Optical limiter based on gallium nitride nanowire and nonlinear light absorption testing device

Abstract

The utility model discloses an optical limiting device based on gallium nitride nanowires and a nonlinear light absorption testing device. The optical limiting device comprises a light-transmitting container used for storing high-concentration gallium nitride nanowire dispersion liquid. Another optical limiting device comprises a light-transmitting substrate, an anhydrous gallium nitride nanowire layer is arranged on the surface of the light-transmitting substrate, a light-transmitting cover piece covers the anhydrous gallium nitride nanowire layer, and a sealing edge surrounds the edge of the anhydrous gallium nitride nanowire layer and is located between the light-transmitting cover piece and the light-transmitting substrate. The nonlinear light absorption testing device comprises a pulse laser, a diaphragm, a laser attenuation device, a beam splitter, a focusing lens, a first laser energy meter, a second laser energy meter, a collection lens and a light limiter. According to the utility model, the gallium nitride nanowire is used as an optical amplitude limiting material, broadband optical amplitude limiting of ultraviolet-visible-near infrared bands can be realized, and the problems of low light intensity transmittance and high light intensity transmittance of the existing ultraviolet light amplitude limiting material are solved.

Description

Technical Field

[0001] The utility model relates to the technical field of broadband optical limiting, and more specifically, to an optical limiting device based on gallium nitride nanowires and a nonlinear optical absorption testing device. Background Art

[0002] In-depth research has been conducted on the nonlinear optical effects of inorganic semiconductors, conjugated organic polymers, inorganic metal cluster compounds, carbon nanomaterials and two-dimensional materials. The results show that their optical limiting wavelengths are in the visible to near-infrared band. Ultraviolet lasers have the characteristics of large photon energy and high resolution. They are increasingly widely used in fine processing, inspection and testing, medicine, atmospheric detection, scientific research, etc. However, the development of ultraviolet band optical limiting technology faces very few materials. Common ultraviolet limiting materials include silicon dioxide, diamond, gallium nitride crystals, etc., which have the disadvantages of low transmittance at low light intensity and high transmittance at high light intensity. For example, the normalized transmittance of gallium nitride crystals under 390nm ultraviolet lasers is 99.88% (Applied Physics Letters, 2000, 76, 439), and the normalized transmittance of diamond under 310nm ultraviolet lasers is 42.9% (Optics letters, 1991, 16, 499). At the same time, the application of multi-wavelength lasers with a wide spectrum from ultraviolet to near-infrared is increasing in inspection and testing, spectral analysis, and laser weapons. Optical limiting devices with a wide spectral range from ultraviolet to visible light are in urgent need of preparation and research. Utility Model Content

[0003] The purpose of the utility model is to overcome the above-mentioned defects in the prior art and provide a light limiting device based on gallium nitride nanowires and a nonlinear light absorption test device.

[0004] To achieve the above objectives, the first aspect of the utility model provides a GaN nanowire-based optical limiting device, comprising a light-transmitting container for storing a high-concentration GaN nanowire dispersion, wherein the light-transmitting container stores a high-concentration GaN nanowire dispersion.

[0005] Preferably, the light-transmitting container is a transparent quartz container.

[0006] A second aspect of the utility model provides another optical limiting device based on gallium nitride nanowires, comprising a light-transmitting substrate, on the surface of which an anhydrous gallium nitride nanowire layer is arranged.

[0007] Preferably, the light-transmitting substrate is a transparent quartz substrate or a sapphire substrate.

[0008] Preferably, it also includes an edge seal and a light-transmitting cover, wherein the light-transmitting cover is arranged on the surface of the anhydrous gallium nitride nanowire layer, and the edge seal is arranged around the edge of the anhydrous gallium nitride nanowire layer and is located between the light-transmitting cover and the light-transmitting substrate.

[0009] Preferably, the edge sealing is configured as silicone edge sealing, hot melt adhesive edge sealing or glass adhesive edge sealing, and the light-transmitting cover is configured as a transparent quartz cover plate or a sapphire cover plate.

[0010] Preferably, the anhydrous gallium nitride nanowire layer is formed by evaporating water from a high-concentration gallium nitride nanowire dispersion liquid spin-coated on a light-transmitting substrate.

[0011] The third aspect of the utility model provides a nonlinear light absorption testing device, comprising a pulsed laser, an aperture, a laser attenuation device, a beam splitter, a focusing lens, a first laser energy meter, a second laser energy meter, a collecting lens and the light limiting device based on gallium nitride nanowires described in the above technical solution, wherein the pulsed laser, the aperture, the laser attenuation device, the beam splitter, the focusing lens, the light limiting device, the collecting lens and the second laser energy meter are arranged in sequence along a straight line, and the first laser energy meter is located on the side of the beam splitter.

