Chemical vapor deposition reaction chamber structure
By designing the intake pipe in the chemical vapor deposition reaction chamber and improving the gas distribution, the problem of uneven flow and temperature fields in the reaction chamber is solved, and the density of the silicon carbide coating and its binding force are improved.
Patent Information
- Application Number
- CN202421668984.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-15
- Publication Date
- 2025-04-18
- Estimated Expiration
- 2034-07-15
AI Technical Summary
In the existing chemical vapor deposition technology, the flow field and temperature field in the reaction chamber are uneven, resulting in few nucleation points, coarse grains, low density, and weak bonding force between the coating and the substrate.
A chemical vapor deposition reaction chamber structure is designed, including an intake pipe, a top plate, an insulation felt, a bottom plate, a deposition carrier table and a furnace chamber. By setting up an intake pipe, the gas is uniformly diffused into the cavity, and the distribution of the intake pipe and the air outlet in the furnace chamber is improved, and the uniformity of the aura and temperature field is improved.
Through this structure, the deposited coating increases nucleation points and grains are refined, and large particles are reduced, resulting in denser coatings and increased binding force with the substrate.
Smart Images
Figure CN222770954U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of chemical vapor deposition, in particular to a chemical vapor deposition reaction chamber structure. Background Art
[0002] Chemical vapor deposition (CVD) is a method of generating thin films by chemically reacting gaseous substances containing thin film elements on the substrate surface. This technology is widely used in the production of crystals, crystal films, whiskers, and polycrystalline / amorphous material films. Chemical vapor deposition technology is widely used in the semiconductor industry.
[0003] However, the existing CVD technology has the problem of poor deposition uniformity, which is mainly due to the non-uniformity of the flow field and temperature field in the reaction chamber. During the CVD process, the gaseous precursor is affected by the flow field and temperature gradient during the transportation and diffusion process in the reaction chamber, resulting in uneven deposition of the deposits. In particular, the formation of silicon carbide coatings is easily affected, with fewer nucleation points, coarse grains, and low coating density.
[0004] In addition, during the CVD process, the weak bonding between the silicon carbide coating and the graphite substrate results in a high surface roughness of the coating. This phenomenon not only affects the performance and stability of the coating, but also affects the overall performance of the device. Therefore, improving the deposition uniformity during the CVD process and improving the bonding between the silicon carbide coating and the substrate by improving the chemical vapor deposition reaction chamber structure is one of the current research focuses. Utility Model Content
[0005] In the prior art, chemical vapor deposition is prone to uneven flow and temperature fields in the furnace chamber, which will result in fewer nucleation points in the silicon carbide coating and coarser coating grains. The resulting coating will not be dense and will have more large particles. Therefore, it is necessary to provide a chemical vapor deposition reaction chamber structure to solve the above problems.
[0006] The utility model provides a chemical vapor deposition reaction chamber structure, which comprises an air inlet pipe, a top plate, a thermal insulation felt, a bottom plate, a deposition support platform and a furnace cavity, wherein the top plate, the furnace cavity, the bottom plate and the thermal insulation felt form a deposition space, a connecting hole is arranged in the middle of the top plate, the air inlet pipe passes through the connecting hole of the top plate, the air inlet pipe comprises a main air inlet and a plurality of sub-air inlets connected to the main air inlet, the plurality of sub-air inlets are evenly arranged, the thermal insulation felt is arranged inside the furnace cavity and connected to the bottom plate and the top plate, the deposition support platform is arranged in the furnace cavity and is used to place a deposition substrate, and an air outlet is arranged around the bottom plate.
[0007] In one implementation, side air inlets are also provided around the periphery of the top plate.
[0008] In one implementation, the deposition platform further includes a through hole disposed in the middle, and the through hole is used for exhaust.
[0009] In one implementation, the number of the thermal insulation felts is 12, and the 12 thermal insulation felts are arranged around the furnace cavity and are respectively abutted and fixed to the top plate and the bottom plate.
[0010] In one implementation, the cross-sections of the bottom plate, the top plate, and the air inlet pipe are circular.
[0011] In one implementation, the air inlet pipe further includes a diffuser disposed on the side, and the diffuser is disposed at an end of the air inlet pipe extending to the furnace cavity.
