Gas mixing device and semiconductor processing equipment

Abstract

The utility model discloses a gas mixing device and semiconductor processing equipment, the gas mixing device comprises: a mixing bin body, one end of which is provided with an input end for receiving a plurality of gases, and the other end of which is provided with an output end for outputting a plurality of mixed gases; the gas mixing piece is arranged in the mixing bin body, and a first buffer area is arranged between one side of the gas mixing piece and the input end; the gas uniformizing part is arranged in the mixing bin body, a second buffer area is spaced between one side of the gas uniformizing part and the other side of the gas mixing part, and a storage area is spaced between the other side of the gas uniformizing part and the output end; the space shape of the first buffer area is arranged in a conical divergence mode in the gas flow direction, and the space shape of the storage area is arranged in a conical gathering mode in the gas flow direction. The space shapes of the first buffer area and the storage area are designed to be conical, vortex and dead areas can be prevented from being formed in the gas flowing process, and the effect of preventing gas backflow can also be achieved. And various gases are mixed by the gas mixing piece and then are homogenized by the gas homogenizing piece, so that the mixed gas is more uniform.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing, and particularly relates to a gas mixing device and a semiconductor processing equipment. Background Art

[0002] When various processes are carried out in a semiconductor thin film device, according to the process requirements, it is often necessary to mix multiple process gases in advance and then enter the reaction chamber of the device. Therefore, it is necessary to add a gas mixing device before the process gas outlet cabinet or liquid cabinet. Secondly, some processes require a large amount of mixed process gases to enter the reaction chamber to participate in the reaction. Therefore, some machines need to add a filling tank before entering the reaction chamber to ensure that there is sufficient gas supply during the process reaction.

[0003] With the continuous progress of semiconductor coating technology, the requirement for film thickness uniformity is becoming more and more strict. The interior of the filling tank body in the prior art is cylindrical, and there are dead zones when the gas flows in, generating eddy currents, causing problems such as gas backflow. And there is no gas homogenizing structure after the gas is mixed inside the tank body, resulting in poor uniformity of the mixed gas. Summary of the Utility Model

[0004] The purpose of the utility model is to provide a gas mixing device and a semiconductor processing equipment, aiming to solve the problems of gas backflow and uneven mixing when the filling tank in the prior art mixes gas inside.

[0005] To solve the above technical problems, the purpose of the utility model is realized through the following technical solutions: providing a gas mixing device, including: a mixing chamber body, a gas mixing member, and a gas homogenizing member;

[0006] One end of the mixing chamber body is provided with an input end for receiving multiple gases, and the other end of the gas homogenizing member is provided with an output end for outputting the mixed multiple gases;

[0007] The gas mixing member is arranged inside the mixing chamber body, and there is a first buffer zone between one side of the gas mixing member and the input end;

[0008] The gas homogenizing member is arranged inside the mixing chamber body, there is a second buffer zone between one side of the gas homogenizing member and the other side of the gas mixing member, and there is a storage area between the other side of the gas homogenizing member and the output end;

[0009] Wherein, the spatial shape of the first buffer zone is arranged in a conical divergence along the gas flow direction, and the spatial shape of the storage area is arranged in a conical convergence along the gas flow direction.

[0010] Further, a flow guiding portion is provided on one side of the gas mixing member. The flow guiding portion is located in the first buffer zone and is configured to diffuse the gas in the first buffer zone from the middle to the radial outer side; the gas mixing member has a plurality of first through holes extending from one side thereof to the other side, and the plurality of first through holes are circumferentially distributed on the radial outer side of the flow guiding portion.

[0011] Further, the shape of the flow guiding portion is a conical frustum shape, and the top of the flow guiding portion corresponds to the input end.

[0012] Further, the gas homogenizing member has a plurality of second through holes extending from one side thereof to the other side, and the plurality of second through holes are circumferentially distributed; the diameter of the circle formed by the plurality of second through holes is smaller than the diameter of the circle formed by the plurality of first through holes.

