Dry etching equipment
By using a gas sprayer in the dry etching equipment to pass purge gas into the slit valve and process chamber, the wafer contamination problem caused by gas diffusion between process chambers is solved, and the effect of reducing wafer electrical damage and particle contamination is achieved.
Patent Information
- Application Number
- CN202422174947.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-04
- Publication Date
- 2025-07-04
- Estimated Expiration
- 2034-09-04
AI Technical Summary
In dry etching equipment, gas diffusion between multiple process chambers leads to wafer contamination and electrical damage, and the prior art is difficult to effectively prevent gases from diffusion between each other.
When the slit valve is in an open state, a gas sprayer is used to pass purge gas into the slit valve and process chamber to prevent the residual gas in the process chamber from diffusing into the transmission chamber, and the diffused gas is blown back into the process chamber through the gas sprayer to reduce the mutual diffusion of gases.
It effectively prevents wafer pollution and electrical damage, reduces particle pollution, and reduces the risk of pollution to wafers.
Smart Images
Figure CN223066114U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, and particularly relates to a dry etching device. Background Art
[0002] In current semiconductor process equipment, such as dry etching equipment, wafers are transferred between a transfer chamber and multiple process chambers. Generally, one transfer chamber of a dry etching equipment corresponds to multiple process chambers, that is, multiple process chambers share the same transfer chamber. Multiple said process chambers are respectively connected to the transfer chamber through a slit valve. When the slit valve is in the open state, the process chamber is communicated with the transfer chamber, so as to realize the transfer of wafers. However, since the process technologies executed by each process chamber are different, and since there will be some residual gases in the process chamber after the wafer completes the operation in the process chamber, when the slit valve is in the open state, the residual gases in the process chamber will diffuse into the transfer chamber. If the processes executed by multiple process chambers are different, then the residual gases in multiple process chambers will be mixed through the transfer chamber, which will contaminate the wafer, and further cause electrical damage and particle contamination of the wafer. Summary of the Utility Model
[0003] The purpose of the utility model is to provide a dry etching device to reduce or avoid the mutual diffusion of gases between different process chambers, thereby reducing or avoiding the risk of wafer contamination.
[0004] To achieve the above purpose, the utility model provides a dry etching device, including:
[0005] A transfer chamber and multiple process chambers, multiple said process chambers are respectively connected to the transfer chamber through a slit valve. Wherein, when the slit valve is in the open state, the process chamber is conducted with the transfer chamber, and when the slit valve is in the closed state, the process chamber is isolated from the transfer chamber;
[0006] A gas sprayer, the gas sprayer is arranged on the side of the slit valve close to the transfer chamber, and the gas sprayer faces the slit valve. The gas sprayer is used to introduce a purge gas into the slit valve and the process chamber when the slit valve is in the open state.
[0007] Optionally, in the dry etching device, the gas sprayer includes an inlet gas pipeline and multiple nozzles arranged on the inlet gas pipeline, and each said nozzle is communicated with the inlet gas pipeline.
[0008] Optionally, in the dry etching device, all the nozzles are arranged in a row on the inlet gas pipeline, and adjacent nozzles are aligned, or all the nozzles are arranged in two rows on the inlet gas pipeline, and the nozzles in different rows are aligned.
[0009] Optionally, in the dry etching equipment, all the nozzles are arranged in a row on the inlet gas pipeline, and adjacent nozzles are arranged staggeredly. Alternatively, all the nozzles are arranged in two rows on the inlet gas pipeline, and the nozzles in different rows are arranged staggeredly.
[0010] Optionally, in the dry etching equipment, each nozzle is fixedly arranged on the inlet gas pipeline.
[0011] Optionally, in the dry etching equipment, each nozzle is rotatably arranged on the inlet gas pipeline.
[0012] Optionally, in the dry etching equipment, the cross-sectional shape of each nozzle is a flared shape. Wherein, each nozzle has an inlet gas port and an outlet gas port arranged oppositely, the diameter of the outlet gas port is smaller than that of the inlet gas port, and the outlet gas port faces the slit valve to provide purge gas to the slit valve and the process chamber.
