Power semiconductor device and anti-explosion structure thereof

Abstract

The utility model relates to the technical field of semiconductors, and discloses a power semiconductor device and an anti-explosion structure thereof, the power semiconductor device comprises a chip and a tube shell packaging the chip, the chip is provided with a cathode electrode, the cathode electrode is connected with a cathode of the tube shell, and the anti-explosion structure comprises a first explosion venting channel, a second explosion venting channel and an explosion venting cavity; the first explosion venting channel is arranged on the cathode electrode in a penetrating mode and extends in the axial direction. The second explosion venting channel is arranged on the tube shell cathode and extends in the axial direction, one end of the first explosion venting channel is correspondingly communicated with the second explosion venting channel, and the other end of the first explosion venting channel is arranged towards one side of the chip; the explosion venting cavity is formed in the tube shell cathode, the end, away from the first explosion venting channel, of the second explosion venting channel communicates with the explosion venting cavity, and the explosion venting cavity can guide explosion energy out of the tube shell. The explosion venting channels are formed in the cathode electrode and the tube shell cathode, internal explosion energy is guided to the explosion venting channels, the explosion energy is discharged through the explosion venting cavity, and therefore the anti-explosion capacity of the tube shell is improved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a power semiconductor device and an explosion-proof structure thereof. Background Art

[0002] As the core component of power transmission equipment, high-power semiconductor devices need to withstand high voltage and high current working environments in practical applications. The shell of existing crimped devices is usually composed of metal electrodes and ceramic shells. Due to the stress and brittleness of ceramic materials, when the chip fails due to a short circuit, a large amount of energy is released instantly, which may cause explosive damage to the inside of the device and the shell. On the one hand, the shell explosion will cause damage to the device body and cause failure of the series components. On the other hand, the residues produced by the shell explosion may also impact nearby equipment, interfere with the operation of the equipment, greatly reduce the reliability of the equipment operation, and even cause personal injury. Therefore, the explosion-proof design of the package of crimped semiconductor devices is crucial to improving the application reliability of the device. Although there is little research on device explosion-proof at home and abroad, research on technology to improve the explosion-proof performance of high-power semiconductor devices is inevitable. It is also a technical problem that must be solved for laboratory high-power IGCT devices to enter the market and expand their application areas. Utility Model Content

[0003] The purpose of the present application is to provide a power semiconductor device and an explosion-proof structure thereof to improve the explosion-proof performance of the power semiconductor device.

[0004] In order to achieve the above-mentioned object, the present application provides an explosion-proof structure of a power semiconductor device on one hand, the power semiconductor device includes a chip and a tube shell for packaging the chip, a cathode electrode is provided on the chip, and the cathode electrode is connected to the cathode of the tube shell, and the explosion-proof structure includes:

[0005] A first explosion relief channel is provided through the cathode electrode and extends in the axial direction;

[0006] A second explosion relief channel is provided on the cathode of the tube shell and extends in the axial direction, one end of the first explosion relief channel is correspondingly connected to the second explosion relief channel, and the other end is openly provided toward one side of the chip;

[0007] The explosion-relief cavity is arranged on the cathode of the tube shell, and the end of the second explosion-relief channel away from the first explosion-relief channel is connected with the explosion-relief cavity, and the explosion-relief cavity can conduct the explosion energy to the outside of the tube shell.

[0008] In some embodiments, the first explosion-relief channel includes a plurality of first explosion-relief holes arranged at intervals along the circumferential direction, and the second explosion-relief channel includes a plurality of second explosion-relief holes arranged at intervals along the circumferential direction. The number of the second explosion-relief holes and the first explosion-relief holes are the same and are connected one-to-one, and the ends of the plurality of second explosion-relief holes facing away from the first explosion-relief holes are connected to the explosion-relief cavity.

[0009] In some embodiments, a plurality of circles of comb bar assemblies are arranged at intervals in the radial direction on the surface of the chip, each group of comb bar assemblies includes a plurality of comb bars arranged at intervals in the circumferential direction, and a plurality of first explosion relief holes are arranged between any two adjacent comb bars.

