LPCVD (Low Pressure Chemical Vapor Deposition) equipment and solar cell production system
By bringing water molecules into the reactor after contacting oxygen with water in the LPCVD equipment, combined with temperature control and pressure control, the problem of long formation time and uneven thickness of the silicon oxide layer is solved, and faster oxidation rate and more uniform oxide layer are achieved, which improves production efficiency and product quality.
Patent Information
- Application Number
- CN202422443498.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-09
- Publication Date
- 2025-08-01
- Estimated Expiration
- 2034-10-09
AI Technical Summary
When preparing the silicon oxide layer, the existing LPCVD technology has a low reaction rate, resulting in a long formation time of the oxide layer, low production efficiency and uneven thickness, affecting chip performance and reliability.
The first oxygen source, water storage tank and reactor are connected through pipelines, so that oxygen can contact water and carry water molecules into the reactor after contacting water, and use water molecules to promote the oxidation reaction, and combine the temperature control device, nitrogen source, pressure controller and hydrogen oxygen source design to optimize the oxidation process.
It significantly improves the oxidation reaction rate, shortens the process time, improves production efficiency, and makes the thickness of the oxide layer more uniform, improving equipment output and product quality.
Smart Images
Figure CN223176196U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of photovoltaic manufacturing, and particularly relates to an LPCVD device and a solar cell production system. Background Art
[0002] Currently, when using LPCVD (Low Pressure Chemical Vapor Deposition) technology to prepare a silicon oxide layer (SiO), pure oxygen is usually used as the reaction gas. Although this method has a certain degree of controllability and maturity, there are some significant disadvantages and limitations in practical applications.
[0003] The formation of the silicon oxide layer is a chemical reaction process, and oxygen molecules need to directly interact with the silicon surface to form SiO. During the LPCVD process using pure oxygen, the reaction rate between oxygen and the silicon surface is relatively low, resulting in a limited growth rate of the oxide layer. Thus, the formation process of the oxide layer is prolonged in terms of process time, which is not conducive to large-scale manufacturing and improving production efficiency. At the same time, due to the slow reaction rate, the distribution and uniformity of the gas have a significant impact on the quality of the oxide layer. If the distribution of oxygen in the reaction furnace is uneven, it may lead to uneven thickness of the oxide layer, thereby affecting the performance and reliability of the chip. Summary of the Utility Model
[0004] The utility model provides an LPCVD device, aiming to solve the problems of long formation time of the silicon oxide layer, resulting in slow production speed and easy uneven thickness of the oxide layer.
[0005] The utility model is realized as follows. An LPCVD device includes: a reaction furnace, a water storage tank, and a first oxygen source;
[0006] The water storage tank is filled with water, and the water storage tank is connected to the first oxygen source through a first pipeline;
[0007] The reaction furnace is used to complete the reaction, and the reaction furnace is connected to the water storage tank through a second pipeline.
[0008] Optionally, one end of the first pipeline connected to the water storage tank is placed below the liquid level of the water storage tank, and one end of the second pipeline connected to the water storage tank is placed above the liquid level of the water storage tank.
[0009] Optionally, it further includes a temperature control device, and the temperature control device is used to control the temperature of the water stored in the water storage tank.
[0010] Optionally, the temperature control device is a temperature control bucket, and the water storage tank is placed inside the temperature control bucket.
[0011] Optionally, it further includes a nitrogen source, and the nitrogen source is connected to the first pipeline.
[0012] Optionally, it further includes a pressure controller for controlling the total gas pressure in the water storage tank.
[0013] Optionally, the pressure controlled by the pressure controller is 0.1 - 1 atm.
[0014] Optionally, a water replenishing port is provided on the water storage tank.
[0015] Optionally, the second pipeline includes a first branch and a second branch. The first branch communicates with the furnace mouth of the reaction furnace, and the second branch communicates with the furnace tail of the reaction furnace.
[0016] Optionally, it further includes a second oxygen source, and the second oxygen source is connected to the reaction furnace through a third pipeline.
[0017] Optionally, the third pipeline includes a third branch and a fourth branch. The third branch communicates with the furnace mouth of the reaction furnace, and the fourth branch communicates with the furnace tail of the reaction furnace.
[0018] The present utility model further provides a solar cell production system, including the above-mentioned LPCVD equipment.
