Electronic device, electronic package, and electronic apparatus

Abstract

The utility model discloses an electronic device, an electronic packaging part and electronic equipment. The electronic device comprises a flexible supporting plate; the flexible thin film layer is attached to the surface of the flexible supporting plate; and the conductive circuit layer is formed on the flexible thin film layer, and the conductive circuit layer is used for being bound with at least one control element. According to the electronic device, the flexible thin film is separated from the hard substrate and then attached to the flexible supporting plate, and the cutting yield of the circuit unit can be increased.

Description

Technical Field

[0001] The present application relates to the preparation technology of flexible panel-level chip devices, and particularly to an electronic device, an electronic package, and an electronic equipment. Background Art

[0002] Currently, in the preparation process of flexible panel-level chips, a circuit functional layer is formed on a glass substrate, and a flexible chip panel is formed through the circuits between the functional layers. However, due to the flexible nature of the flexible chip panel during chip particle cutting, the chip cutting success rate is quite low, resulting in a reduction in the overall product yield. Even when the chip panel is multi-chip packaged, serious chip damage will occur during user cutting. Summary of the Utility Model

[0003] The present application provides an electronic device and an electronic package to at least solve the foregoing technical problems.

[0004] According to the first aspect of the embodiments of the present application, an electronic device is provided, including:

[0005] A flexible support plate;

[0006] A flexible thin film layer, attached to the surface of the flexible support plate;

[0007] A conductive circuit layer, formed on the flexible thin film layer, and the conductive circuit layer is used to bind to at least one control element.

[0008] In an implementable manner, the electronic device further includes:

[0009] At least one control element, formed on the flexible thin film, and the control element is electrically connected to the conductive circuit.

[0010] In an implementable manner, the electronic device further includes:

[0011] A waterproof layer, provided on the flexible thin film layer, and the conductive circuit layer is formed on the waterproof layer.

[0012] In an implementable manner, the line width of the conductive circuit in the conductive circuit layer is 0.5 micrometers to 20 micrometers.

[0013] In an implementable manner, the Young's modulus of the flexible support plate is greater than the Young's modulus of the flexible thin film layer.

[0014] In an implementable manner, the range of the Young's modulus of the flexible thin film layer is: 5×10^9 N / m 2 to 10×10^9 N / m 2 .

[0015] In one possible implementation, the coefficient of thermal expansion of the flexible film layer ranges from 0.5 to 5 ppm / °C.

[0016] In one possible implementation, the surface roughness of the flexible film layer ranges from 0.1 nm to 1 nm.

[0017] According to a second aspect of the embodiments of the present application, there is provided an electronic device, including:

[0018] A rigid substrate;

[0019] A flexible support plate, disposed on the rigid substrate;

[0020] A flexible film layer, attached to the surface of the flexible support plate;

[0021] A conductive circuit layer, formed on the flexible film layer, and the conductive circuit layer is used for binding to at least one electronic component.

[0022] According to a third aspect of the embodiments of the present application, there is provided an electronic package, including:

[0023] A packaging shell, provided with a plurality of accommodation cavities, and the packaging shell is strip-shaped;

[0024] A plurality of the foregoing electronic devices, and the electronic devices are disposed in the accommodation cavities.

[0025] According to a fifth aspect of the embodiments of the present application, there is provided an electronic device, including the electronic package as described above.

[0026] The technical solutions provided by the embodiments of the present application may include the following beneficial effects:

[0027] In the electronic device provided by the present application, after separating the flexible film layer from the rigid substrate and attaching the flexible film layer to the flexible support plate, when cutting the stacked structure, the flexible support plate can provide tension for the flexible film layer to better protect the conductive circuit layer, prevent the flexible film layer from wrinkling during cutting and thus damage the conductive circuit layer, and greatly improve the cutting yield of the circuit unit.

[0028] Further, the electronic device of the present application includes the flexible support plate, and there is no need to remove the flexible support plate, further reducing the probability of damage to the flexible film layer and the conductive circuit layer thereon.

[0029] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present application. Description of the Drawings

[0030] The accompanying drawings here are incorporated into the specification and form a part of this specification, showing embodiments consistent with this application, and are used together with the specification to explain the principles of this application.

