Cooling base for wafer and cooling station
By setting heat conduction points and thermally conductive films on the wafer cooling base, the problems of uneven cooling and low efficiency are solved, and more efficient and uniform wafer cooling is achieved, reducing thermal stress and material deformation, and improving photoelectric performance.
Patent Information
- Application Number
- CN202422182661.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-05
- Publication Date
- 2025-06-20
- Estimated Expiration
- 2034-09-05
AI Technical Summary
In the prior art, the wafer cooling is uneven and the cooling efficiency is low, resulting in thermal stress and material deformation, affecting photoelectric performance.
Using a combination of heat conduction points and thermal films, the heat conduction efficiency and uniformity of heat are improved by evenly setting the heat conduction points on the cooling base and setting the thermal conduction film, such as graphite film, below it.
It significantly improves the cooling efficiency and uniformity of the wafer, reduces thermal stress and material deformation, maintains a high photoelectric conversion efficiency, and facilitates installation and disassembly.
Smart Images

Figure CN223006744U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor manufacturing, and particularly relates to a cooling base and a cooling station for a wafer. Background Art
[0002] In the process of semiconductor manufacturing, a large amount of heat is generated when the wafer undergoes various processes (such as lithography, etching, chemical vapor deposition, etc.); if the heat is not effectively dissipated, the wafer will overheat.
[0003] Currently, in order to achieve the cooling of the wafer after processing, the heat sink method is adopted for the back cooling of the wafer. The principle is to place the wafer on a heat sink with high thermal conductivity, and the heat sink absorbs and transfers the excess heat generated by the wafer. The heat sink is usually made of materials with high thermal conductivity such as copper and aluminum, which can effectively conduct the heat from the wafer to the cooling system to keep the temperature of the wafer within an appropriate range; traditional cooling bases have problems such as uneven cooling and low cooling efficiency, and are not convenient for installation and disassembly; different regions of the wafer will cool at different speeds, resulting in thermal stress and cracking; under this premise, how to use a cooling base for the wafer with high cooling efficiency and more uniform cooling is an urgent technical problem in the industry.
[0004] Based on this, a cooling base and a cooling station for a wafer are needed to solve the above problems. Summary of the Utility Model
[0005] The purpose of the utility model is to provide a cooling base and a cooling station for a wafer, which use heat conduction points and a heat conduction film to make the cooling efficiency of the wafer higher and the cooling more uniform.
[0006] The purpose of the utility model is achieved by the following technical solutions:
[0007] In the first aspect, the utility model provides a cooling base for a wafer, which includes a cooling base main body. A groove is provided at the edge of the upper surface of the cooling base main body; a plurality of heat conduction points for supporting the wafer are provided on the upper surface of the cooling base main body, and the height of the heat conduction points is higher than that of the cooling base main body. A cooling interface is provided on the lower surface of the cooling base; a heat conduction film is also provided on the cooling base main body, the heat conduction film is arranged below the heat conduction points, and openings are made at the positions of the heat conduction film corresponding to the heat conduction points.
[0008] Preferably, the heat conduction film is a graphite film.
[0009] Preferably, the thickness of the heat conduction film is 0.1mm + / - 0.02mm.
[0010] Preferably, the heat conduction film is fixed on the cooling base main body through an adhesive layer, and the adhesive layer is a thin film adhesive with high thermal conductivity.
[0011] Further, the heat conduction points are evenly arranged on the cooling base body.
[0012] Preferably, fixing holes are provided on the heat conduction points, and sapphires protruding from the upper surface of the cooling base body are installed in the fixing holes.
[0013] Further, the sapphire protrudes from the upper surface of the cooling base body by 0.5mm + / - 0.05mm.
[0014] In a second aspect, the present utility model provides a cooling station for wafers, which includes at least one of the above cooling bases, a liquid cooling channel, and a nitrogen air pressure device. The liquid cooling channel is arranged on the lower surface of the cooling base body; the nitrogen air pressure device is arranged around the cooling base to form a nitrogen protection layer.
[0015] Compared with the prior art, the beneficial effects that can be achieved by at least one of the above technical solutions adopted in the embodiments of this specification at least include:
[0016] First, the present utility model is provided with a heat conduction film on the cooling base body, which improves the heat conduction efficiency of the wafer, reduces the thermal resistance, ensures uniform heat distribution, and prevents the wafer from cracking due to uneven cooling.
[0017] Second, through the uniform distribution of the heat conduction points, the present utility model can effectively transfer the heat of the wafer evenly on the entire cooling base body, avoiding local overheating.
