can convert heat energy into electrical energy and vice versa. They have Seebeck effect and Peltier effect. Seebeck effect converts the temperature difference of thermoelectric materials into electric potential difference, which can be used for power generation; while Peltier effect generates temperature difference through the electric potential difference of thermoelectric materials, which can be used for cooling.
[0003] With the development of science and technology, electronic products are moving towards a more miniaturized direction. However, with the miniaturization of electronic devices, the corresponding power supply problem has gradually become prominent. Traditional chemical fuel cells are limited in size and service life and need to be replaced regularly, which limits their application scenarios, such as sensors in remote areas and deep-sea exploration; solar cells are limited to being used in places with sufficient sunlight. Micro thermoelectric devices use the Seebeck effect to directly convert waste heat in the environment into electrical energy. Thermoelectric devices have a simple structure and no moving parts, making them very suitable as power supplies for microelectronic devices.
[0004] However, conventional thermoelectric devices are three-dimensional block structures with large sizes, which are not suitable for microelectronic devices. Micro thermoelectric devices are transformed from the original three-dimensional block structure to a one-dimensional film or nanowire structure. One-dimensional structures such as thermoelectric films are flexible compared to three-dimensional block structures, which can reduce the use of materials and have a larger contact area. The thermoelectric arms of longitudinally structured thermoelectric devices have a high integration density and can use a small temperature difference to generate electricity or a small current for cooling. However, due to the shortcomings of the preparation process of existing micro-thermoelectric power generation devices, micron-level thermoelectric arms are often made using micro-nano processing technology. Due to the limited thickness of micro-nano processed films, the aspect ratio of the thermoelectric arms is often relatively low, and the temperature difference generated is small. In addition, the film needs to be formed on the substrate, which affects the transfer of heat and reduces the power generation power or cooling efficiency of the thermoelectric device.
[0005] A typical thermoelectric arm structure is as follows: Figure 1 As shown. The first substrate 5 and the second substrate 6 are placed at the cold and hot ends, respectively, with temperatures T1 and T2, respectively. The third electrode 7 is placed on the first substrate 5, and the fourth electrode 8 is in contact with the second substrate 6. N-type thermoelectric material 9 and P-type thermoelectric material 10 are made between the third electrode 7 and the fourth electrode 8, respectively, to form a thermoelectric arm. Figure 1In the structure shown, the heat flow flows from the hot end to the cold end, and the holes in the P-type thermoelectric material 10 and the electrons in the N-type thermoelectric material 9 also move from the hot end to the cold end, forming a positive charge on the electrode adjacent to the P-type thermoelectric material 10 and a negative charge on the electrode adjacent to the N-type thermoelectric material 9, thereby forming a potential difference between the two electrodes to achieve the purpose of power generation. If a potential difference or voltage is applied between the two electrodes, the positive electrode is connected to the end of the N-type thermoelectric material 9 and the negative electrode is connected to the end of the P-type thermoelectric material 10, as shown in FIG. Figure 2 As shown in the figure, the movement of charge carriers in the conductor forms an electric current. Since the charge carriers are at different energy levels in different materials, when they move from a high energy level to a low energy level, they release excess energy; on the contrary, when they move from a low energy level to a high energy level, they absorb energy from the outside world. Figure 2 The device shown absorbs heat from the cold end and releases it to the hot end, thereby achieving the purpose of cooling.
[0006] However, the thermoelectric arm structure requires a relatively complex process to be manufactured, and there is a substrate gap between the third electrode 7 and the fourth electrode 8 and the cold and heat sources, which affects the heat transfer and reduces the power generation power or cooling efficiency of the thermoelectric device. Utility Model Content
[0007] The utility model aims to provide a TGV through-hole thermoelectric module and device to solve the above technical problems, improve the power generation power or cooling efficiency of the thermoelectric device, and effectively reduce the production cost.
