Atomic layer deposition apparatus

Abstract

The utility model provides atomic layer deposition equipment. The equipment comprises an outer cavity, an inner reaction cavity, a base, a lifting plate, a plurality of ejector pins, a plurality of supporting rods and a lifting driving assembly, a wafer access channel is arranged on the outer cavity; the inner reaction cavity is arranged in the outer cavity and comprises an annular side wall and a top cover capable of sealing the top of the annular side wall; the base is fixed in the inner reaction cavity; the lifting plate is located in the inner reaction cavity and annularly arranged on the periphery of the base; the plurality of thimbles are arranged outside the base, one ends of the thimbles are connected with the lifting plate, and the other ends extend to contact with the bottom surface of the wafer; the supporting rods are located outside the ejector pins, one ends of the supporting rods are connected with the lifting plate, the other ends of the supporting rods are connected with the top cover, and the distance between at least two supporting rods is larger than the diameter of the wafer. The lifting driving assembly is connected with the lifting plate, extends downwards to the outside of the inner reaction cavity, and can lift the wafer to the height corresponding to the wafer inlet and outlet channel. The equipment structure can be greatly simplified, and the use cost of the equipment is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing equipment, in particular to an atomic layer deposition equipment. Background Art

[0002] Atomic layer deposition (ALD) is a technology that alternately introduces two or more gaseous precursor pulses of the reaction material into the deposition chamber, and the active components in the gaseous precursor pulses are chemically adsorbed on the substrate (such as a wafer) and react with each other to form a film. Due to its excellent film thickness controllability, film uniformity and consistency, it is increasingly widely used in the semiconductor field where the line width is constantly shrinking.

[0003] The atomic layer deposition equipment has strict process requirements for the process position and transfer position of the wafer, so the precision of the up and down transmission control of the wafer is strictly required. Existing atomic layer deposition equipment generally uses a base to support the wafer, and a plurality of ejectors that penetrate the base are arranged on the base. During the deposition process, the ejector falls into the base, and the wafer is attached to the surface of the base. This is the process position of the wafer. When the wafer needs to be unloaded, the base needs to be lowered and the ejector raised so that the wafer can be detached from the surface of the base and lifted to the required transfer position. The robotic arm extends into the reaction chamber to transfer the wafer to the outside of the equipment, and then the ejector drops back into the base, and the base drops. Since the lifting and lowering of the ejector and the base are achieved through different transmission mechanisms, this leads to a complex equipment structure and very inconvenient maintenance.

[0004] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the utility model and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of the utility model. Utility Model Content

[0005] In view of the shortcomings of the prior art mentioned above, the purpose of the utility model is to provide an atomic layer deposition device to solve the problem that the existing atomic layer deposition device realizes the transfer of the wafer between the process position and the transfer position by lifting the ejector pin and the base, and the lifting of the ejector pin and the base is achieved by different transmission mechanisms, which leads to complex equipment structure and very inconvenient maintenance.

[0006] To achieve the above-mentioned purpose and other related purposes, the utility model provides an atomic layer deposition device, which includes an outer chamber, an inner reaction chamber, a base for carrying wafers, a lifting plate, a plurality of ejectors, a plurality of support rods and a lifting drive assembly; the outer chamber is provided with a wafer entry and exit channel; the inner reaction chamber is arranged in the outer chamber, and includes an annular side wall and a top cover that can close the top of the annular side wall; the base is fixed in the inner reaction chamber; the lifting plate is located in the inner reaction chamber and is arranged around the outer periphery of the base; the plurality of ejectors are arranged outside the base, and one end is connected to the lifting plate, and the other end extends vertically upward to contact with the bottom surface of the wafer; the plurality of support rods are located outside the ejectors, one end of the support rods is connected to the lifting plate, and the other end is connected to the top cover, and the distance between at least two support rods is greater than the diameter of the wafer; the lifting drive assembly is connected to the lifting plate and extends downward to the outside of the inner reaction chamber, and the lifting drive assembly can lift the wafer to a height corresponding to the wafer entry and exit channel.

[0007] Optionally, the inner reaction chamber and the outer chamber are fixed on the same bottom surface.

[0008] Optionally, more than three ejector pins are evenly spaced and arranged on the same circumferential surface and are adjacent to the base.

