Full-automatic rework piece cleaning system
By designing a fully automatic reworking sheet cleaning system, using multi-process cleaning sections and transfer devices to process different types of reworking sheets, the problem of different types of reworking sheets in the existing technology requires different cleaning systems, and the efficient cleaning and production efficiency improvement is achieved.
Patent Information
- Application Number
- CN202420728775.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-10
- Publication Date
- 2025-04-04
- Estimated Expiration
- 2034-04-10
AI Technical Summary
When handling different types of rework sheets, different cleaning systems need to be set up for different types, resulting in low production capacity and high production costs.
A fully automatic reworking sheet cleaning system is designed, including multiple process cleaning sections and transfer devices, which can automatically handle different types of reworking sheets, and achieve multifunctional cleaning through alkaline liquids, acid liquids and velvet making or alkaline throwing processes.
It realizes efficient cleaning of different types of reworked sheets without setting up different cleaning systems, which improves production capacity and reduces production costs, and can directly make velvet or alkali throws on the reworked sheets, further improving production efficiency.
Smart Images
Figure CN222720349U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of battery processing, and more specifically, to a full-automatic rework sheet cleaning system. Background Art
[0002] In the Topcon battery cell production process, different types of "defective cells" will be produced due to process, equipment and human factors. If such defective cells are transmitted according to the normal process flow, the efficiency and yield of the battery cells will be seriously affected, resulting in serious waste of resources. In order to avoid such situations, it is necessary to recycle the defective cells produced in the production process. Such defective cells are generally called rework cells in this field.
[0003] However, there are still some shortcomings in the current treatment of reworked sheets. For example, different cleaning systems need to be used for cleaning different types of reworked sheets, resulting in low production capacity and increased production costs. Utility Model Content
[0004] In view of this, the utility model provides a fully automatic rework sheet cleaning system, which can clean different types of rework sheets, effectively improve production capacity and reduce production costs.
[0005] The utility model provides a fully automatic rework sheet cleaning system, comprising: a first front cleaning tank, the first front cleaning tank comprising an alkaline liquid for pre-treating a class of rework sheets, a class of rework sheets and a class of rework sheets; a first process cleaning section, arranged downstream of the first front cleaning tank, the first process cleaning section being used to clean the class of rework sheets into class of rework sheets; a second process cleaning section, arranged downstream of the first process cleaning section, the second process cleaning section being used to clean the class of rework sheets into class of rework sheets; a third process cleaning section, arranged downstream of the second process cleaning section, the third process cleaning section being used to clean, and perform velvet making or alkali polishing on the class of rework sheets; a transfer device, the transfer device having a working state, in which the transfer device at least partially overlaps with at least one of the first front cleaning tank, the first process cleaning section, the second process cleaning section and the third process cleaning section.
[0006] Optionally, the first process cleaning section includes a first water tank, a first acid tank, a second water tank, a first post-cleaning tank and a third water tank arranged in sequence; wherein the first acid tank includes an acidic liquid for washing away silicon nitride on three types of rework wafers, and the first post-cleaning tank includes an alkaline liquid for neutralizing the acidic liquid brought out by the first acid tank and washing away the attachments of silicon nitride in the first acid tank.
[0007] Optionally, the first acid tank includes hydrofluoric acid solution and ozone water, and the first post-cleaning tank includes hydrogen peroxide and potassium hydroxide solution or sodium hydroxide solution.
[0008] Optionally, the second process cleaning section includes a second acid tank, a fourth water tank, a first alkaline tank, a fifth water tank, a second post-cleaning tank and a sixth water tank arranged in sequence; wherein the second acid tank includes an acidic liquid for washing away the oxide layer on the second type of reworked wafer, the first alkaline tank includes an alkaline liquid and additives for washing away the tunnel oxide polysilicon on the second type of reworked wafer, and the second post-cleaning tank includes an alkaline liquid for washing away the additive brought out by the first alkaline tank.
[0009] Optionally, the second acid tank includes a hydrofluoric acid solution, the first alkali tank includes a potassium hydroxide solution or a sodium hydroxide solution, a texturing additive or an alkali polishing additive, and the second post-cleaning tank includes hydrogen peroxide and a potassium hydroxide solution or a sodium hydroxide solution.
[0010] Optionally, the second process cleaning section further includes a first alkali throwing tank and a seventh water tank which are sequentially arranged between the fifth water tank and the second post-cleaning tank.
