Chamber leak rate detection device

Abstract

The utility model relates to the technical field of semiconductor manufacturing, in particular to a chamber leak rate detection device, which is characterized in that a leak rate calibration module is used for acquiring a first leak rate calibration value and a plurality of second leak rate calibration values; the gate valve detection module is used for detecting and generating a state signal of each gate valve; the leakage rate detection module is used for determining a first comparison result of the current oxygen concentration of the first chamber and a first leakage rate calibration value under the condition that each gate valve is closed, and determining a second comparison result of the current oxygen concentration of the first chamber and a target second leakage rate calibration value under the condition that any gate valve is opened; and the alarm module is used for determining leakage conditions of the first chamber and the plurality of second chambers based on the first comparison result and the second comparison result, and generating alarm information, the device can realize real-time monitoring of outer leakage and inner leakage phenomena of the chambers, and ensures chamber safety and process results.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, and particularly relates to a chamber leak rate detection device. Background Art

[0002] In the process of semiconductor chemical vapor deposition, the semiconductor process equipment chambers usually include: a PM chamber (Process Module Chamber) with process functions, an LL chamber (Load Lock Chamber) with transfer and cooling functions, and a TM chamber (Transfer Module Chamber) with transfer functions. In the process of production, the oxygen concentration in the chamber affects the safety of the chamber and the process results. Therefore, it is necessary to ensure the vacuum condition of the chamber, and there are particularly high requirements for the airtightness of the chamber. The airtightness is a performance characterizing the ability of the vacuum system to prevent gas penetration. Gas penetration includes external leakage and internal leakage. External leakage refers to the gas penetration between the TM chamber and the outside world, and internal leakage refers to the gas penetration between the TM chamber and the PM chamber.

[0003] The airtightness of the chamber can be calibrated by "leak rate". The smaller the leak rate, the better the sealing performance. In the traditional process, the leak rate test is only carried out after the chamber is maintained, or the shutdown test is carried out only after the process has an abnormality to troubleshoot the fault. It is impossible to monitor the external leakage and internal leakage of the chamber in real time for 24 hours. Summary of the Utility Model

[0004] To solve the above problems of the prior art, the utility model discloses a chamber leak rate detection device, which is applicable to semiconductor process equipment. The semiconductor process equipment includes a first chamber and a plurality of second chambers; each second chamber is connected to the first chamber through a corresponding valve, and the second chambers are independent of each other; the chamber leak rate detection device includes a leak rate calibration module, a valve detection module, a leak rate detection module and an alarm module, wherein:

[0005] The leak rate calibration module is used to obtain a first leak rate calibration value and a plurality of second leak rate calibration values;

[0006] The valve detection module is electrically connected to each valve, and is used to detect and generate a state signal of each valve, and send the state signal to the leak rate detection module;

[0007] The leak rate detection module is electrically connected to the leak rate calibration module and the valve detection module respectively, and is used to determine the first comparison result between the current oxygen concentration in the first chamber and the first leak rate calibration value when it is determined that all valves are closed based on the status signals of the valves; and to determine the second comparison result between the current oxygen concentration in the first chamber and the target second leak rate calibration value when it is determined that any one of the valves is open based on the status signals of the valves; the target second leak rate calibration value is the second leak rate value corresponding to the target second chamber connected to the open valve.

[0008] The alarm module is electrically connected to the leak rate detection module, and is used to determine the leakage conditions of the first chamber and multiple second chambers based on the first comparison result and the second comparison result, and generate an alarm message.

[0009] Furthermore, it also includes a leak valve, and the leak valve is connected to the first chamber; the leak valve is used to change the air pressure value in the first chamber.

[0010] Furthermore, the leak rate calibration module includes a leak valve control unit, a pressure acquisition unit, a leak rate calculation unit and a leak rate calibration unit:

[0011] The leak valve control unit is electrically connected to the leak valve and the pressure acquisition unit, and the leak valve control unit is used to control the opening degree of the leak valve and generate a leak valve opening degree signal to send to the pressure acquisition unit;

[0012] The pressure acquisition unit is used to respond to the leak valve opening degree signal and collect the first air pressure change amount in the first chamber when all valves are closed.

