Detection circuit for gate trigger characteristic of power semiconductor device

Abstract

The utility model discloses a detection circuit for gate trigger characteristics of a power semiconductor device. The detection circuit comprises a detected power semiconductor device, a positive and negative electrode conduction generator, a conduction state detection device, a gate trigger generator and a trigger state detection device. By controlling the voltage source mode and the current source mode of the gate pole trigger device, the gate pole trigger voltage and the gate pole trigger current are detected respectively, continuous and high-accuracy characterization of the gate pole trigger characteristic can be realized, and the problem that the gate pole trigger characteristic is influenced when a single current source or a single voltage source is adopted for current and voltage acquisition is solved. And the sampling error is relatively large due to sudden signal change.

Description

Technical Field

[0001] The utility model relates to the technical field of power electronics, and particularly relates to a detection circuit for the gate triggering characteristics of a power semiconductor device. Background Art

[0002] Power semiconductor devices, also known as power electronic devices or power electronics devices, are one of the most core devices in the electronic industrial chain. Power semiconductor devices can realize electric energy conversion and circuit control, and mainly play roles such as power conversion, power amplification, power switching, line protection, inversion (DC to AC), and rectification (AC to DC) in a circuit.

[0003] Thyristors have the advantages of high efficiency, flexibility, reliability, and the ability to withstand high voltage levels. Therefore, thyristors, as high-voltage switching devices, are widely used in power systems. The gate triggering characteristic is one of the important characteristics of thyristor devices. A smaller gate triggering current means a simpler gate drive circuit and lower cost, but it has poor robustness and may cause problems of mis-triggering; a larger gate triggering current usually requires a more complex and higher-power gate drive circuit, and the cost is also higher. Therefore, accurately evaluating the gate triggering characteristics of thyristor devices is crucial for the performance evaluation and application of the devices.

[0004] Currently, the commonly used detection circuit for gate triggering characteristics usually designs according to the test circuit schematic diagram in Section 9.1.7 of the standard "GB / T 15291-2015 Semiconductor Devices - Part 6: Thyristors", as Figure 1 shown. Among them, T is the device under test; G is a voltage generator, R 1 is a resistor, and the voltage generator G and the resistor R 1 together determine the on-state current of the device; A 1 is an ammeter, which serves as an on-state current sampling unit and is used to determine the conduction situation of the device under test; V is a voltmeter, A 2 is an ammeter, and the voltmeter V and the ammeter A 2 are respectively electrical sampling units for measuring the gate triggering voltage and the gate triggering current; U is a gate triggering device, usually an adjustable current source, which is used to provide a gate triggering current for the device under test.

[0005] Therefore, the existing detection circuit for the gate triggering characteristics of thyristor devices uses a single current source to collect the gate triggering voltage and the gate triggering current, and it is easy to cause large sampling errors due to signal mutations during the actual measurement process. Summary of the Utility Model

[0006] In view of this, the main purpose of the present utility model is to provide a detection circuit for the gate triggering characteristics of a power semiconductor device, in order to at least partially solve the above technical problems.

[0007] To achieve the above object, the present utility model provides a detection circuit for the gate triggering characteristics of a power semiconductor device, including a power semiconductor device under test, an anode-cathode conduction generator, a conduction state detection device, a gate triggering generator, and a triggering state detection device. Among them, the anode-cathode conduction generator includes a first voltage source and a resistor connected in series between the anode and the cathode of the power semiconductor device under test; the conduction state detection device includes a first voltmeter and / or a first ammeter for detecting the conduction state of the power semiconductor device under test; the gate triggering generator includes a second voltage source and a current source connected in parallel between the gate and the cathode of the power semiconductor device under test; the triggering state detection device includes a second voltmeter and a second ammeter for detecting the gate triggering characteristics of the power semiconductor device under test.

[0008] Optionally, the gate triggering characteristics include gate triggering current and gate triggering voltage.

[0009] Optionally, the detection circuit further includes a switching switch for selecting and switching between the second voltage source and the current source to respectively achieve the detection of the gate triggering voltage and the gate triggering current.

[0010] Optionally, the gate triggering generator is an integrated power supply.

[0011] Optionally, the integrated power supply has a constant voltage output mode and a constant current output mode; the integrated power supply selects the constant voltage output mode or the constant current output mode according to the detected gate triggering characteristics.

[0012] Optionally, the detection circuit further includes a gate grounding resistor connected between the gate and the cathode of the power semiconductor device under test.

[0013] Optionally, the power semiconductor device under test is a thyristor.

[0014] Optionally, the thyristor is any one of GCT, GTO, and IGCT.

[0015] Thus, the detection circuit for the gate triggering characteristics of the power semiconductor device of the present utility model has at least one of the following beneficial effects compared with the prior art:

[0016] By controlling the voltage source mode and the current source mode of the gate triggering device, the present utility model respectively realizes the detection of the gate triggering voltage and the gate triggering current, can realize the continuous and high-accuracy characterization of the gate triggering characteristics, and avoids the problem of large sampling errors caused by signal mutations when using a single current source or voltage source for current and voltage acquisition.