[0011] Optionally, the third process cleaning section includes a second front cleaning tank, an eighth water tank, a texturing tank, a ninth water tank, a third post-cleaning tank, a tenth water tank, a third acid tank, an eleventh water tank, a slow pulling tank and a drying tank which are arranged in sequence; wherein the second front cleaning tank includes an alkaline liquid for pre-treating a class of reworked sheets, the texturing tank includes an alkaline liquid and an additive for texturing a class of reworked sheets, the third post-cleaning tank includes an alkaline liquid for washing away the additives brought out by the texturing tank, the third acid tank includes an alkaline liquid for neutralizing the alkaline liquid brought out by the third post-cleaning tank, and an acidic liquid for washing away the oxide layer on a class of reworked sheets.
[0012] Optionally, the second front cleaning tank includes hydrogen peroxide and potassium hydroxide solution or sodium hydroxide solution, the texturing tank includes texturing additives and potassium hydroxide solution or sodium hydroxide solution, the third post-cleaning tank includes hydrogen peroxide and potassium hydroxide solution or sodium hydroxide solution, and the third acid tank includes hydrofluoric acid solution.
[0013] Optionally, the third process cleaning section includes a second front cleaning tank, an eighth water tank, an alkali polishing tank, a ninth water tank, a third post-cleaning tank, a tenth water tank, a third acid tank, an eleventh water tank, a slow pulling tank and a drying tank which are arranged in sequence; wherein the second front cleaning tank includes an alkaline liquid for pre-treating a class of reworked sheets, the alkali polishing tank includes an alkaline liquid and an additive for alkali polishing a class of reworked sheets, the third post-cleaning tank includes an alkaline liquid for washing away the additive brought out by the alkali polishing tank, the third acid tank includes an acidic liquid for neutralizing the alkaline liquid brought out by the third post-cleaning tank and washing away the oxide layer on the class of reworked sheets.
[0014] Optionally, the fully automatic rework sheet cleaning system includes multiple tanks, including water tanks; a bubbling mechanism and a circulation mechanism are provided in each tank, and an overflow port or an overflow pipe is provided in each water tank.
[0015] Compared with the prior art, the fully automatic rework sheet cleaning system provided by the utility model achieves at least the following beneficial effects:
[0016] The fully automatic rework sheet cleaning system provided by the utility model can realize the cleaning of different types of rework sheets, without setting up different cleaning systems for different rework sheets, effectively improving the cleaning efficiency of rework sheets, effectively improving production capacity, and reducing production costs. At the same time, the third process cleaning section is used to clean a type of rework sheets, as well as to perform velvet or alkali polishing, that is, the fully automatic rework sheet cleaning system provided by the utility model can directly perform velvet or alkali polishing on the rework sheets, so that the subsequent rework sheets can be directly put into production, effectively improving production capacity and reducing production costs.
[0017] Of course, any product implementing the present utility model does not necessarily need to achieve all of the above-mentioned technical effects at the same time.
[0018] Other features and advantages of the present invention will become apparent from the following detailed description of exemplary embodiments of the present invention with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the present invention and, together with the description, serve to explain the principles of the present invention.
[0020] Figure 1 A schematic diagram of the structure of a fully automatic rework sheet cleaning system provided in this application;
[0021] Figure 2 A schematic diagram of the structure of another fully automatic rework wafer cleaning system provided in this application;
[0022] Figure 3 A schematic diagram of the structure of another fully automatic rework wafer cleaning system provided in this application. DETAILED DESCRIPTION
[0023] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that unless otherwise specifically stated, the relative arrangement of components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention.
[0024] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the present invention, its application, or uses.
[0025] Technologies, methods, and systems known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and systems should be considered part of the specification.
[0026] In all examples shown and discussed herein, any specific values should be interpreted as merely exemplary and not limiting. Therefore, other examples of the exemplary embodiments may have different values.
[0027] It should be noted that like reference numerals and letters refer to similar items in the following figures, and therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.
[0028] Figure 1 This is a schematic diagram of the structure of a fully automatic rework sheet cleaning system provided in this application, refer to Figure 1 , this embodiment provides a fully automatic rework sheet cleaning system, the fully automatic rework sheet cleaning system comprises: a first front cleaning tank 101, the first front cleaning tank 100 comprises an alkaline liquid for pre-treating the first type of rework sheet, the second type of rework sheet and the third type of rework sheet;
[0029] The first process cleaning section 200 is disposed downstream of the first front cleaning tank 100, and the first process cleaning section 200 is used to clean the third-type reworked wafers into second-type reworked wafers;
[0030] The second process cleaning section 300 is disposed downstream of the first process cleaning section 200, and the second process cleaning section 300 is used to clean the second type of reworked wafers into the first type of reworked wafers;
[0031] The third process cleaning section 400 is disposed downstream of the second process cleaning section 300. The third process cleaning section 400 is used to clean a type of reworked wafers and perform texturing or alkali polishing.
[0032] A transfer device (not shown in the figure), the transfer device has a working state, in which the transfer device at least partially overlaps with at least one of the first front cleaning tank, the first process cleaning section, the second process cleaning section and the third process cleaning section.
