Improved device for pressing and conducting contacts

Abstract

The utility model relates to an improved pressure contact conduction contact device in the technical field of wafer electroplating. The improved pressure contact conduction contact device comprises a three-point contact type hanger; the three-point pressing contact type conducting structure comprises a main body plate, a plurality of connecting plates and a plurality of connecting plates, the binding posts are arranged on the main body plate in a parallel connection manner; the reset spring is arranged outside the binding post; the circular contact is arranged at the bottom of the binding post; and the square contact is in contact with the circular contact. By adopting a pressure contact type structure, the problem of poor contact caused by shaking of a hanging tool in the electroplating process of a traditional conduction device can be effectively avoided, and the stability of current transmission is improved. The three parallel pins are included in the design, the whole electroplating process cannot be affected even if one of the pins or the wire is short-circuited or poor in connection, and therefore the reliability of electroplating operation is improved. By arranging the three contacts, stress concentration can be dispersed, the risk that a single contact is broken due to overlarge stress is reduced, and the durability and stability of the conduction device are enhanced.

Description

Technical Field

[0001] The utility model relates to the technical field of wafer electroplating, in particular to a device for improving a pressure-contact conducting contact point. Background Technique

[0002] In the wafer electroplating process, the wafer needs to be fixed by a fixture so as to be placed in an electroplating tank for electroplating. To ensure the smooth transmission of current during the electroplating process, conductive contacts are usually arranged in the area of the fixture main board that does not contact the electroplating solution. These contacts are fitted with the contact points on the conducting frame to achieve current conduction. However, the sheet-shaped contacts used in the traditional conducting device may be displaced due to the shaking of the fixture during the electroplating process, resulting in poor contact, affecting the current transmission efficiency, and further affecting the electroplating quality.

[0003] To solve this problem, people have tried to improve the sheet-shaped contact into a single-point Pin pressure-contact structure. This structure fixes the contact by the compression of a spring, reducing the poor contact caused by the shaking during the electroplating process. Although this improvement has improved the contact stability to a certain extent, the frequent pressing operation may cause the spring to fatigue, deform or even break, thus affecting the reliability and service life of the conducting device. Content of the Utility Model

[0004] The purpose of the utility model is to solve the defects existing in the prior art, and to propose a device for improving a pressure-contact conducting contact point.

[0005] To achieve the above purpose, the utility model adopts the following technical scheme: A device for improving a pressure-contact conducting contact point, comprising:

[0006] A three-point contact type fixture;

[0007] A three-point pressure-contact conducting structure on the three-point contact type fixture, which comprises:

[0008] A main body board;

[0009] Terminal posts existing in parallel on the main body board;

[0010] A return spring arranged outside the terminal posts;

[0011] A circular contact arranged at the bottom of the terminal posts;

[0012] A square contact contacting with the circular contact.

[0013] As a further description of the above technical scheme:

[0014] The three-point contact type fixture comprises:

[0015] A Dip fixture is used to carry the wafer body and place the wafer body into an electroplating bath to perform electroplating operations.

[0016] Three wires pulled out from the three-point press-contact conduction structure are connected in parallel and are respectively connected to the wafer conductive unit.

[0017] A wafer carrier device has a groove structure for placing the wafer body.

[0018] A wafer upper cover is used to press and fix the placed wafer body.

[0019] Three conductive sheets are evenly distributed on the wafer body, and the distances between the three are kept consistent, which are used to connect wires to achieve circuit conduction for electroplating operations.

[0020] Spirals with matching degrees are provided on the wafer carrier device and the wafer upper cover, and the two are fixed by twisting.

[0021] As a further description of the above technical solution:

[0022] The Dip fixture has a double-sided structure and has two wafer carrier devices. There are three conduction contacts above each side of each wafer carrier device.

[0023] The utility model has the following beneficial effects:

[0024] The traditional sheet-type contacts are changed to three-point press-contact pins. The distances between the three pins on the conductive sheet of the wafer are kept consistent. When not in use, they normally exist. When in use, the springs under the contacts will lock to keep them fixed.

[0025] Benefits that can be achieved by the new process after design:

[0026] (1) By adopting a press-contact structure, it can effectively avoid the problem of poor contact caused by the shaking of the fixture during electroplating in the traditional conduction device, and improve the stability of current transmission.

