Device capable of adjusting wafer edge etching range and wafer edge etching equipment
By designing an adjustable lower and upper adjustment ring device, the problem of fixed size of the shading component in the prior art is solved, flexible adjustment of the wafer edge etching range is achieved, and production efficiency and flexibility in process development is improved.
Patent Information
- Application Number
- CN202421801889.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-26
- Publication Date
- 2025-05-09
- Estimated Expiration
- 2034-07-26
AI Technical Summary
The size of the shading components used to control the crystal edge etching range on existing crystal edge etching machines is fixed and cannot meet different process requirements, resulting in inadequate process development and production efficiency.
A device that can adjust the crystal edge etch range is designed, including a lower adjustment ring and an upper adjustment ring arranged in layers, which can be moved vertically through independent driving components to adjust the occlusion range of the wafer surface edge.
By adjusting the position of the upper and lower adjustment rings, the etching range of the wafer edges is flexibly adjusted to meet different process needs, and there is no need to replace the shielding parts, which improves production efficiency and reduces the cumbersome process of opening the cavity maintenance.
Smart Images
Figure CN222851382U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a device capable of adjusting a crystal edge etching range and crystal edge etching equipment. Background Art
[0002] The crystal edge etching process is a common process in semiconductor etching, which usually uses plasma to etch specific areas on the edge of the wafer. At present, the size of the shielding components used to control the crystal edge etching range on the crystal edge etching machine is fixed. Due to the different requirements for the crystal edge etching range in the actual process flow, the machine needs to replace shielding components of different sizes and models to adjust the crystal edge etching range. Each time it is replaced, the cavity needs to be opened for PM (preventive maintenance). The process that can be met is single, which seriously affects process development and production efficiency.
[0003] In view of this, it is necessary to propose a device capable of adjusting the crystal edge etching range and a crystal edge etching equipment to solve the above problems. Utility Model Content
[0004] The utility model aims to provide a device and a crystal edge etching equipment capable of adjusting the crystal edge etching range, so as to improve the problem that the existing shielding components for controlling the crystal edge etching range cannot meet the requirements of different crystal edge etching ranges.
[0005] The utility model provides a device capable of adjusting the crystal edge etching range, comprising:
[0006] A lower plate for supporting the wafer;
[0007] A plurality of lower adjustment rings are arranged in layers, the lower adjustment ring located in the innermost layer is fixedly or movably arranged outside the lower plate, and the lower adjustment rings except the lower adjustment ring located in the innermost layer are respectively connected to the lower driving assembly to individually drive the corresponding lower adjustment ring to move vertically;
[0008] an upper plate, located above the wafer;
[0009] A plurality of upper adjustment rings are arranged in layers, and the upper adjustment ring located in the innermost layer is fixedly or movably arranged outside the upper plate. The upper adjustment rings except the upper adjustment ring located in the innermost layer are respectively connected to the upper driving assembly to individually drive the corresponding upper adjustment ring to move vertically.
[0010] In a possible embodiment, the difference between the inner and outer diameters of each upper adjustment ring except the innermost upper adjustment ring is in the range of 1 mm to 3 mm; and / or,
[0011] The difference between the inner and outer diameters of each lower adjustment ring except the innermost lower adjustment ring is in the range of 1 mm to 3 mm.
[0012] In a possible embodiment, an upper spacing is formed between two adjacent upper adjustment rings, and a width of the upper spacing ranges from 0.05 mm to 0.15 mm; and / or,
[0013] A lower spacing is formed between two adjacent lower adjustment rings, and the width of the lower spacing is in the range of 0.05mm-0.15mm.
[0014] In a possible embodiment, the inner diameter of the innermost upper adjustment ring is in the range of 248 mm to 252 mm, and the outer diameter of the innermost upper adjustment ring is in the range of 290 mm to 296 mm; and / or,
[0015] The inner diameter of the lower adjustment ring located in the innermost layer ranges from 248mm to 252mm, and the outer diameter of the lower adjustment ring located in the innermost layer ranges from 290mm to 296mm.