[0031] Figure 1 Schematic flow chart of the manufacturing method of an electronic device shown in an embodiment of this application;

[0032] Figure 2 Schematic flow chart of the manufacturing process of an electronic device shown in an embodiment of this application;

[0033] Figure 3 Schematic structural diagram of a panel-level electronic device shown in an embodiment of this application;

[0034] Figure 4 Schematic diagram of the composition structure of an electronic device shown in an embodiment of this application;

[0035] Figure 5 Schematic structural diagram of an electronic package of an embodiment of this application;

[0036] Figure 6 Schematic structural diagram of an electronic device shown in another embodiment of this application. Detailed implementation manners

[0037] Here, the exemplary embodiments will be described in detail, and the examples are shown in the accompanying drawings. When the following description refers to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation manners described in the following exemplary embodiments do not represent all implementation manners consistent with this application. On the contrary, they are only examples of devices and methods consistent with some aspects of this application as detailed in the appended claims.

[0038] Figure 1 Schematic flow chart of the manufacturing method of an electronic device shown in an embodiment of this application, as Figure 1 shown, the manufacturing method of the electronic device in the embodiment of this application includes the following steps:

[0039] Step 101, disposing a flexible film on a rigid substrate to form a flexible film layer.

[0040] In the embodiments of the present application, considering cost and processing convenience, the rigid substrate is a glass substrate. The embodiments of the present application are described by taking the glass substrate as an example, and other rigid materials such as rigid plastics can also be used. The flexible film is bonded to the glass substrate. The flexible film mainly uses plastic materials, and generally only needs to have characteristics such as flexibility, transparency, conductivity, and insulation. Physical vapor deposition, chemical vapor deposition, sputtering, ion beam and other methods are usually used. As an example, sputtering and ion beam methods can be used to dispose the flexible film on the glass substrate to better control the accuracy and uniformity of the flexible film. In addition, the flexible film can also be a pre-formed film.

[0041] The flexible film here can be at least one of the following materials: Polyimide (PI), Polyethylene Terephthalate (PET), Polyethylene Naphthalate (PEN), Ultra-Thin Glass (UTG), etc. The selected flexible film only needs to have a service temperature range of -60°C to 170°C and high insulation performance. The thickness of the flexible film in the embodiments of the present application is 10 microns to 200 microns. As an example, the thickness of the flexible film can be 12 microns, 15 microns, 20 microns, 30 microns, 50 microns, 80 microns, 100 microns, 120 microns, 150 microns, or 180 microns, etc.

[0042] In this embodiment, the size range of the rigid substrate can be that the length is greater than or equal to 500 mm and the width is greater than or less than 400 mm. Selecting a glass substrate with a larger size within this range can produce more electronic devices and improve the production efficiency of electronic devices. The role of the rigid substrate is to play a role of bearing and supporting, which is convenient for subsequent production of conductive circuits on the flexible film layer. Without the rigid substrate, the flexible film may shrink and wrinkle during the subsequent production of the conductive circuit layer, which is not conducive to the formation of the conductive circuit. The rigid substrate is preferably a glass substrate.

[0043] Step 102, form a conductive circuit layer on the flexible film layer, and a conductive circuit is formed.

[0044] In the embodiments of the present application, a conductive material can be sputtered on the flexible film layer by magnetron sputtering to form a conductive circuit layer. The conductive circuit layer includes a layer structure composed of a metal layer, graphene, metal oxide, etc. The material for forming the metal layer in the embodiments of the present application can include at least one of aluminum, molybdenum, silver, chromium, nickel, titanium, and copper, or a combined metal of multiple metals.

[0045] After the conductive material layer is formed in the embodiments of the present application, it is also necessary to fabricate conductive lines on the conductive material layer, that is, to perform circuit wiring to form the conductive lines required for the electronic device. As an implementation method, the yellow light process of a panel thin film transistor (TFT) can be used. After that, through manufacturing processes such as cleaning, photoresist coating, exposure, development, etching, and stripping, the conductive material layer is formed into a conductive line layer to generate various conductive lines that can conduct electricity. The line width and line spacing (or line-to-line distance) of the conductive lines are two relatively important parameters of the conductive lines. These two parameters can be independently set according to design requirements and manufacturing process limitations. The line width generally refers to the width of the conductor line, while the line spacing refers to the distance between the centers of adjacent conductor lines. During design, in order to achieve ideal electrical performance, reduce crosstalk, increase integration density, optimize the manufacturing process, etc., the line width and line spacing will be optimized separately.