[0012] Preferably, the device further comprises a limiting device translation driving device for driving the optical limiting device to translate back and forth along the arrangement direction, wherein the limiting device translation driving device is located below the optical limiting device and is drivingly connected to the optical limiting device.

[0013] Compared with the prior art, the beneficial effects of the utility model are:

[0014] 1. The utility model has a simple structure and a reasonable design. It adopts gallium nitride nanowires as the light limiting material, which solves the problem that the existing light limiting materials have low transmittance at low light intensity and high transmittance at high light intensity.

[0015] 2. The working spectrum range of the optical limiting device of the utility model is from deep ultraviolet 266nm to near infrared 1064nm wavelength, especially in the ultraviolet band, it has good optical limiting performance and is a nano ultraviolet light limiting device with excellent performance.

[0016] 3. The optical limiting device of the utility model has a large modulation depth and a small transmittance. The modulation depths at wavelengths of 266nm, 355nm, 532nm and 1064nm are 73.6%, 74.9%, 63.1% and 64.3% respectively, and the corresponding minimum transmittances are 26.4%, 25.1%, 36.9% and 35.7%.

[0017] 4. The utility model realizes the sandwich design of the optical limiting device by covering and gluing the edges through the light-transmitting cover and the edge sealing, thereby ensuring that the position of the gallium nitride nanowires is accurate and will not be offset. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 It is a cross-sectional view provided by the first embodiment of the utility model;

[0020] Figure 2 It is a structural schematic diagram provided by the second embodiment of the present utility model;

[0021] Figure 3 This is an exploded view provided by the second embodiment of the present utility model;

[0022] Figure 4 It is a cross-sectional view provided by the second embodiment of the present utility model;

[0023] Figure 5 It is a structural schematic diagram provided by the third embodiment of the present utility model;

[0024] Figure 6 It is a light transmission spectrum diagram of the optical limiting device provided in the embodiment of the utility model;

[0025] Figure 7 The optical limiting device provided by the embodiment of the utility model has an excitation peak power density of 10.21GW / cm at a laser wavelength of 266nm. 2 The Z-scan test result of the opening when (the dotted line is the experimental measurement data, and the solid line is the nonlinear absorption theory fitting curve);

[0026] Figure 8 The optical limiting device provided by the embodiment of the utility model has an excitation peak power density of 11.02GW / cm at a laser wavelength of 355nm. 2 The Z-scan test result of the opening when (the dotted line is the experimental measurement data, and the solid line is the nonlinear absorption theory fitting curve);

[0027] Fig. 9 The optical limiting device provided by the embodiment of the utility model has an excitation peak power density of 45.07GW / cm at a laser wavelength of 532nm. 2 The Z-scan test result of the opening when (the dotted line is the experimental measurement data, and the solid line is the nonlinear absorption theory fitting curve);

[0028] Fig.10The optical limiting device provided by the embodiment of the utility model has an excitation peak power density of 98.26GW / cm at a laser wavelength of 1064nm. 2 The Z-scan test result of the opening when (the dotted line is the experimental measurement data, and the solid line is the nonlinear absorption theory fitting curve);

[0029] Fig.11 It is a graph showing the relationship between the normalized transmittance of the optical limiting device provided by the embodiment of the utility model and the peak power density at 266nm, 355nm, 532nm and 1064nm (the dotted line is the experimental measurement data, and the solid line is the nonlinear absorption theory fitting curve);

[0030] Fig.12 This is a HR-SEM image of the gallium nitride nanowires provided by the embodiment of the utility model;

[0031] Fig.13 This is a HR-SEM image of a single gallium nitride nanowire provided by an embodiment of the present utility model;

[0032] Fig.14 It is the quantitative elemental analysis data of the gallium nitride nanowire composite sample provided by the embodiment of the utility model;

[0033] Fig.15 This is a low-magnification TEM image of the gallium nitride nanowire provided by an embodiment of the utility model;

[0034] Fig.16 This is a high-resolution TEM image of gallium nitride nanowires provided by an embodiment of the utility model;

[0035] Fig.17 This is an electron diffraction pattern of the gallium nitride nanowire provided by the embodiment of the present utility model. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0037] Embodiment 1

[0038] Please refer to Figure 1 Embodiment 1 of the present invention provides a light limiting device based on gallium nitride nanowires, including a light-transmitting container 12 for storing a high-concentration gallium nitride nanowire dispersion 11, wherein the light-transmitting container 12 stores the high-concentration gallium nitride nanowire dispersion 11.