[0010] In some embodiments, the number of the first explosion relief holes provided between any two adjacent comb strips ranges from 2 to 4.

[0011] In some embodiments, the number of first explosion relief channels and second explosion relief channels are both multiple groups and the number is the same. The multiple groups of first explosion relief channels and the multiple groups of second explosion relief channels are arranged radially at intervals. Each group of second explosion relief channels corresponds to and is connected to an explosion relief cavity, and the multiple groups of explosion relief cavities are connected to each other.

[0012] In some embodiments, the radial cross-sectional area of ​​the explosion relief cavity is ≤ 30% of the radial cross-sectional area of ​​the tube shell cathode.

[0013] In some embodiments, a sealing belt capable of being broken through by explosion energy is sandwiched between the outlet end of the first explosion relief channel and the inlet end of the second explosion relief channel.

[0014] In some embodiments, an explosion vent connected to the outside is opened at the center of the cathode of the tube shell, one end of the explosion vent is connected to the explosion vent cavity, and the other end is connected to the outside of the tube shell.

[0015] In some embodiments, the depth of the explosion vent ranges from 0.5 cm to 1 cm.

[0016] In some embodiments, the cathode electrode and the tube shell cathode are sealed and connected by brazing, and the explosion venting cavity is a vacuum cavity structure.

[0017] A second aspect of the present application provides a semiconductor device, which includes the explosion-proof structure as described above.

[0018] Through the above technical solution, the power semiconductor device and the explosion-proof structure thereof provided in the embodiment of the present application have the following beneficial effects:

[0019] The explosion-proof structure of the present application includes a first explosion-relief channel, a second explosion-relief channel and an explosion-relief cavity; the first explosion-relief channel is arranged on the cathode electrode and extends in the axial direction; the second explosion-relief channel is arranged on the cathode of the tube shell and extends in the axial direction, one end of the first explosion-relief channel is correspondingly connected to the second explosion-relief channel, and the other end is arranged to face the opening on one side of the chip, so that the explosion energy on the cathode electrode can be guided to the second explosion-relief channel via the first explosion-relief channel; the explosion-relief cavity is arranged on the cathode of the tube shell, and the end of the second explosion-relief channel away from the first explosion-relief channel is connected to the explosion-relief cavity, and the explosion-relief cavity can guide the explosion energy in the second explosion-relief channel to the outside of the tube shell. The present application arranges explosion-relief channels inside the cathode electrode and the cathode of the tube shell, and guides the explosion energy to the outside of the tube shell through the explosion-relief channels and the explosion-relief cavity, thereby eliminating the degree of explosion damage caused by failure of semiconductor devices.

[0020] Other features and advantages of the embodiments of the present application will be described in detail in the subsequent detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The accompanying drawings are used to provide a further understanding of the embodiments of the present application and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the embodiments of the present application, but do not constitute a limitation on the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without creative work. In the drawings:

[0022] Figure 1 A schematic diagram of a packaging structure of a semiconductor device in the prior art;

[0023] Figure 2 A schematic diagram of the side structure of the semiconductor device of the present application;

[0024] Figure 3 It is a schematic diagram of the radial cross-sectional structure of the tube shell cathode in the semiconductor device of the present application.

[0025] Description of Reference Numerals

[0026] 100, chip; 20, second explosion-relief channel; 101, cathode electrode; 21, second explosion-relief hole; 102, shell cathode; 30, explosion-relief cavity; 103, shell anode; 31, connecting channel; 104, anode electrode; 40, explosion-relief port; 10, first explosion-relief channel; 50, sealing tape; 11, first explosion-relief hole. DETAILED DESCRIPTION

