Inverter and energy storage system

Abstract

The utility model provides an inverter and an energy storage system. The inverter comprises a body; the power device is arranged in the body; the heat dissipation device is arranged on the outer side of the body; the heat conduction layer is arranged on the power device, at least part of the heat conduction layer is located between the power device and the heat dissipation device, and the heat conduction layer is attached to the power device; wherein at least one part of the heat conduction layer comprises a graphene film layer. When heat generated by the power device is transmitted to the graphene film layer, the heat is rapidly transmitted in the direction perpendicular to the thickness direction of the graphene film layer, dispersed to the periphery of the graphene film layer and then transmitted to the heat dissipation device, heat exchange is conducted through the heat dissipation device and the external environment, and heat dissipation is achieved. The situation that heat is concentrated in the area where the power device is located and cannot be effectively dissipated, and consequently the power device fails due to over-high temperature rise is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of household energy storage appliances, and more specifically, to an inverter and an energy storage system. Background Art

[0002] Currently, in the related art, an inverter generally uses a ceramic gasket to transfer the heat generated by an IGBT (Insulated Gate Bipolar Transistor) to a radiator for heat dissipation.

[0003] Since the IGBT itself is relatively small, that is, a single-sided small-area heat source is in contact with the radiator for heat dissipation, the heat dissipation effect is poor. If the heat dissipation requirement is to be met, the size of the radiator needs to be increased to increase the heat exchange area. However, increasing the size of the radiator will increase the weight of the inverter and reduce the reliability of the inverter. Summary of the Utility Model

[0004] An embodiment of the utility model aims to solve at least one of the technical problems existing in the prior art.

[0005] To this end, a first aspect of an embodiment of the utility model provides an inverter.

[0006] A second aspect of an embodiment of the utility model provides an energy storage system.

[0007] In view of this, according to a first aspect of an embodiment of the utility model, an inverter is provided, which includes: a body; a power device disposed inside the body; a heat dissipation device disposed outside the body; and a heat conduction layer disposed on the power device and at least partially located between the power device and the heat dissipation device, and the heat conduction layer is in fit with the power device; wherein at least a part of the heat conduction layer includes a graphene film layer.

[0008] The inverter provided by the embodiment of the utility model includes a body, a power device, a heat dissipation device and a heat conduction layer. It can be understood that during the operation of the inverter, the power device will generate heat. Under certain working conditions, the power and heat consumption of the power device will be very high, resulting in a rapid increase in the heat of a single area of the power device and a rapid rise in the temperature of the power device. If the heat dissipation is not timely or the heat dissipation effect is poor, it is easy to cause the failure of the power device, and then cause the failure of the inverter and the entire energy storage system.

[0009] At least a part of the heat conduction layer includes a graphene film layer. It can be understood that the graphene film layer has the characteristics of high thermal conductivity, low temperature rise, good flexibility, high fitting degree and not easy to break. Among them, the lateral thermal conductivity of the graphene film layer can reach 1900 W / (m·k), that is, the graphene film layer has a high thermal conductivity in the thickness direction perpendicular to the graphene film layer.

[0010] Since the heat-conducting layer is disposed on the power device, and at least a part of the heat-conducting layer is located between the power device and the heat dissipation device, that is to say, when the heat generated by the power device is transferred to the graphene film layer, the heat is rapidly transferred in the thickness direction perpendicular to the graphene film layer and dispersed to the periphery of the graphene film layer, and then transferred to the heat dissipation device, and heat exchange is carried out with the external environment through the heat dissipation device to achieve heat dissipation, avoiding the situation that heat is concentrated in the area where the power device is located and cannot be effectively dissipated, thereby causing the temperature of the power device to rise too high and resulting in failure, making the temperature of the overall graphene film layer roughly the same, achieving the purpose of quickly balancing the heat generated by the power device, meeting the heat dissipation requirements of high-power and high-heat-consumption inverters, being beneficial to extending the service life of the inverter, and improving the reliability of the inverter.