[0046] The line width range of the conductive line processing and fabrication in the embodiments of the present application is from 0.5 micrometers to 20 micrometers, preferably 1 - 5 micrometers. As an example, the line width of the conductive circuit can be 1 micrometer, 2 micrometers, 3 micrometers, 5 micrometers, 7 micrometers, 10 micrometers, 13 micrometers, 15 micrometers, or 19 micrometers, etc. The line spacing range is from 0.5 micrometers to 25 micrometers. By first attaching the flexible film to the rigid substrate in the present application and then through the above process method, a line width of 0.5 micrometers to 20 micrometers and a line spacing of 0.5 micrometers to 25 micrometers can be formed. Compared with forming conductive lines on the flexible film by using a conventional method, using the above method can significantly reduce the line width and line spacing between the conductive lines.

[0047] The thickness range of the conductive material layer in the embodiments of the present application is from 200 nanometers to 3000 nanometers. As an example, the thickness of the conductive material layer can be 250 nanometers, 300 nanometers, 500 nanometers, 800 nanometers, 1000 nanometers, 1200 nanometers, 1500 nanometers, 1600 nanometers, 1900 nanometers, 2000 nanometers, 2300 nanometers, 2500 nanometers, 2700 nanometers, or 2900 nanometers, etc.

[0048] After the conductive layer in this embodiment is etched, a plurality of conductive line units arranged in a matrix will be formed. When subsequently cut into multiple circuit units, each circuit unit will have one of the said conductive line units.

[0049] Step 103, separate the flexible film layer from the rigid substrate.

[0050] In an embodiment of the present application, after a conductive circuit layer is formed on a flexible thin film layer, the flexible thin film layer is removed from a glass substrate for further fabrication of an electronic device with a flexible support plate according to the embodiment of the present application.

[0051] Step 104: Attach the flexible thin film layer to a flexible support plate to form a stacked structure.

[0052] The stacked structure is used to be cut into a plurality of circuit units, and the circuit units are used to form the electronic device.

[0053] In an embodiment of the present application, after the flexible thin film layer is detached from the glass substrate, a corresponding flexible support plate is prepared, and the flexible thin film layer is attached to the flexible support plate to form a stacked structure, so as to support the flexible thin film layer and the conductive circuit layer thereon by using the flexible support plate, thereby facilitating subsequent cutting operations.

[0054] The flexible support plate in the embodiment of the present application can be made of polyethylene or polyurethane. While ensuring the support performance of the flexible support plate, it also has the characteristics of good flexibility, high strength, wear resistance, etc. The thickness of the flexible support plate is generally 0.1 mm to 0.8 mm. As an example, the thickness of the flexible support plate is 0.18 mm, 0.2 mm, 0.22 mm, 0.25 mm, 0.3 mm, 0.35 mm, or 0.4 mm.

[0055] The Young's modulus range of the flexible thin film layer 10 in the embodiment of the present application is: 5×10^9 N / m 2 to 10×10^9 N / m 2 . As an example, the Young's modulus of the flexible thin film layer 10 is 5.1×10^9 N / m 2 、5.3×10^9 N / m 2 、5.5×10^9 N / m 2 、5.8×10^9 N / m 2 、6×10^9 N / m 2 、6.2×10^9 N / m 2 、6.5×10^9 N / m 2 、6.7×10^9 N / m 2 、or 7×10^9 N / m 2 、7.4×10^9 N / m 2 、7.8×10^9 N / m 2 、8×10^9 N / m 2 、8.3×10^9 N / m 2 、8.5×10^9 N / m 2 、9×10^9 N / m 2 、9.5×10^9 N / m 2, 9.8×10^9 N / m 2 etc.

[0056] In the embodiments of the present application, the Young's modulus of the flexible support plate is greater than that of the flexible thin film layer. The range of the Young's modulus of the flexible support plate can be 6×10^9 N / m 2 to 20×10^9 N / m 2 . By selecting a flexible support plate with an appropriate Young's modulus, when deforming (such as folding) the electronic device of the embodiments of the present application, it can ensure that the flexible support plate has sufficient elasticity for deformation, making the structure of the electronic device more stable.