[0019] The beneficial effects achieved by the present utility model are as follows. Since the pipelines are sequentially connected to the first oxygen source, the water storage tank, and the reaction furnace, the oxygen provided by the first oxygen source contacts with water, and the oxygen carrying water molecules is introduced into the reaction furnace to participate in the reaction. The water molecules promote the oxidation process, significantly increasing the oxidation reaction rate in the reaction furnace. A faster oxidation rate means that the process can be completed faster, improving the overall output of the equipment, and at the same time making the thickness of the oxide layer more uniform. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 is a schematic structural diagram of the first LPCVD equipment provided by the present utility model;
[0021] Figure 2 is a schematic structural diagram of the second LPCVD equipment provided by the present utility model;
[0022] Figure 3 is a schematic structural diagram of the third LPCVD equipment provided by the present utility model;
[0023] Figure 4 is a schematic cross-sectional view of the water storage tank provided by the present utility model;
[0024] Figure 5 is a schematic structural diagram of the fourth LPCVD equipment provided by the present utility model;
[0025] Figure 6It is a schematic structural diagram of the fifth LPCVD device provided by the present utility model;
[0026] Figure 7 It is a schematic structural diagram of the sixth LPCVD device provided by the present utility model.
[0027] Description of reference numerals:
[0028] 100, LPCVD device; 110, reaction furnace; 120, water storage tank; 130, first oxygen source; 140, first pipeline; 150, second pipeline; 151, first branch; 152, second branch; 160, temperature control device; 170, nitrogen source; 180, pressure controller; 190, second oxygen source; 191, third pipeline; 192, fourth branch; 193, third branch. Detailed implementation manners
[0029] In order to make the objectives, technical solutions and advantages of the present utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. Examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions from beginning to end. The embodiments described below by referring to the accompanying drawings are exemplary and are only used to explain the present utility model and should not be construed as a limitation to the present utility model. In addition, it should be understood that the specific embodiments described herein are only used to explain the present utility model and are not used to limit the present utility model.
[0030] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by terms such as "length", "width", "upper", "lower", "left", "right", "horizontal", "top", "bottom", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present utility model.
[0031] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the described features. In the description of the present utility model, "a plurality" means two or more, unless otherwise specifically defined.
[0032] In the description of the present utility model, it should be noted that unless otherwise clearly specified and defined, the terms "installation", "connection", and "coupling" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection, an electrical connection, or a connection that allows mutual communication; it may be a direct connection, or an indirect connection through an intermediate medium, and it may be the internal communication of two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.
[0033] In the present utility model, unless otherwise clearly specified and defined, the first feature being "above" or "below" the second feature may include the direct contact of the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through other features therebetween. Moreover, the first feature being "above", "over", and "on top of" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the horizontal height of the first feature is higher than that of the second feature. The first feature being "below", "beneath", and "underneath" the second feature includes the first feature being directly below and obliquely below the second feature, or merely indicating that the horizontal height of the first feature is lower than that of the second feature.
[0034] The following disclosure provides many different embodiments or examples for implementing different structures of the present utility model. To simplify the disclosure of the present utility model, the components and settings of specific examples are described below. Of course, they are merely examples and are not intended to limit the present utility model. In addition, the present utility model may repeat reference numerals and / or reference letters in different examples. This repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present utility model provides examples of various specific processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.
[0035] The present utility model connects a first oxygen source, a water storage tank, and a reaction furnace in sequence through pipelines, so that the oxygen provided by the first oxygen source contacts water, and the oxygen carrying water molecules is introduced into the reaction furnace to participate in the reaction. The water molecules promote the oxidation process, significantly increasing the oxidation reaction rate in the reaction furnace. A faster oxidation rate means that the process can be completed more quickly, improving the overall output of the equipment, and at the same time making the thickness of the oxide layer more uniform.
[0036] Example 1
[0037] As Figure 1 shown, this embodiment provides an LPCVD device 100, including: a reaction furnace 110, a water storage tank 120, and a first oxygen source 130;
[0038] The water storage tank 120 is filled with water, and the water storage tank 120 is connected to the first oxygen source 130 through the first pipeline 140;
[0039] The reaction furnace 110 is used to complete the reaction, and the reaction furnace 110 is connected to the water storage tank 120 through the second pipeline 150.
[0040] LPCVD is the abbreviation of Low Pressure Chemical Vapor Deposition, which means low-pressure chemical vapor deposition in Chinese and is widely used in the deposition of silicon oxide, nitride, and polysilicon. The reaction furnace 110 is a key device for performing the LPCVD process, providing a place for the oxidation reaction, mainly used for depositing thin films or completing the oxidation reaction.
