Ultrahigh-purity graphite mold for semiconductors

Abstract

The utility model belongs to the technical field of graphite processing, and particularly relates to an ultra-pure graphite die for semiconductors, which comprises a die holder, a die body A, a die body B and an inner die, a support table is arranged in the center of the upper surface of the die holder, positioning blocks are symmetrically arranged on the surface of the die holder, and the two positioning blocks are respectively arranged on two sides of the support table. A base is arranged in the center of the upper surface of the supporting table, the mold body A and the mold body B are semicircular and are symmetrically arranged, bottom holes are formed in the lower surfaces of the mold body A and the mold body B, the positioning blocks are matched with the inner sizes of the bottom holes, and the mold is formed by combining the left mold body, the right mold body and the mold base. Wherein the inner wall which is most easily damaged is formed by combining the independent inner mold, the inner wall can be independently replaced when being damaged, the replacement of the inner mold can be carried out under the condition that the whole mold is not disassembled, the maintenance efficiency is improved, and the use cost can be greatly saved by independently replacing parts.

Description

Technical Field

[0001] The utility model belongs to the technical field of graphite processing, and particularly relates to an ultra-high purity graphite mold for semiconductors. Background Art

[0002] Ultra-high purity graphite refers to graphite with a carbon content > 99.99%, which is widely used in the fields of high-grade refractory materials and coatings in the metallurgical industry, stabilizers for pyrotechnic materials in the military industry, etc. Among them, graphite materials have gradually become the preferred materials for mold making due to their good physical and chemical properties.

[0003] At present, graphite molds are often used for firing in the production process of semiconductor devices. However, it is found that the inner cavity of the mold often suffers losses during use. The traditional graphite mold is integrally formed, which leads to the need to reprocess or directly replace the entire mold when the inner wall of the mold cavity is damaged, resulting in a certain degree of waste and indirectly increasing the production cost. Summary of the Utility Model

[0004] Aiming at the problems existing in the prior art, the purpose of the utility model is to provide an ultra-high purity graphite mold for semiconductors, which can realize the separate replacement of the inner mold of the graphite mold, so as to save costs and improve efficiency.

[0005] To achieve the above purpose, the utility model provides the following technical solutions:

[0006] An ultra-high purity graphite mold for semiconductors, comprising a mold base, mold body A, mold body B and an inner mold. A support platform is arranged at the center of the upper surface of the mold base. Positioning blocks are symmetrically arranged on the surface of the mold base, and the two positioning blocks are respectively placed on both sides of the support platform. A base is arranged at the center of the upper surface of the support platform. Mold body A and mold body B are semicircular and symmetrically arranged. Bottom holes are opened on the lower surfaces of mold body A and mold body B. The internal dimensions of the positioning blocks and the bottom holes are mutually adapted. T-shaped chutes are opened inside mold body A and mold body B. The inner molds are respectively installed on the inner walls of mold body A and mold body B. Positioning convex strips are arranged on the outer sides of the inner molds, and the positioning convex strips are placed inside the T-shaped chutes. The bottoms of the two inner molds are both in contact with the upper surface of the support platform, and the base is placed below the inner sides of the two inner molds.

[0007] Further, a conical surface is arranged at the bottom of the positioning convex strip, and through holes are opened on the surfaces of mold body A and mold body B. The conical surface corresponds to the position of the through holes.

[0008] Further, the upper surface of the inner mold is flush with mold body A and mold body A.

[0009] Further, positioning bolts are symmetrically arranged on both sides of mold body A, and positioning holes are symmetrically opened on the surfaces of both sides of mold body B. The internal dimensions of the positioning bolts and the positioning holes are mutually adapted.

[0010] Furthermore, extension plates are symmetrically arranged above the outer sides of the mold body A and the mold body B, and a handle is arranged between two extension plates in the same group.

[0011] Compared with the prior art, the beneficial effects of the present utility model are as follows: The mold is composed of a left and right mold body and a mold base, and can be quickly assembled or disassembled during use. The inner wall, which is most likely to be damaged, is composed of a separate inner mold. When damaged, it can be replaced separately. The replacement of the inner mold can be carried out without disassembling the whole mold, improving the maintenance efficiency, and the separate replacement of parts can greatly save the use cost. Description of the Drawings

[0012] Figure 1 is a three-dimensional assembled structure schematic diagram of the present utility model;

[0013] Figure 2 is a three-dimensional exploded structure schematic diagram of the present utility model;

[0014] Figure 3 is a cross-sectional structure schematic diagram of the mold body and the inner mold of the present utility model in a sectional view;

[0015] Figure 4 is a three-dimensional structure schematic diagram of the convex strip of the inner mold box of the present utility model.