[0013] Further, the aperture diameters of the first through holes and / or the second through holes are all arranged to increase along the gas flow direction.

[0014] Further, the plurality of first through holes are radially distributed around the central axis of the gas mixing member for at least one circle, and each circle of first through holes is inclined and centrifugally arranged around the central axis of the gas mixing member.

[0015] Further, the inclined centrifugal directions of the multiple circles of first through holes are the same or opposite.

[0016] Further, the plurality of first through holes are radially distributed around the central axis of the gas homogenizing member for at least one circle, and the plurality of second through holes are arranged parallel to the central axis of the gas homogenizing member.

[0017] Further, the gas mixing device further includes: at least two gas source branches, a pressure switch, an output pipeline, a diaphragm valve, and a vacuum gauge;

[0018] Each gas source branch is configured to provide at least one gas;

[0019] The pressure switch is connected between all the gas source branches and the input end of the mixing chamber body;

[0020] One end of the output pipeline is connected to the output end of the mixing chamber body;

[0021] The diaphragm valve is connected to the other end of the output pipeline;

[0022] The vacuum gauge is arranged on the output pipeline and is configured to detect and monitor the gas pressure in the storage area.

[0023] An embodiment of the present invention further provides a semiconductor processing device, including the gas mixing device as described above; further including a process chamber and an input pipeline; the input pipeline is coupled between the gas mixing device and the process chamber and is configured to supply the mixed multiple gases output by the gas mixing device to the process chamber.

[0024] The beneficial effects of the embodiments of the present utility model are as follows: A variety of gases are input into the mixing chamber through the input end, and after passing through the first buffer zone, the gas mixing component, the second buffer zone, the gas equalizing component, and the storage zone in sequence, the mixing can be completed. During this mixing process, the gas will not form vortices and dead zones in the conical spaces of the first buffer zone and the storage zone, which can play a certain role in preventing the gas from flowing back. In addition, after the gas is mixed by the gas mixing component, it first reaches the second buffer zone for slow flow, and then enters the gas equalizing component for gas equalization, making the mixed gas flowing into the storage zone more uniform. Finally, it can be output from the output end to the process chamber of the semiconductor processing equipment to ensure the uniformity of the semiconductor coating process. Description of the Drawings

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are some embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0026] Figure 1 It is a schematic diagram of the internal structure of the mixing chamber provided by the embodiment of the present utility model.

[0027] Figure 2 It is a three-dimensional structure diagram of the gas mixing component and the diversion part provided by the embodiment of the present utility model.

[0028] Figure 3 It is a three-dimensional structure diagram of the gas equalizing component provided by the embodiment of the present utility model.

[0029] Figure 4 It is a sectional structure diagram of the gas equalizing component provided by the embodiment of the present utility model.

[0030] Figure 5 It is a three-dimensional structure diagram of the gas mixing device provided by the embodiment of the present utility model.

[0031] Explanation of the signs in the drawings:

[0032] 1. First branch; 2. First branch; 3. Pressure switch; 4. Mixing chamber; 41. Input end; 42. First buffer zone; 43. Diversion part; 44. Gas mixing component; 441. First through hole; 45. Second buffer zone; 46. Gas equalizing component; 461. Second through hole; 47. Storage zone; 48. Output end; 5. Vacuum gauge; 6. Output pipeline; 7. Diaphragm valve. Detailed Embodiments

[0033] Next, the technical solutions in the embodiments of the present utility model will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are part of the embodiments of the present utility model, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts shall fall within the protection scope of the present utility model.

[0034] It should be understood that when used in this specification and the appended claims, the terms "comprising" and "including" indicate the presence of the described features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or their combinations.

[0035] It should also be understood that the terms used in this specification of the present utility model are only for the purpose of describing specific embodiments and are not intended to limit the present utility model. As used in this specification of the present utility model and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms.

