Processing device for 3D hemispherical high-thermal-conductivity metal substrate

Abstract

The utility model discloses a processing device for a 3D hemispherical high-thermal-conductivity metal substrate, which relates to the technical field of metal substrate processing and comprises a processing bed, a protective frame is mounted above the processing bed, a processing box is mounted at the rear end of the processing bed, a guide frame is mounted at the top end of the processing bed, an electric guide plate is mounted on the inner side of the guide frame, and the electric guide plate is mounted on the inner side of the guide frame. An operation table is installed above the machining box, a radiator is installed at the bottom end of the machining bed, the clamping mechanism comprises a machine box arranged above an electric guide plate, and a connecting rod is rotationally connected to the interior of the machine box; and the protection mechanism is arranged at the front end of the machining bed and used for providing a protection function for the interior of the machining box. The metal substrate processing device disclosed by the utility model has the advantages that a worker can conveniently and quickly position and process the metal substrate, and the processing efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of metal substrate processing, in particular to a device for processing a 3D hemispherical high-thermal-conductivity metal substrate. Background Art

[0002] 3D hemispherical high thermal conductivity metal substrate is a metal substrate that combines high thermal conductivity and hemispherical design. High thermal conductivity metal substrates usually use copper or aluminum as the base material because these materials have high thermal conductivity.

[0003] During the processing of the existing heat-conducting metal substrate processing device, the workers need to repeatedly operate the existing positioning mechanism to position the heat-conducting metal substrate, and then repeat the operation after processing to achieve the effect of picking up, which is cumbersome and inconvenient to operate. Utility Model Content

[0004] The utility model discloses a device for processing 3D hemispherical high-thermal-conductivity metal substrates, which aims to solve the technical problem that in the existing thermally conductive metal substrate processing device, workers need to repeatedly operate the existing positioning mechanism to position the thermally conductive metal substrate during the processing process, and then repeat the operation after processing to achieve the effect of picking up, which is cumbersome and inconvenient to operate.

[0005] In order to achieve the above purpose, the present invention adopts the following technical solutions:

[0006] A device for processing 3D hemispherical high-thermal-conductivity metal substrates, comprising a processing bed, a protective frame installed above the processing bed, a processing box installed at the rear end of the processing bed, a guide frame installed at the top of the processing bed, an electric conductive plate installed on the inner side of the guide frame, an operating table installed above the processing box, a radiator installed at the bottom end of the processing bed, and a clamping mechanism: the clamping mechanism includes a machine box arranged above the electric conductive plate, a connecting rod is rotatably connected to the inside of the machine box, one end of the connecting rod is fixedly connected to a connecting component for rotating the connecting rod, the other end of the connecting rod is threadedly connected to a clamping block, and the inner side of the processing box is fixedly connected to a driving component for clamping the metal substrate; a protective mechanism: the protective mechanism is arranged at the front end of the processing bed, and the protective mechanism is used to provide a protective function for the inside of the processing box.

[0007] By setting up a clamping mechanism, the metal substrate can be placed above the conductive plate, and then the conductive plate can be started to slide and extend into the interior of the processing box, so that the connecting rod can be rotated inside the machine box, so that the machine box rotates and drives the clamping block with one end threadedly connected to slide above the conductive plate, thereby clamping and positioning the outside of the placed metal substrate.

[0008] In a preferred embodiment, the protective mechanism includes a protective cover arranged at the front end of the processing bed, the bottom end of the protective cover is fixedly connected to a rotating component for flipping the protective cover, both sides of the conductive plate are fixedly connected to slides, and the top end of the protective cover is rotatably connected to a rotating shaft.

[0009] By setting up a protective mechanism, the conductive plate can slide along the guide track of the guide frame and extend to the interior of the processing box, and the slides fixedly connected on both sides of the conductive plate can slide on the inner side of the guide frame, so that the guide frame slides and drives the protective cover with a rotating shaft installed on the top to flip over, so that the protective cover can be opened to release the blockage formed on the front end of the processing box.

[0010] In a preferred solution, the rotating assembly includes a tooth column arranged at the bottom end of the protective cover, a tooth groove is provided on the inner side of the slide plate, and the slide plate and the tooth column are meshingly connected.

[0011] By arranging a rotating component, the protective cover can be turned over.

[0012] In a preferred solution, the connecting assembly includes a rotating gear provided at one end of the connecting rod, and a slot is provided on the rear side of the machine box.

[0013] By arranging the connecting assembly, the connecting rod can be rotated.

[0014] In a preferred solution, the driving assembly includes a fixed plate arranged on the inner side of the processing box, one side of the fixed plate is provided with teeth, and the fixed plate and the rotating gear are in meshing connection.

[0015] By providing a driving assembly, the fixed plate can slide to drive the rotating gear to rotate.

[0016] In a preferred solution, the bottom end of the clamping block is fixedly connected to a limiting block, a guide groove is provided above the conductive plate, the limiting block is slidably connected in the guide groove, and a placement groove is provided at the top center of the conductive plate.

