Ion energy monitoring device

Abstract

The utility model discloses a monitoring device, which is arranged between an ion energy accelerating electric field and a process chamber of an ion implantation machine, and is used for monitoring the energy of implanted ions generated by the ion implantation machine before the ion implantation process is carried out on the ion implantation machine. According to the monitoring device, two deflection electric field polar plates of a deflection electric field assembly are used for deflecting an ion beam passing through an ion energy accelerating electric field, and the deflected ion beam is obtained through a beam detection assembly which is away from the deflection electric field polar plates by a second preset distance; according to the utility model, the energy of ions before entering the deflection electric field assembly can be obtained through the deflection distance of the ion beam and the design parameters of the monitoring device, and then the energy of injected ions generated by the ion implantation machine can be directly obtained.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, in particular to a monitoring device for ion energy. Background Art

[0002] Almost all doping processes in modern chip manufacturing are implemented by ion implantation. The ion implantation process is carried out in an ion implanter, so that a pure ion beam is injected into the target silicon wafer. The energy of the injected ions is a key parameter in the ion implantation process. It has an important influence on the distribution of the ions in the wafer after implantation, and also has a direct impact on the electrical properties of the chip. The current ion implanters either use a calibrated magnetic field to perform energy screening and feedback on ion deflection, or directly determine the energy based on the power supply feedback voltage. Both methods do not directly monitor the energy, and cannot detect abnormalities in the calibrated magnetic field or the power supply feedback voltage in a timely manner.

[0003] Therefore, how to directly monitor the energy of the implanted ions generated by the ion implantation machine has become a technical problem that urgently needs to be solved in the industry. Utility Model Content

[0004] The utility model provides an ion energy monitoring device to solve the problem of how to directly monitor the energy of implanted ions generated by an ion implantation machine.

[0005] According to a first aspect of the utility model, an ion energy monitoring device is provided, which is arranged on an ion implantation machine, wherein the ion implantation machine is provided with an ion energy accelerating electric field, and the monitoring device is used to monitor the energy of the implanted ions generated by the ion implantation machine before the ion implantation machine performs an ion implantation process, and the ion energy monitoring device is arranged between the ion energy accelerating electric field and the process chamber, and the ion energy monitoring device comprises:

[0006] A deflection electric field assembly, comprising a first deflection electric field plate and a second deflection electric field plate; a first preset distance is between the first deflection electric field plate and the second deflection electric field plate, and a preset voltage difference can be applied between the two deflection electric field plates to deflect the ion beam after passing through the ion energy acceleration electric field;

[0007] The beam detection component is disposed between the deflection electric field component and the process chamber and is a second preset distance away from the deflection electric field plate to obtain the ion beam deflected by the deflection electric field component.

[0008] Optionally, the beam detection component includes:

[0009] First beam slits, a plurality of first slits with preset spacing are provided, and the first beam slits are at a first preset horizontal distance and a first preset vertical distance relative to the first / second deflection electric field plates;

[0010] The first Faraday cup is placed behind the slit of the first beam slit to obtain the ion beam passing through the first slit.

[0011] Optionally, the beam detection component further includes:

[0012] Second beam slits, a plurality of second slits with preset spacing are provided, and the second beam slits have a second preset horizontal distance and a second preset vertical distance relative to the first / second deflection electric field plates;

[0013] The second Faraday cup is disposed behind the second slit and acquires the ion beam passing through the second slit.

[0014] Optionally, a distance between second slits arranged on the second beam slit is different from a distance between first slits arranged on the first beam slit.

[0015] Optionally, the first preset horizontal distance is greater than the second preset horizontal distance.

[0016] Optionally, the first / second Faraday cup moves parallel to the first / second beam slit direction to receive ions passing through the first / second slit.

[0017] Optionally, a projection of the first / second slit on the first / second beam slit in the direction of the first / second Faraday cup is within the first / second Faraday cup.

[0018] Optionally, the ion implanter is provided with a neutral beam filter, and the monitoring device is arranged between the neutral beam filter and the process chamber.

[0019] Optionally, the ion implanter is provided with a deflection magnetic field, and the monitoring device is arranged between the ion energy acceleration electric field and the deflection magnetic field.