[0036] It should be further understood that the term "and / or" used in this specification of the present utility model and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0037] Please refer to Figures 1 to 3 , an embodiment of the present utility model provides a gas mixing device, including: a mixing chamber 4, a gas mixing member 44, and a gas homogenizing member 46;

[0038] One end of the mixing chamber 4 is provided with an input end 41 for receiving a plurality of gases, and the other end of the gas homogenizing member 46 is provided with an output end 48 for outputting the mixed plurality of gases;

[0039] The gas mixing member 44 is disposed in the mixing chamber 4, and a first buffer zone 42 is spaced between one side of the gas mixing member 44 and the input end 41;

[0040] The gas homogenizing member 46 is disposed in the mixing chamber 4, a second buffer zone 45 is spaced between one side of the gas homogenizing member 46 and the other side of the gas mixing member 44, and a storage zone 47 is spaced between the other side of the gas homogenizing member 46 and the output end 48;

[0041] Wherein, the spatial shape of the first buffer zone 42 is arranged in a conical divergence along the gas flow direction, and the spatial shape of the storage zone 47 is arranged in a conical convergence along the gas flow direction.

[0042] In this embodiment, the mixing chamber 4 is in the shape of a can as a whole. After various gases are input into the mixing chamber 4 through the input end 41, they pass through the first buffer zone 42, the gas mixing component 44, the second buffer zone 45, the gas equalizing component 46, and the storage zone 47 in sequence, and then the mixing can be completed. The mixed gas after uniform mixing can be output through the output end 48 to supply the required uniform gas to the process chamber of the semiconductor processing equipment.

[0043] During the mixing process of this embodiment, the gas will not form vortices and dead zones in the conical spaces of the first buffer zone 42 and the storage zone 47, which can play a certain role in preventing the gas from flowing back. In addition, after the gas is mixed by the gas mixing component 44, it first reaches the second buffer zone 45 for slow flow, and then enters the gas equalizing component 46 for gas equalization, so that the mixed gas flowing into the storage zone 47 is more uniform. Finally, it can be output from the output end 48 to the process chamber of the semiconductor processing equipment to ensure the effect of the semiconductor coating process.

[0044] In this embodiment, the conical spaces of the first buffer zone 42 and the storage zone 47 can be conical, polyhedral pyramidal, etc. This embodiment preferably adopts a conical shape. When various gases enter the conical first buffer zone 42, the gases can be better dispersed, the flow rate of the gases after entering the first buffer zone 42 can be reduced, and the phenomenon of vortices and dead zones caused by the too fast flow rate of the gases hitting the gas mixing component 44 can be avoided. When various gases are mixed and reach the conical storage zone 47, the conical space of the storage zone 47 can gather the mixed gases at the output end 48, also avoiding the phenomenon of vortices and dead zones, and improving the gas output efficiency.

[0045] Next, the gas mixing component 44 of the present application will be specifically introduced.

[0046] In one embodiment, a diversion part 43 is provided on one side of the gas mixing component 44. The diversion part 43 is located in the first buffer zone 42 and is used to diffuse the gas in the first buffer zone 42 from the middle to the radial outer side; the gas mixing component 44 has a plurality of first through holes 441 extending from one side to the other side, and the plurality of first through holes 441 are distributed in the circumferential direction on the radial outer side of the diversion part 43.

[0047] In this embodiment, the diversion part 43 can be integrally formed on one side of the gas mixing component 44, or can be fixedly installed on one side of the gas mixing component 44 in a split manner. This embodiment preferably integrally forms the diversion part 43 on one side of the gas mixing component 44; the diversion part 43 located in the first buffer zone 42 can divert the gas entering the first buffer zone 42, so that the gas can better enter the first through holes 441 of the gas mixing component 44 after passing through the diversion part 43, facilitating gas mixing.

