Heating device and semiconductor manufacturing apparatus
By setting support members in angular contact at the connection position of the heater and the stage, the problem of down-collapse of the heater edge is solved, and the wafer and heater are fully contacted, which improves product yield and reduces production costs.
Patent Information
- Application Number
- CN202422501092.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-16
- Publication Date
- 2025-08-05
- Estimated Expiration
- 2034-10-16
AI Technical Summary
The edge of the heater is prone to deform and collapse under long-term high temperature environments, resulting in incomplete contact between the wafer and the heater surface, affecting product yield.
A support is provided at the connection position between the heater and the stage, which abuts against the edge of the heater and forms an angular contact with the stage, providing a support force to the center to offset the force of the edge collapse.
Prevent the heater edge from collapse, ensure that the wafer is in full contact with the heater surface, improve product yield and reduce production costs.
Smart Images
Figure CN223189256U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of semiconductor manufacturing, in particular to a heating device and semiconductor manufacturing equipment. Background Art
[0002] CVD (Chemical Vapor Deposition) refers to the process of introducing vapors of gaseous or liquid reactants containing the elements that make up the thin film, along with other gases required for the reaction, into a reaction chamber, where a chemical reaction occurs on the substrate surface to form a thin film. The entire process requires a high-temperature environment. However, under long-term high-temperature conditions, the heater surface becomes fragile and easily deformed. As the heater moves up and down, it is susceptible to gravity, causing the heater edge to collapse and deform. This can lead to incomplete contact between the wafer and the heater surface, causing abnormalities in the wafer film growth process and reducing product yield.
[0003] Based on this, how to prevent the heater edge from collapsing, resulting in incomplete contact between the wafer and the heater surface, and affecting product yield has become a technical problem that technicians in this field need to solve. Utility Model Content
[0004] The purpose of the present invention is to provide a heating device and semiconductor manufacturing equipment to prevent the problem that the edge of the heater collapses, resulting in incomplete contact between the wafer and the heater surface, and affecting the product yield.
[0005] In order to achieve the above-mentioned object, the utility model provides a heating device, comprising: a heater and a carrier;
[0006] The carrier is used to carry the heater;
[0007] The heater has a heating surface, and the heating surface is used to heat the wafer;
[0008] A support member is provided at the position where the heater is connected to the carrier, and the support member abuts against the edge of the heater to provide a supporting force to the edge of the heater;
[0009] Wherein, the contact surface between the support member and the edge of the heater and the plane where the carrier is located are arranged at an angle.
[0010] Optionally, the heating surface is located on a surface of the heater away from the carrier, and the support member is arranged to protrude toward a direction close to the heating surface.
[0011] Optionally, the heater covers a portion of the carrier and is arranged to protrude relative to the plane where the carrier is located.
[0012] Optionally, the protruding direction of the heater is perpendicular to the plane where the carrier is located.
[0013] Optionally, a mounting area is left between the edge of the heater and the edge of the carrier, and the mounting area is used to place the edge ring.
[0014] Optionally, the contact surface is arranged to be inclined from a position of the heater away from the installation area toward an edge of the heater.
[0015] Optionally, the angle between the contact surface and the plane where the carrier is located is α, then 30°≤α≤55° is satisfied.
[0016] Optionally, the support member is arranged around the edge of the heater.
[0017] Optionally, the heating device further includes a support rod, which is connected to the carrier and is used to drive the carrier and the heater to move in a direction perpendicular to the plane where the carrier is located.
[0018] In order to achieve the above-mentioned object, the present invention also provides a semiconductor manufacturing equipment, comprising the heating device as described above.
[0019] Compared with existing heaters, the heating device and semiconductor manufacturing equipment provided by this application have the following advantages:
[0020] The heating device provided in the present application provides a supporting force to the edge of the heater by arranging a supporting member at the connection position between the heater and the carrier, and abutting against the edge of the heater; at the same time, the contact surface between the supporting member and the edge of the heater is an inclined surface, so that the supporting member can provide a force from the edge of the heater toward the center, and constitute a reaction force with the force of the edge of the heater collapsing toward the surrounding areas, thereby ensuring that the edge of the heater will not collapse during movement, thereby allowing the wafer placed on the heating surface to be in complete contact with the heater, further improving the product yield.
