Wafer surface treatment device
By designing a wafer surface treatment device for semiconductor manufacturing, the problem of wafer surface defects during back thinning cleaning is solved, and an efficient processing process is achieved, which improves product yield and production efficiency.
Patent Information
- Application Number
- CN202421814945.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-29
- Publication Date
- 2025-06-13
- Estimated Expiration
- 2034-07-29
AI Technical Summary
During the thinning and cleaning process of semiconductor manufacturing, defects are prone to appear on the wafer surface, such as circular pits, which lead to black dot marking problems on the crystal back, affecting product quality and yield.
A wafer surface treatment device is designed, including a chemical liquid supply device, a processing device and a liquid discharge device. By regulating the position of the carrier table and setting the cleaning chamber to be located above the first and second etching chambers, the first and second etching chambers are located below the cleaning chamber to avoid chemical liquid splashing and acid mist falling.
It effectively avoids defects in the wafer surface during thinning and cleaning, improves product yield, reduces the replacement cost of the processing device, and improves production efficiency.
Smart Images
Figure CN222980461U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to a wafer surface treatment device. Background Art
[0002] In the production process of the semiconductor manufacturing back-end process BGBM (Backside Grinding and Backside Metal, backside thinning and backside metallization), after the FS (Front side) process is completed, backside grinding is required, and the wafer surface treatment device is used for thinning and cleaning, and then backside metal sputtering is performed. However, after the backside thinning and cleaning are completed, defects are easily detected by AOI (Automated Optical Inspection), and the defects will cause the problem of black dot marks on the backside of the wafer after backside metal sputtering. And when no abnormality is found in the inspection machine hardware, for the defect points, slicing analysis is carried out and it is found that the defects appear as circular pits, as Figure 1 shown, which is the SEM image of the pits on the wafer surface. And the pits are confirmed to be caused by chemicals falling on the backside of the wafer during the thinning and cleaning process, and the pits are caused by silicon etching, and appear as black dots under the microscope due to the color difference problem.
[0003] Currently, the wafer surface treatment device used for treating the backside of the wafer, such as Figure 2As shown in the figure, it is a schematic structural diagram of a wafer surface treatment device in the prior art, including a chemical liquid supply device 01, a first etching liquid supply unit 011, a first liquid supply part 0111, a first liquid storage part 0112, a first liquid supply pipe 0113, a second etching liquid supply unit 012, a second liquid supply part 0121, a second liquid storage part 0122, a second liquid supply pipe 0123, a cleaning liquid supply unit 013, a third liquid supply part 0131, a third liquid storage part 0132, a third liquid supply pipe 0133, a first etching liquid input pipe 014, a second etching liquid input pipe 015, a cleaning liquid input pipe 016, a processing device 02, a first etching chamber 021, a second etching chamber 022, a cleaning chamber 023, a carrier table 024, an adjusting part 025, a liquid discharge device 03, a first etching liquid discharge mechanism 031, a first etching liquid discharge pipe 0311, a first liquid discharge part 0311a, a second liquid discharge part 0311b, a second etching liquid discharge mechanism 032, a second etching liquid discharge pipe 0321, a third liquid discharge part 0321a, a fourth liquid discharge part 0321b, a cleaning liquid discharge mechanism 033, a cleaning liquid discharge pipe 0331, a fifth liquid discharge part 0331a, a sixth liquid discharge part 0331b, a spraying unit 04, a first spray head 041, a second spray head 042 and a third spray head 043. Among them, the processing chambers of the wafer processing unit are arranged vertically from top to bottom as the first etching chamber, the cleaning chamber and the second etching chamber in sequence. That is, the first etching chamber for etching the wafer is located above the cleaning chamber. In the first etching chamber above, the wafer is first thinned. Due to the high-speed rotation of the wafer during the processing, there will surely be splashed chemical liquid distributed in the cavity space. And although there is a liquid discharge device that can suck away the splashed chemical liquid, there will still be chemical liquid particles remaining in the air. In the subsequent process of cleaning the wafer, the chemical liquid remaining from the thinning process will fall on the wafer surface and form pits on the wafer surface, affecting the wafer quality and reducing the yield.
[0004] In view of this, there is an urgent need for a wafer processing device that can avoid defects on the back surface of the wafer during the back thinning and cleaning process of the wafer. Summary of the Invention
[0005] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a wafer surface treatment device to solve the problem that defects are easily generated on the back surface of the wafer during the back thinning and cleaning process of the wafer in the prior art.
