Impedance matcher, radio frequency assembly and plasma processing equipment

Abstract

The utility model discloses an impedance matcher, a radio frequency assembly and plasma processing equipment. Each impedance matcher comprises an impedance matching network and a control unit, at least one impedance matcher is electrically connected between the radio frequency source and the load end through a radio frequency link, and the impedance matching network is electrically connected with the control unit through a high-speed communication bus, the radio frequency source is electrically connected with the control unit through a high-speed communication bus, and the load end is electrically connected with the control unit through a high-speed communication bus. The impedance matching network, the control unit, the radio frequency source and the load end are provided with industrial Ethernet control automation technology ports and / or gigabit transmit-receive interfaces, so that the high-speed communication bus carries out high-speed signal transmission, and the delay is obviously reduced.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor equipment, and in particular to an impedance matcher, a radio frequency component and a plasma processing device. Background Art

[0002] Semiconductor processes use plasma as a processing environment on a large scale. RF signals, as a common plasma excitation source, are widely used in various semiconductor processing equipment such as coating and etching. In order to achieve the highest RF signal utilization, it is necessary to ensure that the reaction chamber and the RF power supply have the same characteristic impedance. In traditional RF applications, the impedance at both ends of the circuit is often eliminated by inserting a matching network composed of capacitive and inductive elements between the power supply and the load. However, the semiconductor processing process is complex, and the plasma environment changes rapidly and dramatically over time. Traditional matching networks are difficult to maintain efficient RF coupling effects.

[0003] To overcome this problem, the industry has proposed a large number of solutions to optimize the matching effect. At present, there are two mainstream matching solutions: the first is "Auto-Match", the main part of this type of matching network uses two vacuum motor capacitors, which are used to adjust the real and imaginary parts of the impedance matching, and use matching voltage / current sensors to sample the signal amplitude and phase information passing through the matching device RF circuit during the matching process, thereby forming a feedback loop to automatically adjust the matching network to perfect coupling. However, since the adjustment process is highly dependent on the mechanical movement of the motor, the adjustment response speed is slow, making it difficult to effectively apply to increasingly demanding advanced process processing.

[0004] The second type is the "Fixed-Match", the main part of which uses a vacuum motor capacitor and is equipped with an RF power supply with adjustable frequency output. When in use, the motor capacitor is adjusted to a preset value that is suitable for the process requirements. During the recipe execution process, the RF power supply adjusts the output frequency at high speed based on the feedback sampling signal of the voltage / current sensor in the RF loop, so that the real and imaginary parts of the matching network impedance meet the matching requirements between the power supply and the load as much as possible. Thanks to the high-speed characteristics of frequency modulation, fixed matchers can be effectively used in pulse processing environments that require high-speed adjustment, but the lack of adjustment freedom and the limitation of the frequency modulation output range make it difficult to achieve perfect matching and anti-reflection effects in each step of the recipe.

[0005] Moreover, in the current scheme, the voltage / current sensor used for matching device control is often set at the matching device end, which cannot reflect the real-time status of the RF generator in time, resulting in control delays and oscillations. Utility Model Content

[0006] In order to solve at least one of the above problems, the utility model provides an impedance matcher, a radio frequency component and a plasma processing device.

[0007] According to one aspect of the utility model, an impedance matcher is provided, comprising an impedance matching network and a control unit, wherein at least one impedance matcher is electrically connected between a radio frequency source and a load end via a radio frequency link, the impedance matching network and the control unit, the radio frequency source and the control unit, and the load end and the control unit are electrically connected via a high-speed communication bus, and the impedance matching network, the control unit, the radio frequency source and the load end are provided with an industrial Ethernet control automation technology port and / or a gigabit transceiver interface so that the high-speed communication bus can perform high-speed signal transmission.

[0008] Optionally, the impedance matching network includes at least one variable capacitor for adjusting impedance.

[0009] Optionally, the control unit is electrically connected to the RF source and the variable capacitor respectively to regulate the RF source and the variable capacitor.

[0010] Optionally, the control unit includes at least one ARM and / or FPGA-based embedded chip for collecting real-time process information and performing impedance matching.

[0011] Optionally, the control unit is also connected to an Ethernet communication bus, and is connected to the master control unit via the Ethernet communication bus.