[0013] Optionally, in the dry etching equipment, the dry etching equipment further includes a gas disk and a connecting pipeline. One end of the connecting pipeline is connected to the gas disk, and the other end is connected to the gas sprinkler. The gas disk is used to provide purge gas, and the purge gas enters the gas sprinkler through the connecting pipeline.
[0014] Optionally, in the dry etching equipment, the dry etching equipment further includes a first pneumatic valve and a mass flow controller arranged on the connecting pipeline. The first pneumatic valve is farther from the gas sprinkler than the mass flow controller, and the mass flow controller is used to regulate the flow rate of the purge gas.
[0015] Optionally, in the dry etching equipment, the dry etching equipment further includes a suction pump, an exhaust gas pipeline and a second pneumatic valve. The second pneumatic valve is arranged on the exhaust gas pipeline. One end of the exhaust gas pipeline is connected to the process chamber, and the other end is connected to the suction pump. The suction pump evacuates the process chamber through the exhaust gas pipeline to discharge the purge gas in the process chamber.
[0016] In the dry etching equipment provided by the present utility model, the dry etching equipment includes a transfer chamber and a plurality of process chambers. The plurality of process chambers are respectively connected to the transfer chamber through a slit valve. When the slit valve is in the open state, the process chamber is in communication with the transfer chamber; when the slit valve is in the closed state, the process chamber is isolated from the transfer chamber. A gas sprayer is provided on the side of the slit valve close to the transfer chamber, and the gas sprayer faces the slit valve. The gas sprayer is used to introduce a purge gas into the slit valve and the process chamber when the slit valve is in the open state. In this way, the residual gas diffused in the process chamber can be blown back into the process chamber, thereby preventing the residual gas in the process chamber from diffusing into the transfer chamber, reducing or avoiding the mutual diffusion of gases between different process chambers, thereby reducing or avoiding the risk of wafer contamination, and further reducing the electrical damage and particle contamination of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 is a schematic diagram of the principle of the dry etching equipment according to an embodiment of the present utility model;
[0018] Figure 2 is a schematic diagram of the principle of the dry etching equipment according to an embodiment of the present utility model when the slit valve is in the closed state;
[0019] Figure 3 is a schematic diagram of the principle of the dry etching equipment according to an embodiment of the present utility model when the slit valve is in the open state;
[0020] Figure 4 is a top view schematic diagram of the gas sprayer of the dry etching equipment according to an embodiment of the present utility model;
[0021] Figure 5 is a side view of the first gas sprayer of the dry etching equipment according to an embodiment of the present utility model;
[0022] Figure 6 is a side view of the second gas sprayer of the dry etching equipment according to an embodiment of the present utility model;
[0023] Figure 7 is a side view of the third gas sprayer of the dry etching equipment according to an embodiment of the present utility model;
[0024] Figure 8 is a side view of the fourth gas sprayer of the dry etching equipment according to an embodiment of the present utility model;
[0025] Figure 9 is a schematic diagram of the principle of the gas disk of the dry etching equipment according to an embodiment of the present utility model;
[0026] In the figure,
[0027] 100 - Transfer Chamber; 200 - Process Chamber; 300 - Slit Valve; 310 - Valve Body; 320 - Valve; 400 - Gas Sprayer; 410 - Inlet Pipeline; 420 - Nozzle; 500 - Gas Plate; 510 - Connecting Pipeline; 520 - First Pneumatic Valve; 530 - Mass Flow Controller; 600 - Exhaust Pump; 610 - Exhaust Pipeline; 620 - Second Pneumatic Valve; 700 - Robot Arm; 710 - Electrostatic Chuck; 800 - Wafer. Detailed Embodiment
[0028] The following further describes the dry etching equipment proposed by the present utility model in detail with reference to the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present utility model will be clearer. It should be noted that the drawings are all in a very simplified form and use non-precise scales, only for conveniently and clearly assisting in explaining the purpose of the embodiments of the present utility model.
[0029] As used in the present utility model, the singular forms "a", "an" and "the" include plural objects. The term "or" is generally used in the sense of including "and / or". The term "several" is generally used in the sense of including "at least one". The term "at least two" is generally used in the sense of including "two or more". In addition, the terms "first", "second", "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first", "second", "third" may explicitly or implicitly include one or at least two of such features.