[0018] Third, due to the high thermal conductivity of the sapphire, the present utility model can quickly conduct heat from the cooling base body to the heat dissipation device; it can reduce the thermal stress and material deformation of the wafer caused by uneven temperature; the high transparency of the sapphire allows optical elements or laser diodes to be directly installed on it without affecting the light transmission; by effectively controlling the temperature through the backside cooling of the wafer, the decline in optoelectronic performance caused by overheating can be reduced, thereby maintaining a high photoelectric conversion efficiency.
[0019] Fourth, the upper surface of the cooling base body of the present utility model is conveniently provided with grooves for easy grasping, providing a stable support point for tools such as staff or robotic arms, preventing sliding or falling during handling or installation. Especially in complex environments or glove operations, the grooves can significantly improve the grasping force. Description of the Drawings
[0020] To more clearly illustrate the technical solutions of the embodiments of the present utility model, the accompanying drawings required for use in the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.
[0021] Figure 1 Structural schematic diagram of the cooling base according to the embodiment of the present utility model;
[0022] Figure 2 Top view of the cooling base according to the embodiment of the present utility model;
[0023] Figure 3 Comparison diagram of the temperature reduction effects of the cooling base according to the embodiment of the present utility model and the standard cooling base;
[0024] Figure 4 Structural schematic diagram of the single-wafer loading lock according to the embodiment of the present utility model.
[0025] Explanation of the reference numerals in the drawings
[0026] 1. Cooling base; 11. Cooling base main body; 111. Groove; 12. Heat conduction point; 13. Heat conduction film; 2. Cooling station. Specific implementation manners
[0027] The embodiments of the present utility model will be described in detail below with reference to the accompanying drawings.
[0028] The following illustrates the implementation manners of the present utility model through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present utility model from the content disclosed in this specification. Obviously, the described embodiments are only some embodiments of the present utility model, rather than all embodiments. The present utility model can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present utility model. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts belong to the scope of protection of the present utility model.
[0029] It should be noted that the following description relates to various aspects of embodiments within the scope of the appended claims. It will be apparent that the aspects described herein can be embodied in a wide variety of forms, and any specific structure and / or function described herein is merely illustrative. Based on the present utility model, those skilled in the art should understand that one aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number and aspects set forth herein can be used to implement a device and / or practice a method. Additionally, this device can be implemented and this method can be practiced using other structures and / or functionality in addition to one or more of the aspects set forth herein.
[0030] In the existing cooling base 1, heat cannot be effectively conducted and dissipated, resulting in heat accumulation near the contact point between the wafer and the cooling base 1, with low cooling efficiency and prone to wafer breakage.
[0031] Based on this, an embodiment of this specification proposes a dehumidification component solution: By uniformly arranging heat conduction points 12 on the cooling base 1, this solution can significantly improve the efficiency of heat conduction from the cooling base 1 to the cooling station 2, thereby rapidly reducing the wafer temperature.
[0032] Figure 1 The figure shows a schematic structural diagram of the cooling base 1 for a wafer of the present utility model, which includes a cooling base body 11. The cooling base body 11 can be made of metal, such as copper and aluminum; a heat-conducting film 13 is provided on the upper surface of the cooling base body 11. By setting the heat-conducting film 13 on the cooling base body 11, the heat transfer efficiency is significantly improved, and at the same time, the heat conduction is more uniform, preventing the cooling base 1 body from cracking; a plurality of heat conduction points 12 for supporting the wafer are provided on the upper surface of the cooling base body 11. The height of the heat conduction points 12 is higher than that of the cooling base body 11. A cooling interface is provided on the lower surface of the cooling base body 11, and the cooling interface is connected to a cooling device to dissipate heat from the cooling base 1.
[0033] In a preferred embodiment, the heat-conducting film 13 is a graphite film. The heat-conducting film 13 made of graphite material has an extremely high heat conductivity, with more heat-conducting advantages than common metals such as aluminum and copper; the heat generated by the wafer or other heat-generating components is evenly conducted to the cooling base 1 faster through the graphite film, ensuring the stable operation of the device at a lower temperature; the thickness of the graphite film is 0.1mm + / - 0.02mm, and the thermal conductivity is not less than Y W / m·K; the graphite film is fixed on the cooling base body through an adhesive layer, and the adhesive layer is a film adhesive with high heat-conducting performance, such as an epoxy resin adhesive.
[0034] In a preferred embodiment, the heat conduction points 12 are uniformly arranged on the cooling base body 11.
[0035] In a preferred embodiment, a fixing hole is provided on the heat conduction point 12, and a sapphire protruding from the upper surface of the cooling base body 11 is installed in the fixing hole.
[0036] In a preferred embodiment, the sapphire protrudes from the upper surface of the cooling base body 11 by 0.5 mm + / - 0.05 mm; the wafer can be closer to the liquid cooling channel without contacting the upper surface of the cooling base 1, avoiding uneven heat conduction caused by the contact between the wafer and the cooling base 1.