[0020] Compared with the prior art, the technical solution of the embodiment of the utility model has the following beneficial effects:

[0021] In the ion energy monitoring device of the technical solution of the utility model, the monitoring device is arranged between the ion energy acceleration electric field of the ion implantation machine and the process chamber, and is used to monitor the energy of the implanted ions generated by the ion implantation machine before the ion implantation machine performs the ion implantation process. The monitoring device uses two deflection electric field plates of the deflection electric field component to deflect the ion beam after passing through the ion energy acceleration electric field, and obtains the deflected ion beam through a beam detection component at a second preset distance from the deflection electric field plate. The utility model can obtain the energy of the ions before entering the deflection electric field component through the ion beam deflection distance and the design parameters of the monitoring device, and then directly obtain the energy of the implanted ions generated by the ion implantation machine.

[0022] Furthermore, the beam detection component utilizes a first beam slit to acquire the ion beam deflected by the deflection electric field component. The first beam slit is provided with a plurality of first slits with preset spacings. The first beam slit is at a first preset horizontal distance and a first preset vertical distance from the first / second deflection electric field plates. The beam detection component also acquires the ion beam passing through the first slit by placing a first Faraday cup behind the slit of the first beam slit. Thus, the beam detection component can obtain the energy of the ions before entering the deflection electric field component by collecting the position of the first slit of the ion beam.

[0023] Furthermore, the beam detection component may also include a second beam slit, and the first beam slit and the second beam slit may be used to monitor different energy ranges. Thus, the utility model may save machine space and improve monitoring accuracy while expanding the energy monitoring range. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0025] Figure 1 It is a structural schematic diagram of an ion energy monitoring device provided by an embodiment of the utility model;

[0026] Figure 2 It is a structural schematic diagram of an ion energy monitoring device provided by another embodiment of the utility model;

[0027] Figure 3 It is a structural schematic diagram of a beam detection assembly provided by an embodiment of the utility model;

[0028] Figure 4is a structural schematic diagram of a beam detection assembly provided by another embodiment of the utility model;

[0029] Figure 5 It is a structural schematic diagram of a Faraday cup provided by an embodiment of the utility model;

[0030] Figure 6 It is a structural schematic diagram of an ion implantation machine provided by an embodiment of the utility model;

[0031] Figure 7 It is a structural schematic diagram of an ion implantation machine provided by another embodiment of the utility model.

[0032] Description of reference numerals:

[0033] 11-ion energy accelerating electric field;

[0034] 12-process chamber;

[0035] 121- stage;

[0036] 122-wafer;

[0037] 13- ion beam generating unit;

[0038] 131- ion source;

[0039] 132-extraction electrode;

[0040] 133-mass analyzer;

[0041] 14- Focusing component;

[0042] 15-Neutral beam filter;

[0043] 16- beam scanning assembly;

[0044] 17- Third Faraday Cup;

[0045] 18- a first capacitor;

[0046] 19- Magnetic field correction device;

[0047] 21- deflection electric field assembly;

[0048] 211-first deflection electric field plate;

[0049] 212- second deflection electric field plate;

[0050] 22- beam detection component;

[0051] 221-first slit;

[0052] 222-First Faraday Cup;

[0053] 223-Second slit;

[0054] 224-Second Faraday Cup. DETAILED DESCRIPTION

[0055] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0056] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present utility model and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the utility model described here can be implemented in an order other than those illustrated or described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0057] The technical solution of the utility model is described in detail with specific embodiments below. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments.

[0058] Before filing this application, the applicant conducted a thorough study on how current ion implantation machines monitor the energy of implanted ions, and proposed two methods for monitoring the energy of implanted ions:

[0059] 1) Energy screening and feedback of ion deflection through the corrected magnetic field;

[0060] 2) Determine the energy based on the power supply feedback voltage;

[0061] However, both methods do not directly monitor the energy of the injected ions, and therefore cannot detect in time when the correction magnetic field or the power supply feedback voltage is abnormal.

[0062] In order to solve the above problems, an embodiment of the utility model provides an ion energy monitoring device, which is arranged between the ion energy acceleration electric field and the process chamber of the ion implantation machine, and is used to monitor the energy of the injected ions generated by the ion implantation machine before the ion implantation machine performs the ion implantation process. The monitoring device uses two deflection electric field plates of the deflection electric field assembly to deflect the ion beam after passing through the ion energy acceleration electric field, and obtains the deflected ion beam through a beam detection assembly at a second preset distance from the deflection electric field plates. The utility model can obtain the energy of the ions before entering the deflection electric field assembly through the ion beam deflection distance and the design parameters of the monitoring device, and then directly obtain the energy of the injected ions generated by the monitored ion implantation machine.