[0041] The first oxygen source 130 is used to provide oxygen, which can specifically be an oxygen tank, an oxygen generator, or other oxygen production equipment. The water storage tank 120 is a closed container for storing water. The water storage tank 120 is connected to the first oxygen source 130 and the reaction furnace 110 through the first pipeline 140 and the second pipeline 150 respectively. The first oxygen source 130 enters the water storage tank 120 through the first pipeline 140. When the oxygen passes through the water storage tank 120, it contacts the water therein, causing the oxygen to carry water molecules. Then, the oxygen carrying water molecules enters the reaction furnace 110 through the second pipeline 150. Inside the reaction furnace 110, the oxygen carrying water molecules participates in the oxidation reaction. The addition of water molecules can greatly improve the oxidation rate. Usually, the wet oxygen oxidation rate in a water-containing atmosphere can be 3 to 10 times that of the dry oxygen oxidation rate in a water-free atmosphere.
[0042] In this application, the first oxygen source 130, the water storage tank 120, and the reaction furnace 110 are connected in sequence through pipelines, so that the oxygen provided by the first oxygen source 130 contacts the water, and the oxygen carrying water molecules is introduced into the reaction furnace 110 to participate in the reaction. The water molecules promote the oxidation process, significantly increasing the oxidation reaction rate in the reaction furnace 110. A faster oxidation rate means that the process can be completed faster, improving the overall output of the equipment, and at the same time making the thickness of the oxide layer more uniform.
[0043] Example 2
[0044] As Figure 4 shown, on the basis of Embodiment 1, the end of the first pipeline 140 connected to the water storage tank 120 is placed below the liquid level of the water storage tank 120, and the end of the second pipeline 150 connected to the water storage tank 120 is placed above the liquid level of the water storage tank 120.
[0045] When the first oxygen source 130 enters the water storage tank 120 through the first pipeline 140, since the outlet of the first pipeline 140 is below the liquid level, oxygen will pass through the water in the form of bubbles, so that oxygen can come into full contact with the water and adsorb more water molecules, ensuring that the oxygen carries sufficient moisture.
[0046] Since the second pipeline 150 is above the liquid level, only when oxygen precipitates from the water and rises to the liquid level with water molecules can it enter the reaction furnace 110 through the second pipeline 150. In this way, the air flow entering the reaction furnace 110 is fully humidified oxygen, ensuring the quality and stability of the humid oxygen flow during the reaction process.
[0047] Example 3
[0048] As Figure 2 and 3 shown, on the basis of the first embodiment, a temperature control device 160 is further included, and the temperature control device 160 is used to control the temperature of the water stored in the water storage tank 120.
[0049] The temperature control device 160 can precisely adjust the water temperature in the water storage tank 120. The level of the water temperature directly affects the evaporation rate of water molecules, thereby adjusting the water content in the humid oxygen flow entering the reaction furnace 110. By controlling the water temperature, the humidity of the humid oxygen flow can be more precisely controlled, and thus the rate of wet oxygen oxidation can be optimized.
[0050] Specifically, the temperature control device 160 can be arranged inside the water storage tank 120 to directly control the temperature of the water stored in the water storage tank 120, or it can be arranged outside the water storage tank 120 to indirectly control the water temperature in the water storage tank 120 by controlling the temperature of the tank body of the water storage tank 120.
[0051] Example 4
[0052] As Figure 2 and 3 shown, on the basis of the third embodiment, the temperature control device 160 is a temperature control bucket, and the water storage tank 120 is placed inside the temperature control bucket.
[0053] The temperature control bucket is an independent structure for surrounding the water storage tank 120. The temperature control bucket usually has a temperature regulation system inside, which can precisely control the temperature inside the bucket, thereby indirectly regulating the temperature of the water in the water storage tank 120.
[0054] Compared with directly heating or cooling the water storage tank 120, indirect temperature control through the temperature control bucket can provide more uniform and stable temperature regulation, avoiding problems such as excessive temperature fluctuations or uneven heating.
[0055] In one embodiment, the temperature controlled by the temperature control device 160 is 30 - 90 °C.
[0056] The temperature controlled by the temperature control device 160 is from 30°C to 90°C, that is, the water temperature in the water storage tank 120 is controlled within the range of 30°C to 90°C. Within this temperature range, a certain humidity can be retained, and the influence of excessive temperature on some sensitive reactants can be avoided, providing the most suitable reaction conditions.
