Process chamber and device of ion implanter and automatic particle monitoring system

Abstract

The utility model provides a process chamber and device of an ion implanter, and an automatic particle monitoring system, an ion implantation source of the ion implanter enters the process chamber according to a preset implantation track, the process chamber is a high-vacuum chamber when an ion implantation process is carried out, and the process chamber is a high-vacuum chamber when the ion implantation process is carried out. The process chamber comprises a wafer bearing table arranged in the implantation track range of the ion implantation source; and a chamber particle monitor; the chamber particle monitor comprises a particle sensing part and a signal processing part, a signal of the particle sensing part is transmitted to the signal processing part; the particle sensing part is arranged outside the implantation track range of the ion implantation source, and the signal processing part is arranged outside the process chamber. According to the technical scheme, the particle concentration in the process chamber can be effectively monitored in real time, the particle concentration in the process chamber can be truly reflected, and the monitoring accuracy is high.

Description

Technical Field

[0001] The utility model relates to the technical field of ion implantation, in particular to a process chamber and device of an ion implantation machine, and an automatic particle monitoring system. Background Art

[0002] During the operation of the ion implantation machine, as time accumulates, the ion source chamber, beam chamber, sealing ring and other components of the ion implantation machine are prone to produce particles. These particles will enter the process reaction chamber of the ion implantation machine through the trajectory of the ion beam, thereby contaminating the process reaction chamber. In addition, these particles can easily fall on the wafer surface during the ion implantation process, thereby affecting the yield of the chips on the wafer.

[0003] At present, the commonly used method for monitoring the particle status in the process reaction chamber of the ion implantation machine is to use optical instruments to perform daily single inspections on the surface of the wafer under inspection. This method can only inspect the particle status of the machine process reaction chamber within a specific frequency range (referring to the last inspection to the current inspection, the industry frequency is usually 24 hours / time), so the timeliness is poor and there is a certain delay.

[0004] Detecting particles on the surface of the wafer cannot truly reflect the particle concentration in the cavity. The monitoring accuracy is relatively poor and cannot guarantee the stability of the actual ion implantation process and the yield of the final chip.

[0005] The existing monitoring methods for the concentration of polluted particles have poor timeliness and require manual operation, which is inefficient. At the same time, the test wafer needs to undergo some corresponding tests, resulting in high monitoring costs. Utility Model Content

[0006] The utility model provides a process chamber and device of an ion implanter, and an automatic particle monitoring system to solve the problems in the prior art of being unable to monitor the concentration of polluted particles in the reaction chamber of the ion implanter in real time and the low efficiency and high cost of conventional monitoring methods.

[0007] In order to solve the above technical problems, the utility model is implemented through the following technical solutions:

[0008] According to a first aspect of the utility model, a process chamber of an ion implanter is provided, wherein an ion implantation source of the ion implanter enters the process chamber according to a preset implantation trajectory, and when performing an ion implantation process, the process chamber is a high vacuum chamber, and the process chamber comprises:

[0009] A wafer carrier stage disposed within an implantation trajectory of an ion implantation source; and

[0010] Chamber particle monitor;

[0011] Wherein, the chamber particle monitor includes: a particle sensing part and a signal processing part; the signal of the particle sensing part is transmitted to the signal processing part; the particle sensing part is arranged outside the injection trajectory range of the ion injection source, and the signal processing part is arranged outside the process chamber.

[0012] Optionally, the particle sensing portion includes a particle collecting chamber, an optical signal transmitter, an optical signal detector, and an optical processing component disposed between the optical signal transmitter and the optical signal detector; the optical signal transmitter, the optical signal detector, and the optical processing component are disposed in the particle collecting chamber; the particle collecting chamber is provided with a sensing window, and the sensing window is communicated with the process chamber;

[0013] When the ion implanter performs ion implantation, the chamber particle monitor can sense the particle status in the process chamber in real time. The setting of the optical processing component can effectively process the optical signal, so that the particle monitoring result is more accurate.

[0014] Optionally, the optical processing component includes a light diverging component and a light gathering component, wherein the light diverging component is arranged near the optical signal transmitter end, and the light gathering component is arranged near the optical signal detector end. The light diverging component can diverge the pulse light emitted by the optical signal transmitter, thereby increasing the sampling area, and can sample and compare other positions through the diverged light beam. In addition, the light focusing component can focus the scattered light beam, thereby avoiding the problem of light intensity reduction caused by light divergence.