[0030] Figure 1 is a schematic diagram of the principle of the dry etching equipment according to an embodiment of the present utility model. As Figure 1 shown, the present utility model provides a dry etching equipment, including a transfer chamber 100, a plurality of process chambers 200 and a gas sprayer 400.
[0031] In this embodiment, the transfer chamber 100 is used to transfer the wafer 800 to the process chamber 200, and a plurality of the process chambers 200 are respectively connected to the transfer chamber 100 through a slit valve 300. That is to say, a plurality of process chambers 200 can share the same transfer chamber 100 to realize the transfer of the wafer 800. For example, 4 to 6 process chambers can share 1 transfer chamber. Among them, each process chamber 20 can perform different wafer process technologies.
[0032] Figure 2 is a schematic diagram of the principle of the dry etching equipment according to an embodiment of the present utility model when the slit valve 300 is in a closed state. AsFigure 2 As shown, when the slit valve 300 is in the closed state, the process chamber 200 is isolated from the transfer chamber 100.
[0033] Figure 3 It is a schematic diagram of the principle when the slit valve 300 of the dry etching equipment in the embodiment of the present invention is in the open state. As Figure 3 shown, when the slit valve 300 is in the open state, the process chamber 200 is in communication with the transfer chamber 100. Wherein, a channel is provided in the slit valve 300 to enable the process chamber 200 to be in communication with the transfer chamber 100.
[0034] Specifically, as Figure 2 and Figure 3 shown, the slit valve 300 includes a valve body 310 and a valve 320 located on the valve body 310. The valve 320 slidably conducts the process chamber 200 and the transfer chamber 100, that is, when the slit valve 300 is in the open state, to realize the transfer of the wafer 800, so as to transfer the wafer 800 from the process chamber 200 to the transfer chamber 100, or transfer the wafer 800 from the transfer chamber 100 to the process chamber 200. After the transfer of the wafer 800 is completed, the valve 320 slidably closes the channel between the process chamber 200 and the transfer chamber 100, that is, when the slit valve 300 is in the closed state, so that the process chamber 200 is isolated from the transfer chamber 100. Wherein, the specific structure of the slit valve 300 is the prior art and will not be elaborated here.
[0035] Refer to Figure 1 and in combination with Figure 3 shown, the gas sprinkler 400 is arranged on the side of the slit valve 300 close to the transfer chamber 100, and the gas sprinkler 400 faces the slit valve 300. The gas sprinkler 400 is used to introduce purge gas into the slit valve 300 and the process chamber 200 when the slit valve 300 is in the open state. In this way, the gas diffused in the process chamber 200 can be blown back into the process chamber 200, thereby preventing the residual gas in the process chamber 200 from diffusing into the transfer chamber 100, reducing or avoiding the mutual diffusion of gases between different process chambers 200, thereby reducing or avoiding the risk of wafer contamination, and further reducing the electrical damage and particle contamination of the wafer.
[0036] Figure 4 It is a top view schematic diagram of the gas sprinkler 400 of the dry etching equipment in the embodiment of the present invention. Refer to Figure 4 and in combination with Figure 1As shown, the gas sprayer 400 can be fixed within the transfer chamber 100, for example, it can be fixed on the inner sidewall of the transfer chamber 100. The gas sprayer 400 includes an intake pipe (Tubebar) 410 and a plurality of nozzles 420 provided on the intake pipe 410. Each nozzle 420 is in communication with the intake pipe 410, and each nozzle 420 faces the slit valve 300 to introduce the purge gas into the slit valve 300 and the process chamber 200.
[0037] When the slit valve 300 is in the open state, the intake pipe 410 is introduced with the purge gas. The purge gas enters the nozzle 420 through the intake pipe 410 and is introduced into the slit valve 300 and the process chamber 200 through the nozzle 420, thereby preventing the residual gas in the process chamber 200 from entering the transfer chamber 100, and can purge and remove the particles accumulated on the housing of the slit valve 300 to avoid the particles from entering the transfer chamber 100, thus avoiding contaminating the wafer 800.