[0016] In a possible embodiment, in two adjacent upper adjustment rings, in the wafer edge etching process, the distance between the upper adjustment ring located at the inner layer and the wafer is smaller than the distance between the upper adjustment ring located at the outer layer and the wafer; and / or,
[0017] In the wafer edge etching process, of two adjacent lower adjustment rings, the distance between the lower adjustment ring located at the inner layer and the wafer is smaller than the distance between the lower adjustment ring located at the outer layer and the wafer.
[0018] In a possible embodiment, the device further includes an upper expansion electrode, wherein the upper expansion electrode is arranged around an upper adjustment ring located at the outermost layer; and / or,
[0019] The device further comprises a lower expansion electrode, which is arranged around the lower adjustment ring located at the outermost layer.
[0020] In a possible embodiment, in the case where the upper extension electrode is provided, an upper gap is formed between the upper extension electrode and the upper adjustment ring located at the outermost layer, and the width of the upper gap ranges from 0.05 mm to 0.15 mm;
[0021] In the case where the lower extension electrode is provided, a lower gap is formed between the lower extension electrode and the lower adjustment ring located at the outermost layer, and the width of the lower gap ranges from 0.05 mm to 0.15 mm.
[0022] In a possible embodiment, the upper adjustment ring and the lower adjustment ring are made of ceramic; and / or,
[0023] The upper plate and the lower plate are made of ceramic.
[0024] In a possible embodiment, an outer surface of the upper adjustment ring and / or an outer surface of the lower adjustment ring is provided with an etching-resistant protective layer.
[0025] The utility model also provides a crystal edge etching device, comprising:
[0026] Cavity, hollow inside;
[0027] An etching gas generating device, disposed in the chamber and used to generate etching gas;
[0028] A device capable of adjusting the crystal edge etching range as in any of the above embodiments.
[0029] The beneficial effects of the device with adjustable crystal edge etching range provided by the utility model are: by vertically moving and adjusting the upper adjusting ring, the shielding range of the upper adjusting ring on the edge area of the upper surface of the wafer can be adjusted, that is, the etching range exposed by the edge of the upper surface of the wafer is adjusted; by vertically moving and adjusting the lower adjusting ring, the shielding range of the lower surface of the wafer by the lower adjusting ring on the edge area can be adjusted, that is, the etching range exposed by the edge of the lower surface of the wafer is adjusted, thereby meeting the process requirements of different crystal edge etching ranges, without the need to replace the shielding components, avoiding the tedious process of opening the cavity for maintenance, and improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] Figure 1 It is a schematic diagram of the device capable of adjusting the crystal edge etching range of the utility model.
[0031] Figure 2 This is a state diagram of the upper adjustment ring located at the outermost layer after it moves upward and the lower adjustment ring located at the outermost layer after it moves downward in the device capable of adjusting the crystal edge etching range of the utility model.
[0032] Figure 3 This is a state diagram of the device for adjusting the crystal edge etching range of the utility model after the two upper adjustment rings located on the outer layer are moved upward and the two lower adjustment rings located on the outer layer are moved downward.
[0033] Figure 4 The utility model is a perspective view of the lower plate, the lower adjustment ring and the lower driving assembly in the device with adjustable crystal edge etching range in the top view.