[0033] Specifically, in the production process of Topcon solar cells, different types of reworked wafers will be produced due to process, equipment and human factors, including Class I reworked wafers, Class II reworked wafers and Class III reworked wafers. For example, reworked wafers directly acting on the etched surface of silicon wafers after texturing or alkali polishing of silicon wafers, diffusion on the etched surface of silicon wafers, laser after diffusion on the etched surface of silicon wafers, etc. are collectively referred to as Class I reworked wafers; reworked wafers with single or multi-layer oxy-silicon, ALD process on oxy-silicon, and laser process on oxy-silicon on the etched surface of silicon wafers are called Class II reworked wafers; reworked wafers with silicon nitride plated on oxy-silicon polysilicon on the etched surface of silicon wafers are called Class III reworked wafers.
[0034] The fully automatic rework sheet cleaning system provided in this embodiment includes a first front cleaning tank 101, a first process cleaning section 200, a second process cleaning section 300 and a third process cleaning section 400. Among them, the first front cleaning tank 100 includes a section for pre-processing a class of rework sheets, a class of rework sheets and a class of rework sheets. The first process cleaning section 200 is arranged downstream of the first front cleaning tank 100, and the first process cleaning section 200 is used to clean the class of rework sheets into class of rework sheets. The second process cleaning section 300 is arranged downstream of the first process cleaning section 200, and the second process cleaning section 300 is used to clean the class of rework sheets into class of rework sheets. The third process cleaning section 400 is arranged downstream of the second process cleaning section 300, and the third process cleaning section 400 is used to clean, and to perform velvet or alkali polishing on a class of rework sheets. The fully automatic rework sheet cleaning system provided in this embodiment also includes a transfer device, which has a working state. In the working state, the transfer device at least partially overlaps with at least one of the first front cleaning tank, the first process cleaning section, the second process cleaning section and the third process cleaning section, that is, in the working state, the transfer device can be used to take, move and place the rework sheets in the first front cleaning tank, the first process cleaning section, the second process cleaning section and the third process cleaning section.
[0035] In the specific implementation process, when it is necessary to clean a type of reworked sheet, the type of reworked sheet can be placed in the first front cleaning tank 101 and the third process cleaning section 400 in sequence through the transfer device. When it is necessary to clean a type of reworked sheet, the type of reworked sheet can be placed in the first front cleaning tank 101, the second process cleaning section 300 and the third process cleaning section 400 in sequence through the transfer device. When it is necessary to clean a type of reworked sheet, the type of reworked sheet can be placed in the first front cleaning tank 101, the first process cleaning section 200, the second process cleaning section 300 and the third process cleaning section 400 in sequence through the transfer device. The fully automatic reworked sheet cleaning system provided in this embodiment can realize the cleaning of different types of reworked sheets without setting different cleaning systems for different reworked sheets, effectively improving the cleaning efficiency of the reworked sheets, effectively improving the production capacity, and reducing the production cost.
[0036] At the same time, the third process cleaning section 400 is used to clean, texturize or alkali polish a type of reworked wafers. That is, the fully automatic reworked wafer cleaning system provided in this embodiment can directly perform texturizing or alkali polishing on the reworked wafers, so that subsequent reworked wafers can be directly put into production, effectively improving production capacity and reducing production costs.
[0037] Optionally, in some optional embodiments, the transfer device may include a robot, which places the flower basket loaded with reworked sheets in the first front cleaning tank 101, the first process cleaning section 200, the second process cleaning section 300 or the third process cleaning section 400. After processing, the robot can also be used to take the flower basket loaded with reworked sheets out of the first front cleaning tank 101, the first process cleaning section 200, the second process cleaning section 300 or the third process cleaning section 400, and the movement of the flower basket loaded with reworked sheets can be achieved by the robot.
[0038] It should be noted that when the fully automatic rework wafer cleaning system provided in this embodiment cleans different types of rework wafers, the first front cleaning tank 101 needs to be re-prepared with liquid to avoid cross-influence of impurities on different types of rework wafers.
[0039] Optionally, the concentration of potassium hydroxide solution or sodium hydroxide solution in the first pre-cleaning tank 101 is 0.1-1%, the concentration of hydrogen peroxide is 10-20%, the temperature in the first pre-cleaning tank 101 is 55-65°C, and the cleaning time of the reworked sheets in the first pre-cleaning tank 101 is 60-120s, which can achieve pre-cleaning of all reworked sheets, wash away surface dirt, and evenly attach oxygen radicals to the reworked sheets, making subsequent reactions more uniform.