[0027] The specific implementation of the present application is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described herein is only used to illustrate and explain the present application, and is not used to limit the present application. Figure 1 As shown, the shell material is ceramic, the sealing method is cold pressure welding, and the insulation method is gas insulation; in order to improve the reliability of the device, the shell sealing performance is required to be 1E-7Pa·m 3 / s; therefore, the explosion-proof ability of this package structure device is reflected in the strength of the ceramic shell and the cold-pressed welded joint itself; and because the device size is limited by the equipment application and the internal space of the package, the thickness of the ceramic shell is 5-6mm. When the device failure energy exceeds the load of the ceramic shell and the cold-pressed welded joint, it will not have explosion-proof ability. The existing crimped power device electrode is a whole block of thick copper structure, the thickness of the cathode side copper electrode is nearly 18-26cm, and the thickness of the anode side copper electrode is about 2-19cm; the overly thick copper block structure does not have explosion-proof design, and as the power of the semiconductor device increases, serious explosion will inevitably occur under certain working conditions.

[0028] In addition, since the DC capacitor of the UHV converter submodule has a capacitance of about 24mF, when the power device-capacitor direct short circuit limit condition occurs, the short circuit current exceeds 1000kA. As the energy increases further, the ceramic tube shell and metal electrodes of the device may be impacted and fail by the huge energy. In this case, the explosion-proof failure of the tube shell is very likely to cause a serious accident, which will bring hidden dangers to the safety of the system.

[0029] In view of this, if Figure 2 As shown, the present application provides an explosion-proof structure of a power semiconductor device, the power semiconductor device includes a chip 100 and a tube shell that encapsulates the chip 100, and the two surfaces of the chip 100 are respectively provided with a cathode electrode 101 and an anode electrode 104, wherein the cathode electrode 101 can be a cathode molybdenum sheet, and the anode electrode 104 can be an anode electrode, the cathode electrode 101 is connected to the tube shell cathode 102, and the anode electrode 104 is connected to the tube shell anode 103, and the explosion-proof structure includes a first explosion relief channel 10, a second explosion relief channel 20 and an explosion relief cavity 30. Figure 2 FIG. 1 is a schematic side view of a semiconductor device after packaging, wherein a cathode electrode 101 and an anode electrode 104 are respectively stacked on the upper and lower surfaces of a chip 100. Figure 2 The up-down direction in the figure is also the thickness direction of the cathode electrode 101, so the axial direction of the cathode electrode 101 is Figure 2 The radial direction is the left-right direction. In this embodiment, the first explosion relief channel 10 is arranged on the cathode electrode 101 and extends in the axial direction, that is, Figure 2 The second explosion relief channel 20 is provided on the tube shell cathode 102 and extends axially, that is, Figure 2In the up and down directions, one end of the first explosion-relief channel 10 is connected to the second explosion-relief channel 20, and the other end is open toward one side of the chip 100, so that the explosion energy on the cathode electrode 101 can be guided to the second explosion-relief channel 20 via the first explosion-relief channel 10; the explosion-relief cavity 30 is arranged on the cathode 102 of the tube shell, and the end of the second explosion-relief channel 20 away from the first explosion-relief channel 10 is connected to the explosion-relief cavity 30, and the explosion-relief cavity 30 can guide the explosion energy in the second explosion-relief channel 20 to the outside of the tube shell.

[0030] Since the prior art adopts a ceramic tube shell sealing structure, the explosion energy is sealed inside the tube shell by "blocking". As the level of power semiconductor devices increases, the failure energy increases with the square of the voltage used, and the explosion power will only become larger and larger, and it cannot play an effective anti-explosion role. The present application provides a first explosion relief channel 10 on the cathode electrode 101, and a second explosion relief channel 20 connected to the first explosion relief channel 10 is provided on the tube shell cathode 102, so that the internal explosion energy can be guided to the first explosion relief channel 10 and the second explosion relief channel 20, and the explosion energy is unloaded to the outside through the explosion relief cavity 30, thereby improving the explosion resistance of the semiconductor device tube shell. In other words, the technical solution of the present application releases the explosion energy by adopting a "discharge" method, which greatly reduces the negative impact caused by the explosion of the semiconductor device, and solves the problem that the existing packaging structure does not have anti-explosion performance from the perspective of packaging.

