Inductive load circuit of gallium nitride device and electronic equipment

Abstract

The utility model discloses an inductive load circuit of a gallium nitride device and electronic equipment, which are used in the technical field of gallium nitride. According to the utility model, when the gallium nitride device is in a turn-off state, the drain-source electrode voltage of the gallium nitride device is clamped in the maximum withstand voltage of the drain-source electrode of the gallium nitride device through the clamping circuit, so that the gallium nitride device can be effectively prevented from being broken down by the voltage and losing efficacy; the gate-source voltage of the gallium nitride device is adjusted through a potential self-building circuit, the gallium nitride device is controlled to work in a semi-conduction state, the current of the inductor is released, and the turn-off process of the gallium nitride device is completed; according to the utility model, in the turn-off process of the gallium nitride device, the clamping circuit and the potential self-building circuit are signal circuits, the power of the gallium nitride inductive load circuit is not additionally consumed, the power loss of the gallium nitride inductive load circuit can be effectively avoided, and the system efficiency of the gallium nitride inductive load circuit is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of gallium nitride, and in particular to an inductive load circuit of a gallium nitride device and an electronic device. Background Art

[0002] Power semiconductor devices are widely used in power electronics technology, motor drives, load switches and other fields. In the application scenarios of inductive loads, such as load switches and motor drives, there are very high requirements for the robustness of power semiconductor devices. The robustness includes the avalanche tolerance and safe operating area (SOA) of power semiconductor devices.

[0003] As the third generation of power semiconductor devices, GaN devices have gradually replaced traditional Si-MOS devices in various fields due to their high frequency characteristics, low loss and other advantages. GaN devices have excellent safe operating area (SOA) and have unique advantages in the application of inductive load circuits such as load switches and motor drives. However, GaN devices do not have avalanche breakdown characteristics. When the drain-source voltage on the GaN device exceeds the maximum withstand voltage of the drain-source voltage of the GaN device, the GaN device will be broken down by the voltage and fail.

[0004] In the existing inductive load circuit of GaN devices, multiple diodes (such as transient suppression diodes or voltage regulator diodes, etc.) are often connected in parallel between the drain and source of GaN devices, and the drain-source voltage of GaN devices is clamped not to exceed its maximum withstand voltage by utilizing the avalanche breakdown characteristics of the diodes. However, the diodes connected in parallel between the drain and source of GaN devices are power circuits, which will consume the power of the GaN inductive load circuit, and multiple parallel diodes will increase power loss, which is likely to reduce the system efficiency of the GaN inductive load circuit. Utility Model Content

[0005] The utility model provides an inductive load circuit of a gallium nitride device and an electronic device, which can effectively avoid power loss of the gallium nitride inductive load circuit and improve the system efficiency of the gallium nitride inductive load circuit.

[0006] The utility model provides an inductive load circuit of a gallium nitride device, comprising: a gallium nitride device, an inductor, a power supply, a driving circuit, a clamping circuit and a potential self-building circuit;

[0007] One end of the inductor is connected to the power supply, and the other end of the inductor is connected to the drain of the gallium nitride device; the driving circuit is connected to the gate of the gallium nitride device, and is used to transmit a driving signal to the gate of the gallium nitride device to drive the gallium nitride device to be in an on state or an off state;

[0008] One end of the clamp circuit is connected to the drain of the gallium nitride device, and the other end of the clamp circuit is connected to the gate of the gallium nitride device;

[0009] One end of the potential self-built circuit is connected to the gate of the gallium nitride device, and the other end of the potential self-built circuit is connected to the source of the gallium nitride device;

[0010] When the GaN device is in the off state, the clamping circuit is used to clamp the drain-source voltage of the GaN device within the maximum tolerance voltage of the drain-source of the GaN device, and the potential self-building circuit is used to adjust the gate-source voltage of the GaN device, control the GaN device to work in a semi-conducting state, and release the current of the inductor.