[0008] In order to solve the above technical problems, the utility model provides a TGV through-hole thermoelectric module, including a top electrode, a bottom electrode and a plurality of thermoelectric arms, and also includes a glass substrate; a plurality of TGV through-holes are arranged on the glass substrate; the thermoelectric arms penetrate the glass substrate and are arranged in the TGV through-holes; and the plurality of thermoelectric arms are electrically connected through the top electrode or the bottom electrode.
[0009] The TGV through-hole thermoelectric module provided in the above scheme has a thermoelectric arm thickness that is the thickness of the glass substrate, which is much higher than the film, and can achieve higher power generation efficiency or cooling efficiency; and the thermoelectric arm in the structure can directly contact the hot end and the cold end of the microelectronic device, eliminating the barrier effect of the glass layer on heat flow transfer; at the same time, the thermoelectric module has a simple structure and is easy to prepare, which can greatly reduce the preparation cost of microelectronic devices.
[0010] Furthermore, the TGV through hole is a straight hole structure, a sand bucket hole structure or a tapered hole structure.
[0011] Furthermore, the top electrode includes a plurality of first electrodes, which are used to electrically connect a single thermoelectric arm or to electrically connect two adjacent thermoelectric arms; the bottom electrode includes a plurality of second electrodes, which are used to electrically connect a single thermoelectric arm or to electrically connect two adjacent thermoelectric arms.
[0012] It should be noted that the number of thermoelectric arms of the thermoelectric module can be set according to different needs. The number is not limited and can be tens, hundreds, thousands, tens of thousands, up to hundreds of thousands, tens of millions, or even more, to meet the requirements of different application scenarios for device size, power, efficiency, cost and other performance. Therefore, multiple electrodes are required to connect the thermoelectric arms to the circuit.
[0013] Furthermore, the thermoelectric arm includes a P-type thermoelectric arm and an N-type thermoelectric arm; the P-type thermoelectric arm and the N-type thermoelectric arm are arranged at intervals on the glass substrate; one end of the P-type thermoelectric arm is electrically connected to the top electrode, and the other end is electrically connected to the bottom electrode; one end of the N-type thermoelectric arm is electrically connected to the top electrode, and the other end is electrically connected to the bottom electrode; wherein, only one end of adjacent P-type thermoelectric arms and N-type thermoelectric arms are directly electrically connected through the top electrode or the bottom electrode.
[0014] Furthermore, the P-type thermoelectric arm is Sb 2 TeSe 2 Structure, SbSnTeSe 2 Structure, SbAgTeSe 2 Structure, Bi 2 (Sb,Te) 3 structure, FeNbSb structure or CeFeCoSb structure.
[0015] Furthermore, the N-type thermoelectric arm is Bi 2 Te 3 Structure, Mg 3 (Sb,Bi) 2 structure, MgSnGe structure, PbTe structure, BaCoNiSb structure or CaBaSrCoSb structure.
[0016] Furthermore, the top electrode or the bottom electrode is a Cu structure, an Al structure or a Ni structure.
[0017] Furthermore, the thickness of the top electrode or the bottom electrode is 1-5 um.
[0018] Furthermore, a plurality of TGV through holes are distributed in an array on the glass substrate.
[0019] The utility model provides a TGV through-hole thermoelectric device, comprising the above-mentioned TGV through-hole thermoelectric module, leads and wiring ports. The TGV through-hole thermoelectric module is electrically connected to the wiring port via the leads.