[0048] Specifically, based on the diversion principle, the gas will flow along the protruding end of the diversion part 43 to the end where the diversion part 43 is connected to the gas mixing part 44. Therefore, a plurality of first through holes 441 are distributed along the circumferential direction on the radial outer side of the diversion part 43. In this way, after the gas is diverted, it can directly reach the first through holes 441 and smoothly enter the first through holes 441. Thus, through the effective guidance of the diversion part 43 on the gas, the phenomenon of gas backflow can be effectively reduced.

[0049] Specifically, the shape of the gas mixing part 44 can be cylindrical, and the shape of the diversion part 43 can be a conical frustum shape. The diversion part 43 is arranged at the central axis position of the gas mixing part 44, and the top of the diversion part 43 corresponds to the input end 41; the gas enters the first buffer area 42 from the input end 41 and impacts the top of the diversion part 43 for flow buffering, and is diverted along the conical outer wall of the diversion part 43, so as to reach the first through holes 441 on one side of the gas mixing part 44.

[0050] In an embodiment, at least one circle of a plurality of first through holes 441 is radially distributed around the central axis of the gas mixing part 44, and each circle of first through holes 441 is inclined and centrifugally arranged around the central axis of the gas mixing part 44.

[0051] In this embodiment, a plurality of first through holes 441 can form a circumferential circle around the central axis of the gas mixing part 44. A plurality of first through holes 441 can form a circumferential circle, or can form a plurality of circumferential circles distributed circle by circle along the radial direction. The central axis of each circumferential circle is coaxial with the central axis of the gas mixing part 44. The number of first through holes 441, the through hole shape, and the circle diameter of each circumferential circle can be set according to actual needs. Each circumferential circle of first through holes 441 has an inclination angle and an inclination direction, which can make the gas deflect around the central axis of the gas mixing part 44 in the clockwise or counterclockwise direction when passing through each circumferential circle. For example, in Figure 2 the example, a plurality of first through holes 441 of a circumferential circle are shown. When looking from the upper side to the lower side of the gas mixing part 44, the gas will deflect around the central axis of the gas mixing part 44 in the counterclockwise direction during the process of flowing from the upper side to the lower side of the gas mixing part 44 through the plurality of first through holes 441. It should be understood that the inclined centrifugal directions of the first through holes 441 of a plurality of circumferential circles can be the same or opposite.

[0052] In this embodiment, after the first through holes 441 are inclined and centrifugally arranged, various gases can be thrown to the edge of the second buffer area 45 due to the centrifugal force when passing through the gas mixing part 44, so as to further enhance the fluid mixing effect; in some other embodiments, when the inclined centrifugal directions of the first through holes 441 of two adjacent circumferential circles are opposite, the gas can be guided to deflect in opposite directions to further enhance the gas mixing effect.

[0053] In an embodiment, the first through holes 441 are arranged to increase along the gas flow direction.

[0054] In this embodiment, the diameter of the circle formed by the corresponding orifice of the first through-hole 441 on one side of the gas mixing member 44 is smaller than the diameter of the circle formed by the corresponding orifice of the first through-hole 441 on the other side of the gas mixing member 44. That is, the gas enters the first through-hole 441 from the orifice with a relatively small diameter and flows out from the orifice with a relatively large diameter. This change in caliber can prevent gas backflow.

[0055] In this embodiment, in the manner that the first through-hole 441 increases along the gas flow direction, the first through-hole 441 can be divided into two segments with different apertures, that is, in a stepped shape. It is also possible to increase the aperture of the first through-hole 441 uniformly in proportion along the gas flow direction, that is, in a conical shape. In this embodiment, the stepped manner is preferably adopted, which is easier to process.

[0056] The gas equalizing member 46 of the present application will be specifically introduced below.

[0057] In one embodiment, the gas equalizing member 46 has a plurality of second through-holes 461 extending from one side to the other side thereof, and the plurality of second through-holes 461 are distributed along the circumferential direction; the diameter of the circle formed by the plurality of second through-holes 461 is smaller than the diameter of the circle formed by the plurality of first through-holes 441.