[0057] Example 5
[0058] As Figure 2 and 3 shown, on the basis of the first embodiment, it further includes a nitrogen source 170, and the nitrogen source 170 is communicated with the first pipeline 140.
[0059] During the wet oxidation process, oxygen is required to carry a certain amount of moisture to improve the reaction efficiency and quality. Since the amount of oxygen is fixed, the moisture it carries may be insufficient. In this case, introducing nitrogen can be used as an auxiliary gas. Nitrogen does not participate in the chemical reaction, but can carry more moisture through the water body in the temperature control device 160 to supplement the problem of insufficient moisture carried by oxygen. By adjusting the flow rate of nitrogen, the total moisture content entering the reaction furnace 110 can be controlled, so that the humidity of the wet oxygen stream can be flexibly adjusted when the amount of oxygen is fixed.
[0060] Example 6
[0061] As Figure 2 and 3 shown, on the basis of the first embodiment, it further includes a pressure controller 180, and the pressure controller 180 is used to control the total gas pressure in the water storage tank 120.
[0062] After the wet oxygen stream is mixed with the water storage tank 120 and the nitrogen source 170, it enters the reaction furnace 110 through the second pipeline 150. Under different pressures, the ability of the gas to carry water molecules is different. The pressure controller 180 mainly controls the total gas pressure in the water storage tank 120 to make the air pressure within a preset range, and controls the content of water molecules carried by the gas to meet the requirements of different processes for air pressure.
[0063] The pressure of the wet oxygen stream is crucial for the reaction rate and uniformity. The pressure controller 180 can ensure that the pressure remains constant during the process of the gas carrying moisture and entering the reaction zone, thus ensuring the stability of the oxidation reaction.
[0064] Specifically, the pressure controller 180 can be provided on the second pipeline 150 or inside the water storage tank. The pressure controller 180 can be signal-connected to the valves of the first oxygen source 130 and the nitrogen source 170. The pressure controller 180 sends control signals to the valves of the first oxygen source 130 and the nitrogen source 170 according to the detected pressure on the second pipeline 150 to adjust their gas output, so as to control the air pressure inside the water storage tank.
[0065] In one embodiment, the pressure controlled by the pressure controller 180 is 0.1 - 1 atm.
[0066] Different oxidation reactions have specific requirements for gas pressure. The pressure controlled by the pressure controller 180 is 0.1 - 1 atm. Precise pressure control can provide a stable reaction environment and ensure the smooth progress of the reaction process.
[0067] Example 7
[0068] On the basis of the first embodiment, the water storage tank 120 is filled with high-purity water.
[0069] Pure water can ensure more stable and efficient chemical reactions during the oxidation process, avoiding unstable reaction rates or product quality degradation caused by interference from impurities in the water (such as calcium, magnesium, sodium, etc.).
[0070] By using high-purity water, the system can ensure that the moisture in the wet oxygen stream is pure and free of impurities, thereby improving the purity and efficiency of the oxidation reaction. The application of high-purity water can not only improve product quality but also effectively protect equipment, meeting the strict process requirements for various reaction environments.
[0071] Example 8
[0072] As Figure 3 shown, on the basis of the first embodiment, the second pipeline 150 includes a first branch 151 and a second branch 152. The first branch 151 communicates with the furnace mouth of the reaction furnace 110, and the second branch 152 communicates with the furnace tail of the reaction furnace 110.
[0073] The first branch 151 is connected to the furnace mouth of the reactor 110, allowing the humidified oxygen stream to enter the front end of the reactor 110. The second branch 152 is connected to the furnace tail of the reactor 110, guiding the humidified oxygen stream into the rear part of the reactor 110. The design of the two branches can ensure a more uniform gas distribution in the reactor 110, avoiding the problem of gas flow concentrating in a certain area, thereby improving the uniformity and efficiency of the overall reaction. By ensuring sufficient oxygen supply in different areas of the reactor 110, the reactants can fully react throughout the reactor 110, reducing the generation of unreacted substances and improving product quality. The uniform gas flow helps maintain the temperature balance in the reactor 110, avoiding local overheating or overcooling and improving the stability of the process.
[0074] Example 9
[0075] As Figures 5 to 7 shown, based on the first embodiment, it further includes a second oxygen source 190, and the second oxygen source 190 is connected to the reactor through a third pipeline 191.
