Semiconductor laser

Abstract

The utility model discloses a semiconductor laser. The semiconductor laser comprises a tube shell which comprises a base and a wall seat, the base is provided with a mounting surface, and the wall seat is arranged on the mounting surface of the base and is provided with a plurality of parallel step surfaces perpendicular to the mounting surface; the plurality of collimation light path groups are arranged on the mounting surface, correspond to the step surfaces in sequence and are used for emitting a plurality of collimation light beams along a first direction parallel to the mounting surface; and the multi-path reflecting mirror group is sequentially arranged on each step surface and is used for reflecting the multi-path collimated light beams to a plane higher than the mounting surface and transmitting the multi-path collimated light beams along a second direction parallel to the mounting surface, and the second direction is different from the first direction. Through the mode, the semiconductor laser provided by the utility model can uniformly dissipate heat of the laser chip in the semiconductor laser, the cooling water channel of the base is easy to process, the light path shaping and adjusting difficulty is small, and the size of the semiconductor laser can be effectively reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor lasers, and in particular to a semiconductor laser. Background Art

[0002] At present, most multi-single-tube semiconductor lasers use a stepped structure when combining beams, and the position where the semiconductor laser chip is placed on the bottom plate is processed into steps with a certain spacing. The main disadvantages of this solution are: 1. The processing accuracy of the parallelism of the bottom plate steps and the step spacing is high; 2. Due to the existence of the steps, the cooling water channel needs to be tilted, which increases the difficulty of bottom plate water channel processing; 3. The step height difference causes uneven heat dissipation of the semiconductor laser chip; 4. In order to increase the number of beam combining chips, the step spacing must be compressed, thereby increasing the difficulty of optical assembly and adjustment and reducing the product yield; 5. The optical path is on the same plane, and the overall volume of the laser is large.

[0003] In response to the above problems, some inventions have replaced the steps by tilting the optical path, separating the optical path of a single-tube semiconductor laser chip, and reducing the adverse effects of the steps. However, the above solution is seriously affected by the deformation of the optical path tilt angle, especially as the number of chips increases, the difficulty of optical path shaping increases significantly, and the laser volume cannot be reduced. Utility Model Content

[0004] The present application mainly provides a semiconductor laser to solve the problems of uneven heat dissipation, difficulty in optical path shaping and adjustment, and large size in existing semiconductor lasers.

[0005] In order to solve the above technical problems, a technical solution adopted by the present application is: to provide a semiconductor laser. The semiconductor laser comprises: a tube shell, including a base and a wall seat, the base having a mounting surface, the wall seat being arranged on the mounting surface of the base and provided with a plurality of parallel step surfaces perpendicular to the mounting surface; a multi-path collimated light path group, all arranged on the mounting surface and arranged in sequence corresponding to each of the step surfaces, for emitting a plurality of collimated light beams along a first direction parallel to the mounting surface; a multi-path reflector group, arranged in sequence on each of the step surfaces, for respectively reflecting the plurality of collimated light beams to a plane higher than the mounting surface and transmitting them along a second direction parallel to the mounting surface, the second direction being different from the first direction.

[0006] In some embodiments, the base includes a bottom wall provided with the mounting surface, and the wall seat is a side wall connected to one side of the bottom wall; or

[0007] The wall seat is connected to the non-edge area of ​​the bottom wall.

[0008] In some embodiments, the base includes a bottom wall having the mounting surface, and the wall seat is a partition connected to the bottom wall, thereby dividing the mounting surface of the bottom wall into two mounting areas, and both sides of the wall seat have multiple parallel step surfaces, and the multi-path collimating light path group and the corresponding multi-path reflector group are symmetrically arranged on both sides of the wall seat.

[0009] In some embodiments, the semiconductor laser further includes a secondary light path reflector and a beam combining prism, wherein the beam combining prism is arranged on an outgoing light path of one path of the multi-path reflector group, and the secondary light path reflector is arranged on an outgoing light path of another path of the multi-path reflector group, and the secondary light path reflector is used to reflect the corresponding collimated light beam to an incident surface of the beam combining prism, so that the two collimated light beams are combined through the beam combining prism.