[0058] In this embodiment, the shape of the gas equalizing member 46 can be cylindrical, and the plurality of second through-holes 461 can form a circumferential circle around the central axis of the gas equalizing member 46. The plurality of second through-holes 461 can form a circumferential circle, or can form a plurality of circumferential circles distributed in a radial direction one by one. The central axis of each circumferential circle is coaxial with the central axis of the gas equalizing member 46. The number of the first through-holes 441, the through-hole shape, and the diameter of the circumferential circle of each circumferential circle can be set according to actual needs. For example, in Figure 3 the example, a plurality of second through-holes 461 of two circumferential circles are shown. The number of the second through-holes 461 in the outer circle can be twice the number of the second through-holes 461 in the inner circle, and the through-hole shapes are all circular.

[0059] In this embodiment, the diameter of the circle formed by one or more circumferential circles formed by the plurality of second through-holes 461 is smaller than the diameter of any circumferential circle formed by the plurality of first through-holes 441. This is to gather the gas that is thrown to the edge of the second buffer area 45 by the centrifugal force in the first through-hole 441 in the direction towards the middle of the gas equalizing member 46, and uniformly flow into the storage area 47 through the second through-holes 461 of the gas equalizing member 46, so that the gas can be more fully mixed.

[0060] In one embodiment, the plurality of second through-holes 461 are arranged parallel to the central axis of the gas equalizing member 46.

[0061] In this embodiment, when the gas enters the second buffer area 45 from the first through hole 441, the airflow disturbance is relatively large. By arranging the second through hole 461 parallel to the central axis, the gas can maintain a uniform forward movement after entering the second through hole 461 of the air distribution member 46, so that the gas is more uniformly mixed and enters the storage area 47.

[0062] As shown in combination with Figure 4 In one embodiment, the aperture of the second through hole 461 increases along the gas flow direction.

[0063] In this embodiment, the aperture design of the second through hole 461 can be the same as that of the first through hole 441, that is, the diameter of the circle formed by the corresponding orifices on one side of the air distribution member 46 of the second through hole 461 is smaller than the diameter of the circle formed by the corresponding orifices on the other side of the air distribution member 46 of the second through hole 461. That is, the gas enters the second through hole 461 from the orifice with a relatively small diameter and flows out from the orifice with a relatively large diameter. This change in aperture can prevent gas backflow.

[0064] In this embodiment, in the way that the aperture of the second through hole 461 increases along the gas flow direction, the second through hole 461 can be divided into two segments with different apertures, that is, in a stepped shape. It is also possible to increase the aperture of the second through hole 461 uniformly in proportion along the gas flow direction, that is, in a conical shape. In this embodiment, the stepped shape is preferably adopted, which is easier to process.

[0065] Thus, based on the aperture design of the first through hole 441 and the second through hole 461, the effect of preventing gas backflow is further improved.

[0066] Please refer to Figure 5 As shown, in one embodiment, the gas mixing device further includes: at least two gas source branches, a pressure switch 3, an output pipeline 6, a diaphragm valve 7 and a vacuum gauge 5;

[0067] The two gas source branches are used to provide at least two kinds of gases;

[0068] The pressure switch 3 is connected between all the gas source branches and the input end 41 of the mixing chamber body 4;

[0069] One end of the output pipeline 6 is connected to the output end 48 of the mixing chamber body 4;

[0070] The diaphragm valve 7 is connected to the other end of the output pipeline 6;

[0071] The vacuum gauge 5 is arranged on the output pipeline 6 and is used to detect and monitor the gas pressure in the storage area 47.

