Wafer processing device and wafer growing equipment

Abstract

The utility model discloses a wafer processing device and wafer growing equipment, and belongs to the technical field of semiconductor processing devices.The wafer processing device comprises a reaction cavity, a bearing assembly and a heating assembly, the reaction cavity comprises a body and a reaction space located in the body, the bearing assembly and the heating assembly are both connected with the body, the bearing assembly comprises a base, and the base is provided with a first surface; and the heating assembly is used for bearing the wafer and comprises a heating piece, the heating piece is provided with a second surface, and the second surface is opposite to the first surface and used for conveying heat to the base. In the application, the base can rotate relative to the body along the first axis perpendicular to the first surface, and the heating piece can rotate relative to the body along the second axis perpendicular to the second surface, so that the base can obtain better temperature uniformity and air field uniformity at the same time.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor processing devices, and specifically relates to a wafer processing device and a wafer growth equipment. Background Art

[0002] At present, when a wafer is processed by a wafer processing device, a heating element is usually set to heat the wafer. The uniformity of the heat output of the heat source in the heating element directly determines the uniformity of heating of the wafer or the base supporting the wafer. In order to reduce the influence of the heat source on the wafer or the base, it is usually necessary to rotate the base supporting the wafer so that the wafer can obtain better temperature uniformity. However, in the case of a slow rotation speed, the temperature distribution of the base will still be affected by the heat source and show poor circumferential uniformity. In the case of a fast rotation speed, the rotation of the base will form an air barrier or cyclone on the surface of the base, affecting the uniformity of the reaction of the process gas on the wafer surface, and thus having a greater impact on the quality of the wafer. Utility Model Content

[0003] Purpose of the utility model: The present application develops a wafer processing device and a wafer growth device, aiming to solve the technical problem in the prior art that it is difficult for a wafer or a base supporting a wafer to simultaneously obtain better temperature uniformity and gas field uniformity.

[0004] Technical solution: In a first aspect, an embodiment of the present application provides a wafer processing device, comprising:

[0005] A reaction chamber, the reaction chamber comprising a body and a reaction space located in the body;

[0006] A carrying assembly, the carrying assembly comprising a base disposed in the body and a support member connected to the base and at least partially extending out of the body, the base having a first surface facing the reaction space, the first surface being provided with a receiving groove for carrying a wafer;

[0007] A heating assembly, the heating assembly comprising a plate-shaped heating element disposed in the body, a retaining element connected to the heating element and at least partially extending out of the body, and a heating coil disposed on one side of the heating element, the heating coil being fixed relative to the body, the heating element having a second surface on a side away from the heating coil, the second surface facing the reaction space and being opposite to and spaced from the first surface, and when the heating assembly is in operation, the second surface transfers heat to the first surface;

[0008] Wherein, the base and the heating element are both arranged in the main body in a manner capable of rotating relative to the main body. When the wafer processing device is in a working state, the base rotates along a first axis perpendicular to the first surface, and the heating element rotates along a second axis perpendicular to the second surface.

[0009] In some embodiments, the first axis coincides with the second axis.

[0010] In some embodiments, when the wafer processing device is in a working state, the rotational speed of the base is a first rotational speed R 1 , and the rotational speed of the heating element is a second rotational speed R 2 , satisfying: R 1 < R 2 .

[0011] In some embodiments, it further satisfies:

[0012] 1 / ≤ R 1 ≤ 8r / min.

[0013] In some embodiments, it further satisfies:

[0014] 15 / < R 2 ≤ 30 / .

[0015] In some embodiments, the second surface is a flat surface.

[0016] In some embodiments, when the wafer processing device is in a working state, the rotational direction of the base is opposite to the rotational direction of the heating element.

[0017] In some embodiments, a first heat insulation member is provided between the main body and the base. The first heat insulation member has a first groove, and the base is arranged in the first groove;

[0018] Wherein, the first heat insulation member has a first through hole, and the first through hole penetrates the first heat insulation member along a first direction and communicates with the first groove; the support member is inserted through the first through hole.

[0019] In some embodiments, a second heat insulation member is provided between the main body and the heating element. The second heat insulation member has a second groove, and along the first direction, the opening of the second groove faces the base, and the heating assembly is arranged in the second groove;

[0020] Wherein, the second heat insulation member has a second through hole, and the second through hole penetrates the second heat insulation member along the first direction and communicates with the second groove; the holding member is inserted through the second through hole.