[0010] In some embodiments, the semiconductor laser further comprises a focusing lens group, wherein the focusing lens group is arranged on the optical path of the collimated light beam transmitted by the multi-path reflector group;

[0011] The emission direction of the focusing lens assembly is the same as the second direction; or

[0012] The semiconductor laser also includes a main light path reflector group, which is arranged on the light path between the multi-path reflector group and the focusing mirror group, and is used to adjust the transmission direction of the light path of the collimated light beam after being reflected by the multi-path reflector group, wherein the emission direction of the focusing mirror group is parallel to the first direction, or the focusing mirror group is located above the multi-path collimated light path group and the emission direction of the focusing mirror group is opposite to the second direction.

[0013] In some embodiments, each of the multi-path collimating light path group and the multi-path reflecting mirror group corresponds to a group of the focusing mirror group, or each of the multi-path collimating light path group and the multi-path reflecting mirror group corresponds to the same group of the focusing mirror group.

[0014] In some embodiments, the tube shell also includes an upper cover connected to the base, the main light path reflector group and the focusing lens group are both arranged on the surface of the upper cover facing the mounting surface of the base, and the focusing lens group is also located above the collimating light path group.

[0015] In some embodiments, the reflector group includes a bottom reflector and a beam combining reflector spaced apart along the step surface, and the collimating optical path group includes a laser chip, a fast axis collimator and a slow axis collimator, wherein the laser chip, the fast axis collimator and the slow axis collimator are arranged on the mounting surface along the first direction, and the laser output by the laser chip passes through the fast axis collimator, the slow axis collimator, the bottom reflector and the beam combining reflector in sequence; or

[0016] The laser chip and the fast-axis collimator are arranged on the mounting surface along the first direction, the slow-axis collimator is arranged on the step surface and is located between the bottom reflector and the beam-combining reflector, and the laser output by the laser chip passes through the fast-axis collimator, the bottom reflector, the slow-axis collimator and the beam-combining reflector in sequence.

[0017] In some embodiments, the beam combining reflectors are located at the same height, and because they are disposed on different step surfaces, the reflected collimated light beams are staggered and located on the same plane.

[0018] In some embodiments, the mounting surface is a plane, the first direction is perpendicular to the step surface, and the second direction is perpendicular to the first direction.

[0019] The beneficial effects of the present application are as follows: Different from the prior art, the present application discloses a semiconductor laser. By setting a wall seat on the base, the wall seat is used to arrange a reflector group, so that the collimated light beam transmitted along the mounting surface is turned to be transmitted in a direction parallel to the step surface, and the three-dimensional space above the mounting surface is used to arrange the reflector group and even part of the optical devices in the collimated light path group, and the three-dimensional space above the mounting surface is used to accommodate the light path, so that the overall structure of the semiconductor laser is more compact, and its spatial size and volume are reduced; multiple collimated light path groups are installed on the same mounting surface, and the bottom wall of the base can be set as a flat plate with uniform thickness, which can reduce the processing accuracy requirements for the bottom wall and is also conducive to the setting The cooling water channel in the bottom wall also dissipates heat for each laser chip more evenly; further, each reflector group is arranged on different step surfaces on the wall seat, so as to utilize the misalignment difference formed between the step surfaces to cause the reflected collimated light beam to be misaligned, thereby preventing the front reflector group from blocking the collimated light beam reflected by the rear reflector group, and utilizing the assembly relationship between the reflector group and the step surface, each reflected collimated light beam can be emitted along the second direction, which can greatly reduce the risk of tilt and deformation of each collimated light beam during transmission, ensure the parallelism between each collimated light beam, and reduce the difficulty of adjusting the light beam. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work, among which:

[0021] Figure 1 is a schematic structural diagram of an embodiment of a semiconductor laser provided by the present application;

[0022] Figure 2 yes Figure 1 A schematic diagram of the local structure of the semiconductor laser shown;

[0023] Figure 3 yes Figure 1 A schematic diagram of the optical path structure of another embodiment of the semiconductor laser shown;

[0024] Figure 4 is a schematic structural diagram of a second embodiment of a semiconductor laser provided by the present application;

[0025] Figure 5 It is a schematic structural diagram of three embodiments of semiconductor lasers provided by the present application;

[0026] Figure 6 It is a schematic structural diagram of four embodiments of semiconductor lasers provided in this application. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0028] The terms "first", "second", "third" in the embodiments of the present application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second", "third" can expressly or implicitly include at least one of the features. In the description of the present application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

[0029] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0030] The present application provides a semiconductor laser 100, referring to Figures 1 to 3 , Figure 1 is a schematic structural diagram of an embodiment of a semiconductor laser provided by the present application, Figure 2 yes Figure 1 The local structure diagram of the semiconductor laser is shown in FIG. Figure 3 yes Figure 1 A schematic diagram of the optical path structure of another embodiment of a semiconductor laser is shown.

