Horizontal array high-efficiency semiconductor laser
By embedded welding of CD diamond heat sink on ceramic substrates, the problems of small welding area and oxide layer blocking heat dissipation in existing semiconductor laser packaging solutions are solved, better heat dissipation capacity and stability are achieved, and the service life of the equipment is extended.
Patent Information
- Application Number
- CN202421689599.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-17
- Publication Date
- 2025-04-11
- Estimated Expiration
- 2034-07-17
AI Technical Summary
In the package scheme of existing semiconductor lasers, the soldering area is small and the oxide layer blocks heat dissipation, resulting in low operating stability.
Embedded welding technology is adopted to weld the CD diamond heat sink in the U-shaped installation groove of the ceramic substrate to increase the welding area and make the oxide layer distributed on both sides of the groove to reduce the impact on heat dissipation.
It improves the package heat dissipation capability and stability of semiconductor lasers, achieves high efficiency and reliable operation at high temperatures, and extends the service life of the equipment.
Smart Images
Figure CN222749868U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of semiconductor lasers, and in particular relates to a horizontal array high-efficiency semiconductor laser. Background Art
[0002] Semiconductor lasers are lasers that use semiconductor materials as working substances. They are small in size, long in life, and can be pumped by simply injecting current. Their operating voltage and current are compatible with integrated circuits, so they can be monolithically integrated with them. The packaging structure of semiconductor lasers can be divided into horizontal array lasers and stacked array lasers.
[0003] The conventional packaging solution inside the semiconductor laser adopts welding the heat sink to the metallized pattern surface of the AlN ceramic sheet. The welding area is small, and the oxide layer during the welding process blocks the heat dissipation of the chip and the ceramic sheet, thereby reducing the stability of the semiconductor laser operation. Utility Model Content
[0004] The utility model aims to provide a horizontal array high-efficiency semiconductor laser, aiming to solve the problems raised in the above background technology.
[0005] In order to achieve the above purpose, the utility model provides the following technical solutions:
[0006] A horizontal array high-efficiency semiconductor laser comprises: an outer shell and a base, wherein the base is fixedly mounted on the bottom of the outer shell, a ceramic substrate is fixedly mounted inside the outer shell, a mounting groove is opened on the top of the ceramic substrate, the cross section of the mounting groove is set to be U-shaped, a heat sink is welded to the inner cavity of the mounting groove, and the heat sink is set to be CD diamond.
[0007] As a preferred solution of the utility model, a chip is welded in the middle part of every two heat sinks, the chip is configured as a Bar bar, and the heat sink and the Bar bar are welded using AuSn solder.
[0008] As a preferred solution of the utility model, the chip spacing is set to 0.4 mm, and the base is made of gold-plated oxygen-free copper.
[0009] As a preferred solution of the utility model, a ceramic piece is fixedly installed on the top of the base, and the ceramic piece is made of gold-plated aluminum nitride material.
[0010] As a preferred solution of the utility model, the bottom of the ceramic sheet is fixedly connected with an electrode insulating sheet, one end of the top of the electrode insulating sheet is provided with an LD positive electrode, and the other end of the top of the electrode insulating sheet is provided with an LD negative electrode.
[0011] As a preferred solution of the utility model, two mounting holes are respectively provided on the top of the LD positive electrode and the LD negative electrode and penetrate through to the bottom of the base.
[0012] As a preferred solution of the utility model, both ends of the outer shell are fixedly mounted with protective plates, the protective plates are made of gold-plated material, and a connecting terminal is fixedly connected to one side of the protective plate away from the outer shell.
[0013] Compared with the prior art, the beneficial effects of the utility model are:
[0014] This solution uses embedded welding technology to install the heat sink in the mounting groove of the ceramic substrate, replacing the traditional packaging solution of welding the heat sink on the top plane of the ceramic sheet. The plug-in welding method increases the welding area, so that the oxide layer generated during the welding process and subsequent working process is on both sides of the groove. The generation and thickening of the oxide layer has almost no effect on heat dissipation, thereby improving the packaging heat dissipation capacity and stability of the semiconductor laser, achieving high efficiency and reliability of the horizontal array semiconductor laser under high temperature operation, and extending the service life of the semiconductor laser. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. They are used together with the embodiments of the present invention to explain the present invention and do not constitute a limitation to the present invention.
[0016] In the attached picture:
[0017] Figure 1 It is a schematic diagram of the overall structure of the utility model;
[0018] Figure 2 It is an exploded view of the entire structure of the utility model;
[0019] Figure 3 It is a partial cross-sectional view of the structure of the utility model;
[0020] Figure 4 It is a partial stereogram of the structure of the utility model.
[0021] In the figure: 1. outer shell; 2. base; 3. ceramic substrate; 4. mounting groove; 5. heat sink; 6. chip; 7. ceramic sheet; 8. electrode insulating sheet; 9. LD positive electrode; 10. LD negative electrode; 11. mounting hole; 12. protective plate; 13. connecting terminal. DETAILED DESCRIPTION
[0022] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0023] Example
[0024] like Figures 1 to 4 As shown, the utility model provides a horizontal array high-efficiency semiconductor laser, comprising: an outer shell 1 and a base 2, the base 2 is fixedly installed at the bottom of the outer shell 1, a ceramic substrate 3 is fixedly installed inside the outer shell 1, a mounting groove 4 is opened on the top of the ceramic substrate 3, the cross-section of the mounting groove 4 is set to be U-shaped, and a heat sink 5 is welded to the inner cavity of the mounting groove 4, and the heat sink 5 is set to be CD diamond.