[0012] Optionally, the control unit includes a processor, a storage module, a communication module, a sensor input module and an execution output module, and the processor is electrically connected to the storage module, the communication module, the sensor input module and the execution output module respectively.

[0013] Optionally, the processor includes ARM and / or FPGA, which is used to implement data processing and logic algorithm deduction and execution.

[0014] Optionally, the communication module included in at least one of the impedance matchers is integrated with an industrial Ethernet control master station, which is used to build a communication loop based on the impedance matching network, the RF source, the load end and the control unit.

[0015] According to one aspect of the utility model, a radio frequency component is provided, comprising the above-mentioned impedance matcher and a radio frequency source electrically connected to the impedance matcher.

[0016] Optionally, the RF source includes a RF power supply for generating RF; a current / voltage sensor is provided between the RF power supply and the impedance matcher.

[0017] Optionally, the current / voltage sensor has at least two input signals and is provided with a directional coupler, wherein the directional coupler is used to synchronously sample at least one of the signals with the output power of the RF power supply, and at least one of the signals samples the reflected signal with exactly the same sampling clock.

[0018] Optionally, the sampling rate of the current / voltage sensor is above 400 kSa / s.

[0019] Optionally, the current / voltage sensor is also provided with a computing unit and a high-speed communication port, wherein the high-speed communication port is an industrial Ethernet control automation technology port and / or a gigabit transceiver interface, and the computing unit can compare and calculate multiple signals, and then collect and provide radio frequency signal information, and the radio frequency signal information is updated through the high-speed communication port and the impedance matcher at a frequency of at least 500 Hz.

[0020] Optionally, the RF power supply and the current / voltage sensor are packaged in the RF source, so that the current / voltage sensor is not located on one side of the impedance matcher.

[0021] Optionally, the load end includes a reaction chamber, and the reaction chamber is a load terminal of the radio frequency signal.

[0022] Optionally, a working state sensing and collecting device is provided between the impedance matcher and the reaction chamber, and the working state sensing and collecting device is used for collecting working state parameters in the reaction chamber in real time.

[0023] Optionally, the working status sensing and collecting device includes one or more of a current sensor, a voltage sensor, a temperature sensor, a pressure sensor, a stress sensor, an optical sensor (such as an optical fiber sensor), and a chemical sensor (such as a free radical sensor).

[0024] Optionally, there are multiple working status sensing and collecting devices, and the multiple working status sensing and collecting devices are arranged in different areas in the reaction chamber.

[0025] Optionally, the working status sensing and collecting device is provided with an industrial Ethernet control automation technology port and / or a gigabit transceiver interface, and can perform data transmission and update with the impedance matcher at a frequency of at least 500 Hz.

[0026] According to one aspect of the utility model, a plasma processing device is provided, comprising the radio frequency component as described above, and a reaction chamber, wherein the radio frequency component is used to feed radio frequency into the reaction chamber and adjust impedance.

[0027] Optionally, it also includes a data training system, which is used to provide large-capacity storage space and large-scale computing power required for encoding and inferring training data required for machine learning, and the data training system is electrically connected to the control unit via a high-speed bus.

[0028] Optionally, the control unit also includes a machine learning processing unit, and the machine learning processing unit is electrically connected to the processor and the storage module respectively.

[0029] The utility model significantly reduces the delay by adopting high-speed communication ports, such as industrial Ethernet control automation technology and gigabit transmission technology, and is electrically connected to the variable capacitor and the radio frequency source respectively through a control unit. On the basis of controlling the variable capacitor, the frequency power of the radio frequency source can also be synchronously controlled, thereby broadening the impedance adjustment means and adaptation scenarios, so as to facilitate timely regulation in response to complex scenarios, greatly shorten the impedance matching time, and help solve application scenarios where impedance matching cannot be achieved only through variable capacitor adjustment.

[0030] The industrial Ethernet control master is integrated through the communication module to form a communication loop between the impedance matching network, RF source, load end and control unit, without the need to communicate with the host computer in real time and wait for the control instructions of the host computer. Therefore, by combining the high-speed transmission of the industrial Ethernet control automation technology port and the parallel calculation of the FPGA, various sensor data can be transmitted to the FPGA almost without delay, and the parallel calculation of the FPGA rather than the serial calculation can process multiple data information at the same time without calculating the queuing delay, thus significantly reducing the mismatch and oscillation caused by the current impedance control time delay dislocation, and facilitating the timely response of distributed control.