[0063] The solution of the utility model is specifically described as follows:

[0064] Please refer to Figure 1 According to an embodiment of the present utility model, an ion energy monitoring device is provided, which is arranged on an ion implantation machine, and the ion implantation machine is provided with an ion energy accelerating electric field 11. The monitoring device is used to monitor the energy of the implanted ions generated by the ion implantation machine before the ion implantation machine performs an ion implantation process. The ion energy monitoring device is arranged between the ion energy accelerating electric field 11 and the process chamber 12, and the ion energy monitoring device includes:

[0065] The deflection electric field assembly 21 includes a first deflection electric field plate 211 and a second deflection electric field plate 212; a first preset distance d is between the first deflection electric field plate 211 and the second deflection electric field plate 212, and a preset voltage difference can be applied between the two deflection electric field plates to deflect the ion beam after passing through the ion energy acceleration electric field 11;

[0066] The beam detection component 22 is disposed between the deflection electric field component 21 and the process chamber 12 and is at a second preset distance from the deflection electric field plate to obtain the ion beam deflected by the deflection electric field component 21 .

[0067] Now combined Figure 1 , the principle of how the monitoring device monitors the energy of the implanted ions generated by the ion implantation machine through the distance of ion beam deflection and the design parameters of the monitoring device is explained. It should be understood that, Figure 1 The positions and directions mentioned are relative positions in the schematic diagram and do not represent the actual positions:

[0068] For ease of understanding, we can first The initial velocity v of the ions in the horizontal direction before entering the deflection electric field assembly 21 is obtained:

[0069]

[0070] Wherein, m is the mass of the ion, q is the charge of the ion, and U is the voltage value provided by the ion energy accelerating electric field 11.

[0071] In the monitoring device, the length of the first deflection electric field plate 211, the length of the second deflection electric field plate 212, the first preset distance d and the second preset distance can all be understood as known design parameters. Figure 1 In the example, the length of the first deflection electric field plate 211 is equal to the length of the second deflection electric field plate 212.

[0072] In one embodiment, the first deflection electric field plate 211 is applied with a first voltage U1, and the second deflection electric field plate 212 is applied with a second voltage U2, and the voltage value of the second voltage U2 is greater than the voltage value of the first voltage U1, and the preset voltage difference applied between the two deflection electric field plates is U2-U1;

[0073] In this case, the first movement time t1 of the ions in the deflection electric field assembly 21 can be obtained by combining formula (1):

[0074]

[0075] Wherein, L is the length of the first deflection electric field plate 211 or the length of the second deflection electric field plate 212 .

[0076] Based on the preset voltage difference U2-U1 and the first preset distance d, the vertical acceleration a of the ions in the deflection electric field assembly 21 can be obtained:

[0077]

[0078] Wherein, E is the energy of the ions before entering the deflection electric field assembly 21;

[0079] And the ion beam is Figure 1 In the example of upward deflection, by combining equation (2) and equation (3), the first vertical movement distance d1 of the ions in the vertical direction in the deflection electric field component 21 can be obtained:

[0080]

[0081] In one embodiment, the second preset distance can be understood as the horizontal distance L1 between the beam detection component 22 and the deflection electric field plate. After leaving the deflection electric field component 21, the ions move in a straight line at a uniform speed. In this case, by combining formula (1) and the second preset distance L1, the second movement time t2 of the ions at the second preset distance L1 after leaving the deflection electric field component 21 can be obtained:

[0082]

[0083] Similarly, after the ions leave the deflection electric field assembly 21, by combining equations (2), (3) and (5), it can be obtained that the ions move a second vertical distance D1 in the vertical direction corresponding to the second preset distance L1:

[0084]

[0085] Furthermore, the sum of the first vertical distance and the second vertical distance of the ion moving in the vertical direction is

[0086]

[0087] According to formula (7), the voltage value U provided by the ion energy accelerating electric field 11 can be obtained:

[0088]

[0089] According to formula (8), the energy E of the implanted ions generated by the ion implantation machine can be obtained:

[0090]

[0091] Similar, please refer to Figure 2 , Figure 2 It is also a schematic diagram of the structure of the ion energy monitoring device provided by an embodiment of the utility model. Figure 2 In the example, the voltage value of the second voltage U2 is less than the voltage value of the first voltage U1, and the preset voltage difference applied between the two deflection electric field plates is U1-U2, the energy of the implanted ions generated by the ion implantation machine is

[0092]

[0093] Among them, L2 is Figure 2 The second preset distance in the example;

[0094] d2 is the third vertical movement distance of the ions in the vertical direction in the deflection electric field assembly 21;

[0095] D2 is the fourth vertical distance that the ions move in the vertical direction corresponding to the second preset distance.

