Boron diffusion reaction gas inlet system and reaction equipment

Abstract

The utility model discloses a boron diffusion reaction intake system and reaction equipment, the boron diffusion reaction intake system comprises a boron source intake assembly and a reaction intake assembly, the boron source intake assembly comprises a first intake pipe, a first intake port is used for introducing a boron source, the first intake port is used for directly communicating with a reaction cavity, and the reaction intake assembly comprises a second intake pipe; the reaction gas inlet assembly comprises at least one second gas inlet pipe, a second gas inlet is used for introducing oxygen or nitrogen, and the second gas inlet pipe is isolated from the first gas inlet pipe; the reaction equipment comprises the boron diffusion reaction gas inlet system. According to the utility model, the first gas inlet pipe and the second gas inlet pipe are isolated from each other, and a boron source and other reaction gases are respectively fed through the first gas inlet pipe and the second gas inlet pipe, so that the boron source gas and oxygen are prevented from being mixed outside the reaction cavity, and the possibility that the boron source gas and the reaction gases react in advance before entering the reaction cavity is reduced; the influence of a gas inlet mode on a gas field in the reaction cavity is reduced, and the uniformity of sheet resistance of the silicon wafer is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of photovoltaic cell preparation, in particular to a boron diffusion reaction air intake system and reaction equipment. Background Art

[0002] Boron diffusion reaction is a key process in preparing PN junction of solar cells. During the reaction, boron source gas such as BBr3 or BCl3 is introduced into the reaction chamber of the furnace tube. Under high temperature environment, the boron source gas reacts with oxygen and is evenly distributed on the surface of the silicon wafer to form a doping source under the dilution of N2 and the action of airflow; in related technologies, BCl3 is mixed with oxygen before entering the furnace tube and reacts in advance during the ventilation process, which directly affects the gas field of the reaction gas in the reaction chamber and reduces the uniformity of the silicon wafer square resistance and the stability of the equipment. Summary of the invention

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model proposes a boron diffusion reaction intake system, which can block the premature reaction of the reaction gas before entering the furnace tube and improve the uniformity of the square resistance of the silicon wafer.

[0004] The utility model also provides a reaction device having the boron diffusion reaction air intake system.

[0005] According to the first aspect of the present invention, the boron diffusion reaction intake system includes:

[0006] A boron source air intake assembly, comprising a first air intake pipe, wherein two ends of the first air intake pipe respectively form a first air intake port and a first air outlet, wherein the first air intake port is used to introduce the boron source, and the first air outlet is used to directly connect to the reaction chamber;

[0007] The reaction air inlet assembly includes at least one second air inlet pipe, the two ends of the second air inlet pipe have a second air inlet and a second air outlet, the second air inlet is used to introduce oxygen or nitrogen, the second air outlet is used to connect to the reaction chamber, and the second air inlet pipe is isolated from the first air inlet pipe.

[0008] The boron diffusion reaction intake system according to the embodiment of the utility model has at least the following beneficial effects:

[0009] In the utility model, the first air inlet pipe and the second air inlet pipe are isolated from each other, and the boron source and other reaction gases are respectively introduced through the first air inlet pipe and the second air inlet pipe, thereby blocking the mixing of the boron source gas and oxygen outside the reaction chamber, reducing the possibility of premature reaction between the boron source gas and the reaction gas before entering the reaction chamber, and reducing the influence of the air intake method on the gas field in the reaction chamber, thereby improving the uniformity of the square resistance of the silicon wafer.

[0010] According to some embodiments of the present utility model, the reaction air intake assembly includes two second air intake pipes, and the two second air intake pipes are used to introduce oxygen and nitrogen respectively;

[0011] The reaction air intake assembly further includes a mixed air intake pipe, the second air outlets of the two second air intake pipes are both connected to one end of the mixed air intake pipe, and the other end of the mixed air intake pipe is used to communicate with the reaction chamber.

[0012] According to some embodiments of the present invention, the reaction air intake assembly includes three second air intake pipes, the three second air intake pipes are respectively used to introduce nitrogen, oxygen of a first concentration and oxygen of a second concentration, and the second air outlets of the three second air intake pipes are all used to directly connect to the reaction chamber.

