Semiconductor laser shaping module

Abstract

The utility model relates to the field of semiconductors, in particular to a semiconductor laser shaping module, which comprises a laser diode, a concave lens, a homogenizing sheet, a convex lens and an optical filter which are sequentially arranged from left to right, the concave lens diverges light beams emitted by the laser diode; the homogenization effect is optimized by changing the distance between the homogenization sheet and the laser diode; and the convex lens is placed at the focus of the concave lens. According to the utility model, the problems existing when the laser diode is used as the excitation light source of the fluorescence microscope in the prior art can be effectively solved, and a new solution is provided for the imaging of the fluorescence microscope.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, and particularly to a semiconductor laser shaping module. Background Art

[0002] As an important biomedical imaging tool, fluorescence microscopes are widely used in the fields of cell biology, genetics, pathology, etc. In a fluorescence microscope, after a fluorophore is excited by light of a specific wavelength, it emits light of a longer wavelength. By detecting this emitted light, a high-resolution image of the sample can be obtained. Traditional fluorescence microscopes usually use mercury lamps or xenon lamps as excitation light sources. With the development of semiconductor technology, semiconductor laser diodes (LDs) have gradually become the preferred excitation light sources in fluorescence microscopes due to their advantages such as small size, low energy consumption, and long lifespan.

[0003] The light-emitting mechanism of the laser diode results in inconsistent divergence angles in the sagittal and meridional directions. Generally, the divergence angle in the sagittal direction is about 20°, while the divergence angle in the meridional direction is about 10°. This directional asymmetry and the large divergence angle cause the light spot generated by the laser diode to be Gaussian-distributed, which will cause a decline in image quality due to non-uniform illumination in fluorescence microscope imaging. The content of the decline in image quality mainly includes uneven brightness, reduced resolution, and reduced signal-to-noise ratio, etc. In addition, the Gaussian beam characteristic of the laser diode will also cause hot spots to appear on the sample, which may cause damage to biological samples, especially under long-term exposure or high-power irradiation.

[0004] To solve the above problems, various beam shaping technologies have been proposed in the prior art, including using beam shapers, diffuser plates, lens systems, etc. However, these technologies have problems such as large volume, high cost, and complex adjustment, which limit their application in fluorescence microscope imaging systems. Summary of the Utility Model

[0005] The purpose of the utility model is to propose a semiconductor laser shaping module for the problems of large volume, high cost, and complex adjustment of the beam shaping device in the background art.

[0006] The technical solution of the utility model: A semiconductor laser shaping module includes a laser diode, a concave lens, a homogenizing plate, a convex lens, and a filter arranged in sequence from left to right; the concave lens diverges the beam emitted by the laser diode; the homogenizing effect is optimized by changing the distance between the homogenizing plate and the laser diode; the convex lens is placed at the focal point of the concave lens.

[0007] Preferably, the laser diode is installed on a tight optical platform, and the beam emitted by the laser diode is aligned with the optical axis of the shaping module.

[0008] Preferably, the laser diode is a semiconductor laser diode.

[0009] Preferably, a semiconductor laser diode with a wavelength of 488 nm is selected as the light source for the laser diode. The divergence angle of the laser diode in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°.

[0010] Preferably, a semiconductor laser diode with a wavelength of 488 nm is selected as the light source for the laser diode. The divergence angle of the laser diode in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°; a diffuser with 280 meshes is used as the homogenizer; the central wavelength of the filter is 488 nm, and the bandwidth is ±10 nm; the diameter of the concave lens is 5 mm, and the focal length is -1.88 mm; the diameter of the convex lens is 25.4 mm, and the focal length is 16 mm, generating a uniform light spot with a diameter of 5 - 30 mm; the surfaces of the concave lens, the homogenizer, the convex lens, and the filter are all coated with multiple anti-reflection films.

