Low-bias multiband semiconductor optical amplifier device

Abstract

The utility model provides a low-bias multiband semiconductor optical amplifier device, comprising a seed source chip SLD used for providing a first light source; the first excitation chip SOA is used for performing gain amplification on an input optical signal; wherein a first light source output by the seed source chip SLD is transmitted to the first excitation chip SOA, gain amplification is carried out on the first light source through the first excitation chip SOA, and a first gain light source is output; other wavebands output gain light sources in the same form; and finally, combining the multi-band gain light sources and then outputting an integrated gain light source. According to the technical scheme, the technical problems that an existing semiconductor optical amplifier device is unique in wave band and poor in flatness can be solved.

Description

Technical Field

[0001] The utility model relates to the technical field of optical fiber communication, in particular to a low-bias multi-band semiconductor optical amplifier device. Background Art

[0002] In the prior art, the optical power output by the semiconductor optical amplifier device is relatively low, and generally an external light source needs to be connected to achieve a higher optical power output. The prior art with the application number 202320405634.X points out that the semiconductor optical amplifier device includes a seed source chip for at least providing a first light source and a first excitation chip for gain-amplifying the input optical signal; wherein, when the first light source output by the seed source chip is transmitted to the first excitation chip, the first excitation chip performs gain amplification on the first light source to form a first gain light source and then outputs it. The setting of the first excitation chip enhances the optical power output by the semiconductor optical amplifier device, and at the same time, the semiconductor optical amplifier device can achieve a light source with a higher output optical power without an external light source. Although the optical power output by this semiconductor optical amplifier device is only improved, it cannot meet the requirements of multi-band and flatness. Summary of the Utility Model

[0003] In view of this, the purpose of the utility model is to provide a low-bias multi-band semiconductor optical amplifier device to solve the technical problems of the prior semiconductor optical amplifier device having a single band and poor flatness.

[0004] To achieve the above purpose, the utility model adopts the following technical scheme: A low-bias multi-band semiconductor optical amplifier device, comprising: a seed source chip SLD for providing a first light source; a first excitation chip SOA for gain-amplifying the input optical signal; wherein, the first light source output by the seed source chip SLD is transmitted to the first excitation chip SOA, and after being gain-amplified by the first excitation chip SOA, a first gain light source is output; other bands output gain light sources in the same form; finally, the gain light sources of multiple bands are multiplexed and then an integrated gain light source is output.

[0005] In a preferred embodiment, it includes a forming component group of a first gain light source; the forming component group of the first gain light source sequentially includes a first light source SLD (1), a first lens (2), a first filter (3), a second lens (4), a first pumping chip SOA (5), a third lens (6), and a quarter-wave plate (8); wherein, the first light source SLD (1) is used to provide a first light source; the first pumping chip SOA (5) is used to perform gain amplification on the input optical signal to form a first gain light source; the first lens (2) and the second lens (4) form a lens group for collimation and focusing, the first filter (3) is used for filtering, the third lens (6) is used for collimating the gain light source, and the quarter-wave plate (8) is used to change the polarization of light and convert linearly polarized light into circularly polarized light to achieve the purpose of a small polarization extinction ratio. This is the process of forming the first gain light source Ⅰ, which is for one wavelength band.

[0006] In a preferred embodiment, it includes a forming component group of a second gain light source; the forming component group of the second gain light source sequentially includes a second light source SLD (16), a fourth lens (17), a second filter (18), a fifth lens (19), a second pumping chip SOA (20), a sixth lens (21), a mirror (22), and a polarization beam splitter (7); wherein the second light source SLD (16) is used to provide a second light source; the second pumping chip SOA (20) is used to perform gain amplification on the input optical signal to form a second gain light source Ⅱ; the fourth lens (17) and the fifth lens (19) form a lens group for collimation and focusing, the second filter (18) is used for filtering, the fifth lens (19) is used for collimating the gain light source Ⅱ, and the collimated gain light source Ⅱ is reflected by the mirror (22) and undergoes polarization multiplexing through the polarization beam splitter (7) to be combined with the first gain light source Ⅰ into a dual-wavelength band light source.