[0034] Explanation of the reference numerals: 110, lower plate; 120, lower adjustment ring; 130, upper plate; 140, upper adjustment ring; 150, lower drive assembly; 160, upper drive assembly; 170, upper extension electrode; 180, lower extension electrode; 191, first drive assembly; 192, second drive assembly; 200, wafer; 300, etching gas. DETAILED DESCRIPTION
[0035] In order to make the purpose, technical solution and advantages of the embodiments of the utility model clearer, the technical solution in the embodiments of the utility model will be described clearly and completely below. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0036] In view of the problems existing in the prior art, the embodiment of the utility model provides a device capable of adjusting the crystal edge etching range, see Figure 1 and Figure 2 The device includes: a lower plate 110, a plurality of lower adjustment rings 120, an upper plate 130 and a plurality of upper adjustment rings 140. The lower plate 110 is used to support the wafer 200. The plurality of lower adjustment rings 120 are arranged in layers. The lower adjustment rings 120 located in the innermost layer are fixedly or movably arranged outside the lower plate 110. The lower adjustment rings 120 except the lower adjustment rings 120 located in the innermost layer are respectively connected to the lower driving assembly 150 to individually drive the corresponding lower adjustment rings 120 to move vertically. The upper plate 130 is located above the wafer 200. The plurality of upper adjustment rings 140 are arranged in layers. The upper adjustment rings 140 located in the innermost layer are fixedly or movably arranged outside the upper plate 130. The upper adjustment rings 140 except the upper adjustment rings 140 located in the innermost layer are respectively connected to the upper driving assembly 160 to individually drive the corresponding upper adjustment rings 140 to move vertically. Specifically, the lower plate 110 and the upper plate 130 are arranged correspondingly and are circular in shape, the lower adjustment ring 120 and the upper adjustment ring 140 are arranged correspondingly one by one, and the outer diameter of the lower adjustment ring 120 located at the outermost layer and the outer diameter of the upper adjustment ring 140 located at the outermost layer are both less than or equal to the diameter of the wafer 200.
[0037] In this embodiment, the upper plate 130 and the plurality of upper adjustment rings 140 form a shielding area on the upper surface of the wafer 200, and the exposed area of the upper surface of the wafer 200 except the shielding area is the etching range of the edge of the upper surface of the wafer 200. The lower plate 110 and the plurality of lower adjustment rings 120 form a shielding area on the lower surface of the wafer 200, and the exposed area of the lower surface of the wafer 200 except the shielding area is the etching range of the edge of the lower surface of the wafer 200. The upper adjustment rings 140 and the lower adjustment rings 120 are respectively designed in a layered form, so that each upper adjustment ring 140 and each lower adjustment ring 120 can be independently adjusted in vertical movement. If more upper adjustment rings 140 are raised (increasing from the outside to the inside), the area of the blocked area on the upper surface of the wafer 200 becomes smaller, and the etching range of the edge of the upper surface of the wafer 200 becomes larger; if fewer upper adjustment rings 140 are raised (increasing from the outside to the inside), the area of the blocked area on the upper surface of the wafer 200 becomes larger, and the etching range of the edge of the upper surface of the wafer 200 becomes smaller; if more lower adjustment rings 120 are lowered (increasing from the outside to the inside), the area of the blocked area on the lower surface of the wafer 200 becomes smaller, and the etching range of the edge of the lower surface of the wafer 200 becomes larger; if fewer lower adjustment rings 120 are lowered (increasing from the outside to the inside), the area of the blocked area on the lower surface of the wafer 200 becomes larger, and the etching range of the edge of the lower surface of the wafer 200 becomes smaller. Therefore, by vertically moving and adjusting the upper adjustment ring 140 and the lower adjustment ring 120, the edge etching range of the upper and lower surfaces of the wafer 200 can be flexibly adjusted without replacing shielding components of different sizes and models. At the same time, it also avoids the tedious process of opening the cavity for preventive maintenance during replacement, thereby reducing downtime and improving production efficiency.
[0038] In one embodiment, see Figure 2 and Figure 3 The upper adjustment ring 140 located at the innermost layer can be fixedly mounted on the outer side of the upper plate 130, that is, the upper adjustment ring 140 located at the innermost layer does not need to be moved for adjustment; or, the upper adjustment ring 140 located at the innermost layer is connected to the first driving component 191, and the upper adjustment ring 140 located at the innermost layer is driven by the first driving component 191 to move vertically.
[0039] In another embodiment, see Figure 2 and Figure 3 The lower adjusting ring 120 located at the innermost layer can be fixedly mounted on the outer side of the lower plate 110, that is, the lower adjusting ring 120 located at the innermost layer does not need to be moved for adjustment; or, the lower adjusting ring 120 located at the innermost layer is connected to the second driving assembly 192, and the lower adjusting ring 120 located at the innermost layer is driven by the second driving assembly 192 to move vertically.