[0037] In a preferred embodiment, a groove 111 is provided at the edge of the upper surface of the cooling base body 11 for facilitating the user to grasp. The shape of the groove 111 can be flexibly adjusted according to the robotic arm or finger; in this solution, the groove 111 provides a stable support point for tools such as staff or robotic arms, preventing sliding or falling during handling or installation. Especially in a complex environment or when operating with gloves, the groove 111 can significantly improve the grasping force; an internal thread can also be provided on the lower surface of the cooling base body 11, and the cooling base 1 can be rotationally fixed in position through the groove 111.
[0038] As Figure 3 shown is a comparison diagram of the cooling effects of this application and the standard cooling base 1. It can be seen from the figure that within the same cooling time, the cooling base 1 with the structure of this application has a better cooling effect than the standard cooling base 1, increasing the cooling efficiency of the cooling base 1 for the wafer; under the same cooling conditions, when the cooling time is 60 seconds, the temperature of the wafer cooled by the cooling base 1 of the present utility model is 100 °C, while the temperature of the wafer cooled by the standard cooling base is 150 °C.
[0039] As Figure 4 shown is a single-wafer loading lock for wafers of the present utility model. The single-wafer loading lock includes a cooling station 2, and the cooling station 2 includes a cooling base 1, a liquid cooling channel, and a nitrogen pneumatic device. The liquid cooling channel is arranged on the lower surface of the cooling base body 11; the nitrogen pneumatic device is arranged around the cooling base 1 to form a nitrogen protection layer.
[0040] The single-wafer load lock (SWLL) processes one wafer at a time using two wafer slots, a wafer clamp assembly, and a cooling station 2; the single-wafer load lock serves as a vacuum isolation port for transferring wafers in and out of the wafer processing apparatus, and the vacuum isolation uses pure nitrogen from a nitrogen pneumatic device to provide a cleaner space; the storage capacity of the single-wafer load lock is 2 wafers; one load lock is designated for processed wafers, while the other load lock is for unprocessed wafers being loaded into the wafer processing apparatus; typically, a wafer processing apparatus is configured with two SWLLs to meet throughput requirements; the cooling station 2 is equipped with an independent wafer transfer lift indexer for removing the wafer from the vacuum robot blade and lowering it to the cooling base, further enhancing the cooling efficiency of the wafer. Through the design of the cooling base 1 of the present utility model, the cooling effect of the wafer is significantly improved, and the stability of the equipment in high-efficiency production is ensured.
[0041] In this specification, for the same or similar parts among the various embodiments, reference can be made to each other. Each embodiment focuses on the differences from other embodiments. In particular, for the embodiments described later, since the description is relatively simple, reference can be made to the relevant parts of the foregoing embodiments for the relevant content.
[0042] The above are only the specific implementation manners of the present utility model, but the protection scope of the present utility model is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present utility model should be covered within the protection scope of the present utility model. Therefore, the protection scope of the present utility model should be subject to the protection scope of the claims.
Claims
1. A cooling base for a wafer, characterized in that: It includes a cooling base body, the edge of the upper surface of the cooling base body is provided with a groove; the upper surface of the cooling base body is provided with a plurality of heat conduction points for supporting wafers, the height of the heat conduction points is higher than the cooling base body, and a cooling interface is provided on the lower surface of the cooling base; a heat-conducting film is also provided on the cooling base body, the heat-conducting film is provided below the heat-conducting points, and the heat-conducting film has holes corresponding to the positions of the heat-conducting points.
2. A cooling base for a wafer as claimed in claim 1, characterized in that: The thermally conductive film is a graphite film.
3. A cooling base for a wafer as claimed in claim 2, characterized in that: The thickness of the thermally conductive film is 0.1 mm + / - 0.02 mm.
4. A cooling base for a wafer as claimed in claim 3, characterized in that: The thermally conductive film is fixed on the cooling base body through an adhesive layer, and the adhesive layer is a film adhesive with high thermal conductivity.
5. A cooling base for a wafer as claimed in claim 1, characterized in that: The heat transfer points are evenly arranged on the cooling base body.
6. A cooling base for a wafer according to any one of claims 1 to 5, characterized in that: The heat conduction point comprises a fixing hole, in which a sapphire protruding from the upper surface of the cooling base body is installed.
7. A cooling base for a wafer as claimed in claim 6, characterized in that: The sapphire protrudes from the upper surface of the cooling base body by 0.5 mm + / - 0.05 mm.
8. A cooling station for a wafer, characterized in that: It includes at least one cooling base, a liquid cooling channel and a nitrogen air compressor as described in any one of claims 1 to 7, wherein the liquid cooling channel is arranged on the lower surface of the cooling base body; the nitrogen air compressor is arranged around the cooling base to form a nitrogen protective layer.
Citation Information
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