[0013] The leak rate calculation unit is electrically connected to the pressure acquisition unit, and is used to determine the first current leak rate value of the first chamber based on the first air pressure change amount; the leak valve control unit is used to adjust the opening degree of the leak valve until the first current leak rate value is equal to the preset leak rate value when the first current leak rate value is not equal to the preset leak rate value;

[0014] The leak rate calibration unit is used to use the first current leak rate value as the first leak rate calibration value.

[0015] Furthermore, the leak valve control unit is also used for:

[0016] When it is determined that the first current leak rate value is greater than the preset leak rate value, reduce the opening degree of the leak valve until the first current leak rate value is equal to the preset leak rate value;

[0017] When it is determined that the first current leak rate value is less than the preset leak rate value, increase the opening degree of the leak valve until the first current leak rate value is equal to the preset leak rate value.

[0018] Furthermore, the pressure acquisition unit is also used to respectively obtain the second air pressure change amount in the first chamber when each valve connecting to each second chamber is opened in sequence.

[0019] The leak rate calculation unit is further configured to, for each second air pressure change amount, determine a second current leak rate value of the first chamber based on the second air pressure change amount;

[0020] The leak rate calibration unit is further configured to use the second current leak rate value as a second leak rate calibration value and mark the valve corresponding to the second leak rate calibration value.

[0021] Furthermore, the valve detection module is further configured to obtain a pressure switch signal of the valve and generate a status signal of each valve based on the pressure switch signal.

[0022] Furthermore, an oxygen sensor is provided on the first chamber; the oxygen sensor is configured to detect the oxygen concentration of the first chamber and generate oxygen concentration detection information; the leak rate detection module includes a device status determination unit and a leak rate detection unit:

[0023] The device status determination unit is configured to determine that the semiconductor process equipment is in a non-process state when it is determined based on the status signals of the valves that all the valves are closed;

[0024] The leak rate detection unit is configured to obtain the oxygen concentration detection information, determine the current oxygen concentration of the first chamber based on the oxygen concentration detection information, compare the current oxygen concentration of the first chamber with the first leak rate calibration value, and obtain a first comparison result.

[0025] Furthermore, the leak rate detection module is further configured to:

[0026] The device status determination unit is further configured to determine that the semiconductor process equipment is in a process state when the valve detection module determines that a valve is open;

[0027] The leak rate detection unit is further configured to sequentially detect the valves connected to each second chamber, determine the target second chamber and the corresponding target second leak rate calibration value connected to the open valve; and obtain the oxygen concentration detection information, determine the current oxygen concentration of the first chamber based on the oxygen concentration detection information, compare the current oxygen concentration of the first chamber with the target second leak rate calibration value, and obtain a second comparison result.

[0028] Furthermore, the alarm module is further configured to determine that there is an external leak in the first chamber and generate a first alarm message when the first comparison result indicates that the current oxygen concentration of the first chamber is greater than the first leak rate calibration value.

[0029] Furthermore, the alarm module is further configured to determine that there is an internal leak between the first chamber and the target second chamber and generate a second alarm message when the second comparison result indicates that the current oxygen concentration of the first chamber is greater than the target second leak rate calibration value.

[0030] Adopting the above technical solutions, the leak rate detection device provided by the present utility model has the following

[0031] Beneficial effects:

[0032] The utility model first obtains a first leak rate calibration value and a plurality of second leak rate calibration values, determines the leakage situation judgment criteria for the first chamber and the second chamber, determines the process state of the semiconductor process equipment according to the state of the valve. In the non-process state, the current oxygen concentration of the first chamber is obtained at any time, and then the first comparison result between the current oxygen concentration of the first chamber and the first leak rate calibration value is determined. According to the first comparison result, it is determined whether there is an external leakage in the first chamber; in the process state, the current oxygen concentration of the first chamber is obtained, and then the second comparison result between the current oxygen concentration of the first chamber and the second leak rate calibration value of the target second chamber is determined. According to the second comparison result, it is determined that there is an internal leakage between the first chamber and the target second chamber, and an alarm message is generated, realizing real-time monitoring of the external and internal leakage phenomena of the chamber, and ensuring the safety of the chamber and the process result. Description of the drawings

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0034] Figure 1 It is a schematic diagram of the connection of each chamber of a semiconductor process equipment provided by an embodiment of the present utility model;

[0035] Figure 2 It is a schematic diagram of a chamber leak rate detection device provided by an embodiment of the present utility model. Detailed implementation manners

[0036] The technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts belong to the scope of protection of the present utility model.