[0057] The thermal expansion coefficient range of the flexible thin film layer in the embodiments of the present application is 0.5 - 5 per million per degree Celsius. As an example, the thermal expansion coefficient of the flexible thin film layer is 0.6 per million per degree Celsius, 0.8 per million per degree Celsius, 1 per million per degree Celsius, 1.2 per million per degree Celsius, 1.5 per million per degree Celsius, 1.7 per million per degree Celsius, 2 per million per degree Celsius, 2.2 per million per degree Celsius, 2.5 per million per degree Celsius, 2.8 per million per degree Celsius, 3 per million per degree Celsius, 3.3 per million per degree Celsius, 3.5 per million per degree Celsius, 3.9 per million per degree Celsius, 4.2 per million per degree Celsius, 4.6 per million per degree Celsius, or 4.8 per million per degree Celsius, etc.

[0058] To ensure that other structural layers can be better formed on the flexible thin film layer, the surface roughness range of the flexible thin film layer is: 0.1 nm - 1 nm. As an example, the surface roughness of the flexible thin film layer is 0.2 nm, 0.3 nm, 0.4 nm, 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, or 0.9 nm, etc.

[0059] Step 105, cutting the stacked structure to form a plurality of circuit units.

[0060] Separate the flexible thin film from the glass, attach the flexible thin film layer to the flexible support plate to form a stacked structure, and cut the stacked structure into circuit units. In the embodiments of the present application, the flexible thin film is mechanically separated from the glass as a whole, the flexible thin film layer is attached to the flexible support plate, and then cut into corresponding circuit units, for example, by using laser cutting. By attaching the flexible thin film layer to the flexible support plate, when cutting the stacked structure, the flexible support plate can provide tension for the flexible thin film layer to better protect the conductive circuit layer, preventing the flexible thin film layer from wrinkling during cutting and thus damaging the conductive circuit layer, greatly improving its yield rate.

[0061] In the embodiments of the present application, by providing a flexible support plate, the flexible thin film layer and the conductive circuit layer can be supported. In this way, multiple electronic devices can be arranged on the flexible support plate in various set manners, so that the multiple electronic devices are packaged as a single packaging unit. This not only facilitates the transportation of the electronic devices but also protects the electronic devices. In this way, the control elements can be bonded in units of the entire packaging unit, thereby improving the bonding efficiency. After the user obtains the electronic devices in units of the packaging unit, the corresponding electronic devices can be cut out from the packaging unit according to the usage requirements. And it can be determined whether to separate the flexible support plate from the electronic device as needed. The embodiments of the present application support separating the flexible support plate in units of the entire packaging unit, and the separation efficiency of the flexible support plate is higher.

[0062] In the embodiments of the present application, before forming the conductive circuit layer on the flexible thin film layer, the preparation method further includes: forming a waterproof layer on the flexible thin film layer. The thickness of the waterproof layer is generally 20 nanometers to 500 nanometers, and it is coated on the flexible thin film layer through a sputtering manufacturing process. The material of the waterproof layer generally uses a silicon nitride thin film (SiNx) material, or a gate-silicon nitride (G-SiNx), etc. In another embodiment, the waterproof layer can also be a waterproof film layer directly attached to the flexible thin film layer, avoiding the above sputtering process.

[0063] In the embodiments of the present application, after forming the conductive circuit layer on the flexible thin film layer, the preparation method further includes: forming an insulating layer on the conductive circuit layer. Insulating ink is coated on the conductive circuit layer to form an insulating layer, which is coated on the conductive circuits, control elements, and glass substrates that do not need to be welded, aiming to protect the conductive circuit patterns formed on the glass substrate in the long term. The insulating ink is coated on the conductive circuit layer through manufacturing processes such as screen printing of the ink to form an insulating layer. As an example, the main components of the insulating ink in the embodiments of the present application include: epoxy modified resin, thermosetting epoxy resin, photoinitiator, extender pigment, coloring pigment, additives, and solvent. The extender pigment is mainly composed of at least one of salts of barium, calcium, magnesium, or aluminum, oxides of silicon or aluminum, etc.