[0006] To achieve the above purpose and other related purposes, the present invention provides a wafer surface treatment device, including:
[0007] A chemical liquid supply device, at least including a first etching liquid supply unit, a second etching liquid supply unit and a cleaning liquid supply unit;
[0008] A processing device, at least including a cleaning chamber, a first etching chamber, a second etching chamber and a carrier stage. The second etching chamber and the first etching chamber are both located below the cleaning chamber. The first etching solution supply unit is used to supply a first etching solution to the surface of a wafer in the first etching chamber. The second etching solution supply unit is used to supply a second etching solution to the surface of the wafer in the second etching chamber. The cleaning solution supply unit is used to supply a cleaning solution to the surface of the wafer in the cleaning chamber. By adjusting the position of the carrier stage, the wafer placed on the carrier stage can be controlled to perform different processing processes in the first etching chamber, the second etching chamber and the cleaning chamber respectively;
[0009] A liquid discharging device, at least including a first etching solution discharging mechanism communicated with the first etching chamber, a second etching solution discharging mechanism communicated with the second etching chamber, and a cleaning solution discharging mechanism communicated with the cleaning chamber.
[0010] Optionally, the first etching chamber is located below the cleaning chamber, and the second etching chamber is located below the first etching chamber.
[0011] Optionally, a spraying unit is further provided in the wafer surface processing device. The spraying unit includes a first spray head communicated with the first etching solution supply unit, a second spray head communicated with the second etching solution supply unit, and a third spray head communicated with the etching solution supply unit. The first etching solution supply unit sprays the first etching solution onto the surface of the wafer through the first spray head. The second etching solution supply unit sprays the second etching solution onto the surface of the wafer through the second spray head. The cleaning solution supply unit sprays the cleaning solution onto the surface of the wafer through the third spray head. And the first etching solution supply unit is communicated with the first spray head through a first etching solution input pipe. The second etching solution supply unit is communicated with the second spray head through a second etching solution input pipe. The cleaning solution supply unit is communicated with the third spray head through a cleaning solution input pipe.
[0012] Optionally, the first etching solution supply unit includes a first liquid supply part, a first liquid storage part and a first liquid supply pipe connecting the first liquid supply part and the first liquid storage part. The first liquid storage part is communicated with the first spray head through the first etching solution input pipe. The second etching solution supply unit includes a second liquid supply part, a second liquid storage part and a second liquid supply pipe connecting the second liquid supply part and the second liquid storage part. The second liquid storage part is communicated with the second spray head through the second etching solution input pipe. The cleaning solution supply unit includes a third liquid supply part, a third liquid storage part and a third liquid supply pipe connecting the third liquid supply part and the third liquid storage part. The third liquid storage part is communicated with the third spray head through the cleaning solution input pipe. And the first liquid supply pipe and the third liquid supply pipe are arranged in a cross manner.
[0013] Optionally, the cleaning liquid includes hydrofluoric acid; the first etching liquid includes Spin-D etching liquid; the second etching liquid includes Spin-E etching liquid.
[0014] Optionally, the first etching liquid discharging mechanism includes a first etching liquid discharge pipe communicating with the first etching chamber and a first extraction part for regulating the pressure in the first etching liquid discharge pipe; the second etching liquid discharging mechanism includes a second etching liquid discharge pipe communicating with the second etching chamber and a second extraction part for regulating the pressure in the second etching liquid discharge pipe; the cleaning liquid discharging mechanism includes a cleaning liquid discharge pipe communicating with the cleaning chamber and a third extraction part for regulating the pressure in the cleaning liquid discharge pipe.
[0015] Optionally, the pressure range in the first etching liquid discharge pipe is -320 Pa to -280 Pa.
[0016] Optionally, the first etching liquid discharge pipe includes a first liquid discharge part and a second liquid discharge part that are connected; the second etching liquid discharge pipe includes a third liquid discharge part and a fourth liquid discharge part that are connected; the cleaning liquid discharge pipe includes a fifth liquid discharge part and a sixth liquid discharge part that are connected; the second liquid discharge part and the sixth liquid discharge part are arranged crosswise.
[0017] Optionally, an adjusting part is further provided on the carrier, and the adjusting part is used to regulate the position of the carrier so as to control the wafer located on the carrier to perform different processing techniques in the cleaning chamber, the first etching chamber, and the second etching chamber respectively.