[0020] The above scheme adopts advanced TGV technology, by filling thermoelectric materials inside the through hole and forming circuits on the upper and lower surfaces of the glass to form a thermoelectric device structure. The thickness of the thermoelectric arm is the thickness of the glass substrate, which is much higher than the thin film, and can obtain higher power generation efficiency or cooling efficiency; and the thermoelectric arm in the structure can directly contact the hot end and the cold end of the microelectronic device, eliminating the barrier effect of the glass layer on the heat flow transfer; at the same time, the structure of the thermoelectric module is simple and easy to prepare, which can greatly reduce the preparation cost of microelectronic devices. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 A schematic diagram of the power generation principle of the existing thermoelectric arm structure provided as the background technology of the utility model;
[0022] Figure 2 A schematic diagram of the refrigeration principle of the existing thermoelectric arm structure provided as the background technology of the utility model;
[0023] Figure 3 A schematic diagram of the structure of a TGV through-hole thermoelectric module provided in one embodiment of the utility model;
[0024] Figure 4 (a)- Figure 4 (c) is a schematic diagram of a TGV through-hole structure provided by an embodiment of the utility model;
[0025] Figure 5 A schematic diagram of a first process flow of a preparation process provided by an embodiment of the utility model;
[0026] Figure 6 A schematic diagram of a second process flow of a preparation process provided by an embodiment of the utility model;
[0027] Figure 7 A third flow diagram of a preparation process provided by an embodiment of the utility model;
[0028] Figure 8 A schematic diagram of a fourth process flow of a preparation process provided by an embodiment of the utility model;
[0029] Fig. 9 A fifth flow chart of a preparation process provided by an embodiment of the utility model;
[0030] Fig.10 A sixth flow chart of a preparation process provided by an embodiment of the present utility model;
[0031] Wherein: 1. top electrode; 2. bottom electrode; 3. thermoelectric arm; 31. P-type thermoelectric arm; 32. N-type thermoelectric arm; 4. glass substrate. DETAILED DESCRIPTION
[0032] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0033] See also Figure 3 The present embodiment provides a TGV through-hole thermoelectric module, including a top electrode 1, a bottom electrode 2 and a plurality of thermoelectric arms 3, and also includes a glass substrate 4; a plurality of TGV through-holes are arranged on the glass substrate 4; the thermoelectric arms 3 penetrate the glass substrate 4 and are arranged in the TGV through-holes; and the plurality of thermoelectric arms 3 are electrically connected through the top electrode 1 or the bottom electrode 2.
[0034] The TGV through-hole thermoelectric module provided in this embodiment has a thermoelectric arm 3 whose thickness is the thickness of the glass substrate 4, which is much higher than the film, and can obtain higher power generation efficiency or cooling efficiency; and the thermoelectric arm 3 in this structure can directly contact the hot end and the cold end of the microelectronic device, eliminating the barrier effect of the glass layer on the heat flow transfer; at the same time, the thermoelectric module has a simple structure and is easy to prepare, which can greatly reduce the preparation cost of the microelectronic device.
[0035] Further, see Figure 4 (a)- Figure 4 As shown in (c), the TGV through hole is a straight hole structure, a sand bucket hole structure or a tapered hole structure. Specifically, Figure 4 The TGV through-hole in (a) is a straight hole structure. Figure 4 The TGV through hole in (b) is a sand bucket hole structure. Figure 4 The TGV through-hole in (c) is a tapered hole structure.
[0036] Furthermore, the top electrode 1 includes a plurality of first electrodes, which are used to electrically connect a single thermoelectric arm 3 or to electrically connect two adjacent thermoelectric arms 3 ; the bottom electrode 2 includes a plurality of second electrodes, which are used to electrically connect a single thermoelectric arm 3 or to electrically connect two adjacent thermoelectric arms 3 .
[0037] In this embodiment, if the thermoelectric arm 3 connected to the electrode is the first or the last one, it can be connected to the adjacent thermoelectric arm 3 through the electrode at only one end, and the other end can be used as a wiring port and connected to the actual circuit for use.
[0038] It should be noted that the number of the thermoelectric arms 3 of the thermoelectric module can be set according to different needs. The number is not limited and can be tens, hundreds, thousands, tens of thousands, up to hundreds of thousands, tens of millions, or even more, to meet the requirements of different application scenarios for device size, power, efficiency, cost and other performance. Therefore, multiple electrodes are required to connect the thermoelectric arms 3 to the circuit.