[0064] Figure 2 is a schematic diagram of the preparation process of the electronic device shown in an embodiment of the present application, as Figure 2As shown in the figure, the manufacturing process of the electronic device according to the embodiment of the present application includes: cleaning the glass substrate 15, coating PI on one side of the glass substrate to form a flexible thin film layer 10; checking the coating effect of the flexible thin film layer 10 by visual inspection or the like to determine whether re - coating is required. After cleaning the coated flexible thin film layer 10, baking is carried out. For cleaning, a brush can be used to roll on the surface of the flexible thin film layer 10 to remove particulate matter, and then the liquid spraying method is used to remove fine particles on the surface of the flexible thin film layer again to ensure the cleanliness of the surface of the flexible thin film layer 10. After the surface of the flexible thin film layer 10 is dried, through the sputtering manufacturing process, a silicon nitride thin film or gate - silicon nitride is coated on the flexible thin film layer to form a waterproof layer, and the thickness of the waterproof layer is generally 20 nanometers to 500 nanometers. A conductive material is sputtered on the waterproof layer to form a conductive material layer 11. The material of the conductive material layer 11 can be at least one or a superposition of several of aluminum, molybdenum, silver, chromium, nickel, titanium, and copper, or other conductive materials such as graphene, metal oxides, etc. The thickness of the conductive material layer 11 is 200 - 3000 nanometers. A corresponding conductive circuit is made on the conductive material layer 11, that is, wire arrangement is carried out. Specifically, the panel TFT yellow light process is used, and then through processes such as cleaning, photoresist coating, exposure, development, etching, and stripping, it is processed into a conductive circuit with a line width of 1.5 - 20. After the circuit is made, electrical full inspection is carried out to determine whether the conductive circuit of the conductive material layer is normal. An insulating ink is coated on the conductive line layer through the screen printing process or the like to form an insulating layer, which is coated on the conductive lines, control components, and the glass substrate 15 that do not need to be welded. The purpose is to protect the conductive line pattern formed on the glass substrate 15 in the long term. Inspection is carried out through visual inspection or the like to determine whether the insulating layer covers all areas of the conductive line layer. At least one control component 13 such as an IC is bonded to the flexible thin film so that the control component such as an IC is electrically connected to the conductive lines of the conductive line layer 11. The conductive line layer 11 with the bonded IC is subjected to glue - dot protection treatment, that is, a protective glue is applied to the surface of the conductive line layer, cured to form a protective film, to protect the circuit board from being scratched or damaged, improve its water - resistance, earthquake - resistance, corrosion - resistance, etc., and increase the mechanical strength and connection stability of the circuit board. Electrical full inspection is carried out on the conductive line layer 11 after the glue - dot protection treatment to ensure that the conductive lines can work normally. The flexible thin film layer 10 and the glass substrate 15 are separated, and the flexible thin film layer 10 is attached to a flexible support plate 14 to form a laminated structure to support the flexible thin film layer. Then, the flexible thin film layer 10 provided with the flexible support plate 14 is cut to form a plurality of corresponding electronic devices, realizing panel - level packaging. After packaging, it can be transported and sold.

[0065] For the manufacturing method of the electronic device according to the embodiment of the present application, before separating the flexible thin film layer from the glass substrate, the following processing steps are further included:

[0066] At least one control element is disposed on the flexible film, and the control element is used for electrically connecting with the conductive circuit. The circuit unit after cutting includes the control element. The control element herein includes various control chips, control circuits, Field Programmable Gate Array (FPGA), Micro Controller Unit (MCU), and other elements. As an example, the anisotropic conductive film (ACF) process can be used to bond the control element to the conductive circuit layer; or the control element can be bonded to the conductive circuit layer through the ACF pressing process, or the control element can also be bonded to the conductive circuit layer by means of inner lead bonding (ILB).

[0067] As another implementation manner, after the flexible film layer is attached to the flexible support plate, at least one control element is disposed on the flexible film, and the control element is used for electrically connecting with the conductive circuit. The electronic device of the embodiment of the present application includes one of the circuit units after cutting and at least one of the control elements.

[0068] As a third implementation manner, after the stacked structure is cut into multiple circuit units, the control element can be further disposed on the circuit unit.

[0069] In the embodiment of the present application, the control element is disposed on the flexible film before the flexible film layer is separated from the glass substrate. Since a plurality of matrix-type conductive circuit units have been formed on the flexible film, therefore, one conductive circuit unit can be electrically connected to one control element, or can be connected to a plurality of control elements to form an independent circuit entity, and a plurality of such independent circuit entities are arranged in a matrix on the flexible film layer. As Figure 3 shown, it shows a schematic structural diagram of the panel-level electronic device of the embodiment of the present application. After a plurality of control elements 13 are bonded to the conductive circuit layer 11 in the embodiment of the present application, a panel-level electronic device is formed. Cutting and packaging can be performed based on this panel-level electronic device. As Figure 5 shown, the cut electronic device can be encapsulated in an encapsulation strip to facilitate subsequent processing or use. Those skilled in the art should understand that the cutting and packaging of the electronic device can also be completed in other ways.