[0025] Specifically, a chip 6 is welded in the middle part of every two heat sinks 5, and the chip 6 is set as a Bar bar. The welding method of the heat sink 5 and the Bar bar adopts AuSn solder. The spacing of the chips 6 is set to 0.4mm. The base 2 is made of gold-plated oxygen-free copper. A ceramic sheet 7 is fixedly installed on the top of the base 2, and the ceramic sheet 7 is made of gold-plated aluminum nitride.
[0026] Furthermore, by providing the gold-plated oxygen-free copper base 2, it has a higher thermal conductivity, which further helps the semiconductor laser to dissipate heat better.
[0027] Specifically, an electrode insulating sheet 8 is fixedly connected to the bottom of the ceramic sheet 7, an LD positive electrode 9 is arranged at one end of the top of the electrode insulating sheet 8, and an LD negative electrode 10 is arranged at the other end of the top of the electrode insulating sheet 8. Two mounting holes 11 are respectively provided on the top of the LD positive electrode 9 and the LD negative electrode 10 and pass through the bottom of the base 2. Protective plates 12 are fixedly installed at both ends of the outer shell 1. The protective plates 12 are made of gold-plated material, and a connecting terminal 13 is fixedly connected to the side of the protective plate 12 away from the outer shell 1.
[0028] Furthermore, the protective plate 12 made of gold-plated material has certain reflective and insulating effects, which can help reduce the dissipation of heat generated by the laser when it is working in the surrounding environment, thereby helping to control the temperature and improve the stability and efficiency of the laser.
[0029] Working principle: Insert the heat sink 5 into the mounting groove 4 on the top of the ceramic substrate 3, and weld the heat sink 5 therein using welding technology. The oxide layer generated during the welding process is distributed on both sides of the U-shaped groove, and the bottom of the heat sink 5 is in direct contact with the ceramic substrate 3, thereby improving the heat dissipation efficiency of the heat sink 5 and the ceramic substrate 3. Then, the outer shell 1 is installed on the top of the base 2, and the protective plate 12 is installed at both ends of the outer shell 1, and connected to other components through the connecting terminals 13.
[0030] In summary, the overall beneficial effect is that by welding the heat sink 5 in the ceramic substrate 3 with the mounting groove 4, the semiconductor laser has a better heat dissipation capability, and the semiconductor laser has stability and reliability when working under high temperature conditions.
[0031] Finally, it should be noted that the above description is only a preferred embodiment of the utility model and is not intended to limit the utility model. Although the utility model is described in detail with reference to the above embodiments, those skilled in the art can still modify the technical solutions recorded in the above embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.
Claims
1. A horizontal array high-efficiency semiconductor laser, characterized in that: include: An outer shell (1) and a base (2), wherein the base (2) is fixedly mounted on the bottom of the outer shell (1), a ceramic substrate (3) is fixedly mounted inside the outer shell (1), a mounting groove (4) is provided on the top of the ceramic substrate (3), the mounting groove (4) has a U-shaped cross section, a heat sink (5) is welded to the inner cavity of the mounting groove (4), and the heat sink (5) is configured as a CD diamond.
2. A horizontal array high-efficiency semiconductor laser according to claim 1, characterized in that: A chip (6) is welded to the middle portion of each of the two heat sinks (5); the chip (6) is configured as a Bar strip; and the heat sink (5) and the Bar strip are welded using AuSn solder.
3. A horizontal array high-efficiency semiconductor laser according to claim 2, characterized in that: The chip (6) has a spacing of 0.4 mm, and the base (2) is made of gold-plated oxygen-free copper.
4. The horizontal array high-efficiency semiconductor laser according to claim 1, characterized in that: A ceramic sheet (7) is fixedly mounted on the top of the base (2), and the ceramic sheet (7) is made of gold-plated aluminum nitride material.
5. A horizontal array high-efficiency semiconductor laser according to claim 4, characterized in that: The bottom of the ceramic sheet (7) is fixedly connected to an electrode insulating sheet (8), one end of the top of the electrode insulating sheet (8) is provided with an LD positive electrode (9), and the other end of the top of the electrode insulating sheet (8) is provided with an LD negative electrode (10).
6. A horizontal array high-efficiency semiconductor laser according to claim 5, characterized in that: Two mounting holes (11) are respectively provided on the top of the LD positive electrode (9) and the LD negative electrode (10) and penetrate to the bottom of the base (2).
7. The horizontal array high-efficiency semiconductor laser according to claim 1, characterized in that: Both ends of the outer shell (1) are fixedly mounted with protective plates (12), the protective plates (12) are made of gold-plated material, and a connecting terminal (13) is fixedly connected to one side of the protective plate (12) away from the outer shell (1).