[0015] Optionally, the light diverging component is a concave lens, and the light gathering component is a convex lens.

[0016] Optionally, the particle sensing portion is an infrared light particle sensing portion.

[0017] According to a second aspect of the present invention, an ion implantation device is provided, comprising: an ion source unit, a mass analysis unit, an acceleration unit, a beam focusing / deflection unit, and a process chamber as described in any one of the above items, which are connected in sequence.

[0018] According to the third aspect of the utility model, there is provided an automatic particle monitoring system for an ion implanter, wherein the automatic monitoring system is in communication with the ion implantation device as described above, and the automatic particle monitoring system further comprises a data integrator, a defect monitoring classification system and a client; the data integrator is in communication with the signal processing unit, the data integrator is in communication with the defect monitoring classification system, and the client can access the defect monitoring classification system through communication.

[0019] The process chamber and device of the ion implanter and the automatic particle monitoring system provided by the utility model can effectively monitor the polluted particles in the process chamber in real time through the chamber particle monitor, and can reflect the concentration of the polluted particles in the chamber in real time.

[0020] Furthermore, the process chamber and device of the ion implanter and the automatic particle monitoring system provided by the utility model can perform real-time detection of contaminated particles in the process chamber where the wafer is located by setting the particle sensing part outside the injection trajectory range of the ion implantation source, thereby avoiding interference to the monitor caused by the ion implantation source.

[0021] Furthermore, in an optional solution of the present invention, an optical processing component is provided between the optical signal transmitter and the optical signal detector, and the optical processing component can effectively process the optical signal, thereby increasing the range of monitoring the pollution particle detection signal, thereby making the monitoring system more efficient and effective.

[0022] In an optional solution of the present invention, the light processing structure includes a light diverging component and a light focusing component. The light diverging component can diverge the pulse light emitted by the optical signal transmitter, thereby increasing the sampling area, and can sample and compare other positions through the diverged light beam to enhance the detection signal. In addition, the light focusing component can focus the scattered light beam, thereby avoiding errors caused by the weakening of light intensity due to light divergence. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0024] Figure 1 A schematic diagram of a process chamber of an ion implanter according to an embodiment of the present invention;

[0025] Figure 2 A schematic diagram of a particle sensing portion of an ion implanter according to an embodiment of the present invention;

[0026] Figure 3 A schematic diagram of a particle sensing portion of an ion implanter according to a preferred embodiment of the present invention;

[0027] Figure 4 A schematic diagram of an ion implantation device according to an embodiment of the present invention;

[0028] Figure 5A schematic diagram of an automatic particle monitoring system for an ion implanter according to an embodiment of the present invention;

[0029] Figure 6 A schematic diagram of the linear relationship between particle concentration and current according to an embodiment of the present utility model;

[0030] Figure 7 A schematic diagram of a change trend of current during wafer processing according to an embodiment of the utility model;

[0031] Description of reference numerals:

[0032] 101-process chamber;

[0033] 11- wafer carrier;

[0034] 111-wafer;

[0035] 12- particle sensing part;

[0036] 121-particle collection chamber;

[0037] 1211-sensing window;

[0038] 122-optical signal transmitter;

[0039] 123-optical signal detector;

[0040] 124-line,

[0041] 125-Line;

[0042] 126-light emitting parts;

[0043] 127-light focusing member;

[0044] 13-Signal processing unit;

[0045] 21- ion source part;

[0046] 22-Quality Analysis Department;

[0047] 23- Acceleration unit;

[0048] 24- beam focusing / deflection unit;

[0049] 241-focusing prism;

[0050] 242-Neutral beam filter;

[0051] 243-beam scanning system;

[0052] 31-Data Integrator;

[0053] 32-Defect monitoring classification system;

[0054] 33-Client. DETAILED DESCRIPTION

[0055] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0056] In the description of the utility model specification, it is necessary to understand that the orientation or position relationship indicated by the terms "upper part", "lower part", "upper end", "lower end", "lower surface", "upper surface", etc. is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the utility model.