[0039] In this embodiment, the light-transmitting container 12 can be set as a transparent quartz container. Of course, in other embodiments, the light-transmitting container 12 can also be set as other light-transmitting containers, not limited to this embodiment.

[0040] Embodiment 2

[0041] Please refer to Figures 2 to 4 The second embodiment of the utility model provides another optical limiting device based on gallium nitride nanowires, including a light-transmitting substrate 13, an edge seal 15 and a light-transmitting cover 16. The structure and working principle of each component will be described below.

[0042] Preferably, the light-transmitting substrate 13 may be configured as a transparent quartz substrate, and in other embodiments, the light-transmitting substrate 13 may also be configured as other light-transmitting substrates, such as a sapphire substrate, which is not limited to this embodiment.

[0043] The surface of the transparent quartz substrate is provided with an anhydrous gallium nitride nanowire layer 14. The anhydrous gallium nitride nanowire layer 14 of this embodiment is formed by first spin coating a high concentration gallium nitride nanowire dispersion on the surface of the transparent quartz substrate, and then evaporating the water by heating.

[0044] The light-transmitting cover 16 is disposed on the surface of the anhydrous gallium nitride nanowire layer 14 . The edge sealing 15 is disposed around the edge of the anhydrous gallium nitride nanowire layer 14 and is located between the light-transmitting cover 16 and the light-transmitting substrate 13 .

[0045] In this embodiment, the edge sealing 15 is configured as a silicone edge sealing, a hot melt adhesive edge sealing or a glass adhesive edge sealing, and the light-transmitting cover 16 is configured as a transparent quartz cover plate or a sapphire cover plate.

[0046] Embodiment 3

[0047] Please refer to Figure 5 Embodiment 3 of the present invention provides a nonlinear light absorption testing device, including a pulsed laser 2, an aperture 3, a laser attenuation device 4, a beam splitter 5, a focusing lens 6, a first laser energy meter 9, a second laser energy meter 7, a collecting lens 10 and the optical limiting device 1 of the above-mentioned embodiment 1 or embodiment 2.

[0048] The pulse laser 2, the aperture 3, the laser attenuation device 4, the beam splitter 5, the focusing lens 6, the light limiting device 1, the collecting lens 10 and the second laser energy meter 7 are arranged in sequence along a straight line. The first laser energy meter 9 is located on the side of the beam splitter 5. The first energy meter, the second energy meter and the translation drive device can realize data transmission and controllable connection with common control equipment on the market, such as computers, industrial computers, etc., but this embodiment does not involve improvements in this aspect, which will not be repeated here.

[0049] In order to achieve adjustable position of the optical limiting device, a limiting device translation drive device 8 for driving the optical limiting device 1 to translate back and forth along the arrangement direction can be provided below the optical limiting device. The translation drive device 8 can be set as a mobile platform on the market, and a slider is translationally connected to the bottom plate of the mobile platform. The translation of the slider is driven by a translation drive component (such as a motor + rack + gear). Of course, the translation drive device can also be set to other forms of common translation drive devices on the market, which is not limited to this embodiment.

[0050] The pulse laser of the third embodiment can be set to a picosecond pulse laser on the market, which can output lasers with wavelengths of 266nm, 355nm, 532nm, and 1064nm. The aperture can adopt any laser aperture on the market, the laser attenuation device can adopt any laser attenuator on the market, the beam splitter can adopt any 50:50 beam splitter on the market, the focusing lens and the collecting lens can adopt any lens with a focal length of 300mm on the market, and the focusing and collecting functions of the two lenses can be achieved by placing the lenses in the forward and reverse directions. This embodiment will not be repeated here. The first energy meter and the second energy meter can adopt any laser energy detection meter on the market.

[0051] During operation, the pulse laser emits a laser, which passes through the aperture, attenuation device, beam splitter, focusing lens, light limiting device and collecting lens in sequence, and finally shoots to the second energy meter. When passing through the beam splitter, part of the laser beam will be split and shot to the first energy meter. The control device realizes the laser absorption test operation by reading the detection data of the energy meter.

[0052] In summary, the utility model has the following advantages:

[0053] 1. The utility model has a simple and novel structure and a reasonable design. It adopts gallium nitride nanowires as the optical limiting material, which solves the problem that the existing optical limiting materials have low transmittance at low light intensity and high transmittance at high light intensity.