[0038] In this embodiment, air outlet holes are provided on the sidewall of the intake pipe 410 close to the slit valve 300. The air outlet holes can be through holes, that is, penetrating the sidewall of the intake pipe 410. The number of air outlet holes corresponds to the number of nozzles 420 provided on the intake pipe 410, and the nozzles 420 are installed on the intake pipe 410 through the air outlet holes.
[0039] Exemplarily, each nozzle 420 is fixedly arranged on the intake pipe 410. For example, each nozzle 420 can be fixed on the intake pipe 410 by welding.
[0040] Alternatively, each nozzle 420 is rotatably arranged on the intake pipe 410. That is, the nozzle 420 can rotate relative to the intake pipe 410, and the rotation angle of the nozzle 420 can be 0° to 30°. In this way, the outlet angle of the purge gas can be adjusted.
[0041] As Figure 4 shown, the cross-sectional shape of each nozzle 420 is a flared shape. In this way, the purge speed of the purge gas can be increased. Preferably, each nozzle 420 has an intake port and an outlet port arranged oppositely. The purge gas enters the nozzle 420 from the intake port of the nozzle 420 and is introduced into the slit valve 300 and the process chamber 200 from the outlet port. The diameter of the outlet port of the nozzle 420 is smaller than that of the intake port, and the nozzle 420 is in communication with the intake pipe 410 through the intake port. The outlet port of the nozzle 420 faces the slit valve 300 to provide the purge gas to the slit valve 300 and the process chamber 200. Among them, the direction of the purge gas is as Figure 4 shown by the arrow in
[0042] Figure 5 is a side view of the first gas sprayer of the dry etching equipment according to an embodiment of the present invention. As Figure 5 shown, in one embodiment, the first gas sprayer 400 is adopted. All the nozzles 420 of the first gas sprayer 400 are arranged in a row on the intake pipeline 410, and adjacent nozzles 420 are aligned, so that the purge gas can be uniformly introduced into the process chamber 200.
[0043] Figure 6 is a side view of the second gas sprayer of the dry etching equipment according to an embodiment of the present invention. As Figure 6 shown, in one embodiment, the second gas sprayer 400 is adopted. All the nozzles 420 are arranged in a row on the intake pipeline 410, and adjacent nozzles 420 are offset, so that the purge gas can be introduced into the process chamber 200 from different positions.
[0044] Figure 7 is a side view of the third gas sprayer of the dry etching equipment according to an embodiment of the present invention. As Figure 7 shown, in one embodiment, the third gas sprayer 400 is adopted. All the nozzles 420 are arranged in two rows on the intake pipeline 410, and adjacent nozzles 420 are aligned. In this way, the purge speed of the purge gas can be increased. The number of nozzles 420 in each row is the same.
[0045] Figure 8 is a side view of the fourth gas sprayer of the dry etching equipment according to an embodiment of the present invention. As Figure 8 shown, in one embodiment, the fourth gas sprayer 400 is adopted. All the nozzles 420 are arranged in two rows on the intake pipeline 410, and the nozzles 420 in different rows are offset. The number of nozzles 420 in each row is the same.
[0046] Figure 9 is a schematic diagram of the principle of the gas disk of the dry etching equipment according to an embodiment of the present invention. As Figure 9 shown, the dry etching equipment further includes a connecting pipeline 510 and a gas disk 500. One end of the connecting pipeline 510 is connected to the gas disk 500, and the other end is connected to the gas sprayer 400. The gas disk 500 is used to provide purge gas, and the purge gas enters the gas sprayer 400 through the connecting pipeline 510. The connecting pipeline 510 can be communicated with the intake pipeline 410. The purge gas enters the intake pipeline 410 through the connecting pipeline 510 and enters the nozzle 420 through the intake pipeline 410.
[0047] Continue to refer to Figure 9As shown, the dry etching equipment further includes a mass flow controller (MFC, Mass Flow Controller) 530. The mass flow controller 530 is disposed on the connection pipeline 510. The mass flow controller 530 is used to regulate the flow rate of the purge gas, so as to regulate the flow rate of the purge gas in the connection pipeline 510, thereby regulating the flow rate of the purge gas of the gas sprinkler 400. Among them, the purge gas can be, for example, nitrogen (N2), and the flow rate of the purge gas can be 1000 sccm to 5000 sccm.