[0017] In addition, the detection circuit of the present utility model has high flexibility and convenience, low circuit cost, and strong controllability. Description of the Drawings

[0018] Figure 1 is a schematic diagram of a detection circuit for the gate triggering characteristics of a power semiconductor device in the prior art;

[0019] Figure 2 is a schematic diagram of a detection circuit for the gate triggering characteristics of a power semiconductor device according to a specific embodiment of the present utility model;

[0020] Figure 3 is a schematic diagram of a detection circuit for the gate triggering characteristics of a power semiconductor device according to another specific embodiment of the present utility model.

[0021] Reference Signs:

[0022] DUT Power semiconductor device under test; V AK First voltage source; R Resistor; V 1 First voltmeter; A 1 First ammeter; V G Second voltage source; I G Current source; V 2 Second voltmeter; A 2 Second ammeter; S 1 、S 2 Switch; P 1 、P 2 、P 3 Potential point; R' Gate ground resistor; U' Integrated power supply. Detailed Embodiment

[0023] To make the objectives, technical solutions, and advantages of the present utility model clearer and more understandable, the present utility model will be further described in detail below with reference to specific embodiments and the accompanying drawings.

[0024] The present utility model provides a detection circuit for the gate triggering characteristics of a power semiconductor device, which can respectively implement the detection of the gate trigger voltage and the gate trigger current, and avoid large sampling errors caused by signal mutations during the detection process.

[0025] Specifically, in a specific embodiment, the present utility model provides a detection circuit for the gate triggering characteristics of a power semiconductor device, as Figure 2 shown, including a power semiconductor device under test DUT, an anode-cathode conduction generator, a conduction state detection device, a gate trigger generator, a trigger state detection device, switches S 1 and S 2 , wherein, the anode-cathode conduction generator includes an anode P of the power semiconductor device under test DUT1 and the cathode P 2 A first voltage source V connected in series therebetween AK and a resistor R; the conduction state detection device includes a first voltmeter V 1 and a first ammeter A 1 , for detecting the conduction state of the power semiconductor device under test DUT; the gate trigger generator includes a gate P of the power semiconductor device under test DUT 3 and the cathode P 2 A second voltage source V connected in parallel therebetween G and a current source I G ; the trigger state detection device includes a second voltmeter V 2 and a second ammeter A 2 , for detecting the gate trigger characteristics of the power semiconductor device under test DUT; the switching switches S 1 and S 2 are used to select and switch between the second voltage source V G and the current source I G to respectively implement the detection of the gate trigger voltage and the gate trigger current.

[0026] Preferably, the detection circuit of this embodiment may further include a gate grounding resistor R', and the gate grounding resistor R' can be connected between the gate P of the power semiconductor device under test DUT 3 and the cathode P 2 to make the gate voltage zero when no test signal is output.

[0027] Preferably, the power semiconductor device under test DUT can be a thyristor, such as any one of GCT, GTO, and IGCT.

[0028] The working mode of the detection circuit of this specific embodiment is as follows:

[0029] Set the junction temperature of the power semiconductor device under test DUT to a specified value, and increase the output of the first voltage source V AK to the specified value of the off-state voltage. Switch the switching switch to S 1 to connect the current source I G between the gate P of the power semiconductor device under test DUT 3 and the cathode P 2 , and gradually increase the output current of the current source I G until the power semiconductor device under test DUT just turns on. The turn-on state of the power semiconductor device under test DUT is determined by the value of the ammeter A 1 or the voltmeter V 1 in the conduction state detection device. The ammeter A 2The maximum recorded value is the gate trigger current of the power semiconductor device under test (DUT).

[0030] Switch the change - over switch to S 2 , so that the second voltage source V G is connected between the gate P 3 and the cathode P 2 of the power semiconductor device under test (DUT). Gradually increase the output voltage of the second voltage source V G until the device under test just turns on. The on - state of the power semiconductor device under test (DUT) is determined by the value of the ammeter A 1 or the voltmeter V 1 in the conduction - state detection device. The maximum recorded value of the voltmeter V 2 is the gate trigger voltage of the power semiconductor device under test (DUT).