[0018] Optionally, the bottom of the first etching chamber is inclined, and a first hole is opened at the bottom of the first etching chamber, and the size of the carrier is not larger than the size of the first hole; the bottom of the second etching chamber is inclined, and a second hole is opened at the bottom of the second etching chamber, and the size of the carrier is not larger than the size of the second hole; the bottom of the cleaning chamber is inclined, and a third hole is opened at the bottom of the cleaning chamber, and the size of the carrier is not larger than the size of the third hole.
[0019] As described above, the wafer surface treatment device of the present utility model has the following beneficial effects: Compared with the traditional wafer surface treatment device, by cleaning and replacing the first liquid supply pipe and the third liquid supply pipe, and the first etching solution discharge pipeline and the cleaning solution discharge pipeline, the positions of the cleaning chamber and the first etching chamber in the treatment device can be replaced, so that the first etching chamber and the second etching chamber are located below the cleaning chamber, avoiding defects on the wafer surface, reducing the replacement cost of the wafer surface treatment device, and improving production efficiency; By setting the cleaning chamber above the first etching chamber and the second etching chamber, and adjusting the pressure in the first etching solution discharge pipe to match the position of the first etching chamber, during the process of treating the wafer surface, the turbulent flow is reduced, and it is avoided that the acid mist formed by the first etching solution or the second etching solution during the wafer surface treatment drops onto the wafer surface to cause defects, improving the product yield. Description of the Drawings
[0020] Figure 1 SEM image showing the pits generated on the wafer surface in the prior art.
[0021] Figure 2 Schematic structural diagram of a wafer surface treatment device in the prior art.
[0022] Figure 3 Schematic structural diagram of the wafer surface treatment device of the present utility model.
[0023] Description of Component Labels
[0024] 01 Chemical liquid supply device
[0025] 011 First etching solution supply unit
[0026] 0111 First liquid supply part
[0027] 0112 First liquid storage part
[0028] 0113 First liquid supply pipe
[0029] 012 Second etching solution supply unit
[0030] 0121 Second liquid supply part
[0031] 0122 Second liquid storage part
[0032] 0123 Second liquid supply pipe
[0033] 013 Cleaning solution supply unit
[0034] 0131 Third liquid supply part
[0035] 0132 Third Liquid Storage Section
[0036] 0133 Third Liquid Supply Pipe
[0037] 014 First Etchant Input Pipe
[0038] 015 Second Etchant Input Pipe
[0039] 016 Cleaning Liquid Input Pipe
[0040] 02 Processing Device
[0041] 021 First Etching Chamber
[0042] 022 Second Etching Chamber
[0043] 023 Cleaning Chamber
[0044] 024 Carrier Stage
[0045] 025 Adjusting Section
[0046] 03 Drainage Device
[0047] 031 First Etchant Discharge Mechanism
[0048] 0311 First Etchant Discharge Pipe
[0049] 0311a First Drainage Section
[0050] 0311b Second Drainage Section
[0051] 032 Second Etchant Discharge Mechanism
[0052] 0321 Second Etchant Discharge Pipe
[0053] 0321a Third Drainage Section
[0054] 0321b Fourth Drainage Section
[0055] 033 Cleaning Liquid Discharge Mechanism
[0056] 0331 Cleaning Liquid Discharge Pipe
[0057] 0331a Fifth Drainage Section
[0058] 0331b Sixth Drainage Section
[0059] 04 Spraying Unit
[0060] 041 First Sprayer
[0061] 042 Second Sprayer
[0062] 043 Third Sprayer
[0063] 1 Chemical liquid supply device
[0064] 11 First etching liquid supply unit
[0065] 111 First liquid supply part
[0066] 112 First liquid storage part
[0067] 113 First liquid supply pipe
[0068] 12 Second etching liquid supply unit
[0069] 121 Second liquid supply part
[0070] 122 Second liquid storage part
[0071] 123 Second liquid supply pipe
[0072] 13 Cleaning liquid supply unit
[0073] 131 Third liquid supply part
[0074] 132 Third liquid storage part
[0075] 133 Third liquid supply pipe
[0076] 14 First etching liquid input pipe
[0077] 15 Second etching liquid input pipe
[0078] 16 Cleaning liquid input pipe
[0079] 2 Processing device
[0080] 21 First etching chamber
[0081] 211 First hole
[0082] 22 Second etching chamber
[0083] 221 Second hole
[0084] 23 Cleaning chamber
[0085] 231 Third hole
[0086] 24 Carrying stage
[0087] 25 Adjusting part
[0088] 3 Drainage device
[0089] 31 First etching liquid discharge mechanism
[0090] 311 First etching liquid discharge pipe
[0091] 311a First drainage part
[0092] 311b Second liquid discharge part
[0093] 32 Second etching solution discharge mechanism
[0094] 321 Second etching solution discharge pipe
[0095] 321a Third liquid discharge part
[0096] 321b Fourth liquid discharge part
[0097] 33 Cleaning solution discharge mechanism
[0098] 331 Cleaning solution discharge pipe
[0099] 331a Fifth liquid discharge part
[0100] 331b Sixth liquid discharge part
[0101] 4 Spraying unit
[0102] 41 First spray head
[0103] 42 Second spray head
[0104] 43 Third spray head Specific implementation mode
[0105] The following specific embodiments illustrate the implementation mode of the present utility model. Those skilled in the art can easily understand other advantages and effects of the present utility model from the content disclosed in this specification.
