Radiator of semiconductor power module

Abstract

The utility model relates to a radiator of a semiconductor power module, which comprises a single-channel base body or a double-channel base body, the top of the single-channel base body is provided with a limiting opening cavity, and two medium channels which are arranged diagonally and are communicated with the limiting opening cavity are formed on the side surface of the single-channel base body; the double-channel base body comprises two glands which are symmetrically arranged up and down and are mutually sealed and fixed, the interiors of the two glands are spliced to form a closed limiting cavity, and two medium grooves which are diagonally arranged are outwards formed in the edge of an opening of each gland; a plurality of columnar bulge combinations are also formed on the bottom wall of the limiting open cavity or the top wall and the bottom wall of the closed limiting cavity; each columnar bulge combination comprises a plurality of columnar bulges; according to the utility model, the cost is reduced and the operation is simplified; the problem of poor universality is solved; in addition, the installation difficulty is greatly reduced, so that the heat dissipation and sealing effects are effectively guaranteed.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor power modules, in particular to a radiator for a semiconductor power module. Background Art

[0002] A power module is a functional combination of power electronic devices encapsulated into a module. A semiconductor power module is a power module that uses semiconductor devices such as power metal-oxide-semiconductor field-effect transistors, insulated-gate bipolar transistors, or power integrated circuits as power electronic devices. In addition to semiconductor devices, a semiconductor power module also includes a heat dissipation structure and a package (including pins and a housing), etc. The heat dissipation structure of the semiconductor power module plays a role in transferring heat. To achieve real heat dissipation, it must rely on an external radiator to take away the heat conducted out. According to the different heat dissipation structures of semiconductor power modules, semiconductor power modules can be divided into single-channel heat dissipation power modules and dual-channel heat dissipation power modules. To adapt to these two forms, the external radiators are also divided into single-channel radiators and dual-channel radiators.

[0003] When a traditional single-channel heat dissipation power module is encapsulated, first, the heat dissipation surface of the single-channel heat dissipation power module is welded to a bottom plate with pin fins, then an O-ring is used to seal between the heat dissipation surface of the single-channel heat dissipation power module and the bottom plate, and then it is fixed to the radiator by bolts. The main drawback is that the operation steps are cumbersome, and the shape and specifications of the radiator need to be customized according to the power module, with poor versatility and a high cost.

[0004] For a traditional dual-channel heat dissipation power module, it is necessary to weld a bottom plate with pin fins to both the upper and lower heat dissipation surfaces of the dual-channel heat dissipation power module and prepare two radiators. Then, an O-ring is used to seal between each heat dissipation surface and the bottom plate, and then the dual-channel heat dissipation power module is fixed between the upper and lower radiators by bolts. Due to the tolerance in the height of each power module, at least one heat dissipation surface of the power module cannot be in the same plane, so the installation difficulty is large, thus affecting the heat dissipation and sealing effects.

[0005] Therefore, it is urgently needed to be solved. Summary of the Utility Model

[0006] Aiming at the current situation of the above-mentioned prior art, the technical problem to be solved by the utility model is to provide a radiator for a semiconductor power module that not only reduces costs but also simplifies operations, solves the problem of poor versatility, and greatly reduces the installation difficulty to effectively ensure the heat dissipation and sealing effects.

[0007] The technical solution adopted by the present utility model to solve the above technical problems is as follows: A heat sink for a semiconductor power module, characterized in that it includes a single-channel substrate or a double-channel substrate; a limiting opening cavity is formed at the top of the single-channel substrate, and two medium channels are formed on the side of the single-channel substrate, which are arranged diagonally to each other and are both communicated with the limiting opening cavity;

[0008] At the edge of the opening of each of the pressing covers, two medium grooves are formed diagonally to each other and extend outwards. The openings of the two medium grooves on the upper pressing cover are respectively sealed and fixed to the openings of the two medium grooves on the lower pressing cover to form two medium flow pipes that are both communicated with the closed limiting cavity;

[0009] A number of columnar protrusion combinations are also formed on the bottom wall of the limiting opening cavity or the top wall and the bottom wall of the closed limiting cavity. The columnar protrusion combination includes a plurality of columnar protrusions.

