D-band miniaturized integrated frequency doubling assembly

Abstract

The utility model relates to a D-band miniaturized integrated frequency multiplication assembly, which comprises a quadruplicated frequency amplification circuit, a microstrip impedance matching circuit and a D-band triple frequency circuit, the quadruplicated frequency amplification circuit and the microstrip impedance matching circuit are connected in series and then are used for driving a rear D-band frequency tripling circuit. According to the utility model, multiple stages of radio frequency devices are integrated into one radio frequency device, so that the cost is saved, the overall size is reduced, and the overall weight is reduced; according to the utility model, the use process is more convenient, and the test efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field related to signal sources, and in particular to a D-band miniaturized integrated frequency multiplication component. Background Art

[0002] Signal source, also known as signal generator, is mainly used to generate electrical signals with specific parameters. It provides electrical signals that meet the requirements when testing, studying or adjusting electronic circuits and equipment.

[0003] In the field of millimeter wave terahertz research, the device frequencies involved range from tens of GHz to even the terahertz band. When testing and studying millimeter wave terahertz devices, it is necessary to provide a driving signal to the device in order to test and study the device.

[0004] So far, the frequency range of microwave signal sources on the market is mainly below 40GHz. In order to obtain microwave signals above 40GHz, a multi-stage frequency multiplication amplifier device cascade is often used. This acquisition method requires many devices in the entire RF link, a complex structure, and a relatively heavy weight.

[0005] In view of the above-mentioned defects, the designers have actively carried out research and innovation in order to create a D-band miniaturized integrated frequency doubling component to make it more valuable for industrial use. Utility Model Content

[0006] In order to solve any of the above technical problems, the purpose of the utility model is to provide a D-band miniaturized integrated frequency doubling component.

[0007] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0008] A D-band miniaturized integrated frequency multiplication component, comprising a frequency quadrupling amplifier circuit, a microstrip impedance matching circuit and a D-band frequency tripler circuit;

[0009] The microstrip impedance matching circuit includes a dielectric substrate, on which an input matching branch and an output matching branch are arranged in sequence from left to right, and the input matching branch and the output matching branch are connected together through a straight-through transmission line;

[0010] The quadruple frequency amplifier circuit is connected to the input matching branch, and the output matching branch is connected to the D-band triple frequency circuit;

[0011] The quadruple frequency amplifier circuit and the microstrip impedance matching circuit are connected in series to drive the D-band triple frequency circuit behind.

[0012] As a further improvement of the utility model, the quadruple frequency amplifier circuit is an MMIC quadruple frequency amplifier circuit, which is provided with a first-stage power amplifier chip, a first-stage doubler chip, a second-stage power amplifier chip, a second-stage doubler chip and a third-stage power amplifier chip which are interconnected from left to right.

[0013] As a further improvement of the utility model, the D-band triple frequency circuit is provided with a low-pass filter, a diode frequency conversion circuit and a high-pass filter which are connected to each other in sequence from left to right.

[0014] As a further improvement of the present invention, the diode frequency conversion circuit includes two diodes connected in reverse parallel.

[0015] As a further improvement of the present invention, the diode is a Schottky diode.

[0016] As a further improvement of the utility model, the dielectric substrate is a quartz dielectric substrate.

[0017] As a further improvement of the present invention, the through transmission line is a 50Ω through transmission line.

[0018] By means of the above solution, the utility model has at least the following advantages:

[0019] The utility model integrates multiple radio frequency devices into one radio frequency device, thus saving costs, reducing the overall volume, and reducing the overall weight;

[0020] The utility model is more convenient in use and improves the testing efficiency.

[0021] The above description is only an overview of the technical solution of the utility model. In order to more clearly understand the technical means of the utility model and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the utility model in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.

[0023] Figure 1 This is a structural schematic diagram of a D-band miniaturized integrated frequency doubling component of the utility model;

[0024] Figure 2 yes Figure 1 The schematic diagram of the structure of the quadruple frequency amplifier circuit;

[0025] Figure 3 yes Figure 1 Schematic diagram of the structure of the microstrip impedance matching circuit;

[0026] Figure 4 yes Figure 1 Schematic diagram of the structure of the mid-D band frequency tripler circuit.

[0027] The meanings of the various reference numerals in the figures are as follows.

[0028] Four-times frequency amplifier circuit 1, microstrip impedance matching circuit 2, D-band triple-times frequency circuit 3;

[0029] A first-stage power amplifier chip 11, a first-stage frequency doubler chip 12, a second-stage power amplifier chip 13, a second-stage frequency doubler chip 14, and a third-stage power amplifier chip 15;

[0030] A dielectric substrate 21, an input matching branch 22, a through transmission line 23, and an output matching branch 24;

[0031] Low pass filter 31 , diode frequency conversion circuit 32 , high pass filter 33 . DETAILED DESCRIPTION

[0032] The following is a further detailed description of the specific implementation of the present invention in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0033] In order to make the technical personnel in the technical field better understand the scheme of the utility model, the technical scheme in the embodiment of the utility model will be clearly and completely described below in combination with the drawings in the embodiment of the utility model. Obviously, the described embodiment is only a part of the embodiment of the utility model, rather than all the embodiments. The components of the embodiment of the utility model usually described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiment of the utility model provided in the drawings is not intended to limit the scope of the utility model for protection, but only represents the selected embodiment of the utility model. Based on the embodiment of the utility model, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the utility model.