[0106] Please refer to Figures 1 to 3 . It should be noted that the structures, ratios, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those skilled in the art to understand and read, and are not used to limit the limiting conditions under which the present utility model can be implemented. Therefore, they do not have technical essential significance. Any modification of the structure, change of the proportional relationship or adjustment of the size, without affecting the effects that the present utility model can produce and the purposes that can be achieved, should still fall within the scope that can be covered by the technical content disclosed in the present utility model. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" cited in this specification are only for the convenience of clear narration, and are not used to limit the scope under which the present utility model can be implemented. The change or adjustment of their relative relationships, without substantial change of the technical content, should also be regarded as the scope under which the present utility model can be implemented.
[0107] Embodiment 1
[0108] The present utility model provides a wafer surface treatment device, such as Figure 3As shown in the figure, it is a schematic structural diagram of the wafer surface treatment device, including: a chemical liquid supply device 1, a processing device 2 and a liquid discharge device 3. Among them, the chemical liquid supply device 1 at least includes a first etching liquid supply unit 11, a second etching liquid supply unit 12 and a cleaning liquid supply unit 13; the processing device 2 at least includes a cleaning chamber 23, a first etching chamber 21, a second etching chamber 22 and a carrier 24. The second etching chamber 22 and the first etching chamber 21 are both located below the cleaning chamber 23. The first etching liquid supply unit 11 is used to supply the first etching liquid to the surface of the wafer in the first etching chamber 21. The second etching liquid supply unit 12 is used to supply the second etching liquid to the surface of the wafer in the second etching chamber 22. The cleaning liquid supply unit 13 is used to supply the cleaning liquid to the surface of the wafer in the cleaning chamber 23. By adjusting the position of the carrier 24, the wafer placed on the carrier 24 can be controlled to perform different processing processes in the first etching chamber 21, the second etching chamber 22 and the cleaning chamber 23 respectively; the liquid discharge device 3 at least includes a first etching liquid discharge mechanism 31 communicated with the first etching chamber 21, a second etching liquid discharge mechanism 32 communicated with the second etching chamber 22 and a cleaning liquid discharge mechanism 33 communicated with the cleaning chamber 23.
[0109] As an example, the first etching chamber 21 is located below the cleaning chamber 23, and the second etching chamber 22 is located below the first etching chamber 21.
[0110] As an example, a spraying unit 4 is further provided in the wafer surface treatment device. The spraying unit 4 includes a first spray head 41 communicated with the first etching liquid supply unit 11, a second spray head 42 communicated with the second etching liquid supply unit 12 and a third spray head 43 communicated with the cleaning liquid supply unit 13. The first etching liquid supply unit 11 sprays the first etching liquid onto the surface of the wafer through the first spray head 41. The second etching liquid supply unit 12 sprays the second etching liquid onto the surface of the wafer through the second spray head 42. The cleaning liquid supply unit 13 sprays the cleaning liquid onto the surface of the wafer through the third spray head 43. And the first etching liquid supply unit 11 is communicated with the first spray head 41 through a first etching liquid input pipe 14; the second etching liquid supply unit 12 is communicated with the second spray head 42 through a second etching liquid input pipe 15; the cleaning liquid supply unit 13 is communicated with the third spray head 43 through a cleaning liquid input pipe 16.