[0009] Optionally, three or more support rods are arranged adjacent to the annular side wall of the inner reaction chamber.

[0010] Optionally, the support rod and the top cover are threadedly connected.

[0011] Optionally, an outer peripheral surface of the lifting plate is provided with an inwardly recessed recess.

[0012] Optionally, the top cover is provided with a gas inlet channel for conveying gas to the inner reaction chamber.

[0013] Optionally, the inner reaction chamber and the outer chamber are connected to the same exhaust pump.

[0014] Optionally, the lifting drive assembly includes a base, a plurality of connecting rods, a plurality of elastic sealing tubes, and a lifting power unit; one end of the plurality of connecting rods is connected to the lifting plate, and the other end extends downward to be connected to the base located outside the inner reaction chamber; the elastic sealing tubes are respectively sleeved on the periphery of the connecting rods, and one end is connected to the bottom of the inner reaction chamber, and the other end is connected to the base, and the lifting power unit is connected to the bottom of the base.

[0015] Optionally, the elastic sealing tube includes a bellows, and the lifting power unit includes one of a pneumatic cylinder and an electric cylinder.

[0016] Optionally, the lifting drive assembly further includes a guide shaft, one end of which is connected to the connecting rod, and the other end of which is connected to the lifting power unit.

[0017] As described above, the atomic layer deposition device provided by the utility model has the following beneficial effects: the atomic layer deposition device provided by the utility model has an improved structural design, and only one set of transmission devices is required to realize the transfer of wafers between the process position and the transfer position, which can greatly simplify the device structure and reduce the cost of using the device. At the same time, the ejector pin of the utility model is arranged on the periphery of the base, so there is no need to set a through hole for the ejector pin to pass through on the base, which helps to improve the heating uniformity of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 Shown is a schematic diagram of the cross-sectional structure of an atomic layer deposition device provided by the present invention in an example.

[0019] Figure 2 Shown is a schematic diagram of the positional relationship between the ejector pin and the support rod on the lifting plate in the atomic layer deposition device provided by the utility model.

[0020] Figure 3 Shown is a structural schematic diagram of a lifting drive component of an atomic layer deposition device provided by the present invention in an example. DETAILED DESCRIPTION

[0021] The following is an explanation of the implementation of the present invention through specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0022] It should be noted that the diagrams provided in this embodiment are only used to illustrate the basic concept of the utility model in a schematic manner, and the diagrams only show the components related to the utility model rather than the number, shape and size of the components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the layout of the components may be more complicated. In order to make the diagrams as concise as possible, not all structures are marked in the drawings.

[0023] like Figure 1 As shown, the utility model provides an atomic layer deposition device, which includes an outer chamber 11, an inner reaction chamber located inside the outer chamber 11, a base 14 for carrying a wafer 13, a lifting plate 15, a plurality of ejector pins 16, a plurality of support rods 17 and a lifting drive assembly 18.

[0024] The outer cavity 11 and the inner reaction cavity may be generally hollow cylindrical structures. Both may be made of metal materials such as stainless steel and aluminum alloy, and the inner surface of the cavity may be plated with a corrosion-resistant coating such as ceramic. The outer cavity 11 may isolate the inner reaction cavity from the external environment, reducing the adverse effects of the external environment on the deposition process. The outer cavity 11 is provided with a wafer inlet and outlet channel, and the wafer inlet and outlet channel is, for example, a gate valve 111 provided on the side wall of the outer cavity 11. It should be noted that the channels for the wafer 13 to enter and exit may be the same or different channels. For example, in some examples, a channel for the wafer 13 to enter and a channel for the wafer 13 to move out are provided at the symmetrical ends of the side wall of the outer cavity 11. This independent structure of the inlet and outlet channels facilitates the transfer of wafers in different process equipment. The outer cavity 11 is also provided with an air inlet channel and an exhaust channel. The air inlet channel is used to transport the reaction material to the inner reaction cavity, which may be an air inlet provided on the top or side wall of the outer cavity 11, or may also be a diffuser including a preliminary diffusion of the reaction gas. The outer chamber 11 may also be provided with an inert gas inlet channel connected to an inert gas source to fill the outer chamber 11 with inert gas, which surrounds the periphery of the inner reaction chamber and can better isolate the inner reaction chamber from the external atmosphere. The exhaust channel is connected to a vacuum pump to maintain the inner part of the outer chamber 11 at a desired vacuum degree. In some examples, a heating and / or heat preservation device may also be provided on the inner surface of the outer chamber 11 to maintain the temperature around the inner reaction chamber at a suitable level. Alternatively, the inner reaction chamber may be heated and insulated by introducing heated inert gas into the outer chamber 11.