[0011] Further, the driving circuit includes: a source resistor, a pull-up switch, a pull-down switch, a pull-down resistor and a gate resistor;

[0012] Wherein, one end of the source terminal resistor is connected to a driving power supply, and the other end of the source terminal resistor is connected to one end of the pull-up switch;

[0013] The other end of the pull-up switch is respectively connected to one end of the pull-down switch and one end of the gate resistor;

[0014] The other end of the gate resistor is connected to the gate of the gallium nitride device;

[0015] The other end of the pull-down switch is connected to one end of the pull-down resistor, and the other end of the pull-down resistor is grounded.

[0016] Further, the clamping circuit includes a first diode and a second diode;

[0017] The cathode of the first diode is connected to the drain of the gallium nitride device, the anode of the first diode is connected to the cathode of the second diode, and the anode of the second diode is connected to the gate of the gallium nitride device;

[0018] Alternatively, the anode of the first diode is connected to the gate of the gallium nitride device, the cathode of the first diode is connected to the cathode of the second diode, and the anode of the second diode is connected to the drain of the gallium nitride device.

[0019] Furthermore, the clamping circuit includes a first NMOS tube and a second NMOS tube;

[0020] The source of the first NMOS tube is respectively connected to the drain of the gallium nitride device and the gate of the first NMOS tube;

[0021] The drain of the first NMOS tube is connected to the drain of the second NMOS tube;

[0022] The source of the second NMOS tube is connected to the gate of the gallium nitride device and the gate of the second NMOS tube respectively.

[0023] Furthermore, the clamping circuit includes a first NMOS tube and a second NMOS tube;

[0024] The drain of the second NMOS tube is connected to the drain of the gallium nitride device, and the source of the second NMOS tube is respectively connected to the gate of the second NMOS tube, the source of the first NMOS tube, and the gate of the first NMOS tube;

[0025] The drain of the first NMOS tube is connected to the gate of the gallium nitride device.

[0026] Further, the potential self-building circuit includes a fixed resistor;

[0027] One end of the fixed resistor is connected to the gate of the gallium nitride device, and the other end of the fixed resistor is connected to the source of the gallium nitride device.

[0028] Further, the potential self-built circuit includes a target gallium nitride device and a target resistor;

[0029] The source of the target gallium nitride device is connected to the gate of the target gallium nitride device and the gate of the gallium nitride device respectively;

[0030] The drain of the target gallium nitride device is connected to one end of the target resistor, and the target resistor is connected to the source of the gallium nitride device.

[0031] Further, the potential self-built circuit includes a target gallium nitride device and a target resistor;

[0032] One end of the target resistor is connected to the drain of the gallium nitride device, and the other end of the target resistor is connected to the source of the target gallium nitride device and the gate of the target gallium nitride device respectively;

[0033] The drain of the target gallium nitride device is connected to the source of the gallium nitride device.

[0034] Furthermore, the source of the gallium nitride device is grounded.

[0035] The utility model also provides an electronic device, the electronic device comprising the above

[0036] It can be seen from the above technical solutions that the utility model has the following advantages:

[0037] In the utility model, the inductive load circuit of the gallium nitride device includes: a gallium nitride device, an inductor, a power supply, a driving circuit, a clamping circuit and a potential self-building circuit; one end of the inductor is connected to the power supply, and the other end of the inductor is connected to the drain of the gallium nitride device; the driving circuit is connected to the gate of the gallium nitride device and is used to transmit a driving signal to the gate of the gallium nitride device to drive the gallium nitride device to be in an on state or an off state; one end of the clamping circuit is connected to the drain of the gallium nitride device, and the other end of the clamping circuit is connected to the gate of the gallium nitride device; one end of the potential self-building circuit is connected to the gate of the gallium nitride device, and the other end of the potential self-building circuit is connected to the source of the gallium nitride device;