[0031] In addition, the RF power supply and the current / voltage sensor are packaged in the RF source, so that the current / voltage sensor is not on the side of the impedance matcher. Therefore, the real-time signal of the RF power supply collected by the current / voltage sensor is updated with the impedance matcher through the high-speed communication port at a frequency of at least 500 Hz, which significantly reduces the impedance control delay and other problems. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 This is a schematic diagram of the structure of an impedance matcher of the utility model;

[0033] Figure 2 This is a schematic diagram of an impedance matching network structure of the utility model;

[0034] Figure 3 This is a schematic diagram of the structure of a control unit of the utility model;

[0035] Figure 4 This is a schematic diagram of a radio frequency component of the utility model;

[0036] Figure 5 This is another schematic diagram of the structure of an impedance matcher of the utility model;

[0037] Figure 6 This is a schematic diagram of another radio frequency component of the utility model;

[0038] Figure 7 This is a schematic diagram of the structure of another control unit of the utility model. DETAILED DESCRIPTION

[0039] The technical solution of the utility model will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0040] According to one aspect of the utility model, an impedance matching device is provided, such as Figure 1 As shown, the impedance matcher 102 includes an impedance matching network 201 and a control unit 202. It can be understood that the impedance matcher 102 can be one or more, and at least one impedance matcher 102 is electrically connected between the RF source 106 and the load end 107 via the RF link 203 to achieve transmission of RF signals between the RF source 106 and the load end 107.

[0041] The impedance matching network 201 is composed of electronic components, and the matching network includes at least one element that can be adjusted by an external physical quantity to achieve adjustment in the case of impedance mismatch. The adjustment element can be a mechanical adjustment device and / or an electrical adjustment device.

[0042] In some embodiments, the impedance matching network 201 includes a first variable capacitor 211 and a second variable capacitor 212 , and the impedance is adjusted by adjusting the first variable capacitor 211 and / or the second variable capacitor 212 .

[0043] Preferably, the first variable capacitor 211 and the second variable capacitor 212 are arranged in parallel, and one of the variable capacitors is connected in series to the RF feed line, and the other variable capacitor is grounded via the ground terminal 213. Figure 2 shown.

[0044] In some embodiments, the impedance matching network 201 includes at least one variable capacitor, and the variable capacitor is connected to a motor. The variable capacitor is adjusted by the motor to adjust the impedance.

[0045] In particular, the control unit 202 is electrically connected to the RF source 106 and the variable capacitor, respectively. Preferably, the control unit 202 is electrically connected to the first variable capacitor 211, the second variable capacitor 212 and the RF source 106, respectively. A high-speed communication port, such as EtherCAT or a gigabit transceiver, can be used to electrically connect the control unit 202 to the three, and communicate at a high speed at a frequency of at least 500 Hz, thereby significantly reducing the delay. Moreover, relative to the prior art, in which only the control unit is electrically connected to the variable capacitor, and only the impedance is adjusted by adjusting the variable capacitor, the present embodiment is electrically connected to the variable capacitor and the RF source 106, respectively, by the control unit 202. On the basis of controlling the variable capacitor, the frequency power of the RF source can also be synchronously controlled, which broadens the impedance adjustment means and the adaptation scene, so as to facilitate timely regulation in response to complex scenes, so as to greatly shorten the impedance matching time, and to help solve the application scene where the impedance cannot be matched by adjusting the variable capacitor alone.

[0046] The control unit 202 includes at least one embedded chip based on ARM and / or FPGA, in which digital signal processing and logic control algorithms are solidified to collect real-time information of the process and perform optimal impedance matching through corresponding algorithms.

[0047] In some embodiments, the impedance matching network 201 and the control unit 202 are integrated and packaged in a metal housing to facilitate installation and maintenance and reduce interference of the external environment on the matching system during the process.

[0048] In some embodiments, the control unit 202 may also be packaged independently and disposed separately from the impedance matching network 201 to facilitate device maintenance and assembly.