[0070] In the technical solution of the embodiment of the present application, during the preparation process of the electronic device, first, a flexible support plate is attached to the glass substrate. After separating the flexible film layer from the rigid substrate, it is attached to the flexible support plate through the flexible film layer. When cutting the laminated structure, the flexible support plate can provide tension for the flexible film layer to better protect the conductive circuit layer, prevent the flexible film layer from wrinkling during cutting, and thus damage the conductive circuit layer, greatly improving its yield rate.

[0071] The line width of the conductive circuit in the conductive circuit layer of the embodiment of the present application can be between 1.5 micrometers and 20 micrometers, thereby reducing the area of COF (abbreviation for Chip On Film) and saving costs.

[0072] Figure 4 It is a schematic diagram of the composition structure of the electronic device shown in an embodiment of the present application. As Figure 4 shown, the electronic device of the embodiment of the present application includes:

[0073] A flexible support plate 14; the flexible support plate 14 of the embodiment of the present application can be made of polyethylene or polyurethane materials. While ensuring the support performance of the flexible support plate 14, it also has the characteristics of good flexibility, high strength, wear resistance, etc. The thickness of the flexible support plate is generally 0.1 mm to 0.8 mm. As an example, the thickness of the flexible support plate can be 0.18 mm, 0.2 mm, 0.22 mm, 0.25 mm, 0.3 mm, 0.35 mm, or 0.4 mm.

[0074] A flexible film layer 10, attached to the surface of the flexible support plate 14; the flexible film can be at least one of the following materials: polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), ultra-thin glass (UTG), etc. The selected flexible film has a service temperature range of -60°C to 170°C and has high insulation performance. The thickness of the flexible film in the embodiment of the present application is 10 micrometers - 200 micrometers. As an example, the thickness of the flexible film can be 12 micrometers, 15 micrometers, 20 micrometers, 30 micrometers, 50 micrometers, 80 micrometers, 100 micrometers, 120 micrometers, 150 micrometers, or 180 micrometers, etc.

[0075] A conductive circuit layer 11 is formed on the flexible film layer 10. The conductive circuit layer 11 is used for bonding with at least one control element. The thickness range of the conductive material layer 11 is from 200 nanometers to 3000 nanometers. As an example, the thickness of the conductive material layer 11 can be 250 nanometers, 300 nanometers, 500 nanometers, 800 nanometers, 1000 nanometers, 1200 nanometers, 1500 nanometers, 1600 nanometers, 1900 nanometers, 2000 nanometers, 2300 nanometers, 2500 nanometers, 2700 nanometers, or 2900 nanometers, etc.

[0076] As Figure 4 shown, the electronic device according to the embodiment of the present application further includes:

[0077] At least one control element is formed on the flexible film. The control element is electrically connected to the conductive circuit. The control element includes an IC circuit 13. As an example, the control element according to the embodiment of the present application includes various control chips, control circuits, FPGAs, MCUs and other elements. As an example, the control element can be bonded to the conductive circuit layer by using the ACF process; or the control element can be bonded to the conductive circuit layer by the ACF pressing process.

[0078] As Figure 4 shown, the electronic device according to the embodiment of the present application further includes:

[0079] A waterproof layer ( Figure 4 not shown in the figure) is provided on the flexible film layer 10. The waterproof layer is provided between the flexible film layer 10 and the conductive circuit layer 11. The thickness of the waterproof layer according to the embodiment of the present application is generally from 20 nanometers to 500 nanometers, and is coated on the flexible film layer by a sputtering manufacturing process. The material of the waterproof layer generally uses a silicon nitride film (SiNx) material, or a gate-silicon nitride (G-SiNx), etc.

[0080] As Figure 4 shown, the electronic device according to the embodiment of the present application further includes: an insulating layer ( Figure 4 not shown in the figure). Insulating ink is coated on the conductive circuit layer 11 to form an insulating layer, so as to coat the conductive circuits, control elements and flexible film layer 10 that do not need to be welded, so as to protect the conductive circuit pattern formed on the flexible film layer 10. The insulating ink as the insulating layer is coated on the conductive circuit layer 11 by manufacturing processes such as ink printing or screen printing. In other embodiments, the insulating layer can also be other materials.