[0012] Beneficial effects: The chemical vapor deposition reaction chamber structure provided by the utility model allows the gas to diffuse evenly into the chamber by arranging an air inlet pipe, and improves the distribution of the air inlet pipe and the air outlet in the furnace chamber, so that the gas field and temperature field in the furnace chamber can diffuse more evenly, thereby making the deposited coating have more nucleation points, finer coating grains, and less large particles, and the resulting coating will be denser; improving the bonding strength between the coating and the substrate. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Figure 1 It is a cross-sectional schematic diagram of the chemical vapor deposition reaction chamber structure of the first embodiment of the utility model;
[0014] Figure 2 It is a cross-sectional schematic diagram of a chemical vapor deposition reaction chamber structure provided by a second embodiment of the utility model;
[0015] Figure 3 is a cross-sectional schematic diagram of a chemical vapor deposition reaction chamber structure provided by a third embodiment of the utility model;
[0016] Figure 4 yes Figure 1 The structural schematic diagram of the intake pipe shown;
[0017] Figure 5 yes Figure 1 A schematic diagram of the top plate structure from above shown;
[0018] Figure 6 yes Figure 1 A schematic diagram of the top view of the bottom plate shown;
[0019] Figure 7 yes Figure 1 A schematic diagram of the top view of the deposition support platform shown;
[0020] Among them, the symbols in the figure are as follows:
[0021] 10. Air inlet pipe; 11. Main air inlet; 12. Sub-air inlet; 13. Diffuser; 20. Top plate; 21. Connecting hole; 22. Side air inlet; 30. Insulation felt; 40. Bottom plate; 41. Air outlet; 50. Deposition support platform; 51. Through hole; 60. Furnace cavity.
[0022] The realization of the purpose, functional features and advantages of the utility model will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION
[0023] It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.
[0024] Those skilled in the art will appreciate that, unless expressly stated, the singular forms "one", "said", "above", and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present utility model refers to the presence of the features, integers, steps, operations, elements, units, modules, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, units, modules, components, and / or groups thereof. It should be understood that when we refer to an element as being "connected" or "coupled" to another element, it may be directly connected or coupled to the other element, or there may be intermediate elements. In addition, the "connection" or "coupling" used herein may include wireless connection or wireless coupling. The term "and / or" used herein includes all or any unit and all combinations of one or more associated listed items.
[0025] Those skilled in the art will understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as the general understanding of ordinary technicians in the field to which the utility model belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as here.
[0026] Combined with reference Figure 1 , Figure 4-7 , Figure 1 is a cross-sectional schematic diagram of the chemical vapor deposition reaction chamber structure of the first embodiment of the utility model, Figure 4 yes Figure 1 The schematic diagram of the structure of the intake pipe is shown in FIG. Figure 5 yes Figure 1 The top view of the top plate is shown in FIG. Figure 6 yes Figure 1 The schematic diagram of the top view of the bottom plate shown in FIG. Figure 7 yes Figure 1 A schematic diagram of the top view structure of the deposition support platform is shown.
[0027] The utility model provides a chemical vapor deposition reaction chamber structure, which includes an air inlet pipe 10, a top plate 20, a thermal insulation felt 30, a bottom plate 40, a deposition support platform 50 and a furnace cavity 60, wherein the top plate 20, the furnace cavity 60, the bottom plate 40 and the thermal insulation felt 30 surround a deposition space, a connecting hole 21 is arranged in the middle of the top plate 20, the air inlet pipe 10 passes through the connecting hole 21 of the top plate 20, the air inlet pipe 10 includes a main air inlet 11 and a plurality of sub-air inlets 12 connected to the main air inlet 11, and the plurality of sub-air inlets 12 are evenly arranged, the thermal insulation felt 30 is arranged inside the furnace cavity 60 and connected to the bottom plate 40 and the top plate 20, the deposition support platform 50 is arranged in the furnace cavity 60 and is used to place a deposition substrate, and an air outlet 41 is arranged around the bottom plate 40.
[0028] Specifically, the top plate 20 seals and prevents airflow from escaping, the insulation felt 50 limits the free diffusion of airflow and keeps warm, the air outlet 41 of the bottom plate 40 is used to discharge byproducts, the deposition support platform 50 is used to install sediments, and the furnace cavity 60 constructs a reaction chamber space. The utility model allows the gas to diffuse evenly into the cavity by arranging the air inlet pipe 10, and improves the distribution of the air inlet pipe 10 and the air outlet 41 in the furnace cavity 60, so that the gas field and temperature field in the furnace cavity are diffused more evenly.
[0029] Furthermore, the deposition platform 50 also includes a through hole 51 arranged in the middle position, and the through hole 51 is used for exhaust. When the substrate on the deposition platform 50 is deposited, the gaseous by-products and unreacted reactants can be better diffused away from the surface of the substrate.
