Integrated multichannel photoelectric sensor

By integrating multiple band chips and combining isolation components and filter designs, the existing fire detectors have been solved, and the miniaturization and integrated sensors with high reliability and low false alarm rate are achieved.

CN222674868UActive Publication Date: 2025-03-25ZHENGZHOU WINSEN ELECTRONICS TECH CO LTD +1
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Patent Information

Application Number
CN202421418413.7
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-06-20
Publication Date
2025-03-25
Estimated Expiration
2034-06-20

AI Technical Summary

Technical Problem

The existing fire detectors use single-band sensors, which leads to large volumes of the entire machine, high material costs, and it is difficult to achieve high reliability and low false alarm rate.

Method used

An integrated multi-channel photoelectric sensor is designed to integrate multiple band chips into one sensor, adopt a multi-channel design, combining isolation elements and filters to achieve independent detection and filtering of light rays in different bands.

Benefits of technology

The sensor miniaturization and integration are realized, the module volume is reduced, procurement costs are reduced, the assembly production efficiency of the entire machine module is improved, the product reliability and signal filtering effect are enhanced, and the false alarm and missed alarm rate is reduced.

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Abstract

The utility model provides an integrated multichannel photoelectric sensor, relates to the technical field of infrared detectors, and is used for solving the technical problem that a multiband detection sensor is complex in structure. The multichannel photoelectric sensor comprises a tube socket, a tube pin, a tube cap and a lead, the tube cap covers the tube socket and is provided with a window, and the multichannel photoelectric sensor is characterized by further comprising at least two sensitive element chips capable of absorbing different wave bands, and the sensitive element chips are arranged on the tube socket and communicated with the tube pin through the lead; an optical filter with different band pass is arranged above each sensitive element chip; and the isolation element isolates each sensitive element chip, and an independent space is formed between the isolation element and the optical filter. According to the utility model, a plurality of waveband chips are integrated and packaged in one sensor to form a multi-channel design, and a plurality of original single-channel sensors are replaced, so that miniaturization and integration can be realized, and the size of a module is reduced.
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Description

Technical Field

[0001] The utility model relates to the technical field of infrared detectors, in particular to an integrated multi-channel photoelectric sensor. Background Art

[0002] Photoelectric sensors are detection devices that utilize the photoelectric effect of photosensitive materials to directly convert light signals into electrical signals. Compared with thermal sensors, they have the characteristics of fast response speed and high sensitivity.

[0003] With the frequent occurrence of fires in daily life, which poses a serious threat to the property and lives of the country and the people, the country has attached more and more importance to fire monitoring in recent years. The high-end industrial security field, especially forest fire prevention, has an increasingly high demand for flame detection. On the one hand, the detection distance is farther, and on the other hand, the reliability and stability of the whole machine are also high, and there must be no false alarms or missed alarms. Therefore, the demand for highly reliable and highly sensitive flame sensors is becoming more and more urgent.

[0004] At present, conventional thermal and photoelectric fire detectors all use single-band ultraviolet sensors, and the 2.7μm / 3.8μm / 4.3μm / 5.0μm and other bands are welded on the flame module solution respectively. Generally, there are three infrared, two infrared, two red plus one purple, three red plus one purple, single ultraviolet and other combination designs, which causes the back-end whole machine to have large size and high material cost. Utility Model Content

[0005] In view of the technical problem of complex structure of multi-band detection sensors, the utility model proposes an integrated multi-channel photoelectric sensor, which integrates and packages multiple band chips in one sensor to make a multi-channel design, replacing the original multiple single-channel sensors, and can achieve miniaturization and integration and reduce the module volume.

[0006] In order to achieve the above object, the technical solution of the utility model is implemented as follows:

[0007] An integrated multi-channel photoelectric sensor comprises a tube seat, tube pins, a tube cap and leads, wherein the tube cap is arranged on the tube seat and has a window, and further comprises at least two sensitive element chips capable of absorbing different wavebands, wherein the sensitive element chips are arranged on the tube seat and are connected to the tube pins through leads; a filter with a different passband is arranged above each sensitive element chip; and an isolation element is used to isolate each sensitive element chip and form an independent space between the isolation element and the filter.

[0008] The sensitive element chip can detect light in the waveband of 280nm-360nm, 2.7μm, 3.8μm or 4.3μm.