[0040] Figure 2 Another fully automatic rework cleaning system provided in this application is shown in FIG. Figure 2 In some optional embodiments, the first process cleaning section 200 includes a first water tank 201, a first acid tank 202, a second water tank 203, a first post-cleaning tank 204 and a third water tank 205 arranged in sequence;
[0041] The first acid tank 202 includes an acidic liquid for washing away silicon nitride on the three types of reworked wafers, and the first post-cleaning tank 204 includes an alkaline liquid for neutralizing the acidic liquid brought out by the first acid tank 202 and washing away the attachments of silicon nitride in the first acid tank 202 .
[0042] Specifically, the first process cleaning section 200 includes a first water tank 201, a first acid tank 202, a second water tank 203, a first post-cleaning tank 204 and a third water tank 205, which are arranged in sequence. Among them, the first acid tank 202 includes an acidic liquid for washing away silicon nitride on the third-category rework wafer, so that the third-category rework wafer is cleaned into a second-category rework wafer. The first post-cleaning tank 204 includes an alkaline liquid for neutralizing the acidic liquid brought out by the first acid tank 202 and washing away the attachments of silicon nitride in the first acid tank 202. Therefore, the first process cleaning section 200 can realize the cleaning of the third-category rework wafer into the second-category rework wafer.
[0043] Continue to refer Figure 2In some optional embodiments, the first acid tank 202 includes a hydrofluoric acid solution and ozone water, and the first acid tank 202 can wash away the silicon nitride on the Class III rework wafers, so that the Class III rework wafers are cleaned into Class II rework wafers. The first post-cleaning tank 204 includes hydrogen peroxide and a potassium hydroxide solution or a sodium hydroxide solution, which can neutralize the acidic liquid brought out by the first acid tank 202 and wash away the silicon nitride attached to the first acid tank 202.
[0044] Exemplarily, the concentration of the hydrofluoric acid solution in the first acid tank 202 is 10-30%, the ozone concentration in the ozone water is 30-40ppm, the temperature in the first acid tank 202 is 25-40°C, and the cleaning time of the three types of reworked sheets in the first acid tank 202 is 300-600s, so that the silicon nitride on the three types of reworked sheets can be washed away, so that the three types of reworked sheets are cleaned into the second types of reworked sheets. The concentration of the potassium hydroxide solution or the sodium hydroxide solution in the first post-cleaning tank 204 is 0.1-1%, the concentration of the hydrogen peroxide is 10-20%, the temperature in the first post-cleaning tank 204 is 55-65°C, and the cleaning time of the reworked sheets in the first post-cleaning tank 204 is 60-180s, which can neutralize the acidic liquid brought out by the first acid tank 202 and wash away the silicon nitride attached to the first acid tank 202.
[0045] It should be noted that this embodiment exemplarily shows a setting method of the acid solution in the first acid tank 202 and a setting method of the alkali solution in the first post-cleaning tank 204. In other embodiments of the utility model, the acid solution in the first acid tank 202 and the alkali solution in the first post-cleaning tank 204 can also be adjusted according to needs, and the utility model will not elaborate on them here.
[0046] Continue to refer Figure 2 In some optional embodiments, the second process cleaning section 300 includes a second acid tank 301, a fourth water tank 302, a first alkali tank 303, a fifth water tank 304, a second post-cleaning tank 305 and a sixth water tank 306 which are arranged in sequence;
[0047] Among them, the second acid tank 301 includes an acidic liquid for washing away the oxide layer on the second type of reworked wafer, the first alkaline tank 303 includes an alkaline liquid and additives for washing away the tunnel oxide polysilicon on the second type of reworked wafer, and the second post-cleaning tank 305 includes an alkaline liquid for washing away the additives brought out by the first alkaline tank 303.
[0048] Specifically, the second process cleaning section 300 includes a second acid tank 301, a fourth water tank 302, a first alkali tank 303, a fifth water tank 304, a second post-cleaning tank 305 and a sixth water tank 306, which are arranged in sequence. Among them, the second acid tank 301 includes an acidic liquid for washing away the oxide layer on the second-class reworked wafer, so that the second acid tank 301 can wash away the oxide layer on the second-class reworked wafer, and the oxide layer includes but is not limited to phosphate glass, borate glass, aluminum oxide, silicon oxide, etc. The first alkali tank 303 includes an alkaline liquid and an additive for washing away the halogenated polysilicon on the second-class reworked wafer, so that the first alkali tank 303 can wash away the halogenated polysilicon on the second-class reworked wafer, thereby cleaning the second-class reworked wafer into a first-class reworked wafer. The second post-cleaning tank 305 includes an alkaline liquid for washing away the additives brought out by the first alkali tank 303, and can wash away the additives brought out by the first alkali tank 303. Therefore, the second process cleaning section 300 can clean the second type of reworked wafers into the first type of reworked wafers.