[0031] In some embodiments, the first explosion relief channel 10 includes a plurality of first explosion relief holes 11 spaced apart along the circumferential direction, and the second explosion relief channel 20 includes a plurality of second explosion relief holes 21 spaced apart along the circumferential direction, and each first explosion relief hole 11 and each second explosion relief hole 21 are spaced apart along the circumferential direction. Figure 2 The second explosion relief holes 21 extend in the up-down direction, the number of the second explosion relief holes 21 and the first explosion relief holes 11 are the same and are connected one-to-one, and the ends of the plurality of second explosion relief holes 21 away from the first explosion relief holes 11 are all connected to the explosion relief cavity 30.

[0032] In this embodiment, the plurality of first explosion-relief holes 11 in the first explosion-relief channel 10 are arranged at intervals along the circumference to form a discontinuous annular structure, and the radial cross-section of each first explosion-relief hole 11 is an arc-shaped structure. The plurality of second explosion-relief holes 21 in the second explosion-relief channel 20 are arranged at intervals along the circumference to form a discontinuous annular structure, and each second explosion-relief hole 21 in each second explosion-relief channel 20 is connected to each first explosion-relief hole 11 in the first explosion-relief channel 10 in a one-to-one correspondence, thereby achieving the purpose of guiding the explosion energy in each first explosion-relief hole 11 to the corresponding second explosion-relief hole 21. Since the outlet end of each second explosion-relief hole 21 is connected to the explosion-relief cavity 30, the explosion energy in the second explosion-relief hole 21 can all enter the explosion-relief cavity 30, thereby achieving the purpose of discharging the explosion energy to the outside. In addition, the number, diameter and shape of the first explosion-relief hole 11 and the second explosion-relief hole 21 are the same, so as to achieve a better effect of draining the explosion energy.

[0033] In some embodiments, the surface of the chip 100 is provided with a plurality of circles of comb bar assemblies spaced apart in the radial direction, each group of comb bar assemblies includes a plurality of comb bars spaced apart in the circumferential direction, and a plurality of first explosion relief holes 11 are correspondingly provided between any two adjacent comb bars.

[0034] In this embodiment, the number of first explosion relief holes 11 arranged between any two adjacent comb strips is equal. Preferably, 2 to 4 first explosion relief holes 11 are arranged between each interval to ensure that the pressure bearing of the chip 100 is not affected.

[0035] In some embodiments, the number of first explosion relief channels 10 and second explosion relief channels 20 are both multiple groups and the number is the same. The multiple groups of first explosion relief channels 10 and the multiple groups of second explosion relief channels 20 are arranged radially at intervals. Each group of second explosion relief channels 20 is connected to a corresponding explosion relief cavity 30, and the multiple groups of explosion relief cavities 30 are connected to each other.

[0036] like Figure 3 As shown, for each group of second explosion relief channels 20, there is an explosion relief cavity 30 correspondingly connected to the plurality of second explosion relief holes 21, but in order to achieve better guidance of the explosion energy, the plurality of explosion relief cavities 30 are connected through the connecting channel 31, so that each explosion cavity is connected to each other. Since the plurality of second explosion relief channels 20 form a multi-ring structure, the plurality of explosion cavities are also arranged in a ring shape, and any two adjacent ring explosion cavities are connected through the plurality of connecting channels 31, so that the explosion energy of all the explosion cavities can be concentratedly guided and vented.

[0037] In some embodiments, the radial cross-sectional area of ​​the explosion-relief cavity 30 is ≤ 30% of the radial cross-sectional area of ​​the tube shell cathode 102. In this embodiment, the radial cross-section of the explosion-relief cavity 30 is an annular structure, and it is verified through experiments that if the radial cross-sectional area of ​​the explosion-relief cavity 30 is too large, due to the limited area of ​​the tube shell cathode 102, it will not be possible to achieve a one-to-one correspondence between the explosion-relief cavity 30 and each group of second explosion-relief channels 20, so it is necessary to make the radial cross-sectional area of ​​each explosion-relief cavity 30 less than 30% of the radial cross-sectional area of ​​the tube shell cathode 102 to achieve the best explosion-relief effect.