[0049] In some embodiments, the impedance matching network 201 and the control unit 202 , the RF source 106 and the control unit 202 , and the load terminal 107 and the control unit 202 are electrically connected via a high-speed communication bus 204 for high-speed signal transmission.

[0050] Preferably, an industrial Ethernet control automation technology (EtherCAT) port is provided in the impedance matching network 201, the control unit 202, the radio frequency source 106 and the load end 107, and the high-speed communication bus 204 transmits signals through the industrial Ethernet control automation technology port. Thus, the signal can be updated with the impedance matcher 102 through the industrial Ethernet control automation technology high-speed communication protocol at a frequency of at least 500 Hz, which significantly reduces the signal delay and improves the response rate. Due to the real-time variability of the impedance, the mismatch and oscillation problems caused by the delay control caused by the communication time delay are avoided to a certain extent.

[0051] In some embodiments, gigabit transceiver interfaces are provided at the impedance matching network 201 , the control unit 202 , the RF source 106 and the load end 107 to enable the high-speed communication bus 204 to perform high-speed signal transmission, thereby reducing delay, improving response rate and control accuracy.

[0052] In some embodiments, the control unit 202 is further connected to an Ethernet communication bus 205 , and can be connected to a master control unit via the Ethernet communication bus 205 to detect and control key information of the working state of the impedance matcher 102 .

[0053] The internal structure of the control unit 202 is as follows: Figure 3 As shown, it includes a processor 301, a storage module 302, a communication module 303, a sensor input module 304 and an execution output module 305. The processor 301 is electrically connected to the storage module 302, the communication module 303, the sensor input module 304 and the execution output module 305 respectively.

[0054] Processor 301 can be a known ARM (Advanced RISC Machines) and / or FPGA (Field-Programmable Gate Array), which is used to implement data processing and logic algorithm deduction and execution. FPGA can process a large amount of data in parallel to improve the real-time performance of calculations. ARM processors are suitable for running operating systems and executing complex algorithms. In addition, FPGA can be reprogrammed according to needs to adapt to different application scenarios.

[0055] In one embodiment, the processor 301 may be a system-on-chip (SoC) composed of an ARM and an FPGA to optimize system performance, power consumption, and cost.

[0056] The storage module 302 includes volatile and / or non-volatile memory, which is used to provide cache resources required for sampling and calculation process execution during the process, and record operation data, historical logs and other information during the operation of the matcher.

[0057] The communication module 303 is used to support system communication interconnection including Ethernet, EtherCAT, Gigabit transceiver communication and other protocols, and can send control instructions, sampling results, execution information, etc. to the corresponding subsystem or module according to the required information data volume, response time and other characteristics.

[0058] The sensor input module 304 includes an analog-to-digital conversion unit and a digital signal processing unit, which can sample sensor sensing information directly related to the control unit 202 and transmit it to the processor 301 for algorithm processing.

[0059] The execution output module 305 includes a digital-to-analog conversion unit and a digital signal generation unit, and can transmit the system operation instructions obtained by running the matching algorithm in the processor 301 to the actuator directly related to the control unit 202.

[0060] In particular, in some embodiments, the communication module 303 integrates an industrial Ethernet control master station (master) for forming a communication loop between the impedance matcher 102, the RF source 106, the load end 107 and the control unit 202. In the communication loop, the control unit 202 can perform real-time self-regulation of the impedance matcher 102, the RF source 106 and the load end 107 based on the real-time signals of the impedance matcher 102, the RF source 106 and the load end 107, without the need to communicate with the host computer in real time to wait for the control instructions of the host computer. Avoid crosstalk and bandwidth occupation caused by external communication to the control, reduce network delay, improve transmission stability, and optimize calculation and control efficiency. Thus, by combining the high-speed transmission of the Ethernet control automation technology port with the parallel calculation of the FPGA, various sensor data can be transmitted to the FPGA almost without delay, and the parallel calculation of the FPGA rather than the serial calculation can simultaneously process multiple data information without calculating the queuing delay, thereby significantly reducing the mismatch and oscillation caused by the current impedance control time delay dislocation as a whole, and is conducive to the timely response of distributed control.

