Strong magnetic sputtering cathode with high target material utilization rate
By using a motor-driven permanent magnet assembly in the magnetron sputtering cathode to form four sets of sputtering rings, the problem of low utilization of ferromagnetic targets is solved, and the high utilization rate and sputtering rate of nickel targets are improved.
Patent Information
- Application Number
- CN202420631975.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-29
- Publication Date
- 2025-03-11
- Estimated Expiration
- 2034-03-29
AI Technical Summary
In magnetron sputtering technology, the utilization rate of target materials is extremely low. The magnetic force lines passing through the surface of the target are narrower and sharper, resulting in the sputtering rings being narrower and sharper.
A strong magnetic sputtering cathode with high target utilization is designed. By installing the first N-type permanent magnet, two sets of second N-type permanent magnets and four sets of S-type permanent magnets in the motor driving mechanism, four sets of sputtering rings are formed, which improves the slow rotation of the magnetic field on the surface of the target and enhances the utilization rate of the target material.
The permanent magnet assembly is driven to rotate by a motor drive mechanism, and four sets of sputtering rings are generated, which significantly improves the utilization rate of the nickel target, making it equivalent to the sputtering rate and uniformity of the conventional structural magnetic field-enhanced sputtering cathode.
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Figure CN222593994U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of micro-nano processing, in particular to a strong magnetic sputtering cathode with high target material utilization rate. Background Art
[0002] Magnetron sputtering technology is widely used in semiconductor coating, optical coating, tool coating and other fields. It is one of the key equipment types in modern micro-nano processing. Since the invention of magnetron sputtering technology in the mid-1970s, one of the main directions of improvement of magnetron sputtering technology is how to improve the utilization rate of target materials, thereby reducing production costs. For typical planar target magnetron sputtering cathodes, the target utilization rate is generally between 30-35%. However, the sputtering cathode of sputtering ferromagnetic targets has an extremely low target utilization rate, generally between 10-12%. The so-called "ferromagnetic" material is a material with magnetic conductivity, such as iron, cobalt, nickel, etc., among which nickel is a very commonly used sputtering material. Since the ferromagnetic target material has magnetic conductivity, it is difficult for the magnetic field lines to penetrate the target material. Therefore, compared with the conventional sputtering cathode, the sputtering cathode of the sputtering ferromagnetic target material needs to enhance the magnetic field strength of the permanent magnet, which is called "enhanced magnetic field sputtering cathode". Although some magnetic lines of force can penetrate the ferromagnetic target after the magnetic field is enhanced, the magnetic lines of force penetrating the target surface are narrower and sharper than those of conventional sputtering cathodes, and the corresponding sputtering rings are also narrower and sharper, and the target utilization rate is very low. Therefore, we propose a strong magnetic sputtering cathode with high target utilization rate to solve the above problems. Utility Model Content
[0003] The utility model aims to provide a strong magnetic sputtering cathode with high target material utilization rate, so as to solve the problem in the above background technology that after the magnetic field is enhanced, part of the magnetic lines of force can pass through the ferromagnetic target material, and the magnetic lines of force passing through the target material (surface) are narrower and sharper than those of conventional sputtering cathodes, and the corresponding sputtering rings are also narrower and sharper, resulting in very low target material utilization rate.
[0004] To achieve the above object, the utility model provides the following technical solutions: a strong magnetic sputtering cathode with high target material utilization rate, comprising a motor drive mechanism and a target material, wherein the target material is installed in the motor drive mechanism;
[0005] A pressure ring is installed in the motor drive mechanism, an insulating ring is installed in the lower end of the pressure ring through a thread, and a strong magnetic sputtering component is installed in the motor drive mechanism, and the strong magnetic sputtering component is located between the pressure ring and the motor drive mechanism.
[0006] Preferably, the strong magnetic sputtering assembly includes a first N-type permanent magnet, which is fixedly mounted on the upper end of the target material, two groups of second N-type permanent magnets are mounted on the upper side of the target material, the two groups of second N-type permanent magnets are located on the inner wall of the first N-type permanent magnet, and four groups of S-type permanent magnets are arranged on the upper side of the target material.