[0009] The tube cap is provided with windows equal in number to the sensitive element chips, and the filters are respectively arranged on the windows;

[0010] The window is rectangular or circular.

[0011] The isolation element is an isolation block, the upper and lower surfaces of which respectively abut against the upper surface of the tube seat and the top of the tube cap, and the sensitive element chip is enclosed in an independent space formed by the isolation block, the tube seat and the filter.

[0012] The isolation block is in a straight line, Y-shaped or +-shaped structure.

[0013] The isolation element is a cover plate, which is arranged on all sensitive element chips. A corresponding light-transmitting hole is provided on the cover plate above each sensitive element chip, and a filter is arranged on the light-transmitting hole. The sensitive element chip is enclosed in an independent space formed by the cover plate, the tube seat and the filter.

[0014] The cover plate is provided with a partition plate on one side close to the tube seat, and the partition plate separates adjacent sensitive element chips.

[0015] A window is arranged on the pipe cap, and a window sheet is arranged at the window.

[0016] The window piece is a sapphire window piece.

[0017] The sensitive element chip is connected to the pins through leads, and the pins are inserted into the base.

[0018] Beneficial effects of the utility model:

[0019] 1. Integrate and package multiple band chips into a sensor to make it multi-channel, replacing the original multiple single-channel sensors, which can achieve miniaturization and integration and reduce the size of the module;

[0020] 2. Multi-channel design can reduce procurement costs, improve the assembly efficiency of the whole module, and simplify the design;

[0021] 3. The filter of the corresponding band can be directly attached to the sensitive element chip or to the window of the tube cap;

[0022] 4. Each detection photosensitive chip is isolated by an isolation block or cover plate, which can effectively improve the filtering effect of the filter and prevent interference from clutter signals;

[0023] 5. The combination design of multiple chips with different bands for detection can bring out the best performance of each material, improve the reliability of the product, and reduce the false alarm and missed alarm rates. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 Schematic diagram of the structure of the pipe cap.

[0026] Figure 2 It is a schematic diagram of the structure of another pipe cap.

[0027] Figure 3 This is a schematic diagram of the structure of multiple chips on a semi-finished tube base in Example 2.

[0028] Figure 4 Schematic diagram of the structure of the tube cap in Example 3.

[0029] Figure 5 This is a schematic diagram of the structure of multiple chips on a semi-finished tube base in Example 3.

[0030] In the figure, 1. tube socket; 2. tube pin; 3. tube cap; 4. lead; 5. sensitive element chip; 6. window; 7. filter; 8. isolation block; 9. cover plate; 10. window piece. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0032] Example 1

[0033] An integrated multi-channel photoelectric sensor, such as Figure 1-5As shown, it includes a tube base 1, a tube pin 2, a tube cap 3 and a lead 4. The tube cap 3 is covered on the tube base 1 and is provided with a window 6. The window 6 is used to transmit light to ensure that the light can pass through the window 6 and enter the cavity formed by the tube cap 3 and the tube base 1. It also includes at least two or more sensitive element chips 5 that can absorb different bands, for example, there can be two, three or four sensitive element chips 5; the sensitive element chip 5 is arranged on the tube base 1 and connected with the tube pin 2 through the lead 4. Each sensitive element chip 5 corresponds to at least two tube pins 2, which are respectively connected to the upper electrode and the lower electrode in the sensitive element chip 5 to realize the output of ultraviolet or infrared signals in each band. The signal is processed and judged by the algorithm through the back-end circuit to achieve the purpose of monitoring fire. A filter 7 with different passbands is arranged above each sensitive element chip 5. The filter 7 selects the light transmitted to correspond to the wavelength of the light detected by the corresponding sensitive element chip 5 to reduce interference from other lights. An isolation element is arranged in the cavity formed by the tube cap 3 and the tube base 1, and can be fixed on the tube base 1. The isolation element isolates each sensitive element chip 5 and forms an independent space between the sensitive element chip 5 and the filter 7. The sensitive element chip 5 is arranged in each independent space, which can effectively improve the filtering effect of the filter 7 and prevent the interference of the intake of clutter signals.