[0013] According to some embodiments of the present utility model, the reaction air intake assembly includes three second air intake pipes, and the three second air intake pipes are used to introduce nitrogen, oxygen of the first concentration, and oxygen of the second concentration respectively;

[0014] The reaction air intake assembly further includes a mixing air intake pipe, the second air outlets of the three second air intake pipes are all connected to one end of the mixing air intake pipe, and the other end of the mixing air intake pipe is used to communicate with the reaction chamber.

[0015] According to some embodiments of the present invention, a first one-way valve is connected to the first air inlet pipe to limit the flow of the boron source from the first air inlet to the reaction chamber, and a second one-way valve is connected to the mixed air inlet pipe to limit the flow of oxygen or nitrogen from the second air inlet to the reaction chamber.

[0016] According to some embodiments of the present invention, a flow meter is provided on the first air intake pipe and each of the second air intake pipes.

[0017] According to some embodiments of the utility model, the first air intake pipe is connected to a first valve, the first valve is used to open and close the first air intake pipe, and each of the second air intake pipes is connected to a second valve, the second valve is used to open and close the corresponding second air intake pipe.

[0018] The reaction device according to the second embodiment of the utility model comprises:

[0019] The boron diffusion reaction intake system of the first aspect embodiment;

[0020] A reaction furnace comprises a furnace body, wherein a reaction chamber is provided inside the furnace body, and the furnace body has an air inlet portion, one end of the first air inlet pipe is connected to the air inlet portion so that the first air outlet is connected to the reaction chamber, and one end of the second air inlet pipe can ventilate the reaction chamber through the air inlet portion.

[0021] According to some embodiments of the present invention, the air inlet is located on the peripheral side of the furnace body, or the furnace body further has an air outlet, and the air inlet and the air outlet are respectively located at two opposite ends of the furnace body;

[0022] The reaction equipment further comprises an exhaust pipe, which is connected to the gas outlet and is used to extract gas from the reaction chamber.

[0023] According to some embodiments of the present invention, the height of the first air outlet is higher than the height of the second air outlet.

[0024] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The present invention is further described below with reference to the accompanying drawings and embodiments, wherein:

[0026] Figure 1 It is a schematic diagram of a first embodiment of the boron diffusion reaction intake system of the utility model;

[0027] Figure 2 It is a schematic diagram of a second embodiment of the boron diffusion reaction intake system of the utility model;

[0028] Figure 3 A schematic diagram of a third embodiment of the boron diffusion reaction intake system of the utility model;

[0029] Figure 4 It is a schematic diagram of an embodiment of the reaction equipment of the utility model;

[0030] Figure 5 It is a schematic diagram of another embodiment of the reaction equipment of the present invention.

[0031] Reference numerals:

[0032] Boron diffusion reaction air intake system 100, boron source air intake assembly 110, first air intake pipe 111, first air inlet 112, first air outlet 113, first check valve 114, first valve 115, reaction air intake assembly 120, second air intake pipe 121, second air inlet 122, second air outlet 123, second valve 124, mixing air intake pipe 130, second check valve 131, flow meter 140;

[0033] Reactor 200, reaction chamber 210, air inlet 220, air outlet 230;

[0034] The exhaust pipe 300. DETAILED DESCRIPTION

[0035] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0036] In the description of the present invention, it should be understood that descriptions involving orientation, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0037] In the description of the present utility model, "several" means more than one, "many" means more than two, "greater than", "less than", "exceed" etc. are understood to exclude the number itself, and "above", "below", "within" etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used to distinguish the technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0038] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0039] In the description of the utility model, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0040] At present, there are two main conventional boron diffusion intake methods: (1) Boron source, oxygen and nitrogen are ventilated to the reaction chamber from different intake pipes. Before entering the reaction chamber, the intake pipes of the boron source, oxygen and nitrogen are connected to the mixing pipe. The boron source, oxygen and nitrogen enter the same mixing pipe together and enter the reaction chamber through the mixing pipe. The boron source and oxygen react in advance in the mixing pipe; (2) Boron source and small oxygen share the same intake pipe to ventilate the reaction chamber. Nitrogen and large oxygen are ventilated to the reaction chamber from different intake pipes. Boron source and small oxygen react in advance in the intake pipe. The uniformity of silicon wafer square resistance directly affects the process stability of the reaction equipment, and the gas field of the reaction chamber in the reaction equipment is an important parameter that determines the uniformity of silicon wafer square resistance. The gas intake method directly affects the gas field distribution in the reaction chamber. Since the boron source and oxygen react in advance before entering the reaction chamber, the uniformity of silicon wafer square resistance is reduced.