[0040] In some embodiments, an upper drive assembly 160 drives N upper adjustment rings 140 except the upper adjustment ring 140 located in the innermost layer to perform individual vertical movement adjustment, wherein N is a positive integer, N is greater than 1 and less than or equal to the total number of upper adjustment rings 140, that is, an upper drive assembly 160 drives multiple upper adjustment rings 140 except the upper adjustment ring 140 located in the innermost layer; or, an upper drive assembly 160 drives each upper adjustment ring 140 except the upper adjustment ring 140 located in the innermost layer; or, see Figure 2 Each upper adjustment ring 140 except the innermost upper adjustment ring 140 is respectively connected to at least one upper driving assembly 160, that is, each upper adjustment ring 140 except the innermost upper adjustment ring 140 is respectively configured with at least one upper driving assembly 160 to drive its vertical movement.
[0041] In other embodiments, a lower driving assembly 150 drives M lower adjusting rings 120 except the lower adjusting ring 120 located in the innermost layer to perform individual vertical movement adjustment, wherein M is a positive integer, M is greater than 1 and less than or equal to the total number of the lower adjusting rings 120, that is, a lower driving assembly 150 drives multiple lower adjusting rings 120 except the lower adjusting ring 120 located in the innermost layer; or, a lower driving assembly 150 drives each lower adjusting ring 120 except the lower adjusting ring 120 located in the innermost layer; or, see Figure 2 Each lower adjustment ring 120 except the innermost lower adjustment ring 120 is respectively connected to at least one lower driving assembly 150, that is, each lower adjustment ring 120 except the innermost lower adjustment ring 120 is respectively configured with at least one lower driving assembly 150 to drive its vertical movement.
[0042] In a preferred embodiment, see Figure 1 and Figure 2 , the inner and outer diameter difference range of each upper adjustment ring 140 except the upper adjustment ring 140 located in the innermost layer is 1mm-3mm; and / or, the inner and outer diameter difference range of each lower adjustment ring 120 except the lower adjustment ring 120 located in the innermost layer is 1mm-3mm. In this embodiment, for the upper adjustment ring 140 and the lower adjustment ring 120 except those located in the innermost layer, the inner and outer diameter difference range is set to 1mm-3mm, which is neither too wide to be difficult to adjust accurately, nor too narrow to limit the flexibility of adjustment. By separately moving and adjusting the upper adjustment ring 140 and the lower adjustment ring 120 vertically, the contact range of the etching gas 300 (for example, plasma) at the edge of the wafer 200 can be finely controlled to meet the process requirements of different crystal edge etching ranges, thereby improving the applicability of the device.
[0043] In one embodiment, see Figure 1 and Figure 2, an upper spacing is formed between two adjacent upper adjustment rings 140, and the width of the upper spacing is in the range of 0.05mm-0.15mm; and / or, a lower spacing is formed between two adjacent lower adjustment rings 120, and the width of the lower spacing is in the range of 0.05mm-0.15mm. The upper spacings between the upper adjustment rings 140 may be the same or different, and the lower spacings between the lower adjustment rings 120 may be the same or different, and are specifically set according to actual process requirements. In this embodiment, by reasonably setting the upper spacing and the lower spacing, the upper spacing and the lower spacing are not too small to cause friction and wear between the two adjacent upper adjustment rings 140 and the two adjacent lower adjustment rings 120, and the upper spacing and the lower spacing are not too large to cause the by-products generated by etching to penetrate into the gaps between the upper adjustment rings 140 and the gaps between the lower adjustment rings 120.
[0044] In yet another embodiment, see Figure 1 and Figure 2 , the inner diameter range of the upper adjustment ring 140 located in the innermost layer is 248mm-252mm, and the outer diameter range of the upper adjustment ring 140 located in the innermost layer is 290mm-296mm; and / or, the inner diameter range of the lower adjustment ring 120 located in the innermost layer is 248mm-252mm, and the outer diameter range of the lower adjustment ring 120 located in the innermost layer is 290mm-296mm. In this embodiment, the inner diameter ranges of the upper adjustment ring 140 located in the innermost layer and the lower adjustment ring 120 located in the innermost layer are reasonably set to meet the conventional maximum etching range requirements.