[0011] Moreover, the heat-conducting layer is in direct contact with the power device, which can significantly improve the efficiency of heat transfer, avoid the temperature of the power device from rising too high, and improve the heat dissipation effect.

[0012] In addition, it can be understood that during the use of the inverter of the energy storage system, it is generally installed and fixed by hanging on the wall or stacking. By using the heat-conducting layer with at least part being the graphene film layer to dissipate heat from the power device, compared with increasing the size of the radiator to meet the heat dissipation requirements in the related art, it is beneficial to reduce the overall weight of the inverter, make the product lightweight while meeting the heat dissipation requirements, and further improve the reliability of the inverter.

[0013] The heat-conducting layer is attached to the power device, so that the heat generated by the power device can be transferred to the heat-conducting layer as much as possible, which can significantly improve the heat exchange efficiency.

[0014] Optionally, the whole heat-conducting layer is a graphene film layer. Or, the heat-conducting layer includes a heat-conducting film layer and a graphene film layer, the heat-conducting film layer is located between the power device and the graphene film layer, or the graphene film layer is located between the heat-conducting film layer and the power device. It can be specifically set according to actual needs.

[0015] Optionally, the density of the graphene film layer is 0.7 g / cm 3 ~2.1 g / cm 3 。

[0016] Optionally, the density of the graphene film layer is 1.7 g / cm 3 ~2.0 g / cm 3 。

[0017] Optionally, the lateral thermal conductivity of the graphene film layer is less than or equal to 1900 W / (m·K). Optionally, the lateral thermal conductivity of the graphene film layer ranges from 1100 W / (m·K) to 1600 W / (m·K), the longitudinal thermal conductivity is 10 W / (m·K), it can withstand high temperatures up to 400 °C, the flame retardant grade is V0, it has high flexibility, and the number of bending times is greater than 10,000 times without breaking.

[0018] In addition, the inverter provided by the above technical solution of the present invention further has the following additional technical features:

[0019] In some technical solutions, optionally, the body is provided with an avoidance opening, and the heat conducting layer and the heat dissipating device are respectively located on both sides of the avoidance opening.

[0020] In this technical solution, it is defined that the body is provided with an avoidance opening. Specifically, the heat conducting layer and the heat dissipating device are respectively located on both sides of the avoidance opening. That is to say, when the heat generated by the power device is transferred to the heat conducting layer, the heat is directly transferred to the heat dissipating device through the avoidance opening, which is beneficial to further improving the heat transfer efficiency and enhancing the heat dissipation effect.

[0021] In some technical solutions, optionally, at least a part of the heat conducting layer is attached to the heat dissipating device through the avoidance opening.

[0022] In this technical solution, it is defined that at least a part of the heat conducting layer is attached to the heat dissipating device through the avoidance opening, so that the heat transferred to the heat conducting layer can be transferred to the heat dissipating device as much as possible, and rapid heat dissipation is achieved through the heat exchange between the heat dissipating device and the external environment. This is beneficial to further improving the heat exchange efficiency, thereby enhancing the heat dissipation effect, meeting the heat dissipation requirements of high-power and high-heat-consumption inverters, and enhancing the product competitiveness.

[0023] In some technical solutions, optionally, the heat dissipating device includes a substrate and a plurality of heat dissipating fins. Among them, the substrate is arranged on the outer side of the body, the plurality of heat dissipating fins are arranged at intervals, the first end of each heat dissipating fin is connected to the side of the substrate facing away from the body, and the second end of each heat dissipating fin extends in a direction away from the substrate.

[0024] In this technical solution, it is defined that the heat dissipating device includes a substrate and a plurality of heat dissipating fins. Specifically, the substrate is connected to the outer wall of the body, the plurality of heat dissipating fins are arranged at intervals on the side of the substrate facing away from the body, and the second end of each heat dissipating fin extends in a direction away from the substrate, so as to increase the heat exchange area between the heat dissipating device and the external environment, which is beneficial to further improving the heat exchange effect, quickly balancing the heat generated by the power device, meeting the heat dissipation requirements of high-power and high-heat-consumption inverters, and enhancing the stability and reliability of the inverter.