[0039] Furthermore, the thermoelectric arm 3 includes a P-type thermoelectric arm 31 and an N-type thermoelectric arm 32; the P-type thermoelectric arm 31 and the N-type thermoelectric arm 32 are arranged at intervals on the glass substrate 4; one end of the P-type thermoelectric arm 31 is electrically connected to the top electrode 1, and the other end is electrically connected to the bottom electrode 2; one end of the N-type thermoelectric arm 32 is electrically connected to the top electrode 1, and the other end is electrically connected to the bottom electrode 2; wherein, only one end of the adjacent P-type thermoelectric arm 31 and N-type thermoelectric arm 32 is directly electrically connected through the top electrode 1 or the bottom electrode 2.
[0040] In this embodiment, in order to enable the N-type thermoelectric arm 32 and the P-type thermoelectric arm 31 to form a series circuit with the electrode and thus realize power generation, one end of the adjacent P-type thermoelectric arm 31 and the N-type thermoelectric arm 32 is electrically connected through the electrode, and the other end is electrically connected to another adjacent thermoelectric arm 3.
[0041] Furthermore, the P-type thermoelectric arm 31 is Sb 2 TeSe 2 Structure, SbSnTeSe 2 Structure, SbAgTeSe 2 Structure, Bi 2 (Sb,Te) 3 structure, FeNbSb structure or CeFeCoSb structure; the material thickness range depends on the specific application and can be between 1-100um.
[0042] Furthermore, the N-type thermoelectric arm 32 is Bi 2 Te 3 Structure, Mg 3 (Sb,Bi) 2 structure, MgSnGe structure, PbTe structure, BaCoNiSb structure or CaBaSrCoSb structure; the material thickness range depends on the specific application and can be between 1-100um.
[0043] Furthermore, the top electrode 1 or the bottom electrode 2 is a Cu structure, an Al structure or a Ni structure.
[0044] Furthermore, the thickness of the top electrode 1 or the bottom electrode 2 is 1-5 um.
[0045] Furthermore, a plurality of TGV through holes are distributed in an array on the glass substrate 4. The TGV technology can be used to densely arrange the through hole array on the glass substrate 4, thereby preparing a complete thermoelectric module. Compared with the prior art, the integration is greatly increased, and the size is further reduced.
[0046] In order to further illustrate the specific preparation process of the TGV through-hole thermoelectric module provided by the present invention, this embodiment provides a preparation process, which specifically includes:
[0047] Step 1: Production of TGV through-holes:
[0048] On the selected glass substrate 4, TGV technology is used to make through holes on the glass substrate 4. The process includes photolithography process: coating, alignment, exposure, development, hardening, through hole etching, degumming and cleaning.
[0049] In the above process steps, through-hole etching is the key technology. The etching methods can be as follows:
[0050] 1) Wet etching: Etching agents are prepared according to different needs. Parameters such as etching temperature and stirring speed are also set according to different through-hole sizes and etching depth requirements. The corrosive solutions that can be used for wet etching of glass include: hydrofluoric acid (HF+H 2 O), hydrofluoric acid plus nitric acid (HF+HNO 3 +H 2 O) and hydrofluoric acid plus ammonium fluoride (HF+NH 4 F+H 2 O), prepared in a certain ratio according to specific requirements.
[0051] Optionally, before the coating, an anti-corrosion protective film such as chromium, silicon nitride, ITO, etc. can be applied to the glass surface. Wet etching has relatively high requirements for the protective film, especially when deep etching is performed. Since a higher etching rate is desired, the corrosion resistance of the protective film under long-term immersion in the etching solution is required to be relatively high. The use of photoresist plus a chromium layer can provide relatively good protection for the graphics that need to be protected.