[0041] In view of the above situation, an embodiment of the present utility model provides a boron diffusion reaction intake system 100, referring to Figure 1 The boron diffusion reaction air intake system 100 includes a boron source air intake assembly 110 and a reaction air intake assembly 120. The boron source air intake assembly 110 is used to introduce a boron source gas, such as BBr3, BCl3, etc., into the reaction chamber 210 of the furnace tube. The reaction air intake assembly 120 is used to introduce a reaction gas or a purge gas, such as nitrogen, oxygen, etc., into the reaction chamber 210 of the furnace tube. The boron source air intake assembly 110 includes a first air intake pipe 111, and the two ends of the first air intake pipe 111 respectively form a first air intake port 112 and a first air outlet 113, the first air intake port 112 is used to introduce a boron source, and the first air outlet 113 is used to directly connect to the reaction chamber 210, after the boron source gas enters the first air intake pipe 111 through the first air intake port 112, it is introduced into the reaction chamber 210 through the first air outlet 113; the reaction air intake assembly 120 includes at least one second air intake pipe 121, and the two ends of the second air intake pipe 121 have a second air intake port 122 and a second air outlet 123, the second air intake port 122 is used to introduce a reaction gas such as oxygen or nitrogen, and the second air outlet 123 is used to connect to the reaction chamber 210, the reaction gas enters the second air intake pipe 121 through the second air intake port 122, and is introduced into the reaction chamber 210 through the second air outlet 123.

[0042] In the present invention, the first air inlet pipe 111 and the second air inlet pipe 121 are isolated from each other, and the boron source and other reaction gases are respectively introduced through the first air inlet pipe 111 and the second air inlet pipe 121, thereby blocking the mixing of the boron source gas and oxygen outside the reaction chamber 210, reducing the possibility of premature reaction between the boron source gas and the reaction gas before entering the reaction chamber 210, and reducing the influence of the air intake method on the gas field in the reaction chamber 210, thereby improving the uniformity of the square resistance of the silicon wafer.

[0043] In one embodiment, Figure 2As shown, the reaction gas inlet assembly 120 includes two second gas inlet pipes 121, and the two second gas inlet pipes 121 are used to introduce oxygen and nitrogen respectively. The reaction gas inlet assembly 120 also includes a mixed gas inlet pipe 130, and the second gas outlets 123 of the two second gas inlet pipes 121 are both connected to one end of the mixed gas inlet pipe 130, and the other end of the mixed gas inlet pipe 130 is used to communicate with the reaction chamber 210. In this embodiment, the first gas inlet pipe 111 introduces the boron source gas into the reaction chamber 210, and the nitrogen and oxygen are respectively ventilated into the reaction chamber 210 through the two second gas inlet pipes 121. The nitrogen and oxygen are mixed in the mixed gas inlet pipe 130 before entering the reaction chamber 210, and enter the reaction chamber 210 through the transportation of the mixed gas inlet pipe 130; on the one hand, the boron source gas and the oxygen are isolated before entering the reaction chamber 210 to avoid the early reaction of the two, and on the other hand, the nitrogen and the oxygen are pre-mixed before entering the reaction chamber 210, which is conducive to adjusting the concentration of the reaction gas in advance and allowing the reaction gas boron source gas to react fully.