[0096] Therefore, in the present invention, when the design parameters of the monitoring device are known, the energy of the ions before entering the deflection electric field assembly 21 can be obtained through the deflection distance of the ion beam in the vertical distance, so as to monitor the real energy of the ions.

[0097] In other embodiments, the second preset distance includes the first preset horizontal distance and the first preset vertical distance, and the second movement time at the second preset distance can be understood as: the second movement time at the first preset horizontal distance L1;

[0098] In this case, one implementation method is to refer to Figure 3 , the beam detection component 22 includes:

[0099] First beam slits, a plurality of first slits 221 with preset spacing are provided, and the first beam slits are at a first preset horizontal distance and a first preset vertical distance relative to the first / second deflection electric field plates;

[0100] The first Faraday cup 222 is placed behind the slit 221 of the first beam slit to obtain the ion beam passing through the first slit 221 .

[0101] Among them, Figure 3 In this example, the first preset horizontal distance can be understood as the second preset distance L1 in equation (9). Figure 3 The above-mentioned first preset vertical distance can also be understood as the vertical distance between the position where the ion beam enters the deflection electric field assembly 21 and the position where the ion beam enters the first / second beam slit (i.e., d1+D1 in formula (9)).

[0102] Of course, the present invention does not limit the position where the ion beam enters the deflection electric field assembly 21, and those skilled in the art can set the positions of the first deflection electric field plate 211 and the second deflection electric field plate 212 as needed. The beam detection assembly 22 of the present invention can obtain the vertical distance of ion deviation (i.e., d1+D1 in formula (9)) by collecting the position of the first slit 221 of the ion beam and the position where the ion beam enters the deflection electric field assembly 21, and then obtain the energy of the ion before entering the deflection electric field assembly 21, without having to measure the first vertical distance d1 and the second vertical distance D1 of the ion movement in the vertical direction respectively.

[0103] It can be known from formula (9) or formula (10) that the distance L1 / L2 between the deflection electric field component and the beam detection component will affect the monitorable ion energy range. However, in actual use, the distance L1 / L2 between the deflection electric field component and the beam detection component will also affect the accuracy. This is because there is repulsion between like charges between ions. When the horizontal movement distance of the ions is too long, the beam density of the ion beam decreases and the beam cross-section becomes larger, which affects the monitoring of the beam by the beam detection component 22. That is, it is easy for the beam detection component 22 to monitor the beam at multiple slits at the same preset voltage difference, which affects the accuracy of energy monitoring. Moreover, if the distance L1 / L2 is too large, it will also affect the space of the ion implanter occupied by the ion energy detection device.

[0104] For some machines with a wide range of application energies, in one implementation, in order to monitor the ion implantation energies of different energy ranges of the ion implanter, while ensuring that the detection accuracy meets the requirements and the space occupied by the ion implanter is minimized, another implementation example is provided for illustration. Figure 4 , the beam detection component 22 also includes:

[0105] Second beam slits, a plurality of second slits 223 with preset spacing are provided, and the second beam slits have a second preset horizontal distance and a second preset vertical distance relative to the first / second deflection electric field plates;

[0106] The second Faraday cup 224 is disposed behind the second slit 223 to obtain the ion beam passing through the second slit 223 .

[0107] Among them, the second preset horizontal distance and the second preset vertical distance of the second beam slit relative to the first / second deflection electric field plate can be understood as the second preset horizontal distance L2 of the second beam slit relative to the first deflection electric field plate 211 or the second deflection electric field plate 212.

[0108] exist Figure 4 In the example, the second preset vertical distance mentioned above can be understood as the vertical distance between the position where the ion beam enters the deflection electric field assembly 21 and the position where the ion beam enters the first / second beam slit (ie, d2+D2 in formula (10)).

[0109] In order to enable the first beam slit and the second beam slit to monitor ions in different energy ranges respectively, in a specific implementation manner, please refer to Figure 4, and the first preset horizontal distance L1 can also be made greater than the second preset horizontal distance L2, so that the first beam slit can monitor ions in a higher energy range and the second beam slit can monitor ions in a lower energy range.