[0021] Second aspect, an embodiment of the present application further provides a wafer growth device, including the wafer processing device described in any one of the first aspects.

[0022] Beneficial effects: Compared with the prior art, an embodiment of the present application provides a wafer processing device, including a reaction chamber, a carrier assembly, and a heating assembly. The reaction chamber includes a body and a reaction space located in the body. Both the carrier assembly and the heating assembly are connected to the body. The carrier assembly includes a base, and the base has a first surface for carrying a wafer. The heating assembly includes a heating element, and the heating element has a second surface opposite to the first surface for delivering heat to the base to heat the wafer. In the present application, the base can rotate relative to the body along a first axis perpendicular to the first surface, and the heating element can rotate relative to the body along a second axis perpendicular to the second surface, so that both the heating element and the base can rotate independently. Since the rotation of the heating element can adjust the temperature uniformity of the base, and at the same time this rotational movement basically does not affect the gas flow field at the surface of the base, and the uniformity of the gas field at the surface of the base can be achieved by the rotational movement of the base. Furthermore, the base can obtain better temperature uniformity and gas field uniformity at the same time to improve the wafer out-of-film quality. Description of the Drawings

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0024] Figure 1 It is a schematic structural diagram of the wafer processing device provided by the embodiment of the present application;

[0025] Reference numerals: 100, carrier assembly; 110, base; 111, first axis; 112, first surface; 113, receiving groove; 120, support member; 130, first heat insulation member; 131, first groove; 132, first through hole; 200, heating assembly; 201, second axis; 202, second surface; 210, heating element; 220, heating coil; 230, holding member; 240, second heat insulation member; 241, second groove; 242, second through hole; 600, reaction chamber; 610, body; 611, first carrier member; 612, third groove; 613, second carrier member; 614, fourth groove; 620, reaction space; X, first direction. Detailed Embodiments

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0027] An embodiment of the present application provides a wafer processing device. Please refer to Figure 1 , which includes a reaction chamber 600, a carrier assembly 100, and a heating assembly 200. The reaction chamber 600 includes a main body 610 and a reaction space 620 located in the main body 610. Both the carrier assembly 100 and the heating assembly 200 are connected to the main body 610. The carrier assembly 100 includes a base 110, and the base 110 has a first surface 112 for carrying a wafer. The heating assembly 200 includes a heating element 210, and the heating element 210 has a second surface 202, and the second surface 202 is disposed opposite to the first surface 112. When the heating assembly 200 operates, the second surface 202 conveys heat to the base 110 to heat the base 110 or the wafer carried on the base 110. In the present application, the heating element 210 can rotate relative to the main body 610 along a second axis 201 perpendicular to the second surface 202, so that any heat dissipation point on the second surface 202 can rotate on a circumference centered on the second axis 201. Correspondingly, the corresponding positions on the opposite first surface 112 can periodically receive heat from these heat dissipation points. Generally speaking, it can make the heat distribution tend to be balanced in the corresponding circumferential direction of the first surface 112, and the shorter the period, the better the temperature uniformity in the corresponding circumferential direction of the first surface 112. In addition, the base 110 can rotate relative to the main body 610 along a first axis 111 perpendicular to the first surface 112, so that the dynamic airflow environment at each point on the circumference centered on the first axis 111 of the first surface 112 tends to be consistent, thereby improving the uniformity of the gas field on the first surface 112. The base 110 and the heating element 210 can independently rotate relative to the main body, which can enable the wafer processing device to break the opposition between the temperature uniformity and the gas field uniformity on the first surface 112 through the independent rotation of the base 110 and the heating element 210, and then make it possible to achieve better temperature uniformity and better gas field uniformity at the first surface 112 simultaneously.

[0028] The following will introduce in detail a wafer processing device provided in an embodiment of the present application. To facilitate the representation of the relative position relationship between components or parts, a first direction X is introduced in a wafer processing device provided in an embodiment of the present application.