[0061] According to one aspect of the present invention, a radio frequency component is provided, such as Figure 4 As shown, it includes an impedance matcher 102 and a radio frequency source 106 electrically connected to the impedance matcher 102. The impedance matcher 102 is electrically connected to a load terminal 107 so as to feed the radio frequency generated by the radio frequency source 106 into the load terminal 107 through the impedance matcher 102.

[0062] The RF source 106 includes a RF power supply 101, which covers all operating frequency bands required by current semiconductor processes and supports a variety of energy output modes such as continuous wave and pulse waveforms.

[0063] The load end 107 includes a reaction chamber 103 , and the reaction chamber 103 is a load terminal of the radio frequency signal.

[0064] A current / voltage sensor 104 is provided between the RF power supply 101 and the impedance matcher 102. The current / voltage sensor 104 has at least two input signals and is also provided with a directional coupler, through which at least one of the signals is synchronously sampled with the output power of the RF power supply, and at least one of the signals is sampled with the same sampling clock as the reflected signal. The reflected signal refers to a signal in which part of the signal energy is reflected back to the transmitting end when the RF signal encounters an impedance discontinuity point during transmission.

[0065] In some embodiments, the sampling rate of the current / voltage sensor 104 is above 400 kSa / s.

[0066] In some embodiments, the current / voltage sensor 104 is also provided with a computing unit and a high-speed communication port, and the high-speed communication port is an EtherCAT or a gigabit transceiver port. The computing unit can compare and calculate multiple signals, and then collect and provide RF signal information including but not limited to amplitude, phase, forward / backward propagation characteristics, harmonic composition, etc. The signal is transmitted and updated with the impedance matcher 102 through the high-speed communication port (including but not limited to EtherCAT, gigabit transceiver port) at a frequency of at least 500 Hz.

[0067] The current / voltage sensors currently known for impedance control are generally located on one side of the impedance matcher, and the impedance matching network is controlled by the signal of the RF power supply detected by the current / voltage sensor. This leads to a problem that when the frequency of the RF power supply is high or in a changing state, the signal of the RF power supply detected by the current / voltage sensor cannot be completely synchronized in real time, and there will be a phase difference. Phase conversion is required, which leads to control feedback delay, and there is a phase conversion inaccuracy problem. Although in some schemes, a current / voltage sensor is also set on the RF power supply side, this current / voltage sensor is generally not used for the control of the impedance matching network, but for the self-regulation of the RF power supply. Therefore, there is a problem that the detection signal of the RF power supply received by the impedance matcher is not equal to the real signal of the RF power supply at the time of signal acquisition, which in turn causes the problem of impedance control delay or oscillation.

[0068] Therefore, preferably, the RF power source 101 and the current / voltage sensor 104 are packaged in the RF source 106, and the current / voltage sensor 104 is not located on the side of the impedance matcher 102. With such a configuration, the signal collected by the current / voltage sensor 104 can be synchronized with the RF power source 101 in real time, and there will be no phase difference and delay caused by the data transmission space distance between the collected signal and the real-time signal of the RF power source 101 when the current / voltage sensor 104 is located on the side of the impedance matcher 102. Since the frequency of the RF power source 101 is generally above 13.56 MHz or even 60 MHz, a very small delay will lead to a large phase error, especially when the frequency changes, the phase is difficult to be accurately calibrated in time.

[0069] Therefore, the RF power source 101 and the current / voltage sensor 104 are packaged in the RF source 106, so that the current / voltage sensor 104 is not located on the side of the impedance matcher 102. Therefore, the real-time signal of the RF power source 101 collected by the current / voltage sensor 104 is updated with the impedance matcher 102 through the high-speed communication port at a frequency of at least 500 Hz, which significantly reduces the impedance control delay and other problems.

[0070] In some embodiments, a working state sensing and collecting device 105 is provided between the impedance matcher 102 and the reaction chamber 103. The working state sensing and collecting device 105 is used to collect working state parameters in the reaction chamber 103 in real time. The working state parameters include but are not limited to electrical information, cavity temperature, cavity air pressure, and stress state quantity.