[0057] In the description of the utility model specification, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features.

[0058] In the description of the present invention, "plurality" means multiple, such as two, three, four, etc., unless otherwise clearly and specifically defined.

[0059] In the description of the utility model specification, unless otherwise clearly specified and limited, the term "connection" and other terms should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the utility model can be understood according to specific circumstances.

[0060] The following specific embodiments are used to describe the technical solution of the utility model in detail. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0061] Please refer to Figure 1 ,like Figure 1As shown, in one embodiment of the utility model, a process chamber of an ion implanter is provided, wherein the ion implantation source of the ion implanter enters the process chamber 101 according to a preset implantation trajectory. When the ion implantation process is performed, the process chamber is a high vacuum chamber, and the process chamber comprises: a wafer carrier 11 arranged within the implantation trajectory range of the ion implantation source; and a chamber particle monitor.

[0062] The chamber particle monitor includes: a particle sensing unit 12 and a signal processing unit 13, and the signal of the particle sensing unit 12 is transmitted to the signal processing unit 13. The installation position of the particle sensing unit 12 avoids the injection trajectory range of the ion injection source, and performs real-time detection of the contaminated particles in the process chamber 101 where the wafer 111 is located, avoiding interference with the monitor caused by the ion injection source. The signal processing unit 13 is arranged outside the process chamber 101. The signal processing unit 13 is used to process the signal of the particle sensing unit to obtain the particle concentration at the position sensed by the particle sensing unit.

[0063] Specifically, the ion implantation source implantation trajectory of the ion implantation machine is as follows: Figure 4 As shown, the ion source unit 21 releases the ion implantation source 211, and the ion implantation source 211 passes through the mass analysis unit 22, the acceleration unit 23, and the beam focusing / deflection unit 24, and finally enters the process chamber 101, and the ion implantation source is implanted into the wafer 111 on the wafer carrier 11. Preferably, the ion implantation source can be an ion beam. The chamber particle monitor is installed inside the process chamber, and its position is not in the forward direction of the injection trajectory of the ion implantation source, and its position does not overlap with the forward direction of the injection trajectory of the ion implantation source. During this process, the particle sensing unit 12 in the chamber particle monitor monitors the particles in the process chamber 101 in real time, and transmits the optical signal changes to the signal processing unit 13, and the signal processor 13 processes the optical signal. During the ion implantation process, real-time monitoring of the particle situation in the process chamber is achieved, and at the same time, the ion implantation source is not affected.

[0064] It should be noted that since the process chamber is a high vacuum chamber when performing the ion implantation process, there will not be much difference in the particle concentration at different positions in the process chamber. The particle concentration sensed by the particle sensing unit at its setting position can reflect the particle concentration in the process chamber in real time.

[0065] Please refer to Figure 2In one embodiment of the utility model, the particle sensing unit 12 includes a particle collecting chamber 121, an optical signal transmitter 122, and an optical signal detector 123. The optical signal transmitter 122 and the optical signal detector 123 are arranged in the particle collecting chamber 121; the particle collecting chamber 121 is provided with a sensing window 1211, and the sensing window 1211 is connected to the process chamber. The particle state in the particle collecting chamber can truly reflect the particle state in the process chamber. When the ion implanter performs ion implantation, the chamber particle monitor can sense the particle state in the process chamber in real time.

[0066] The principle of particle concentration monitoring based on optical signals is as follows: in an unobstructed situation (i.e. when there are no particles in the particle collection chamber), the light emitted by the optical signal transmitter can be completely received by the optical signal detector; but when particles pass through the particle collection chamber, the light emitted by the optical signal transmitter is partially blocked, and the light received by the optical signal detector will change. When the particle concentration is different, the optical signal received by the optical signal detector will also change accordingly, and a corresponding electrical signal will be generated after being processed by the signal processing unit. According to the real-time changes of the electrical signal, the particle concentration in the particle collection chamber can be reflected in real time. Since the particle collection chamber is connected to the process chamber, the particle concentration in the process chamber can be reflected in real time. Among them, the correspondence between the optical signal and the electrical signal and the processing are all existing technologies in this field, so they will not be elaborated.