[0048] As Figure 9 shown, the dry etching equipment further includes a first pneumatic valve 520 disposed on the connection pipeline 510. The first pneumatic valve 520 is farther from the gas sprinkler 400 than the mass flow controller 530. Among them, both the first pneumatic valve 520 and the mass flow controller 530 are disposed in the gas disk 500.
[0049] After the process of the wafer 800 in the process chamber 200 is completed, the first pneumatic valve 520 is in an open state to enable the purge gas in the gas disk 500 to enter the connection pipeline 510, and the purge gas enters the gas sprinkler 400 through the connection pipeline 510. At the same time, the slit valve 300 is in an open state to connect the transfer chamber 100 and the process chamber 200. At this time, the gas sprinkler 400 injects the purge gas into the slit valve 300 and the process chamber 200. In addition, the gas sprinkler 400 can also inject the purge gas into the slit valve 300 after the process of the wafer 800 in the process chamber 200 is completed and before the slit valve 300 is in an open state, so as to better prevent the gas in the process chamber 200 from diffusing into the transfer chamber 100.
[0050] In this embodiment, as Figure 1 shown, the dry etching equipment further includes a suction pump 600, an exhaust pipeline 610, and a second pneumatic valve 620. The second pneumatic valve 620 is disposed on the exhaust pipeline 610. One end of the exhaust pipeline 610 is connected to the process chamber 200, and the other end of the exhaust pipeline 610 is connected to the suction pump 600. When the second pneumatic valve 620 is in an open state, the suction pump 600 evacuates the process chamber 200 through the exhaust pipeline 610 to discharge the purge gas in the process chamber 200. When the second pneumatic valve 620 is in a closed state, the evacuation of the process chamber 200 is stopped. Among them, the exhaust pipeline 610 is disposed at the bottom of the process chamber 200, and an exhaust pipeline 610 is disposed at the bottom of each process chamber 200 to discharge the residual gas and purge gas in the process chamber 200.
[0051] In a further solution, the exhaust pipe 610, the air extraction pump 600 and the second pneumatic valve 620 may also be provided at the bottom of the transfer chamber 100 to discharge the residual gas and the purging gas in the transfer chamber 100, so as to avoid contamination of the wafer 800 in the transfer chamber 100 caused by the residual gas entering the transfer chamber 100.
[0052] In addition, as Figure 1 shown, the dry etching equipment of this embodiment further includes a robotic arm 700. The robotic arm 700 is disposed in the transfer chamber 100 and is used for picking up and placing the wafer 800, so as to realize the transfer of the wafer 800 between the process chamber 200 and the transfer chamber 100. An electrostatic chuck (ESC) 710 for carrying the wafer 800 is disposed in the process chamber 200, and the electrostatic chuck 710 sucks and holds the wafer 800 by the suction force generated by static charges. After the process of the wafer 800 in the process chamber 200 is completed, the wafer 800 is lifted (close to the top of the process chamber 200), the first pneumatic valve 520 is opened to allow the purging gas to enter the connecting pipe 510, and the mass flow regulator 530 is used to control the flow rate of the purging gas in the connecting pipe 510. The purging gas enters the gas sprinkler 400 through the connecting pipe 530. At the same time, the slit valve 300 is opened, that is, even when the slit valve 300 is in the open state, the gas sprinkler 400 supplies the purging gas to the slit valve 300 and the process chamber 200, and the robotic arm 700 enters the process chamber 200 to pick up the wafer 800, thus completing the transfer of the wafer.