[0010] The number of the columnar protrusion combinations on the bottom wall of the limiting opening cavity is 1.

[0011] The number of the columnar protrusion combinations on the top wall of the closed limiting cavity is equal to the number of the columnar protrusion combinations on the bottom wall of the closed limiting cavity and is at least 1.

[0012] At least one of the columnar protrusion combinations on the top wall or the bottom wall of the closed limiting cavity is arranged in sequence from left to right.

[0013] Preferably, at least two partition walls for fitting on the left or right outer wall of the power module are formed between the front and rear inner walls of the pressing cover. The number of the partition walls is coordinated with the number of the columnar protrusion combinations on the top wall or the bottom wall of the closed limiting cavity so that there are two partition walls above or below any one of the columnar protrusion combinations.

[0014] Preferably, the lower edges of each of the partition walls in the upper pressing cover are respectively sealed and fixed to the upper edges of the corresponding partition walls in the lower pressing cover.

[0015] Preferably, a flow groove is formed between the two partition walls at the leftmost side of the closed limiting cavity and the left inner wall of the closed limiting cavity, and a flow groove is also formed between the two partition walls at the rightmost side of the closed limiting cavity and the right inner wall of the closed limiting cavity. The two medium flow pipes are respectively communicated with the two flow grooves.

[0016] Preferably, the end face shape of the columnar protrusion is a plane, a conical surface, a frustum surface or a serrated surface.

[0017] Preferably, an adjusting column which can move up and down and has an elastic recovery function is also embedded at the end of the columnar protrusion.

[0018] Preferably, the end face shape of the adjusting column is a plane, a conical surface, a frustum surface or a serrated surface.

[0019] Preferably, at least one low-lying part for accommodating welding or sintering materials is further provided at the end of the columnar protrusion or the adjusting column with a plane, conical surface or frustum surface as the end face shape.

[0020] Compared with the prior art, the advantages of the present utility model are as follows: the present utility model does not need to weld the power module on the bottom plate with pin fins, but integrates the pin fin structure into the inside of the single-channel heat dissipation shell or the double-channel heat dissipation shell, and at the same time, the power module can be directly sealed and fixed on the top of the single-channel heat dissipation shell or the inside of the double-channel heat dissipation shell to eliminate the necessity of using an O-ring for sealing. Furthermore, it not only saves materials to reduce costs, but also reduces the packaging steps between the power module and the radiator to simplify the operation; moreover, multiple single-channel heat dissipation shells or double-channel heat dissipation shells can be simply and conveniently connected in series according to the number of power modules to solve the problem of poor universality; in addition, the height tolerance between each power module can be completely eliminated by using the adjusting column, thereby greatly reducing the installation difficulty to effectively ensure the heat dissipation and sealing effects. Description of the Drawings

[0021] Figure 1 It is a front view sectional structure diagram of the single-channel base body of the present utility model;

[0022] Figure 2 It is a front view sectional exploded structure diagram of the double-channel base body of the present utility model;

[0023] Figure 3 It is a schematic diagram when the end face shape of the columnar protrusion of the present utility model is a plane, a conical surface, a frustum surface or a serrated surface;

[0024] Figure 4 It is a schematic diagram when the end face shape of the adjusting column of the present utility model is a plane, a conical surface, a frustum surface or a serrated surface;

[0025] Figure 5 It is a schematic diagram of the groove when the end face shape of the columnar protrusion of the present utility model is a plane, a conical surface or a frustum surface;

[0026] Figure 6 It is a schematic diagram of the groove when the end face shape of the adjusting column of the present utility model is a plane, a conical surface or a frustum surface;

[0027] Figure 7 It is a front view sectional diagram of the single-channel base body of the present utility model after installing the power module;

[0028] Figure 8 Front view sectional view of a dual-channel substrate after installing a power module of the present utility model;

[0029] Figure 9 Schematic diagram of multiple single-channel substrates of the present utility model in series;

[0030] Figure 10 Schematic diagram of multiple dual-channel substrates of the present utility model in series;

[0031] Figure 11 Schematic diagram when multiple power modules are installed inside the dual-channel substrate of the present utility model. Specific embodiments

[0032] Unless otherwise defined, the technical terms or scientific terms used in the present utility model shall have the ordinary meanings understood by those of ordinary skill in the field to which the present utility model belongs. The "first", "second" and similar terms used in the present utility model do not denote any order, quantity or importance, but are only used to distinguish different components. The terms such as "comprising" or "including" mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects. The terms such as "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms such as "upper", "lower", "left" and "right" are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0033] In order to keep the following description of the embodiments of the present utility model clear and concise, the detailed descriptions of known functions and known components are omitted in the present utility model.