[0038] When the GaN device is in the off state, the drain-source voltage of the GaN device is clamped within the maximum withstand voltage of the drain-source of the GaN device through the clamping circuit, which can effectively prevent the GaN device from being broken down by voltage and failing; and the gate-source voltage of the GaN device is adjusted through the potential self-building circuit, the GaN device is controlled to work in a semi-conducting state, the current of the inductor is released, and the shutdown process of the GaN device is completed; in the utility model, during the shutdown process of the GaN device, the clamping circuit and the potential self-building circuit are signal circuits, and the power of the GaN inductive load circuit will not be consumed additionally, which can effectively avoid the power loss of the GaN inductive load circuit and improve the system efficiency of the GaN inductive load circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solution in the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0040] Figure 1 This is a circuit diagram of an inductive load of an existing gallium nitride device disclosed in the utility model;

[0041] Figure 2 A circuit diagram of an existing gallium nitride device connected in parallel with a diode disclosed in the utility model;

[0042] Figure 3 A block diagram of an inductive load circuit of a gallium nitride device disclosed in the utility model;

[0043] Figure 4 A schematic diagram of an inductive load circuit of a gallium nitride device disclosed in the utility model;

[0044] Figure 5 A current and voltage waveform diagram in an inductive load circuit disclosed by the utility model;

[0045] Figure 6A schematic diagram of a clamping circuit disclosed in the utility model;

[0046] Figure 7 It is a schematic diagram of another clamping circuit disclosed in the utility model;

[0047] Figure 8 The utility model discloses a schematic diagram of a potential self-reducing circuit. DETAILED DESCRIPTION

[0048] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings in the present invention. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0049] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they cannot be understood as limitations on the present invention.

[0050] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0051] The inductive load circuit of existing GaN devices is as follows: Figure 1As shown, the power supply is connected to the drain D of the GaN device through an inductor, and the source S of the GaN device is grounded. The GaN device can be turned on or off by sending a level signal to the gate of the GaN device. When the GaN device is in the on state, the inductor starts to charge, and the inductor current starts to rise from zero; when the GaN device is in the off state, the inductor starts to discharge, and the inductor current cannot change suddenly, and the inductor current gradually decreases from the highest point of the current. At this time, the inductor current charges the capacitor between the drain and source of the GaN device, and the drain-source voltage rises rapidly; however, the GaN device does not have an avalanche breakdown characteristic. When the drain-source voltage on the GaN device exceeds the maximum tolerance voltage of the drain-source voltage of the GaN device, the GaN device will be broken down by the voltage and fail.

[0052] In order to prevent the GaN device from being broken down by voltage, in the inductive load circuit of the GaN device, multiple diodes (such as transient suppression diodes or voltage regulator diodes, etc.) are often connected in parallel between the drain and source of the GaN device. Figure 2 As shown. By utilizing the avalanche breakdown characteristics of the diode, the drain-source voltage of the GaN device is clamped so as not to exceed its maximum withstand voltage, and the inductive current is released through the diode after avalanche breakdown. However, the diode connected in parallel between the drain and source of the GaN device is a power circuit, which will consume the power of the GaN inductive load circuit, and multiple parallel diodes will increase the power loss, which can easily lead to a reduction in the system efficiency of the GaN inductive load circuit. Therefore, the utility model provides an inductive load circuit of a GaN device, which can effectively avoid the power loss of the GaN inductive load circuit and improve the system efficiency of the GaN inductive load circuit; as shown Figure 3 As shown, the details are as follows:

[0053] In the present invention, the inductive load circuit of the gallium nitride device includes: a gallium nitride device, an inductor, a power supply, a drive circuit, a clamping circuit and a potential self-building circuit; it can be understood that the inductive load circuit refers to a load circuit with an inductance parameter.

[0054] Among them, one end of the inductor is connected to the power supply, and the other end of the inductor is connected to the drain of the gallium nitride device, and the power output by the power supply is transmitted to the gallium nitride device through the inductor. The driving circuit is connected to the gate of the gallium nitride device and is used to transmit a driving signal to the gate of the gallium nitride device to drive the gallium nitride device to be in the on state or the off state. It can be understood that the driving circuit can transmit a level signal to the gate of the gallium nitride device to control the gallium nitride device to be in the on state or the off state; for example, a high level signal can be transmitted to the gate of the gallium nitride device to control the gallium nitride device to be in the on state, and a low level signal can be transmitted to the gate of the gallium nitride device to control the gallium nitride device to be in the off state.