[0025] The inner reaction chamber is arranged in the outer chamber 11, and its side wall has a spacing with the side wall of the outer chamber 11. The space where the spacing is located is in a vacuum state during the thin film deposition process, and an inert gas can be introduced into the space. The inner reaction chamber provides a space for performing an atomic layer deposition process. The inner reaction chamber includes an annular side wall 121 and a top cover 122 that can close the top of the annular side wall 121. That is, the top cover 122 is detachably arranged on the top of the annular side wall 121. In some examples, a groove is provided on the top circumferential surface of the annular side wall 121, and a protrusion that can be correspondingly embedded in the groove is provided on the bottom surface of the top cover 122. And to ensure the sealing of the inner reaction chamber during the deposition process, the top cover 122 and / or the annular side wall 121 can be provided with a sealing ring on the corresponding contact surface. The inner reaction chamber is also provided with an air inlet channel and an exhaust channel, for example, the air inlet channel is located at the top or side wall of the inner reaction chamber, and the exhaust channel is, for example, arranged on the bottom surface of the inner reaction chamber.

[0026] The base 14 is fixed in the inner reaction chamber. The base 14 is generally disc-shaped and has a bearing surface that is smaller than the surface area of ​​the wafer 13. In a preferred example, the bearing surface of the base 14 is consistent with the effective device area (the area for making devices) of the wafer 13. The base 14 can be fixed to the bottom surface of the inner reaction chamber by fasteners such as screws. In some examples, the bottom surface of the inner reaction chamber is provided with a groove, and the base 14 is embedded in the groove in a detachable manner. The base 14 can be provided with a vacuum adsorption hole for adsorbing the wafer 13, or an electrode is provided inside to fix the wafer 13 by electrostatic adsorption. In a preferred example, a heating device is also provided in the base 14 to heat the wafer 13 when necessary. The heating device is, for example, a heating resistance wire spirally wound in the base 14.

[0027] The lifting plate 15 is located in the inner reaction chamber and is arranged around the outer periphery of the base 14. That is, a through hole 152 is arranged in the center of the lifting plate 15 for the base 14 to pass through. The lifting plate 15 is, for example, a metal plate made of the same material as the inner reaction chamber, such as a stainless steel plate.

[0028] The multiple ejector pins 16 are arranged outside the base 14, and one end is connected to the lifting plate 15, and the other end extends vertically upward to contact the bottom surface of the wafer 13. That is, the ejector pin 16 is located directly below the wafer 13. For example, in a preferred example, the ejector pin 16 is located directly below the edge area of ​​the wafer 13. The width of the edge area is, for example, within 2 cm. The ejector pin 16 is made of, for example, ceramic, silicon carbide, or a composite material with a ceramic layer coated on a metal surface. In order to better support the wafer 13, the surface of the ejector pin 16 in contact with the wafer 13 can be set to a circular or annular surface. The ejector pin 16 and the lifting plate 15 can be connected by fasteners such as screws. In a preferred example, the ejector pin 16 can be directly embedded in the groove of the lifting plate 15, which is more convenient for loading and unloading the ejector pin 16.

[0029] The plurality of support rods 17 are located outside the ejector pin 16. That is, the circumference of the support rods 17 is larger than the circumference of the ejector pin 16. One end of the support rod 17 is connected to the lifting plate 15, and the other end is connected to the top cover 122, and the distance between at least two support rods 17 is larger than the diameter of the wafer 13, so that the wafer 13 can be moved out from between the two support rods 17 when needed. The support rod 17 is preferably a metal rod, and its diameter is preferably larger than the size of the ejector pin 16, so that it has better mechanical strength and can provide better support for the top cover 122. The support rod 17 is connected to the top cover 122, and the top cover 122 is located above the wafer 13, so the height of the support rod 17 is greater than the height of the ejector pin 16, and the specific height difference depends on the process requirements. For example, if the reaction gas is transported to the surface of the wafer 13 in the inner reaction chamber through the air inlet channel located on the top cover 122, the height between the wafer 13 and the top cover 122 will be relatively small, for example, within 1 cm.