[0110] In another embodiment, in order to achieve monitoring of different energy ranges and different monitoring accuracies, the distance between the second slits 223 provided on the second beam slit can be different from the distance between the first slits 221 provided on the first beam slit. Similarly, the first beam slit and the second beam slit can monitor ions in different energy ranges respectively.

[0111] Therefore, the beam detection component 22 can improve the monitoring accuracy and expand the energy monitoring range.

[0112] In practical applications, in order to save machine space, the vertical movement distance of ions in the deflection electric field component and the second preset distance must be reduced as much as possible. In this case, the beam detection component 22 can further save machine space.

[0113] To avoid the Faraday cup from significantly increasing the size of the machine, please refer to Figure 4 In one embodiment, the first Faraday cup 222 or the second Faraday cup 224 is a movable Faraday cup, and the first Faraday cup 222 / the second Faraday cup 224 moves parallel to the first / second beam slit direction to receive ions passing through the first slit 221 / the second slit 223.

[0114] In other embodiments, please refer to Figure 5 The first Faraday cup 222 or the second Faraday cup 224 can cover the plurality of first slits 221 or the plurality of second slits 223, and the projection of the first slit 221 / second slit 223 on the first / second beam slit in the direction of the first Faraday cup 222 / second Faraday cup 224 is within the first Faraday cup 222 / second Faraday cup 224.

[0115] In a preferred embodiment, the monitoring device further adjusts the preset voltage difference so that the ion beam whose actual energy satisfies the preset energy can have a preset deflection path, and the position of the ion beam with the largest beam current received by the Faraday cup can be used to obtain the actual energy of the implanted ions generated by the ion implantation machine;

[0116] In this case, one implementation method is to refer to Figure 6 or Figure 7The monitoring device may also set the placement of the first beam slit and / or the second beam slit according to the preset deflection path.

[0117] In practical application, the monitoring device of the utility model can be used after the ion implantation machine performs beam adjustment or after a specific number of wafers have been processed;

[0118] In a specific implementation, the monitoring device applies the preset voltage difference between the two deflection electric field plates only during monitoring, and stops applying voltage to the two deflection electric field plates after monitoring is completed, so as not to affect normal ion implantation.

[0119] However, depending on the type of ion implantation machine, the structure of the ion implantation machine will also be different, and the corresponding location of the monitoring device will also be different.

[0120] In one embodiment, when the ion implanter is provided with a neutral beam filter, the monitoring device is disposed between the neutral beam filter and the process chamber 12 .

[0121] As an example, see Figure 6 , Figure 6 An ion implantation machine capable of providing an implantation energy of less than 60 keV is shown;

[0122] exist Figure 6 In the example of , the ion implantation machine comprises:

[0123] The ion beam generating unit 13 is configured to output a first ion beam to be measured;

[0124] The ion energy accelerating electric field 11 is configured to accelerate the first ion beam to be measured and output a second ion beam to be measured;

[0125] A focusing assembly 14 is configured to perform a focusing process on the second ion beam to be measured and output a third ion beam to be measured;

[0126] A neutral beam filter 15 is configured to filter the third ion beam to be measured and output a fourth ion beam to be measured;

[0127] The beam scanning component 16 is located between the focusing component 14 and the deflection electric field component 21, and is configured to scan and modulate the fourth ion beam to be measured when the deflection electric field component 21 is not working, and output the ion beam to be injected;

[0128] The process chamber 12 is configured to obtain an ion beam to be implanted.

[0129] As an example, see Figure 6, the ion beam generating unit 13 comprises:

[0130] An ion source 131, for generating ions;

[0131] An extraction electrode 132, used to extract an initial ion beam from ions generated by the ion source;

[0132] The mass analyzer 133 is used to perform separation and selection processing on the initial ion beam and output the first ion beam to be measured.

[0133] exist Figure 6 In the example, the fourth ion beam to be measured can be understood as the ion beam after the ion energy acceleration electric field 11 mentioned above, and the ion beam to be injected can be transmitted to the process chamber 12 in a straight line, so the monitoring device can be designed to be close to the process chamber 12.

[0134] In a preferred embodiment, please refer to Figure 6 The beam detection component 22 may also be disposed in the process chamber 12 .

[0135] In one implementation, please refer to Figure 6 The process chamber 12 includes a stage 121 , on which a wafer 122 can be placed.