[0034] The sensitive element chip 5 can detect light in the bands of 280nm-360nm, 2.7μm, 3.8μm or 4.3μm. Lead sulfide (PbS) and lead selenide (PbSe) are narrow-bandgap IV-VI compound semiconductor materials, and are both photoconductive sensitive materials for infrared light detection, wherein the response spectrum range of PbS is 1-3μm, and the response spectrum range of PbSe is 1-5μm. Gallium nitride (GaN) and silicon carbide (SiC) are both third-generation wide-bandgap semiconductor materials, with modern widths of 3.40eV and 3.26eV, respectively, and corresponding cutoff wavelengths of 365nm and 380nm, respectively, and have no response to visible light, thus overcoming the shortcomings of silicon-based ultraviolet sensors that have a strong response to visible light and low ultraviolet sensitivity, and are ideal materials for preparing ultraviolet sensors.

[0035] Since flames can radiate both infrared and ultraviolet signals when burning, the above ultraviolet and infrared photoelectric materials are also ideal design materials for high-end flame detection. Therefore, the sensitive element chip 5 uses gallium nitride (GaN) or silicon carbide (SiC) to detect the 280nm-360nm ultraviolet band, PbS to detect the 2.7μm infrared band, and PbSe to detect the 3.8μm and 4.3μm infrared bands.

[0036] The packaging structure of the integrated multi-channel photoelectric sensor is a TO package or a surface mount package; generally, an analog signal output design is adopted, and on this basis, an internal integrated ASIC digital conditioning chip can be extended to perform signal preprocessing and output in the form of digital signals.

[0037] Example 2

[0038] An integrated multi-channel photoelectric sensor, such as Figure 1-3 As shown, it includes a tube seat 1, a tube pin 2, a tube cap 3 and a lead 4. The tube cap 3 is covered on the tube seat 1 and is provided with a window 6. It also includes at least two sensitive element chips 5 that can absorb different bands. The sensitive element chips 5 are arranged on the tube seat 1 and are connected with the tube pin 2 through the lead 4; a filter 7 with a different passband is arranged above each sensitive element chip 5; and an isolation element is used to isolate each sensitive element chip 5 and form an independent space between the isolation element and the filter 7.

[0039] The tube cap 3 is provided with windows 6 equal to the number of sensitive element chips 5, and filters 7 are respectively provided on the windows 6; the windows 6 are rectangular or circular, and can also be other shapes, as long as the light can pass smoothly. The isolation element is an isolation block 8, and the upper and lower surfaces of the isolation block 8 respectively abut against the upper surface of the tube seat 1 and the top of the tube cap 3 to separate the adjacent sensitive element chips 5. The height of the isolation block 8 should be higher than the height of the sensitive element chip 5. The sensitive element chip 5 is enclosed in an independent space formed by the isolation block 8, the tube seat 1 and the filter 7. The isolation block 8 is a straight, Y or + shaped structure, and the shape of the isolation block 8 is determined according to the number of sensitive element chips 5.

[0040] Specifically, the photoelectric sensor is a four-channel sensor, including four independent sensitive element chips 5. The four sensitive element chips 5 respectively use gallium nitride (GaN) or silicon carbide (SiC) to detect the ultraviolet band of 280nm to 360nm, PbS to detect the infrared band of 2.7μm, and PbSe to detect the infrared band of 3.8μm and 4.3μm. The tube cap 3 is provided with four windows 6, and each window 6 is pasted with a filter 7 corresponding to the sensitive element chip 5. The isolation block 8 is a +-shaped structure, and the four sensitive element chips 5 are respectively located at the four corners of the isolation block 8. The isolation block 8 is respectively abutted on the upper surface of the tube seat 1 and the lower surface of the top of the tube cap 3. The light is received by the sensitive element chip 5 through the window 6 and the filter 7. The isolation block 8 blocks the light passing through the filter 7 to prevent it from being received by other sensitive element chips 5 and causing interference.

[0041] Example 3

[0042] An integrated multi-channel photoelectric sensor, such as Figure 4 and 5 As shown, it includes a tube seat 1, a tube pin 2, a tube cap 3 and a lead 4. The tube cap 3 is covered on the tube seat 1 and is provided with a window 6. It also includes at least two sensitive element chips 5 that can absorb different bands. The sensitive element chips 5 are arranged on the tube seat 1 and are connected with the tube pin 2 through the lead 4; a filter 7 with a different passband is arranged above each sensitive element chip 5; and an isolation element is used to isolate each sensitive element chip 5 and form an independent space between the isolation element and the filter 7.

