Novel snakelike MOS device for integrated circuit
By adopting the design of serpentine heat transfer aluminum frame plate and heat dissipation fins in MOS devices, combined with the flame retardant strips made of ceramic silicon, the problem of poor heat evacuation and safety hazards of MOS devices at high temperatures is solved, and a safer and more reliable high-temperature operation is achieved.
Patent Information
- Application Number
- CN202421947030.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-13
- Publication Date
- 2025-05-27
- Estimated Expiration
- 2034-08-13
AI Technical Summary
Existing MOS devices are not easy to evacuate heat when operating temperature is high, and have flame retardant and safety hazards, and are unsafe and reliable in use.
A new serpentine MOS device for integrated circuits is designed, using a serpentine heat transfer aluminum frame ring between the drain, gate and source bearing frame, and a heat dissipation fin is installed on the circuit board, combined with a flame retardant strip made of ceramic silicon material to achieve uniform heat transfer and safe flame retardant.
Effectively evacuate heat, improve the safety and reliability of the device, and ensure stable operation under high temperature conditions.
Smart Images
Figure CN222914792U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of MOS devices, and particularly relates to a novel serpentine MOS device for integrated circuits. Background Art
[0002] An integrated circuit composed of main components, abbreviated as MOSIC, is a commonly used integrated circuit. A MOS device is a carrier, and a MOS transistor is a metal-oxide-semiconductor field-effect transistor. The source and drain of a MOS transistor can be swapped. They are both N-type regions formed in a P-type backgate. In most cases, these two regions are the same, and even if the two ends are swapped, it will not affect the performance of the device. Such a device is considered symmetric. MOS transistors belong to power devices, especially MOS transistors used in products such as inverter power supplies, solar controllers, discharge meters, and UPS power supplies.
[0003] In the specification of a prior art (publication number CN218471957U) of a low-voltage MOS device, it is mentioned that "it includes a housing, a first carrier frame, a second carrier frame, a third carrier frame, a low-voltage MOS chip, and a bidirectional ESD chip respectively arranged inside the housing; the low-voltage MOS chip is arranged on the first carrier frame; one end of the first carrier frame extends to be provided with a plurality of first pins; one end of the second carrier frame extends to be provided with a plurality of second pins; one end of the third carrier frame extends to be provided with a plurality of third pins; the low-voltage MOS chip is arranged on the first carrier frame; the bidirectional ESD chip is arranged on the third carrier frame", but the MOS device in the prior art is not easy to dissipate heat and is flame-retardant when the operating temperature is high, there are certain safety hazards, and it is not safe and reliable to use. Summary of the Utility Model
[0004] To overcome the defects existing in the prior art, the present utility model provides a novel serpentine MOS device for integrated circuits to solve the problems that the MOS device in the prior art is not easy to dissipate heat and is flame-retardant when the operating temperature is high, there are certain safety hazards, and it is not safe and reliable to use.
[0005] To achieve the above object, a novel serpentine MOS device for integrated circuits is provided, including a serpentine MOS device, a drain carrier frame, and a gate carrier frame. A circuit board is arranged on the upper end surface of the serpentine MOS device, and a serpentine heat transfer aluminum frame board is arranged on the circuit board. A front groove is opened on the right side of the front part of the serpentine heat transfer aluminum frame board, a middle groove is opened on the left side of the middle part of the serpentine heat transfer aluminum frame board, and a rear groove is opened on the right side of the rear part of the serpentine heat transfer aluminum frame board. The drain carrier frame is installed in the front groove, the gate carrier frame is installed in the middle groove, and the source carrier frame is installed in the rear groove.
[0006] Further, a first flame retardant strip is provided on the front side of the serpentine MOS device, a second flame retardant strip is provided in the middle of the right side of the serpentine MOS device, and a third flame retardant strip is provided on the rear side of the serpentine MOS device. At the same time, the first flame retardant strip, the second flame retardant strip and the third flame retardant strip are all made of ceramic silicon material.
[0007] Further, heat dissipation fins are provided on the upper end surface of the serpentine heat transfer aluminum frame plate, and the heat dissipation fins are made of thin aluminum alloy material.
[0008] Further, a first sub-chip is provided on the upper end surface of the drain carrier frame, and multiple drain pins are provided on the right end of the drain carrier frame.
[0009] Further, a main chip is provided on the upper end surface of the gate carrier frame, and multiple gate pins are provided on the left end of the gate carrier frame.
