HVPE equipment with internal thermal compensation device

Abstract

The utility model discloses HVPE equipment with an internal thermal compensation device. The HVPE equipment comprises an HVPE cavity (1) and a carrying disc (2), a heating chamber module (3) is arranged at the bottom of the carrying disc and comprises a disc-shaped base (31) and a box dam (32) which is located on the edge of the disc-shaped base and matched with the edge of the bottom of the carrying disc, a round hole is formed in the center of the disc-shaped base, and a plurality of heating wire supports (33) evenly distributed around the round hole are fixedly connected to the disc-shaped base. A plurality of annular heating wires (34) which are distributed in a concentric circle mode are arranged on the heating wire support, thermocouples (35) which are vertically distributed are arranged between the adjacent annular heating wires and between the innermost annular heating wire and the round hole, and the bottoms of the thermocouples are fixedly connected with the inner bottom of the HVPE cavity. The beneficial effects of the utility model are that through an internal compensation mode, the temperature uniformity of each part of the carrying disc is adjusted, and the temperature consistency of the center and the edge of the carrying disc is ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of gallium nitride production, in particular to an HVPE large-size gallium nitride wafer gallium boat reactor. Background Art

[0002] The main principle of HVPE nitride growth is: using metal gallium as the III-group gallium source, ammonia (NH3) as the V-group nitrogen source, and hydrogen chloride (HCl) as the reaction gas and carried by a carrier gas (hydrogen or nitrogen) through a gallium boat to react with the metal gallium in it to generate gallium chloride (GaCl), which reacts with NH3 above the substrate under the carrier gas (hydrogen or nitrogen) to generate GaN and is deposited on the substrate. The main chemical reactions are as follows:

[0003] 2HCl(g)+2Ga(l)=2GaCl(g)+H2(g)

[0004] GaCl(g)+NH3(g)=GaN(S)+HCl(g)+H2(g)

[0005] GaN, SiC, diamond and ZnO are called third generation semiconductors. They have excellent properties such as higher breakdown voltage, smaller dielectric constant, higher saturated electron drift rate, better thermal conductivity and wider energy gap (Eg≥2.3eV). Among them, GaN is very suitable for making high-frequency, high-power and high-density integrated electronic devices due to its more stable chemical properties, high temperature resistance and corrosion resistance. 2 The protective gas (such as protective gas) enters the chamber from the top air inlet and enters from the side 3 When the carrier is large, there is a temperature difference between the center and edge of the carrier, which leads to inconsistent growth temperature of GaN, affecting the growth rate and quality. Therefore, existing HVPE cannot grow large-sized GaN.

[0006] China Utility Model Patent Publication No. CN114855268B discloses a HVPE device for growing multiple pieces of gallium nitride and its alloys, including a base, a shell, a reactor, a support mechanism, multiple temperature-controlled heaters, a protective shell and a power mechanism; the support mechanism includes a support frame, an inner gear ring, a transmission shaft, a large tray, multiple small trays and a driving motor. The present invention is provided with a support frame, an inner gear ring, a transmission shaft, a large tray, multiple small trays and a driving motor in the support mechanism; when the driving motor drives the large tray to rotate, the small tray is driven to rotate (revolution) with the large tray; the small tray is meshed with the inner gear ring during the rotation process, so that the small tray can rotate around its own center, so as to improve the uniformity of the growth of the substrate; this patent is to solve the problem of uniformity of growth of multiple pieces of gallium nitride, but does not solve the problem of inconsistent temperature of gallium nitride growth caused by a large carrier. Utility Model Content

[0007] The technical problem to be solved by the utility model is that the existing large carrier cannot grow large-size gallium nitride wafers due to the temperature difference between the center and the edge of the carrier, and for this purpose, a HVPE device with an internal thermal compensation device is provided.

[0008] The technical solution of the utility model is: HVPE equipment with internal thermal compensation device, comprising: an HVPE cavity and a carrier; a heating chamber module is arranged at the bottom of the carrier, the heating chamber module comprises a disc-shaped base and a dam located at the edge of the disc-shaped base and matched with the edge of the bottom of the carrier, a circular hole is opened in the center of the disc-shaped base, a plurality of heating wire supports evenly distributed around the circular hole are fixedly connected to the disc-shaped base, a plurality of annular heating wires distributed in concentric circles are arranged on the heating wire supports, vertically distributed thermocouples are arranged between adjacent annular heating wires and between the innermost ring of the annular heating wires and the circular hole, the bottom of the thermocouple is fixedly connected to the inner bottom of the HVPE cavity, a carrier rotating rod is penetrated in the circular hole, one end of the carrier rotating rod is fixedly connected to the bottom of the carrier, a driving mechanism is arranged at the bottom of the HVPE cavity that is transmission-connected to the other end of the carrier rotating rod, and the bottom of the disc-shaped base is fixedly connected to the inner bottom of the HVPE cavity through a plurality of heating chamber support rods.