[0007] In a preferred embodiment, it includes a forming component group of a third gain light source; the forming component group of the third gain light source sequentially includes a third light source SLD (9), a seventh lens (10), a third filter (11), an eighth lens (12), a third pumping chip SOA (13), a ninth lens (14), and a wavelength division multiplexing combiner (15); wherein the third light source SLD (9) is used to provide a third light source; the third pumping chip SOA (13) is used to perform gain amplification on the input optical signal to form a third gain light source Ⅲ; the seventh lens (10) and the eighth lens (12) form a lens group for collimation and focusing, the third filter (11) is used for filtering, the ninth lens (14) is used for collimating the gain light source Ⅲ, and the collimated gain light source Ⅲ is combined with the second gain light source Ⅱ through the wavelength division multiplexing combiner (15) to form a dual-wavelength band light source containing the third gain light source Ⅲ and the second gain light source Ⅱ. This light source undergoes polarization multiplexing through the polarization beam splitter (7) and is combined with the first gain light source Ⅰ into a triple-wavelength band light source.

[0008] Compared with the prior art, the present invention has the following beneficial effects:

[0009] 1. Multi-band combining mode (polarization combining and WDM combining);

[0010] 2. Convert linear polarization to circular polarization to reduce polarization degree;

[0011] 3. Use GFF filtering to achieve flatness requirements;

[0012] 4. Polarization combining (or WDM combining) is used to combine light of different wavelength bands into one beam;

[0013] 5. Add a GFF filter between the seed source and the gain light source to achieve flatness requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a structural exploded view of a preferred embodiment of the present utility model;

[0015] Figure 2 It is a plan view of a preferred embodiment of the utility model. DETAILED DESCRIPTION

[0016] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0017] It should be noted that the following detailed descriptions are illustrative and intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which the present application belongs.

[0018] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application; as used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form, and it should be understood that when the terms "comprise" and / or "include" are used in this specification, they indicate the presence of features, steps, operations, devices, components and / or their combinations.

[0019] refer to Figure 1-2 A low-bias multi-band semiconductor optical amplifier device comprises: a seed source chip (SLD) for providing a first light source; and a first excitation chip (SOA) for performing gain amplification on the input optical signal. The first light source output by the seed source chip is transmitted to the first excitation chip, where it undergoes gain amplification and outputs a first gain light source. If additional bands are present, the gain light sources are output in the same manner. Finally, the multi-band gain light sources are combined to output an integrated gain light source.

[0020] Specifically, the semiconductor optical amplifier device includes a first light source SLD1, a first lens 2, a first filter 3, a second lens 4, a first pumping chip SOA5, a third lens 6, and a quarter-wave plate 8. The first light source SLD1 is used to provide a first light source; the first pumping chip SOA5 is used to amplify the input optical signal to form a first gain light source; the first lens 2 and the second lens 4 form a lens group for collimation and focusing, the first filter 3 is used for filtering, the third lens 6 is used for collimating the gain light source, and the quarter-wave plate 8 is used to change the polarization of light, converting linearly polarized light into circularly polarized light to achieve a small polarization extinction ratio. This is the process of forming the first gain light source I, which can be for one wavelength band.

[0021] Specifically, the semiconductor optical amplifier device further includes a second light source SLD16, a fourth lens 17, a second filter 18, a fifth lens 19, a second pumping chip SOA20, a sixth lens 21, a mirror 22, and a polarization beam splitter 7. The second light source SLD16 is used to provide a second light source; the second pumping chip SOA20 is used to amplify the input optical signal to form a second gain light source II; the fourth lens 17 and the fifth lens 19 form a lens group for collimation and focusing, the second filter 18 is used for filtering, the fifth lens 19 is used for collimating the gain light source II, and the collimated gain light source II is reflected by the mirror 22 and polarization multiplexed with the first gain light source I through the polarization beam splitter 7 to form a two-wavelength-band light source.