[0038] In some embodiments, a sealing tape 50 capable of being broken through by the explosion energy is sandwiched between the outlet end of the first explosion relief channel 10 and the inlet end of the second explosion relief channel 20. The sealing tape 50 is a sealing copper tape, and a sealed negative pressure cavity is formed between the sealing tape 50 and the tube shell, which is conducive to guiding the explosion energy to escape, and can also ensure that the amount of gas inside the semiconductor device remains unchanged while not increasing the expansion energy of the gas after the guarantee. When an explosion occurs, the explosion energy rushing out of the first explosion relief channel 10 can break through the sealing tape 50 between the two explosion relief channels, so that the explosion energy in the first explosion relief channel 10 enters the second explosion relief channel 20. It should be noted that in this embodiment, the presence of the sealing tape 50 can buffer the explosion energy in the first explosion relief channel 10, preventing the energy from being too large and directly impacting the second explosion relief channel 20, causing damage to the tube shell cathode 102.

[0039] In some embodiments, an explosion vent 40 connected to the outside is provided at the center of the tube shell cathode 102, one end of the explosion vent 40 is connected to the explosion vent cavity 30, and the other end is connected to the outside of the tube shell. In this embodiment, since the explosion vent 40 is located at the center of the tube shell cathode 102, the explosion vent 40 is also located at the center of the multi-ring structure composed of multiple explosion vent cavities 30, one end of the explosion vent 40 is connected to the explosion vent cavity 30 located in the innermost ring, and the explosion energy of the explosion vent cavity 30 in the outermost ring is guided to the explosion vent 40 in the inner center through the rings, and the explosion energy is discharged from the explosion vent 40. In addition, since the explosion vent 40 located in the center is located in the center of the tube shell cathode 102, it also has an assembly positioning function to facilitate the center positioning of the tube shell cathode 102 during the packaging process.

[0040] In some embodiments, the depth of the explosion vent 40 ranges from 0.5 cm to 1 cm. It is understandable that the depth of the explosion vent 40 cannot be too high or too low. An explosion vent 40 that is too deep will not be conducive to the smooth discharge of the explosion energy, and an explosion vent 40 that is too low will have a small buffering effect on the explosion energy and easily cause an impact on the tube shell cathode 102 where the explosion vent 40 is located. In a preferred embodiment, the depth of the explosion vent 40 is less than or equal to 1 cm to ensure that the explosion energy can be damaged and discharged; through multiple experiments, it is found that when the depth of the explosion vent 40 is between 0.5 and 1 cm, the discharge effect of the explosion energy is better.

[0041] In some embodiments, the cathode electrode 101 and the tube shell cathode 102 are sealed and connected by brazing with a thin copper sheet, and vacuum treatment is performed to form a sealed, vacuum structure explosion venting cavity 30. In this embodiment, by designing the explosion venting cavity 30 inside the tube shell cathode 102 into a vacuum cavity structure, on the one hand, the internal gas capacity of the original packaging structure of the semiconductor device is not changed; on the other hand, after the explosion energy destroys the thin copper sealing layer, the negative pressure environment of the explosion venting cavity 30 is more conducive to the discharge of the explosion energy, and is transmitted to the explosion venting port 40 to be discharged from the outside of the tube shell, thereby improving the explosion resistance of the semiconductor device.

[0042] The second aspect of the present application provides a semiconductor device, which includes the explosion-proof structure as described above. After the semiconductor device of the present application has the above explosion-proof structure, it can not only improve the explosion-proof ability of the semiconductor device shell, but also can maintain the compression packaging structure, gas insulation and shell cold pressure welding sealing form of the semiconductor device. Therefore, the use of the explosion-proof structure of the present application will not change the application scenario and packaging and testing process of the semiconductor device.