[0011] Preferably, a semiconductor laser diode with a wavelength of 488 nm is selected as the light source for the laser diode. The divergence angle of the laser diode in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°; a diffuser with 1000 meshes is used as the homogenizer; the central wavelength of the filter is 488 nm, and the bandwidth is ±20 nm; the diameter of the concave lens is 5 mm, and the focal length is -2.77 mm; the diameter of the convex lens is 20.8 mm, and the focal length is 30 mm; the surfaces of the concave lens, the homogenizer, the convex lens, and the filter are all coated with multiple anti-reflection films.

[0012] Preferably, a semiconductor laser diode with a wavelength of 488 nm is selected as the light source for the laser diode. The divergence angle of the laser diode in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°; a diffuser with 500 meshes is used as the homogenizer; the central wavelength of the filter is 488 nm, and the bandwidth is ±30 nm; the diameter of the concave lens is 5 mm, and the focal length is -5.24 mm; the diameter of the convex lens is 24.7 mm, and the focal length is 32 mm; the surfaces of the concave lens, the homogenizer, the convex lens, and the filter are all coated with multiple anti-reflection films.

[0013] Compared with the prior art, the utility model has the following beneficial technical effects:

[0014] 1. Small volume design, facilitating integration into the existing fluorescence microscope system;

[0015] 2. Low cost, suitable for large-scale production and application;

[0016] 3. Easy to adjust and maintain, improving the stability and reliability of the system;

[0017] 4. Applicable to laser diodes of multiple wavelengths, with good versatility;

[0018] 5. Significantly improving the quality and efficiency of fluorescence microscope imaging. Brief Description of the Drawings

[0019] Figure 1 It is a schematic structural diagram of an embodiment of the present utility model;

[0020] Figure 2 It is a schematic structural diagram of the second embodiment of the present utility model;

[0021] Figure 3 It is a schematic structural diagram of the third embodiment of the present utility model;

[0022] Figure 4 It is a schematic structural diagram of the fourth embodiment of the present utility model;

[0023] Figure 5 It is a schematic diagram of the amplitude distribution of the second embodiment of the present utility model;

[0024] Figure 6 It is a schematic diagram of the amplitude distribution of the third embodiment of the present utility model;

[0025] Figure 7 It is a schematic diagram of the amplitude distribution of the fourth embodiment of the present utility model.

[0026] Reference numerals: 1, laser diode; 2, concave lens; 3, homogenizing sheet; 4, convex lens; 5, filter. Detailed Description of the Embodiments

[0027] Embodiment 1

[0028] As Figure 1 shown, a semiconductor laser shaping module proposed by the present utility model includes a laser diode 1, a concave lens 2, a homogenizing sheet 3, a convex lens 4, and a filter 5 arranged in sequence from left to right; the concave lens 2 is an ultra-short focal length concave lens, and the concave lens 2 diverges the light beam emitted by the laser diode 1; the homogenizing effect is optimized by changing the distance between the homogenizing sheet 3 and the laser diode 1; the convex lens 4 is placed at the focal point of the concave lens 2, and by adjusting the distance between the convex lens 4 and the concave lens 2, the collimation of the light beam is achieved, and a required uniform light spot is formed; the filter 5 is a band-pass filter for screening out light of the required wavelength.

[0029] The laser diode 1 is installed on a tight optical platform, the light beam emitted by the laser diode 1 is aligned with the optical axis of the shaping module, the laser diode 1 is a semiconductor laser diode, and further, the laser diode 1 selects a highly stable semiconductor laser diode with a wavelength of 488 nm as the light source, and the divergence angle of the laser diode 1 in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°.

[0030] Embodiment 2

[0031] As Figure 2 and Figure 5As shown, a semiconductor laser shaping module proposed by the present utility model. Compared with Embodiment 1, this embodiment details an implementation structure.