[0030] The lifting drive assembly 18 is connected to the lifting plate 15 and extends downward to the outside of the inner reaction chamber. The lifting drive assembly 18 can lift the wafer 13 to a height corresponding to the wafer inlet and outlet channel. Since the ejector pins 16 and the support rods 17 are both connected to the lifting plate 15, when the lifting plate 15 is lifted by the lifting drive assembly 18, the ejector pins 16 and the support rods 17 are lifted synchronously, the ejector pins 16 lift the wafer 13 from the base 14, and the support rods 17 lift the top cover 122 from the annular side wall 121.

[0031] The exemplary method of using the atomic layer deposition device provided in this embodiment is as follows:

[0032] During the thin film deposition process, the lifting plate 15 is lowered to the lowest position (the lowest position corresponds to the process position during thin film deposition), at which time the top cover 122 seals the top of the annular side wall 121, the inner reaction chamber is in a vacuum state, the wafer 13 is attached to the surface of the base 14 and the ejector pin 16, and the reaction gas is alternately transported to the inner reaction chamber in a pulsed manner, and settles and adsorbs on the surface of the wafer 13 to react and form a film;

[0033] When the deposition is finished, the vacuum degree of the inner reaction chamber drops to approximately the same as that of the outer chamber 11, and the lifting drive assembly 18 drives the lifting plate 15 to rise, and the ejector pins 16 and the support rods 17 on the lifting plate 15 rise synchronously, and the ejector pins 16 lift the wafer 13 and separate it from the base 14, and the support rods 17 lift the top cover 122 and separate it from the annular side wall 121, until the wafer 13 reaches the height of the wafer inlet and outlet channel corresponding to the outer chamber 11, and the mechanical arm located outside the equipment moves to the inside of the outer chamber 11, and extends under the wafer 13, and moves the wafer 13 out from between the two support rods 17; if it is necessary to continue the deposition process, the next wafer 13 is moved onto the ejector pins 16, and the lifting drive assembly 18 drives the lifting plate 15 to descend to the lowest position, and the wafer 13 falls onto the surface of the base 14, and the top cover 122 descends to close the inner reaction chamber, and thin film deposition begins after the internal vacuum degree and temperature conditions meet the process requirements.

[0034] The atomic layer deposition equipment provided by the utility model has an improved structural design, and only one set of transmission devices is needed to realize the transfer of wafers between the process position and the transfer position, which can greatly simplify the equipment structure and reduce the equipment use cost. At the same time, the ejector pin of the utility model is arranged on the periphery of the base, so there is no need to set a through hole for the ejector pin to pass through on the base, which helps to improve the heating uniformity of the wafer.

[0035] In some examples, the inner reaction chamber and the outer chamber 11 are fixed on the same bottom surface, or the inner reaction chamber and the outer chamber 11 share the same bottom surface. Therefore, the installation of structures such as the lifting drive assembly 18 only needs to pass through one bottom surface, which helps to further simplify the device structure.

[0036] In some examples, the top cover 122 is provided with an air inlet channel for conveying gas to the inner reaction chamber. The air inlet channel is, for example, a plurality of air inlet holes 123 provided on the top cover 122, and these air inlet holes 123 are connected to the air inlet pipeline to convey the reaction gas from the top cover 122 to the surface of the wafer 13 from top to bottom. In other examples, the reaction gas can also be conveyed to the inner reaction chamber through the air inlet provided on the annular side wall 121. In some examples, the top cover 122 can be provided with a device for diffusing and / or mixing the reaction gas, and the diffused and / or mixed gas is conveyed to the inner reaction chamber in a cross-flow manner.

[0037] In some examples, the inner reaction chamber and the outer chamber 11 are connected to the same exhaust pump 19. More specifically, for example, the exhaust channel of the inner reaction chamber merges into the exhaust channel of the outer chamber 11 and is finally connected to the same exhaust pump 19, which helps to simplify the device structure.