[0027] (2) The design includes three parallel pins. Even if one pin or wire has a short circuit or poor connection, it will not affect the entire electroplating process, thus improving the reliability of electroplating operations.

[0028] (3) By setting three contacts, stress concentration can be dispersed, reducing the risk of breakage of a single contact due to excessive stress, and enhancing the durability and stability of the conduction device. Description of the Drawings

[0029] Figure 1 It is a schematic structural diagram of a three-point press-contact conduction structure of an improved press-contact conduction joint device proposed by the utility model.

[0030] Figure 2 Schematic diagram of the structure of a three - point contact jig for an improved pressure - contact conduction contact device proposed by the present utility model;

[0031] Figure 3 Process diagram of electroplating a three - point contact jig for an improved pressure - contact conduction contact device proposed by the present utility model.

[0032] Legend:

[0033] 1. Dip jig; 2. Wire; 3. Wafer carrier device; 4. Wafer top cover; 5. Conductive sheet; 6. Helix; 7. Electroplating bath; 8. Electroplating solution; 9. Metal rod; 10. Wafer body; 11. Conduction frame; 12. Power supply; 13. Three - point pressure - contact conduction structure; 14. Main body plate; 15. Terminal; 16. Return spring; 17. Circular contact; 18. Square contact. Detailed implementation manners

[0034] Next, the technical solutions in the embodiments of the present utility model will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts shall fall within the protection scope of the present utility model.

[0035] Refer to Figures 1 - 3 , an embodiment provided by the present utility model: An improved pressure - contact conduction contact device includes:

[0036] Three - point contact jig;

[0037] The three - point pressure - contact conduction structure 13 on the three - point contact jig, which includes:

[0038] Main body plate 14;

[0039] Terminals 15 existing in parallel on the main body plate 14;

[0040] Return springs 16 arranged outside the terminals 15;

[0041] Circular contacts 17 arranged at the bottom of the terminals 15;

[0042] Square contacts 18 in contact with the circular contacts 17.

[0043] The three - point contact jig includes:

[0044] Dip jig 1, used to carry the wafer body 10 and place the wafer body 10 into the electroplating bath 7 to achieve electroplating operations,

[0045] Three wires 2 drawn from the three-point pressure contact conduction structure 13 are connected in parallel and are respectively connected to the wafer conductive units;

[0046] The wafer carrier device 3 has a groove structure for placing the wafer body 10;

[0047] The wafer top cover 4 is used to press and fix the placed wafer body 10;

[0048] Three conductive sheets 5 are evenly distributed on the wafer body 10, and the distances between the three are kept the same, and are used to connect the wires 2 to achieve circuit conduction for electroplating operations;

[0049] On the wafer carrier device 3 and the wafer top cover 4, there are spiral lines 6 with matching degrees, and the two are fixed by twisting.

[0050] The Dip fixture 1 has a double-sided structure and has two wafer carrier devices 3. Above each side of each wafer carrier device 3, there are three conduction contacts.

[0051] Figure 3 It is a process diagram for electroplating with a three-point contact fixture: Among them:

[0052] The electroplating tank 7 is a place for electroplating operations, and it carries the electroplating solution 8 for electroplating.

[0053] The electroplating solution 8 immerses the wafer body 10 and the metal rod 9, and an electrolytic reaction occurs to achieve the purpose of electroplating.

[0054] The metal rod 9, during the electroplating process, acts as an anode and undergoes an oxidation reaction. Through the principle of electrolysis, metal is deposited on the surface of the wafer body 10 to form a uniform, dense, and well-bonded metal layer. Different metals can be replaced according to different requirements.

[0055] The wafer body 10 is fixed in the fixture and acts as a cathode. Metal ions in the electroplating solution 8 are deposited on its surface to form the required metal coating through the action of the DC power supply 12.

[0056] The conduction frames 11, two conduction frames 11 horizontally placed above the electroplating solution 8, are used to carry the three-point contact fixture. At the same time, through the square contacts 18 above them and the circular contacts 17 of the three-point pressure contact conduction structure 13 on the three-point contact fixture, the circuit can be conducted.