[0037] As used herein, the term "one embodiment" or "embodiment" refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present utility model. In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by terms such as "upper", "lower", "top", "bottom", etc. is based on the orientation or positional relationship shown in the drawings. These are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present utility model. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. Moreover, terms such as "first" and "second" are used to distinguish similar objects and do not necessarily have to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present utility model described herein can be implemented in an order other than those illustrated or described herein.

[0038] In the process of semiconductor chemical vapor deposition, the semiconductor process equipment chambers involved generally include: a PM chamber (Process Module Chamber, process module chamber) with process functions, an LL chamber (Load Lock Chamber, load lock chamber) with transfer and cooling functions, and a transfer chamber TM chamber (Transfer Module Chamber, transfer module chamber) with transfer functions. Exemplarily, the connection structure of each chamber is referred to Figure 1 as shown. The TM chamber is connected to the EFEM (Equipment Front End Module, equipment front end module) and the PM chamber and plays the role of wafer transfer; the LL chamber ( Figure 1 showing the LLA chamber and the LLB chamber in the figure) is placed between the TM chamber and the EFEM module and plays a buffering and isolating role. It can realize the transfer of wafers from the atmospheric environment to the vacuum environment without affecting the vacuum state of the TM chamber; the PM chamber is used to perform specific process steps, such as chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, ion implantation, etc.; the LL chamber, each PM chamber and the TM chamber are connected by gate valves. The gate valves are provided with pressure switches to indicate the open or closed state of the gate valves. An O2 sensor is provided on the TM chamber to detect the oxygen concentration in the TM chamber.

[0039] In the process production, the oxygen concentration in each chamber affects the chamber safety and process results. Therefore, it is necessary to ensure the vacuum degree of the chamber, and there are particularly high requirements for the airtightness of the chamber. Airtightness is a performance characterizing the ability of the vacuum system to prevent gas penetration. Gas penetration includes external leakage and internal leakage. External leakage refers to the gas penetration between the TM chamber and the outside world, and internal leakage refers to the gas penetration between the TM chamber and the PM chamber.

[0040] The airtightness of the chamber can be calibrated by the "leak rate". The smaller the leak rate, the better the sealing performance. In the traditional process, the leak rate test is only carried out after the chamber maintenance, or the shutdown test is carried out to troubleshoot the fault after the process has been abnormal, and it is impossible to monitor the external and internal leakage of the chamber in real time for 24 hours.

[0041] In order to monitor the external and internal leakage of the chamber in real time, the present utility model provides a chamber leak rate detection device, which is applicable to semiconductor process equipment. The semiconductor process equipment includes a first chamber and a plurality of second chambers; each second chamber is connected to the first chamber through a corresponding valve, and the second chambers are independent of each other; the chamber leak rate detection device includes a leak rate calibration module 100, a valve detection module 200, a leak rate detection module 300 and an alarm module 400.

[0042] Specifically, in the embodiment of the present invention, the first chamber is a TM chamber, and the plurality of second chambers are PM chambers and LL chambers. The number of the second chambers can be determined according to the actual process conditions and is not limited herein. The second chambers are independent of each other, and each second chamber is connected to the first chamber through a valve. A pressure switch is provided on the valve, and the opening and closing state of the valve can be determined according to the pressure switch signal. When all the valves are in the closed state, the semiconductor process equipment is in a non-process state. When there is a valve in the open state, the semiconductor process equipment is in a process state.