[0072] In this embodiment, the two gas source branches may include a first branch 21 for connecting to a first gas source and a second branch for connecting to a second gas source. The first branch 21 and the second branch converge and are connected to a pressure switch 3. By opening and closing the pressure switch 3, these two gases can be controlled to simultaneously pass through the input end 41 of the mixing chamber 4 and enter the first buffer zone 42; and then continue to pass through the gas mixing member 44, the second buffer zone 45, the gas equalizing member 46 and the storage area 47 to complete mixing, and then be transported to the diaphragm valve 7 through the output pipe 6 from the output end 48. By opening and closing the diaphragm valve 7, the mixed gas can be controlled to enter the process chamber of the semiconductor processing equipment.

[0073] An embodiment of the present invention further provides a semiconductor processing equipment, including the gas mixing device as described above; further including a process chamber and an input pipeline; the input pipeline is coupled between the gas mixing device (i.e., coupled to the diaphragm valve 7) and the process chamber, and is configured to supply the mixed multiple gases output by the gas mixing device to the process chamber.

[0074] As described above, the above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should all be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A gas mixing device, characterized in that: include: A mixing chamber body, one end of which is provided with an input end for receiving multiple gases, and the other end of which is provided with an output end for outputting the mixed multiple gases; A gas mixing element, which is arranged in the mixing chamber and has a first buffer zone spaced from the input end on one side; A gas homogenizing member is disposed in the mixing chamber, and is separated from the other side of the gas homogenizing member by a second buffer zone on one side and separated from the output end by a storage zone on the other side; The spatial shape of the first buffer zone is arranged to diverge in a cone shape along the gas flow direction, and the spatial shape of the storage zone is arranged to converge in a cone shape along the gas flow direction.

2. The gas mixing device according to claim 1, characterized in that: A flow guide is provided on one side of the gas mixing element, the flow guide is located in the first buffer zone, and the flow guide is used to diffuse the gas in the first buffer zone from the middle to the radial outside; The gas mixing element has a plurality of first through holes extending from one side thereof to the other side thereof, and the plurality of first through holes are distributed along the circumferential direction on the radial outer side of the air guide portion.

3. The gas mixing device according to claim 2, characterized in that: The guide portion is in the shape of a conical truncated cone, and the top of the guide portion corresponds to the input end.

4. The gas mixing device according to claim 2, characterized in that: The gas leveling member has a plurality of second through holes extending from one side to the other side thereof, and the plurality of second through holes are distributed along the circumferential direction; The circular diameter formed by the plurality of second through holes is smaller than the circular diameter formed by the plurality of first through holes.

5. The gas mixing device according to claim 4, characterized in that: The apertures of the first through holes and / or the second through holes are arranged to increase along the gas flow direction.

6. The gas mixing device according to claim 2, characterized in that: The plurality of first through holes are radially distributed in at least one circle around the central axis of the gas mixing element, and each circle of first through holes is obliquely and centrifugally arranged around the central axis of the gas mixing element.

7. The gas mixing device according to claim 6, characterized in that: The inclined centrifugal directions of the multiple circles of first through holes are the same or opposite.

8. The gas mixing device according to claim 4, characterized in that: The plurality of first through holes are radially distributed in at least one circle around the central axis of the gas leveling member, and the plurality of second through holes are arranged in parallel along the central axis of the gas leveling member.

9. The gas mixing device according to claim 1, characterized in that: Also includes: At least two gas source branches, for providing at least two gases; A pressure switch connected between all gas source branches and the input end of the mixing chamber; An output pipeline, one end of which is connected to the output end of the mixing chamber; a diaphragm valve connected to the other end of the output pipeline; A vacuum gauge is arranged on the output pipeline and is used to detect and monitor the gas pressure in the storage area.

10. A semiconductor processing equipment, characterized in that: The gas mixing device comprises the gas mixing device according to any one of claims 1 to 9; and further comprises: Process chamber; The input pipeline is coupled between the gas mixing device and the process chamber and is configured to provide the mixed gases outputted from the gas mixing device to the process chamber.

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