[0025] In some technical solutions, optionally, the extension length L of at least one heat dissipating fin satisfies 40 mm ≤ L ≤ 50 mm.

[0026] In this technical solution, the value range of the extension length of at least one heat sink is defined. For the inverter in the related art to meet the heat dissipation requirements, the fin height of the radiator is generally about 70 mm. By using a heat conduction layer with at least part being a graphene film layer for heat transfer between the power device and the heat dissipation device, while meeting the heat dissipation requirements of high-power and high-heat-consumption inverters, the extension length of the heat sink can be correspondingly reduced, that is, the extension length of at least one heat sink is between 40 mm and 50 mm, which is beneficial to reducing the production cost of the inverter. At the same time, it can also reduce the overall weight of the inverter, make the product lightweight, and further improve the reliability and product competitiveness of the inverter.

[0027] Optionally, the thickness of the substrate is about 10 mm.

[0028] In some technical solutions, optionally, the substrate is an aluminum substrate; and / or at least one heat sink is an aluminum heat sink.

[0029] In this technical solution, the substrate is an aluminum substrate, that is to say, the substrate is made of metallic aluminum, so as to ensure the heat dissipation effect while being beneficial to further reducing the weight of the whole machine and improving the stability and reliability of the inverter.

[0030] At least one heat sink is an aluminum heat sink, that is to say, at least one heat sink is made of metallic aluminum, so as to ensure the heat dissipation effect while being beneficial to further reducing the weight of the whole machine and improving the stability and reliability of the inverter.

[0031] In some technical solutions, optionally, the cross-sectional area of the heat conduction layer in the direction perpendicular to its thickness is greater than or equal to the area of the side of the power device facing the heat conduction layer.

[0032] In this technical solution, it is defined that the cross-sectional area of the heat conduction layer in the direction perpendicular to its thickness is greater than or equal to the area of the side of the power device facing the heat conduction layer, that is, to increase the cross-sectional area of the heat conduction layer, thereby increasing the contact area between the heat conduction layer and the power device, so that the heat generated by the power device can be transferred to the heat conduction layer as much as possible, and the heat exchange efficiency is improved.

[0033] Moreover, the heat quickly spreads in the direction perpendicular to the thickness of the graphene film layer and disperses to the periphery of the graphene film layer, avoiding the heat concentrating in the area where the power device is located and being unable to be effectively dissipated, which may lead to the situation that the temperature of the power device rises too high and fails, meeting the heat dissipation requirements of high-power and high-heat-consumption inverters.

[0034] In some technical solutions, optionally, the power device includes a circuit board and a transistor. Among them, the transistor is arranged on the circuit board and electrically connected to the circuit board. The heat conduction layer is arranged on the transistor and is in contact with the transistor, and at least part of the heat conduction layer is located between the transistor and the heat dissipation device.

[0035] In this technical solution, it is defined that the power device includes a transistor and a circuit board. Specifically, the transistor is electrically connected to the circuit board.

[0036] The heat-conducting layer is disposed on the transistor, and at least a part of the heat-conducting layer is located between the transistor and the heat dissipation device. That is to say, when the heat generated by the transistor is transferred to the heat-conducting layer, the heat is rapidly transferred in the thickness direction perpendicular to the heat-conducting layer and dispersed to the surrounding of the heat-conducting layer, and then the heat is transferred to the heat dissipation device, and heat exchange is performed with the external environment through the heat dissipation device to achieve heat dissipation.

[0037] Since at least a part of the heat-conducting layer includes a graphene film layer, it can avoid heat being concentrated in the area where the transistor is located and unable to be effectively dissipated, thereby causing the temperature of the transistor to rise too high and resulting in a failure situation, improving the heat dissipation efficiency, and further achieving the purpose of quickly balancing the heat generated by the transistor, meeting the heat dissipation requirements of high-power and high-heat-consumption inverters, and improving the stability and reliability of the inverter.

[0038] In some technical solutions, optionally, the power device further includes a fixing part, and the transistor is connected to the circuit board through the fixing part.