[0043] The leak rate calibration module 100 is used to obtain a first leak rate calibration value and a plurality of second leak rate calibration values. Among them, the first leak rate calibration value represents the maximum allowable oxygen concentration that the first chamber can reach when the semiconductor equipment is in a non-process state, that is, when all the valves are closed. If the oxygen concentration value in the first chamber is greater than the first leak rate calibration value, it is determined that there is an external leakage in the first chamber; the second leak rate calibration value represents the maximum allowable oxygen concentration that the first chamber can reach when the semiconductor equipment is in a process state, that is, when there is a valve in the open state. If the oxygen concentration value in the first chamber is greater than the second leak rate calibration value, it is determined that there is an internal leakage between the first chamber and the second chamber connected to the open valve.

[0044] For the leak rate calibration module 100 to obtain the first leak rate calibration value and multiple second leak rate calibration values, in a possible implementation, it can be determined by setting a leak valve. The leak valve is connected to the first chamber. When installing the leak valve, the blind plate of the first chamber can be removed and replaced with the leak valve (not shown in the figure). The leak valve is used to change the air pressure value of the first chamber. When the leak valve is opened, external oxygen will enter the first chamber. The first chamber is theoretically a vacuum environment. By adjusting the opening degree of the leak valve, the oxygen concentration entering the first chamber can be changed, and then the air pressure value of the first chamber can be changed.

[0045] In a possible implementation, the leak rate calibration module 100 includes a leak valve control unit 110, a pressure acquisition unit 120, a leak rate calculation unit 130, and a leak rate calibration unit 140: The leak valve control unit 110 is electrically connected to the leak valve and the pressure acquisition unit 120. The leak valve control unit 110 is used to control the opening degree of the leak valve and generate a leak valve opening degree signal and send it to the pressure acquisition unit 120; The pressure acquisition unit 120 is used to respond to the leak valve opening degree signal and collect the first air pressure change amount of the first chamber when all the valves are closed; The leak rate calculation unit 130 is electrically connected to the pressure acquisition unit 120 and is used to determine the first current leak rate value of the first chamber based on the first air pressure change amount; The leak valve control unit 110 is used to adjust the opening degree of the leak valve until the first current leak rate value is equal to the preset leak rate value when the first current leak rate value is not equal to the preset leak rate value; The leak rate calibration unit 140 is used to use the first current leak rate value as the first leak rate calibration value.

[0046] Specifically, the leak valve control unit 110 is electrically connected to the leak valve and the pressure acquisition unit 120. The leak valve control unit 110 is used to control the opening degree of the leak valve to change the concentration of oxygen entering the first chamber. The control of the opening degree of the leak valve can be based on the following formula: A = (A_0 + 10i), where A represents the opening degree of the leak valve; A_0 represents the initial opening degree of the leak valve, and the value of A_0 can be determined according to the parameters and process conditions of the semiconductor process equipment and is not limited here. Exemplarily, the value of A_0 is set to 100; i is the opening degree coefficient, and initially i = 0. Each time the leak valve control unit 110 controls the opening degree of the leak valve, it generates a leak valve opening degree signal and sends it to the pressure acquisition unit 120.

[0047] The leakage valve control unit 110 controls the opening degree of the leakage valve and generates a leakage valve opening signal to send to the air pressure acquisition unit 120. In response to the leakage valve opening signal, first, when all the valve gates are closed, the first air pressure change amount of the first chamber is acquired. That is, first, it is judged whether each valve gate is in the closed state. If there is a valve gate in the open state, the valve gate is first closed to make the semiconductor process equipment in a non-process state. At this time, it is to calibrate the external leakage situation of the first chamber. The air pressure acquisition unit 120 acquires the air pressure signal through the pressure gauge installed on the first chamber, and determines the first air pressure change amount of the first chamber based on the air pressure signal. The first air pressure change amount refers to the air pressure change amount in the first chamber within a period of time. Exemplarily, first, the initial pressure value P0 of the first chamber is determined, and after setting a time interval t, the pressure value P1 of the first chamber is recorded. Then the first air pressure change amount is ΔP = P1 - P0.