[0136] In a preferred embodiment, it is also necessary to monitor the dose of ions implanted into the wafer 122. Figure 6 In this case, a third Faraday cup 17 may be provided behind the stage 121, and the third Faraday cup 17 may be connected in parallel with the first capacitor 18. Therefore, the utility model can also monitor the dose of ion implantation of the wafer 122 using the ion dose collected by the third Faraday cup 17, and the specific monitoring method is the prior art, which will not be described in detail in the utility model.

[0137] In another embodiment, when the ion implanter is provided with a deflection magnetic field, the monitoring device is arranged between the ion energy acceleration electric field 11 and the deflection magnetic field.

[0138] As an example, see Figure 7 , Figure 7 An ion implantation machine capable of providing an implantation energy of less than 1500 keV is shown.

[0139] exist Figure 7 In the example of , the ion implantation machine comprises:

[0140] The ion beam generating unit 13 is configured to output a first ion beam to be measured;

[0141] The ion energy accelerating electric field 11 is configured to accelerate the first ion beam to be measured and output a second ion beam to be measured;

[0142] A focusing assembly 14 is configured to perform a focusing process on the second ion beam to be measured and output a third ion beam to be measured;

[0143] The beam scanning component 16 is located between the focusing component 14 and the deflection electric field component 21, and is configured to scan and modulate the third ion beam to be measured when the deflection electric field component 21 is not working, and output the ion beam to be injected;

[0144] The correction magnetic field device 19 is located between the deflection electric field assembly 21 and the process chamber 12, and is configured to apply the deflection magnetic field to the ion beam to be implanted, so that the ion beam to be implanted is deflected and a second deflected ion beam is output.

[0145] The process chamber 12 is configured to obtain the second deflected ion beam.

[0146] Among them, the ion implantation machine is also configured as follows: only when the actual energy of the implanted ions generated by the ion implantation machine meets the preset energy allowable range, the beam scanning component 16 and the correction magnetic field device 19 can operate normally to continue adjusting the beam and complete the preparation process of the ion implantation process; otherwise, the machine needs to be stopped for inspection.

[0147] exist Figure 7 In the example, the third ion beam to be measured can be understood as the above-mentioned ion beam after passing through the ion energy acceleration electric field 11, and the ion beam to be injected can be transmitted to the process chamber 12 after magnetic deflection. In order to avoid the influence of the magnetic field of the correction magnetic field device 19 on the monitoring device, the monitoring device should be arranged before the correction magnetic field device 19, and in this case, the beam detection component 22 should not be arranged in the process chamber 12.

[0148] Now Figure 7 Take the working mode of the monitoring device provided by the utility model as an example to describe:

[0149] After the ion implantation machine makes a preliminary adjustment to the parameters of the beam scanning assembly 16, voltages are applied to the first deflection electric field plate 211 and the second deflection electric field plate 212 respectively. When the voltage of the first deflection electric field plate 211 is greater than the voltage of the second deflection electric field plate 212, the second Faraday cup 224 is used to monitor the beam to measure the intensity of the beam at different positions until a combination of electrode voltage and Faraday cup position is found so that the beam intensity of the ion beam measured by the second Faraday cup 224 is maximized. The actual energy of the current beam is obtained by the position of the second Faraday cup 224 corresponding to the beam intensity.

[0150] After obtaining the actual energy, the ion implantation machine is also used to determine whether the actual energy is within the allowable range of the set energy. Only when the actual energy is within the allowable range of the set energy, the voltage applied to the first deflection electric field plate 211 and the second deflection electric field plate 212 is stopped, and the beam scanning component 16 and the correction magnetic field device 19 work normally to continue adjusting the beam and complete the preparation process of the ion implantation process. After the beam adjustment is completed and the detected beam meets the set requirements, the ion implantation process is started; otherwise, the machine needs to be stopped for inspection.

[0151] In a preferred embodiment, the monitoring device parameters also need to be matched according to the energy range actually applied by the machine;

[0152] Taking three ion implantation machines with different energy ranges as examples, the value ranges of the above parameters are explained:

[0153] If the energy range of the ion implantation machine is: the energy of the particle implanted with 1 unit charge is less than 60 keV;

[0154] In this case, the length L of the first deflection electric field plate 211 or the length L of the second deflection electric field plate 212 is in the range of 0.1 m to 2 m;

[0155] The first preset distance d ranges from 0.05 to 1 m;

[0156] The second preset distance ranges from 0.05 to 0.4 m.

