Novel thick-film resistor ceramic substrate manufactured by laser processing
By using long and round hole structures manufactured by laser processing on ceramic substrates, the hole density and depth are increased, the quality problems of traditional ceramic substrates during laser processing are solved, and the stability and reliability of the product are improved.
Patent Information
- Application Number
- CN202421461369.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-25
- Publication Date
- 2025-05-16
- Estimated Expiration
- 2034-06-25
AI Technical Summary
During laser processing of traditional thick film resistance ceramic substrates, the hole density is low, resulting in the product being prone to quality problems such as polygons, missing corners and fragmentation after RF load, affecting the stability and reliability of product performance and quality.
The new ceramic substrate manufactured by laser processing increases the hole position density and depth by providing a plurality of laser processing long holes on the surface of the first ceramic substrate and a plurality of laser processing circular holes on the surface of the second ceramic substrate.
It effectively avoids quality problems such as polygons, missing corners and product fragmentation, improves product quality, stability and reliability, and improves product qualification rate and production efficiency.
Smart Images

Figure CN222883323U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of design and processing of a ceramic substrate, one of the main raw materials of a thick film resistor, in particular to a new ceramic substrate of a thick film resistor manufactured by laser processing. Background Art
[0002] Thick film resistors usually use aluminum nitride ceramic substrates or alumina ceramic substrates as substrates. The ceramic substrates have excellent properties such as high strength, high hardness, high temperature resistance, corrosion resistance, excellent thermal conductivity and stable dielectric constant. They are generally used to manufacture electronic components such as capacitors, resistors, and inductors. The new ceramic substrates manufactured by laser processing have high precision, and the laser beam can be focused to a very small size, which is suitable for precision processing. Thick film RF loads are generally thick-film printed, sintered, laser-trimmed on a ceramic substrate, and then the product is split to form the final product.
[0003] Traditional thick film resistor ceramic substrates use circular laser processing ceramic substrate technology. The laser processing holes are large and the hole density is low. After the RF load is printed, sintered, and laser-trimmed, quality problems such as multiple corners, missing corners, and product fragmentation are prone to occur during product splitting, which seriously affects product performance, quality stability and reliability, and has a low product qualification rate.
[0004] Therefore, those skilled in the art provide a novel ceramic substrate for thick film resistors manufactured by laser processing to solve the above problems. Utility Model Content
[0005] The utility model aims to provide a novel ceramic substrate of thick film resistor manufactured by laser processing, so as to solve the problems raised in the above background technology.
[0006] In order to achieve the above purpose, the utility model provides the following technical solutions:
[0007] A novel ceramic substrate for thick film resistors manufactured by laser processing, comprising a first ceramic substrate and a second ceramic substrate, wherein a plurality of laser processed long holes are arranged on the surface of the first ceramic substrate, and the length of the long holes is about 70 μm;
[0008] Furthermore, the long hole spacing is about 80 μm, and the long hole depth is about 650 μm;
[0009] Furthermore, the surface of the second ceramic substrate is provided with a plurality of laser-processed circular holes, and the diameter of the circular holes is about 110 μm;
[0010] Furthermore, the circular hole spacing is about 150 μm, and the circular hole depth is about 420 μm.
[0011] Compared with the prior art, the beneficial effects of the utility model are as follows: a new type of ceramic substrate for thick film resistors manufactured by laser processing, which forms long holes by laser processing a rectangular slot structure, and increases the density and depth of the long holes at the same time. The length of the laser processed long holes is about 70μm, and the spacing between the laser processed long holes is about 80μm. Compared with the traditional laser processed round holes with a diameter of about 110μm and a spacing of about 150μm, the processing hole density is increased, and the processing depth is also increased, effectively avoiding quality problems such as multiple corners, missing corners and product fragmentation, which can effectively ensure the quality, stability and reliability of the product, and improve the product qualification rate and product production efficiency. The utility model transforms the traditional laser processed round holes of the ceramic substrate into long holes, increases the processing hole density, and increases the processing depth, effectively avoiding quality problems such as multiple corners, missing corners and product fragmentation, and improves the processing efficiency and product qualification rate. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] Figure 1 This is a schematic diagram of the structure of the length and spacing of the long holes of the utility model;
[0013] Figure 2 It is a schematic diagram of the depth dimension of the long hole of the utility model;
[0014] Figure 3 This is a structural schematic diagram of the length and spacing of the circular holes of the utility model;
[0015] Figure 4 It is a schematic diagram of the depth dimension of the circular hole of the utility model.
[0016] In the figure: 1, first ceramic sheet; 2, second ceramic sheet; 3, long hole; 4, round hole. DETAILED DESCRIPTION
[0017] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0018] The terms “left”, “right”, “front”, “back”, “up” and “down” mentioned in the following description are oriented in the viewing direction of the front view.
[0019] See also Figures 1 to 4 In the embodiment of the utility model, a new ceramic substrate for thick film resistors manufactured by laser processing includes a first ceramic substrate 1 and a second ceramic substrate 2. The surface of the first ceramic substrate 1 is provided with a plurality of laser processed long holes 3, and the length of the long holes 3 is about 70 μm;
[0020] The spacing between the long holes 3 is about 80 μm, and the depth of the long holes 3 is about 650 μm;
[0021] The surface of the second ceramic substrate 2 is provided with a plurality of laser-processed circular holes 4, and the diameter of the circular holes 4 is about 110 μm;
[0022] The distance between the circular holes 4 is about 150 μm, and the depth of the circular holes 4 is about 420 μm;
[0023] By laser processing a rectangular hollow slot structure, a long hole 3 is formed, and at the same time the density and depth of the long hole 3 are increased. The length of the laser processed long hole 3 is about 70 μm, and the spacing between the laser processed long holes 3 is about 80 μm. Compared with the traditional laser processed round holes 4, the diameter is about 110 μm, and the spacing between the laser processed round holes 4 is about 150 μm. While increasing the density of processed holes, the processing depth is also increased, effectively avoiding quality problems such as multiple corners, missing corners and product fragmentation, which can effectively ensure the quality, stability and reliability of the product, and improve the product qualification rate and product production efficiency.
[0024] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements will not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims
1. A novel ceramic substrate for thick film resistors manufactured by laser processing, comprising a first ceramic substrate (1) and a second ceramic substrate (2), characterized in that: The surface of the first ceramic substrate (1) is provided with a plurality of laser-processed long holes (3), and the length of the long holes (3) is 70 μm.
2. The novel ceramic substrate for thick film resistor manufactured by laser processing according to claim 1, characterized in that: The spacing between the long holes (3) is 80 μm, and the depth of the long holes (3) is 650 μm.
3. The novel ceramic substrate for thick film resistor manufactured by laser processing according to claim 2, characterized in that: The surface of the second ceramic substrate (2) is provided with a plurality of laser-processed circular holes (4), and the diameter of the circular holes (4) is 110 μm.
4. The novel ceramic substrate for thick film resistor manufactured by laser processing according to claim 3, characterized in that: The circular holes (4) have a spacing of 150 μm and a depth of 420 μm.