[0031] The semiconductor laser 100 includes a tube shell 10, a multi-path collimating optical path group 20, a multi-path reflecting mirror group 30, a focusing mirror group 40 and an output optical fiber 50. The multi-path collimating optical path group 20, the multi-path reflecting mirror group 30 and the focusing mirror group 40 are all arranged in the tube shell 10. The focusing mirror group 40 can compress the laser beam and couple it into the output optical fiber 50 to form a laser transmitted in the optical fiber.

[0032] The tube shell 10 includes a base 12 and a wall base 14. The base 12 and the wall base 14 can be an integral structure or separate entities connected. The base 12 has a mounting surface 120. The wall base 14 is arranged on the mounting surface 120 of the base 12 and is provided with a plurality of parallel step surfaces 140 perpendicular to the mounting surface 120. The multi-path collimated light path group 20 is arranged on the mounting surface 120 and is arranged in sequence corresponding to each step surface 140, and is used to emit a multi-path collimated light beam along a first direction A parallel to the mounting surface 120; the multi-path reflector group 30 is arranged in sequence on each step surface 140, and is used to respectively reflect the multi-path collimated light beam to a plane higher than the mounting surface 120 and transmit it along a second direction B parallel to the mounting surface 120, and the second direction B is different from the first direction A.

[0033] The base 12 can be made of copper, aluminum or other heat dissipation matrix, which can improve the heat dissipation performance of the laser chip. The wall base 14 can be made of lightweight aluminum or plastic, etc., to facilitate the lightweight of the semiconductor laser 100.

[0034] The mounting surface 120 is a plane, and the collimated optical path group 20 includes a laser chip 21. The laser chips 21 in the multi-path collimated optical path group 20 are arranged side by side on the mounting surface 120 of the base 12. By standardizing the distribution of the laser chips 21, the utilization efficiency of the mounting surface 120 can be improved and the size and volume of the semiconductor laser 100 can be reduced.

[0035] In other embodiments, the laser chips 21 may also be arranged on the mounting surface 120 in a non-side-by-side manner, for example, there is a misalignment between the laser chips 21 in the arrangement direction.

[0036] Since the mounting surface 120 is a plane, the bottom wall 121 of the base 12 can be set as a flat plate with uniform thickness, which can reduce the processing accuracy requirements for the bottom wall 121 and is also conducive to setting a cooling water channel in the bottom wall 121, so that the heat dissipation of each laser chip 21 is more uniform.

[0037] The multiple collimating optical path groups 20 are all arranged on the mounting surface 120 . It can be understood that the components constituting the collimating optical path group 20 are at least partially arranged on the mounting surface 120 , or the components constituting the collimating optical path group 20 are all arranged on the mounting surface 120 .

[0038] In this embodiment, the collimating optical path 20 includes a laser chip 21, a fast axis collimating lens 22 and a slow axis collimating lens 23, wherein at least the laser chip 21 and the fast axis collimating lens 22 are directly disposed on the mounting surface 120, and the slow axis collimating lens 23 can be disposed on the mounting surface 120 or the step surface 140.

[0039] When the slow-axis collimator 23 is disposed on the corresponding step surface 140, the collimated light beam can be deflected by the reflector group 30 and then passes through the slow-axis collimator 23, so that the wall seat 14 can be used to utilize the space above the mounting surface 120 of the base 12, and the slow-axis collimator 23 and some components in the reflector group 30 are spatially separated from the mounting surface 120 where the laser chip 21 is located to form a three-dimensional distribution, which can greatly utilize the upper space above the mounting surface 120, thereby effectively reducing the volume of the semiconductor laser 100.

[0040] The light beam emitted by the laser chip 21 generally exhibits an elliptical divergence characteristic, wherein one direction is called the "slow axis" with a relatively small divergence angle (eg, about 10°), and the other direction is called the "fast axis" with a larger divergence angle (possibly up to 40°).