[0030] Preferably, the number of the thermal insulation felts 30 is 12, and the 12 thermal insulation felts 30 are arranged around the furnace cavity 60 and fixed to the top plate 20 and the bottom plate 40, respectively. The 12 thermal insulation felts can limit the free diffusion of the airflow and perform heat preservation, making the reaction area more concentrated, increasing the deposition speed, and evenly dispersing the airflow, thereby improving the uniformity of deposition. The provision of the thermal insulation felts 30 can improve the heat insulation effect, so that the chemical vapor deposition equipment with a reaction chamber effectively improves the temperature uniformity in the reaction chamber, thereby improving the film formation quality of the film-forming substrate; at the same time, it effectively protects the components near the outer surface of the reaction chamber, reduces their aging speed, and thereby reduces the production and operation costs of the equipment.
[0031] Preferably, the cross-sections of the bottom plate 40, the top plate 20 and the air intake pipe 10 are circular.
[0032] See also Figure 2 , Figure 2 It is a cross-sectional schematic diagram of the chemical vapor deposition reaction chamber structure provided by the second embodiment of the utility model. In the second embodiment, the air inlet pipe 10 also includes a diffuser 13 arranged on the side, and the diffuser 13 is arranged at one end of the air inlet pipe 10 extending to the furnace cavity 60. When the reaction gas is introduced, the reaction gas is diverted to the sub-air inlet 12 through the main air inlet 11, and most of the gas enters the furnace cavity 60. Part of the gas can also enter the furnace cavity 60 through the diffuser 13, further allowing the reaction gas to enter the furnace cavity 60 evenly, so that the gas field and temperature field inside the furnace cavity are more evenly diffused. At this time, the position of the diffuser 13 is below the sub-air inlet 12. The other structures are the same as the first embodiment.
[0033] See also Figure 3 , Figure 3 2 is a cross-sectional schematic diagram of a chemical vapor deposition reaction chamber structure provided in the third embodiment of the utility model. In the third embodiment, a side air inlet 22 is further provided around the top plate 20, and other structures are the same as those in the second embodiment. The side air inlet 22 can facilitate the addition of multiple reaction gases.
[0034] In general, the chemical vapor deposition reaction chamber structure provided by the utility model allows the gas to diffuse evenly into the chamber by arranging an air inlet pipe, and improves the distribution of the air inlet pipe and the air outlet in the furnace chamber, so that the gas field and temperature field in the furnace chamber can diffuse more evenly, thereby making the deposited coating have more nucleation points, finer coating grains, and less large particles, and the resulting coating will be denser; the bonding strength between the coating and the substrate is improved; and the accessories are detachable and easy to replace, with low loss.
[0035] The above description is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the contents of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.
Claims
1. A chemical vapor deposition reaction chamber structure, characterized in that: It includes an air inlet pipe, a top plate, a thermal insulation felt, a bottom plate, a deposition support platform and a furnace cavity, wherein the top plate, the furnace cavity, the bottom plate and the thermal insulation felt form a deposition space, a connecting hole is arranged in the middle of the top plate, the air inlet pipe passes through the connecting hole of the top plate, the air inlet pipe includes a main air inlet and a plurality of sub-air inlets connected to the main air inlet, and the plurality of sub-air inlets are evenly arranged, the thermal insulation felt is arranged inside the furnace cavity and connected to the bottom plate and the top plate, the deposition support platform is arranged in the furnace cavity and is used to place a deposition substrate, and air outlets are arranged around the bottom plate.
2. The chemical vapor deposition reaction chamber structure according to claim 1, characterized in that: Side air inlets are also arranged around the periphery of the top plate.
3. The chemical vapor deposition reaction chamber structure according to claim 1, characterized in that: The deposition platform further includes a through hole arranged in the middle, and the through hole is used for exhaust.
4. The chemical vapor deposition reaction chamber structure according to claim 1, characterized in that: The number of the thermal insulation felts is 12, and the 12 thermal insulation felts are arranged around the furnace cavity and are respectively abutted and fixed to the top plate and the bottom plate.
5. The chemical vapor deposition reaction chamber structure according to claim 1, characterized in that: The cross sections of the bottom plate, the top plate and the air inlet pipe are circular.
6. The chemical vapor deposition reaction chamber structure according to claim 1, characterized in that: The air inlet pipe also includes a diffusion port arranged on the side, and the diffusion port is arranged on the end of the air inlet pipe extending to the furnace cavity.