[0034] As Figures 1-2 shown, a heat sink for a semiconductor power module includes a single-channel substrate 1 or a dual-channel substrate 2. A limiting opening cavity 11 is formed at the top of the single-channel substrate 1, and two medium channels 12 are formed on the side surface of the single-channel substrate 1 and are arranged diagonally to each other and are both in communication with the limiting opening cavity 11. The dual-channel substrate 2 includes two upper and lower symmetrically arranged and hermetically fixed gland covers 21. A closed limiting cavity 22 is formed by the internal splicing of the two gland covers 21. At the edge of the opening of each gland cover 21, two diagonally arranged medium grooves 23 are formed outward. The openings of the two medium grooves 23 on the upper gland cover 21 are respectively hermetically fixed to the openings of the two medium grooves 23 on the lower gland cover 21 to form two medium flow pipes 24 both in communication with the closed limiting cavity 22. A plurality of columnar protrusion combinations are also formed on the bottom wall of the limiting opening cavity 11 or the top wall and the bottom wall of the closed limiting cavity 22. The columnar protrusion combination includes a plurality of columnar protrusions 3.

[0035] The number of the columnar protrusion combinations located on the bottom wall of the limit opening cavity 11 is 1.

[0036] The number of the columnar protrusion combinations located on the top wall of the closed limit cavity 22 is equal to the number of the columnar protrusion combinations located on the bottom wall of the closed limit cavity 22, and both are at least 1.

[0037] At least one columnar protrusion combination located on the top wall or the bottom wall of the closed limit cavity 22 is arranged in sequence from left to right.

[0038] Between the front and rear inner walls of the gland 21, at least two partition walls 25 for fitting on the left or right outer wall of the power module 6 are further formed. The number of the partition walls 25 cooperates with the number of the columnar protrusion combinations located on the top wall or the bottom wall of the closed limit cavity 22 so that there are two partition walls 25 above or below any columnar protrusion combination.

[0039] The lower side edges of each partition wall 25 in the upper gland 21 are respectively sealed and fixed to the upper side edges of the corresponding partition wall 25 in the lower gland 21.

[0040] A flow-through groove 26 is formed between the two partition walls 25 at the leftmost side of the closed limit cavity 22 and the left inner wall of the closed limit cavity 22, and a flow-through groove 26 is also formed between the two partition walls 25 at the rightmost side of the closed limit cavity 22 and the right inner wall of the closed limit cavity 22. The two medium flow-through pipes 24 are respectively communicated with the two flow-through grooves 26.

[0041] As Figure 3 shown, the end face shape of the columnar protrusion 3 is a plane, a conical surface, a frustum surface or a serrated surface. (a), (b), (c), and (d) respectively represent schematic diagrams when the end face shape of the columnar protrusion 3 is a plane, a conical surface, a frustum surface or a serrated surface.

[0042] An adjusting column 4 which can move up and down and has an elastic recovery function is also embedded at the end of the columnar protrusion 3 to offset the vertical position tolerance caused by the error in the flatness of the welding surface at the end of the columnar protrusion 3 on the power module 6.

[0043] As Figure 4 shown, the end face shape of the adjusting column 4 is a plane, a conical surface, a frustum surface or a serrated surface. (a), (b), (c), and (d) respectively represent schematic diagrams when the end face shape of the adjusting column 4 is a plane, a conical surface, a frustum surface or a serrated surface.