[0010] Further, a second sub-chip is provided on the upper end surface of the source carrier frame, and multiple source pins are provided on the right end of the source carrier frame.
[0011] The beneficial effects of the present utility model are as follows:
[0012] 1. The first flame retardant strip, the second flame retardant strip and the third flame retardant strip provided at various places on the outer edge of the serpentine MOS device in the present utility model play a role in safety flame retardance and wear-resistant and durable use effects, and the setting is safer and more reliable.
[0013] 2. In the present utility model, the serpentine heat transfer aluminum frame plate is arranged between the drain carrier frame, the gate carrier frame and the source carrier frame, and the heat dissipation fins provided on the upper end surface of the serpentine heat transfer aluminum frame plate are all for uniformly transferring and dissipating heat of the present device, which helps to dissipate heat out.
[0014] 3. The main chip on the gate carrier frame in the present utility model is used as the main control chip for processing and analyzing, while the first sub-chip and the second sub-chip are used as auxiliary chip structures to help the main chip process part of the data information work. Dividing the work makes the processing speed faster, more convenient and practical. Description of the Drawings
[0015] Figure 1 It is a schematic diagram of the effect of the embodiment of the present utility model;
[0016] Figure 2 It is a schematic diagram of the serpentine heat transfer aluminum frame plate structure of the embodiment of the present utility model;
[0017] Figure 3 It is a schematic diagram of the drain carrier frame of the embodiment of the present utility model;
[0018] Figure 4 It is a schematic diagram of the gate carrier frame of the embodiment of the present utility model.
[0019] In the figure: 1. Serpentine MOS device; 10. Circuit board; 11. Serpentine heat-conducting aluminum frame board; 12. Heat dissipation fins; 13. Front groove; 14. Middle groove; 15. Rear groove; 16. First flame retardant strip; 17. Second flame retardant strip; 18. Third flame retardant strip; 2. Drain carrier frame; 20. First sub-chip; 21. Drain pin; 3. Gate carrier frame; 30. Main chip; 31. Gate pin; 4. Source carrier frame; 40. Second sub-chip; 41. Source pin. Specific embodiments
[0020] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. The specific embodiments described herein are only used to explain the present utility model and are not used to limit the present utility model. Specific details such as specific system structures and technologies are proposed to more thoroughly understand the embodiments of the present utility model. The described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. However, those skilled in the art should understand that the present utility model can also be implemented in other embodiments without these specific details. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present disclosure.
[0021] The specific embodiments of the present utility model will be described in detail below with reference to the accompanying drawings.
[0022] Figure 1 It is a schematic diagram of the effect of the embodiment of the present utility model, Figure 2 It is a schematic diagram of the structure of the serpentine heat-conducting aluminum frame board of the embodiment of the present utility model, Figure 3 It is a schematic diagram of the drain carrier frame of the embodiment of the present utility model and Figure 4 It is a schematic diagram of the gate carrier frame of the embodiment of the present utility model.
[0023] Referring to Figures 1 to 4 As shown, the present utility model provides a novel serpentine MOS device for integrated circuits, including a serpentine MOS device 1, a drain carrier frame 2 and a gate carrier frame 3. A circuit board 10 is provided on the upper end surface of the serpentine MOS device 1, and a serpentine heat-conducting aluminum frame board 11 is provided on the circuit board 10. A front groove 13 is opened on the right side of the front part of the serpentine heat-conducting aluminum frame board 11, a middle groove 14 is opened on the left side of the middle part of the serpentine heat-conducting aluminum frame board 11, and a rear groove 15 is opened on the right side of the rear part of the serpentine heat-conducting aluminum frame board 11. A drain carrier frame 2 is installed in the front groove 13, a gate carrier frame 3 is installed in the middle groove 14, and a source carrier frame 4 is installed in the rear groove 15.
[0024] In this embodiment, a first flame retardant strip 16 is provided on the front side of the serpentine MOS device 1, a second flame retardant strip 17 is provided in the middle of the right side of the serpentine MOS device 1, and a third flame retardant strip 18 is provided on the rear side of the serpentine MOS device 1. At the same time, the first flame retardant strip 16, the second flame retardant strip 17, and the third flame retardant strip 18 are all made of ceramic silicon material.
[0025] As a preferred embodiment, the first flame retardant strip 16, the second flame retardant strip 17, and the third flame retardant strip 18 provided at various outer edges of the serpentine MOS device 1 of the present utility model play a role in safety flame retardant and wear-resistant and durable use effects, and the setting is safer and more reliable.