[0049] Continue to refer Figure 2 In some optional embodiments, the second acid tank 301 includes a hydrofluoric acid solution, and the second acid tank 301 can wash away the oxide layer on the Class II reworked wafer, and the oxide layer includes but is not limited to phosphate glass, borate glass, aluminum oxide, silicon oxide, etc. The first alkali tank 303 includes a potassium hydroxide solution or a sodium hydroxide solution, a texturing additive or an alkali polishing additive, and the first alkali tank 303 can wash away the tunnel oxide polysilicon on the Class II reworked wafer, thereby cleaning the Class II reworked wafer into a Class I reworked wafer. The second post-cleaning tank 305 includes hydrogen peroxide and a potassium hydroxide solution or a sodium hydroxide solution, which can wash away the additives brought out by the first alkali tank 303.
[0050] Exemplarily, the concentration of the hydrofluoric acid solution in the second acid tank 301 is 10-30%, the temperature in the first acid tank 202 is 25-40°C, the cleaning time of the Class III reworked wafer in the first acid tank 202 is 60-180s, and the second acid tank 301 can wash away the oxide layer on the Class II reworked wafer, and the oxide layer includes but is not limited to phosphate glass, borate glass, aluminum oxide, silicon oxide, etc. The concentration of the potassium hydroxide solution or sodium hydroxide solution in the first alkali tank 303 is 2-3%, the texturing or alkali polishing additive is 0.2-0.5%, the temperature in the first alkali tank 303 is 55-65°C, and the cleaning time of the reworked wafer in the first alkali tank 303 is 100-300s. The first alkali tank 303 can wash away the tunnel oxide polysilicon on the Class II reworked wafer, thereby cleaning the Class II reworked wafer into a Class I reworked wafer. The concentration of potassium hydroxide solution or sodium hydroxide solution in the second post-cleaning tank 305 is 0.1-1%, the concentration of hydrogen peroxide is 10-20%, the temperature in the first alkali tank 303 is 55-65°C, and the reworked sheet is cleaned for 60-180s in the second post-cleaning tank 305 to wash away the additives brought out of the first alkali tank 303.
[0051] It should be noted that this embodiment exemplarily shows a setting method of the acid solution in the second acid tank 301, a setting method of the alkali solution in the first alkali tank 303, and a setting method of the alkali solution in the second post-cleaning tank 305. In other embodiments of the utility model, the acid solution in the second acid tank 301, the alkali solution in the first alkali tank 303, and the alkali solution in the second post-cleaning tank 305 can also be adjusted according to needs, and the utility model will not go into details here.
[0052] Figure 3 A structural diagram of another fully automatic rework sheet cleaning system provided in this application, see Figure 3 In some optional embodiments, the second process cleaning section 300 further includes a first alkali throwing tank 307 and a seventh water tank 308 which are sequentially arranged between the fifth water tank 304 and the second post-cleaning tank 305 .
[0053] Specifically, when the Class II reworked wafer has multiple layers of polysilicon with tunneling oxide on the etching surface of the silicon wafer, the first alkali polishing tank 307 and the seventh alkali tank 308 are arranged between the fifth water tank 304 and the second post-cleaning tank 305 in the second process cleaning section 300. The first alkali tank 303 can wash away the multiple layers of polysilicon with tunneling oxide on the Class II reworked wafer, thereby cleaning the Class II reworked wafer into a Class I reworked wafer.
[0054] Continue to refer Figure 2 In some optional embodiments, the third process cleaning section 400 includes a second front cleaning tank 401, an eighth water tank 402, a texturing tank 403, a ninth water tank 404, a third post-cleaning tank 405, a tenth water tank 406, a third acid tank 407, an eleventh water tank 408, a slow pulling tank 409 and a drying tank 410 arranged in sequence;
[0055] Among them, the second front cleaning tank 401 includes an alkaline liquid for pre-treating a type of reworked wafers, the texturing tank 403 includes an alkaline liquid and additives for texturing a type of reworked wafers, the third post-cleaning tank 405 includes an alkaline liquid for washing away the additives brought out by the texturing tank 403, and the third acid tank 407 includes an acidic liquid for neutralizing the alkaline liquid brought out by the third post-cleaning tank 405 and washing away the oxide layer on the type of reworked wafers.