[0039] In this technical solution, it is defined that the power device further includes a fixing part. Specifically, the transistor is fixed on the circuit board through the fixing part. Optionally, the fixing part includes a fixing tooling, and the transistor is welded on the circuit board through the fixing tooling.

[0040] In some technical solutions, optionally, the thickness d of the graphene film layer satisfies 12μm ≤ d ≤ 100μm.

[0041] In this technical solution, the value range of the thickness of the graphene film layer is defined. Specifically, the thickness of the graphene film layer is between 12μm and 100μm to ensure the heat dissipation effect and meet the heat dissipation requirements of high-power and high-heat-consumption inverters.

[0042] Moreover, by using the heat-conducting layer with at least a part being a graphene film layer to dissipate heat of the power device, it is beneficial to reduce the overall weight of the inverter. While meeting the heat dissipation requirements, the product is made lightweight, further improving the stability and reliability of the inverter, and thus being beneficial to enhancing the product competitiveness.

[0043] According to the second aspect of the present invention, there is provided an energy storage system, including the inverter provided in any of the above technical solutions, and thus having all the beneficial technical effects of this inverter, which will not be elaborated herein.

[0044] The additional aspects and advantages of the present invention will be given in the following description part, some will become obvious from the following description, or will be understood through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] The above and / or additional aspects and advantages of the present utility model will become apparent and be readily understood from the following description of embodiments in conjunction with the accompanying drawings, wherein:

[0046] Figure 1 FIG. 6 shows a partial structural schematic diagram of an inverter according to an embodiment of the present utility model;

[0047] Figure 2 FIG. 10 shows a partial exploded view of an inverter according to an embodiment of the present utility model;

[0048] Figure 3 FIG. 14 shows one of the thermal simulation results diagrams of an inverter according to an embodiment of the present utility model;

[0049] Figure 4 FIG. 18 shows another thermal simulation results diagram of an inverter according to an embodiment of the present utility model.

[0050] Wherein, Figure 1 and Figure 2 The corresponding relationship between the reference numerals and the component names in the figures is as follows:

[0051] 100 inverter, 110 body, 111 avoidance opening, 120 power device, 121 circuit board, 122 transistor, 123 fixing part, 130 heat dissipation device, 131 substrate, 132 heat sink, 140 heat conduction layer, 141 graphene film layer. Detailed implementation manners

[0052] In order to more clearly understand the above objects, features and advantages of the present utility model, the present utility model will be further described in detail below in conjunction with the accompanying drawings and specific implementation manners. It should be noted that, without conflict, the embodiments of the present application and the features in the embodiments may be combined with each other.

[0053] In the following description, many specific details are set forth in order to fully understand the present utility model. However, the present utility model may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present utility model is not limited by the specific embodiments disclosed below.

[0054] The following refers to Figures 1 to 4 to describe the inverter 100 and the energy storage system provided according to some embodiments of the present utility model.

[0055] In an embodiment according to the present application, as Figure 1 and Figure 2As shown, an inverter 100 is proposed. The inverter 100 includes: a body 110; a power device 120 disposed within the body 110; a heat dissipation device 130 disposed outside the body 110; and a heat conduction layer 140 disposed on the power device 120 and at least partially located between the power device 120 and the heat dissipation device 130, the heat conduction layer 140 being in contact with the power device 120. Among them, at least a part of the heat conduction layer 140 includes a graphene film layer 141.

[0056] The inverter 100 provided by the embodiment of the present utility model includes a body 110, a power device 120, a heat dissipation device 130, and a heat conduction layer 140. It can be understood that during the operation of the inverter 100, the power device 120 generates heat. Under certain working conditions, the power and heat dissipation of the power device 120 are very high, causing the heat in a single area of the power device 120 to increase rapidly, and the temperature of the power device 120 to rise rapidly. If the heat dissipation is not timely or the heat dissipation effect is poor, it is easy to cause the power device 120 to fail, and then cause the inverter 100 and the entire energy storage system to fail.

