Large-beam ion implanter with temperature measuring device
By installing a temperature measuring device on the large beam ion implanter, the problem of abnormal positioning of the base caused by poor heat dissipation of the target disk is solved, and fast and accurate abnormal detection and maintenance are achieved, reducing product risks.
Patent Information
- Application Number
- CN202422363996.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-27
- Publication Date
- 2025-07-11
- Estimated Expiration
- 2034-09-27
AI Technical Summary
The existing large beam ion implanters are difficult to accurately determine the abnormal base when the target plate is poorly dissipated, resulting in the risk of explosive glue or dead goods. The existing methods cannot accurately locate the abnormal base.
The temperature detector is installed outside the target disk, and the temperature measuring device is used to detect the wafer support disk temperature one by one during the process of the process ending the lowering process, and fed back to the machine operation interface to trigger an alarm to locate the abnormal base.
实现了快速准确地发现异常晶圆支撑盘,减少产品风险,提高了生产的安全性和可靠性。
Smart Images
Figure CN223087894U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of semiconductor processing equipment, and particularly relates to a high-current ion implanter provided with a temperature measuring device. Background Art
[0002] A high-current ion implanter is a key device used in the semiconductor manufacturing process. In the production of semiconductor devices, ion implantation is a very important step. By injecting dopant ions into a silicon wafer or other semiconductor materials in a precisely controlled manner, the conductive characteristics of the material can be changed. During the entire process, due to the long injection time and high energy, if the target disk has poor heat dissipation during the process, there will be a risk of glue explosion or defective products.
[0003] During the process, the target disk is cooled by cooling water. Currently, the method used to determine whether the target disk is dissipating heat normally is to observe whether the flow rate of the total cooling water of the target disk has decreased. However, since the main water pipe branches into water paths after entering the target disk and reaches under each wafer pedestal, when a single pedestal is abnormally blocked, it is very difficult to judge from the total water path flow rate, and it is even impossible to directly lock the pedestal where the abnormality occurs. Therefore, it is necessary to provide a new high-current ion implanter with a temperature measuring device to solve the above problems. Summary of the Utility Model
[0004] The utility model is to solve all or part of the above-mentioned prior art problems, and provides a high-current ion implanter with a temperature measuring device. A temperature detector is installed outside the target disk. During the wafer unloading process after the process is completed, the wafer support disk stays in front of the temperature detection hole in a clockwise direction in turn, and the temperature is detected one by one and fed back to the upper part of the machine operation interface, so that the abnormal pedestal can be accurately and quickly found and repaired, reducing the product risk.
[0005] To achieve the above object, the utility model provides a high-current ion implanter with a temperature measuring device, which is characterized in that it includes a vacuum process chamber and a temperature measuring device. The vacuum process chamber includes a left process chamber door, a right process chamber door, and a cavity provided between the left process chamber door and the right process chamber door. A target disk is installed on the inner side of the left process chamber door, and the target disk is connected to a rotation driving device located outside the left process chamber door. A plurality of wafer support disks are uniformly installed on the same circumference of the target disk; there is a reserved hole on the right process chamber door, and the temperature measuring device is installed in the reserved hole; the temperature measuring end of the temperature measuring device faces the wafer support disk. Through the transformation design, when the detected temperature is too high, an alarm is triggered, and the abnormal wafer support disk can be accurately and quickly found and repaired.
[0006] The temperature measuring device includes a temperature measuring component, an information transmission component, a machine platform, and an alarm device. The temperature measuring component is connected to the machine platform and the alarm device through the information transmission component. According to the temperature feedback from the machine platform, attention needs to be paid when the detected temperature is greater than 60°C, and when the detected temperature is greater than 65°C, the detector triggers an alarm.
[0007] The temperature measuring component includes a temperature sensing element, a packaging housing, and a lead wire. The temperature sensing element is connected to the information transmission component through the lead wire. The packaging housing wraps around the temperature sensing element to protect the temperature sensing element and ensure the safety of the equipment.
[0008] The reserved hole is located at the upper right position of the right process chamber door and is designed using the original structure of the equipment, which helps to simplify the improvement cost and process.
[0009] A gap is provided between the end of the temperature sensing element and the wafer support disk to prevent the temperature sensing element from contacting the wafer support disk and affecting the process and product quality.
[0010] A linear drive device is also provided outside the left process chamber door. The linear drive device drives the vacuum process chamber to move linearly to ensure that the ion beam can evenly irradiate different areas of the sample surface.