[0044] It should be noted that the introduction of nitrogen into the reaction chamber 210 can adjust the pressure and temperature in the reaction chamber 210, and by purging, provide a pure reaction environment for each stage of the reaction in the reaction chamber 210. In addition, different concentrations of oxygen can be introduced into the second air inlet pipe 121 to provide oxygen for different types of process reactions in the reaction chamber 210, such as forming an oxide layer, depositing and doping, etc.; further, the second air inlet pipe 121 is connected to the air supply pipeline for supplying large oxygen and small oxygen, and a valve that can be opened and closed is set on the air supply pipeline. When a certain concentration of oxygen needs to be supplied, the valve on the corresponding air supply pipeline is opened, and the valve on the other air supply pipeline is closed, so that the second air inlet pipe 121 can receive oxygen of the corresponding concentration and ventilate the reaction chamber 210.

[0045] In another embodiment, if Figure 3 As shown, the reaction air intake assembly 120 includes three second air intake pipes 121, and the three second air intake pipes 121 are used to introduce nitrogen, oxygen of a first concentration, and oxygen of a second concentration, and the second air outlets 123 of the three second air intake pipes 121 are all used to directly connect to the reaction chamber 210. Thus, oxygen, nitrogen, and boron source gas of different concentrations are isolated from each other before entering the reaction chamber 210, which can prevent the premature reaction of the boron source gas and oxygen, and the first air intake pipe 111 and the second air intake pipe 121 are directly connected to the reaction chamber 210, simplifying the structure of the boron diffusion reaction air intake system 100.

[0046] Or, in another embodiment, Figure 1As shown, the reaction gas inlet assembly 120 includes three second gas inlet pipes 121, which are respectively used to introduce nitrogen, oxygen of the first concentration and oxygen of the second concentration. The reaction gas inlet assembly 120 also includes a mixed gas inlet pipe 130, and the second gas outlets 123 of the three second gas inlet pipes 121 are all connected to one end of the mixed gas inlet pipe 130, and the other end of the mixed gas inlet pipe 130 is used to communicate with the reaction chamber 210. Oxygen of different concentrations is transported through different second gas inlet pipes 121, respectively, so that oxygen can be supplied for different reactions in the reaction chamber 210. The second gas inlet pipe 121 can be directly connected to the gas supply pipeline that supplies oxygen of corresponding concentration, which is convenient and fast to supply gas, and can avoid the mixing of oxygen with other gases, which affects the concentration control accuracy of oxygen, thereby improving the reaction quality in the reaction chamber 210.

[0047] In addition, different reaction gases supplied by the reaction air intake assembly 120 are supplied to the reaction chamber 210 through the mixed air intake pipe 130, and the boron source gas supplied by the boron source air intake assembly 110 is supplied to the reaction chamber 210 through the first air intake pipe 111. The mixed air intake pipe 130 and the first air intake pipe 111 are isolated from each other, which can block the premature reaction of the boron source gas and oxygen. In addition, two gas inlets are arranged on the furnace tube, which are respectively connected to the mixed air intake pipe 130 and the first air intake pipe 111, so that all types of gases can be supplied to the reaction chamber 210, which can simplify the air intake structure of the furnace tube.

[0048] Furthermore, a first one-way valve 114 is provided on the first air inlet pipe 111, and the first one-way valve 114 is used to limit the boron source gas to flow only from the first air inlet port 112 to the reaction chamber 210, so as to prevent the boron source gas from flowing back in the first air inlet pipe 111, and a second one-way valve 131 is connected to the mixed air inlet pipe 130 or the second air inlet pipe 121, and the second one-way valve 131 is used to limit the oxygen or nitrogen to flow only from the second air inlet port 122 to the reaction chamber 210, so as to prevent the reaction gas from flowing back in the mixed air inlet pipe 130.

[0049] In addition, the first air inlet pipe 111 and the second air inlet pipe 121 are both provided with a flow meter 140, which is used to detect the gas flow rate introduced from the first air inlet pipe 111 and the second air inlet pipe 121, which is conducive to the precise control of the reaction in the reaction chamber 210. For example, the boron diffusion reaction air inlet system 100 also includes a control module, and the flow meter 140 is communicatively connected with the control module, and the communication connection is not limited to the connection methods such as wire connection, WiFi, infrared, and Bluetooth. The control module is used to receive the detection data of the flow meter 140. When the value detected by the flow meter 140 reaches a preset value, the control module controls the first air inlet pipe 111 or the second air inlet pipe 121 to stop ventilation. After completing a certain stage of the reaction, the control module controls the first air inlet pipe 111 or the second air inlet pipe 121 to ventilate the reaction chamber 210 again.