[0076] The first oxygen source 130 is responsible for providing wet oxygen, which is transported to the reactor 110 through the first pipeline 140 and the second pipeline 150 to meet the reaction requirements under certain humidity conditions. The second oxygen source 190 provides dry oxygen, which is transported into the reactor 110 through the third pipeline 191 to ensure that the dry oxygen remains in its dry state before contacting the reactor 110. The design of using a dual oxygen source increases the flexibility and controllability of the system, enabling the humidity and oxygen supply to be independently adjusted according to the reaction needs.
[0077] On the one hand, during the reaction process, some steps may require wet oxygen to accelerate the reaction rate, while other steps may require dry oxygen to prevent over-oxidation or poor moisture absorption. Therefore, by using two independent oxygen sources, the oxygen supply conditions for different steps can be dynamically adjusted. On the other hand, to improve the accuracy of the oxidation process, by separately adjusting the ratio of wet oxygen and dry oxygen, the gas composition of the reaction environment can be more precisely controlled, optimizing the growth rate and quality of the oxide layer.
[0078] Embodiment Ten
[0079] As Figure 7 shown, based on the ninth embodiment, the third pipeline 191 includes a third branch 193 and a fourth branch 192. The third branch 193 is connected to the furnace mouth of the reactor 110, and the fourth branch 192 is connected to the furnace tail of the reactor 110.
[0080] The third branch 193 is connected to the furnace mouth of the reaction furnace 110, allowing the oxygen stream to enter the front end of the reaction furnace 110. The fourth branch 192 is connected to the furnace tail of the reaction furnace 110, guiding the oxygen stream into the rear part of the reaction furnace 110. The design of these two branches can ensure a more uniform distribution of oxygen in the reaction furnace 110, avoiding the problem of gas flow concentrating in a certain area, thereby improving the uniformity and efficiency of the overall reaction. By ensuring sufficient oxygen supply in different areas of the reaction furnace 110, the reactants can fully react throughout the reaction furnace 110, reducing the generation of unreacted substances and improving the product quality.
[0081] Example 11
[0082] This embodiment provides a solar cell production system, including the above-mentioned LPCVD device 100.
[0083] The beneficial effects achieved by the solar cell production system of this embodiment are similar to those achieved by the LPCVD device 100, and will not be elaborated here.
[0084] The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims
1. An LPCVD device, characterized in that, Comprising: A reaction furnace, a water storage tank, and a first oxygen source; The water storage tank is filled with water, and the water storage tank is communicated with the first oxygen source through a first pipeline; The reaction furnace is used to complete the reaction, and the reaction furnace is communicated with the water storage tank through a second pipeline.
2. The LPCVD device according to claim 1, characterized in that, One end of the first pipeline connected to the water storage tank is placed below the liquid level of the water storage tank, and one end of the second pipeline connected to the water storage tank is placed above the liquid level of the water storage tank.
3. The LPCVD device according to claim 1, characterized in that, It further includes a temperature control device, and the temperature control device is used to control the temperature of the water stored in the water storage tank.
4. The LPCVD device according to claim 3, characterized in that, The temperature control device is a temperature control barrel, and the water storage tank is placed inside the temperature control barrel.
5. The LPCVD device according to claim 1, characterized in that, It further includes a nitrogen source, and the nitrogen source is communicated with the first pipeline.
6. The LPCVD device according to claim 1 or 5, characterized in that, It further includes a pressure controller, and the pressure controller is used to control the total gas pressure in the water storage tank.
7. The LPCVD device according to claim 6, wherein, The pressure controlled by the pressure controller is 0.1 - 1 atm.
8. The LPCVD device according to claim 1, wherein A water replenishing port is provided on the water storage tank.
9. The LPCVD device according to claim 1, wherein The second pipeline includes a first branch and a second branch. The first branch is communicated with the furnace mouth of the reaction furnace, and the second branch is communicated with the furnace tail of the reaction furnace.
10. The LPCVD device according to claim 1, characterized in that, It further includes a second oxygen source, and the second oxygen source is connected to the reaction furnace through a third pipeline.
11. The LPCVD device according to claim 10, characterized in that, The third pipeline includes a third branch and a fourth branch. The third branch is communicated with the furnace mouth of the reaction furnace, and the fourth branch is communicated with the furnace tail of the reaction furnace.
12. A solar cell production system, characterized in that, Comprising the LPCVD device according to any one of claims 1 to 11.