[0081] The Young's modulus range of the flexible film layer according to the embodiment of the present application is: 5×10^9 N / m 2 to 10×10^9 N / m 2 . As an example, the Young's modulus of the flexible film layer is 5.1×10^9 N / m 2, 5.3×10^9 N / m 2 , 5.5×10^9 N / m 2 , 5.8×10^9 N / m 2 , 6×10^9 N / m 2 , 6.2×10^9 N / m 2 , 6.5×10^9 N / m 2 , 6.7×10^9 N / m 2 , or 7×10^9 N / m 2 , 7.4×10^9 N / m 2 , 7.8×10^9 N / m 2 , 8×10^9 N / m 2 , 8.3×10^9 N / m 2 , 8.5×10^9 N / m 2 , 9×10^9 N / m 2 , 9.5×10^9 N / m 2 , 9.8×10^9 N / m 2 etc.

[0082] The coefficient of thermal expansion of the flexible film layer in the embodiments of the present application ranges from 0.5 to 5 ppm / °C. As an example, the coefficient of thermal expansion of the flexible film layer is 0.6 ppm / °C, 0.8 ppm / °C, 1 ppm / °C, 1.2 ppm / °C, 1.5 ppm / °C, 1.7 ppm / °C, 2 ppm / °C, 2.2 ppm / °C, 2.5 ppm / °C, 2.8 ppm / °C, 3 ppm / °C, 3.3 ppm / °C, 3.5 ppm / °C, 3.9 ppm / °C, 4.2 ppm / °C, 4.6 ppm / °C, or 4.8 ppm / °C, etc. Selecting a flexible film layer with an appropriate coefficient of thermal expansion is beneficial to the formation of the conductive circuit layer on the flexible film layer. During the lithography process of forming the conductive circuit in the conductive circuit layer, damage to the flexible film layer can be further prevented.

[0083] The surface roughness of the flexible film layer in the embodiments of the present application ranges from 0.1 nm to 1 nm. As an example, the surface roughness of the flexible film layer is 0.2 nm, 0.3 nm, 0.4 nm, 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, or 0.9 nm, etc.

[0084] The line width of the conductive circuit in the conductive line layer 11 of the embodiment of the present application is 1.5 micrometers to 20 micrometers. As an example, the line width of the conductive circuit can be 1.8 micrometers, 2 micrometers, 3 micrometers, 5 micrometers, 7 micrometers, 10 micrometers, 13 micrometers, 15 micrometers, or 19 micrometers, etc. The line pitch range of the conductive lines can be between 2 - 30 micrometers.

[0085] Figure 6 Another schematic structural diagram of the electronic device shown in an embodiment of the present application is as follows Figure 6 As shown, the electronic device of the embodiment of the present application includes:

[0086] A glass substrate 15;

[0087] A flexible support plate 14, disposed on the glass substrate;

[0088] A flexible thin film layer 10, attached to the surface of the flexible support plate;

[0089] A conductive line layer 11, formed on the flexible thin film layer 10, and the conductive line layer 11 is used for binding with at least one electronic component.

[0090] This electronic device, compared with Figure 4 the structure of the electronic device shown, also has a glass substrate 15 on the other surface of the flexible support plate 14. That is, the electronic device of the embodiment of the present application can also be an electronic device with a glass substrate 15, and other structures are exactly the same as Figure 4 the structure shown. The glass substrate 15 is separated from the flexible support plate 14 when it needs to be removed. Compared with Figure 4 the structure shown, this structure of the electronic device can omit the step of detaching the flexible thin film layer 10 from the glass substrate 15, preventing damage to the flexible thin film layer 10 when the flexible thin film layer 10 is peeled off from the glass substrate 15. This structure can directly remove the glass substrate 15 when necessary. Figure 6 The electronic device shown can also perform panel-level packaging to be suitable for different electronic product processing processes.

[0091] In the electronic device of the embodiment of the present application, the IC chip and the cable structure are electrically connected to the conductive circuit of the conductive line layer 11. By providing the flexible support plate 14, the IC chip and the cable structure can be disposed at the end of the conductive line layer 11, and this end can be bent to adapt to the frame size for subsequent packaging of the electronic device of the embodiment of the present application.