[0057] At least a part of the heat conduction layer 140 includes a graphene film layer 141. It can be understood that the graphene film layer 141 has characteristics such as high thermal conductivity, low temperature rise, good flexibility, high adhesion, and not easy to break. Among them, the lateral thermal conductivity of the graphene film layer 141 can reach 1900 W / (m·k), that is, the graphene film layer 141 has a high thermal conductivity in the direction perpendicular to the thickness of the graphene film layer 141.

[0058] Since the heat conduction layer 140 is disposed on the power device 120 and at least a part of the heat conduction layer 140 is located between the power device 120 and the heat dissipation device 130, that is to say, when the heat generated by the power device 120 is transferred to the graphene film layer 141, the heat is rapidly transferred in the direction perpendicular to the thickness of the graphene film layer 141 and dispersed around the graphene film layer 141, and then transferred to the heat dissipation device 130. The heat dissipation device 130 exchanges heat with the external environment to achieve heat dissipation, avoiding the heat being concentrated in the area where the power device 120 is located and unable to be effectively dissipated, which may lead to the situation that the temperature rise of the power device 120 is too high and causes failure, making the temperature of the entire graphene film layer 141 roughly the same, achieving the purpose of quickly balancing the heat generated by the power device 120, meeting the heat dissipation requirements of high-power and high-heat dissipation inverters 100, being beneficial to extending the service life of the inverter 100, and improving the reliability of the inverter 100.

[0059] Moreover, the heat conduction layer 140 is in direct contact with the power device 120, which can significantly improve the efficiency of heat transfer, avoid the temperature rise of the power device 120 being too high, and improve the heat dissipation effect.

[0060] In addition, it can be understood that during the use of the inverter 100 of the energy storage system, it is generally installed and fixed by hanging on the wall or stacking. By using the heat conduction layer 140 at least partially made of the graphene film layer 141 for heat dissipation of the power device 120, compared with the related art where the heat dissipation requirement is met by increasing the size of the radiator, it is beneficial to reduce the overall weight of the inverter 100, make the product lightweight while meeting the heat dissipation requirement, and further improve the reliability of the inverter 100.

[0061] The heat conduction layer 140 is attached to the power device 120, so that as much heat generated by the power device 120 as possible can be transferred to the heat conduction layer 140, significantly improving the heat exchange efficiency.

[0062] Optionally, the entire heat conduction layer 140 is the graphene film layer 141. Or, the heat conduction layer 140 includes a heat conduction film layer and the graphene film layer 141, and the heat conduction film layer is located between the power device 120 and the graphene film layer 141, or the graphene film layer 141 is located between the heat conduction film layer and the power device 120. It can be specifically set according to actual needs.

[0063] Optionally, the density of the graphene film layer 141 is 0.7 g / cm 3 ~2.1 g / cm 3 。

[0064] Optionally, the density of the graphene film layer 141 is 1.7 g / cm 3 ~2.0 g / cm 3 。

[0065] Optionally, the in-plane thermal conductivity of the graphene film layer 141 is less than or equal to 1900 W / (m·K). Optionally, the in-plane thermal conductivity of the graphene film layer 141 is between 1100 W / (m·K) and 1600 W / (m·K), the through-plane thermal conductivity is 10 W / (m·K), and it can withstand high temperatures up to 400 °C, the flame retardant grade is V0, it has high flexibility, the number of bending times is greater than 10,000 times and it does not break, as shown in the following table:

[0066]

[0067]

[0068] It can be understood that when the junction temperature of the power device 120 is 140°C, that is, when the temperature of the power device 120 exceeds 140°C, the power device 120 will fail, thereby causing the entire energy storage system to fail. In the related art, ceramic gaskets and thermal conductive greases are used to transfer the heat generated by the IGBT to the radiator. The transfer surface is small, and the horizontal thermal conductivity of the alumina ceramic gasket is 18 W / (m·k) to 35 W / (m·k). Even if the area of the ceramic gasket is increased, it is impossible to effectively transfer the heat to the entire surface.