[0009] The driving mechanism in the above solution comprises: a motor fixedly connected to the outer bottom of the HVPE chamber, and a transmission shaft of the motor is fixedly connected to the other end of the carrier rotating rod through a connecting device.

[0010] The improvement of the above solution is that a protective cover which surrounds the carrier plate and the heating chamber module is fixedly connected to the inner bottom of the HVPE cavity.

[0011] A further improvement of the above solution is that an external heat source is provided outside the HVPE chamber.

[0012] The top of the HVPE cavity in the above scheme is provided with a GaCl3 Gas inlet, the upper part of the side wall of the HVPE chamber is provided with NH 3 and a carrier gas inlet, and an exhaust port is opened at the lower part of the side wall of the HVPE chamber.

[0013] A further improvement of the above solution is that a protective gas inlet located in the protective sleeve is opened at the bottom of the HVPE cavity.

[0014] Another improvement of the above solution is that a connecting flange is fixedly connected to the bottom of the HVPE chamber.

[0015] The beneficial effect of the utility model is to adjust the uniformity of the temperature at various locations of the carrier through internal compensation to ensure that the temperature at the center and edge of the carrier is consistent. The rotation of the carrier makes the growth of HVPE more uniform and can meet the growth of large-sized gallium nitride. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the utility model after removing the thermocouple;

[0017] Figure 2 This is an exploded schematic diagram of the heating chamber module of the utility model;

[0018] Figure 3 This is a schematic diagram of the cooperation between the heating chamber module and the carrier plate of the utility model;

[0019] Figure 4 It is a top view of the heating chamber module in the utility model;

[0020] In the figure, 1. HVPE chamber, 11. GaCl 3 Gas inlet, 12, NH 3 and carrier gas inlet, 13, exhaust port, 14, protective gas inlet, 15, connecting flange, 2, carrier plate, 3, heating chamber module, 31, disc-shaped base, 32, dam, 33, heating wire support, 34, annular heating wire, 35, thermocouple, 36, carrier plate rotating rod, 37, heating chamber support rod, 4, driving mechanism, 41, motor, 42, connecting device, 5, protective cover, 6, external heat source. DETAILED DESCRIPTION

[0021] The technical scheme in the embodiment of the utility model is clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiment is only a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments of ordinary technicians in this field without creative work are within the protection scope of the utility model.

[0022] like Figure 1-4As shown, the utility model includes: HVPE equipment with internal thermal compensation device, including: HVPE cavity 1 and carrier plate 2; a heating chamber module 3 is provided at the bottom of the carrier plate, and the heating chamber module realizes the internal heating of HVPE to ensure that the temperature of each position area of ​​the carrier plate is consistent. The heating chamber module includes a disc-shaped base 31 and a dam 32 located at the edge of the disc-shaped base and matched with the edge of the bottom of the carrier plate. The disc-shaped base and the dam form the outer wall of the heating chamber. High-temperature resistant materials such as molybdenum and tungsten are used. The outer wall is required to be breathable to ensure the flow of gas and ensure the uniformity of temperature. A circular hole is opened in the center of the disc-shaped base, and a plurality of heating wire supports 33 evenly distributed around the circular hole are fixedly connected to the disc-shaped base. A plurality of annular heating wires 34 distributed in concentric circles are arranged on the heating wire supports to ensure consistent heating in the circular area. Adjacent annular heating wires are spaced apart by 1 / 4 in diameter. A vertically distributed thermocouple 35 is provided between the innermost ring heating wire and the circular hole. The number of thermocouples corresponds to the number of heating wires and is close to the carrier to measure the actual temperature of each position of the carrier. The bottom of the thermocouple is fixedly connected to the inner bottom of the HVPE cavity. A carrier rotating rod 36 is passed through the circular hole. One end of the carrier rotating rod is fixedly connected to the bottom of the carrier. The bottom of the HVPE cavity is provided with a driving mechanism 4 that is transmission-connected to the other end of the carrier rotating rod. The bottom of the disc-shaped base is fixedly connected to the inner bottom of the HVPE cavity through a plurality of heating chamber support rods 37. The heating chamber support rods are made of high-temperature resistant alloy.