[0029] In some embodiments, please refer to Figure 1, The reaction chamber 600 is used to fixedly carry the component 100 and the heating component 200, and at the same time provide a space for gas flow and wafer processing for the reaction gas and the wafer. Specifically, the reaction chamber 600 includes a body 610 and a reaction space 620; wherein, the body 610 includes a first carrier 611 and a second carrier 613. The first carrier 611 has a third groove 612, and the second carrier 613 has a fourth groove 614. Along the first direction X, the openings of the third groove 612 and the fourth groove 614 are oppositely arranged. At least a part of the carrying component 100 is arranged in the third groove 612, and at least a part of the heating component 200 is arranged in the fourth groove 614. Along the first direction X, the first carrier 611 and the second carrier 613 are opposite and spaced apart, so that the carrying component 100 and the heating component 200 are opposite and spaced apart along the first direction X; the spaced space between the first carrier 611 and the second carrier 613 forms the reaction space 620 to provide a gas flow and wafer processing space for the reaction gas and the wafer.

[0030] In some embodiments, please refer to Figure 1 , the carrying component 100 is used to support and drive the wafer to rotate; specifically, the carrying component 100 includes a base 110 and a support 120. Among them, the base 110 is used to provide a carrying environment. The base 110 is connected to the support 120, and the support 120 is used to drive the wafer to rotate through the base 110 to achieve the support and rotation effect of the carrying component 100 on the wafer. Specifically, for the convenience of connecting an external power device, the support 120 passes through the first carrier 611 and at least partially extends out of the body 610. The base 110 has a first axis 111 extending along the first direction X, and the first axis 111 coincides with the rotation axis of the support 120, so that when the support 120 rotates around its rotation axis, it drives the base 110 to rotate along the first axis 111.

[0031] In some embodiments, a first heat-insulating member 130 is provided between the body 610 and the base 110. The first heat-insulating member 130 is used to insulate the base 110. The first heat-insulating member 130 has a first groove 131, and the base 110 is arranged in the first groove 131 and does not contact the bottom and the wall of the first groove 131, so that the base 110 rotates in the first groove 131 driven by the support 120. Further, the first heat-insulating member 130 also has a first through-hole 132. Along the first direction X, the first through-hole 132 penetrates the first heat-insulating member 130 to communicate with the first groove 131, and the support 120 is arranged in the first through-hole 132 and connected to the base 110 to drive the base 110 to rotate.

[0032] In some embodiments, please refer to Figure 1, the base 110 has a first surface 112 for supporting a wafer. The heating assembly 200 includes at least one plate-shaped heating element 210 disposed in the reaction chamber. In a specific implementation, the first surface 112 is perpendicular to the first direction X, and the first surface 112 and the heating element 210 of the heating assembly 200 are disposed on opposite sides of the reaction space 620, that is, the first surface 112 is located on the side of the base 110 away from the support 120 to support the wafer facing the heating element 210.

[0033] In some embodiments, refer to Figure 1 , the base 110 further has a receiving groove 113 for receiving and supporting the wafer. In a specific implementation, the receiving groove 113 is provided on the first surface 112 to support the wafer facing the heating assembly 200. Since the wafer has a certain thickness, directly setting the wafer on the first surface 112 will cause the first surface 112 to bulge due to the presence of the wafer, and the flow direction of the reaction gas will be disturbed when flowing over the bulge, resulting in a turbulent flow phenomenon. The present application provides the receiving groove 113 on the first surface 112 to effectively reduce the generation of the turbulent flow phenomenon.

[0034] In some embodiments, refer to Figure 1 , the heating assembly 200 includes a heating element 210, a holding member 230, a heating coil 220, and a second heat insulation member 240. The heating element 210 is plate-shaped, and the heating element 210 is connected to the holding member 230. The holding member 230 is used to support and drive the heating element 210 to rotate to achieve rotational heating of the wafer. When the heating assembly 200 is operating, the heating element 210 conveys heat to the wafer on the base 110. Specifically, for convenient connection to an external power device, the holding member 230 passes through the second carrier 613 and at least partially extends out of the main body 610. The heating element 210 has a second axis 201 extending along the first direction X, and the second axis 201 coincides with the rotation axis of the holding member 230 and the first axis 111, so that when the holding member 230 rotates about its rotation axis, it drives the heating element 210 to rotate along the second axis 201. Among them, the heating coil 220 is used to heat the heating element 210 based on the principle of induction heating. The heating coil 220 is located on the side of the heating element 210 away from the base 110, and the heating coil 220 is fixed relative to the main body 610.