[0011] A load lock chamber is connected to the left side of the vacuum process chamber, serving as a transition space for the wafer to enter and exit the vacuum process chamber and maintaining the vacuum degree of the vacuum process chamber. A gate is provided between the load lock chamber and the vacuum process chamber, which can transfer the wafer from the atmospheric pressure environment to the vacuum process chamber or return it from the vacuum process chamber to the atmospheric pressure environment without destroying the vacuum state of the vacuum process chamber.
[0012] There is a cooling water pipeline in the wafer support disk for cooling the wafer. The cooling water pipeline is connected to the total cooling water pipeline in the target disk to cool the wafer support disk during the process to prevent the temperature of the wafer support disk from being too high and affecting the wafer.
[0013] The upper edge of the wafer support disk is evenly provided with wafer fixing clips, namely the first wafer fixing clip, the second wafer fixing clip, and the third wafer fixing clip. The first wafer fixing clip is a flat-edge clip, and the second and third wafer fixing clips are needle-type clips. They clamp and fix the wafer during the injection process to prevent the wafer from falling and affecting the process.
[0014] Compared with the prior art, the beneficial effects of the present utility model mainly include the following: The present utility model provides a large beam current ion implanter equipped with a temperature measuring device. By using the reserved holes on the target disk as temperature detection holes and installing a temperature measuring device in the temperature detection holes, during the wafer unloading process, the rotation drive device controls the wafer support disk to stop in front of the temperature detection holes in a clockwise direction in sequence for temperature detection, and feeds back to the machine operation interface, which can timely detect the abnormal base of the local target disk and reduce product risks. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] In order to more clearly illustrate the technical solutions in the specific embodiments of the present utility model, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the following described drawings are only some embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.
[0016] Figure 1 FIG. is a partial structural schematic diagram of a large beam current ion implanter equipped with a temperature measuring device provided by the present utility model.
[0017] Figure 2 FIG. is a structural schematic diagram of a vacuum process chamber of a large beam current ion implanter equipped with a temperature measuring device provided by the present utility model.
[0018] Figure 3 FIG. is a side view of a vacuum process chamber and a temperature measuring device of a large beam current ion implanter equipped with a temperature measuring device provided by the present utility model.
[0019] Figure 4 FIG. is a structural schematic diagram of a wafer support disk of a large beam current ion implanter equipped with a temperature measuring device provided by the present utility model. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0020] Regarding the foregoing and other technical contents, features and effects of the present utility model, they will be clearly presented in the following detailed description of a preferred embodiment in conjunction with the reference drawings. The directional terms mentioned in the following embodiments, such as: up, down, left, right, front or back, etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are for illustration and not for limiting the present utility model.
[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present utility model with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.
[0022] The present utility model provides a high-current ion implanter equipped with a temperature measuring device, as Figure 1 described, including a vacuum process chamber 1, a temperature measuring device 2, a rotary drive device 3, a linear drive device 4, and a load lock chamber 5.
[0023] As Figure 2 shown, it includes a vacuum process chamber 1 and a temperature measuring device 2. The vacuum process chamber 1 includes a left process chamber door 11, a right process chamber door 12, and a cavity provided between the left process chamber door and the right process chamber door. A target disk is installed on the inner side of the left process chamber door 11, and the target disk is connected to a rotary drive device 3 located outside the left process chamber door. A plurality of wafer support disks are evenly installed on the same circumference of the target disk; there are reserved holes on the right process chamber door 12, and the temperature measuring device 2 is installed in the reserved holes; the temperature measuring end of the temperature measuring device faces the wafer support disk.
[0024] The temperature measuring device 2 includes a temperature measuring component, an information transmission component, a machine platform, and an alarm device. The temperature measuring component is connected to the machine platform and the alarm device through the information transmission component. The temperature measuring component includes a temperature sensing element, a packaging shell, and a lead wire. The temperature sensing element is connected to the information transmission component through the lead wire, and the packaging shell wraps outside the temperature sensing element to protect the temperature sensing element.
[0025] The reserved holes are located at the upper right position of the right process chamber door 12, and there is a gap between the end of the temperature sensing element and the wafer support disk to prevent the temperature sensing element from contacting the wafer support disk and affecting the temperature measuring device and the process.
[0026] A linear drive device 4 is also provided outside the left process chamber door 11. The linear drive device 4 drives the vacuum process chamber 1 to move linearly to ensure that the ion beam can evenly irradiate different areas of the sample surface.