[0052] Due to the isotropic properties of glass, the widening of wet etching is inevitable. When designing the mask, the width of the lateral corrosion must be taken into account. The designed mask width must be smaller than the actual required channel width. After lateral corrosion, the actual requirements can be met. Furthermore, by optimizing the mask design, photolithography process conditions, solution type and ratio selection, through-hole structures that meet different sizes and morphologies can be obtained.
[0053] 2) Dry etching: Dry etching refers to plasma etching, which is usually done by inductively coupled plasma (ICP). For glass etching, the main etching gas is based on fluorocarbon gas or sulfur hexafluoride gas mixed with other gases, such as Ar, O 2 and H 2 By optimizing process parameters such as temperature, pressure, gas flow and ratio, an etching rate of 0.2-2um / min and a smooth glass through hole can be obtained. By optimizing mask design, photolithography process conditions, power, temperature, pressure, gas flow and ratio in the etching process, a slot structure that meets the size and morphology requirements can be obtained.
[0054] 3) Laser induced deep etching method: Laser induced deep etching process can also be used to make glass through holes. This method does not require a mask, but defines the size and distribution of the pattern through laser modification. The main steps are: (1) Design the through hole pattern, including the design of the pattern distribution and size, and form a design file; (2) According to the graphic design, the glass substrate 4 is selectively laser modified; in the laser modification process, the laser is focused on different parts of the glass substrate 4, and the laser power and irradiation time are adjusted to obtain the required depth and morphology; (3) The cavity is etched using the aforementioned wet etching method. By selecting the type and ratio of the etching solution, as well as the etching time, the size, depth and morphology of the through hole can be controlled.
[0055] Step 2: Production of thermoelectric arm 3:
[0056] In this embodiment, thermoelectric materials are fabricated in the glass through hole to form thermoelectric arms 3, including N-type thermoelectric arms 32 and P-type thermoelectric arms 31. The thermoelectric materials can be fabricated by the following methods:
[0057] 1) Physical deposition method: Physical vapor deposition (PVD) technology refers to the technology of using physical methods to vaporize the surface of the material source into gaseous atoms or molecules, or partially ionize into ions under vacuum conditions, and deposit a thin film with certain special functions on the surface of the substrate through a low-pressure gas (or plasma) process. The main methods of physical vapor deposition are: vacuum evaporation, sputtering, arc plasma coating, ion plating and molecular beam epitaxy.
[0058] 2) Sintering method: The sintering method is a process of making thermoelectric materials by converting powdered thermoelectric materials into a dense body with high consistency through a sintering process. During the sintering process, the thermoelectric material powder is heated or pressurized, the particles are bonded together, the grains grow, the pores and grain boundaries are gradually reduced, and finally a polycrystalline thermoelectric material is formed. Sintering methods can be divided into different types and methods: (1) Normal pressure sintering method: In this environment, the material is sintered under atmospheric pressure without being pressurized. This is the most common sintering method and is suitable for most materials. (2) Hot pressing sintering method: This method is to pressurize and heat at the same time, usually under high-frequency induction. This method can produce high-strength dense materials. (3) High temperature isostatic pressing method: It can be sintered at very low temperatures and is suitable for materials that are difficult to sinter at normal pressure. This method subjects the material to isotropic pressure and can sinter at extremely low temperatures, making it possible to sinter materials that cannot be sintered at normal pressure. The thermoelectric materials produced by this method have excellent performance. (4) Atmosphere sintering method: In order to prevent oxidation or other problems of certain materials when sintered in air, sintering under specific gas atmosphere conditions can be used. Other sintering methods include electric field sintering, ultra-high pressure sintering, activated sintering and activated hot pressing sintering.
[0059] It should be noted that a suitable method can be selected according to the properties of different thermoelectric materials, and a thermoelectric material arm with excellent performance can be manufactured by optimizing the process conditions.