[0111] As an example, the first etching solution supply unit 11 includes a first liquid supply portion 111, a first liquid storage portion 112, and a first liquid supply pipe 113 connecting the first liquid supply portion 111 and the first liquid storage portion 112. The first liquid storage portion 112 is connected to the first spray head 41 through the first etching solution input pipe 14; the second etching solution supply unit 12 includes a second liquid supply portion 121, a second liquid storage portion 122, and a second liquid supply pipe 123 connecting the second liquid supply portion 121 and the second liquid storage portion 122. The second liquid storage portion 122 is connected to the second spray head 42 through the second etching solution input pipe 15; the cleaning solution supply unit 13 includes a third liquid supply portion 131, a third liquid storage portion 132, and a third liquid supply pipe 133 connecting the third liquid supply portion 131 and the third liquid storage portion 132. The third liquid storage portion 132 is connected to the third spray head 43 through the cleaning solution input pipe 16, and the first liquid supply pipe 113 and the third liquid supply pipe 133 are arranged in a crossed manner. It should be noted that the first liquid supply pipe 113 and the third liquid supply pipe 133 are only arranged in a crossed manner in terms of visual effect, and the first liquid supply pipe 113 and the third liquid supply pipe 133 do not penetrate each other.
[0112] Specifically, the third liquid supply portion 131, the first liquid supply portion 111, and the second liquid supply portion 121 are sequentially spaced apart in the horizontal direction; the first liquid storage portion 112, the third liquid storage portion 132, and the second liquid storage portion 122 are sequentially spaced apart in the horizontal direction. It should be noted that the arrangement positions of the third liquid supply portion 131, the first liquid supply portion 111, and the second liquid supply portion 121, and the arrangement positions of the first liquid storage portion 112, the third liquid storage portion 132, and the second liquid storage portion 122 can also be selected according to actual situations, and are not limited to the above arrangement methods.
[0113] Specifically, the first etching solution in the first liquid supply portion 111 is transmitted to the first liquid storage portion 112 through the first liquid supply pipe 113, the second etching solution in the second liquid supply portion 121 is transmitted to the second liquid storage portion 122 through the second liquid supply pipe 123, and the cleaning solution in the third liquid supply portion 131 is transmitted to the third liquid storage portion 132 through the third liquid supply pipe 133.
[0114] Specifically, the first etching solution in the first liquid storage portion 112 is transmitted to the first spray head 41 through the first etching solution input pipe 14, the second etching solution in the second liquid storage portion 122 is transmitted to the second spray head 42 through the second etching solution input pipe 15, and the cleaning solution in the third liquid storage portion 132 is transmitted to the third spray head 43 through the cleaning solution input pipe 16.
[0115] As an example, a control unit (not shown) is further provided in the wafer surface treatment device. The control unit is configured to control the first etching solution to be supplied from the first liquid supply unit 111 to the first liquid storage unit 112 for storage and then transmitted to the first spray head 41 for spraying, control the second etching solution to be supplied from the second liquid supply unit 121 to the second liquid storage unit 122 for storage and then transmitted to the second spray head 42 for spraying, and control the cleaning solution to be supplied from the third liquid supply unit 131 to the third liquid storage unit 132 for storage and then transmitted to the third spray head 43 for spraying.
[0116] As an example, the cleaning solution includes hydrofluoric acid or other suitable chemical liquids; the first etching solution includes Spin-D etching solution or other suitable chemical liquids; the second etching solution includes Spin-E etching solution or other suitable chemical liquids.
[0117] Specifically, the first etching solution is used for etching the surface of the wafer; the second etching solution is used for etching the surface of the wafer; the cleaning solution is used for cleaning the surface of the wafer etched by the first etching solution or the second etching solution to remove the oxide layer.
[0118] Specifically, the wafer can be etched using the first etching solution or the second etching solution according to the actual situation.
[0119] As an example, an adjusting unit 25 is further provided on the carrier stage 24. The adjusting unit 25 is configured to adjust the position of the carrier stage 24 so as to control the wafer located on the carrier stage 24 to perform different processing processes in the cleaning chamber 23, the first etching chamber 21, and the second etching chamber 22 respectively.
[0120] Specifically, the carrier stage 24 is used for carrying the wafer, and the wafer can rotate on the carrier stage 24 during the processing.
[0121] Specifically, the shape of the carrier stage 24 includes an inverted trapezoid or other suitable shapes.
[0122] As an example, the bottom of the first etching chamber 21 is inclined, and a first hole 211 is formed at the bottom of the first etching chamber 21. The size of the carrier stage 24 is not greater than the size of the first hole 211; the bottom of the second etching chamber 22 is inclined, and a second hole 221 is formed at the bottom of the second etching chamber 22. The size of the carrier stage 24 is not greater than the size of the second hole 221; the bottom of the cleaning chamber 23 is inclined, and a third hole 231 is formed at the bottom of the cleaning chamber 23. The size of the carrier stage 24 is not greater than the size of the third hole 231.