[0035] In some embodiments, a second heat-insulating member 240 is provided between the body 610 and the heating element 210. The second heat-insulating member 240 is used to insulate the heating element 210. The second heat-insulating member 240 has a second groove 241. The heating element 210 is disposed in the second groove 241 and does not contact the bottom and side walls of the second groove 241, so that the heating element 210 rotates in the second groove 241 under the drive of the holding member 230. Further, the second heat-insulating member 240 also has a second through-hole 242. Along the first direction X, the second through-hole 242 penetrates the second heat-insulating member 240 and communicates with the second groove 241. The holding member 230 is disposed through the second through-hole 242 and connected to the heating element 210 to drive the heating element 210 to rotate.

[0036] In some embodiments, referring to Figure 1 , the heating element 210 has a second surface 202. In a specific implementation, the second surface 202 is perpendicular to the first direction X, and the second surface 202 is disposed opposite to the first surface 112 and faces the reaction space 620, that is, the second surface 202 is located on the side of the heating element 210 away from the heating coil 220 and the holding member 230, so that when the heating assembly 200 is working, the second surface 202 transfers heat to the first surface 112.

[0037] In some embodiments, referring to Figure 1 , in the present application, the second surface 202 is a flat surface, and the flat surface has a small influence on the flow of the reaction gas. Since the first surface 112 needs to place a wafer, grooves and other structures will be provided on the first surface 112, and these structures will generate depressions or protrusions on the first surface 112, which will disturb the reaction gas when the reaction gas flows through the first surface 112. Especially when the susceptor 110 rotates at a high speed, the disturbance to the reaction gas will become more obvious. Therefore, when the wafer processing apparatus of the embodiment of the present application is in a working state, the rotation speed of the susceptor 110 is the first rotation speed R 1 , the rotation speed of the heating element 210 is the second rotation speed R 2 , satisfying: R 1 < R 2So that the base 110 can rotate at a relatively low speed. When adjusting the consistency of the air flow environment at each circumferential point of the first surface 112, it is possible to avoid generating a large disturbance to the air flow flowing on the first surface 112, maintain the overall orderly flow state of the air flow, and ensure the uniformity of the air field on the first surface 112. At the same time, the heating element 210 can rotate at a relatively high speed to achieve the circumferential uniformity of the heating of the first surface 112. And since the second surface 202 is a flat surface, its high-speed rotation state has little interference with the air flow. At the same time, since there is a certain distance between the second surface 202 and the first surface 112, the air flow disturbance generated by it on the air flow will not directly affect the air flow state at the first surface 112. This enables better temperature uniformity and better air field uniformity to be achieved simultaneously at the first surface 112.

[0038] In some embodiments, the first rotational speed R 1 further satisfies: 1 / ≤R R ≤8 r / min; the second rotational speed R 2 further satisfies: 15 / <R 2 ≤30 / .

[0039] In some embodiments, in some embodiments, the first rotational speed R 1 can be selected from any value in 1 / , 2 / , 3 / , 4 / , 5 / , 6 / , 7 / , 8 / or any value within the combined range of any two values.

[0040] In some embodiments, the second rotational speed R 2 can be selected from any value in 16 / , 17 / , 18 / , 19 / , 20 / , 21 / , 22 / , 23 / , 24 / , 25 / , 26 / , 27 / , 28 / , 29 / , 30 / or any value within the combined range of any two values. In other alternative embodiments, a higher second rotational speed can also be set, but such embodiments may bring the risk of increasing particulate pollution.

[0041] In some embodiments, when the wafer processing apparatus is in a working state, the rotation direction of the base 110 is opposite to the rotation direction of the heating element 210 to increase the relative rotational speed of the base 110 and the heating element 210.