[0071] When the working state sensing and collecting device 105 is arranged at the lower electrode, the electrical information of the lower electrode, such as the current, voltage and its changes, can be collected in real time, and the temperature of the lower electrode and the stress state of the lower electrode can also be collected. When the working state sensing and collecting device 105 is arranged at the shower head, the electrical information of the shower head, such as the current, voltage and its changes, can be collected in real time, and the temperature, air pressure and stress state of the shower head can also be collected. When the working state sensing and collecting device 105 is located in the reaction chamber 103, the discharge state, the temperature in the chamber and the air pressure in the chamber can be collected in real time.

[0072] Therefore, the working state sensing and collecting device 105 is a set of one or more sensors such as current sensors, voltage sensors, temperature sensors, pressure sensors, stress sensors, optical sensors (such as optical fiber sensors), chemical sensors (such as free radical sensors), etc., and one or more sets can be set in different areas of the reaction chamber 103 to collect various parameters in the reaction chamber 103 in real time.

[0073] Preferably, the working status sensing and collecting device 105 is provided with an EtherCAT or Gigabit transceiver port, and can also perform data transmission and update with the impedance matcher 102 at a frequency of at least 500 Hz through a high-speed communication protocol.

[0074] By using the working state sensing and collecting device 105 to collect various parameters in the reaction chamber 103 in real time and feed them back to the control unit 202 in real time, the control unit 202 can not only adjust the impedance based on the current / voltage sensor 104 signal, but also make a comprehensive judgment and adjust the impedance according to various parameters in the reaction chamber 103. Compared with the prior art in which only the RF end signal is used as the basis for impedance adjustment, a more complete impedance matching judgment and regulation can be performed, thereby further shortening the regulation and matching process and reducing the impedance matching delay.

[0075] According to one aspect of the utility model, a plasma processing device is provided, comprising the above-mentioned impedance matcher, a radio frequency component and a reaction chamber, wherein the radio frequency component is used to feed radio frequency into the reaction chamber and adjust impedance to achieve impedance matching.

[0076] In another embodiment, Figures 5 to 7As shown, compared with the previous embodiment, this embodiment adds a data training system 108 to provide the large-capacity storage space and large-scale computing power required for encoding and inferring training data required for machine learning. The software and hardware parts of the system can be any known machine learning solution. The data training system 108 is provided with a high-speed communication port, which is an EtherCAT or gigabit transceiver port. The data training system 108 is electrically connected to the control unit 202 through a high-speed bus 206 to facilitate the transmission of a large amount of training data between the control unit 202 and the data training system 108 and regular inference model updates. The schematic diagram of the RF component is shown in FIG. Figure 6 As shown, the data training system 108 is electrically connected to the impedance matching box 102 .

[0077] In one embodiment, Figure 7 As shown, the control unit 202 also includes a machine learning processing unit 306, which is electrically connected to the processor 301 and the storage module 302 respectively, thereby facilitating the inference of the working status of the device through a machine learning algorithm model.

[0078] The machine learning processing unit 306 can be any known graphics processing unit (GPU) or general-purpose graphics processing unit (GPGPU) and other hardware facilities that can perform machine learning processing operations. It can carry a feedback neural network or a graph network, or any other known machine learning algorithm model, but is not limited to these.

[0079] The utility model adds a control unit composed of an embedded system to the impedance matcher, and collects the sensor sensing signal to the control unit through a high-speed transmission network as an input criterion. Unlike the traditional automatic matcher that uses a simple amplitude / phase sensor, the utility model uses a sensor module that is highly synchronized with the radio frequency signal source, so that more conditions such as the amplitude, phase, forward and backward components, and harmonic information of the electrical information can be obtained through real-time comparison with the output signal of the signal source. Through the above structure, the impedance matcher can analyze the matching situation in real time according to the process of the process, and then select the most appropriate matching conditions to achieve comprehensive coverage of advanced process technology.

[0080] Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.

Claims

1. An impedance matching device, characterized in that: include Impedance matching network and control unit, At least one impedance matcher is electrically connected between the RF source and the load end via a RF link. The impedance matching network and the control unit, the RF source and the control unit, and the load end and the control unit are electrically connected via a high-speed communication bus. The impedance matching network, control unit, radio frequency source and load end are provided with industrial Ethernet control automation technology ports and / or gigabit transceiver interfaces to enable the high-speed communication bus to perform high-speed signal transmission.