[0007] Preferably, two groups of the second N-type permanent magnets are crossed to form a cross shape, and the two groups of the second N-type permanent magnets are connected to the inner wall of the first N-type permanent magnet to form four groups of quarter circles.
[0008] Preferably, the four groups of S-shaped permanent magnets are all installed in an inclined state, the four groups of S-shaped permanent magnets are located within four groups of quarter circles, and the four groups of S-shaped permanent magnets are equidistantly arranged.
[0009] Preferably, the outer wall diameter of the first N-type permanent magnet is the same as the outer wall diameter of the target material, and the outer wall of the first N-type permanent magnet is kept flush with the outer wall of the target material.
[0010] Compared with the prior art, the utility model has the following beneficial effects: the utility model drives the first N-type permanent magnet, two groups of second N-type permanent magnets and four groups of S-type permanent magnets on the target material to rotate through a motor drive mechanism, and the magnetic field on the target surface rotates slowly. The rotation of the first N-type permanent magnet, two groups of second N-type permanent magnets and four groups of S-type permanent magnets produces four groups of sputtering rings rotating on the target surface, thereby improving the utilization rate of the nickel target material, so that the sputtering rate and sputtering uniformity of the magnetic field enhanced sputtering cathode are equivalent to those of the conventional structure magnetic field enhanced sputtering cathode. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0012] Figure 1 It is a schematic diagram of the structure of the utility model;
[0013] Figure 2 This is a schematic diagram of the structure of the utility model;
[0014] Figure 3 It is a schematic top view of the structure of the target material in the utility model.
[0015] In the figure: 1. Motor drive mechanism; 2. Pressure ring; 3. Insulation ring; 4. Target material; 5. First N-type permanent magnet; 6. Second N-type permanent magnet; 7. S-type permanent magnet. DETAILED DESCRIPTION
[0016] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0017] See also Figure 1-3 , the utility model provides an embodiment: a strong magnetic sputtering cathode with high target material utilization rate, comprising a motor drive mechanism 1 and a target material 4, the target material 4 is installed in the motor drive mechanism 1;
[0018] A pressure ring 2 is installed in the motor drive mechanism 1, and an insulating ring 3 is installed in the lower end of the pressure ring 2 through a thread. A strong magnetic sputtering component is installed in the motor drive mechanism 1, and the strong magnetic sputtering component is located between the pressure ring 2 and the motor drive mechanism 1. This device installs a target material 4 provided with a strong magnetic sputtering component in the motor drive mechanism 1 through the pressure ring 2 and the insulating ring 3, and drives the strong magnetic sputtering component through the motor drive mechanism 1 to generate four sets of magnetic fields, thereby improving the utilization rate of the target material 4.
[0019] Preferably, the strong magnetic sputtering assembly includes a first N-type permanent magnet 5, which is fixedly mounted on the upper end of a target material 4, two groups of second N-type permanent magnets 6 are mounted on the upper side of the target material 4, the two groups of second N-type permanent magnets 6 are located on the inner wall of the first N-type permanent magnet 5, and four groups of S-type permanent magnets 7 are arranged on the upper side of the target material 4. This structure generates four groups of sputtering rings by driving the first N-type permanent magnet 5, two groups of second N-type permanent magnets 6 and four groups of S-type permanent magnets 7 to rotate, generating magnetic lines of force that pass through the target material 4 to generate a magnetic field.
[0020] Preferably, the two groups of second N-type permanent magnets 6 are crossed in a cross shape, and the two groups of second N-type permanent magnets 6 are connected to the inner wall of the first N-type permanent magnet 5 to form four groups of quarter circles. This structure and the connection shape of the two groups of second N-type permanent magnets 6 and the first N-type permanent magnet 5 enable the two groups of second N-type permanent magnets 6 to divide the inside of the first N-type permanent magnet 5 into four groups of quarter circles, thereby being able to divide the surface of the target material 4 into four parts for synchronous use, thereby improving the synchronous utilization of the target material 4.