[0123] Specifically, by setting the bottoms of the first etching chamber 21, the second etching chamber 22, and the cleaning chamber 23 to be inclined, it is ensured that the chemical liquid splashed during the rotation of the wafer is fully collected.
[0124] Specifically, by setting the size of the carrier table 24 to be not larger than the sizes of the first hole 211, the second hole 221, and the third hole 231, it is ensured that while the carrier table 24 can move up and down in the cleaning chamber 23, the first etching chamber 21, and the second etching chamber 22, the chemical liquid splashed during the rotation of the wafer can be more fully collected.
[0125] As an example, the first etching liquid discharge mechanism 31 includes a first etching liquid discharge pipe 311 communicated with the first etching chamber 21 and a first extraction part (not shown) for regulating the extraction pressure in the first etching liquid discharge pipe 311; the second etching liquid discharge mechanism 32 includes a second etching liquid discharge pipe 321 communicated with the second etching chamber 22 and a second extraction part (not shown) for regulating the extraction pressure in the second etching liquid discharge pipe 321; the cleaning liquid discharge mechanism 33 includes a cleaning liquid discharge pipe 331 communicated with the cleaning chamber 23 and a third extraction part (not shown) for regulating the extraction pressure in the cleaning liquid discharge pipe 331.
[0126] As an example, the first etching liquid discharge pipe 311 includes a first liquid discharge part 311a and a second liquid discharge part 311b which are communicated with each other, the second etching liquid discharge pipe 312 includes a third liquid discharge part 312a and a fourth liquid discharge part 312b which are communicated with each other, the cleaning liquid discharge pipe 313 includes a fifth liquid discharge part 313a and a sixth liquid discharge part 313b which are communicated with each other, and the second liquid discharge part 311b and the sixth liquid discharge part 313b are arranged in a cross manner. It should be noted that the second liquid discharge part 311b and the sixth liquid discharge part 313b are only arranged in a cross manner in terms of visual effect, and the second liquid discharge part 311b and the sixth liquid discharge part 313b do not penetrate each other.
[0127] As an example, the pressure range in the first etching liquid discharge pipe 311 is -320 Pa to -280 Pa. In this embodiment, the pressure in the first etching liquid discharge pipe 311 is -300 Pa.
[0128] Specifically, during the process of debugging and verifying the extraction pressure in the first etching solution discharge pipe 311, when the pressure in the first etching solution discharge pipe 311 is set to -200 Pa, -300 Pa, -400 Pa, and -600 Pa respectively, it is found that when the pressure is near -300 Pa, the number of defects on the surface of the processed wafer is the least. When the pressure is -200 Pa and -600 Pa, it is very easy to form turbulent flow, and pit defects caused by the dropping of the first etching solution appear on the surface of the wafer. Moreover, during the further verification process, when the pressure range in the first etching solution discharge pipe 311 is -320 Pa to -280 Pa, the number of defects on the surface of the processed wafer is less.
[0129] Specifically, by adjusting the pressure in the first etching solution discharge pipe 311 to match the position of the first etching chamber 21, the formation of turbulent flow during the wafer processing is reduced, the influence of acid mist formed due to the failure of timely discharge of the first etching solution on the cleaning process of the wafer is avoided, and the formation of defects on the surface of the wafer is reduced.
[0130] Specifically, when the performance of the wafer surface processing device is satisfied, the pressure in the second etching solution discharge pipe 321 and the pressure in the cleaning solution discharge pipe 331 can be selected according to the actual situation.
[0131] Specifically, compared with the traditional wafer surface processing device, by cleaning and replacing the first liquid supply pipe 113 and the third liquid supply pipe 133, and cleaning and replacing the second drainage part 311b and the sixth drainage part 313b, that is, replacing the first etching solution discharge pipe 311 and the cleaning solution discharge pipe 331, the replacement of the positions of the cleaning chamber 23 and the first etching chamber 21 in the processing device can be completed, so that the first etching chamber 21 and the second etching chamber 22 are located below the cleaning chamber 23, the generation of defects on the surface of the wafer is avoided, the replacement cost of the wafer surface processing device is reduced, and the production efficiency is improved.