[0017] By arranging the limit block and the guide groove, the clamping block can be guided and slid.

[0018] The utility model discloses a device for processing a 3D hemispherical high-thermal-conductivity metal substrate, which has the following beneficial effects.

[0019] First, by setting up a clamping mechanism, the metal substrate can be placed on top of the conductive plate, and then the conductive plate can be started to slide and extend into the interior of the processing box, so that the connecting rod can be rotated inside the machine box. When the machine box rotates, the clamping block with one end threadedly connected can be driven to slide above the conductive plate, thereby clamping and positioning the outside of the placed metal substrate. This can facilitate workers to quickly position and process the metal substrate, thereby improving processing efficiency.

[0020] Secondly, by setting up a protective mechanism, the conductive plate can slide along the guide track of the guide frame and extend to the interior of the processing box, and the slides fixedly connected on both sides of the conductive plate can slide on the inner side of the guide frame, so that the guide frame slides and drives the protective cover with a rotating shaft installed on the top to flip over, so that the protective cover can be opened to release the blockage formed on the front end of the processing box. After the device is used, the machine inside the device can be protected and isolated from the outside world. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is an axonometric diagram of a 3D hemispherical high thermal conductivity metal substrate processing device proposed in the present invention.

[0022] Figure 2 This is an axonometric view from another angle of the device for processing a 3D hemispherical high thermal conductivity metal substrate proposed by the present invention.

[0023] Figure 3 This utility model proposes a 3D hemispherical high thermal conductivity metal substrate processing device Figure 1 Cross-sectional view at point A in the middle.

[0024] Figure 4 This is a top-sectional view of a 3D hemispherical high thermal conductivity metal substrate processing device proposed in the present invention.

[0025] Figure 5 This is a disassembled diagram of a 3D hemispherical high thermal conductivity metal substrate processing device proposed in the present invention.

[0026] In the attached figure: 1. Processing bed; 2. Processing box; 3. Protective frame; 4. Operating table; 5. Rotating shaft; 6. Guide frame; 7. Radiator; 8. Conductive plate; 9. Clamp; 10. Machine box; 11. Protective cover; 12. Slide plate; 13. Gear column; 14. Fixing plate; 15. Connecting rod; 16. Rotating gear. DETAILED DESCRIPTION

[0027] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0028] In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "top", "bottom", "inside", "outside", etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they cannot be understood as limitations on the present invention.

[0029] The utility model discloses a 3D hemispherical high thermal conductivity metal substrate processing device mainly uses the existing thermal conductive metal substrate processing device. During the processing process, the staff needs to repeatedly operate the existing positioning mechanism to position the thermal conductive metal substrate.

[0030] Reference Figure 1 、 Figure 2 、 Figure 3 、 Figure 4 and Figure 5 , a 3D hemispherical high thermal conductivity metal substrate processing device, comprising a processing bed 1, a protective frame 3 is installed above the processing bed 1, a processing box 2 is installed at the rear end of the processing bed 1, a guide frame 6 is installed on the top of the processing bed 1, an electric conductive plate 8 is installed on the inner side of the guide frame 6, an operating table 4 is installed above the processing box 2, a radiator 7 is installed at the bottom end of the processing bed 1, and also includes a clamping mechanism: the clamping mechanism includes a machine box 10 arranged above the electric conductive plate 8, the interior of the machine box 10 is rotatably connected to a connecting rod 15, one end of the connecting rod 15 is fixedly connected to a connecting component for rotating the connecting rod 15, the other end of the connecting rod 15 is threadedly connected to a clamping block 9, and the inner side of the processing box 2 is fixedly connected to a driving component for clamping the metal substrate; a protective mechanism: the protective mechanism is arranged at the front end of the processing bed 1, and the protective mechanism is used to provide a protective function for the inside of the processing box 2.

[0031] In this solution, when the staff is processing the metal substrate, the metal substrate can be placed on top of the conductive plate 8, and then the conductive plate 8 can be started to slide and extend into the interior of the processing box 2, so that the driving component installed on the inside of the processing box 2 can be inserted into the interior of the machine box 10, and the driving component can drive the connecting component engaged on one side to rotate, so that the connecting rod 15 with the connecting component fixedly connected at one end rotates inside the machine box 10, so that the machine box 10 rotates and drives the clamping block 9 with one end threadedly connected to slide above the conductive plate 8, so that the outside of the placed metal substrate can be clamped and positioned. At the same time, by setting a protective mechanism, the machine inside the device can be protected and isolated from the outside after the device is used.

[0032] Among them, reference Figure 1 and Figure 3In a preferred embodiment, the protective mechanism includes a protective cover 11 arranged at the front end of the processing bed 1, the bottom end of the protective cover 11 is fixedly connected to a rotating component for flipping the protective cover 11, both sides of the conductive plate 8 are fixedly connected to a slide plate 12, and the top end of the protective cover 11 is rotatably connected to a rotating shaft 5.