[0041] The fast-axis collimator 22 and the slow-axis collimator 23 are key components for beam shaping and control, and complement each other. The fast-axis collimator 22 collimates the light beam in the fast-axis direction, converges or adjusts the light diverging in the fast-axis direction into a parallel light beam, reduces the fast-axis divergence angle, and thus improves the concentration and utilization of light energy; the slow-axis collimator 23 collimates the light beam in the slow-axis direction, converges or adjusts the light diverging in the slow-axis direction into a parallel light beam, reduces the slow-axis divergence angle, and thus improves the concentration and utilization of light energy; the fast-axis collimator 22 and the slow-axis collimator 23 are used in combination, and the two work together to achieve good collimation of the light beam in two dimensions, which is crucial for subsequent operations such as beam transmission, focusing, or coupling to optical fibers. This can ensure beam quality, reduce light loss, and improve the performance and efficiency of the entire semiconductor laser 100.

[0042] The wall seat 14 is a stepped structure, and a plurality of parallel step surfaces 140 are formed on its side wall. Each reflector group 30 is arranged in one-to-one correspondence with each collimating optical path group 20, each laser chip 21 and fast axis collimating mirror 22 are arranged on the mounting surface 120, and each reflector group 30 is arranged on a different step surface 140. The step surfaces 140 on the same side of the wall seat 14 make the reflector groups 30 arranged thereon staggered, so as to avoid the reflector group 30 in front blocking the reflector group 30 in the back, so that the multi-path collimated light beams emitted by each reflector group 30 can be transmitted along the second direction B in the plane at the same height.

[0043] The second direction B is different from the first direction A. For example, the second direction B may be perpendicular to the first direction A, or the angle between the second direction B and the first direction A may be in a range of 80 degrees to 100 degrees.

[0044] The second direction B is parallel to the step surface 140 . In this embodiment, each step surface 140 is perpendicular to the first direction A, and the second direction B is perpendicular to the first direction A, so that each emitted collimated light beam is transmitted along the second direction B in a plane parallel to the mounting surface 120 .

[0045] Optionally, each step surface 140 is not perpendicular to the first direction A but forms an angle with the first direction A, so that each emitted collimated light beam is transmitted along the second direction B in a plane parallel to the mounting surface 120 .

[0046] The misalignment formed between the step surfaces 140 makes it unnecessary to adjust the tilt angle of each emitted collimated light beam. The second direction B is parallel to the step surface 140, which reduces the risk of tilt deformation during transmission and the difficulty of subsequent adjustment of the light beam.

[0047] In this embodiment, Figure 2 or Figure 3 As shown, the reflector assembly 30 includes a bottom reflector 31 and a beam combining reflector 32 spaced apart along the step surface 140 , wherein the bottom reflector 31 may also be disposed on the mounting surface 120 , and the slow axis collimator 23 may be disposed between the bottom reflector 31 and the beam combining reflector 32 .

[0048] The bottom reflector 31 is fixedly mounted on the mounting surface 120 of the base 12 and is disposed close to the corresponding step surface 140 on the wall base 14 .

[0049] Optionally, the bottom reflector 31 is fixedly disposed on the corresponding step surface 140 and is disposed close to the mounting surface 120 ; or, two sides of the bottom reflector 31 are respectively fixed to the mounting surface 120 and the corresponding step surface 140 .

[0050] Each beam combining reflector 32 is located at the same height, and because it is disposed on different step surfaces 140 , the reflected collimated light beams are staggered and located on the same plane, which is parallel to the mounting surface 120 .

[0051] The bottom reflector 31 and the beam combining reflector 32 are distributed on the step surface 140 in a direction perpendicular to the mounting surface 120. The bottom reflector 31 deflects the collimated light beam along the first direction A to be transmitted in the vertical direction, so as to utilize the upper space of the mounting surface 120 to arrange optical devices to achieve a three-dimensional arrangement, thereby increasing the compactness of the semiconductor laser 100 and reducing the size and volume of the semiconductor laser 100.

[0052] In this embodiment, Figure 1 As shown, the laser output by the laser chip 21 is transmitted along a first direction A parallel to the mounting surface 120, and then transmitted along a vertical direction after passing through the bottom reflector 31, the vertical direction being perpendicular to the mounting surface 120, and then transmitted along a second direction B after passing through the beam combining reflector 32, the second direction B being parallel to the mounting surface 120 and perpendicular to the first direction A.