[0054] 2. The working spectrum range of the optical limiting device of the utility model is from deep ultraviolet 266nm to near infrared 1064nm wavelength, especially in the ultraviolet band, it has good optical limiting performance and is a nano ultraviolet light limiting device with excellent performance.

[0055] 3. The linear transmittance of the GaN nanowire optical limiting device of the utility model is high, and the transmittance at wavelengths of 266nm, 355nm, 532nm, and 1064nm is 50.2%, 53.5%, 59.9% and 65.6% respectively. Figure 6 As shown. And the modulation depth of the optical limiting device is large, Figures 7 to 11It can be seen that the modulation depths of this embodiment at 266nm, 355nm, 532nm and 1064nm wavelengths are 73.6%, 74.9%, 63.1% and 64.3% respectively, and the corresponding minimum transmittances are 26.4%, 25.1%, 36.9% and 35.7%. The nonlinear absorption theory fitting curve ( Figures 7 to 11 The solid line shows that the anti-saturation effect at 266 nm, 355 nm, and 532 nm is caused by two-photon absorption, and the two-photon absorption coefficients are 0.22 cm / GW, 0.28 cm / GW, and 0.08 cm / GW, respectively. The anti-saturation effect at 1064 nm is caused by three-photon absorption, and the three-photon absorption coefficient is 2.82×10 -4 cm 3 / GW 2 .

[0056] 4. The utility model realizes the sandwich design of the optical limiting device by covering and gluing the edges through the transparent cover and edge sealing, ensuring the accurate position of the gallium nitride nanowires without deviation, stable structure, and wide application occasions.

[0057] The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited by the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principle of the present invention should be equivalent replacement methods and are included in the protection scope of the present invention.

Claims

1. An optical limiting device based on gallium nitride nanowires, characterized in that: The invention comprises a light-transmitting container (12) for storing a high-concentration gallium nitride nanowire dispersion liquid (11), wherein the high-concentration gallium nitride nanowire dispersion liquid (11) is stored in the light-transmitting container (12).

2. The GaN nanowire-based optical limiting device according to claim 1, characterized in that: The light-transmitting container (12) is configured as a transparent quartz container.

3. An optical limiting device based on gallium nitride nanowires, characterized in that: The invention comprises a light-transmitting substrate (13), on the surface of which an anhydrous gallium nitride nanowire layer (14) is arranged.

4. The gallium nitride nanowire-based optical limiting device according to claim 3, characterized in that: The light-transmitting substrate (13) is configured as a transparent quartz substrate or a sapphire substrate.

5. The GaN nanowire-based optical limiting device according to claim 3, characterized in that: It also includes an edge seal (15) and a light-transmitting cover (16), wherein the light-transmitting cover (16) is covered on the surface of the anhydrous gallium nitride nanowire layer (14), and the edge seal (15) is arranged around the edge of the anhydrous gallium nitride nanowire layer (14) and is located between the light-transmitting cover (16) and the light-transmitting substrate (13).

6. The GaN nanowire-based optical limiting device according to claim 5, characterized in that: The edge sealing (15) is configured as a silicone edge sealing, a hot melt adhesive edge sealing or a glass adhesive edge sealing, and the light-transmitting cover (16) is configured as a transparent quartz cover plate or a sapphire cover plate.

7. The GaN nanowire-based optical limiting device according to claim 3, characterized in that: The anhydrous gallium nitride nanowire layer (14) is formed by evaporating water from a high-concentration gallium nitride nanowire dispersion liquid spin-coated on a light-transmitting substrate.

8. A nonlinear light absorption testing device, characterized in that: The invention comprises a pulse laser (2), an aperture (3), a laser attenuation device (4), a beam splitter (5), a focusing lens (6), a first laser energy meter (9), a second laser energy meter (7), a collecting lens (10), and a gallium nitride nanowire-based optical limiting device (1) as claimed in any one of claims 1 to 7, wherein the pulse laser (2), the aperture (3), the laser attenuation device (4), the beam splitter (5), the focusing lens (6), the optical limiting device (1), the collecting lens (10) and the second laser energy meter (7) are arranged in sequence along a straight line, and the first laser energy meter (9) is located on the side of the beam splitter (5).

9. The nonlinear light absorption testing device according to claim 8, characterized in that: It also comprises a limiting device translation driving device (8) for driving the optical limiting device (1) to translate back and forth along the arrangement direction. The limiting device translation driving device (8) is located below the optical limiting device (1) and is drivingly connected to the optical limiting device (1).

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