[0048] The leakage rate calculation unit 130 is electrically connected to the air pressure acquisition unit 120, and is used to obtain the first air pressure change amount determined by the air pressure acquisition unit 120, and determine the first current leakage rate value of the first chamber based on the first air pressure change amount. The first current leakage rate value can be expressed in millitorr per minute. Exemplarily, the following formula is used to calculate the first current leakage rate value. The first current leakage rate value = ΔP * V / t * R * T, where ΔP is the first air pressure change amount, V is the volume of the first chamber, t is the time interval, R is the gas constant, and T is the temperature. If other factor conditions are considered, the first current leakage rate value can also be determined by other methods, which is not limited here.

[0049] The first current leakage rate value is compared with a preset leakage rate value. The preset leakage rate value can be determined according to actual process requirements. For example, it is set to 2.5 millitorr per minute. If the first current leakage rate value is not equal to the preset leakage rate value, the leakage valve control unit 110 adjusts the opening degree of the leakage valve, and then repeats the steps that the air pressure acquisition unit 120 acquires the first air pressure change amount of the first chamber, and the leakage rate calculation unit 130 determines the first current leakage rate value of the first chamber based on the first air pressure change amount until the first current leakage rate value is equal to the preset leakage rate value. Then the leakage rate calibration unit 140 is used to take the first current leakage rate value as the first leakage rate calibration value.

[0050] In a possible implementation manner, when it is determined that the first current leakage rate value is greater than the preset leakage rate value, the leakage valve control unit 110 reduces the opening degree of the leakage valve until the first current leakage rate value is equal to the preset leakage rate value; continuing to use the formula A = (A_0 + 10i) in the above embodiment, the opening degree of the leakage valve can be reduced by reducing the value of i. Exemplarily, make i = i - 1, and then substitute it into the formula to reduce the opening degree of the leakage valve; when it is determined that the first current leakage rate value is less than the preset leakage rate value, the opening degree of the leakage valve is increased until the first current leakage rate value is equal to the preset leakage rate value. The value of i can be increased. Exemplarily, make i = i + 1, and then substitute it into the above formula to increase the opening degree of the leakage valve.

[0051] Through the above embodiments, the first leak rate calibration value of the first chamber is obtained for detecting the external leakage condition of the first chamber. Next, the second leak rate calibration value of the first chamber is determined for detecting the internal leakage condition between the first chamber and the second chamber connected to the opened valve.

[0052] In a possible embodiment, the air pressure acquisition unit 120 is further configured to respectively obtain the second air pressure change amount of the first chamber when each valve connected to the second chamber is opened in sequence; the leak rate calculation unit 130 is further configured to determine the second current leak rate value of the first chamber based on the second air pressure change amount for each second air pressure change amount; the leak rate calibration unit 140 is further configured to use the second current leak rate value as the second leak rate calibration value and the valve corresponding to the second leak rate calibration value.

[0053] Specifically, the valves connected to each second chamber are opened in sequence, and the second chamber is based on Figure 1 Taking the example shown, it includes PM1 to PM4 and LLA`LLB, that is, 6 second chambers and 6 corresponding valves. First, the valve corresponding to PM1 is opened, and the air pressure acquisition unit 120 obtains the second air pressure change amount of the first chamber when each valve is opened. The determination method of the second air pressure change amount is the same as that of the first air pressure change amount, which is not limited herein. Then, the leak rate calculation unit 130 determines the second current leak rate value of the first chamber when the valve corresponding to PM1 is opened for the second air pressure change amount. The calculation method of the second current leak rate value can refer to the first current leak rate value, which is not limited herein. The leak rate calibration unit 140 uses the second current leak rate value as the second leak rate calibration value and marks the valve corresponding to the second leak rate calibration value. Next, the valves of PM2 to PM4 and LLA`LLB are opened, and the corresponding second leak rate calibration values are recorded in sequence through the above embodiments to obtain a plurality of second leak rate calibration values.

[0054] The valve detection module 200 is electrically connected to each valve, and is configured to detect and generate a status signal of each valve, and send the status signal to the leak rate detection module 300.