[0038] The number of the ejector pins 16 is 3 or more, preferably 3. Preferably, the 3 or more ejector pins 16 are evenly spaced and arranged on the same circumferential surface, so as to provide more balanced support for the wafer 13. The ejector pins 16 are adjacent to the base 14, and the ejector pins 16 are as close to the base 14 as possible without affecting the lifting and lowering of the ejector pins 16.

[0039] The support rods 17 are preferably more than three, and the three or more support rods 17 are preferably arranged adjacent to the annular side wall 121 of the inner reaction chamber. Similarly, without affecting the lifting and lowering of the support rods 17, the support rods 17 are as close to the annular side wall 121 of the inner reaction chamber as possible. For example, in some examples, Figure 2 As shown, there are four support rods 17 , and the four support rods 17 are arranged on the four top corners of the lifting plate 15 .

[0040] In some examples, such as Figure 2 As shown, the outer peripheral surface of the lifting plate 15 is provided with an inwardly recessed notch 151. For example, the notch 151 is provided on all four sides of the lifting plate 15. This not only helps to reduce the weight of the lifting plate 15 as much as possible, but also the notch 151 can be used as a channel for other things such as a gas pipeline, which is convenient for optimizing the equipment structure.

[0041] The support rod 17 and the top cover 122 can be connected in any suitable manner. In some examples, the two are movably connected, for example, the support rod 17 can be embedded in the groove of the top cover 122 one by one. In other examples, the two are connected by fasteners. For example, in a preferred example, the two are threadedly connected, that is, the support rod 17 has an external thread, and the bottom surface of the top cover 122 is provided with a screw hole with an internal thread, and the end of the support rod 17 connected to the lifting plate 15 is provided with a nut 181. When necessary, the vertical height between the top cover 122 and the wafer 13 can be adjusted by adjusting the thread fit of the two, which can better meet different process requirements.

[0042] Under the premise of ensuring the sealed connection between the lifting drive assembly 18 and the inner reaction chamber, the lifting drive assembly 18 can be of various structures, for example, a motor ball screw module lifting mechanism or a hydraulic lifting mechanism can be used. Figure 3 As shown, the lifting drive assembly 18 includes a base 182, a plurality of connecting rods 183, a plurality of elastic sealing tubes 184, and a lifting power unit 187 for providing lifting power. For example, there are more than three connecting rods 183, one end of the plurality of connecting rods 183 is connected to the lifting plate 15, and the other end extends downward to connect with the base 182 located outside the inner reaction chamber. The elastic sealing tube 184 is sleeved on the periphery of the connecting rod 183 in a one-to-one correspondence, and one end is connected to the bottom of the inner reaction chamber, and the other end is connected to the base 182 to ensure the sealing of the inner reaction chamber during the thin film deposition process. The lifting power unit 187 is connected to the bottom of the base 182, and under the drive of the lifting power unit 187, the lifting and lowering of the lifting drive assembly 18 is driven. In a further example, the elastic sealing tube 184 is, for example, a bellows, and the lifting power unit 187 is, for example, a cylinder and an electric cylinder. The use of the linear motion mechanism in this example helps to improve the lifting stability.

[0043] In some examples, the lifting drive assembly 18 further includes a guide shaft 185, one end of which is connected to the connecting rod 183, and the other end is connected to the lifting power unit 187. The guide shaft 185 can be a single one or a plurality of the same number as the connecting rod 183, each of which is connected to the connecting rod 183 through a connecting bracket 186. Providing the guide shaft 185 helps to improve the stability of the wafer 13 during the lifting process.

[0044] It should be noted that Figure 3 The components above the dashed line are located inside the device and are usually located in a vacuum environment, while the components below the dashed line are located outside the device and are located in an atmospheric environment.

[0045] Other structures not mentioned in the atomic layer deposition equipment of the present application may adopt existing technologies, which will not be elaborated here.