[0092] In the electronic device according to the embodiment of the present application, in the traditional production method, after the IC chip is bonded to the conductive circuit layer 11, the glass substrate is carried and cut, and then the flexible film layer 10 is separated from the glass substrate, which results in low production efficiency. In the embodiment of the present application, first, after the flexible film layer 10 is separated from the glass substrate, the flexible film layer 10 is attached to the surface of the flexible support plate 14. By attaching the flexible support plate 14 to the back of the flexible film, when the laminated structure is cut, the flexible support plate 14 can provide tension for the flexible film layer 10 to better protect the conductive circuit layer, prevent the flexible film layer 10 from wrinkling during cutting and thus damage the conductive circuit layer 11, greatly improving the yield rate.

[0093] It can be understood that the circuit unit provided by the embodiment of the present application is a single product after cutting. The electronic device includes the circuit unit and at least one control element. The electronic device is a semi-finished product and is a part of a terminal product (such as an electronic device).

[0094] The embodiment of the present application also records an electronic device, and the electronic device includes the electronic device described in the foregoing embodiment. The electronic device includes but is not limited to mobile phones, PADs, game consoles, laptop computers, televisions, etc.

[0095] Figure 5 It is a schematic structural diagram of an electronic package according to an embodiment of the present application. As Figure 5 shown, the embodiment of the present application also records an electronic package, including:

[0096] A package housing 20 is provided with a plurality of accommodation cavities 21, and the package housing 20 is in a strip shape;

[0097] A plurality of the foregoing electronic devices are disposed in the accommodation cavities 21. It can be understood that the entire electronic device can be disposed in the accommodation cavity 21, or a part of the electronic device can be accommodated in the accommodation cavity 21 to match the subsequent processing of the electronic device.

[0098] The electronic package according to the embodiment of the present application supports packaging a plurality of electronic devices as a unit into the corresponding package housing 20.

[0099] It should be understood that various forms of the processes shown above can be used, steps can be reordered, added or deleted. For example, the steps described in the present disclosure can be executed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution disclosed in the present application can be achieved. No limitation is made herein.

[0100] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the description of this application, "a plurality of" means two or more unless otherwise specifically defined.

[0101] Furthermore, "formed on" in this application may mean "directly formed on", or may also mean "indirectly formed on". That is, for example, if A is formed on B, it may be that A is directly formed on B, or there may be other structures between A and B. Therefore, "formed on" in this application does not merely mean directly formed on.

[0102] As described above, the above are only specific embodiments of this application, but the protection scope of this application is not limited thereto. Any person skilled in the art within the technical scope disclosed by this application can easily think of changes or substitutions, which should all be covered within the protection scope of this application. Therefore, the protection scope of this application shall be subject to the protection scope of the claims.

Claims

1. An electronic device, characterized in that: The electronic device comprises: Flexible support plate; A flexible film layer is attached to the surface of the flexible support plate; The conductive circuit layer is formed on the flexible film layer, and the conductive circuit layer is used to be bound with at least one control element.

2. The electronic device according to claim 1, characterized in that: The electronic device further comprises: At least one control element is formed on the flexible film, and the control element is electrically connected to the conductive circuit.

3. The electronic device according to claim 1, characterized in that: The electronic device further comprises: The waterproof layer is arranged on the flexible film layer, and the conductive circuit layer is formed on the waterproof layer.

4. The electronic device according to claim 1, characterized in that: The line width of the conductive circuit in the conductive circuit layer ranges from 0.5 micrometers to 20 micrometers.

5. The electronic device according to claim 1, characterized in that: The Young's modulus of the flexible support plate is greater than the Young's modulus of the flexible film layer.

6. The electronic device according to claim 1 or 5, characterized in that: The Young's modulus of the flexible film layer is in the range of: 5×10^9N / m 2 Up to 10×10^9N / m 2 .

7. The electronic device according to claim 1, characterized in that: The surface roughness of the flexible film layer is in the range of 0.1 nm to 1 nm.

8. An electronic device, characterized in that: The electronic device comprises: Hard substrate; A flexible support plate, arranged on the hard substrate; A flexible film layer is attached to the surface of the flexible support plate; The conductive circuit layer is formed on the flexible film layer, and the conductive circuit layer is used to be bound with at least one electronic component.

9. An electronic package, comprising: The packaging shell is provided with a plurality of accommodating cavities, and the packaging shell is in a strip shape; A plurality of electronic devices according to any one of claims 1 to 8, wherein the electronic devices are arranged in the accommodating cavity.

10. An electronic device comprising the electronic package according to claim 9.

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