[0050] The first air inlet pipe 111 is connected to a first valve 115, and the first valve 115 is used to open and close the first air inlet pipe 111. Each second air inlet pipe 121 is connected to a second valve 124, and the second valve 124 is used to open and close the corresponding second air inlet pipe 121. By providing the first valve 115 and the second valve 124, it is beneficial to open and close the corresponding first air inlet pipe 111 or the second air inlet pipe 121 by controlling the first valve 115 and the second valve 124, so that the corresponding type of gas is introduced into the reaction chamber 210, and the gas performs different types of reactions in the reaction chamber 210 at different reaction stages.

[0051] It can be understood that the first valve 115 and the second valve 124 are both connected to the control module for communication, and the control module can control the opening and closing of the first valve 115 and the second valve 124 according to the reaction requirements in the current reaction chamber 210 and the detection data feedback in each sensor. Specifically, when the reaction chamber 210 needs to be purged, the control module controls the second valve 124 on the second air inlet pipe 121 for introducing nitrogen to be opened, and the second valves 124 on the other second air inlet pipes 121 and the first valve 115 on the first air inlet pipe 111 are closed, and nitrogen is introduced into the reaction chamber 210 from the second air inlet pipe 121 to purge the reaction environment in the reaction chamber 210 and adjust the pressure and temperature in the reaction chamber 210; when the reaction chamber 210 needs to perform a doping reaction, the control module controls the second valve 124 on the second air inlet pipe 121 for introducing oxygen to be opened, and the first valve 115 on the first air inlet pipe 111 is opened, and controls the second valves 124 on the other second air inlet pipes 121 to be closed, and the nitrogen is introduced into the reaction chamber 210 from the first air inlet pipe 111 to introduce oxygen. Boron source gas is introduced, and oxygen is introduced into the reaction chamber 210 from the second air inlet pipe 121. The oxygen undergoes an oxidation reaction in the reaction chamber 210 and forms an oxide layer on the surface of the silicon wafer. During this process, the second air inlet pipe 121 introduces a large amount of oxygen into the reaction chamber 210. When a doping reaction is performed in the reaction chamber 210, the control module controls the second valve 124 on the second air inlet pipe 121 for introducing oxygen to be opened, and the first valve 115 on the first air inlet pipe 111 to be opened, and controls the second valves 124 on other second air inlet pipes 121 to be closed, boron source gas is introduced into the reaction chamber 210 from the first air inlet pipe 111, and oxygen is introduced into the reaction chamber 210 from the second air inlet pipe 121. Oxygen undergoes a deposition and doping reaction in the reaction chamber 210. During this process, the second air inlet pipe 121 introduces a small amount of oxygen into the reaction chamber 210.

[0052] It can be understood that the outer layers of the first air inlet pipe 111, the second air inlet pipe 121 and the mixing air inlet pipe 130 can be wrapped with an insulation layer or a heating layer to keep the temperatures inside the first air inlet pipe 111, the second air inlet pipe 121 and the mixing air inlet pipe 130 within a corresponding range, thereby reducing the heat loss of the gas during the transportation process and allowing the gas to enter the reaction chamber 210 within a preset temperature range.

[0053] The utility model also provides a reaction device, referring to Figure 4 and Figure 5 The reaction equipment includes the above-mentioned boron diffusion reaction air intake system 100, and also includes a reactor 200, wherein a reaction chamber 210 is provided inside the reactor 200, and the reactor 200 has an air intake portion 220, one end of the first air intake pipe 111 is connected to the air intake portion 220, and the first air outlet 113 is connected to the reaction chamber 210, so that the boron source gas introduced into the first air intake pipe 111 enters the reaction chamber 210 through the first air outlet 113, and one end of the second air intake pipe 121 can be ventilated to the reaction chamber 210 through the air intake portion 220. The first air intake pipe 111 is isolated from the second air intake pipe 121, which can reduce the mixing and reaction of the boron source gas and oxygen when entering the reaction chamber 210, reduce the impact on the gas field in the reaction chamber 210, and improve the uniformity of the square resistance of the silicon wafer.