[0055] One end of the clamp circuit is connected to the drain of the gallium nitride device, and the other end of the clamp circuit is connected to the gate of the gallium nitride device; one end of the potential self-built circuit is connected to the gate of the gallium nitride device, and the other end of the potential self-built circuit is connected to the source of the gallium nitride device. When the gallium nitride device is in the off state, the drain-source voltage of the gallium nitride device will continue to increase due to the inductor current charging the capacitor between the drain and the source on the gallium nitride device. The clamp circuit may be provided with a corresponding clamp threshold, and when the drain-source voltage of the gallium nitride device reaches the clamp threshold, the clamp circuit may clamp the drain-source voltage of the gallium nitride device within the maximum tolerance voltage of the drain-source of the gallium nitride device. It can be understood that the clamp threshold is less than the maximum tolerance voltage of the drain-source of the gallium nitride device, that is, the clamp circuit maintains the drain-source voltage of the gallium nitride device at a fixed voltage, and the fixed voltage does not exceed the maximum tolerance voltage of the drain-source of the gallium nitride device.

[0056] The potential self-built circuit is used to adjust the gate-source voltage of the GaN device, control the GaN device to work in a semi-conducting state, and make the GaN device work in the safe working area; at this time, the current of the inductor can be released from the drain to the source of the GaN device. It can be understood that the semi-conducting state means that after the GaN device is adjusted by the gate voltage and the source voltage, the carrier channel is in the conducting state; that is, the safe working area of ​​the GaN device can be used to control the GaN device to work in a semi-conducting state through the potential self-built circuit, and the inductor current can be released in the safe working area of ​​the GaN device.

[0057] The source of the GaN device is grounded, and the inductor current can be released to the ground through the drain and source of the GaN device; the source of the GaN device can also be connected to a load, and the inductor current can be released to the load, which is not limited here.

[0058] It can be seen that in the present invention, the inductive load circuit of the gallium nitride device includes: a gallium nitride device, an inductor, a power supply, a driving circuit, a clamping circuit and a potential self-building circuit; one end of the inductor is connected to the power supply, and the other end of the inductor is connected to the drain of the gallium nitride device; the driving circuit is connected to the gate of the gallium nitride device and is used to transmit a driving signal to the gate of the gallium nitride device to drive the gallium nitride device to be in an on state or an off state; one end of the clamping circuit is connected to the drain of the gallium nitride device, and the other end of the clamping circuit is connected to the gate of the gallium nitride device; one end of the potential self-building circuit is connected to the gate of the gallium nitride device, and the other end of the potential self-building circuit is connected to the source of the gallium nitride device;

[0059] When the GaN device is in the off state, the drain-source voltage of the GaN device is clamped within the maximum withstand voltage of the drain-source of the GaN device through the clamping circuit, which can effectively prevent the GaN device from being broken down by voltage and failing; and the gate-source voltage of the GaN device is adjusted through the potential self-building circuit, the GaN device is controlled to work in a semi-conducting state, the current of the inductor is released, and the shutdown process of the GaN device is completed; in the utility model, during the shutdown process of the GaN device, the clamping circuit and the potential self-building circuit are signal circuits, and the power of the GaN inductive load circuit will not be consumed additionally, which can effectively avoid the power loss of the GaN inductive load circuit and improve the system efficiency of the GaN inductive load circuit.

[0060] In an practicable manner, when a diode is connected in parallel between the drain and source of a gallium nitride device, multiple diodes are often connected in parallel between the drain and source of the gallium nitride device, and connecting multiple diodes in parallel easily increases the circuit cost of the inductive load circuit of the gallium nitride device and increases the volume of the inductive load circuit. In the present invention, by connecting a clamping circuit between the drain and gate of the gallium nitride device and connecting a potential self-built circuit between the gate and source of the gallium nitride device, the problem that the gallium nitride device is unusable in the inductive load application scenario due to lack of avalanche tolerance can be effectively solved, and multiple diodes do not need to be connected in parallel, which can effectively save the circuit cost of the inductive load circuit of the gallium nitride device and reduce the volume of the inductive load circuit.

