High-efficiency multi-energy layer ion source implanter

Abstract

The utility model provides a high-efficiency multi-energy layer ion source implanter, which comprises an ion beam current system and a target table, the ion beam current system comprises a gas box, an ion source, a mass analyzer and an accelerating tube which are connected in sequence, the gas box and the ion source generate ion beams, impurity ions are screened out by the mass analyzer, and then the ion beams are accelerated by the accelerating tube to be ejected out; a containing part is arranged on the target table and is aligned to the outlet of the accelerating tube, a plurality of locking pieces are arranged on the edge of the containing part in the circumferential direction, an adjusting space is formed in the target table, an adjusting rod is inserted into the adjusting space, and the locking pieces can be pressed to move by rotating the adjusting rod so that the locking pieces can be loosened or locked. According to the technical scheme, the wafer replacement speed can be increased, the equipment waiting time is shortened, and the production efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of ion implantation equipment, and particularly relates to a high-efficiency multi-energy layer ion source implanter. Background Art

[0002] The electrical properties of semiconductor devices depend on the impurity concentration doped in the semiconductor. In the process of manufacturing semiconductor wafers, to turn pure silicon with very poor conductivity into a useful semiconductor, a small amount of impurities need to be added to change its structure and conductivity. This process is called doping. Currently, there are two doping processes: high-temperature thermal diffusion method and ion implantation method, and ion implantation occupies the mainstream position.

[0003] A multi-energy layer ion source implanter is an ion implantation device, which is characterized by being able to change the energy of ions during the same implantation process, so as to form a multi-level ion depth distribution. This technology is commonly used in the semiconductor manufacturing industry to achieve precise ion implantation of semiconductor devices and change the electrical properties of electronic devices.

[0004] During the process of implanting ions into the wafer, the wafer is usually pasted on the surface of the target disk, and the wafer is driven to move by moving the target disk. This method is very troublesome for replacing the wafer, with a long replacement time, resulting in a long waiting time for the equipment and low efficiency. Summary of the Utility Model

[0005] In order to solve the problems in the above background art, the utility model provides a high-efficiency multi-energy layer ion source implanter, aiming to accelerate the wafer replacement rate, reduce the equipment waiting time, and improve the production efficiency.

[0006] The solution adopted by the utility model to solve its technical problems is: a high-efficiency multi-energy layer ion source implanter, including:

[0007] An ion beam current system, the ion beam current system includes a gas box, an ion source, a mass analyzer and an acceleration tube connected in sequence. The gas box and the ion source generate an ion beam, and after the impurity ions are screened out by the mass analyzer, they are accelerated and emitted by the acceleration tube;

[0008] A target stage, a receiving part is provided on the target stage, the receiving part is aligned with the outlet of the acceleration tube, a plurality of locking parts are circumferentially arranged on the edge of the receiving part, an adjustment space is opened inside the target stage, an adjustment rod is inserted into the adjustment space, and rotating the adjustment rod can press the locking part to move to loosen / lock it.

[0009] In an embodiment of the utility model, a plurality of installation grooves are circumferentially arranged on the edge of the receiving part, the locking parts are movably arranged in the installation grooves, and a spring is arranged between the locking parts and the inner wall of the installation grooves.

[0010] In an embodiment of the present utility model, the locking member includes an adjusting section and a locking section. The adjusting section is located within the adjusting space, and the locking section extends to the edge of the accommodating portion.

[0011] In an embodiment of the present utility model, a limiting strip is provided at the top end of the locking section.

[0012] In an embodiment of the present utility model, one end of the adjusting rod has a cam. The cam is located inside the adjusting space and abuts against the adjusting section. Rotate the adjusting rod to press the locking member to move.

[0013] In an embodiment of the present utility model, a rotating handle is provided at the free end of the adjusting rod.

[0014] In summary, the beneficial effects of the present utility model are as follows: The technical solution of the present utility model provides a locking member for fixing a wafer on a target table, and an adjusting rod is provided inside the target table. By rotating the adjusting rod to press the locking member to move, the locking member can be loosened or locked, enabling the wafer to be replaced more conveniently and quickly, reducing the waiting time of the equipment, and improving production efficiency.

[0015] The above description is only an overview of the technical solution of the present utility model. In order to better understand the technical means of the present utility model, it can be implemented according to the content of the specification. In order to make the above and other purposes, features, and advantages of the present utility model more obvious and understandable, the following preferred embodiments are specifically given and described in detail in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a schematic structural diagram of this embodiment;

[0017] Figure 2 is a schematic diagram of the target table of this embodiment;

[0018] Figure 3 is a cross-sectional view of the target table of this embodiment;

[0019] Figure 4 is a schematic diagram of the adjusting rod of this embodiment;

[0020] Figure 5 is a schematic diagram of the locking member of this embodiment;

[0021] Figure 6 is a schematic diagram of the fitting state of the adjusting rod and the locking member of this embodiment.