[0016] In the drawings, the list of components represented by each reference numeral is as follows:

[0017] 1. Mold base; 2. Positioning block; 3. Support platform; 4. Base; 51. Mold body A; 52. Mold body B; 6. Extension plate; 7. Handle; 8. T-shaped chute; 9. Inner mold; 10. Positioning convex strip; 11. Tapered surface; 12. Through hole; 13. Bottom hole; 14. Positioning hole; 15. Positioning bolt. Detailed Embodiments

[0018] In order to make the purpose and advantages of the present utility model clearer, the present utility model will be specifically described below in conjunction with embodiments. It should be understood that the following text is only used to describe one or several specific implementation manners of the present utility model, and does not strictly limit the specific protection scope claimed by the present utility model.

[0019] Please refer to Figures 1 - 4As shown in the figure, an ultra-high purity graphite mold for semiconductors includes a mold base 1, a mold body A51, a mold body B52, and an inner mold 9. A support platform 3 is provided at the center of the upper surface of the mold base 1, and positioning blocks 2 are symmetrically arranged on the surface of the mold base 1. The two positioning blocks 2 are respectively placed on both sides of the support platform 3. A base 4 is provided at the center of the upper surface of the support platform 3. The mold body A51 and the mold body B52 are semi-circular and symmetrically arranged. When the mold body A51 and the mold body B52 are combined, a cylindrical structure is formed, so as to form a sealed space inside. Bottom holes 13 are opened on the lower surfaces of both the mold body A51 and the mold body B52. The internal dimensions of the positioning block 2 and the bottom hole 13 are mutually adapted. Through their mutual cooperation, the docking stability of the mold body A51 and the mold body B52 with the mold base 1 is ensured. At this time, due to its own weight, the mold body A51 and the mold body B52 will not separate from the mold base 1, and they can only be separated by lifting. T-shaped chutes 8 are opened inside both the mold body A51 and the mold body B52. The inner molds 9 are respectively installed on the inner walls of the mold body A51 and the mold body B52. The inner molds 9 are also semi-circular. A positioning rib 10 is provided on the outer side of the inner mold 9. The positioning rib 10 is placed inside the T-shaped chute 8. The T-shaped structure can ensure that the inner mold 9 can only slide vertically. Then, the inner mold 9 at the top can be separately replaced and disassembled without disassembling other parts. The bottoms of the two inner molds 9 are both in contact with the upper surface of the support platform 3, which improves the support force for the inner mold 9. And the base 4 is placed below the inner sides of the two inner molds 9, so as to form a sealed space inside the two inner molds 9 for placing the firing material.

[0020] Please refer to Figures 2 - 4 As shown in the figure, a conical surface 11 is provided at the bottom of the positioning rib 10. Through holes 12 are opened on the surfaces of both the mold body A51 and the mold body B52. The conical surface 11 corresponds to the position of the through hole 12. After the inner mold 9 is installed in place, the stepped surface below the conical surface 11 is supported by the through hole 12 to prevent further falling, and the inner mold 9 is effectively limited.

[0021] Among them, the upper surface of the inner mold 9 is flush with the mold body A51 and the mold body A51 to ensure that the upper surface of the mold is overall flat, so as to facilitate cleaning or covering the top of the mold cavity.

[0022] Please refer to Figure 2 As shown in the figure, positioning bolts 15 are symmetrically arranged on both sides of the mold body A51. Positioning holes 14 are symmetrically opened on the surfaces of both sides of the mold body B52. The internal dimensions of the positioning bolt 15 and the positioning hole 14 are mutually adapted. Through their mutual cooperation, the stability after the mold body A51 and the mold body B52 are combined is ensured, preventing misalignment, and ensuring that a circular space is formed inside the two inner molds 9. When assembling, the mold body A51 and the mold body B52 should be assembled first, and then docked with the mold base 1.

[0023] Please refer to Figure 1 and Figure 2As shown, extension plates 6 are symmetrically arranged above the outer sides of the mold body A51 and the mold body B52. A handle 7 is arranged between two extension plates 6 in the same group, so as to facilitate the hand-held operation of the mold body A51 and the mold body B52 from the outside.

