Spraying system capable of reducing use amount of photoresist

Abstract

The utility model belongs to the technical field of preparation of electronic devices, and particularly relates to a spraying system capable of reducing photoresist consumption, which comprises a main pipe, a back washing pipe, an edge removing pipe and an RRC (Radio Resource Control) pipe are connected onto the main pipe, a back washing pipe spray head is arranged at the end part of the back washing pipe, an edge removing pipe spray head is arranged at the end part of the edge removing pipe, and the RRC pipe is connected with the back washing pipe spray head. An RRC pipe nozzle is arranged at the end part of the RRC pipe, the back washing pipe nozzle is positioned below a wafer on which photoresist is to be sprayed, the edge removing pipe nozzle is positioned at the edge of the wafer, and the RRC pipe nozzle is positioned above the wafer, so that under the condition that the etching effect is ensured, the consumption of the photoresist is reduced, the spraying effect is improved, and the production cost is reduced.

Description

Technical Field

[0001] The utility model belongs to the technical field of electronic device preparation, and particularly relates to a spraying system for reducing the amount of photoresist used. Background Art

[0002] The photoresist spraying pipeline involves multiple components, including a photoresist container, a pre-storage container, a filter, a proximal container, a pump, and a nozzle.

[0003] The design of the photoresist spraying pipeline aims to ensure that the photoresist can be effectively sprayed onto the wafer, while considering the service life of the photoresist and the uniformity of spraying. The pipeline design includes the following key parts:

[0004] Photoresist container: Placed in a temperature-controlled chamber, the container is designed with an air inlet and a glue outlet. The air inlet is used to introduce gas to help press the photoresist in the photoresist container out of the glue outlet.

[0005] The first pipeline: Connects the glue outlet of the photoresist container, the pre-storage container, the filter, the proximal container, the pump, and the nozzle. This series of components ensures that the photoresist can be smoothly transported from the container to the nozzle.

[0006] The second pipeline: Wrapped outside the first pipeline, it is used to introduce a heating medium to heat the first pipeline. This design helps to improve the service life of the photoresist without affecting its spraying effect.

[0007] Nozzle: Responsible for atomizing the photoresist into droplets and splashing them onto the surface of the substrate or wafer. The hot plate heating helps to evaporate the photoresist solvent, so that the useful resin remains on the surface of the substrate or wafer, forming a relatively uniform photoresist coverage.

[0008] Such a design not only improves the use efficiency of the photoresist, but also ensures that the surface of the wafer can obtain a uniform photoresist coverage, which is crucial for the key steps in the semiconductor manufacturing process.

[0009] The price of the photoresist is relatively expensive. Directly spraying the photoresist on the wafer requires a large amount of photoresist, resulting in high costs. Summary of the Utility Model

[0010] The technical problem to be solved by the utility model is to provide a spraying system for reducing the amount of photoresist used, which can reduce the amount of photoresist used, improve the spraying effect, and reduce the production cost while ensuring the etching effect.

[0011] The utility model provides a spraying system for reducing the amount of photoresist used, which includes a main pipe. A backwashing pipe, a trimming pipe, and an RRC pipe are connected to the main pipe. A backwashing pipe nozzle is provided at the end of the backwashing pipe, a trimming pipe nozzle is provided at the end of the trimming pipe, and an RRC pipe nozzle is provided at the end of the RRC pipe. The backwashing pipe nozzle is located below the wafer to be sprayed with photoresist, the trimming pipe nozzle is located at the edge of the wafer, and the RRC pipe nozzle is located above the wafer.

[0012] Optionally, the wafer is arranged on a rotating support, and the wafer can rotate under the rotation of the rotating support.

[0013] Optionally, the number of the backwashing pipes is 2, the number of the backwashing pipe nozzles is 2, and the distance between the backwashing pipe nozzle and the center of the wafer is 1 / 3 - 2 / 3 of the radius of the wafer.

[0014] Optionally, the RRC pipe nozzle is arranged at the center of the wafer.

[0015] Optionally, the trimming pipe is connected to the main pipe, and the RRC pipe is connected to the main pipe or the trimming pipe.

[0016] Optionally, it further includes an edge exposure device arranged at the edge of the wafer.

[0017] Optionally, it further includes a spraying liquid receiving member arranged below the wafer.

[0018] Optionally, a main pipe valve is arranged on the main pipe, a backwashing pipe valve is arranged on the backwashing pipe, an RRC pipe valve is arranged on the RRC pipe (3), and a trimming pipe valve is arranged on the trimming pipe.

[0019] Optionally, the pipe diameter of the RRC pipe is 1 / 3 - 1 / 2 of the pipe diameter of the main pipe.

[0020] Optionally, the pipe diameter of the trimming pipe is 1 / 3 - 2 / 3 of the pipe diameter of the main pipe.