[0061] The inductive load circuit of GaN devices will be described in detail below. Figure 4 As shown, the details are as follows:

[0062] The driving circuit includes: a source resistor Rsource, a pull-up switch S1, a pull-down switch S2, a pull-down resistor Rsink and a gate resistor Rg; one end of the source resistor Rsource is connected to a driving power supply, and the other end of the source resistor Rsource is connected to one end of the pull-up switch S1; the other end of the pull-up switch S1 is respectively connected to one end of the pull-down switch S2 and one end of the gate resistor Rg; the other end of the gate resistor Rg is connected to the gate of the gallium nitride device; the other end of the pull-down switch S2 is connected to one end of the pull-down resistor Rsink, and the other end of the pull-down resistor Rsink is grounded. In the driving circuit, a level signal is transmitted to the gate of the GaN device by controlling the pull-up switch S1 and the pull-down switch S2. For example, when the pull-up switch S1 is closed and the pull-down switch S2 is disconnected, a high level signal is transmitted to the gate of the GaN device. The GaN device is in the on state, the inductor is charged, and the inductor current starts to rise from zero. When the pull-up switch S1 is disconnected and the pull-down switch S2 is closed, a low level signal is transmitted to the gate of the GaN device. The GaN device is in the off state, and the inductor current charges the capacitor between the drain and source of the GaN device, and the drain-source voltage will continue to rise.

[0063] Furthermore, the clamping circuit includes a first diode D1 and a second diode D2; the cathode of the first diode D1 is connected to the drain of the gallium nitride device, the anode of the first diode D1 is connected to the cathode of the second diode D2, and the anode of the second diode D2 is connected to the gate of the gallium nitride device. At this time, the corresponding clamping threshold in the clamping circuit is the maximum withstand voltage of the first diode D1. When the drain-source voltage of the gallium nitride device exceeds the maximum withstand voltage of the first diode D1, part of the inductor current will flow through the first diode D1-second diode D2-potential self-built circuit (self-built circuit) to the ground.

[0064] Furthermore, the potential self-built circuit includes a fixed resistor Rclamp; one end of the fixed resistor Rclamp is connected to the gate of the GaN device, and the other end of the fixed resistor Rclamp is connected to the source of the GaN device. That is, after the drain-source voltage of the GaN device exceeds the maximum withstand voltage of the first diode D1, part of the inductor current will flow through the first diode D1-the second diode D2-the fixed resistor Rclamp to the ground, and the drain-source voltage of the GaN device will no longer rise.

[0065] like Figure 5 As shown, Vgs is the gate-source voltage of the GaN device (because the source is grounded, that is, Vgs is the gate voltage), Vds is the drain-source voltage of the GaN device, and I_inductor is the inductor current; at this time, the gate-source voltage Vgs of the GaN device = Id1*Rclamp, where Id1 is the current flowing through the first diode D1. The gate-source voltage Vgs of the GaN device will continue to decrease. When the gate-source voltage Vgs decreases to exceed the threshold voltage of the GaN device, the GaN device will work in a semi-conducting state; where the threshold voltage refers to the minimum turn-on voltage applied to the gate of the GaN device when the source-drain current of the GaN device is turned on. At this time, the inductor current can be released to the ground through the channel between the drain and source of the GaN device until the inductor current is reduced to zero; the drain-source voltage of the GaN device returns to the voltage VDD of the power supply, and the clamping circuit and the potential self-building circuit are turned off. The gate voltage of the GaN device is pulled down to zero potential.