[0044] As Figures 5-6As shown, at least one depression 5 is provided at the end of the columnar protrusion 3 or the adjustment column 4 with a flat, conical or frustum-shaped end face, for accommodating the welding or sintering material 7. (a), (b), and (c) respectively show schematic diagrams of the depression 5 when the end face of the columnar protrusion 3 or the adjustment column 4 is flat, conical or frustum-shaped.

[0045] As Figure 7 shown, the encapsulation steps of the power module 6 that requires single-sided cooling are as follows:

[0046] (1) Dip or apply a certain amount of welding or sintering material 7 at the end of each columnar protrusion 3 or adjustment column 4, so that the welding or sintering material 7 is stored in each depression 5; for the columnar protrusion 3 or adjustment column 4 with a serrated end face, it is only necessary to store the welding or sintering material 7 between any two adjacent serrations.

[0047] (2) Seal and fix the bottom of the power module 6 to the top of the single-channel substrate 1 by welding or sintering, thereby closing the opening of the limit cavity 11.

[0048] (3) At this time, the end of each columnar protrusion 3 or adjustment column 4 abuts against the bottom of the power module 6, and then the matching welding or sintering equipment is used to cure each welding or sintering material 7 located at the end of the columnar protrusion 3 or adjustment column 4, thereby fixing the end of each columnar protrusion 3 or adjustment column 4 to the bottom of the power module 6.

[0049] As Figure 8 shown, the encapsulation steps of the power module 6 that requires double-sided cooling are as follows:

[0050] (1) Take a double-channel substrate 2 and dip or apply a certain amount of welding or sintering material 7 at the end of each columnar protrusion 3 or adjustment column 4 in each gland 21, so that the welding or sintering material 7 is stored in each depression 5; for the columnar protrusion 3 or adjustment column 4 with a serrated end face, it is only necessary to store the welding or sintering material 7 between any two adjacent serrations.

[0051] (2) Place the power module 6 into the closed limit cavity 22 and make the inner wall of each partition wall 25 fit against the left or right outer wall of the power module 6, and then splice the two glands 21 and seal and splice them together by welding or sintering.

[0052] (3) At this time, the end of each columnar protrusion 3 or adjustment column 4 abuts against the top or bottom of the power module 6, and then the matching welding or sintering equipment is used to cure each welding or sintering material 7 located at the end of the columnar protrusion 3 or adjustment column 4, thereby fixing the end of each columnar protrusion 3 or adjustment column 4 to the top or bottom of the power module 6.

[0053] Cooling principle:

[0054] When single-sided cooling is adopted, the heat generated by the power module 6 is transferred to each columnar protrusion 3. Cooling water is introduced into any one of the medium channels 12 so that the cooling water enters the limit opening cavity 11 through the above-mentioned medium flow pipe 24, and then the heat on each columnar protrusion 3 is taken away, and finally discharged outward through another medium channel 12 to achieve circulating heat dissipation. When double-sided cooling is adopted, the heat generated by the power module 6 is also transferred to each columnar protrusion 3. Cooling water is introduced into any one of the medium flow pipes 24 so that the cooling water enters the corresponding flow groove 26 through the above-mentioned medium flow pipe 24, and then is divided into two streams and flows to the upper and lower sides of the power module 6 respectively, and then the heat on each columnar protrusion 3 is taken away, and finally enters another flow groove 26 to converge and is discharged outward through another medium flow pipe 24 to achieve circulating heat dissipation.

[0055] Embodiment 1:

[0056] As Figure 9 shown, after arranging multiple single-channel substrates 1 in sequence, and connecting two adjacent and similar medium channels 12 on the two single-channel substrates 1 in series, a common cooling water circulation system can be realized.

[0057] Embodiment 2:

[0058] As Figure 10 shown, when the number of columnar protrusion combinations on the top wall or bottom wall of the closed limit cavity 22 is 1, after taking multiple double-channel substrates 2 and arranging them in sequence, and connecting two adjacent and similar medium flow pipes 24 on the two double-channel substrates 2 in series, a common cooling water circulation system can be realized.

[0059] Embodiment 3:

[0060] As Figure 11 shown, when the number of columnar protrusion combinations on the top wall or bottom wall of the closed limit cavity 22 is greater than 1, only one double-channel substrate 2 is needed. Each power module 6 is installed between any two adjacent partition walls 25 inside the double-channel substrate 2, and thus a common cooling water circulation system for multiple power modules 6 can also be realized.