[0024] Among them, for the ultra-high purity graphite for semiconductors, according to the "Guiding Catalog for the First Batch of Applications of Key New Materials (2024 Edition)", its ash content is <5 ppm; the contents of B, Al, and Fe are ≤0.01 ppm; the resistivity (μΩ·m) is 11 - 15.

[0025] Among them, the parts in the graphite mold are all made of ultra-high purity graphite for semiconductors.

[0026] The working principle of the present utility model is as follows: First, install the inner mold 9 on the inner walls of the mold body A51 and the mold body B52, and ensure the stability of the installation of the inner mold 9 through the cooperation of the positioning rib 10 with a T-shaped structure and the T-shaped chute 8. When the stepped surface at the bottom of the conical surface 11 is supported by the through hole 12, the upper surface of the inner mold 9 can just be flush with the mold body A51 and the mold body B52 to ensure that the top of the mold is flat. Then, butt the mold body A51 and the mold body B52 so that the positioning bolt 15 enters the positioning hole 14 to maintain the effective cooperation of the mold body A51 and the mold body B52. Then, install the assembled mold body A51 and the mold body B52 on the mold base 1, so that the positioning block 2 cooperates with the bottom hole 13 to maintain the stability of the assembly. At the same time, the bottoms of the two inner molds 9 are in contact with the upper surface of the support table 3, and the base 4 enters between the two inner molds 9 to form a space inside the inner mold 9. On the contrary, when the inner mold 9 is damaged and needs to be disassembled, the conical surface 11 can be externally extruded to push the inner mold 9 upwards, and then the damaged inner mold 9 can be separately taken out from the bottom.

[0027] The above is only the preferred embodiment of the present utility model. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present utility model, several improvements and refinements can be made, and these improvements and refinements should also be regarded as the protection scope of the present utility model. The structures, devices, and operation methods not specifically described and explained in the present utility model, unless otherwise specified and limited, are implemented according to the conventional means in the art.

Claims

1. An ultra-high purity graphite mold for semiconductors, comprising a mold base (1), a mold body A (51), a mold body B (52) and an inner mold (9), characterized in that: A support platform (3) is arranged at the center of the upper surface of the mold base (1); positioning blocks (2) are symmetrically arranged on the surface of the mold base (1); two positioning blocks (2) are respectively arranged on both sides of the support platform (3); a base (4) is arranged at the center of the upper surface of the support platform (3); the mold body A (51) and the mold body B (52) are semicircular and symmetrically arranged; bottom holes (13) are opened on the lower surfaces of the mold bodies A (51) and the mold bodies B (52); the positioning blocks (2) and the bottom holes (13) are arranged in a symmetrical manner; The sizes of the two parts are adapted to each other, the mold body A (51) and the mold body B (52) are both provided with a T-shaped slide groove (8), the inner mold (9) is respectively installed on the inner wall of the mold body A (51) and the mold body B (52), the outer side of the inner mold (9) is provided with a positioning convex strip (10), the positioning convex strip (10) is placed on the inner side of the T-shaped slide groove (8), the bottoms of the two inner molds (9) are in contact with the upper surface of the support platform (3), and the base (4) is placed below the inner side of the two inner molds (9).

2. The ultra-high purity graphite mold for semiconductor according to claim 1, characterized in that: The bottom of the positioning convex strip (10) is provided with a conical surface (11), and the surfaces of the mold body A (51) and the mold body B (52) are both provided with through holes (12), and the positions of the conical surface (11) and the through holes (12) correspond to each other.

3. The ultra-high purity graphite mold for semiconductor according to claim 1, characterized in that: The upper surface of the inner mold (9) is flush with the mold body A (51) and the mold body A (51).

4. The ultra-high purity graphite mold for semiconductor according to claim 1, characterized in that: Positioning bolts (15) are symmetrically arranged on both sides of the mold body A (51), and positioning holes (14) are symmetrically opened on the surfaces of both sides of the mold body B (52), and the positioning bolts (15) are adapted to the internal dimensions of the positioning holes (14).

5. The ultra-high purity graphite mold for semiconductor according to claim 1, characterized in that: Extension plates (6) are symmetrically arranged on the upper outer sides of the mold body A (51) and the mold body B (52), and a hand grip (7) is arranged between two extension plates (6) in the same group.

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