[0034] Example

[0035] like Figure 1 to Figure 4 As shown,

[0036] A D-band miniaturized integrated frequency doubling component comprises a quadruple frequency amplifier circuit 1, a microstrip impedance matching circuit 2 and a D-band triple frequency circuit 3. The quadruple frequency amplifier circuit 1 and the microstrip impedance matching circuit 2 are connected in series to drive the rear D-band triple frequency circuit 3.

[0037] In the prior art, a multi-stage frequency doubling amplifier device cascade is often used to obtain microwave signals above 40 GHz. However, the utility model uses a method in which a quadruple frequency amplifier circuit 1 and a microstrip impedance matching circuit 2 are connected in series and then used to drive a D-band triple frequency circuit 3 at the rear. The D-band RF signal can be obtained and output only through the D-band triple frequency circuit 3 without the need for a cascade method.

[0038] 1. Quadruple frequency amplifier circuit 1:

[0039] The quadruple frequency amplifier circuit 1 is an MMIC quadruple frequency amplifier circuit, which is provided with a first-stage power amplifier chip 11, a first-stage doubler chip 12, a second-stage power amplifier chip 13, a second-stage doubler chip 14 and a third-stage power amplifier chip 15 which are connected to each other from left to right.

[0040] 2. Microstrip impedance matching circuit 2:

[0041] The microstrip impedance matching circuit 2 includes a dielectric substrate 21, which is a quartz dielectric substrate. An input matching branch 22 and an output matching branch 24 are arranged on the dielectric substrate 21 from left to right, and the input matching branch 22 and the output matching branch 24 are connected together through a straight-through transmission line 23. The quadruple frequency amplifier circuit 1 is connected to the input matching branch 22, and the output matching branch 24 is connected to the D-band triple frequency circuit 3.

[0042] The through transmission line 23 is a 50Ω through transmission line.

[0043] 3. D-band triple frequency circuit 3:

[0044] The D-band triple frequency circuit 3 is provided with a low-pass filter 31, a diode frequency conversion circuit 32 and a high-pass filter 33 connected to each other from left to right. The diode frequency conversion circuit 32 includes two diodes connected in reverse parallel, and the diodes are Schottky diodes.

[0045] A D-band miniaturized integrated frequency multiplication component specifically includes a front-stage MMIC quadruple frequency amplifier circuit 1 and a rear-stage D-band triple frequency amplifier circuit 3 based on a Schottky diode nonlinear design. The front-stage MMIC quadruple frequency amplifier circuit 1 and the rear-stage D-band triple frequency amplifier circuit 3 based on a Schottky diode nonlinear design are matched and interconnected through a microstrip impedance matching circuit 2.

[0046] The entire signal transmission process is as follows: the input signal passes through the first-stage MMIC quadruple frequency amplifier circuit 1 to obtain a driving signal that can drive the Schottky diode to work. After passing through the MMIC quadruple frequency amplifier circuit 1, the signal passes through the microstrip impedance matching circuit 2 and enters the D-band triple frequency circuit 3 based on the nonlinear design of the Schottky diode. Through the Schottky diode frequency conversion circuit 32, the D-band RF signal is obtained and output.

[0047] In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implying the number of technical features indicated. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present utility model, unless otherwise specified, "multiple" means two or more.

[0048] In the description of the present utility model, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection, it can be a mechanical connection, it can be an electrical connection, it can be a direct connection, it can be an indirect connection through an intermediate medium, and it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0049] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the technical principle of the present invention, and these improvements and modifications should also be regarded as within the protection scope of the present invention.

Claims

1. A D-band miniaturized integrated frequency multiplication component, characterized in that: It comprises a frequency quadrupling amplifier circuit (1), a microstrip impedance matching circuit (2) and a D-band frequency tripler circuit (3); The microstrip impedance matching circuit (2) comprises a dielectric substrate (21), on which an input matching branch (22) and an output matching branch (24) are arranged in sequence from left to right, and the input matching branch (22) and the output matching branch (24) are connected together via a straight-through transmission line (23); The quadruple frequency amplifier circuit (1) is connected to an input matching branch (22), and the output matching branch (24) is connected to a D-band triple frequency circuit (3); The quadruple frequency amplifier circuit (1) and the microstrip impedance matching circuit (2) are connected in series and used to drive the D-band triple frequency circuit (3) behind them.

2. A D-band miniaturized integrated frequency multiplication component as claimed in claim 1, characterized in that: The quadruple frequency amplifier circuit (1) is an MMIC quadruple frequency amplifier circuit, and the MMIC quadruple frequency amplifier circuit is provided with a first-stage power amplifier chip (11), a first-stage doubler chip (12), a second-stage power amplifier chip (13), a second-stage doubler chip (14), and a third-stage power amplifier chip (15) which are connected to each other in sequence from left to right.

3. A D-band miniaturized integrated frequency multiplication component as claimed in claim 1, characterized in that: The D-band triple frequency circuit (3) is provided with a low-pass filter (31), a diode frequency conversion circuit (32) and a high-pass filter (33) which are connected to each other in sequence from left to right.

4. A D-band miniaturized integrated frequency multiplication component as claimed in claim 3, characterized in that: The diode frequency conversion circuit (32) comprises two diodes connected in reverse parallel.

5. A D-band miniaturized integrated frequency multiplication component as claimed in claim 4, characterized in that: The diode is a Schottky diode.

6. A D-band miniaturized integrated frequency multiplication component as claimed in claim 1, characterized in that: The dielectric substrate (21) is a quartz dielectric substrate.

7. A D-band miniaturized integrated frequency multiplication component as claimed in claim 1, characterized in that: The through transmission line (23) is a 50Ω through transmission line.

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