[0054] In some embodiments, Figure 4 The air inlet 220 is disposed at the end of the reaction furnace 200, and an air inlet interface for connecting the first air inlet pipe 111 and the second air inlet pipe 121 is provided on the air inlet 220. The first air inlet pipe 111 and the second air inlet pipe 121 are both ventilated into the reaction chamber 210 through the air inlet 220, which is conducive to the centralized arrangement of the air inlet structure on the air inlet 220; or, in other embodiments, such as Figure 5 The air inlet 220 is arranged on the peripheral side of the reaction furnace 200, and an air inlet interface for connecting the first air inlet pipe 111 and the second air inlet pipe 121 is provided on the air inlet 220. The first air inlet pipe 111 and the second air inlet pipe 121 are both ventilated into the reaction chamber 210 through the air inlet 220. The air inlet 220 is arranged on the peripheral side of the reaction furnace 200, so that the reaction gas and the boron source gas can be fully diffused to different areas in the reaction chamber 210, which is beneficial to improving the uniformity of the oxide layer deposition and the uniformity of the silicon wafer square resistance; in addition, the end of the first air inlet pipe 111 and the second air inlet pipe 121 into which a small amount of oxygen is introduced can be further provided. The end of the air inlet pipe 121 is connected to the upper side of the furnace tube, and the ends of the second air inlet pipe 121 for introducing oxygen and the second air inlet pipe 121 for introducing nitrogen are connected to the lower side of the furnace tube. At this time, the height of the first air outlet 113 is higher than the height of the second air outlet 123, so that the air inlet part 220 located on the upper side of the reaction furnace 200 is used to introduce a small concentration of gas, and the air inlet part 220 located on the lower side of the reaction furnace 200 is used to introduce a large concentration of gas, which is conducive to the full mixing of the gas in the reaction chamber 210, so that the gas reacts fully in the reaction chamber 210, and further improves the uniformity of the square resistance of the silicon wafer. Of course, if Figure 5 As shown, the air inlet 220 may also be disposed at the end or the peripheral side of the reaction furnace 200 .

[0055] It should be noted that, taking into account the effect of isolating the first air inlet pipe 111 from the second air inlet pipe 121 on the uniformity of gas mixing, the utility model changes the connection position of the first air inlet pipe 111 and the second air inlet pipe 121 on the reactor 200, so that different types of gases can be fully mixed and react thoroughly in the reaction chamber 210, thereby improving the uniformity of the square resistance of the silicon wafer.

[0056] In addition, a gas distribution pipeline is arranged in the reactor 200, and multiple gas distribution pipelines can be arranged. The first gas inlet pipe 111 and the second gas inlet pipe 121 are both connected to the gas distribution pipeline, so that the boron source gas and the reaction gas can be ventilated to the reaction chamber 210 through the gas distribution pipeline. For the case where the gas inlet part 220 is arranged on the side of the reactor 200, the gas distribution pipeline is arranged along the length direction of the reactor 200, and the gas distribution pipeline is provided with multiple gas distribution holes along the length direction. For the case where the gas inlet part 220 is arranged at the end of the reactor 200, the gas distribution pipeline is arranged along the circumference of the reactor 200, and the gas distribution pipeline is provided with multiple gas distribution holes along the circumference. The gas in the gas distribution pipeline is distributed to different positions in the reaction chamber 210 through the gas distribution holes, which can further improve the mixing uniformity of different types of gases in the reaction chamber 210 and make the gas fully react in the reaction chamber 210.