[0061] The utility model does not require welding the power module 6 on the bottom plate with pin fins. Instead, the pin fin structure is integrated into the interior of the single-channel base body 1 or the double-channel base body 2, and at the same time, the power module 6 can be directly and hermetically fixed on the top of the single-channel base body 1 or inside the double-channel base body 2, thus eliminating the need for using an O-ring for sealing. As a result, it not only saves materials and reduces costs, but also reduces the encapsulation steps between the power module 6 and the radiator to simplify the operation. Moreover, multiple single-channel base bodies 1 or double-channel base bodies 2 can be simply and conveniently connected in series according to the number of power modules 6 to solve the problem of poor versatility. In addition, by using the adjusting column 4, the height tolerance between each power module 6 can be completely eliminated, thereby greatly reducing the installation difficulty and effectively ensuring the heat dissipation and sealing effects.

[0062] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments or perform equivalent replacements for some of the technical features. However, such modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A heat sink for a semiconductor power module, characterized in that, It includes a single-channel matrix or a dual-channel matrix; a limiting cavity is formed at the top of the single-channel matrix, and two medium channels are formed on the side of the single-channel matrix, which are arranged diagonally and communicate with the limiting cavity; the dual-channel matrix includes two gland covers that are symmetrically arranged up and down and are sealed and fixed to each other, and a closed limiting cavity is formed by the combination of the interiors of the two gland covers; At the edge of the opening of each gland cover, two medium grooves are formed diagonally, and the openings of the two medium grooves on the upper gland cover are respectively sealed and fixed to the openings of the two medium grooves on the lower gland cover to form two medium flow pipes that communicate with the closed limiting cavity; A number of columnar protrusion combinations are also formed on the bottom wall of the limiting cavity or the top wall and the bottom wall of the closed limiting cavity, and the columnar protrusion combination includes a plurality of columnar protrusions; The number of the columnar protrusion combinations on the bottom wall of the limiting cavity is 1; The number of the columnar protrusion combinations on the top wall of the closed limiting cavity is equal to the number of the columnar protrusion combinations on the bottom wall of the closed limiting cavity and is at least 1; At least 1 of the columnar protrusion combinations on the top wall or the bottom wall of the closed limiting cavity is arranged in sequence from left to right.

2. The radiator of a semiconductor power module according to claim 1, characterized in that, At least two partition walls for fitting on the left or right outer wall of the power module are formed between the front and rear inner walls of the gland cover, and the number of the partition walls cooperates with the number of the columnar protrusion combinations on the top wall or the bottom wall of the closed limiting cavity so that there are two partition walls above or below any columnar protrusion combination.

3. The heat sink of a semiconductor power module according to claim 2, wherein, The lower edges of each partition wall in the upper gland cover are respectively sealed and fixed to the upper edges of the corresponding partition walls in the lower gland cover.

4. The heat sink of a semiconductor power module according to claim 3, characterized in that, A flow groove is formed between the two partition walls at the leftmost side of the closed limiting cavity and the left inner wall of the closed limiting cavity, and a flow groove is also formed between the two partition walls at the rightmost side of the closed limiting cavity and the right inner wall of the closed limiting cavity, and the two medium flow pipes communicate with the two flow grooves respectively.

5. The heat sink of a semiconductor power module according to claim 1, wherein The end face shape of the columnar protrusion is a plane, a conical surface, a frustum surface or a serrated surface.

6. The heat sink of a semiconductor power module according to claim 5, characterized in that, An adjusting column that can move up and down and has an elastic recovery function is embedded at the end of the columnar protrusion.

7. The heat sink of a semiconductor power module according to claim 6, characterized in that, The end face shape of the adjusting column is a plane, a conical surface, a frustum surface or a serrated surface.

8. The radiator of a semiconductor power module according to claim 7, wherein, At least one low-lying part for accommodating welding or sintering materials is also formed at the end of the columnar protrusion or the adjusting column with a plane, conical surface or frustum surface as the end face shape.

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