[0060] 3) Zone melting method: Zone melting method is also called regional melting method. It is a common method for preparing high-purity metals, semiconductor single crystals, inorganic crystals and other materials. Under an inert atmosphere, a narrow melting zone is continuously moved along the sample, and the impurities are separated by using the difference in solubility of impurities in the solid material (unmelted part) and the molten material to achieve the purpose of material purification. The ratio of the concentration of the solute in the solid phase to the concentration in the liquid phase is called the distribution coefficient, and the size of the distribution coefficient is determined by the thermodynamic properties of the system. The characteristic of this process is that at any time, only a part or one end of the raw material rod is in a molten state. The single crystal growth is completed by moving the heating coil or moving the raw material rod to push the melting zone to the other part or the other end. With the help of repeated operations of remelting and recrystallization, the crystal composition can be guaranteed to be pure and the crystal quality can be excellent.
[0061] First, the thermoelectric material is made into a thin rod with a length of 10 to 500um or longer, and placed in a glass through hole. When the furnace is heated, the thermoelectric material that contacts the seed crystal melts. As the furnace moves forward slowly and evenly, directional solidification occurs at the seed crystal, and the raw material ingot continues to melt and directionally solidify, gradually generating a single crystal, forming a thermoelectric material arm in the glass through hole. If the rod-shaped raw material to be pulled into a single crystal is placed vertically, and the heating electric furnace outside the tube moves vertically and evenly up and down slowly, a pure single crystal can also be obtained. This is also called the crucible-free zone melting method.
[0062] It should be noted that the thermoelectric arm 3 may also be manufactured by other methods, such as electroplating, conductive paste coating, etc.
[0063] Step 3: Preparation of electrodes:
[0064] There are different methods for electrode production. Taking the metal lift-off method as an example, the process steps include:
[0065] 1) Photolithography, including coating, alignment, exposure, development, etc.;
[0066] 2) Metal deposition, the metal can be Cu, Al, Ni, etc., with a thickness range of 1-5um;
[0067] 3) Metal stripping: Use the metal stripping process to remove the metal on the photoresist, remove the photoresist at the same time, and perform cleaning, etc.
[0068] It should be noted that the electrodes can also be made by metal etching or metal electroplating.
[0069] In brief, the above preparation process can be found in Figure 5-Figure 10 The first group of TGV through holes is made on the glass substrate 4, and its structure can be seen in FIG. Figure 5 As shown; P-type thermoelectric material is made in the first group of TGV through holes, and its structure can be seen in Figure 6 As shown; a second set of TGV through holes is made on the glass substrate 4, and its structure can be seen in Figure 7 As shown; N-type thermoelectric material is made in the second group of TGV through holes, and its structure can be seen in Figure 8 As shown; a top electrode 1 is made on a glass substrate 4, and its structure can be seen in Fig. 9 As shown; the bottom electrode 2 is made on the glass substrate 4, and its structure can be seen in Fig.10 shown.
[0070] In this embodiment, TGV glass is used to prepare the thermoelectric module, and the diameter of the TGV through hole can be controlled within a few microns, which has a very high compatibility with the microelectronic device; secondly, the density of the TGV through hole is high, and a high-density thermoelectric arm 3 can be obtained; thirdly, the height of the thermoelectric arm 3 is the thickness of the glass, which is much thicker than the film, and a higher power generation efficiency or cooling efficiency can be obtained; fourthly, because the thermoelectric arm 3 in the through hole is directly in contact with the hot end and the cold end of the microelectronic device, the barrier effect of the glass layer on the heat flow transfer is eliminated; finally, the preparation process of the module is simple, which greatly reduces the preparation cost of the microelectronic device.
[0071] This embodiment further provides a TGV through-hole thermoelectric device, including the above-mentioned TGV through-hole thermoelectric module, leads and wiring ports, wherein the TGV through-hole thermoelectric module is electrically connected to the wiring ports through the leads.