[0056] Specifically, the third process cleaning section 400 includes a second front cleaning tank 401, an eighth water tank 402, a velvet-making tank 403, a ninth water tank 404, a third rear cleaning tank 405, a tenth water tank 406, a third acid tank 407, an eleventh water tank 408, a slow pull tank 409 and a drying tank 410, which are arranged in sequence. Among them, the second front cleaning tank 401 includes an alkaline liquid for pre-treating a class of reworked sheets, which can be pre-cleaned on a class of reworked sheets to wash away surface dirt, and the oxygen radicals are uniformly attached to a class of reworked sheets, so that subsequent reactions are more uniform. The velvet-making tank 403 includes an alkaline liquid and additives for velveting a class of reworked sheets, and a velvet surface can be re-made on a class of reworked sheets. The third rear cleaning tank 405 includes an alkaline liquid for washing away additives brought out by the velvet-making tank 403, and can wash away additives brought out by the velvet-making tank 403. The third acid tank 407 includes an acidic liquid for neutralizing the alkaline liquid brought out by the third post-cleaning tank 405 and washing away the oxide layer on the reworked wafer. The alkaline liquid brought out by the third post-cleaning tank 405 and washing away the oxide layer on the reworked wafer can be neutralized. The slow pull tank 409 can remove the moisture formed by the velvet surface of the reworked wafer, making it easier to dry. Therefore, the third process cleaning section 400 can realize the cleaning and velveting of the reworked wafer.
[0057] Continue to refer Figure 2 In some optional embodiments, the second front cleaning tank 401 includes hydrogen peroxide and potassium hydroxide solution or sodium hydroxide solution, and the second front cleaning tank 401 is used to pre-treat a type of reworked wafers. The texturing tank 403 includes texturing additives and potassium hydroxide solution or sodium hydroxide solution, and the texturing tank 403 can realize the re-texturing of a type of reworked wafer. The third post-cleaning tank 405 includes hydrogen peroxide and potassium hydroxide solution or sodium hydroxide solution, and the third post-cleaning tank 405 can wash away the additives brought out by the texturing tank 403. The third acid tank 407 includes hydrofluoric acid solution, and the third acid tank 407 can be used to neutralize the alkaline liquid brought out by the third post-cleaning tank 405, and wash away the oxide layer on a type of reworked wafer.
[0058] Exemplarily, the concentration of potassium hydroxide solution or sodium hydroxide solution in the second pre-cleaning tank 401 is 0.1-1%, the concentration of hydrogen peroxide is 10-20%, the temperature in the second pre-cleaning tank 401 is 55-65°C, the reworked sheet is cleaned for 60-120s in the second pre-cleaning tank 401, and the second pre-cleaning tank 401 is used to pre-treat a class of reworked sheets to wash away surface dirt, so that the oxygen radicals are evenly attached to the class of reworked sheets, making subsequent reactions more uniform. The concentration of potassium hydroxide solution or sodium hydroxide solution in the texturing tank 403 is 2-3%, the concentration of texturing additives is 0.5-1.5%, the temperature in the texturing tank 403 is 55-65°C, the texturing time of the reworked sheet in the texturing tank 403 is 60-300s, and the texturing tank 403 can achieve the re-texturing of a class of reworked sheets into a velvet surface. The concentration of potassium hydroxide solution or sodium hydroxide solution in the third post-cleaning tank 405 is 0.1-1%, the concentration of hydrogen peroxide is 10-20%, the temperature in the third post-cleaning tank 405 is 55-65°C, the cleaning time of the reworked sheet in the third post-cleaning tank 405 is 60-180s, and the third post-cleaning tank 405 can wash away the additives brought out by the velvet making tank 403. The concentration of hydrofluoric acid solution in the third acid tank 407 is 1-10%, the temperature in the third acid tank 407 is room temperature, the cleaning time of the reworked sheet in the third acid tank 407 is 60-180s, and the third acid tank 407 can be used to neutralize the alkaline liquid brought out by the third post-cleaning tank 405, and wash away a type of oxide layer on the reworked sheet. The slow pulling tank 409 has a pulling speed of 2-5mm / s and a water temperature of 60-80°C, which can remove the moisture formed on the velvet surface of the reworked sheet and make it easier to dry. The temperature of the drying tank 410 is 90-100°C.
[0059] It should be noted that the present embodiment exemplarily shows a setting parameter of the second front cleaning tank 401, the texturing tank 403, the third post-cleaning tank 405, the third acid tank 407, the slow pulling tank 409 and the drying tank 410 in the third process cleaning section 400. In other embodiments of the present invention, the setting parameters of the second front cleaning tank 401, the texturing tank 403, the third post-cleaning tank 405, the third acid tank 407, the slow pulling tank 409 and the drying tank 410 in the third process cleaning section 400 can be adjusted according to actual needs, and the present invention will not elaborate on them here.