[0132] Specifically, the processing procedure of the wafer surface includes the following steps: placing the wafer on the surface of the carrier stage 24, controlling the carrier stage 24 to reach the first etching chamber 21 or the second etching chamber 22 through the adjusting unit 25, spraying the first etching liquid or the second etching liquid onto the wafer surface by the first nozzle 41 or the second nozzle 42 (the wafer rotates on the carrier stage 24 during the spraying process), so as to perform corresponding etching and thinning treatment on the wafer surface. While performing the etching and thinning treatment, the first etching liquid discharging mechanism 31 or the second etching liquid discharging mechanism 32 discharges the first etching liquid or the second etching liquid splashed during the rotation of the wafer through the first etching liquid discharge pipe 311 and the second etching liquid discharge pipe 321. Controlling the wafer after the etching and thinning treatment to reach the cleaning chamber 23 through the adjusting unit 25, and spraying the cleaning liquid onto the wafer surface by the third nozzle 43 to clean the wafer surface. While performing the cleaning, the third etching liquid discharging mechanism 33 discharges the cleaning liquid splashed during the rotation of the wafer through the cleaning liquid discharge pipe 33, so as to complete the processing of the wafer surface.
[0133] Specifically, by arranging the cleaning chamber 23 above the first etching chamber 21 and the second etching chamber 22, during the process of processing the wafer surface, it is avoided that the acid mist formed by the first etching liquid or the second etching liquid during the wafer surface processing drops onto the wafer surface to generate defects, and the product yield is improved.
[0134] The wafer surface processing device of this embodiment, compared with the traditional wafer surface processing device, by cleaning and replacing the first liquid supply pipe 113 and the third liquid supply pipe 133, and cleaning and replacing the first etching liquid discharge pipe 311 and the cleaning liquid discharge pipe 331, the replacement of the positions of the cleaning chamber 23 and the first etching chamber 21 in the processing device can be completed, realizing that the first etching chamber 21 and the second etching chamber 22 are located below the cleaning chamber 23, avoiding defects on the wafer surface, reducing the replacement cost of the wafer surface processing device, and improving the production efficiency; by arranging the cleaning chamber 23 above the first etching chamber 21 and the second etching chamber 22, and by adjusting the pressure in the first etching liquid discharge pipe 311 to match the position of the first etching chamber 21, during the process of processing the wafer surface, the formation of turbulent flow during the wafer processing is reduced, and it is avoided that the acid mist formed by the first etching liquid or the second etching liquid during the wafer surface processing drops onto the wafer surface to generate defects, and the product yield is improved.
[0135] In summary, compared with the traditional wafer surface treatment device, the wafer surface treatment device of the present utility model can complete the replacement of the positions of the cleaning chamber and the first etching chamber in the treatment device by cleaning and replacing the first liquid supply pipe and the third liquid supply pipe, cleaning and replacing the first etching liquid discharge pipe and the cleaning liquid discharge pipe, so that the first etching chamber and the second etching chamber are located below the cleaning chamber, avoiding the generation of defects on the wafer surface, reducing the replacement cost of the wafer surface treatment device, and improving the production efficiency; by setting the cleaning chamber above the first etching chamber and the second etching chamber, and adjusting the pressure in the first etching liquid discharge pipe to match the position of the first etching chamber, during the process of treating the wafer surface, the generation of turbulent flow is reduced, and the acid mist formed by the first etching liquid or the second etching liquid during the wafer surface treatment is prevented from falling onto the wafer surface to generate defects, improving the product yield. Therefore, the present utility model effectively overcomes various shortcomings in the prior art and has high industrial utilization value.
[0136] The above embodiments are only illustrative of the principles and effects of the present utility model and are not intended to limit the present utility model. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present utility model. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present utility model should still be covered by the claims of the present utility model.
Claims
1. A wafer surface processing device, characterized in that: include: The chemical liquid supply device comprises at least a first etching liquid supply unit, a second etching liquid supply unit and a cleaning liquid supply unit; A processing device, comprising at least a cleaning chamber, a first etching chamber, a second etching chamber and a carrying platform, wherein the second etching chamber and the first etching chamber are both located below the cleaning chamber, the first etching liquid supply unit is used to supply a first etching liquid to a surface of a wafer in the first etching chamber, the second etching liquid supply unit is used to supply a second etching liquid to a surface of the wafer in the second etching chamber, and the cleaning liquid supply unit is used to supply a cleaning liquid to a surface of the wafer in the cleaning chamber, and the wafer placed on the carrying platform can be controlled to undergo different processing processes in the first etching chamber, the second etching chamber and the cleaning chamber respectively by adjusting the position of the carrying platform; The liquid discharge device at least includes a first etching liquid discharge mechanism connected to the first etching chamber, a second etching liquid discharge mechanism connected to the second etching chamber, and a cleaning liquid discharge mechanism connected to the cleaning chamber.
