Indirect water-cooling magnetron sputtering cathode capable of improving water-cooling capacity

Abstract

The utility model relates to the technical field of indirect water-cooling magnetron sputtering cathodes, and discloses an indirect water-cooling magnetron sputtering cathode capable of improving water-cooling capacity, which comprises a supporting bottom plate, a placing groove arranged in the middle of the top end of the supporting bottom plate, a supporting rod arranged at the bottom end of the supporting bottom plate, and a device main body arranged at the top end of the supporting bottom plate, a permanent magnet is arranged on the inner side of the device body, sputtering cathodes are arranged on the two sides of the permanent magnet, a target material is arranged at the top end of the device body, an indium layer is arranged at the bottom end of the target material, an oxygen-free copper back plate is arranged at the bottom end of the target material, fixing side blocks are arranged on the two sides of the oxygen-free copper back plate, fixing rotary knobs are arranged on the surfaces of the fixing side blocks, and a beryllium copper back plate is arranged at the bottom end of the oxygen-free copper back plate. Through the arrangement of the device main body, the oxygen-free copper back plate and the beryllium copper back plate, the bearable unit area power of the device is improved when the device is used, and the heat conduction efficiency is higher than that of a thick back plate through the arrangement of the beryllium copper back plate in the using process.

Description

Technical Field

[0001] The utility model relates to the technical field of indirect water-cooled magnetron sputtering cathodes, and more specifically to an indirect water-cooled magnetron sputtering cathode with improved water cooling capacity. Background Art

[0002] Magnetron sputtering technology is widely used in the fields of semiconductor coating, optical coating and tool coating. As the core component of magnetron sputtering equipment, there are many types of magnetron sputtering cathodes. However, all magnetron sputtering cathodes need water cooling when working to remove the heat generated during the sputtering process. If the water cooling effect is not good, it will cause the coating process to be unstable at best, and even damage the sputtering cathode. The current water cooling methods of sputtering target guns can be divided into indirect water cooling and direct water cooling, and each method has its own advantages and disadvantages.

[0003] After searching, the most similar implementation scheme to the present utility model is CN 218812043 U. The utility model relates to a magnetic field adjustable magnetron sputtering cathode, which includes a flange and a plurality of supporting feet for supporting the flange, a supporting frame is provided on the flange, a target material is provided on the supporting frame, a magnetic back plate is provided in the supporting frame, a plurality of adjusting devices for adjusting the distance between the magnetic back plate and the target material are provided at the bottom of the flange, the adjusting device includes an adjusting screw arranged at the bottom of the magnetic back plate, a spinning rod matched with the thread thereof is provided at the bottom of the adjusting screw, the bottom of the spinning rod passes through the flange and is rotatably connected with the flange, and a driving member for driving the spinning rod to rotate is provided at the bottom of the flange.

[0004] This patent has different structures and usage methods from this patent. Compared with the traditional indirect water-cooled sputtering cathode, the maximum power per unit area that can be carried by this patent is only about 50% of that of the direct water-cooled sputtering cathode, while the improved indirect water-cooled sputtering cathode of this patent reaches 70-80% of the direct water-cooled sputtering cathode. There is no need to cut off the water supply or drain the water when replacing the target material, and there is no risk of water leakage in the vacuum chamber. At the same time, the beryllium copper back plate does not need to be disassembled, so the sealing surface will not be scratched, and the copper back plate bound to the target does not need to be sealed, and even if there are some scratches, it will not affect the use. Utility Model Content

[0005] In order to overcome the above-mentioned defects of the prior art, the utility model provides an indirect water-cooled magnetron sputtering cathode with improved water cooling capacity, so as to solve the problems existing in the above-mentioned background technology.

[0006] The utility model provides the following technical solutions: an indirect water-cooled magnetron sputtering cathode with improved water cooling capacity, comprising a supporting bottom plate;

[0007] A device body, the device body being mounted on the top of the supporting base plate;

[0008] A target material, wherein the target material is installed at the top middle part of the device body;

[0009] An oxygen-free copper backing plate, the oxygen-free copper backing plate is installed at the bottom end of the target material, fixed side blocks are provided on both sides of the oxygen-free copper backing plate, the surface of the fixed side block is provided with a fixed knob, the fixed knob is rotatably installed on the surface of the fixed side block, and the fixed side block is fixedly connected to the oxygen-free copper backing plate;

[0010] Beryllium copper back plate, the beryllium copper back plate is installed on the bottom end of the oxygen-free copper back plate, sealing rings are provided on both side surfaces of the beryllium copper back plate, and fixing blocks are provided on both sides of the bottom end of the beryllium copper back plate. The sealing rings are fixedly installed on the two side surfaces of the beryllium copper back plate, and the fixing blocks are fixedly installed on both sides of the bottom end of the beryllium copper back plate.