[0027] A load lock chamber 5 is connected to the left side of the vacuum process chamber 1 as a transition space for wafers to enter and exit the vacuum process chamber 1, maintaining the vacuum degree of the vacuum process chamber 1. There is a gate between the load lock chamber 5 and the vacuum process chamber 1, which can transfer the wafer from the atmospheric pressure environment to the vacuum process chamber 1 or return from the vacuum process chamber 1 to the atmospheric pressure environment without destroying the vacuum state of the vacuum process chamber 1.
[0028] There is a cooling water pipeline in the wafer support disk for cooling the wafer. The cooling water pipeline is connected to the total cooling water pipeline in the target disk to cool the wafer support disk during the process to prevent the temperature of the wafer support disk from being too high and affecting the wafer.
[0029] As Figure 4As shown, wafer fixing clips are evenly arranged on the edge of the wafer support disk, namely the first wafer fixing clip, the second wafer fixing clip, and the third wafer fixing clip; the first wafer fixing clip is a flat-edge clip, and the second wafer fixing clip and the third wafer fixing clip are needle-type clips, which are used to fix the wafer during the process to prevent the wafer from falling and affecting the process.
[0030] The following introduces the working mode of a large beam current ion implanter with a temperature measuring device provided in this embodiment: after the implantation process is completed, a fully automated temperature measurement and wafer unloading process is carried out. The wafer support disk stays in front of the temperature detection hole in a clockwise direction in turn. The temperature measurement component monitors the temperature in real time and feeds it back to the upper part of the machine operation interface. Attention should be paid when the detected temperature is greater than 60°C (the normal process temperature is not higher than 60°C); when the detected temperature is greater than 65°C, the detector is set to trigger an alarm, so that the abnormal wafer support disk can be quickly and accurately found and repaired; various methods can be used to cool the wafer unloaded after temperature measurement.
[0031] Some common English nouns or letters used in this application for the convenience of clear description are only for exemplary reference rather than restrictive interpretation or specific usage, and the protection scope of this application should not be limited by their possible Chinese translations or specific letters. It should also be noted that in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.
Claims
1. A large-beam ion implanter equipped with a temperature measuring device, characterized in that, It includes a vacuum process chamber (1) and a temperature measuring device (2). The vacuum process chamber (1) includes a left process chamber door (11) and a right process chamber door (12), and a cavity provided between the left process chamber door (11) and the right process chamber door (12). A target disk is installed on the inner side of the left process chamber door (11), and the target disk is connected to a rotation driving device (3) located outside the left process chamber door (11). A plurality of wafer support disks are evenly installed on the same circumference of the target disk; there is a reserved hole on the right process chamber door (12), and the temperature measuring device (2) is installed in the reserved hole; the temperature measuring end of the temperature measuring device (2) faces the wafer support disk.
2. The large-beam ion implanter with a temperature measuring device according to claim 1, wherein, The temperature measuring device (2) includes a temperature measuring component, an information transmission component, a machine platform and an alarm device, and the temperature measuring component is connected to the machine platform and the alarm device through the information transmission component.
3. The large-beam ion implanter with a temperature measuring device according to claim 2, characterized in that, The temperature measuring component includes a temperature sensing element, a packaging shell and leads, the temperature sensing element is connected to the information transmission component through the leads, and the packaging shell wraps the temperature sensing element.
4. A large beam current ion implanter provided with a temperature measuring device according to claim 1, characterized in that, The reserved hole is located at the upper right position of the right process chamber door (12).
5. The large-beam ion implanter with a temperature measuring device according to claim 3, wherein, A gap is provided between the end of the temperature sensing element and the wafer support disk.
6. The large-beam ion implanter with a temperature measuring device according to claim 1, characterized in that, A linear driving device (4) is further provided outside the left process chamber door (11), and the linear driving device (4) drives the vacuum process chamber (1) to perform linear motion.
7. A large beam current ion implanter equipped with a temperature measuring device according to claim 1, characterized in that, A load lock chamber (5) is connected to the left side of the vacuum process chamber (1), and a gate is provided between the vacuum process chamber (1) and the load lock chamber (5).
8. The large beam current ion implanter with a temperature measuring device according to claim 1, characterized in that, There is a cooling water pipeline in the wafer support disk for cooling the wafer, and the cooling water pipeline is connected to the total cooling water pipeline in the target disk.
9. A large beam current ion implanter provided with a temperature measuring device according to claim 1, characterized in that, Wafer fixing clips are evenly provided at the edge of the wafer support disk, which are a first wafer fixing clip, a second wafer fixing clip and a third wafer fixing clip respectively.
10. A large beam current ion implanter provided with a temperature measuring device according to claim 9, characterized in that, The first wafer fixing clip is a flat-edge clip, and the second wafer fixing clip and the third wafer fixing clip are needle-type clips.