[0069] As Figure 3 shown, a heat conduction layer 140 at least partially composed of a graphene film layer 141 is used for heat transfer between the power device 120 and the heat dissipation device 130. The highest temperature is 112.3°C, which significantly improves the heat dissipation effect compared with using ceramic gaskets for heat transfer in the related art.

[0070] As Figure 2 shown, in some embodiments, optionally, the body 110 is provided with an avoidance opening 111, and the heat conduction layer 140 and the heat dissipation device 130 are respectively located on both sides of the avoidance opening 111.

[0071] In this embodiment, it is defined that the body 110 is provided with an avoidance opening 111. Specifically, the heat conduction layer 140 and the heat dissipation device 130 are respectively located on both sides of the avoidance opening 111. That is to say, when the heat generated by the power device 120 is transferred to the heat conduction layer 140, the heat is directly transferred to the heat dissipation device 130 through the avoidance opening 111, which is beneficial to further improving the heat transfer efficiency and the heat dissipation effect.

[0072] In some embodiments, optionally, at least a part of the heat conduction layer 140 is attached to the heat dissipation device 130 through the avoidance opening 111.

[0073] In this embodiment, it is defined that at least a part of the heat conduction layer 140 is attached to the heat dissipation device 130 through the avoidance opening 111, so that as much heat as possible transferred to the heat conduction layer 140 can be transferred to the heat dissipation device 130. The heat is quickly dissipated through the heat exchange between the heat dissipation device 130 and the external environment, which is beneficial to further improving the heat exchange efficiency, and then improving the heat dissipation effect, meeting the heat dissipation requirements of high-power and high-heat-consumption inverters 100, and enhancing the product competitiveness.

[0074] As Figure 1 shown, in some embodiments, optionally, the heat dissipation device 130 includes a substrate 131 and a plurality of heat sinks 132. Among them, the substrate 131 is disposed outside the body 110, and the plurality of heat sinks 132 are arranged at intervals. The first end of each heat sink 132 is connected to the side of the substrate 131 facing away from the body 110, and the second end of each heat sink 132 extends in a direction away from the substrate 131.

[0075] In this embodiment, it is defined that the heat dissipation device 130 includes a substrate 131 and a plurality of heat sinks 132. Specifically, the substrate 131 is connected to the outer wall of the body 110, and the plurality of heat sinks 132 are arranged at intervals on the side of the substrate 131 facing away from the body 110, and the second end of each heat sink 132 extends in a direction away from the substrate 131, so as to increase the heat exchange area between the heat dissipation device 130 and the external environment, which is beneficial to further improving the heat exchange effect, quickly balancing the heat generated by the power device 120, meeting the heat dissipation requirements of the high-power and high-heat-consumption inverter 100, and improving the stability and reliability of the inverter 100.

[0076] As Figure 1 shown, in some embodiments, optionally, the extension length L of at least one heat sink 132 satisfies 40 mm ≤ L ≤ 50 mm.

[0077] In this embodiment, the value range of the extension length of at least one heat sink 132 is defined. For the inverter in the related art to meet the heat dissipation requirements, the fin height of the radiator is generally about 70 mm. The heat conduction layer 140 with at least part being the graphene film layer 141 is used for heat transfer between the power device 120 and the heat dissipation device 130. While meeting the heat dissipation requirements of the high-power and high-heat-consumption inverter 100, the extension length of the heat sink 132 can be correspondingly reduced, that is, the extension length of at least one heat sink 132 is between 40 mm and 50 mm, which is beneficial to reducing the production cost of the inverter 100. At the same time, it can also reduce the overall weight of the inverter 100, make the product lightweight, and further improve the reliability and product competitiveness of the inverter 100.

[0078] Optionally, the thickness of the substrate 131 is about 10 mm.

[0079] As Figure 3 shown, the heat conduction layer 140 with at least part being the graphene film layer 141 is used for heat transfer between the power device 120 and the heat dissipation device 130. Among them, the extension length of the heat sink 132 is 70 mm, and the highest temperature is 112.3 °C.