[0057] The power supply 12 is inside the conduction frame 11. The negative terminal is connected to the Pin, and the positive terminal is connected to the metal rod 9 layer. When the wafer body 10 of the fixture is immersed in the electroplating solution 8, a loop can be formed.

[0058] The three-point pressure-contact conduction structure 13 is on the fixture. When the fixture is placed downward on the conduction frame 11, the three Pins will be connected to the square contact 18. Adopting the pressure-contact method can ensure good current contact and improve reliability at the same time.

[0059] Working principle:

[0060] Preparation stage:

[0061] First, place the wafer body 10 on the wafer carrier device 3 of the Dip fixture 1 to ensure that the wafer body 10 is stably placed in the groove structure.

[0062] Fix the wafer body 10 through the wafer top cover 4. Utilize the spiral line 6 on the wafer carrier device 3 and the wafer top cover 4, and achieve fixation by twisting.

[0063] Electroplating preparation:

[0064] Put the Dip fixture 1 into the electroplating bath 7, and the electroplating bath 7 is filled with electroplating solution 8 for electroplating operations.

[0065] The metal bar 9 serves as the anode and is immersed in the electroplating solution 8 to prepare for the oxidation reaction during electroplating.

[0066] Circuit connection:

[0067] The circular contact 17 of the three-point pressure-contact conduction structure 13 contacts the square contact 18 on the conduction frame 11 through the action of the return spring 16 to form a circuit connection.

[0068] The square contact 18 on the conduction frame 11 is connected to the positive terminal of the power supply 12, while the negative terminal of the power supply 12 is connected to the metal bar 9.

[0069] Electroplating process:

[0070] When the Dip fixture 1 is immersed in the electroplating solution 8, the wafer body 10 serves as the cathode. Through the action of the DC power supply 12, metal ions in the electroplating solution 8 are deposited on the surface of the wafer body 10 to form the required metal coating.

[0071] During the electroplating process, the metal bar 9 serves as the anode and undergoes an oxidation reaction. Metal ions are released into the electroplating solution 8 and are deposited on the surface of the wafer body 10 through the electrolysis principle.

[0072] Conduction and current control:

[0073] The three-point pressure-contact conduction structure 13 ensures stable current contact and improves the reliability of the electroplating process.

[0074] By controlling the current and voltage of the power supply 12, the thickness and quality of the electroplating layer can be precisely controlled.

[0075] Electroplating completed:

[0076] After electroplating is completed, take out the Dip fixture 1 from the electroplating tank 7 and disconnect the circuit connection.

[0077] Remove the upper cover 4 of the wafer, take out the wafer body 10, and complete the electroplating operation.

[0078] Finally, it should be noted that the above are only the preferred embodiments of the present invention and are not used to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. An improved device for pressing and conducting contacts, characterized in that: Including: Three-point contact fixture; Three-point pressure contact conduction structure (13) on the three-point contact fixture, which includes: Main body plate (14); Terminal posts (15) existing in parallel on the main body plate (14); Reset springs (16) arranged outside the terminal posts (15); Circular contacts (17) arranged at the bottom of the terminal posts (15); Square contacts (18) in contact with the circular contacts (17).

2. The improved device for pressing and conducting contacts according to claim 1, wherein: The three-point contact fixture includes: Dip fixture (1), used to carry the wafer body (10) and place the wafer body (10) into the electroplating tank (7) to perform electroplating operations, Three wires (2) pulled out from the three-point pressure contact conduction structure (13), connected in parallel, and respectively connected to the wafer conductive units; Wafer carrier device (3) with a groove structure for placing the wafer body (10); Wafer upper cover (4) for pressing and fixing the placed wafer body (10); Three conductive sheets (5), evenly distributed on the wafer body (10) and with a consistent distance between them, used to connect the wires (2) to achieve circuit conduction for electroplating operations; Spirals (6) with a matching degree are arranged on the wafer carrier device (3) and the wafer upper cover (4), and the two are fixed by twisting.

3. The improved device for pressing and conducting contacts according to claim 2, wherein: The Dip fixture (1) has a double-sided structure with two wafer carrier devices (3), and there are three conduction contacts above each side of each wafer carrier device (3).

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