[0055] Specifically, the valve detection module 200 is electrically connected to the valve of the first chamber and the valves corresponding to each second chamber, and is configured to detect and generate a status signal of each valve. In a possible embodiment, the valve detection module 200 can obtain the pressure switch signal of the valve. The pressure switch is used to control the opening or closing of the valve. When the pressure switch signal changes, it indicates that the valve is opened or closed. The valve detection module 200 generates a status signal of each valve based on the pressure switch signal, and then sends the status signal of the valve to the leak rate detection module 300.

[0056] The leak rate detection module 300 is electrically connected to the leak rate calibration module 100 and the valve detection module 200 respectively, and is configured to determine a first comparison result between the current oxygen concentration in the first chamber and the first leak rate calibration value when it is determined that all the valves are closed based on the status signals of the valves; and to determine a second comparison result between the current oxygen concentration in the first chamber and the target second leak rate calibration value when it is determined that any one of the valves is open based on the status signals of the valves; the target second leak rate calibration value is the second leak rate value corresponding to the target second chamber connected to the open valve.

[0057] Specifically, the leak rate detection module 300 can detect the leak rates of the first chamber and the plurality of second chambers at any time in the non-process state or the process state of the semiconductor process equipment. The leak rate detection module 300 is electrically connected to the leak rate calibration module 100 and the valve detection module 200 respectively. When the valve status signal sent by the valve detection module 200 indicates that all the valves are closed, it represents that the semiconductor process equipment is in the non-process state, and at this time, the external leakage situation of the first chamber is detected. The leak rate detection module 300 obtains the current oxygen concentration in the first chamber, and then compares the current oxygen concentration with the first leak rate calibration value to obtain the first comparison result.

[0058] In a possible implementation manner, for obtaining the current oxygen concentration, an oxygen sensor can be set on the first chamber; the oxygen sensor is configured to detect the oxygen concentration in the first chamber and generate oxygen concentration detection information. The leak rate detection module 300 includes an equipment status determination unit 310 and a leak rate detection unit 320: the equipment status determination unit 310 is configured to determine that the semiconductor process equipment is in the non-process state when it is determined that all the valves are closed based on the status signals of the valves; the leak rate detection unit 320 is configured to obtain the oxygen concentration detection information, determine the current oxygen concentration in the first chamber based on the oxygen concentration detection information, compare the current oxygen concentration in the first chamber with the first leak rate calibration value, and obtain the first comparison result.

[0059] Specifically, the equipment status determination unit 310 obtains the valve status signal sent by the valve detection module 200. When the valve status signal indicates that all the valves are closed, it determines that the semiconductor process equipment is in the non-process state and starts to detect the external leakage situation of the first chamber. The leak rate detection unit 320 is configured to obtain the oxygen concentration detection information generated by the oxygen sensor, determine the current oxygen concentration in the first chamber based on the oxygen concentration detection information, compare the current oxygen concentration in the first chamber with the first leak rate calibration value, obtain the first comparison result, and send the first comparison result to the alarm module 400.

[0060] The alarm module 400 is electrically connected to the leak rate detection module 300, and is used to determine the leakage condition of the first chamber based on the first comparison result and generate an alarm message. In a possible way, when the first comparison result indicates that the current oxygen concentration in the first chamber is greater than the first leak rate calibration value, the alarm module 400 determines that there is an external leakage in the first chamber and generates a first alarm message.

[0061] When the valve state signal sent by the valve detection module 200 indicates that any valve is open, it represents that the semiconductor process equipment is in the process state. At this time, the internal leakage between the first chamber and the second chamber corresponding to the open valve is detected. The leak rate detection module 300 obtains the current oxygen concentration in the first chamber, and then compares the current oxygen concentration with the second leak rate calibration value to obtain a second comparison result.

[0062] In a possible implementation manner, the device state determination unit 310 is further configured to determine that the semiconductor process equipment is in the process state when the valve detection module 200 determines that a valve is open; the leak rate detection unit 320 is further configured to sequentially detect the valves connected to each second chamber, determine the target second chamber connected to the open valve and the corresponding target second leak rate calibration value; and obtain the oxygen concentration detection information, determine the current oxygen concentration in the first chamber based on the oxygen concentration detection information, and compare the current oxygen concentration in the first chamber with the target second leak rate calibration value to obtain a second comparison result.