[0053] See also Figures 1 to 3 , the laser chip 21 and the fast axis collimator 22 are arranged on the mounting surface 120 along the first direction A; Figure 3 As shown, the slow axis collimator 23 is disposed on the step surface 140 and located between the bottom reflector 31 and the beam combining reflector 32 , and the laser output by the laser chip 21 passes through the fast axis collimator 22 , the bottom reflector 31 , the slow axis collimator 23 and the beam combining reflector 32 in sequence.

[0054] The optical path between the slow axis collimator 23 and the laser chip 21 is the sum of the optical path between the laser chip 21 and the bottom reflector 31 and the optical path between the slow axis collimator 23 and the bottom reflector 31. Under the condition that the spatial distance required for the slow axis collimator 23 to focus is met, that is, a certain optical path is met between the slow axis collimator 23 and the laser chip 21, the horizontal distance and spatial distance between the slow axis collimator 23 and the laser chip 21 are made smaller, which can effectively reduce the size of the required base 12 and make the size of the semiconductor laser 100 smaller; and, since the base 12 is made of a metal material that is easy to conduct heat, the small size of the base 12 can reduce the weight of the semiconductor laser 100 as a whole.

[0055] Alternatively, if Figure 1 As shown, the laser chip 21, the fast axis collimator 22 and the slow axis collimator 23 are arranged on the mounting surface 120 along the first direction A, and the laser output by the laser chip 21 passes through the fast axis collimator 22, the slow axis collimator 23, the bottom reflector 31 and the beam combining reflector 32 in sequence.

[0056] The multi-path reflector groups 30 are all arranged in a three-dimensional manner, which can help reduce the size and volume of the semiconductor laser 100, and also help to reduce its weight and improve its heat dissipation performance.

[0057] The semiconductor laser 100 provided by the present application is provided with a wall seat 14 on the base 12, and the wall seat 14 is used to arrange the reflector group 30, so that the collimated light beam transmitted along the mounting surface 120 is turned to be transmitted in a direction parallel to the step surface 140, and the three-dimensional space above the mounting surface 120 is used to arrange the reflector group 30 and even part of the optical devices in the collimating light path group 20, and the three-dimensional space above the mounting surface 120 is used to accommodate the light path, so that the overall structure of the semiconductor laser 100 is more compact, and its space size and volume are reduced; further Each reflector group 30 is arranged on a different step surface 140 on the wall seat 14, so as to utilize the misalignment difference formed between the step surfaces 140 to cause the reflected collimated light beams to be misaligned, thereby preventing the front reflector group 30 from blocking the collimated light beam reflected by the rear reflector group 30, and utilizing the assembly relationship between the reflector group 30 and the step surface 140, so that each reflected collimated light beam can be emitted along the second direction B, which can greatly reduce the risk of tilt and deformation of each collimated light beam during transmission, ensure the parallelism between each collimated light beam, and reduce the difficulty of adjusting the light beam.

[0058] In some embodiments, Figure 2 As shown, the base 12 includes a bottom wall 121 having a mounting surface 120 and a side wall 122 connected around the bottom wall 121, wherein the wall seat 14 may be a side wall connected to one side of the bottom wall 121. By setting the side wall 122 of the base 12 into a step structure to form a wall seat 14 having a plurality of parallel step surfaces 140, the integration of the tube shell 10 can be further improved, the space volume occupied by the wall seat 14 can be reduced, the compactness of the structure of the semiconductor sensor 100 can be further improved, and the volume of the semiconductor sensor 100 can be reduced.

[0059] Alternatively, if Figure 1 As shown, the wall seat 14 is connected to the non-edge area of ​​the bottom wall 121 and is isolated from the side wall 122 of the base 12. For example, the wall seat 14 is detachably connected to the bottom wall 121, and the wall seat 14 is isolated from the side wall 122 for easy disassembly.

[0060] Optionally, the base 12 includes only the bottom wall 121 , and the wall seat 14 may be connected to a non-edge area of ​​the bottom wall 121 , or the wall seat 14 may be connected to an edge of the bottom wall 121 .

[0061] Alternatively, if Figure 1As shown, the focusing lens group 40 is arranged on the optical path of the collimated light beam transmitted by the multi-path reflector group 30, the optical axis of the focusing lens group 40 is parallel to the second direction B, that is, the emission direction of the focusing lens group 40 is parallel to the second direction B, and the output optical fiber 50 emits light along the second direction B.