[0043] In the description of the present application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present application, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0044] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0045] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0046] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. An explosion-proof structure of a power semiconductor device, characterized in that: The power semiconductor device comprises a chip (100) and a tube shell for packaging the chip (100); a cathode electrode (101) connected to a cathode (102) of the tube shell is provided on the chip (100); and the explosion-proof structure comprises: A first explosion relief channel (10) is provided through the cathode electrode (101) and extends in the axial direction; A second explosion relief channel (20) is provided on the tube shell cathode (102) and extends in the axial direction, one end of the first explosion relief channel (10) is arranged toward the chip (100), and the other end is correspondingly connected to the second explosion relief channel (20); An explosion relief cavity (30) is provided on the tube shell cathode (102); an end of the second explosion relief channel (20) facing away from the first explosion relief channel (10) is connected to the explosion relief cavity (30); and the explosion relief cavity (30) is used to conduct explosion energy to the outside of the tube shell.

2. The explosion-proof structure of a power semiconductor device according to claim 1, characterized in that: The first explosion relief channel (10) includes a plurality of first explosion relief holes (11) arranged at intervals along the circumferential direction, and the second explosion relief channel (20) includes a plurality of second explosion relief holes (21) arranged at intervals along the circumferential direction, the second explosion relief holes (21) and the first explosion relief holes (11) are the same in number and are connected in a one-to-one correspondence, and the ends of the plurality of second explosion relief holes (21) facing away from the first explosion relief holes (11) are all connected to the explosion relief cavity (30).

3. The explosion-proof structure of a power semiconductor device according to claim 2, characterized in that: The surface of the chip (100) is provided with a plurality of circles of comb bar assemblies arranged at intervals in the radial direction, each group of the comb bar assemblies comprises a plurality of comb bars arranged at intervals in the circumferential direction, and a plurality of the first explosion relief holes (11) are provided between any two adjacent comb bars.

4. The explosion-proof structure of a power semiconductor device according to claim 3, characterized in that: The number of the first explosion relief holes (11) arranged between any two adjacent comb strips is in the range of 2 to 4.

5. The explosion-proof structure of a power semiconductor device according to claim 1, characterized in that: The number of the first explosion relief channels (10) and the number of the second explosion relief channels (20) are both multiple groups and the number is the same. The multiple groups of the first explosion relief channels (10) and the multiple groups of the second explosion relief channels (20) are arranged radially at intervals. Each group of the second explosion relief channels (20) is correspondingly connected to an explosion relief cavity (30), and the multiple groups of the explosion relief cavities (30) are connected to each other.

6. The explosion-proof structure of a power semiconductor device according to claim 1, characterized in that: The radial cross-sectional area of ​​the explosion relief cavity (30) is not greater than 30% of the radial cross-sectional area of ​​the tube shell cathode (102).

7. The explosion-proof structure of a power semiconductor device according to any one of claims 1 to 6, characterized in that: A sealing belt (50) is also sandwiched between the outlet end of the first explosion relief channel (10) and the inlet end of the second explosion relief channel (20).

8. The explosion-proof structure of a power semiconductor device according to any one of claims 1 to 6, characterized in that: An explosion relief opening (40) communicating with the outside is provided at the center of the tube shell cathode (102); one end of the explosion relief opening (40) is communicated with the explosion relief cavity (30), and the other end is communicated with the outside of the tube shell.

9. The explosion-proof structure of a power semiconductor device according to claim 8, characterized in that: The explosion vent (40) has a depth ranging from 0.5 cm to 1 cm.

10. The explosion-proof structure of a power semiconductor device according to any one of claims 1 to 6, characterized in that: The cathode electrode (101) and the tube shell cathode (102) are sealed and connected via brazing, and the explosion relief cavity (30) is a vacuum cavity structure.

11. A power semiconductor device, characterized in that: The power semiconductor device comprises the explosion-proof structure according to any one of claims 1 to 10.

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