[0063] Specifically, the device state determination unit 310 obtains the valve state signal sent by the valve detection module 200. When the valve state signal indicates that a valve is open, it determines that the semiconductor process equipment is in the non-process state and starts to detect the internal leakage between the first chamber and the second chamber. The leak rate detection unit 320 sequentially detects the valves connected to each second chamber to determine which second chamber's valve is open, and takes the second chamber connected to the open valve as the target second chamber. For example, if the valve of PM1 is open, then PM1 is taken as the target second chamber. Then it obtains the oxygen concentration detection information generated by the oxygen sensor, determines the current oxygen concentration in the first chamber based on the oxygen concentration detection information, compares the current oxygen concentration in the first chamber with the second leak rate calibration value to obtain a second comparison result, and sends the second comparison result to the alarm module 400. Through this implementation manner, the internal leakage detection between the first chamber and other second chambers can also be realized without mutual interference.

[0064] The alarm module 400 is further configured to determine the leakage condition between the first chamber and the target second chamber based on the first comparison result and generate an alarm message. In a possible way, when the second comparison result indicates that the current oxygen concentration in the first chamber is greater than the target second leak rate calibration value, it is determined that there is an internal leakage between the first chamber and the target second chamber, and a second alarm message is generated.

[0065] Through the above embodiments, first obtain the first leak rate calibration value and multiple second leak rate calibration values, determine the judgment criteria for the leakage conditions of the first chamber and the second chamber, determine the process state of the semiconductor process equipment according to the state of the valve. In the non-process state, obtain the current oxygen concentration of the first chamber at any time, and then determine the first comparison result between the current oxygen concentration of the first chamber and the first leak rate calibration value, and determine whether there is an external leakage in the first chamber according to the first comparison result; in the process state, obtain the current oxygen concentration of the first chamber, and then determine the second comparison result between the current oxygen concentration of the first chamber and the second leak rate calibration value of the target second chamber, and determine that there is an internal leakage between the first chamber and the target second chamber according to the second comparison result, generate an alarm message, and realize the real-time monitoring of the external and internal leakage phenomena of the chamber to ensure the chamber safety and process results.

[0066] The foregoing are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A chamber leak rate detection device, characterized in that: Applicable to semiconductor process equipment, the semiconductor process equipment comprises a first chamber and a plurality of second chambers; each of the second chambers is connected to the first chamber via a corresponding gate valve, and each of the second chambers is independent of each other; the chamber leak rate detection device comprises a leak rate calibration module (100), a gate valve detection module (200), a leak rate detection module (300) and an alarm module (400): The leak rate calibration module (100) is used to obtain a first leak rate calibration value and a plurality of second leak rate calibration values; The gate valve detection module (200) is electrically connected to each of the gate valves, and is used to detect and generate a status signal of each of the gate valves, and send the status signal to the leakage rate detection module (300); The leak rate detection module (300) is electrically connected to the leak rate calibration module (100) and the gate valve detection module (200) respectively, and is used to determine a first comparison result between the current oxygen concentration of the first chamber and the first leak rate calibration value when it is determined based on the state signals of the gate valves that the gate valves are all closed; and determining a second comparison result between the current oxygen concentration of the first chamber and a target second leak rate calibration value when it is determined based on the state signals of the gate valves that any of the gate valves is open; the target second leak rate calibration value is a second leak rate value corresponding to the target second chamber connected to the open gate valve; The alarm module (400) is electrically connected to the leakage rate detection module (300), and is used to determine the leakage conditions of the first chamber and the plurality of second chambers based on the first comparison result and the second comparison result, and to generate alarm information.

2. The chamber leak rate detection device according to claim 1, characterized in that: It also includes a leakage valve, which is connected to the first chamber; the leakage valve is used to change the air pressure value of the first chamber.