[0043] The isolation element is a cover plate 9, which is provided on all sensitive element chips 5. A corresponding light-transmitting hole is provided on the cover plate 9 above each sensitive element chip 5, and a filter 7 is provided on the light-transmitting hole. The sensitive element chip 5 is enclosed in an independent space formed by the cover plate 9, the tube base 1 and the filter 7. The cover plate 9 is provided with a partition plate on the side close to the tube base 1, and the partition plate separates the adjacent sensitive element chips 5. The tube cap 3 is provided with a window 6, and a window sheet 10 is provided at the window 6. The window sheet 10 is a sapphire window sheet, which protects the internal sensitive element chip 5.

[0044] Specifically, the photoelectric sensor is a four-channel sensor, including four independent sensitive element chips 5. The four sensitive element chips 5 respectively use gallium nitride (GaN) or silicon carbide (SiC) to detect the 280nm-360nm ultraviolet band, PbS to detect the 2.7μm infrared band, and PbSe to detect the 3.8μm and 4.3μm infrared bands. A window 6 is provided on the cap 3, and a sapphire window plate is provided on the window 6. The cover plate 9 is covered on the four sensitive element chips 5, and a partition plate is provided on the side of the cover plate 9 close to the tube seat 1 to separate the adjacent sensitive element chips 5. A corresponding light-transmitting hole is provided on the cover plate 9 above each sensitive element chip 5, and the filter 7 is pasted on the light-transmitting hole. The sensitive element chip 5 is enclosed in an independent space formed by the cover plate 9, the tube seat 1 and the filter 7.

[0045] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An integrated multi-channel photoelectric sensor, comprising a tube base (1), a tube pin (2), a tube cap (3) and a lead (4), wherein the tube cap (3) is covered on the tube base (1) and is provided with a window (6), characterized in that: It also comprises at least two sensitive element chips (5) capable of absorbing different wavelength bands, wherein the sensitive element chips (5) are arranged on the tube base (1) and are connected to the tube pin (2) via the lead wire (4); a filter (7) with a different passband is arranged above each sensitive element chip (5); and an isolation element is provided, wherein the isolation element isolates each sensitive element chip (5) and forms an independent space between the isolation element and the filter (7).

2. The integrated multi-channel photoelectric sensor according to claim 1, characterized in that: The sensitive element chip (5) can detect light in the waveband of 280nm-360nm, 2.7μm, 3.8μm or 4.3μm.

3. The integrated multi-channel photoelectric sensor according to claim 1 or 2, characterized in that: The tube cap (3) is provided with windows (6) whose number is equal to the number of sensitive element chips (5), and the optical filters (7) are respectively arranged on the windows (6).

4. The integrated multi-channel photoelectric sensor according to claim 3, characterized in that: The window (6) is rectangular or circular.

5. The integrated multi-channel photoelectric sensor according to claim 4, characterized in that: The isolation element is an isolation block (8), the upper and lower surfaces of the isolation block (8) respectively abut against the upper surface of the tube seat (1) and the top of the tube cap (3), and the sensitive element chip (5) is enclosed in an independent space formed by the isolation block (8), the tube seat (1) and the filter (7).

6. The integrated multi-channel photoelectric sensor according to claim 5, characterized in that: The isolation block (8) is in a straight line, Y-shaped or +-shaped structure.

7. The integrated multi-channel photoelectric sensor according to claim 1 or 2, characterized in that: The isolation element is a cover plate (9), which is arranged on all the sensitive element chips (5), and a corresponding light-transmitting hole is provided on the cover plate (9) above each sensitive element chip (5), and the filter (7) is arranged on the light-transmitting hole. The sensitive element chip (5) is enclosed in an independent space formed by the cover plate (9), the tube seat (1) and the filter (7).

8. The integrated multi-channel photoelectric sensor according to claim 7, characterized in that: The cover plate (9) is provided with a partition plate on a side close to the tube base (1), and the partition plate separates adjacent sensitive element chips (5).

9. The integrated multi-channel photoelectric sensor according to claim 8, characterized in that: The pipe cap (3) is provided with a window (6), and a window sheet (10) is provided at the window (6).

10. The integrated multi-channel photoelectric sensor according to claim 9, characterized in that: The window piece (10) is a sapphire window piece.