[0157] If the energy range of the ion implantation machine is: the energy of the particle implanted with 1 unit charge is less than 300 keV;

[0158] In this case, the length L of the first deflection electric field plate 211 or the length L of the second deflection electric field plate 212 is in the range of 0.1 m to 1 m;

[0159] The first preset distance d ranges from 0.05m to 0.8m;

[0160] The second preset distance ranges from 0.05m to 0.7m.

[0161] If the energy range of the ion implantation machine is: the energy of the particle implanted with 1 unit charge is less than 1500 keV;

[0162] In this case, the length L of the first deflection electric field plate 211 or the length L of the second deflection electric field plate 212 is in the range of 0.1 m to 2 m;

[0163] The first preset distance d ranges from 0.05m to 0.8m;

[0164] The second preset distance ranges from 0.05m to 1m.

[0165] Of course, the above parameter ranges are only examples, and the present invention is not limited thereto. Machines with other energy ranges can use the above similar energy values ​​as references. It should be understood that the actual values ​​of the parameters should be based on the energy calculation values.

[0166] To summarize, the embodiments of the present invention utilize the two deflection electric field plates of the deflection electric field assembly to deflect the ion beam after passing through the ion energy acceleration electric field, and obtain the deflected ion beam through a beam detection assembly at a second preset distance from the deflection electric field plates. The present invention can obtain the energy of the ions before entering the deflection electric field assembly through the deflection distance of the ion beam and the design parameters of the monitoring device, and then directly obtain the energy of the injected ions generated by the monitored ion implantation machine.

[0167] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the utility model, rather than to limit it. Although the utility model has been described in detail with reference to the aforementioned embodiments, ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the utility model.

Claims

1. An ion energy monitoring device is arranged on an ion implantation machine, wherein the ion implantation machine is provided with an ion energy accelerating electric field, and the monitoring device is used to monitor the energy of the implanted ions generated by the ion implantation machine before the ion implantation machine performs an ion implantation process, characterized in that: The ion energy monitoring device is arranged between the ion energy accelerating electric field and the process chamber, and the ion energy monitoring device comprises: A deflection electric field assembly, comprising a first deflection electric field plate and a second deflection electric field plate; a first preset distance is between the first deflection electric field plate and the second deflection electric field plate, and a preset voltage difference can be applied between the two deflection electric field plates to deflect the ion beam after passing through the ion energy acceleration electric field; The beam detection component is disposed between the deflection electric field component and the process chamber and is a second preset distance away from the deflection electric field plate to obtain the ion beam deflected by the deflection electric field component.

2. The monitoring device according to claim 1, characterized in that: The beam detection component comprises: First beam slits, a plurality of first slits with preset spacing are provided, and the first beam slits are at a first preset horizontal distance and a first preset vertical distance relative to the first / second deflection electric field plates; The first Faraday cup is placed behind the slit of the first beam slit to obtain the ion beam passing through the first slit.

3. The monitoring device according to claim 2, characterized in that: The beam detection assembly also includes: Second beam slits, a plurality of second slits with preset spacing are provided, and the second beam slits have a second preset horizontal distance and a second preset vertical distance relative to the first / second deflection electric field plates; The second Faraday cup is disposed behind the second slit and acquires the ion beam passing through the second slit.

4. The monitoring device according to claim 3, characterized in that: The distance between the second slits arranged on the second beam slit is different from the distance between the first slits arranged on the first beam slit.

5. The monitoring device according to claim 3, characterized in that: The first preset horizontal distance is greater than the second preset horizontal distance.

6. The monitoring device according to any one of claims 3 to 5, characterized in that: The first / second Faraday cup moves parallel to the first / second beam slit direction to receive ions passing through the first / second slit.

7. The monitoring device according to any one of claims 3 to 5, characterized in that: The projection of the first / second slit on the first / second beam slit in the direction of the first / second Faraday cup is within the first / second Faraday cup.

8. The monitoring device according to claim 2, characterized in that: The ion implanter is provided with a neutral beam filter, and the monitoring device is arranged between the neutral beam filter and the process chamber.

9. The monitoring device according to claim 2, characterized in that: The ion implanter is provided with a deflection magnetic field, and the monitoring device is arranged between the ion energy acceleration electric field and the deflection magnetic field.

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