[0062] See also Figure 3 The semiconductor laser 100 may further include a main optical path reflector group 60, which is disposed on the optical path between the multi-path reflector group 30 and the focusing mirror group 40, and is used to adjust the transmission direction of the optical path of the collimated light beam after being reflected by the multi-path reflector group 30, wherein the emission direction of the focusing mirror group 40 is parallel to the first direction A, or the focusing mirror group 40 is located above the multi-path collimating optical path group 20 and the emission direction of the focusing mirror group 40 is opposite to the second direction A.

[0063] The tube shell 10 also includes an upper cover (not shown) connected to the base 12. The upper cover is at least connected to the base 12 to form a closed shell. The collimating optical path group 20, the reflector group 30, the focusing lens group 40 and the main optical path reflector group 60 are all arranged in the shell. One end of the output optical fiber 50 is located in the shell and behind the focusing lens group 40. The focusing lens group 40 can compress the laser beam and couple it into the output optical fiber 50 to form a laser transmitted in the optical fiber.

[0064] The main light path reflector set 60 includes at least one reflector, and is used to change the transmission direction of the light path, and can reflect the light path to any side of the tube shell 10 , so that light can be emitted from any side of the semiconductor laser 100 .

[0065] Optionally, the laser chip 21 is arranged on the mounting surface 120 of the base 12, the main optical path reflector group 60, the focusing lens group 40 and the output optical fiber 50 are arranged on the surface of the upper cover facing the mounting surface 120, and the focusing lens group 40 is also located above the collimating optical path group 20 to fully utilize the three-dimensional space on the mounting surface 120. The main optical path reflector group 60 can reflect the light path to the surface of the upper cover in the tube shell 10, so as to further fully utilize the internal space of the tube shell 10, further increase the compactness of the semiconductor laser 100, and reduce the overall volume. Among them, the optical axis of the focusing lens group 40 can be opposite to the second direction B, or opposite to the first direction A, so that the output optical fiber 50 can emit light from the back or side of the semiconductor laser 100.

[0066] See also Figure 4 , Figure 41 is a schematic diagram of the structure of the second embodiment of the semiconductor laser provided by the present application. In other embodiments, the base 12 includes a bottom wall 121 provided with a mounting surface 120, the wall seat 14 is a partition connected to the bottom wall 121, thereby dividing the mounting surface 120 of the bottom wall 121 into two mounting areas, and both sides of the wall seat 14 have a plurality of parallel step surfaces 140, and the two sides of the wall seat 14 are symmetrically provided with a multi-channel collimating light path group 10 and a corresponding multi-channel reflector group 20.

[0067] In other words, the two groups of laser chips 21 are distributed in the two installation areas divided by the wall seat 14, the laser output by one group of laser chips 21 is transmitted along the first direction A, and the laser output by the other group of laser chips 21 is transmitted along the direction opposite to the first direction A, and the lasers output by the two groups of laser chips 21 are each transmitted along the vertical direction after passing through the bottom reflector 31, and then each transmitted along the second direction B after passing through the beam combining reflector 32.

[0068] The step surfaces 140 on both sides of the wall base 14 are mirror images of each other. The focusing lens group 40 is arranged on the optical path of the collimated light beam transmitted from the multi-path reflector group 30 , and the optical axis of the focusing lens group 40 can be parallel to the symmetry axis of the wall base 14 .

[0069] The wall seat 14 is connected to the bottom wall 121 as a partition, which can increase the structural strength of the tube shell 10 and the base 12 to prevent beam distortion caused by deformation of the tube shell 10. In addition, the wall seat 14 can be made of lightweight materials without considering heat dissipation performance, which is beneficial to the lightweight design of the semiconductor laser 100.

[0070] The wall seat 14 can be detachably connected to the bottom wall 121, thereby facilitating the maintenance and replacement of the optical devices arranged thereon; when the wall seat 14 and the optical devices thereon are removed, the base 12 will not be deformed, thereby ensuring the quality of the laser output beam; in addition, when the optical devices are being maintained or replaced, they are kept away from the laser chip 21, which can effectively prevent the debris generated during the maintenance and replacement from damaging the laser chip 21.