[0022] In the figure: 1. Ion beam current system; 11. Gas box; 12. Ion source; 13. Mass analyzer; 14. Accelerating tube; 2. Target stage; 21. Accommodating part; 22. Installation groove; 23. Spring; 24. Adjusting space; 3. Locking member; 31. Adjusting section; 32. Locking section; 33. Limit strip; 4. Adjusting rod; 41. Cam; 42. Rotating handle. Detailed implementation manners

[0023] In order to make the content of the present utility model easier to be clearly understood, the present utility model will be further described below according to specific embodiments in conjunction with the accompanying drawings.

[0024] It should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", "inner", "outer", etc. used in this article is based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present utility model. Unless otherwise specified, the meaning of "a plurality" is two or more.

[0025] Unless otherwise clearly defined and limited, the terms "installation", "connection", and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood through specific situations.

[0026] As Figures 1 to 6 shown, the present utility model provides a high-efficiency multi-energy layer ion source injector, which includes an ion beam current system 1 and a target stage 2. The ion beam current system 1 includes a gas box 11, an ion source 12, a mass analyzer 13, and an accelerating tube 14 that are connected in sequence. The gas box 11 and the ion source 12 generate an ion beam. After the impurity ions are screened out by the mass analyzer 13, they are accelerated and ejected by the accelerating tube 14. The target stage 2 is provided with an accommodating part 21. The accommodating part 21 is aligned with the outlet of the accelerating tube 14. A plurality of locking members 3 are circumferentially arranged on the edge of the accommodating part 21. An adjusting space 24 is opened inside the target stage 2. An adjusting rod 4 is inserted into the adjusting space 24. Rotating the adjusting rod 4 can press the locking member 3 to move so as to loosen / lock it.

[0027] Understandably, the ion beam system 1 is a prior art and is only briefly introduced here. The gas box 11 is used to provide the gas to be ionized for the ion source 12. The thermoelectrons generated in the ion source 12 bombard gas molecules under the action of an electric field to ionize them. All the positively charged ions are repelled by the positive pressure of the anode of the ion source 12 and are drawn out from a slit. At this time, the electrons in the plasma are repelled by the cathode and are blocked, thus forming an ion beam composed of positive ions. The bombardment of impurity source gas molecules by thermoelectrons will generate various ions, and the mass-to-charge ratio of each ion is different. When passing through the mass analyzer 13, under the action of magnetic force, the movement trajectories of the ions will be different, and the required impurity ions can be separated from the mixed ion beam. In order to enable the ions to obtain greater energy to meet the implantation requirements, the positive ions still need to obtain the required speed through the high voltage of the acceleration tube 14 after coming out of the mass analyzer 13. The acceleration tube 14 is composed of a series of electrodes isolated by a medium, and the negative voltages on the electrodes increase sequentially. When the positive ions enter the acceleration tube 14, each negative electrode accelerates the ions step by step. The higher the total voltage, the faster the movement speed of the ions, that is, the greater the kinetic energy.

[0028] The target stage 2 is used to place the wafer to be doped. A receiving portion 21 is provided on the target stage 2. The size of the receiving portion 21 matches the size of the wafer. The wafer is placed in the receiving portion 21, and the receiving portion 21 is aligned with the outlet of the acceleration tube 14 so that the ion beam ejected from the acceleration tube 14 can be implanted into the wafer. The target stage 2 can also be externally connected to a servo motor to facilitate lifting, rotation and other movements. A plurality of locking members 3 are provided at the edge of the receiving portion 21. The locking members 3 can abut against the edge of the wafer placed in the receiving portion 21 to fix the wafer. Inside the target stage 2, there is an adjustment space 24 below the receiving portion 21. A part of the locking member 3 extends into the adjustment space 24. At the same time, an adjustment rod 4 is inserted into the adjustment space 24. The insertion end of the adjustment rod 4 has a cam 41. The cam 41 can fit with the part of the locking member 3 extending into the adjustment space 24. When the adjustment rod 4 is rotated, the edge of the cam 41 will press the locking member 3 to push the locking member 3 so that it no longer abuts against the edge of the wafer. At this time, the wafer can be replaced. Continuing to rotate the adjustment rod 4, the edge of the cam 41 no longer presses the locking member 3, and the locking member 3 abuts against the edge of the wafer again to fix the wafer. This fixing method is undoubtedly more convenient, time-saving and labor-saving compared with the traditional glue bonding fixing method, greatly reducing the equipment waiting time and improving the production efficiency.

[0029] As Figures 2 to 3 shown, in an embodiment of the present application, a plurality of installation grooves 22 are circumferentially provided at the edge of the receiving portion 21. The locking members 3 are movably arranged in the installation grooves 22, and a spring 23 is arranged between the locking members 3 and the inner wall of the installation grooves 22.

[0030] Understandably, the installation groove 22 is used to install the locking member 3, and the locking member 3 can slide to a certain extent within the installation groove 22. The spring 23 between the locking member 3 and the installation groove 22 is used to provide a thrust to the locking member 3 so that it can press against the edge of the wafer. When the adjusting rod 4 is rotated, the cam 41 presses the locking member 3, causing it to slide along the installation groove 22, and the spring 23 is compressed. At this time, the wafer can be replaced. After the replacement is completed, continue to rotate the adjusting rod 4, the cam 41 no longer presses the locking member 3, the spring 23 rebounds, and the locking member 3 presses against the wafer again to complete the fixation.