[0011] Furthermore, a placement groove is provided at the top of the support base plate, and the placement groove facilitates the installation of the device. A support rod is provided at the bottom end of the support base plate, and the support rod is fixedly connected to the support base plate.

[0012] Furthermore, a permanent magnet is provided on the inner side of the device body, and a sputtering cathode shell is provided on both sides of the permanent magnet. The permanent magnet is fixedly installed on the inner side of the device body, and the sputtering cathode shell is fixedly installed on both sides of the inside of the device body.

[0013] Furthermore, an indium layer is provided at the bottom end of the target material, and the indium layer is fixedly installed at the middle part of the bottom end of the target material, and a vacuum chamber is provided between the indium layer and the target material.

[0014] Technical effects and advantages of the utility model:

[0015] 1. The utility model is provided with an oxygen-free copper backing plate. Because the backing plate is very thin, the water pressure and atmospheric pressure behind the backing plate will act on the target material through the backing plate. Therefore, the target material is preferably bound to an oxygen-free copper backing plate with sufficient strength to ensure that the target material will not be deformed or even broken by force. In practice, this patent uses indium to bind the target material to a 6mm thick oxygen-free copper backing plate, which can avoid deformation or even breakage of the target material and improve the power per unit area.

[0016] 2. The utility model is provided with a beryllium copper back plate, in which a particularly thin, thermally conductive and elastic metal is used as the back plate, such as beryllium copper (this patent uses a 2mm thick beryllium copper plate), with a thickness between 1-2mm. When the cathode is working, the back plate is deformed under the action of water pressure and atmospheric pressure and adheres to the target material. At the same time, because the back plate is very thin, the thermal conductivity efficiency is higher than that of a thicker back plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the overall structure of the utility model.

[0018] Figure 2 It is a schematic diagram of the supporting base plate of the utility model.

[0019] Figure 3 It is a schematic diagram of the main structure of the device of the utility model.

[0020] Figure 4 This is a schematic diagram of the target material structure of the utility model.

[0021] Figure 5 This is a schematic diagram of the oxygen-free copper backplane structure of the utility model.

[0022] Figure 6 This is a schematic diagram of the structure of the beryllium copper back plate of the utility model.

[0023] In the figure: 1. supporting base plate; 11. placing groove; 12. supporting rod; 2. device body; 21. permanent magnet; 22. sputtering cathode shell; 3. target material; 31. indium layer; 4. oxygen-free copper back plate; 41. fixed side block; 42. fixed knob; 5. beryllium copper back plate; 51. sealing ring; 52. fixed block. DETAILED DESCRIPTION

[0024] The technical solution of the present invention will be clearly and completely described below in conjunction with the drawings in the present invention. In addition, the forms of the various structures recorded in the following embodiments are merely illustrative. The indirect water-cooled magnetron sputtering cathode for improving water cooling capacity involved in the present invention is not limited to the various structures recorded in the following embodiments. All other implementations obtained by ordinary technicians in this field without making creative work belong to the scope of protection of the present invention.

[0025] Reference Figure 1-6 The utility model provides an indirect water-cooled magnetron sputtering cathode with improved water cooling capacity, comprising: a supporting bottom plate 1, a device body 2 is arranged at the top of the supporting bottom plate 1, a target material 3 is arranged at the top of the device body 2, an oxygen-free copper back plate 4 is arranged at the bottom of the target material 3, and a beryllium copper back plate 5 is arranged at the bottom of the oxygen-free copper back plate 4.

[0026] Both sides of the oxygen-free copper back plate 4 are provided with fixed side blocks 41, and the surface of the fixed side blocks 41 is provided with fixed knobs 42, wherein the fixed knobs 42 are rotatably mounted on the surface of the fixed side blocks 41, and the fixed side blocks 41 are fixedly connected to the oxygen-free copper back plate 4;

[0027] Sealing rings 51 are provided on both sides of the beryllium copper back plate 5, and fixing blocks 52 are provided on both sides of the bottom end of the beryllium copper back plate 5. The sealing rings 51 are fixedly installed on both sides of the beryllium copper back plate 5, and the fixing blocks 52 are fixedly installed on both sides of the bottom end of the beryllium copper back plate 5.

[0028] Reference Figure 2A placement groove 11 is provided at the top of the supporting base plate 1, and the placement groove 11 is convenient for the installation of the device. A support rod 12 is provided at the bottom end of the supporting base plate 1; wherein the support rod 12 is fixedly connected to the supporting base plate 1.