3. The chamber leak rate detection device according to claim 2, characterized in that: The leak rate calibration module (100) comprises a leak valve control unit (110), an air pressure collection unit (120), a leak rate calculation unit (130) and a leak rate calibration unit (140): The leakage valve control unit (110) is electrically connected to the leakage valve and the air pressure collection unit (120), and the leakage valve control unit (110) is used to control the opening of the leakage valve and generate a leakage valve opening signal and send it to the air pressure collection unit (120); The air pressure collection unit (120) is used for collecting the first air pressure variation of the first chamber in response to the leakage valve opening signal when the gate valves are all closed; The leak rate calculation unit (130) is electrically connected to the air pressure collection unit (120), and is used to determine a first current leak rate value of the first chamber based on the first air pressure change; The leakage valve control unit (110) is used to adjust the opening of the leakage valve when the first current leakage rate value is not equal to the preset leakage rate value, until the first current leakage rate value is equal to the preset leakage rate value; The leak rate calibration unit (140) is used to use the first current leak rate value as the first leak rate calibration value.

4. The chamber leak rate detection device according to claim 3, characterized in that: The leakage valve control unit (110) is also used for: When it is determined that the first current leak rate value is greater than the preset leak rate value, reducing the opening of the leak valve until the first current leak rate value is equal to the preset leak rate value; When it is determined that the first current leak rate value is less than the preset leak rate value, the opening of the leak valve is increased until the first current leak rate value is equal to the preset leak rate value.

5. The chamber leak rate detection device according to claim 3, characterized in that: The air pressure collection unit (120) is also used to obtain the second air pressure change of the first chamber when each gate valve is opened, respectively, when each gate valve connected to the second chamber is opened in sequence; The leak rate calculation unit (130) is further used to determine a second current leak rate value of the first chamber based on the second air pressure change for each second air pressure change; The leak rate calibration unit (140) is further used to use the second current leak rate value as the second leak rate calibration value and to mark the gate valve corresponding to the second leak rate calibration value.

6. The chamber leak rate detection device according to claim 1, characterized in that: The gate valve detection module (200) is also used to obtain a pressure switch signal of the gate valve, and generate a status signal of each gate valve based on the pressure switch signal.

7. The chamber leak rate detection device according to claim 1, characterized in that: An oxygen sensor is provided on the first chamber; the oxygen sensor is used to detect the oxygen concentration in the first chamber and generate oxygen concentration detection information; the leak rate detection module (300) comprises a device state determination unit (310) and a leak rate detection unit (320): The equipment state determination unit (310) is used to determine that the semiconductor process equipment is in a non-process state when it is determined based on the state signals of the gate valves that the gate valves are all closed; The leak rate detection unit (320) is used to obtain the oxygen concentration detection information, determine the current oxygen concentration of the first chamber based on the oxygen concentration detection information, and compare the current oxygen concentration of the first chamber with the first leak rate calibration value to obtain the first comparison result.

8. The chamber leak rate detection device according to claim 7, characterized in that: The leak rate detection module (300) is also used for: The equipment state determination unit (310) is further used to determine that the semiconductor process equipment is in a process state when the gate valve detection module (200) determines that the gate valve is open; The leak rate detection unit (320) is also used to detect the gate valves connected to each of the second chambers in turn, determine the target second chamber connected to the opened gate valve and the corresponding target second leak rate calibration value; and obtain the oxygen concentration detection information, determine the current oxygen concentration of the first chamber based on the oxygen concentration detection information, compare the current oxygen concentration of the first chamber with the target second leak rate calibration value, and obtain the second comparison result.

9. The chamber leak rate detection device according to claim 8, characterized in that: The alarm module (400) is also used to determine that there is an external leakage in the first chamber and generate first alarm information when the first comparison result indicates that the current oxygen concentration in the first chamber is greater than the first leakage rate calibration value.

10. The chamber leak rate detection device according to claim 9, characterized in that: The alarm module (400) is also used to determine that there is an internal leak between the first chamber and the target second chamber when the second comparison result indicates that the current oxygen concentration of the first chamber is greater than the target second leakage rate calibration value, and generate second alarm information.

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