[0060] Continue to refer Figure 2 In some optional embodiments, the third process cleaning section 400 includes a second front cleaning tank 401, an eighth water tank 402, an alkali throwing tank 411, a ninth water tank 404, a third post-cleaning tank 405, a tenth water tank 406, a third acid tank 407, an eleventh water tank 408, a slow pulling tank 409 and a drying tank 410 arranged in sequence;
[0061] Among them, the second front cleaning tank 401 includes an alkaline liquid for pre-treating a type of reworked wafers, the alkali polishing tank 411 includes an alkaline liquid and additives for alkali polishing a type of reworked wafers, the third post-cleaning tank 405 includes an alkaline liquid for washing away the additives brought out by the alkali polishing tank 411, and the third acid tank 407 includes an acidic liquid for neutralizing the alkaline liquid brought out by the third post-cleaning tank 405 and washing away the oxide layer on the type of reworked wafers.
[0062] Specifically, the third process cleaning section 400 includes a second front cleaning tank 401, an eighth water tank 402, an alkali polishing tank 411, a ninth water tank 404, a third rear cleaning tank 405, a tenth water tank 406, a third acid tank 407, an eleventh water tank 408, a slow pull tank 409 and a drying tank 410, which are arranged in sequence. Among them, the second front cleaning tank 401 includes an alkaline liquid for pre-treating a class of reworked sheets, which can be pre-cleaned on a class of reworked sheets to wash away surface dirt, and the oxygen radicals are uniformly attached to a class of reworked sheets, so that subsequent reactions are more uniform. The alkali polishing tank 411 includes an alkaline liquid and an additive for alkali polishing a class of reworked sheets, and a class of reworked sheets can be made into alkali polished sheets. The third rear cleaning tank 405 includes an alkaline liquid for washing away the additives brought out by the alkali polishing tank 411, and the third rear cleaning tank 405 can wash away the additives brought out by the alkali polishing tank 411. The third acid tank 407 includes an acidic liquid for neutralizing the alkaline liquid brought out by the third post-cleaning tank 405 and washing away the oxide layer on the reworked wafer. The alkaline liquid brought out by the third post-cleaning tank 405 and washing away the oxide layer on the reworked wafer can be neutralized. The slow pull tank 409 can remove the moisture formed on the velvet surface of the reworked wafer, making it easier to dry. Thus, the third process cleaning section 400 can realize the cleaning and alkali polishing of the reworked wafer.
[0063] Continue to refer Figure 2 , in some optional embodiments, the fully automatic rework sheet cleaning system includes a plurality of tanks (100, 201-205, 301-306 and 401-410), the tanks including water tanks (201, 203, 205, 302, 304, 306, 402, 404, 406 and 408);
[0064] Each tank (100, 201-205, 301-306 and 401-410) is provided with a bubbling mechanism and a circulation mechanism, and each water tank (201, 203, 205, 302, 304, 306, 402, 404, 406 and 408) is provided with an overflow port or an overflow pipe.
[0065] Specifically, a bubbling mechanism and a circulation mechanism are provided in each slot in the fully automatic rework sheet cleaning system, which effectively improves the cleaning effect of each slot on the rework sheet. Optionally, a bubbling tube or a bubbler with a through hole can be provided in each slot in the fully automatic rework sheet cleaning system, and a main and auxiliary slots can be provided in each slot in the fully automatic rework sheet cleaning system, and the main and auxiliary slots are always circulated. Of course, in other embodiments of the utility model, the bubbling mechanism and the circulation mechanism can also be other structures, and the utility model will not be repeated here one by one.
[0066] Each water tank is provided with an overflow port or an overflow pipe, that is, the water tank is always overflowing, which effectively improves the cleaning effect of each water tank on the reworked sheets.
[0067] It can be seen from the above embodiments that the fully automatic rework sheet cleaning system provided by the utility model achieves at least the following beneficial effects:
[0068] The fully automatic rework sheet cleaning system provided by the utility model can realize the cleaning of different types of rework sheets, without setting up different cleaning systems for different rework sheets, effectively improving the cleaning efficiency of rework sheets, effectively improving production capacity, and reducing production costs. At the same time, the third process cleaning section is used to clean a type of rework sheets, as well as to perform velvet or alkali polishing, that is, the fully automatic rework sheet cleaning system provided by the utility model can directly perform velvet or alkali polishing on the rework sheets, so that the subsequent rework sheets can be directly put into production, effectively improving production capacity and reducing production costs.
[0069] Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the present invention. It should be understood by those skilled in the art that the above embodiments may be modified without departing from the scope and spirit of the present invention. The scope of the present invention is defined by the appended claims.