[0066] Further, such as Figure 6 As shown, the connection mode of the first diode D1 and the second diode D2 in the clamping circuit can also be: the anode of the first diode D1 is connected to the gate of the gallium nitride device, the cathode of the first diode D1 is connected to the cathode of the second diode D2, and the anode of the second diode D2 is connected to the drain of the gallium nitride device.

[0067] Furthermore, the clamping circuit may further include a first NMOS transistor M1 and a second NMOS transistor M2. Figure 7As shown, the source of the first NMOS tube M1 is respectively connected to the drain of the gallium nitride device and the gate of the first NMOS tube M1. The drain of the first NMOS tube M1 is connected to the drain of the second NMOS tube M2; the source of the second NMOS tube M2 is respectively connected to the gate of the gallium nitride device and the gate of the second NMOS tube M2. It can be understood that the connection of the gate and source of the NMOS tube can make the NMOS tube have diode characteristics, that is, at this time, the source of the NMOS tube can be understood as the anode of the diode, and the drain of the NMOS tube can be understood as the cathode of the diode. The NMOS tube can be a depletion type or an enhancement type, which is not specifically limited here, and can also be replaced by a PMOS tube, which is not specifically limited here.

[0068] Furthermore, the connection mode of the first NMOS tube M1 and the second NMOS tube M2 in the clamping circuit can also be: the drain of the second NMOS tube M2 is connected to the drain of the gallium nitride device, the source of the second NMOS tube M2 is respectively connected to the gate of the second NMOS tube M2, the source of the first NMOS tube M1 and the gate of the first NMOS tube M1; the drain of the first NMOS tube M1 is connected to the gate of the gallium nitride device.

[0069] Furthermore, the potential self-building circuit may also include a target GaN device M3 and a target resistor R, such as Figure 8 As shown, the source of the target gallium nitride device M3 is connected to the gate of the target gallium nitride device M3 and the gate of the gallium nitride device respectively; the drain of the target gallium nitride device M3 is connected to one end of the target resistor R, and the target resistor R is connected to the source of the gallium nitride device. It can be understood that the connection between the gate and the source of the target gallium nitride device M3 can make the target gallium nitride device M3 have a diode characteristic, that is, at this time, the source of the target gallium nitride device M3 can be understood as the anode of the diode, and the drain of the target gallium nitride device M3 can be understood as the cathode of the diode.

[0070] Furthermore, the target gallium nitride device M3 and the target resistor R in the potential self-built circuit can also be connected in the following manner: one end of the target resistor R is connected to the drain of the gallium nitride device, and the other end of the target resistor R is respectively connected to the source of the target gallium nitride device M3 and the gate of the target gallium nitride device M3; the drain of the target gallium nitride device M3 is connected to the source of the gallium nitride device.

[0071] It can be seen that in the present invention, when the GaN device is in the off state, the drain-source voltage of the GaN device is clamped within the maximum tolerance voltage of the drain-source of the GaN device through the clamping circuit, which can effectively prevent the GaN device from being broken down by voltage and failing; and the gate-source voltage of the GaN device is adjusted through the potential self-building circuit, the GaN device is controlled to work in a semi-conducting state, the current of the inductor is released, and the shutdown process of the GaN device is completed; in the present invention, during the shutdown process of the GaN device, the clamping circuit and the potential self-building circuit are signal circuits, and will not consume the power of the GaN inductive load circuit additionally, which can effectively avoid the power loss of the GaN inductive load circuit and improve the system efficiency of the GaN inductive load circuit.

[0072] The utility model also provides an electronic device, which comprises the inductive load circuit of the gallium nitride device.

[0073] In the present invention, the terms "first", "second", "third", and "fourth" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The term "plurality" refers to two or more, unless otherwise clearly defined.

[0074] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments can still be modified, or some or all of the technical features can be replaced by equivalents. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention, and they should all be included in the scope of the claims and specification of the present invention.