[0023] The carrier can be a structure for carrying a single GaN wafer or a structure for carrying multiple small-sized GaN wafers. The carrier can be made of materials such as SIC, alumina, and graphite.

[0024] The driving mechanism comprises: a motor 41 fixedly connected to the outer bottom of the HVPE chamber, and a transmission shaft of the motor is fixedly connected to the other end of the carrier rotating rod through a connecting device 42. The connecting device connects the motor and the carrier rotating rod to ensure the rotation of the carrier.

[0025] As a preferred example of the utility model, the inner bottom of the HVPE cavity is fixedly connected with a protective cover 5 surrounding the carrier plate and the heating chamber module to prevent the gallium nitride etc. produced by the reaction from entering the heating chamber module and affecting the life and performance of these components.

[0026] As a preferred example of the utility model, the HVPE chamber is provided with an external heat source 6 to ensure that the chamber can reach a certain temperature. 3 It is in gaseous state and its temperature is kept close to the growth temperature, set at 800℃-1000℃.

[0027] The top of the HVPE cavity is provided with a GaCl 3 The gas inlet 11 is provided with a NH 3and a carrier gas inlet 12, and an exhaust port 13 is provided at the lower part of the side wall of the HVPE chamber. 3 and carrier gas inlet to ensure NH 3 Filled in the cavity, GaCl 3 With NH 3 The reaction generates GaN and a large amount of NH 3 It can ensure high utilization rate of GaCl. The exhaust port is used to discharge the reaction waste gas.

[0028] As a preferred example of the utility model, a protective gas inlet 14 located in the protective cover is opened at the bottom of the HVPE cavity to ensure that positive pressure is maintained in the protective cover, and the gas flows from the protective cover into the cavity to prevent the reaction products from entering the heating chamber module.

[0029] As a preferred example of the utility model, a connecting flange 15 is fixedly connected to the bottom of the HVPE cavity, and cooling water flows through the interior of the cavity to reduce the temperature, thereby preventing the motor and other components from overheating and affecting their performance.

Claims

1. HVPE equipment with internal thermal compensation device, including: An HVPE chamber (1) and a carrier (2); the characteristics are as follows: a heating chamber module (3) is provided at the bottom of the carrier, the heating chamber module comprises a disc-shaped base (31) and a dam (32) located at the edge of the disc-shaped base and cooperating with the edge of the bottom of the carrier, a circular hole is opened at the center of the disc-shaped base, a plurality of heating wire supports (33) evenly distributed around the circular hole are fixedly connected to the disc-shaped base, a plurality of annular heating wires (34) distributed in concentric circles are arranged on the heating wire supports, vertically distributed thermocouples (35) are provided between adjacent annular heating wires and between the innermost annular heating wire and the circular hole, the bottom of the thermocouples is fixedly connected to the inner bottom of the HVPE chamber, a carrier rotating rod (36) is passed through the circular hole, one end of the carrier rotating rod is fixedly connected to the bottom of the carrier, the bottom of the HVPE chamber is provided with a driving mechanism (4) transmission-connected to the other end of the carrier rotating rod, and the bottom of the disc-shaped base is fixedly connected to the inner bottom of the HVPE chamber via a plurality of heating chamber support rods (37).

2. The HVPE device with internal thermal compensation device as claimed in claim 1, characterized in that: The driving mechanism comprises: a motor (41) fixedly connected to the outer bottom of the HVPE cavity, and a transmission shaft of the motor fixedly connected to the other end of the carrier rotating rod via a connecting device (42).

3. The HVPE device with internal thermal compensation device as claimed in claim 1, characterized in that: A protective cover (5) is fixedly connected to the inner bottom of the HVPE cavity and surrounds the carrier plate and the heating chamber module.

4. The HVPE device with internal thermal compensation device as claimed in claim 1, characterized in that: An external heat source (6) is provided outside the HVPE cavity.

5. The HVPE device with internal thermal compensation device as claimed in claim 1, characterized in that: A GaCl3 gas inlet (11) is provided at the top of the HVPE chamber, an NH3 and carrier gas inlet (12) is provided at the upper portion of the side wall of the HVPE chamber, and an exhaust port (13) is provided at the lower portion of the side wall of the HVPE chamber.

6. The HVPE device with internal thermal compensation device as claimed in claim 1, characterized in that: A protective gas inlet (14) located in the protective sleeve is provided at the bottom of the HVPE cavity.

7. The HVPE device with internal thermal compensation device as claimed in claim 1, characterized in that: A connecting flange (15) is fixedly connected to the bottom of the HVPE chamber.

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