[0080] As Figure 4 shown, the heat conduction layer 140 with at least part being the graphene film layer 141 is used for heat transfer between the power device 120 and the heat dissipation device 130. Among them, the extension length of the heat sink 132 is 50 mm, that is, the extension length of the heat sink 132 is reduced by 20 mm. The highest temperature is 120.2 °C. While meeting the heat dissipation requirements, it reduces the production cost of the inverter 100, reduces the weight of the whole machine, and improves the reliability of the inverter 100.

[0081] In some embodiments, optionally, the substrate 131 is an aluminum substrate; and / or at least one heat sink 132 is an aluminum heat sink.

[0082] In this embodiment, the substrate 131 is an aluminum substrate, that is to say, the substrate 131 is made of metallic aluminum, so that while ensuring the heat dissipation effect, it is beneficial to further reduce the weight of the whole machine and improve the stability and reliability of the inverter 100.

[0083] At least one heat sink 132 is an aluminum heat sink, that is to say, at least one heat sink 132 is made of metallic aluminum, so that while ensuring the heat dissipation effect, it is beneficial to further reduce the weight of the whole machine and improve the stability and reliability of the inverter 100.

[0084] In some embodiments, optionally, the cross-sectional area of the heat conduction layer 140 in the direction perpendicular to its thickness is greater than or equal to the area of the side of the power device 120 facing the heat conduction layer 140.

[0085] In this embodiment, it is defined that the cross-sectional area of the heat conduction layer 140 in the direction perpendicular to its thickness is greater than or equal to the area of the side of the power device 120 facing the heat conduction layer 140, that is, the cross-sectional area of the heat conduction layer 140 is increased, so as to increase the contact area between the heat conduction layer 140 and the power device 120, enabling the heat generated by the power device 120 to be transferred to the heat conduction layer 140 as much as possible and improving the heat exchange efficiency.

[0086] Moreover, the heat quickly spreads in the direction perpendicular to the thickness of the graphene film layer 141 and disperses to the periphery of the graphene film layer 141, preventing the heat from concentrating in the area where the power device 120 is located and being unable to dissipate effectively, which may otherwise lead to the situation that the temperature of the power device 120 rises too high and fails, meeting the heat dissipation requirements of the high-power and high-heat-consumption inverter 100.

[0087] As Figure 1 shown, in some embodiments, optionally, the power device 120 includes a circuit board 121 and a transistor 122. Among them, the transistor 122 is arranged on the circuit board 121 and electrically connected to the circuit board 121. The heat conduction layer 140 is arranged on the transistor 122 and is in contact with the transistor 122, and at least part of the heat conduction layer 140 is located between the transistor 122 and the heat dissipation device 130.

[0088] In this embodiment, it is defined that the power device 120 includes a transistor 122 and a circuit board 121. Specifically, the transistor 122 is electrically connected to the circuit board 121.

[0089] The heat-conducting layer 140 is disposed on the transistor 122, and at least a part of the heat-conducting layer 140 is located between the transistor 122 and the heat dissipation device 130. That is to say, when the heat generated by the transistor 122 is transferred to the heat-conducting layer 140, the heat is rapidly transferred in the thickness direction perpendicular to the heat-conducting layer 140 and dispersed to the periphery of the heat-conducting layer 140, and then the heat is transferred to the heat dissipation device 130, and heat exchange is performed with the external environment through the heat dissipation device 130 to achieve heat dissipation.

[0090] Since at least a part of the heat-conducting layer 140 includes the graphene film layer 141, it can prevent heat from concentrating in the area where the transistor 122 is located and cannot be effectively dissipated, thereby causing the temperature of the transistor 122 to rise too high and resulting in failure, improving the heat dissipation efficiency, and further achieving the purpose of quickly balancing the heat generated by the transistor 122, meeting the heat dissipation requirements of the high-power and high-heat-consumption inverter 100, and improving the stability and reliability of the inverter 100.

[0091] As Figure 1 shown, in some embodiments, optionally, the power device 120 further includes a fixing portion 123, and the transistor 122 is connected to the circuit board 121 through the fixing portion 123.