[0053] In summary, in the dry etching equipment provided by the embodiment of the present invention, the dry etching equipment includes a transfer chamber and a plurality of process chambers. The plurality of process chambers are respectively connected to the transfer chamber through a slit valve. When the slit valve is in the open state, the process chamber is communicated with the transfer chamber. When the slit valve is in the closed state, the process chamber is isolated from the transfer chamber; a gas sprinkler is provided on the side of the slit valve close to the transfer chamber and faces the slit valve. The gas sprinkler is used to supply the purging gas to the slit valve and the process chamber when the slit valve is in the open state. In this way, the residual gas in the process chamber can be blown back into the process chamber, thereby preventing the residual gas in the process chamber from diffusing into the transfer chamber, reducing or avoiding gas cross-contamination between different process chambers, and further avoiding electrical damage and particle contamination of the wafers in the process chamber.
[0054] The above description is only a description of the preferred embodiment of the present invention, and does not limit the scope of the present invention in any way. Any changes and modifications made by those of ordinary skill in the art of the present invention according to the above disclosure are within the scope of protection of the claims.
[0055] It should also be recognized that although the present utility model has been disclosed above with preferred embodiments, the above embodiments are not intended to limit the present utility model. For any person skilled in the art, without departing from the scope of the technical solution of the present utility model, many possible changes and modifications can be made to the technical solution of the present utility model by using the technical content disclosed above, or it can be modified into equivalent embodiments with equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present utility model without departing from the content of the technical solution of the present utility model still belong to the scope protected by the technical solution of the present utility model.
Claims
1. A dry etching apparatus, characterized in that, Comprising: A transfer chamber and a plurality of process chambers, wherein the plurality of process chambers are respectively connected to the transfer chamber through a slit valve. When the slit valve is in the open state, the process chamber is in communication with the transfer chamber; when the slit valve is in the closed state, the process chamber is isolated from the transfer chamber. A gas sprayer, which is arranged on the side of the slit valve close to the transfer chamber and faces the slit valve. The gas sprayer is used to introduce purge gas into the slit valve and the process chamber when the slit valve is in the open state.
2. The dry etching apparatus according to claim 1, wherein The gas sprayer includes an inlet gas pipeline and a plurality of nozzles arranged on the inlet gas pipeline, and each nozzle is in communication with the inlet gas pipeline.
3. The dry etching apparatus according to claim 2, characterized in that All the nozzles are arranged in a single row on the inlet gas pipeline, and adjacent nozzles are aligned, or all the nozzles are arranged in two rows on the inlet gas pipeline, and the nozzles in different rows are aligned.
4. The dry etching apparatus according to claim 2, wherein All the nozzles are arranged in a single row on the inlet gas pipeline, and adjacent nozzles are offset, or all the nozzles are arranged in two rows on the inlet gas pipeline, and the nozzles in different rows are offset.
5. The dry etching apparatus according to any one of claims 2 to 4, characterized in that Each nozzle is fixedly arranged on the inlet gas pipeline.
6. The dry etching equipment according to any one of claims 2 to 4, characterized in that Each nozzle is rotatably arranged on the inlet gas pipeline.
7. The dry etching apparatus according to any one of claims 2 to 4, characterized in that The cross-sectional shape of each nozzle is trumpet-shaped. Each nozzle has an inlet and an outlet arranged oppositely. The diameter of the outlet is smaller than that of the inlet, and the outlet faces the slit valve to provide purge gas to the slit valve and the process chamber.
8. The dry etching equipment according to claim 1, wherein, The dry etching equipment further includes a gas disk and a connecting pipeline. One end of the connecting pipeline is connected to the gas disk, and the other end is connected to the gas sprayer. The gas disk is used to provide purge gas, and the purge gas enters the gas sprayer through the connecting pipeline.
9. The dry etching apparatus according to claim 8, wherein, The dry etching equipment further includes a first pneumatic valve and a mass flow controller arranged on the connecting pipeline. The first pneumatic valve is farther from the gas sprayer than the mass flow controller, and the mass flow controller is used to regulate the flow rate of the purge gas.
10. The dry etching apparatus according to claim 1, wherein The dry etching equipment further includes a suction pump, an exhaust pipeline and a second pneumatic valve. The second pneumatic valve is arranged on the exhaust pipeline. One end of the exhaust pipeline is connected to the process chamber, and the other end is connected to the suction pump. The suction pump evacuates the process chamber through the exhaust pipeline to discharge the purge gas in the process chamber.