[0046] In summary, the utility model provides an atomic layer deposition device, which includes an outer chamber, an inner reaction chamber, a base for carrying wafers, a lifting plate, a plurality of ejectors, a plurality of support rods and a lifting drive assembly; a wafer entry and exit channel is provided on the outer chamber; the inner reaction chamber is arranged in the outer chamber, and includes an annular side wall and a top cover that can close the top of the annular side wall; the base is fixed in the inner reaction chamber; the lifting plate is located in the inner reaction chamber and is arranged around the periphery of the base; the plurality of ejectors are arranged outside the base, and one end is connected to the lifting plate, and the other end extends vertically upward to contact with the bottom surface of the wafer; the plurality of support rods are located outside the ejectors, one end of the support rods is connected to the lifting plate, and the other end is connected to the top cover, and the distance between at least two support rods is greater than the diameter of the wafer; the lifting drive assembly is connected to the lifting plate and extends downward to the outside of the inner reaction chamber, and the lifting drive assembly can lift the wafer to a height corresponding to the wafer entry and exit channel. The atomic layer deposition equipment provided by the utility model has an improved structural design, and only one set of transmission devices is needed to realize the transfer of wafers between the process position and the transfer position, which can greatly simplify the equipment structure and reduce the equipment use cost. At the same time, the ejector pin of the utility model is arranged on the periphery of the base, so there is no need to set a through hole for the ejector pin to pass through on the base, which helps to improve the heating uniformity of the wafer.

[0047] Therefore, the utility model effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0048] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.

Claims

1. An atomic layer deposition device, characterized in that: The atomic layer deposition equipment comprises an outer chamber, an inner reaction chamber, a base for carrying wafers, a lifting plate, a plurality of ejectors, a plurality of support rods and a lifting drive assembly; a wafer entry and exit channel is arranged on the outer chamber; the inner reaction chamber is arranged in the outer chamber, and comprises an annular side wall and a top cover which can close the top of the annular side wall; the base is fixed in the inner reaction chamber; the lifting plate is located in the inner reaction chamber and is arranged around the periphery of the base; the plurality of ejectors are arranged outside the base, and one end is connected to the lifting plate, and the other end extends vertically upward to contact with the bottom surface of the wafer; the plurality of support rods are located outside the ejectors, one end of the support rods is connected to the lifting plate, and the other end is connected to the top cover, and the distance between at least two support rods is greater than the diameter of the wafer; the lifting drive assembly is connected to the lifting plate and extends downward to the outside of the inner reaction chamber, and the lifting drive assembly can lift the wafer to a height corresponding to the wafer entry and exit channel.

2. The atomic layer deposition device according to claim 1, characterized in that: The inner reaction chamber and the outer chamber are fixed on the same bottom surface.

3. The atomic layer deposition device according to claim 1, characterized in that: More than three ejector pins are evenly spaced and arranged on the same circumferential surface and are adjacent to the base; more than three support rods are arranged adjacent to the annular side wall of the inner reaction chamber.

4. The atomic layer deposition device according to claim 1, characterized in that: The support rod and the top cover are threadedly connected.

5. The atomic layer deposition device according to claim 1, characterized in that: The outer peripheral surface of the lifting plate is provided with an inwardly recessed notch.

6. The atomic layer deposition device according to claim 1, characterized in that: The top cover is provided with an air inlet channel for conveying gas to the inner reaction chamber.

7. The atomic layer deposition device according to claim 1, characterized in that: The inner reaction chamber and the outer chamber are connected to the same exhaust pump.

8. The atomic layer deposition device according to any one of claims 1 to 7, characterized in that: The lifting drive assembly includes a base, multiple connecting rods, multiple elastic sealing tubes, and a lifting power unit; one end of the multiple connecting rods is connected to the lifting plate, and the other end extends downward to be connected to the base located outside the inner reaction chamber; the elastic sealing tubes are sleeved on the periphery of the connecting rods in a one-to-one correspondence, and one end is connected to the bottom of the inner reaction chamber, and the other end is connected to the base, and the lifting power unit is connected to the bottom of the base.

9. The atomic layer deposition device according to claim 8, characterized in that: The elastic sealing tube includes a bellows, and the lifting power unit includes a cylinder and an electric cylinder.

10. The atomic layer deposition device according to claim 8, characterized in that: The lifting drive assembly also includes a guide shaft, one end of which is connected to the connecting rod, and the other end of which is connected to the lifting power unit.

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