[0072] This embodiment adopts advanced TGV technology, fills thermoelectric materials inside the through hole, and forms circuits on the upper and lower surfaces of the glass to form a thermoelectric device structure. The thickness of the thermoelectric arm 3 is the thickness of the glass substrate 4, which is much higher than the film, and can obtain higher power generation efficiency or cooling efficiency; and the thermoelectric arm 3 in the structure can directly contact the hot end and the cold end of the microelectronic device, eliminating the barrier effect of the glass layer on the heat flow transfer; at the same time, the structure of the thermoelectric module is simple and easy to prepare, which can greatly reduce the preparation cost of the microelectronic device.
[0073] The above is a preferred embodiment of the present invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications are also considered to be within the protection scope of the present invention.
Claims
1. A TGV through-hole thermoelectric module, comprising a top electrode (1), a bottom electrode (2) and a plurality of thermoelectric arms (3); characterized in that: It also comprises a glass substrate (4); a plurality of TGV through holes are arranged on the glass substrate (4); the thermoelectric arm (3) passes through the glass substrate (4) and is arranged in the TGV through hole; and the plurality of thermoelectric arms (3) are electrically connected via the top electrode (1) or the bottom electrode (2).
2. A TGV through-hole thermoelectric module according to claim 1, characterized in that: The TGV through hole is a straight hole structure, a sand bucket hole structure or a tapered hole structure.
3. The TGV through-hole thermoelectric module according to claim 1, characterized in that: The top electrode (1) includes a plurality of first electrodes, wherein the first electrodes are used to electrically connect a single thermoelectric arm (3) or to electrically connect two adjacent thermoelectric arms (3); the bottom electrode (2) includes a plurality of second electrodes, wherein the second electrodes are used to electrically connect a single thermoelectric arm (3) or to electrically connect two adjacent thermoelectric arms (3).
4. The TGV through-hole thermoelectric module according to claim 3, characterized in that: The thermoelectric arm (3) comprises a P-type thermoelectric arm (31) and an N-type thermoelectric arm (32); the P-type thermoelectric arm (31) and the N-type thermoelectric arm (32) are arranged on the glass substrate (4) at intervals; one end of the P-type thermoelectric arm (31) is electrically connected to the top electrode (1), and the other end is electrically connected to the bottom electrode (2); one end of the N-type thermoelectric arm (32) is electrically connected to the top electrode (1), and the other end is electrically connected to the bottom electrode (2); wherein only one end of the adjacent P-type thermoelectric arm (31) and the N-type thermoelectric arm (32) is directly electrically connected via the top electrode (1) or the bottom electrode (2).
5. The TGV through-hole thermoelectric module according to claim 4, characterized in that: The P-type thermoelectric arm (31) is a Sb2TeSe2 structure, a SbSnTeSe2 structure, a SbAgTeSe2 structure, a Bi2(Sb,Te)3 structure, a FeNbSb structure or a CeFeCoSb structure.
6. The TGV through-hole thermoelectric module according to claim 4, characterized in that: The N-type thermoelectric arm (32) is a Bi2Te3 structure, a Mg3(Sb,Bi)2 structure, a MgSnGe structure, a PbTe structure, a BaCoNiSb structure or a CaBaSrCoSb structure.
7. A TGV through-hole thermoelectric module according to any one of claims 1 to 6, characterized in that: The top electrode (1) or the bottom electrode (2) is a Cu structure, an Al structure or a Ni structure.
8. The TGV through-hole thermoelectric module according to claim 7, characterized in that: The thickness of the top electrode (1) or the bottom electrode (2) is 1-5 um.
9. The TGV through-hole thermoelectric module according to claim 7, characterized in that: The plurality of TGV through holes are distributed in an array on the glass substrate (4).
10. A TGV through-hole thermoelectric device, characterized in that: It comprises the TGV through-hole thermoelectric module according to any one of claims 1 to 9, a lead wire and a wiring port, wherein the TGV through-hole thermoelectric module is electrically connected to the wiring port through the lead wire.