[0029] Reference Figure 3 The device body 2 is composed of a permanent magnet 21 and a sputtering cathode housing 22, wherein the permanent magnet 21 is fixedly mounted on the inner side of the device body 2, and the sputtering cathode housing 22 is fixedly mounted on both sides of the inner side of the device body 2;

[0030] Reference Figure 4 , an indium layer 31 is provided at the bottom end of the target material 3, and an indium layer 31 is fixedly installed at the middle part of the bottom end of the target material 3;

[0031] The working principle of the utility model is as follows: when in use, the device body 2 can be installed on the inner side of the placement groove 11 provided at the top of the support base plate 1, and then the support work is carried out through the support rod 11 provided at the bottom end of the support base plate 1. When working, the cooling water inside the device body 2 will impact and sputter the sputtering cathode shell 22 provided on both sides of the device body 2 under the action of the permanent magnet 21, so as to carry out heat conduction work; when it is necessary to disassemble the target material 3, the fixing knobs 42 provided on both sides of the oxygen-free copper back plate 4 can be unscrewed from the fixing side block 41, and then the oxygen-free copper back plate 4 can be lifted upward, so that the oxygen-free copper back plate 4 drives the target material 3 Leaving the device body 2, since the indium layer 31 is provided at the bottom end of the target material 3, there is no need to cut off the water supply, drain the water, etc. when replacing the target material 3, and there is no risk of water leakage in the vacuum chamber. At the same time, the beryllium copper back plate 5 does not need to be disassembled during disassembly. Therefore, the sealing surface of the beryllium copper back plate 5 will not be scratched, and the oxygen-free copper back plate 4 bound to the target material 3 does not need to be sealed, and even if there are some scratches, it will not affect the use. The fixing block 51 can fix the beryllium copper back plate 5 to the device body 2, and the sealing ring 52 can improve the sealing between the beryllium copper back plate 5 and the device body 2, so that the device has better sealing during use. The above is the entire working principle of the utility model.

[0032] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be regarded as exemplary and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present invention. Any reference numeral in a claim should not be regarded as limiting the claim to which it relates.

Claims

1. An indirect water-cooled magnetron sputtering cathode with improved water cooling capacity, comprising a supporting base plate (1); Features: A device body (2), wherein the device body (2) is mounted on the top of the supporting base plate (1); A target material (3), wherein the target material (3) is mounted at the top middle portion of the device body (2); An oxygen-free copper backing plate (4), the oxygen-free copper backing plate (4) being mounted on the bottom end of the target material (3), fixed side blocks (41) being provided on both sides of the oxygen-free copper backing plate (4), a fixed knob (42) being provided on the surface of the fixed side block (41), the fixed knob (42) being rotatably mounted on the surface of the fixed side block (41), and the fixed side block (41) being fixedly connected to the oxygen-free copper backing plate (4); A beryllium copper back plate (5), the beryllium copper back plate (5) being mounted on the bottom end of an oxygen-free copper back plate (4), sealing rings (51) being provided on both side surfaces of the beryllium copper back plate (5), fixing blocks (52) being provided on both sides of the bottom end of the beryllium copper back plate (5), the sealing rings (51) being fixedly mounted on both side surfaces of the beryllium copper back plate (5), and the fixing blocks (52) being fixedly mounted on both sides of the bottom end of the beryllium copper back plate (5).

2. The indirect water-cooled magnetron sputtering cathode with improved water cooling capacity according to claim 1, characterized in that: The top end of the support base plate (1) is provided with a placement groove (11), and the placement groove (11) facilitates the installation of the device. The bottom end of the support base plate (1) is provided with a support rod (12), and the support rod (12) is fixedly connected to the support base plate (1).

3. The indirect water-cooled magnetron sputtering cathode with improved water cooling capacity according to claim 1, characterized in that: A permanent magnet (21) is provided on the inner side of the device body (2), and a sputtering cathode shell (22) is provided on both sides of the permanent magnet (21). The permanent magnet (21) is fixedly mounted on the inner side of the device body (2), and the sputtering cathode shell (22) is fixedly mounted on both sides of the inside of the device body (2).

4. The indirect water-cooled magnetron sputtering cathode with improved water cooling capacity according to claim 1, characterized in that: An indium layer (31) is provided at the bottom end of the target material (3), the indium layer (31) is fixedly mounted at the middle part of the bottom end of the target material (3), and a vacuum chamber is provided between the indium layer (31) and the target material (3).

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