[0045] In a specific embodiment, see Figure 3 In the wafer edge etching process, the spacing between the inner upper adjustment ring 140 and the wafer 200 is smaller than the spacing between the outer upper adjustment ring 140 and the wafer 200 in the two adjacent upper adjustment rings 140; and / or, in the wafer edge etching process, the spacing between the inner lower adjustment ring 120 and the wafer 200 in the two adjacent lower adjustment rings 120 is smaller than the spacing between the outer lower adjustment ring 120 and the wafer 200 in the two adjacent lower adjustment rings 120. Figure 3Taking the middle lower adjustment ring 120 as an example, from the outside to the inside, there are the first to the fifth lower adjustment rings 120, wherein the first lower adjustment ring 120 and the second lower adjustment ring 120 move downward and the distance between the two and the wafer 200 is large, the distance between the first lower adjustment ring 120 and the wafer 200 is greater than the distance between the second lower adjustment ring 120 and the wafer 200, and the distance between the second lower adjustment ring 120 and the wafer 200 is greater than the distance between the third lower adjustment ring 120 and the wafer 200. Outside the third lower adjustment ring 120, the plasma reacts with the uncovered edge portion of the wafer 200 and produces by-products. Since the distance between each lower adjustment ring 120 and the wafer 200 gradually increases from the inside to the outside, the by-products can be discharged in time with the flow of plasma, which can effectively prevent the by-products generated by etching from accumulating in the etching area and affecting the etching effect. The distance between each upper adjustment ring 140 and the wafer 200 gradually increases from the inside to the outside, and its principle is similar to that of the lower adjustment ring 120 and will not be repeated here.
[0046] In a preferred embodiment, see Figure 1 and Figure 2 The device further includes an upper expansion electrode 170, which is disposed around the upper adjustment ring 140 located at the outermost layer; and / or, the device further includes a lower expansion electrode 180, which is disposed around the lower adjustment ring 120 located at the outermost layer. The electric field distribution between the upper expansion electrode 170 and the lower expansion electrode 180 can be adjusted to adjust the density and distribution of the plasma, thereby reducing the phenomenon of edge over-etching or under-etching and improving etching uniformity.
[0047] In a specific embodiment, see Figure 1 In the case of setting the upper expansion electrode 170, an upper gap is formed between the upper expansion electrode 170 and the upper adjustment ring 140 located at the outermost layer, and the width range of the upper gap is 0.05mm-0.15mm; in the case of setting the lower expansion electrode 180, a lower gap is formed between the lower expansion electrode 180 and the lower adjustment ring 120 located at the outermost layer, and the width range of the lower gap is 0.05mm-0.15mm. By reasonably setting the gap width between the upper expansion electrode 170 and the upper adjustment ring 140 located at the outermost layer, and between the lower expansion electrode 180 and the lower adjustment ring 120 located at the outermost layer, the infiltration of byproducts generated by etching due to excessively large upper and lower gaps can be avoided, and a more uniform plasma distribution and etching effect can be achieved.
[0048] See also Figure 1 and Figure 4, there are five upper adjustment rings 140 and five lower adjustment rings 120, the difference between the inner and outer diameters in the above parameters is 1.5mm, and the upper gap width between two adjacent upper adjustment rings 140 and the lower gap width between two adjacent lower adjustment rings 120 are both 0.1mm. The inner diameter of the upper adjustment ring 140 located in the innermost layer is 250mm and the outer diameter is 296mm, and the inner diameters of the other upper adjustment rings 140 are 296.1mm, 297.7mm, 299.3mm, and 300.9mm from the inside to the outside. The inner diameter of the lower adjustment ring 120 located in the innermost layer is 250mm and the outer diameter is 296mm, and the inner diameters of the other lower adjustment rings 120 are 296.1mm, 297.7mm, 299.3mm, and 300.9mm from the inside to the outside.