[0021] The beneficial effect of the utility model is that the traditional spin coating equipment only includes a spin coating pipeline. Due to the lack of pipelines, the RRC spraying process cannot be realized. The present invention adds an RRC pipe to the existing device. The RRC pipe is a pipeline for the RRC process, which sprays a solvent before photoresist spin coating to increase the wettability of the wafer surface and can reduce the amount of photoresist used. The present invention also includes a backwashing pipe and a trimming pipe. The backwashing pipe mainly refers to using a solvent to wash the back of the wafer, and the trimming pipe mainly refers to removing the photoresist at the edge of the wafer.

[0022] When in use, the utility model controls the RRC pipe, the edge-removing pipe and the back-washing pipe to open. At this time, the edge-removing pipe is not used to remove the photoresist on the edge of the wafer, but to clean the front side of the wafer. The RRC pipe, the edge-removing pipe and the back-washing pipe can realize the all-round cleaning of the front and back sides of the wafer, keeping the wafer with a high cleanliness. At the same time, a solvent is sprayed on the front side of the wafer to preserve the wettability of the wafer surface, and then photoresist is sprayed. After spraying, the edge-removing pipe is opened to remove the photoresist on the edge of the wafer. At this time, the back side of the wafer can be cleaned through the back-washing pipe, or it can not be cleaned.

[0023] The utility model sets the RRC pipe, the edge-removing pipe and the back-washing pipe around the wafer, which can realize various processes of the wafer, ensure the purity of the wafer and the spraying of the photoresist. The structure is compact and can effectively reduce the usage amount of the photoresist. For the old photoresist spraying equipment, the transformation of the utility model is relatively simple, and only by adding pipelines can various different processes be realized. Description of the Drawings

[0024] Figure 1 It is a schematic structural diagram of the utility model.

[0025] In the figure, 1 is the main pipe, 11 is the main pipe valve, 2 is the back-washing pipe, 21 is the back-washing pipe valve, 22 is the back-washing pipe nozzle, 3 is the RRC pipe, 31 is the RRC pipe valve, 32 is the RRC pipe nozzle, 4 is the edge-removing pipe, 41 is the edge-removing pipe valve, 42 is the edge-removing pipe nozzle, 5 is the rotating support, and 6 is the wafer. Detailed Embodiment

[0026] As Figure 1 shown, a spraying system for reducing the usage amount of photoresist includes a main pipe 1. The main pipe 1 is connected with a back-washing pipe 2, an edge-removing pipe 4 and an RRC pipe 3. The end of the back-washing pipe 2 is provided with a back-washing pipe nozzle 22. The end of the edge-removing pipe 4 is provided with an edge-removing pipe nozzle 42. The end of the RRC pipe 3 is provided with an RRC pipe nozzle 32. The back-washing pipe nozzle 22 is located below the wafer 6 to be sprayed with photoresist. The edge-removing pipe nozzle 42 is located at the edge of the wafer 6. The RRC pipe nozzle 32 is located above the wafer 6.

[0027] The solutions in the back-washing pipe 2, the edge-removing pipe 4 and the RRC pipe 3 of the utility model are all the same solution. The back-washing pipe 2, the edge-removing pipe 4 and the RRC pipe 3 are all connected to the main pipe 1. The edge-removing pipe 4 and the RRC pipe 3 are to face the front side of the wafer. Therefore, the edge-removing pipe 4 and the RRC pipe 3 can be directly connected to the main pipe 1, or the edge-removing pipe 4 can be connected to the RRC pipe 3 (as Figure 1As shown), or the RRC tube 3 is connected to the edge removal tube 4, the purpose of connecting the edge removal tube 4 and the RRC tube 3 to the main tube 1 is also achieved. The utility model arranges the RRC tube 3 above the wafer 6, the backwash tube 2 is located below, and the edge removal tube 4 is located above the wafer 6. Through the action of the three tubes, the wafer is cleaned, edge removed, and moistened, and the amount of photoresist used is reduced. The structure is simple and a variety of process effects can be achieved.

[0028] The wafer 6 of the utility model is arranged on the rotating support 5, and the wafer 6 can rotate under the rotation of the rotating support 5. The main purpose of rotating the wafer 6 is to allow the solution to be evenly sprayed on various areas of the wafer during cleaning and spraying.

[0029] There are two backwash pipes 2, two backwash pipe nozzles 22, and the distance between the backwash pipe nozzle 22 and the center of the wafer 6 is 1 / 3- / 2 / 3 of the radius of the wafer 6. Generally speaking, the distance between the backwash pipe nozzle 22 and the center of the wafer 6 is 1 / 2 of the radius of the wafer 6. At this time, a smaller solution dosage can be used to achieve the maximum cleaning effect.

[0030] The RRC tube nozzle is arranged at the center of the wafer 6. Under the action of rotation, the solution sprayed onto the wafer 6 by the RRC tube nozzle 32 will be evenly coated on the surface of the wafer 6 under the action of centrifugal force, thereby achieving the best wetting effect with the minimum amount of solution.