[0022] Specifically, the semiconductor optical amplifier device further includes a third light source SLD9, a seventh lens 10, a third filter 11, an eighth lens 12, a third pumping chip SOA13, a ninth lens 14, and a wavelength division multiplexing coupler 15. The third light source SLD9 is used to provide a third light source; the third pumping chip SOA13 is used to amplify the input optical signal to form a third gain light source III; the seventh lens 10 and the eighth lens 12 form a lens group for collimation and focusing, the third filter 11 is used for filtering, the ninth lens 14 is used for collimating the gain light source III, and the collimated gain light source III is multiplexed with the second gain light source II through the wavelength division multiplexing coupler 15 to form a two-wavelength-band light source containing the third gain light source III and the second gain light source II. This light source is polarization multiplexed with the first gain light source I through the polarization beam splitter 7 to form a three-wavelength-band light source.

[0023] In more embodiments, more gain light sources can be added according to the way of increasing the third gain light source.

Claims

1. A low-bias multi-band semiconductor optical amplifier device, characterized in that, Comprising: A seed source chip SLD for providing a first light source; A first pumping chip SOA for gain amplification of an input optical signal; wherein, the first light source output by the seed source chip SLD is transmitted to the first pumping chip SOA, and after being subjected to gain amplification by the first pumping chip SOA, a first gain light source is output; gain light sources of other wavelength bands are output in the same form; finally, the gain light sources of multiple wavelength bands are multiplexed and then an integrated gain light source is output.

2. The low-bias multi-band semiconductor optical amplifier device according to claim 1, wherein A forming component group of the first gain light source; the forming component group of the first gain light source sequentially includes a first light source SLD (1), a first lens (2), a first filter (3), a second lens (4), a first pumping chip SOA (5), a third lens (6), a quarter-wave plate (8); wherein, the first light source SLD (1) is used to provide a first light source; the first pumping chip SOA (5) is used to perform gain amplification on an input optical signal to form a first gain light source; the first lens (2) and the second lens (4) form a lens group for collimation and focusing, the first filter (3) is used for filtering, the third lens (6) is used for collimating the gain light source, and the quarter-wave plate (8) is used to change the polarization of light and convert linearly polarized light into circularly polarized light to achieve the purpose of a small polarization extinction ratio. This is the process of forming the first gain light source Ⅰ, which is one wavelength band.

3. The low polarization multi-wavelength band semiconductor optical amplifier device according to claim 2, wherein, A forming component group of the second gain light source; the forming component group of the second gain light source sequentially includes a second light source SLD (16), a fourth lens (17), a second filter (18), a fifth lens (19), a second pumping chip SOA (20), a sixth lens (21), a mirror (22), a polarization beam splitter (7); wherein the second light source SLD (16) is used to provide a second light source; the second pumping chip SOA (20) is used to perform gain amplification on an input optical signal to form a second gain light source Ⅱ; the fourth lens (17) and the fifth lens (19) form a lens group for collimation and focusing, the second filter (18) is used for filtering, the fifth lens (19) is used for collimating the gain light source Ⅱ, the collimated gain light source Ⅱ is reflected by the mirror (22), and the polarization beam splitter (7) performs polarization multiplexing to combine with the first gain light source Ⅰ into a two-wavelength band light source.

4. The low-bias multi-band semiconductor optical amplifier device according to claim 3, wherein A forming component group including a third gain light source; the forming component group of the third gain light source sequentially includes a third light source SLD (9), a seventh lens (10), a third filter (11), an eighth lens (12), a third pumping chip SOA (13), a ninth lens (14), and a wavelength division multiplexing combiner (15); wherein the third light source SLD (9) is used to provide a third light source; the third pumping chip SOA (13) is used to amplify the input optical signal to form a third gain light source III; the seventh lens (10) and the eighth lens (12) form a lens group for collimation and focusing, the third filter (11) is used for filtering, the ninth lens (14) is used to collimate the gain light source III, and the collimated gain light source III is combined with the second gain light source II through the wavelength division multiplexing combiner (15) to form a dual-band light source including the third gain light source III and the second gain light source II. This light source is polarization combined with the first gain light source I through a polarization beam splitter (7) to form a three-band light source in a beam.

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