Claims
1. A fully automatic rework sheet cleaning system, characterized in that: include: A first pre-cleaning tank, the first pre-cleaning tank comprising an alkaline liquid for pre-treating the first-category reworked wafer, the second-category reworked wafer, and the third-category reworked wafer; A first process cleaning section, disposed downstream of the first front cleaning tank, the first process cleaning section being used to clean the third type of reworked wafers into the second type of reworked wafers; A second process cleaning section, disposed downstream of the first process cleaning section, the second process cleaning section being used to clean the second type of reworked wafers into the first type of reworked wafers; A third process cleaning section is arranged downstream of the second process cleaning section, and the third process cleaning section is used to clean the first type of reworked wafers and perform texturing or alkali polishing; A transfer device has a working state, in which the transfer device at least partially overlaps with at least one of the first front cleaning tank, the first process cleaning section, the second process cleaning section, and the third process cleaning section.
2. The fully automatic rework sheet cleaning system according to claim 1, characterized in that: The first process cleaning section includes a first water tank, a first acid tank, a second water tank, a first post-cleaning tank and a third water tank arranged in sequence; The first acid tank includes an acidic liquid for washing away silicon nitride on the three types of reworked wafers, and the first post-cleaning tank includes an alkaline liquid for neutralizing the acidic liquid brought out by the first acid tank and washing away silicon nitride attachments in the first acid tank.
3. The fully automatic rework sheet cleaning system according to claim 2, characterized in that: The first acid tank includes hydrofluoric acid solution and ozone water, and the first post-cleaning tank includes hydrogen peroxide and potassium hydroxide solution or sodium hydroxide solution.
4. The fully automatic rework sheet cleaning system according to claim 1, characterized in that: The second process cleaning section includes a second acid tank, a fourth water tank, a first alkali tank, a fifth water tank, a second post-cleaning tank and a sixth water tank arranged in sequence; Among them, the second acid tank includes an acidic liquid for washing away the oxide layer on the second type of reworked wafer, the first alkaline tank includes an alkaline liquid and additives for washing away the tunnel oxide polysilicon on the second type of reworked wafer, and the second post-cleaning tank includes an alkaline liquid for washing away the additive brought out by the first alkaline tank.
5. The fully automatic rework sheet cleaning system according to claim 4, characterized in that: The second acid tank includes a hydrofluoric acid solution, the first alkali tank includes a potassium hydroxide solution or a sodium hydroxide solution, a texturing additive or an alkali polishing additive, and the second post-cleaning tank includes hydrogen peroxide and a potassium hydroxide solution or a sodium hydroxide solution.
6. The fully automatic rework sheet cleaning system according to claim 4, characterized in that: The second process cleaning section also includes a first alkali throwing tank and a seventh water tank which are sequentially arranged between the fifth water tank and the second post-cleaning tank.
7. The fully automatic rework sheet cleaning system according to claim 1, characterized in that: The third process cleaning section includes a second front cleaning tank, an eighth water tank, a texturing tank, a ninth water tank, a third post-cleaning tank, a tenth water tank, a third acid tank, an eleventh water tank, a slow pulling tank and a drying tank which are arranged in sequence; Among them, the second pre-cleaning tank includes an alkaline liquid for pre-treating the type of reworked sheets, the texturing tank includes an alkaline liquid and additives for texturing the type of reworked sheets, the third post-cleaning tank includes an alkaline liquid for washing away the additives brought out by the texturing tank, and the third acid tank includes an acidic liquid for neutralizing the alkaline liquid brought out by the third post-cleaning tank and washing away the oxide layer on the type of reworked sheets.
8. The fully automatic rework sheet cleaning system according to claim 7, characterized in that: The second front cleaning tank includes hydrogen peroxide and potassium hydroxide solution or sodium hydroxide solution, the texturing tank includes texturing additives and potassium hydroxide solution or sodium hydroxide solution, the third post-cleaning tank includes hydrogen peroxide and potassium hydroxide solution or sodium hydroxide solution, and the third acid tank includes hydrofluoric acid solution.
9. The fully automatic rework sheet cleaning system according to claim 1, characterized in that: The third process cleaning section includes a second front cleaning tank, an eighth water tank, an alkali throwing tank, a ninth water tank, a third post-cleaning tank, a tenth water tank, a third acid tank, an eleventh water tank, a slow pulling tank and a drying tank arranged in sequence; Among them, the second front cleaning tank includes an alkaline liquid for pre-treating the type of reworked wafers, the alkali polishing tank includes an alkaline liquid and additives for alkali polishing the type of reworked wafers, the third post-cleaning tank includes an alkaline liquid for washing away the additives brought out by the alkali polishing tank, and the third acid tank includes an acidic liquid for neutralizing the alkaline liquid brought out by the third post-cleaning tank and washing away the oxide layer on the type of reworked wafers.
10. The fully automatic rework sheet cleaning system according to claim 1, characterized in that: The fully automatic rework sheet cleaning system comprises a plurality of tanks, wherein the tanks include water tanks; Each of the tanks is provided with a bubbling mechanism and a circulation mechanism, and each of the water tanks is provided with an overflow port or an overflow pipe.