[0042] Understandably, a wafer processing apparatus provided by an embodiment of the present application includes a reaction chamber 600, a carrier assembly 100, and a heating assembly 200. The reaction chamber 600 includes a body 610 and a reaction space 620 located in the body 610. Both the carrier assembly 100 and the heating assembly 200 are connected to the body 610. The carrier assembly 100 includes a base 110, and the base 110 has a first surface 112 for carrying a wafer. The heating assembly 200 includes a heating element 210, and the heating element 210 has a second surface 202. The second surface 202 is disposed opposite to the first surface 112. When the heating assembly 200 operates, the second surface 202 delivers heat to the base 110 to heat the base 110 or the wafer carried on the base 110. In the present application, the heating element 210 can rotate relative to the body 610 along a second axis 201 perpendicular to the second surface 202, so that any heat dissipation point on the second surface 202 can rotate on a circumference centered on the second axis 201. Correspondingly, the corresponding position of the first surface 112 can periodically receive heat from these heat dissipation points. Overall, it can make the heat distribution in the corresponding circumferential direction of the first surface 112 tend to be balanced, and the shorter the period, the better the temperature uniformity in the corresponding circumferential direction of the first surface 112. In addition, the base 110 can rotate relative to the body 610 along a first axis 111 perpendicular to the first surface 112, so that the dynamic airflow environments at various points on the first surface 112 on a circumference centered on the first axis 111 tend to be consistent, thereby improving the uniformity of the gas field on the first surface 112. The base 110 and the heating element 210 can independently rotate relative to the body, which can enable the wafer processing apparatus to break the opposition between the temperature uniformity and the gas field uniformity on the first surface 112 through the independent rotation of the base 110 and the heating element 210, and thus make it possible to achieve better temperature uniformity and better gas field uniformity simultaneously at the first surface 112.

[0043] Correspondingly, an embodiment of the present application further provides a wafer growth device, including the wafer processing apparatus provided by the embodiment of the present application.

[0044] The above has introduced in detail a wafer processing apparatus and a wafer growth device provided by an embodiment of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A wafer processing device, characterized in that: include: A reaction chamber (600), the reaction chamber (600) comprising a body (610) and a reaction space (620) located in the body (610); A carrying assembly (100), the carrying assembly (100) comprising a base (110) disposed in the body (610) and a support member (120) connected to the base (110) and at least partially extending out of the body (610), the base (110) having a first surface (112) facing the reaction space (620), the first surface (112) being provided with a receiving groove (113) for carrying a wafer; A heating component (200), the heating component (200) comprising a plate-shaped heating element (210) arranged in the body (610), a retaining element (230) connected to the heating element (210) and at least partially extending out of the body (610), and a heating coil (220) arranged on one side of the heating element (210), the heating coil (220) being fixed relative to the body (610), the heating element (210) having a second surface (202) on a side away from the heating coil (220), the second surface (202) facing the reaction space (620) and being opposite to and spaced from the first surface (112), and when the heating component (200) is in operation, the second surface (202) transfers heat to the first surface (112); Wherein, the base (110) and the heating element (210) are both arranged in the body (610) in a manner capable of rotating relative to the body (610); when the wafer processing device is in working state, the base (110) rotates along a first axis (111) perpendicular to the first surface (112), and the heating element (210) rotates along a second axis (201) perpendicular to the second surface (202).

2. The wafer processing device according to claim 1, characterized in that: The first axis (111) coincides with the second axis (201).

3. The wafer processing device according to claim 1, characterized in that: When the wafer processing device is in working state, the rotation speed of the base (110) is a first rotation speed R1, and the rotation speed of the heating element (210) is a second rotation speed R2, satisfying: R1 <R2。 4. The wafer processing device according to claim 3, characterized in that: Further satisfying: 1r / min≤R1≤8r / min.

5. The wafer processing device according to claim 3, characterized in that: Further satisfying: 15r / min <R2≤30r / min。 6. The wafer processing device according to claim 3, characterized in that: The second surface (202) is a flat surface.

7. The wafer processing device according to claim 1, characterized in that: When the wafer processing device is in an operating state, the rotation direction of the base (110) is opposite to the rotation direction of the heating element (210).

8. The wafer processing device according to claim 1, characterized in that: A first heat-insulating member (130) is provided between the body (610) and the base (110), the first heat-insulating member (130) having a first groove (131), and the base (110) is arranged in the first groove (131); The first thermal insulation component (130) has a first through hole (132), the first through hole (132) penetrates the first thermal insulation component (130) along a first direction (X) and is connected to the first groove (131); the support component (120) is inserted into the first through hole (132).

9. The wafer processing device according to claim 1, characterized in that: A second heat-insulating component (240) is provided between the body (610) and the heating component (210), the second heat-insulating component (240) having a second groove (241), along the first direction (X), the opening of the second groove (241) faces the base (110), and the heating component (200) is arranged in the second groove (241); The second thermal insulation component (240) has a second through hole (242), the second through hole (242) penetrates the second thermal insulation component (240) along the first direction (X) and is connected to the second groove (241); the retaining component (230) is inserted into the second through hole (242).

10. A wafer growth device, characterized in that: A wafer processing device comprising any one of claims 1-9.

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