2. The impedance matching device according to claim 1, wherein: The impedance matching network includes at least one variable capacitor for adjusting impedance.

3. The impedance matching device according to claim 2, characterized in that: The control unit is electrically connected to the radio frequency source and the variable capacitor respectively to regulate the radio frequency source and the variable capacitor.

4. The impedance matching device according to claim 1, wherein: The control unit includes at least one chip based on ARM and / or FPGA, which is used to collect real-time information of the process and perform impedance matching.

5. The impedance matching device according to claim 1, wherein: The control unit is also connected to an Ethernet communication bus, and is connected to a master control unit via the Ethernet communication bus.

6. The impedance matching device according to claim 1, wherein: The control unit includes a processor, a storage module, a communication module, a sensor input module and an execution output module. The processor is electrically connected to the storage module, the communication module, the sensor input module and the execution output module respectively.

7. The impedance matching device according to claim 6, wherein: The processor includes ARM and / or FPGA, which is used to implement data processing and logic algorithm deduction and execution.

8. The impedance matching device according to claim 6, wherein: The communication module included in at least one of the impedance matchers is integrated with an industrial Ethernet control master station, which is used to build a communication loop based on the impedance matching network, the radio frequency source, the load end and the control unit.

9. A radio frequency component, characterized in that: include An impedance matcher as claimed in any one of claims 1 to 8, and a radio frequency source electrically connected to the impedance matcher.

10. The radio frequency component according to claim 9, characterized in that: The radio frequency source comprises a radio frequency power supply for generating radio frequency; A current / voltage sensor is provided between the radio frequency power supply and the impedance matcher.

11. The radio frequency component according to claim 10, characterized in that: The current / voltage sensor has at least two input signals and is provided with a directional coupler, wherein the directional coupler is used to synchronously sample at least one of the signals with the output power of the RF power supply, and at least one of the signals samples the reflected signal with exactly the same sampling clock.

12. The radio frequency component according to claim 10, characterized in that: The sampling rate of the current / voltage sensor is above 400 kSa / s.

13. The radio frequency component according to claim 10, characterized in that: The current / voltage sensor is also provided with a computing unit and a high-speed communication port. The high-speed communication port includes an Industrial Ethernet control automation technology port and / or a Gigabit transceiver interface, The calculation unit can compare and calculate multiple signals, and then collect and provide radio frequency signal information.

14. The radio frequency component according to claim 10, characterized in that: The radio frequency power source and the current / voltage sensor are packaged in the radio frequency source, so that the current / voltage sensor is not located at one side of the impedance matcher.

15. The radio frequency component according to claim 9, characterized in that: The load end includes a reaction chamber, and the reaction chamber is a load terminal of the radio frequency signal.

16. The radio frequency component according to claim 15, characterized in that: A working state sensing and collecting device is provided between the impedance matcher and the reaction chamber, and the working state sensing and collecting device is used for collecting working state parameters in the reaction chamber in real time.

17. The radio frequency component according to claim 16, characterized in that: The working state sensing and collecting device includes one or more of a current sensor, a voltage sensor, a temperature sensor, a pressure sensor, a stress sensor, an optical sensor, and a chemical sensor.

18. The radio frequency component according to claim 17, characterized in that: There are multiple working status sensing and collecting devices, and the multiple working status sensing and collecting devices are arranged in different areas in the reaction chamber.

19. The radio frequency component according to claim 16, characterized in that: The working status sensing and collecting device is provided with an industrial Ethernet control automation technology port and / or a gigabit transceiver interface.

20. A plasma processing device, characterized in that: It comprises a radio frequency component as described in any one of claims 9 to 19, and a reaction chamber, wherein the radio frequency component is used to feed radio frequency into the reaction chamber and adjust impedance.

21. The plasma processing apparatus according to claim 20, wherein: It also includes a data training system, which is used to provide large-capacity storage space and large-scale computing power required for encoding and inferring training data required for machine learning. The data training system is electrically connected to the control unit via a high-speed bus.

22. The plasma processing apparatus according to claim 21, wherein: The control unit also includes a machine learning processing unit, and the machine learning processing unit is electrically connected to the processor and the storage module respectively.

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