[0067] Specifically, the optical signal transmitter 122 and the optical signal detector 123 in the particle sensing unit 12 are electrically connected to the signal processing unit through lines 124 and 125, respectively. The optical signal transmitter 122 transmits an optical signal to the optical signal detector 123. Once the particles in the process chamber 101 block the optical signal, the signal received by the optical signal detector 123 fluctuates, and the electrical signal in the signal processor fluctuates. The electrical signal can be converted into common electrical numerical forms such as current, voltage, resistance, and capacitance, and the change in particle concentration can be further intuitively monitored through the change in numerical value. The electrical signal can also be converted into other related forms of expression, and the form of expression of the electrical signal is not limited here.

[0068] Since the particle sizes in the process chamber are different, when small-sized particles block the light signal, there is a certain error when the light signal output from the particle sensing unit to the signal processor is converted into an electrical signal. In order to obtain a more accurate electrical signal, in one embodiment, the particle sensing unit also includes: an optical processing component disposed between the optical signal transmitter and the optical signal detector, and the optical processing component is also disposed in the particle collection chamber. Through the provision of the optical processing component, the optical signal can be effectively processed, so that the range of the contaminated particle detection signal becomes larger, more efficient and effective.

[0069] Specifically, Figure 3As shown, the optical processing component may include: a light diverging member 126 and a light gathering member 127; the light diverging member 126 is arranged near the optical signal transmitter end, and the light gathering member 127 is arranged near the optical signal detector end, please refer to Figure 3 The light diverging element 126 can diverge the pulse light emitted by the optical signal transmitter, thereby increasing the sampling area, and further sampling and comparing other positions through the diverging light beam sampling to enhance the detection signal. The light focusing element 127 can focus the scattered light beam, thereby avoiding errors caused by the weakening of light intensity due to light divergence.

[0070] As an embodiment, the light diverging member can be a concave lens, and the light focusing member can be a convex lens. Of course, it should be appreciated that the present invention is not limited to this, and any component that can diverge a light beam can be used as the light diverging member of the present invention, and any component that can focus a light beam can be used as the light focusing member of the present invention.

[0071] As a specific implementation, the infrared light particle sensing part can be an infrared light sensor. An infrared light beam is used to align the detection position to emit an infrared light beam that can detect polluted particles, and the receiving end can receive the infrared light beam. The structure of the infrared photoelectric switch provided in the infrared light particle sensing part is provided with a transmitting plate and an optical fiber, which is relatively sensitive and reliable to polluted particles. Of course, the utility model is not limited to this, and other types of infrared light particle sensing parts are also within the protection scope of the utility model.

[0072] Please refer to Figure 4 In one embodiment of the present invention, an ion implantation device is also provided, which includes: an ion source unit 21, a mass analysis unit 22, an acceleration unit 23, a beam focusing / deflection unit 24, and a process chamber 101 as described in any of the above embodiments, which are sequentially connected. The ion implantation source 211 generated by the ion source unit 21 passes through the mass analysis unit 22, the acceleration unit 23, and the beam focusing / deflection unit 24 in sequence according to a preset implantation trajectory and enters the process chamber 101.

[0073] As an implementation manner, the beam focusing / deflecting unit 24 may include: a focusing quadrangular prism 241 , a neutral beam filter 242 , and a beam scanning system 243 , which are sequentially distributed.

[0074] In one embodiment, an automatic particle monitoring system for an ion implanter is also provided, and the automatic monitoring system is in communication with the ion implantation device described in the above embodiment. The automatic particle monitoring system also includes a data integrator 31, a defect monitoring classification system 32 and a client 33, please refer to Figure 5. The data integrator 31 is in communication with the signal processing unit 13, and the data integrator 31 is in communication with the defect monitoring classification system 32, and the client 33 can communicate and access the defect monitoring classification system 32. The data integrator 31 is used to receive the signal output by the signal processing unit 13 in real time, and can record the particle concentration in real time; the defect monitoring classification system is used to receive the particle concentration output by the data integrator 31 in real time, and perform fault monitoring classification according to the particle concentration; the client 33 can obtain the fault monitoring classification results of the defect monitoring classification system in real time to handle the fault in time, and can classify the fault according to the particle concentration. Different treatment measures can be taken for different classifications, such as: cleaning parts, cleaning chambers, replacing parts, etc.