[0049] In one embodiment, the upper adjustment ring 140 and the lower adjustment ring 120 are made of ceramics; and / or the upper plate 130 and the lower plate 110 are made of ceramics. Ceramics are an inorganic non-metallic material with excellent properties such as high strength, high hardness, high wear resistance, high corrosion resistance, and high temperature resistance.
[0050] Preferably, the outer surface of the upper adjustment ring 140 and / or the outer surface of the lower adjustment ring 120 is provided with an etching-resistant protective layer. Preferably, the protective layer is yttrium trioxide (Y2O3), which has good etching resistance and good particle performance, avoiding problems such as particle contamination caused by component wear.
[0051] In some embodiments, see Figure 2 and Figure 3 The upper driving assembly 160 is a cylinder, an electric telescopic rod, or a motor drives the upper connecting rod connected to the corresponding upper adjusting ring 140 to move along the vertical upper track. The upper driving assembly 160 is located at the top of the corresponding upper adjusting ring 140. At least two upper driving assemblies 160 are evenly spaced and distributed on each upper adjusting ring 140 except the innermost upper adjusting ring 140 to improve the stability of the support of the upper adjusting ring 140.
[0052] In other embodiments, see Figure 2 and Figure 4 The lower driving assembly 150 is a cylinder, an electric telescopic rod, or a motor drives the lower connecting rod connected to the corresponding lower adjusting ring 120 to move along the vertically arranged lower track. The lower driving assembly 150 is located at the bottom of the corresponding lower adjusting ring 120. At least two lower driving assemblies 150 are evenly spaced and distributed on each lower adjusting ring 120 except the lower adjusting ring 120 located at the innermost layer, so as to improve the stability of the support of the lower adjusting ring 120.
[0053] In some embodiments, see Figure 2 and Figure 3The first driving assembly 191 is a cylinder, an electric telescopic rod, or a motor drives the first connecting rod connected to the innermost upper adjusting ring 140 to move along the vertically arranged first track. The first driving assembly 191 is arranged on the top of the innermost upper adjusting ring 140, and at least two first driving assemblies 191 are evenly spaced on the innermost upper adjusting ring 140 to improve the support stability of the innermost upper adjusting ring 140.
[0054] In other embodiments, see Figure 2 and Figure 3 The second driving assembly 192 is a cylinder, an electric telescopic rod, or a motor drives the second connecting rod connected to the innermost lower adjusting ring 120 to move along the second vertically arranged track. The second driving assembly 192 is arranged at the bottom of the innermost lower adjusting ring 120, and at least two second driving assemblies 192 are evenly spaced on the innermost lower adjusting ring 120 to improve the support stability of the innermost lower adjusting ring 120.
[0055] The adjustment principle of the crystal edge etching range of the device capable of adjusting the crystal edge etching range is explained below in conjunction with a specific embodiment. In this embodiment, the upper adjustment ring 140 located at the innermost layer and the lower adjustment ring 120 located at the innermost layer can move vertically.
[0056] like Figure 1 As shown in FIG. 1 , it shows the state before each upper adjustment ring 140 is moved upward. The upper plate 130 and all the upper adjustment rings 140 form a shielding area on the upper surface of the wafer 200. At this time, the etching range of the edge of the upper surface of the wafer 200 is the smallest. Move the upper adjustment ring 140 located at the outermost layer upward to increase the distance between the upper adjustment ring 140 located at the outermost layer and the wafer 200, as shown in FIG. Figure 2 As shown in FIG. 1 , it shows the state after the upper adjustment ring 140 located at the outermost layer is moved upward. At this time, the upper plate 130 and the upper adjustment rings 140 other than the upper adjustment ring 140 located at the outermost layer form a shielding area on the upper surface of the wafer 200, and the etching range of the edge of the upper surface of the wafer 200 is relatively small. If the etching range of the edge of the upper surface of the wafer 200 is to be further increased, the two upper adjustment rings 140 located at the outer layer can be moved upward, such as Figure 3 As shown, it shows the state after the two upper adjustment rings 140 located on the outer layer are moved up, and the distance between the two upper adjustment rings 140 located on the outer layer and the wafer 200 is increased. At this time, the upper plate 130 and the upper adjustment rings 140 except the two upper adjustment rings 140 located on the outer layer constitute a shielding area on the upper surface of the wafer 200. The area of the shielding area on the upper surface of the wafer 200 becomes smaller, and the area of the exposed area on the upper surface of the wafer 200 becomes larger, that is, the etching range of the edge of the upper surface of the wafer 200 becomes larger.