[0026] In this embodiment, heat dissipation fins 12 are provided on the upper end surface of the serpentine heat transfer aluminum frame plate 11, and the heat dissipation fins 12 are made of thin aluminum alloy material.
[0027] As a preferred embodiment, the serpentine heat transfer aluminum frame plate 11 of the present utility model is arranged around the drain carrier frame 2, the gate carrier frame 3, and the source carrier frame 4, and the heat dissipation fins 12 provided on the upper end surface of the serpentine heat transfer aluminum frame plate 11 are all for uniformly transferring heat and dissipating heat from this device, which helps to evacuate heat.
[0028] In this embodiment, a first sub-chip 20 is provided on the upper end surface of the drain carrier frame 2, and multiple groups of drain pins 21 are provided on the right end of the drain carrier frame 2; a main chip 30 is provided on the upper end surface of the gate carrier frame 3, and multiple groups of gate pins 31 are provided on the left end of the gate carrier frame 3; a second sub-chip 40 is provided on the upper end surface of the source carrier frame 4, and multiple groups of source pins 41 are provided on the right end of the source carrier frame 4.
[0029] As a preferred embodiment, the main chip 30 on the gate carrier frame 3 of the present utility model is used as the main control chip for processing and analyzing, while the first sub-chip 20 and the second sub-chip 40 are used as auxiliary chip structures to help the main chip 30 process part of the data information work. The division of labor makes the processing speed faster, more convenient, and more practical.
[0030] The present utility model can effectively solve the problems in the prior art that when the MOS device runs at a high temperature, it is not easy to evacuate heat and is flame retardant, there are certain safety hazards, and the use is not safe and reliable. The present utility model uses a serpentine heat transfer aluminum frame plate on the circuit board to be arranged around the drain, gate, and source carrier frames, which is convenient for separation processing, helps to evenly evacuate heat, and is safe and flame retardant. The use of the main and sub-three chips for analysis and processing is faster and more convenient.
[0031] The above embodiments are used to explain the present utility model, rather than to limit the utility model. Any modifications and changes made to the present utility model within the spirit of the present utility model and the scope of the claimed rights for application protection shall be included within the protection scope of the present utility model.
Claims
1. A novel serpentine MOS device for integrated circuits, characterized in that: The invention comprises a serpentine MOS device (1), a drain supporting frame (2) and a gate supporting frame (3); the upper end surface of the serpentine MOS device (1) is provided with a circuit board (10), and the circuit board (10) is provided with a serpentine heat transfer aluminum frame plate (11); a front groove (13) is provided on the front right side of the serpentine heat transfer aluminum frame plate (11); a middle groove (14) is provided on the middle left side of the serpentine heat transfer aluminum frame plate (11); and a rear groove (15) is provided on the rear right side of the serpentine heat transfer aluminum frame plate (11); the drain supporting frame (2) is installed in the front groove (13), the gate supporting frame (3) is installed in the middle groove (14), and the source supporting frame (4) is installed in the rear groove (15).
2. A novel serpentine MOS device for integrated circuits according to claim 1, characterized in that: The front side of the serpentine MOS device (1) is provided with a first flame retardant strip (16), the middle part of the right side of the serpentine MOS device (1) is provided with a second flame retardant strip (17), and the rear side of the serpentine MOS device (1) is provided with a third flame retardant strip (18), and the first flame retardant strip (16), the second flame retardant strip (17) and the third flame retardant strip (18) are all made of ceramic silicon.
3. A novel serpentine MOS device for integrated circuits according to claim 1, characterized in that: The upper end surface of the serpentine heat transfer aluminum frame plate (11) is provided with a heat dissipation fin (12), and the heat dissipation fin (12) is made of a thin aluminum alloy material.
4. A novel serpentine MOS device for integrated circuits according to claim 1, characterized in that: The upper end surface of the drain supporting frame (2) is provided with a first sub-chip (20), and the right end of the drain supporting frame (2) is provided with a plurality of groups of drain pins (21).
5. A novel serpentine MOS device for integrated circuits according to claim 1, characterized in that: The upper end surface of the gate carrier frame (3) is provided with a main chip (30), and the left end of the gate carrier frame (3) is provided with a plurality of groups of gate pins (31).
6. A novel serpentine MOS device for integrated circuits according to claim 1, characterized in that: The upper end surface of the source carrying frame (4) is provided with a second sub-chip (40), and the right end of the source carrying frame (4) is provided with a plurality of groups of source pins (41).