[0021] Preferably, the groups of S-type permanent magnets 7 are all installed in an inclined shape, the four groups of S-type permanent magnets 7 are within four quarter circles, and the four groups of S-type permanent magnets 7 are equidistantly arranged. This structure is based on the installation positions of the four groups of S-type permanent magnets 7, so that the four groups of S-type permanent magnets 7 are within the four quarter circles divided by the first N-type permanent magnet 5 and the two groups of second N-type permanent magnets 6, thereby generating four groups of magnetic fields and sputtering rings synchronously on the surface of the target material 4.
[0022] Preferably, the outer wall diameter of the first N-type permanent magnet 5 is the same as the outer wall diameter of the target material 4, and the outer wall of the first N-type permanent magnet 5 remains flush with the outer wall of the target material 4. This structure can maximize the use of the surface of the target material 4 through the first N-type permanent magnet 5 according to the size of the first N-type permanent magnet 5 and the target material 4, and avoid the first N-type permanent magnet 5 being unable to connect with the target material 4.
[0023] Working principle: When using target material 4, Figure 2 and Figure 3 As shown, the target material 4, the first N-type permanent magnet 5, the two groups of second N-type permanent magnets 6, and the four groups of S-type permanent magnets 7 are installed in the motor drive mechanism 1 through the pressure ring 2 and the insulating ring 3. The motor drive mechanism 1 drives the first N-type permanent magnet 5, the two groups of second N-type permanent magnets 6, and the four groups of S-type permanent magnets 7 to rotate on the surface of the target material 4. The first N-type permanent magnet 5, the two groups of second N-type permanent magnets 6, and the four groups of S-type permanent magnets 7 rotate at a speed of one to two revolutions per minute. The magnetic lines of force generated by the four groups of S-shaped permanent magnets 7 pass through the sputtering target 4, forming a magnetic field above the target 4, introducing argon gas, and electrifying the target 4. Under the combined action of the magnetic field and the electric field, the argon gas is ionized to generate plasma, wherein the argon ions are accelerated to fly toward the target 4 under the action of the electric field, and finally bombard the target 4, bombarding the atoms of the target 4 out, and the material atoms that fly to the surface of the substrate are deposited into a film on the surface of the substrate. During this deposition process, the surface of the target 4 is continuously etched to form a sputtering ring. The above is the entire working principle of the utility model.
[0024] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be regarded as exemplary and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present invention. Any reference numeral in a claim should not be regarded as limiting the claim to which it relates.
Claims
1. A strong magnetic sputtering cathode with high target material utilization rate, comprising a motor drive mechanism (1) and a target material (4), wherein the target material (4) is installed in the motor drive mechanism (1); Features: A pressure ring (2) is installed in the motor drive mechanism (1), an insulating ring (3) is installed in the lower end of the pressure ring (2) via a thread, and a strong magnetic sputtering component is installed in the target material (4), and the strong magnetic sputtering component is located between the pressure ring (2) and the motor drive mechanism (1).
2. The high-magnetic sputtering cathode with high target utilization rate according to claim 1, characterized in that: The strong magnetic sputtering assembly comprises a first N-type permanent magnet (5), the first N-type permanent magnet (5) is fixedly mounted on the upper end of a target material (4), two groups of second N-type permanent magnets (6) are mounted on the upper side of the target material (4), the two groups of second N-type permanent magnets (6) are located on the inner wall of the first N-type permanent magnet (5), and four groups of S-type permanent magnets (7) are arranged on the upper side of the target material (4).
3. The strong magnetic sputtering cathode with high target utilization rate according to claim 2, characterized in that: The two groups of the second N-type permanent magnets (6) are crossed to form a cross shape, and the two groups of the second N-type permanent magnets (6) are connected to the inner wall of the first N-type permanent magnet (5) to form four groups of quarter circles.
4. The strong magnetic sputtering cathode with high target utilization rate according to claim 2, characterized in that: The four groups of S-shaped permanent magnets (7) are all installed in an inclined shape, the four groups of S-shaped permanent magnets (7) are located within four groups of quarter circles, and the four groups of S-shaped permanent magnets (7) are arranged at equal distances.
5. The strong magnetic sputtering cathode with high target utilization rate according to claim 2, characterized in that: The diameter of the outer wall of the first N-type permanent magnet (5) is the same as the diameter of the outer wall of the target material (4), and the outer wall of the first N-type permanent magnet (5) is kept flush with the outer wall of the target material (4).