2. The wafer surface treatment device according to claim 1, characterized in that: The first etching chamber is located below the cleaning chamber, and the second etching chamber is located below the first etching chamber.
3. The wafer surface treatment device according to claim 1, characterized in that: The wafer surface processing device is also provided with a spraying unit, which includes a first nozzle connected to the first etching liquid supply unit, a second nozzle connected to the second etching liquid supply unit, and a third nozzle connected to the cleaning liquid supply unit. The first etching liquid supply unit sprays the first etching liquid onto the wafer surface through the first nozzle, the second etching liquid supply unit sprays the second etching liquid onto the wafer surface through the second nozzle, and the cleaning liquid supply unit sprays the cleaning liquid onto the wafer surface through the third nozzle, and the first etching liquid supply unit is connected to the first nozzle through a first etching liquid input pipe, the second etching liquid supply unit is connected to the second nozzle through a second etching liquid input pipe, and the cleaning liquid supply unit is connected to the third nozzle through a cleaning liquid input pipe.
4. The wafer surface treatment device according to claim 3, characterized in that: The first etching liquid supply unit includes a first liquid supply part, a first liquid storage part, and a first liquid supply pipe connecting the first liquid supply part and the first liquid storage part, and the first liquid storage part is connected to the first nozzle through the first etching liquid input pipe; the second etching liquid supply unit includes a second liquid supply part, a second liquid storage part, and a second liquid supply pipe connecting the second liquid supply part and the second liquid storage part, and the second liquid storage part is connected to the second nozzle through the second etching liquid input pipe; the cleaning liquid supply unit includes a third liquid supply part, a third liquid storage part, and a third liquid supply pipe connecting the third liquid supply part and the third liquid storage part, and the third liquid storage part is connected to the third nozzle through the cleaning liquid input pipe, and the first liquid supply pipe and the third liquid supply pipe are cross-arranged.
5. The wafer surface processing device according to claim 1, characterized in that: The cleaning solution includes hydrofluoric acid; the first etching solution includes Spin-D etching solution; and the second etching solution includes Spin-E etching solution.
6. The wafer surface processing device according to claim 1, characterized in that: The first etching liquid discharge mechanism includes a first etching liquid discharge pipe connected to the first etching chamber and a first extraction part for regulating the pressure in the first etching liquid discharge pipe; the second etching liquid discharge mechanism includes a second etching liquid discharge pipe connected to the second etching chamber and a second extraction part for regulating the pressure in the second etching liquid discharge pipe; the cleaning liquid discharge mechanism includes a cleaning liquid discharge pipe connected to the cleaning chamber and a third extraction part for regulating the pressure in the cleaning liquid discharge pipe.
7. The wafer surface processing device according to claim 6, characterized in that: The pressure in the first etching liquid discharge pipe ranges from -320Pa to -280Pa.
8. The wafer surface processing device according to claim 6, characterized in that: The first etching liquid discharge pipe includes a first discharge portion and a second discharge portion that are connected to each other, the second etching liquid discharge pipe includes a third discharge portion and a fourth discharge portion that are connected to each other, the cleaning liquid discharge pipe includes a fifth discharge portion and a sixth discharge portion that are connected to each other, and the second discharge portion and the sixth discharge portion are cross-arranged.
9. The wafer surface processing device according to claim 1, characterized in that: The carrier platform is also provided with an adjusting part, which is used to adjust the position of the carrier platform and thereby control the wafer located on the carrier platform to perform different processing processes in the cleaning chamber, the first etching chamber, and the second etching chamber respectively.
10. The wafer surface processing device according to claim 1, characterized in that: The bottom of the first etching chamber is tilted, and a first hole is opened at the bottom of the first etching chamber, and the size of the supporting platform is not larger than the size of the first hole; the bottom of the second etching chamber is tilted, and a second hole is opened at the bottom of the second etching chamber, and the size of the supporting platform is not larger than the size of the second hole; the bottom of the cleaning chamber is tilted, and a third hole is opened at the bottom of the cleaning chamber, and the size of the supporting platform is not larger than the size of the third hole.