[0057] like Figure 1As shown in FIG. 1 , it shows the state before each lower adjustment ring 120 is moved downward. The lower plate 110 and all the lower adjustment rings 120 form a shielding area on the lower surface of the wafer 200. At this time, the etching range of the edge of the lower surface of the wafer 200 is the smallest. Move the lower adjustment ring 120 located at the outermost layer downward, and increase the distance between the lower adjustment ring 120 located at the outermost layer and the wafer 200, as shown in FIG. Figure 2 As shown in FIG. 1 , it shows the state after the lower adjustment ring 120 located at the outermost layer is moved downward. At this time, the lower plate 110 and the lower adjustment rings 120 except the lower adjustment ring 120 located at the outermost layer form a shielding area of the lower surface of the wafer 200, and the etching range of the edge of the lower surface of the wafer 200 is small. If the etching range of the edge of the lower surface of the wafer 200 is to be further increased, the two lower adjustment rings 120 located at the outer layer can be moved downward, such as Figure 3 As shown, it shows the state after the two lower adjustment rings 120 located on the outer layer are moved downward, and the distance between the two lower adjustment rings 120 located on the outer layer and the wafer 200 is increased. At this time, the lower plate 110 and the lower adjustment rings 120 except the two lower adjustment rings 120 located on the outer layer constitute a shielding area on the lower surface of the wafer 200. The area of the shielding area on the lower surface of the wafer 200 becomes smaller, and the area of the exposed area on the lower surface of the wafer 200 becomes larger, so that the etching range of the edge of the lower surface of the wafer 200 becomes larger.
[0058] The technical effect of the device capable of adjusting the crystal edge etching range of the utility model is explained in detail below.
[0059] 1. The upper adjustment ring 140 and the lower adjustment ring 120 are designed to be arranged in layers. Each upper adjustment ring 140 and each lower adjustment ring 120 except those located in the innermost layer are equipped with an independent driving component to perform individual vertical movement control on each upper adjustment ring 140 and each lower adjustment ring 120 except those located in the innermost layer, so as to adjust the size of the shielding area on the upper surface and the lower surface of the wafer 200. Different crystal edge etching range processes can be implemented in the same crystal edge etching chamber to meet the crystal edge etching requirements in process development. There is no need to replace shielding components of different sizes and models, thereby improving process development efficiency and saving development and production costs.
[0060] 2. By reasonably setting the inner and outer diameter difference of the upper adjustment ring 140 and the lower adjustment ring 120 except the innermost layer and the inner diameter range of the upper adjustment ring 140 and the lower adjustment ring 120 located in the innermost layer, the process requirements of various different crystal edge etching ranges can be met. By reasonably setting the horizontal spacing between adjacent adjustment rings, the by-products can be prevented from accumulating in the etching area and being unable to flow out.
[0061] 3. The upper adjustment ring 140 and the lower adjustment ring 120 use ceramic as the base material and Y2O3 as the protective layer to increase the service life of the device and avoid particle contamination caused by component wear.
[0062] The utility model also provides a crystal edge etching device, including: an internally hollow cavity, an etching gas generating device and a device capable of adjusting the crystal edge etching range as in any of the above embodiments, wherein the etching gas generating device is disposed in the cavity and is used to generate an etching gas 300, wherein the etching gas 300 is plasma, etc.