[0071] The laser chips 21 on both sides of the wall seat 14 emit light in opposite directions, so that the laser chips 21 on both sides are far apart, and thermal crosstalk is not easy to occur. The heat dissipation condition of the laser chip 21 is better, which is conducive to reducing the temperature of the laser chip 21 and improving the reliability of the product. In addition, due to the symmetrical setting, the optical path of the light beam emitted by the laser chip 21 on each side to the coupling unit is similar, and the optical path difference between the two is small, which can make the coupling effect better.

[0072] Optionally, the emission direction of the focusing lens group 40 is the same as the second direction B, wherein each multi-path collimating light path group 20 and multi-path reflecting mirror group 30 corresponds to a group of focusing lens group 40, or each multi-path collimating light path group 20 and multi-path reflecting mirror group 30 corresponds to the same group of focusing lens group 40.

[0073] For example, Figure 4 As shown, the optical axis of the focusing lens group 40 is parallel to the symmetry axis of the wall base 14 , and the collimated light beams output from both sides of the wall base 14 are transmitted to the focusing lens group 40 .

[0074] Or, if Figure 5 As shown, there are two focusing lens groups 40 , which correspond to the collimated light beams on one side of the wall base 14 , respectively. Correspondingly, a corresponding input optical fiber 50 is disposed behind each focusing lens group 40 .

[0075] Optionally, see Figure 6 The semiconductor laser 100 also includes a secondary light path reflector 71 and a beam combining prism 72. The beam combining prism 72 is arranged on an output light path of one multi-path reflector group 30, and the secondary light path reflector 71 is arranged on an output light path of another multi-path reflector group 30. The secondary light path reflector 71 is used to reflect the corresponding collimated light beam to an incident surface of the beam combining prism 72, so that the two collimated light beams are combined through the beam combining prism 72.

[0076] Specifically, the light beams emitted by one group of laser chips 21 are reflected by the beam combining reflector 32 and then incident on an incident surface of the beam combining prism 72 along the second direction B; the light beams emitted by the other group of laser chips 21 are reflected by the beam combining reflector 32 and then transmitted to the secondary light path reflector 71 along the second direction B. After passing through the secondary light path reflector 71, the incident direction is changed and incident on the other incident surface of the beam combining prism 72 in the same direction or in the opposite direction to the first direction A. The beam combining prism 72 combines the two light beams into one and transmits it to the focusing lens group 40.

[0077] Furthermore, the semiconductor laser 100 may also include a main optical path reflector group 60, which is arranged on the optical path between the multi-path reflector group 30 and the focusing mirror group 40, and specifically can be arranged on the optical path between the beam combining prism 72 and the focusing mirror group 40, and is used to adjust the transmission direction of the optical path of the collimated light beam after being reflected by the multi-path reflector group 30, wherein the emission direction of the focusing mirror group 40 is parallel to the first direction A, or the focusing mirror group 40 is located above the multi-path collimated optical path group 20 and the emission direction of the focusing mirror group 40 is opposite to the second direction A, and light can also be emitted from any side of the semiconductor laser 100, which will not be repeated.

[0078] Different from the prior art, the present application discloses a semiconductor laser. By setting a wall seat on the base, the wall seat is used to arrange a reflector group, so that the collimated light beam transmitted along the mounting surface is turned to be transmitted in a direction parallel to the step surface, and the three-dimensional space above the mounting surface is used to arrange the reflector group and even part of the optical devices in the collimated light path group, and the three-dimensional space above the mounting surface is used to accommodate the light path, so that the overall structure of the semiconductor laser is more compact, and its spatial size and volume are reduced; multiple collimated light path groups are installed on the same mounting surface, and the bottom wall of the base can be set as a flat plate with uniform thickness, which can reduce the processing accuracy requirements for the bottom wall and is also convenient for setting The cooling water channel in the bottom wall also dissipates heat for each laser chip more evenly; further, each reflector group is arranged on different step surfaces on the wall seat, so as to utilize the misalignment difference formed between the step surfaces to cause the reflected collimated light beam to be misaligned, thereby preventing the front reflector group from blocking the collimated light beam reflected by the rear reflector group, and utilizing the assembly relationship between the reflector group and the step surface, each reflected collimated light beam can be emitted along the second direction, which can greatly reduce the risk of tilt and deformation of each collimated light beam during transmission, ensure the parallelism between each collimated light beam, and reduce the difficulty of adjusting the light beam.