[0032] The laser diode 1 selects a highly stable semiconductor laser diode with a wavelength of 488 nm as the light source. The divergence angle of the laser diode 1 in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°. The homogenizing sheet 3 uses a 280-mesh scattering sheet to effectively shape the Gaussian beam and generate a uniform flat-top beam. The center wavelength of the filter 5 is 488 nm, and the bandwidth is ±10 nm to ensure that only the light energy near the center wavelength can pass through to excite the fluorescent sample. The diameter of the concave lens 2 is 5 mm, and the focal length is -1.88 mm to increase the divergence angle of the beam and prepare for subsequent beam shaping. The diameter of the convex lens 4 is 25.4 mm, and the focal length is 16 mm to collimate the diverged beam and generate a uniform light spot with a diameter of 5 - 30 mm. The surfaces of the concave lens 2, the homogenizing sheet 3, the convex lens 4, and the filter 5 are all coated with multiple anti-reflection films to improve the light transmittance and reduce the reflection loss, especially near the 488-nm wavelength.

[0033] Embodiment 3

[0034] As Figure 3 and Figure 6 shown, a semiconductor laser shaping module proposed by the present utility model. Compared with Embodiment 1, this embodiment details a second implementation structure.

[0035] The laser diode 1 selects a highly stable semiconductor laser diode with a wavelength of 488 nm as the light source. The divergence angle of the laser diode 1 in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°. The homogenizing sheet 3 uses a 1000-mesh scattering sheet to obtain a higher-quality flat-top beam. The center wavelength of the filter 5 is 488 nm, and the bandwidth is ±20 nm to adapt to fluorescent samples with a wider spectral range. The diameter of the concave lens 2 is 5 mm, and the focal length is -2.77 mm to further optimize the divergence characteristics of the beam and adapt to different sample illumination requirements. The diameter of the convex lens 4 is 20.8 mm, and the focal length is 30 mm to adapt to different imaging systems and provide a larger working distance. The surfaces of the concave lens 2, the homogenizing sheet 3, the convex lens 4, and the filter 5 are all coated with multiple anti-reflection films to improve the light transmittance and reduce the reflection loss, especially near the 488-nm wavelength.

[0036] Embodiment 4

[0037] As Figure 4 and Figure 7 shown, a semiconductor laser shaping module proposed by the present utility model. Compared with Embodiment 1, this embodiment introduces a third implementation structure.

[0038] The laser diode 1 selects a highly stable semiconductor laser diode with a wavelength of 488 nm as the light source. The divergence angle of the laser diode 1 in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°; the homogenizing plate 3 uses a 500-mesh diffuser to balance the beam shaping effect and cost, and is suitable for illuminating a variety of fluorescent samples; the center wavelength of the filter 5 is 488 nm, and the bandwidth is ±30 nm to accommodate more diverse fluorescent samples and excitation requirements; the diameter of the concave lens 2 is 5 mm, and the focal length is -5.24 mm to achieve a larger divergence angle and optimize the spot distribution; the diameter of the convex lens 4 is 24.7 mm, and the focal length is 32 mm to provide better spot quality and higher imaging accuracy; the surfaces of the concave lens 2, the homogenizing plate 3, the convex lens 4, and the filter 5 are all coated with multiple anti-reflection films to improve the light transmittance and reduce the reflection loss, especially near the wavelength of 488 nm.

[0039] In summary, when the present utility model is in use, the laser diode 1 is installed on a precision optical platform, and it is ensured that the emitted beam is aligned with the optical axis of the module. The filter 5 is tightly installed at the output end of the laser diode 1 to screen out the light of the required wavelength. The homogenizing plate 3 is placed behind the filter 5, and by adjusting the distance between the homogenizing plate 3 and the laser diode 1, the homogenizing effect of the beam is optimized. The concave lens 2 is placed behind the homogenizing plate 3, and by adjusting its position, it is ensured that the beam can be effectively diverged. Finally, the convex lens 4 is placed at the focal point of the concave lens 2, and by adjusting the distance between it and the concave lens 2, the collimation of the beam is achieved, and the required uniform spot is formed. During operation, the laser diode 1 is started to generate laser light. The laser light passes through the filter 5 to ensure that only the light with a center wavelength of 488 nm passes through. After passing through the homogenizing plate 3 and the concave lens 2, the beam is shaped and diverged to meet the illumination requirements of the fluorescent sample. The convex lens 4 collimates the diverged beam to form a uniform spot for illuminating the sample of the fluorescence microscope. Through the detection system of the fluorescence microscope, the fluorescence emitted by the sample is collected, and a high-resolution image is generated. The configuration and parameter selection of each optical element are all aimed at achieving a high-efficiency and high-uniformity beam shaping effect to meet the requirements of different fluorescence microscope imaging applications.