[0031] As Figure 3 shown in Figure 5 In an embodiment of the present application, the locking member 3 includes an adjusting section 31 and a locking section 32. The adjusting section 31 is located within the adjusting space 24, and the locking section 32 extends to the edge of the accommodating portion 21.

[0032] Understandably, the locking member 3 has a segmented structure. The adjusting section 31 is located within the adjusting space 24 and fits against the cam 41 of the adjusting rod 4. The locking section 32 extends upward all the way to the edge of the accommodating portion 21. When the adjusting section 31 fits against the cam 41, the locking section 32 also presses against the edge of the wafer. The locking section 32 has a certain bending arc so that it can completely fit against the edge of the wafer to achieve a better wafer fixation effect. When the cam 41 presses the adjusting section 31, the adjusting section 31 drives the locking section 32 to move, and the locking section 32 no longer fits against the wafer. At this time, the wafer can be replaced.

[0033] As Figure 5 shown in

[0034] Understandably, through the above setting, the limiting strip 33 can wrap part of the edge of the wafer when the locking member 3 presses against the wafer, reducing the risk of the wafer detaching from the accommodating portion 21, making the fixation effect of the locking member 3 on the wafer better, and also making the ion implantation process more stable.

[0035] As Figures 3 to 6 shown in

[0036] Understandably, one end of the adjusting rod 4 is inserted into the adjusting space 24, and the other end remains outside the target table 2 for facilitating the rotation of the adjusting rod 4 through this end. One end inserted into the adjusting space 24 is provided with a cam 41. The cam 41 has four side surfaces, and the adjusting section 31 of the locking member 3 is attached to these four side surfaces. When the adjusting rod 4 is rotated, the edge of the cam 41 will press the adjusting section 31, driving the locking section 32 to move so that it no longer presses against the edge of the wafer. At this time, the wafer can be replaced. Continuing to rotate the adjusting rod 4, the edge of the cam 41 no longer presses the adjusting section 31, and the locking section 32 presses against the edge of the wafer again to fix the wafer.

[0037] As Figures 3 to 6 shown, in an embodiment of the present application, a rotating handle 42 is provided at the free end of the adjusting rod 4.

[0038] Understandably, the rotating handle 42 is provided to facilitate the rotation of the adjusting rod 4, making the rotation process more labor-saving and convenient for controlling the loosening or locking of the locking member 3.

[0039] In summary, the beneficial effects of this embodiment are as follows: In this embodiment, a locking member 3 for fixing the wafer is provided on the target table 2, and an adjusting rod 4 is provided inside the target table 2. By rotating the adjusting rod 4 to press the locking member 3 to move, the loosening or locking of the locking member 3 is achieved, enabling the wafer to be replaced more conveniently and quickly, reducing the waiting time of the equipment, and improving the production efficiency.

[0040] The above-described embodiments are only the preferred embodiments of the present invention and cannot be used to limit the protection scope of the present invention. Any non-substantive changes and modifications made by those skilled in the art based on the present invention shall fall within the protection scope of the present invention.

Claims

1. A high-efficiency multi-energy-layer ion source implanter, characterized in that, Comprising An ion beam system (1), the ion beam system (1) comprising a gas box (11), an ion source (12), a mass analyzer (13), and an acceleration tube (14) connected in sequence. The gas box (11) and the ion source (12) generate an ion beam, which is screened for impurity ions by the mass analyzer (13) and then accelerated and emitted by the acceleration tube (14). A target stage (2), on which a receiving portion (21) is provided. The receiving portion (21) is aligned with the outlet of the acceleration tube (14). A plurality of locking members (3) are circumferentially arranged at the edge of the receiving portion (21). An adjustment space (24) is formed inside the target stage (2), and an adjustment rod (4) is inserted into the adjustment space (24). Rotating the adjustment rod (4) can press the locking members (3) to move so as to loosen / lock them.

2. The high-efficiency multi-energy-layer ion source implanter according to claim 1, wherein A plurality of installation grooves (22) are circumferentially arranged at the edge of the receiving portion (21), the locking members (3) are movably arranged in the installation grooves (22), and a spring (23) is arranged between the locking members (3) and the inner wall of the installation grooves (22).

3. The high-efficiency multi-energy layer ion source implanter according to claim 2, characterized in that, The locking member (3) comprises an adjustment section (31) and a locking section (32), the adjustment section (31) is located in the adjustment space (24), and the locking section (32) extends to the edge of the receiving portion (21).

4. The high-efficiency multi-energy-layer ion source implanter according to claim 3, characterized in that, A limiting strip (33) is arranged at the top end of the locking section (32).

5. The high-efficiency multi-energy layer ion source implanter according to claim 4, wherein, One end of the adjustment rod (4) has a cam (41), the cam (41) is located inside the adjustment space (24) and abuts against the adjustment section (31), and rotating the adjustment rod (4) causes the cam (41) to press the locking member (3) to move.

6. The high-efficiency multi-energy-layer ion source implanter according to claim 5, wherein, A rotating handle (42) is arranged at the free end of the adjustment rod (4).

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