[0033] In this solution, by setting up a protective mechanism, the conductive plate 8 can slide along the guide track of the guide frame 6 and extend to the interior of the processing box 2, and the slides 12 fixedly connected on both sides of the conductive plate 8 can slide on the inner side of the guide frame 6, so that the guide frame 6 slides and drives the protective cover 11 with the rotating shaft 5 installed on the top to flip over, so that the protective cover 11 can be opened to release the barrier formed on the front end of the processing box 2.

[0034] Further, refer to Figure 2 and Figure 3 In a preferred embodiment, the rotating assembly includes a tooth column 13 arranged at the bottom end of the protective cover 11, and a tooth groove is opened on the inner side of the slide 12. The slide 12 and the tooth column 13 are meshed and connected. By setting the rotating assembly, the protective cover 11 can be flipped.

[0035] Among them, reference Figure 4 and Figure 5 In a preferred embodiment, the connecting assembly includes a rotating gear 16 provided at one end of the connecting rod 15, and a slot is provided on the rear side of the machine box 10. By providing the connecting assembly, the connecting rod 15 can be rotated.

[0036] Further, refer to Figure 3 and Figure 4 In a preferred embodiment, the driving assembly includes a fixed plate 14 arranged on the inner side of the processing box 2, and a tooth pattern is provided on one side of the fixed plate 14. The fixed plate 14 and the rotating gear 16 are meshedly connected. By setting the driving assembly, the fixed plate 14 can slide and drive the rotating gear 16 to rotate.

[0037] Among them, reference Figure 3 and Figure 4 In a preferred embodiment, the bottom end of the clamping block 9 is fixedly connected to a limit block, a guide groove is provided above the conductive plate 8, the limit block is slidably connected in the guide groove, and a placement groove is provided at the top center of the conductive plate 8. By setting the limit block and the guide groove, the clamping block 9 can be guided and slid.

[0038] The above are merely preferred embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Replacements may include partial structures, devices, or method steps, or they may be complete technical solutions. Equivalent replacements or modifications based on the technical solution and its concept of the present invention are also encompassed within the scope of protection of the present invention.

Claims

1. A 3D hemispherical high thermal conductivity metal substrate processing device, comprising a processing bed (1), a protective frame (3) is installed above the processing bed (1), a processing box (2) is installed at the rear end of the processing bed (1), a guide frame (6) is installed at the top of the processing bed (1), an electric conductive plate (8) is installed on the inner side of the guide frame (6), an operating table (4) is installed above the processing box (2), and a radiator (7) is installed at the bottom of the processing bed (1), characterized in that: Also includes: Clamping mechanism: the clamping mechanism comprises a machine box (10) arranged above the conductive plate (8), a connecting rod (15) is rotatably connected inside the machine box (10), one end of the connecting rod (15) is fixedly connected to a connecting assembly for rotating the connecting rod (15), the other end of the connecting rod (15) is threadedly connected to a clamping block (9), and the inner side of the processing box (2) is fixedly connected to a driving assembly for clamping the metal substrate; Protection mechanism: The protection mechanism is arranged at the front end of the processing bed (1), and is used to provide a protection function for the interior of the processing box (2).

2. The device for processing a 3D hemispherical high thermal conductivity metal substrate according to claim 1, characterized in that: The protection mechanism comprises a protection cover (11) arranged at the front end of the processing bed (1), the bottom end of the protection cover (11) is fixedly connected to a rotating assembly for turning the protection cover (11), both sides of the conductive plate (8) are fixedly connected to slide plates (12), and the top end of the protection cover (11) is rotatably connected to a rotating shaft (5).

3. The device for processing a 3D hemispherical high thermal conductivity metal substrate according to claim 2, characterized in that: The rotating assembly comprises a tooth column (13) arranged at the bottom end of the protective cover (11), a tooth groove is provided on the inner side of the slide plate (12), and the slide plate (12) and the tooth column (13) are meshingly connected.

4. The device for processing a 3D hemispherical high thermal conductivity metal substrate according to claim 1, characterized in that: The connecting assembly comprises a rotating gear (16) arranged at one end of the connecting rod (15), and a slot is provided on the rear side of the machine box (10).

5. The device for processing a 3D hemispherical high thermal conductivity metal substrate according to claim 4, characterized in that: The driving assembly comprises a fixed plate (14) arranged inside the processing box (2), one side of the fixed plate (14) is provided with tooth patterns, and the fixed plate (14) and the rotating gear (16) are meshingly connected.

6. The device for processing a 3D hemispherical high thermal conductivity metal substrate according to claim 1, characterized in that: The outer surface of the connecting rod (15) is provided with a thread, and the interior of the clamping block (9) is provided with a thread groove.

7. The device for processing a 3D hemispherical high thermal conductivity metal substrate according to claim 1, characterized in that: The bottom end of the clamping block (9) is fixedly connected to a limit block, a guide groove is provided above the conductive plate (8), the limit block is slidably connected in the guide groove, and a placement groove is provided at the center of the top end of the conductive plate (8).

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