[0075] As an implementation method, the defect monitoring and classification system 32 can collect machine parameters in real time, perform data analysis, and monitor classification. Specifically, the defect monitoring and classification system 32 can establish a mathematical conversion formula between particle concentration and electrical signal. Preferably, the electrical signal can be converted into current, and a linear relationship between particle concentration and current can be established. Figure 6 As shown in FIG. 1 , when the particle concentration is higher, the output current value of the infrared photoelectric sensor is higher. In addition, the defect monitoring classification system 32 can also only analyze the current and preset the current standard range, such as Figure 7 As shown in the figure, I represents the current value, UCL represents the upper control limit, CL represents the center line of the control value, and LCL represents the lower control limit. Figure 7 In the example, when the 1st to 21st wafers were subjected to ion implantation, the current signals output by the particle sensing unit 12 were all within the control standard range; however, when the 22nd wafer was subjected to the process, the current exceeded the control standard range. At this time, it was determined that the particle concentration in the process chamber of the ion implanter was too high. The client 33 can obtain the fault monitoring results in real time and shut down the ion implanter for inspection. The particle sensing unit 12 outputs an electrical signal, which is recorded in real time by the data integrator 31. The defect monitoring and classification system 32 performs data analysis and monitoring classification. Through numerical analysis of the current, the particle concentration in the process chamber can be systematically monitored in real time.

[0076] In summary, the utility model provides a process chamber and device of an ion implanter, and an automatic particle monitoring system. The particles in the process chamber can be effectively monitored in real time through the chamber particle monitor, and the detected particle contamination data can be automatically processed; the contaminated particles in the process chamber of the ion implanter can be monitored in real time and efficiently without monitoring the wafer, thereby reducing the overall monitoring cost.

[0077] In the description of this specification, the description with reference to the terms "an implementation", "an example", "a specific implementation process", "an example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0078] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the utility model, rather than to limit it. Although the utility model has been described in detail with reference to the aforementioned embodiments, ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the utility model.

Claims

1. A process chamber of an ion implanter, wherein an ion implantation source of the ion implanter enters the process chamber according to a preset implantation trajectory, characterized in that: When performing the ion implantation process, the process chamber is a high vacuum chamber, and the process chamber includes: A wafer carrier stage disposed within an implantation trajectory of an ion implantation source; and Chamber particle monitor; Wherein, the chamber particle monitor includes: a particle sensing part and a signal processing part; the signal of the particle sensing part is transmitted to the signal processing part; the particle sensing part is arranged outside the injection trajectory range of the ion injection source, and the signal processing part is arranged outside the process chamber.

2. The process chamber of the ion implanter according to claim 1, characterized in that: The particle sensing part comprises a particle collecting chamber, an optical signal emitter, an optical signal detector, and an optical processing component disposed between the optical signal emitter and the optical signal detector; the optical signal emitter, the optical signal detector and the optical processing component are disposed in the particle collecting chamber; the particle collecting chamber is provided with a sensing window, and the sensing window is communicated with the process chamber; When the ion implanter performs ion implantation, the chamber particle monitor can sense the particle status in the process chamber in real time.

3. The process chamber of the ion implanter according to claim 2, characterized in that: The light processing component includes a light diverging component and a light collecting component. The light diverging component is disposed near the light signal transmitter end, and the light collecting component is disposed near the light signal detector end.

4. The process chamber of the ion implanter according to claim 3, characterized in that: The light diverging component is a concave lens, and the light gathering component is a convex lens.

5. The process chamber of the ion implanter according to claim 1, characterized in that: The particle sensing portion is an infrared light particle sensing portion.

6. An ion implantation device, characterized in that: include: An ion source part, a mass analysis part, an acceleration part, a beam focusing / deflection part connected in sequence, and a process chamber as described in any one of claims 1 to 5.

7. An automatic particle monitoring system for an ion implanter, characterized in that: The automatic monitoring system is in communication with the ion implantation device as described in claim 6, and the particle automatic monitoring system also includes a data integrator, a defect monitoring classification system and a client; the data integrator is in communication with the signal processing unit, the data integrator is in communication with the defect monitoring classification system, and the client can communicate and access the defect monitoring classification system.

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