[0057] Furthermore, the reaction setting also includes an exhaust pipe 300, and the reactor 200 also has an exhaust portion 230. The exhaust pipe 300 is connected to the exhaust portion 230 and is used to extract the gas in the reaction chamber 210; when the second air inlet pipe 121 introduces nitrogen into the reaction chamber 210, the exhaust pipe 300 extracts the gas in the reaction chamber 210 to maintain or adjust the gas pressure and temperature in the reaction chamber 210, and discharges the waste gas formed by the reaction, so as to provide a suitable reaction environment for the next stage of reaction in the reaction chamber 210.

[0058] The embodiments of the utility model are described in detail above in conjunction with the accompanying drawings, but the utility model is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the utility model. In addition, the embodiments of the utility model and the features in the embodiments can be combined with each other without conflict.

Claims

1. Boron diffusion reaction intake system, characterized in that: include: A boron source air intake assembly, comprising a first air intake pipe, wherein two ends of the first air intake pipe respectively form a first air intake port and a first air outlet, wherein the first air intake port is used to introduce the boron source, and the first air outlet is used to directly connect to the reaction chamber; The reaction air inlet assembly includes at least one second air inlet pipe, the two ends of the second air inlet pipe have a second air inlet and a second air outlet, the second air inlet is used to introduce oxygen or nitrogen, the second air outlet is used to connect to the reaction chamber, and the second air inlet pipe is isolated from the first air inlet pipe.

2. The boron diffusion reaction intake system according to claim 1, characterized in that: The reaction gas inlet assembly comprises two second gas inlet pipes, and the two second gas inlet pipes are used to introduce oxygen and nitrogen respectively; The reaction air intake assembly further includes a mixed air intake pipe, the second air outlets of the two second air intake pipes are both connected to one end of the mixed air intake pipe, and the other end of the mixed air intake pipe is used to communicate with the reaction chamber.

3. The boron diffusion reaction intake system according to claim 1, characterized in that: The reaction air intake assembly includes three second air intake pipes, which are respectively used to introduce nitrogen, oxygen of a first concentration, and oxygen of a second concentration, and the second air outlets of the three second air intake pipes are all used to directly connect to the reaction chamber.

4. The boron diffusion reaction intake system according to claim 1, characterized in that: The reaction gas inlet assembly includes three second gas inlet pipes, and the three second gas inlet pipes are used to introduce nitrogen, oxygen of a first concentration, and oxygen of a second concentration respectively; The reaction air intake assembly further includes a mixing air intake pipe, the second air outlets of the three second air intake pipes are all connected to one end of the mixing air intake pipe, and the other end of the mixing air intake pipe is used to communicate with the reaction chamber.

5. The boron diffusion reaction intake system according to claim 2 or 4, characterized in that: The first air inlet pipe is connected to a first one-way valve to limit the boron source from flowing from the first air inlet to the reaction chamber, and the mixed air inlet pipe is connected to a second one-way valve to limit the oxygen or nitrogen from flowing from the second air inlet to the reaction chamber.

6. The boron diffusion reaction intake system according to claim 1, characterized in that: The first air inlet pipe and each of the second air inlet pipes are provided with a flow meter.

7. The boron diffusion reaction intake system according to claim 1, characterized in that: The first air intake pipe is connected to a first valve, and the first valve is used to open and close the first air intake pipe. Each of the second air intake pipes is connected to a second valve, and the second valve is used to open and close the corresponding second air intake pipe.

8. A reaction device, characterized in that: include: The boron diffusion reaction intake system according to any one of claims 1 to 7; A reaction furnace comprises a furnace body, wherein a reaction chamber is provided inside the furnace body, and the furnace body has an air inlet portion, one end of the first air inlet pipe is connected to the air inlet portion so that the first air outlet is connected to the reaction chamber, and one end of the second air inlet pipe can ventilate the reaction chamber through the air inlet portion.

9. The reaction device according to claim 8, characterized in that: The air inlet is located at the peripheral side of the furnace body, or the furnace body further has an air outlet, and the air inlet and the air outlet are respectively located at two opposite ends of the furnace body; The reaction equipment further comprises an exhaust pipe, which is connected to the gas outlet and is used to extract gas from the reaction chamber.

10. The reaction device according to claim 8, characterized in that: The height of the first air outlet is higher than that of the second air outlet.

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