Claims

1. An inductive load circuit of a gallium nitride device, characterized in that: include: GaN devices, inductors, power supplies, drive circuits, clamping circuits, and potential self-built circuits; One end of the inductor is connected to the power supply, and the other end of the inductor is connected to the drain of the gallium nitride device; the driving circuit is connected to the gate of the gallium nitride device, and is used to transmit a driving signal to the gate of the gallium nitride device to drive the gallium nitride device to be in an on state or an off state; One end of the clamp circuit is connected to the drain of the gallium nitride device, and the other end of the clamp circuit is connected to the gate of the gallium nitride device; One end of the potential self-built circuit is connected to the gate of the gallium nitride device, and the other end of the potential self-built circuit is connected to the source of the gallium nitride device; When the GaN device is in the off state, the clamping circuit is used to clamp the drain-source voltage of the GaN device within the maximum tolerance voltage of the drain-source of the GaN device, and the potential self-building circuit is used to adjust the gate-source voltage of the GaN device, control the GaN device to work in a semi-conducting state, and release the current of the inductor.

2. The inductive load circuit according to claim 1, characterized in that: The driving circuit comprises: a source resistor, a pull-up switch, a pull-down switch, a pull-down resistor and a gate resistor; Wherein, one end of the source terminal resistor is connected to a driving power supply, and the other end of the source terminal resistor is connected to one end of the pull-up switch; The other end of the pull-up switch is respectively connected to one end of the pull-down switch and one end of the gate resistor; The other end of the gate resistor is connected to the gate of the gallium nitride device; The other end of the pull-down switch is connected to one end of the pull-down resistor, and the other end of the pull-down resistor is grounded.

3. The inductive load circuit according to claim 1, characterized in that: The clamping circuit includes a first diode and a second diode; The cathode of the first diode is connected to the drain of the gallium nitride device, the anode of the first diode is connected to the cathode of the second diode, and the anode of the second diode is connected to the gate of the gallium nitride device; Alternatively, the anode of the first diode is connected to the gate of the gallium nitride device, the cathode of the first diode is connected to the cathode of the second diode, and the anode of the second diode is connected to the drain of the gallium nitride device.

4. The inductive load circuit according to claim 1, characterized in that: The clamping circuit includes a first NMOS tube and a second NMOS tube; The source of the first NMOS tube is respectively connected to the drain of the gallium nitride device and the gate of the first NMOS tube; The drain of the first NMOS tube is connected to the drain of the second NMOS tube; The source of the second NMOS tube is connected to the gate of the gallium nitride device and the gate of the second NMOS tube respectively.

5. The inductive load circuit according to claim 1, characterized in that: The clamping circuit includes a first NMOS tube and a second NMOS tube; The drain of the second NMOS tube is connected to the drain of the gallium nitride device, and the source of the second NMOS tube is respectively connected to the gate of the second NMOS tube, the source of the first NMOS tube, and the gate of the first NMOS tube; The drain of the first NMOS tube is connected to the gate of the gallium nitride device.

6. The inductive load circuit according to claim 1, characterized in that: The potential self-building circuit includes a fixed resistor; One end of the fixed resistor is connected to the gate of the gallium nitride device, and the other end of the fixed resistor is connected to the source of the gallium nitride device.

7. The inductive load circuit according to claim 1, characterized in that: The potential self-built circuit includes a target gallium nitride device and a target resistor; The source of the target gallium nitride device is connected to the gate of the target gallium nitride device and the gate of the gallium nitride device respectively; The drain of the target gallium nitride device is connected to one end of the target resistor, and the target resistor is connected to the source of the gallium nitride device.

8. The inductive load circuit according to claim 1, characterized in that: The potential self-built circuit includes a target gallium nitride device and a target resistor; One end of the target resistor is connected to the drain of the gallium nitride device, and the other end of the target resistor is connected to the source of the target gallium nitride device and the gate of the target gallium nitride device respectively; The drain of the target gallium nitride device is connected to the source of the gallium nitride device.

9. The inductive load circuit according to claim 1, characterized in that: The source of the gallium nitride device is grounded.

10. An electronic device, characterized in that: The electronic device comprises the inductive load circuit according to any one of claims 1 to 9.

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