[0092] In this embodiment, it is defined that the power device 120 further includes a fixing portion 123. Specifically, the transistor 122 is fixed on the circuit board 121 through the fixing portion 123. Optionally, the fixing portion 123 includes a fixing tooling, and the transistor 122 is welded to the circuit board 121 through the fixing tooling.

[0093] In some embodiments, optionally, the thickness d of the graphene film layer 141 satisfies 12μm ≤ d ≤ 100μm.

[0094] In this embodiment, the value range of the thickness of the graphene film layer 141 is defined. Specifically, the thickness of the graphene film layer 141 is between 12μm and 100μm, ensuring the heat dissipation effect and meeting the heat dissipation requirements of the high-power and high-heat-consumption inverter 100.

[0095] Moreover, by using the heat-conducting layer 140 with at least part being the graphene film layer 141 to dissipate heat from the power device 120, it is beneficial to reduce the overall weight of the inverter 100. While meeting the heat dissipation requirements, the product is made lighter, further improving the stability and reliability of the inverter 100, and thus being beneficial to enhancing the product competitiveness.

[0096] According to the second aspect of the present invention, there is provided an energy storage system, including the inverter 100 provided in any of the above embodiments, and thus having all the beneficial technical effects of the inverter 100, which will not be elaborated herein.

[0097] In the description of this specification, terms such as "connection", "installation", "fixation", etc. should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in this utility model can be understood according to specific circumstances.

[0098] In the description of this specification, the description of terms such as "one embodiment", "some embodiments", "specific embodiments", etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of this utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or instance. Moreover, the specific features, structures, materials or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0099] The above are only the preferred embodiments of this utility model and are not used to limit this utility model. For those skilled in the art, this utility model can have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of this utility model shall be included within the protection scope of this utility model.

Claims

1. An inverter, characterized in that, Comprising: A body; A power device disposed within the body; A heat dissipation device disposed outside the body; A heat conducting layer disposed on the power device and at least partially located between the power device and the heat dissipation device, the heat conducting layer being in contact with the power device; Wherein at least a part of the heat conducting layer comprises a graphene film layer.

2. The inverter according to claim 1, wherein The body is provided with an avoidance opening, and the heat conducting layer and the heat dissipation device are respectively located on both sides of the avoidance opening.

3. The inverter according to claim 2, characterized in that, At least a part of the heat conducting layer is in contact with the heat dissipation device through the avoidance opening.

4. The inverter according to any one of claims 1 to 3, characterized in that The heat dissipation device includes: A substrate disposed outside the body; A plurality of heat dissipation fins, the plurality of heat dissipation fins being spaced apart, a first end of each heat dissipation fin being connected to a side of the substrate facing away from the body, and a second end of each heat dissipation fin extending in a direction away from the substrate.

5. The inverter according to claim 4, wherein, The extension length L of at least one of the heat dissipation fins satisfies 40 mm ≤ L ≤ 50 mm.

6. The inverter according to claim 4, wherein The substrate is an aluminum substrate; and / or At least one of the heat dissipation fins is an aluminum heat dissipation fin.

7. The inverter according to any one of claims 1 to 3, characterized in that, The cross-sectional area of the heat conducting layer in a direction perpendicular to the thickness direction is greater than or equal to the area of a side surface of the power device facing the heat conducting layer.

8. The inverter according to any one of claims 1 to 3, characterized in that, The power device includes: A circuit board; A transistor disposed on the circuit board and electrically connected to the circuit board, the heat conducting layer being disposed on the transistor and in contact with the transistor, and at least a part of the heat conducting layer being located between the transistor and the heat dissipation device.

9. The inverter according to claim 8, characterized in that, The power device further includes: A fixing portion, and the transistor is connected to the circuit board through the fixing portion.

10. The inverter according to any one of claims 1 to 3, characterized in that, The thickness d of the graphene film layer satisfies 12 μm ≤ d ≤ 100 μm.

11. An energy storage system, characterized in that, Including the inverter according to any one of claims 1 to 10.

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