[0079] The above descriptions are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A semiconductor laser, characterized in that: The semiconductor laser comprises: The tube shell comprises a base and a wall seat, wherein the base has a mounting surface, and the wall seat is arranged on the mounting surface of the base and is provided with a plurality of parallel step surfaces perpendicular to the mounting surface; A multi-path collimated light path group, each of which is arranged on the mounting surface and is arranged corresponding to each of the step surfaces in sequence, and is used to emit a multi-path collimated light beam along a first direction parallel to the mounting surface; A multi-path reflector group is sequentially arranged on each of the step surfaces, and is used to respectively reflect the multiple paths of the collimated light beams to a plane higher than the mounting surface and transmit them along a second direction parallel to the mounting surface, where the second direction is different from the first direction.

2. The semiconductor laser according to claim 1, characterized in that The base includes a bottom wall provided with the mounting surface, and the wall seat is a side wall connected to one side of the bottom wall; or The wall seat is connected to the non-edge area of ​​the bottom wall.

3. The semiconductor laser according to claim 1, characterized in that The base includes a bottom wall provided with the mounting surface, the wall seat is a partition connected to the bottom wall, thereby dividing the mounting surface of the bottom wall into two mounting areas, and both sides of the wall seat have a plurality of parallel step surfaces, and the multi-path collimating light path group and the corresponding multi-path reflector group are symmetrically arranged on both sides of the wall seat.

4. The semiconductor laser according to claim 3, characterized in that The semiconductor laser also includes a secondary light path reflector and a beam combining prism. The beam combining prism is arranged on an output light path of one path of the multi-path reflector group, and the secondary light path reflector is arranged on an output light path of another path of the multi-path reflector group. The secondary light path reflector is used to reflect the corresponding collimated light beam to an incident surface of the beam combining prism, so that the two collimated light beams are combined through the beam combining prism.

5. The semiconductor laser according to any one of claims 1 to 4, characterized in that: The semiconductor laser further comprises a focusing mirror group, which is arranged on the optical path of the collimated light beam transmitted by the multi-path reflector group; The emission direction of the focusing lens assembly is the same as the second direction; or The semiconductor laser also includes a main light path reflector group, which is arranged on the light path between the multi-path reflector group and the focusing mirror group, and is used to adjust the transmission direction of the light path of the collimated light beam after being reflected by the multi-path reflector group, wherein the emission direction of the focusing mirror group is parallel to the first direction, or the focusing mirror group is located above the multi-path collimated light path group and the emission direction of the focusing mirror group is opposite to the second direction.

6. The semiconductor laser according to claim 5, characterized in that Each of the multi-path collimating light path group and the multi-path reflecting mirror group corresponds to a group of the focusing mirror group, or each of the multi-path collimating light path group and the multi-path reflecting mirror group corresponds to the same group of the focusing mirror group.

7. The semiconductor laser according to claim 5, characterized in that The tube shell also includes an upper cover connected to the base, the main light path reflector group and the focusing lens group are both arranged on the surface of the upper cover facing the mounting surface of the base, and the focusing lens group is also located above the collimating light path group.

8. The semiconductor laser according to claim 1, characterized in that The reflector group includes a bottom reflector and a beam combining reflector spaced apart along the step surface, and the collimating optical path group includes a laser chip, a fast axis collimator and a slow axis collimator, wherein the laser chip, the fast axis collimator and the slow axis collimator are arranged on the mounting surface along the first direction, and the laser output by the laser chip passes through the fast axis collimator, the slow axis collimator, the bottom reflector and the beam combining reflector in sequence; or The laser chip and the fast-axis collimator are arranged on the mounting surface along the first direction, the slow-axis collimator is arranged on the step surface and is located between the bottom reflector and the beam-combining reflector, and the laser output by the laser chip passes through the fast-axis collimator, the bottom reflector, the slow-axis collimator and the beam-combining reflector in sequence.

9. The semiconductor laser according to claim 8, characterized in that The beam combining reflectors are located at the same height, and because they are arranged on different step surfaces, the reflected collimated light beams are staggered and located on the same plane.

10. The semiconductor laser according to claim 1, characterized in that The mounting surface is a plane, the first direction is perpendicular to the step surface, and the second direction is perpendicular to the first direction.

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