[0031] In another specific embodiment, the present utility model provides a detection circuit for the gate trigger characteristics of a power semiconductor device, as Figure 3 shown, which includes a power semiconductor device under test (DUT), an anode - cathode conduction generator, a conduction - state detection device, a gate trigger generator, and a trigger - state detection device. Among them, the anode - cathode conduction generator includes a first voltage source V 1 and a resistor R connected in series between the anode P 2 and the cathode P AK of the power semiconductor device under test (DUT); the conduction - state detection device includes a first voltmeter V 1 and a first ammeter A 1 , which is used to detect the conduction state of the power semiconductor device under test (DUT); the gate trigger generator is an integrated power supply U', which is connected between the gate P 3 and the cathode P 2 of the power semiconductor device under test (DUT); the trigger - state detection device includes a second voltmeter V 2 and a second ammeter A 2 , which is used to detect the gate trigger characteristics of the power semiconductor device under test (DUT); change - over switches S 1 and S 2 are used to select and switch between the second voltage source V G and the current source I G to respectively realize the detection of the gate trigger voltage and the gate trigger current.

[0032] Preferably, the integrated power supply U' includes a second voltage source V G and a current source I G, having a constant voltage (CV) output mode and a constant current (CC) output mode, the integrated power supply selects the constant voltage output mode or the constant current output mode according to the detected gate triggering characteristics. Specifically, when detecting the gate triggering voltage of the device under test (DUT) power semiconductor device, the constant voltage output mode is selected, and the second voltage source V G is connected to the circuit and connected between the gate P 3 and the cathode P 2 of the DUT power semiconductor device; when detecting the gate triggering current of the DUT power semiconductor device, the constant current output mode is selected, and the current source I G is connected to the circuit and connected between the gate P 3 and the cathode P 2 of the DUT power semiconductor device.

[0033] Preferably, the detection circuit of this embodiment may further include a gate grounding resistor R', and the gate grounding resistor R' can be connected between the gate P 3 and the cathode P 2 of the DUT power semiconductor device, and its function is to make the gate voltage zero when no test signal is output.

[0034] Preferably, the DUT power semiconductor device can be a thyristor, for example, any one of GCT, GTO, and IGCT.

[0035] The working mode of the detection circuit of this specific embodiment is as follows:

[0036] Set the junction temperature of the DUT power semiconductor device to a specified value, and increase the output of the first voltage source V AK to the specified value of the off-state voltage. Adjust the integrated power supply U' to the constant current output mode, and gradually increase the output current of the integrated power supply U' until the DUT power semiconductor device just turns on. The on-state of the DUT power semiconductor device is determined by the value of the ammeter A 1 or the voltmeter V 1 in the conduction state detection device. The maximum recorded value of the ammeter A 2 is the gate triggering current of the DUT power semiconductor device.

[0037] Adjust the integrated power supply U' to the constant voltage output mode, and gradually increase the output voltage of the integrated power supply U' until the device under test just turns on. The on-state of the DUT power semiconductor device is determined by the value of the ammeter A 1 or the voltmeter V 1 in the conduction state detection device. The maximum recorded value of the voltmeter V 2 is the gate triggering voltage of the DUT power semiconductor device.

[0038] It has been detected and proved that the detection circuit for the gate triggering characteristics of the power semiconductor device of the present utility model can realize the continuous and highly accurate characterization of the gate triggering characteristics. Even if signal mutations occur during the test process, the detection effect is basically not affected.

[0039] The specific embodiments described above have further elaborated on the purpose, technical solution, and beneficial effects of the present utility model. It should be understood that the above are only specific embodiments of the present utility model and are not used to limit the present utility model. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model.

Claims

1. A detection circuit for gate trigger characteristics of a power semiconductor device, characterized in that: It comprises a power semiconductor device under test, an anode-cathode conduction generator, a conduction state detection device, a gate trigger generator and a trigger state detection device, wherein the anode-cathode conduction generator comprises a first voltage source and a resistor connected in series between the anode and the cathode of the power semiconductor device under test; the conduction state detection device comprises a first voltmeter and / or a first ammeter for detecting the conduction state of the power semiconductor device under test; the gate trigger generator comprises a second voltage source and a current source connected in parallel between the gate and the cathode of the power semiconductor device under test; and the trigger state detection device comprises a second voltmeter and a second ammeter for detecting the gate trigger characteristics of the power semiconductor device under test.

2. The detection circuit according to claim 1, characterized in that: The gate trigger characteristics include gate trigger current and gate trigger voltage.

3. The detection circuit according to claim 2, characterized in that: The detection circuit also includes a switch for selectively switching between the second voltage source and the current source to respectively detect the gate trigger voltage and the gate trigger current.

4. The detection circuit according to claim 2, characterized in that: The gate trigger generator is an integrated power supply.

5. The detection circuit according to claim 4, characterized in that: The integrated power supply has a constant voltage output mode and a constant current output mode; the integrated power supply selects the constant voltage output mode or the constant current output mode according to the detected gate trigger characteristics.

6. The detection circuit according to claim 1, characterized in that: The detection circuit also includes a gate grounding resistor, and the gate grounding resistor is connected between the gate and cathode of the power semiconductor device under test.

7. The detection circuit according to claim 1, characterized in that: The power semiconductor device under test is a thyristor.

8. The detection circuit according to claim 7, characterized in that: The thyristor is any one of GCT, GTO and IGCT.

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