[0040] The embodiments of the present utility model have been described in detail above in conjunction with the accompanying drawings. However, the present utility model is not limited thereto. Various changes can be made without departing from the gist of the present utility model within the knowledge scope of those skilled in the art to which it pertains.

Claims

1. A semiconductor laser shaping module, characterized in that It includes a laser diode (1), a concave lens (2), a homogenizing sheet (3), a convex lens (4), and a filter (5) arranged in sequence from left to right; the concave lens (2) diverges the light beam emitted by the laser diode (1); the homogenizing effect is optimized by changing the distance between the homogenizing sheet (3) and the laser diode (1); the convex lens (4) is placed at the focal point of the concave lens (2).

2. The semiconductor laser shaping module according to claim 1, wherein The laser diode (1) is installed on a compact optical platform, and the light beam emitted by the laser diode (1) is aligned with the optical axis of the shaping module.

3. The semiconductor laser shaping module according to claim 1, characterized in that, The laser diode (1) is a semiconductor laser diode.

4. The semiconductor laser shaping module according to claim 1, wherein, The laser diode (1) selects a semiconductor laser diode with a wavelength of 488 nm as the light source. The divergence angle of the laser diode (1) in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°.

5. The semiconductor laser shaping module according to claim 1, characterized in that The laser diode (1) selects a semiconductor laser diode with a wavelength of 488 nm as the light source. The divergence angle of the laser diode (1) in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°; the homogenizing sheet (3) is a 280-mesh diffuser; the center wavelength of the filter (5) is 488 nm, and the bandwidth is ±10 nm; the diameter of the concave lens (2) is 5 mm, and the focal length is -1.88 mm; the diameter of the convex lens (4) is 25.4 mm, and the focal length is 16 mm, generating a uniform light spot with a diameter of 5 - 30 mm; the surfaces of the concave lens (2), the homogenizing sheet (3), the convex lens (4), and the filter (5) are all coated with multiple anti-reflection films.

6. The semiconductor laser shaping module according to claim 1, characterized in that, The laser diode (1) selects a semiconductor laser diode with a wavelength of 488 nm as the light source. The divergence angle of the laser diode (1) in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°; the homogenizing sheet (3) is a 1000-mesh diffuser; the center wavelength of the filter (5) is 488 nm, and the bandwidth is ±20 nm; the diameter of the concave lens (2) is 5 mm, and the focal length is -2.77 mm; the diameter of the convex lens (4) is 20.8 mm, and the focal length is 30 mm; the surfaces of the concave lens (2), the homogenizing sheet (3), the convex lens (4), and the filter (5) are all coated with multiple anti-reflection films.

7. The semiconductor laser shaping module according to claim 1, wherein The laser diode (1) selects a semiconductor laser diode with a wavelength of 488 nm as the light source. The divergence angle of the laser diode (1) in the sagittal direction is 23°, and the divergence angle in the meridional direction is 8°; the homogenizing sheet (3) is a 500-mesh diffuser; the center wavelength of the filter (5) is 488 nm, and the bandwidth is ±30 nm; the diameter of the concave lens (2) is 5 mm, and the focal length is -5.24 mm; the diameter of the convex lens (4) is 24.7 mm, and the focal length is 32 mm; the surfaces of the concave lens (2), the homogenizing sheet (3), the convex lens (4), and the filter (5) are all coated with multiple anti-reflection films.

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