[0063] Although the embodiments of the utility model are described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are within the scope and spirit of the utility model described in the claims. Moreover, the utility model described herein may have other embodiments and may be implemented or realized in a variety of ways. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with ordinary skills in the field to which the utility model belongs. The words "including" and the like used herein mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. The "multiple" used herein refers to two or more.
Claims
1. A device capable of adjusting the crystal edge etching range, characterized in that: include: A lower plate for supporting the wafer; A plurality of lower adjustment rings are arranged in layers, the lower adjustment ring located in the innermost layer is fixedly or movably arranged outside the lower plate, and the lower adjustment rings except the lower adjustment ring located in the innermost layer are respectively connected to the lower driving assembly to individually drive the corresponding lower adjustment ring to move vertically; an upper plate, located above the wafer; A plurality of upper adjustment rings are arranged in layers, and the upper adjustment ring located in the innermost layer is fixedly or movably arranged outside the upper plate. The upper adjustment rings except the upper adjustment ring located in the innermost layer are respectively connected to the upper driving assembly to individually drive the corresponding upper adjustment ring to move vertically.
2. The device for adjusting the crystal edge etching range according to claim 1, characterized in that: The difference between the inner and outer diameters of each upper adjustment ring except the innermost upper adjustment ring is in the range of 1 mm to 3 mm; and / or, The difference between the inner and outer diameters of each lower adjustment ring except the innermost lower adjustment ring is in the range of 1 mm to 3 mm.
3. The device for adjusting the crystal edge etching range according to claim 1, characterized in that: An upper spacing is formed between two adjacent upper adjustment rings, and the width of the upper spacing ranges from 0.05 mm to 0.15 mm; and / or, A lower spacing is formed between two adjacent lower adjustment rings, and the width of the lower spacing is in the range of 0.05mm-0.15mm.
4. The device for adjusting the crystal edge etching range according to claim 1, characterized in that: The inner diameter of the innermost upper adjustment ring is in the range of 248 mm to 252 mm, and the outer diameter of the innermost upper adjustment ring is in the range of 290 mm to 296 mm; and / or, The inner diameter of the lower adjustment ring located in the innermost layer ranges from 248mm to 252mm, and the outer diameter of the lower adjustment ring located in the innermost layer ranges from 290mm to 296mm.
5. The device for adjusting the crystal edge etching range according to claim 1, characterized in that: In the wafer edge etching process, of two adjacent upper adjustment rings, the distance between the inner upper adjustment ring and the wafer is smaller than the distance between the outer upper adjustment ring and the wafer; and / or, In the wafer edge etching process, of two adjacent lower adjustment rings, the distance between the lower adjustment ring located at the inner layer and the wafer is smaller than the distance between the lower adjustment ring located at the outer layer and the wafer.
6. The device for adjusting the crystal edge etching range according to claim 1, characterized in that: It also includes an upper expansion electrode, which is arranged around the upper adjustment ring located at the outermost layer; and / or, It also includes a lower expansion electrode, which is arranged around the lower adjustment ring located at the outermost layer.
7. The device for adjusting the crystal edge etching range according to claim 6, characterized in that: In the case where the upper extension electrode is provided, an upper gap is formed between the upper extension electrode and the upper adjustment ring located at the outermost layer, and the width of the upper gap ranges from 0.05 mm to 0.15 mm; In the case where the lower extension electrode is provided, a lower gap is formed between the lower extension electrode and the lower adjustment ring located at the outermost layer, and the width of the lower gap ranges from 0.05 mm to 0.15 mm.
8. The device for adjusting the crystal edge etching range according to claim 1, characterized in that: The upper adjustment ring and the lower adjustment ring are made of ceramic; and / or, The upper plate and the lower plate are made of ceramic.
9. The device for adjusting the crystal edge etching range according to any one of claims 1 to 8, characterized in that: The outer surface of the upper adjustment ring and / or the outer surface of the lower adjustment ring is provided with an etching-resistant protective layer.
10. A crystal edge etching device, characterized in that: include: Cavity, hollow inside; An etching gas generating device, disposed in the chamber and used to generate etching gas; A device capable of adjusting the crystal edge etching range as claimed in any one of claims 1 to 9.