[0031] The trimmed pipe 4 is connected to the main pipe 1, and the RRC pipe 3 is connected to the main pipe 1 or the trimmed pipe 4. This design can reduce the number of pipelines and reduce the complexity of the structure.

[0032] It also includes an edge exposure device arranged at the edge of the wafer 6. When the edge removal tube 4 is not enough to remove the photoresist at the edge of the wafer 6, an additional edge exposure device is arranged to facilitate the smooth removal of the photoresist, or to reduce the time for removing the photoresist at the edge of the wafer 6 and improve the removal efficiency.

[0033] The spraying liquid receiving part is also provided below the wafer 6. During the spraying process or after the spraying is finished, the spraying liquid receiving part can receive excess solution from the backwashing pipe 2, the edge removal pipe 4, the RRC pipe 3 and other pipes.

[0034] The main pipe 1 is provided with a main pipe valve 11, the backwash pipe 2 is provided with a backwash pipe valve 21, the RRC pipe 3 is provided with an RRC pipe valve 31, and the trim pipe 4 is provided with a trim pipe valve 41. The valves provided on the pipelines can open or close the corresponding pipelines separately to control whether to open the corresponding processes.

[0035] The pipe diameter of the RRC pipe 3 is 1 / 3 - 1 / 2 of the pipe diameter of the main pipe 1. The pipe diameter of the edge-removing pipe 4 is 1 / 3 - 2 / 3 of the pipe diameter of the main pipe 1. When the RRC pipe 3 and the edge-removing pipe 4 spray the solution, they can have a higher spraying pressure relative to the main pipe 1, improve the spraying strength of the solution, and improve the cleaning effect.

[0036] Those of ordinary skill in the art should understand that the discussion of any of the above embodiments is exemplary only and is not intended to imply that the scope of the present application is limited to these examples; within the concept of the present application, the technical features in the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations in different aspects of one or more embodiments of the present application as described above, which are not provided in detail for the sake of brevity.

[0037] One or more embodiments of the present application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the present application. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of one or more embodiments of the present application shall be included within the scope of protection of the present application.

Claims

1. A spraying system for reducing the amount of photoresist, characterized in that: The invention comprises a main pipe (1), to which a backwash pipe (2), a trimming pipe (4) and an RRC pipe (3) are connected; a backwash pipe nozzle (22) is arranged at the end of the backwash pipe (2); a trimming pipe nozzle (42) is arranged at the end of the trimming pipe (4); and an RRC pipe nozzle (32) is arranged at the end of the RRC pipe (3); the backwash pipe nozzle (22) is located below a wafer (6) to be sprayed with photoresist; the trimming pipe nozzle (42) is located at the edge of the wafer (6); and the RRC pipe nozzle (32) is located above the wafer (6).

2. The spray coating system for reducing the amount of photoresist as claimed in claim 1, characterized in that: The wafer (6) is arranged on a rotating support (5), and the wafer (6) can rotate under the rotation of the rotating support (5).

3. The spray coating system for reducing the amount of photoresist as claimed in claim 1, characterized in that: The number of the backwash pipes (2) is 2, the number of the backwash pipe nozzles (22) is 2, and the distance between the backwash pipe nozzles (22) and the center of the wafer (6) is 1 / 3- / 2 / 3 of the radius of the wafer (6).

4. The spray coating system for reducing the amount of photoresist as claimed in claim 1, characterized in that: The RRC tube nozzle (32) is arranged at the center of the wafer (6).

5. The spray coating system for reducing the amount of photoresist as claimed in claim 1, characterized in that: The trimmed pipe (4) is connected to the main pipe (1), and the RRC pipe (3) is connected to the main pipe (1) or the trimmed pipe (4).

6. The spray coating system for reducing the amount of photoresist as claimed in claim 1, characterized in that: Also included is an edge exposure device arranged at the edge of the wafer (6).

7. The spray coating system for reducing the amount of photoresist as claimed in claim 1, characterized in that: It also includes a spraying liquid receiving part arranged below the wafer (6).

8. The spray coating system for reducing the amount of photoresist as claimed in claim 1, characterized in that: The main pipe (1) is provided with a main pipe valve (11), the back wash pipe (2) is provided with a back wash pipe valve (21), the RRC pipe (3) is provided with an RRC pipe valve (31), and the trim pipe (4) is provided with a trim pipe valve (41).

9. The spray coating system for reducing the amount of photoresist as claimed in claim 1, characterized in that: The diameter of the RRC pipe (3) is 1 / 3 to 1 / 2 of the diameter of the main pipe (1).

10. The spray coating system for reducing the amount of photoresist as claimed in claim 1, characterized in that: The diameter of the trimmed pipe (4) is 1 / 3 to 2 / 3 of the diameter of the main pipe (1).

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