[0021] The semiconductor manufacturing equipment provided in the present application, by using the above-mentioned heating device, sets a support member at the connection position of the heater and the carrier, and provides supporting force to the edge of the heater through the support member, thereby ensuring that the edge of the heater will not collapse during the movement, so that the wafer can be in complete contact with the heater, thereby improving the product yield, reducing the increase in production costs caused by product quality problems, and improving the production efficiency of the semiconductor manufacturing equipment. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Figure 1 A schematic diagram of an existing heater after the edge thereof collapses;
[0023] Figure 2A schematic structural diagram of a heating device provided in an embodiment of the present utility model;
[0024] Figure 3 A partial schematic diagram of a heating device provided in an embodiment of the present utility model;
[0025] The description of each reference numeral is as follows:
[0026] 1-heater; 2-carrier; 3-support; 4-wafer; 5-mounting area; 6-edge ring; 7-support rod; 10-heating surface. DETAILED DESCRIPTION
[0027] To further clarify the objectives, advantages, and features of the present invention, the present invention is further described below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are highly simplified and not drawn to scale, and are intended solely to facilitate and clearly illustrate the objectives of the embodiments of the present invention. Furthermore, the structures shown in the drawings are often portions of the actual structures. In particular, different drawings may require different emphases and may use different scales.
[0028] As used in this specification, the singular forms "a", "an", and "the" include plural referents, the term "or" is generally used to include "and / or", the term "several" is generally used to include "at least one", and the term "at least two" is generally used to include "two or more". In addition, the terms "first", "second", and "third" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features specified as "first", "second", and "third" may explicitly or implicitly include one or at least two of the features, "one end" and "the other end" and "proximal end" and "distal end" generally refer to two corresponding parts, which include not only endpoints, and the terms "mounted", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication between two elements or the interaction relationship between two elements. In addition, as used in this specification, an element disposed on another element generally only indicates that there is a connection, coupling, cooperation or transmission relationship between the two elements, and the connection, coupling, cooperation or transmission between the two elements may be direct or indirect through an intermediate element, and it cannot be understood as indicating or implying a spatial positional relationship between the two elements, that is, one element may be in any orientation such as inside, outside, above, below or to one side of another element, unless otherwise clearly indicated in the content. The terms "upper", "lower", "top" and "bottom" are generally relative positional relationships arranged in the direction of gravity; the terms "vertical" and "vertical direction" generally refer to the direction of gravity, which is generally perpendicular to the ground, and "horizontal" and "horizontal plane direction" generally refer to the direction parallel to the ground; for ordinary technicians in this field, the specific meanings of the above terms in this specification can be understood according to specific circumstances.
[0029] The purpose of the present invention is to provide a heating device and semiconductor manufacturing equipment to prevent the problem that the edge of the heater collapses, resulting in incomplete contact between the wafer and the heater surface, and affecting the product yield.
[0030] Please refer to Figure 1 As those skilled in the art will understand, the heater 1 working in a high temperature environment for a long time will cause the surface material to become brittle and prone to deformation. At the same time, in the CVD (Chemical Vapor Deposition) process, the heater 1 needs to move up and down. Under the influence of gravity, the heater 1, especially the edge area, is prone to collapse and deformation, making the contact surface between the heater 1 and the wafer 4 uneven, resulting in incomplete contact between the wafer 4 and the heater 1 (such as Figure 1As shown), anomalies occur during the film growth process, thereby affecting the product yield. Based on this, the present embodiment provides a heating device and semiconductor manufacturing equipment, by adding a support member at the connection position between the heater 1 and the carrier 2, and making the support member abut against the edge of the heater 1 to support the edge of the heater 1, thereby preventing the edge of the heater 1 from collapsing, thereby affecting the product yield. It should be noted that this embodiment only takes the CVD process as an example, and does not mean that the heating device provided in this embodiment can only be used in the CVD process. As long as heating is required and the product yield is easily affected by the deformation of the heater, it can be used. This embodiment does not limit this.
[0031] Please refer to Figure 2 and Figure 3 The utility model provides a heating device, comprising: a heater 1 and a carrier 2; the carrier 2 is used to carry the heater 1; the heater 1 has a heating surface 10, and the heating surface 10 is used to heat the wafer 4; a support member 3 is provided at the position where the heater 1 is connected to the carrier 2, and the support member 3 is in contact with the edge of the heater 1 to provide a supporting force to the edge of the heater 1; wherein the contact surface between the support member 3 and the edge of the heater 1 and the plane where the carrier 2 is located is set at an angle. As those skilled in the art will appreciate, in the CVD process, temperature has a significant impact on the growth quality of the wafer 4. Therefore, the heater 1 is an important component of the CVD machine. It can be a resistive heater 1. By applying a DC voltage or current to the metal resistive heater 1, the heater 1 itself generates Joule heat, which is then transferred to the wafer 4 through heat conduction and heat radiation to heat it. It can also be an induction heater 1. By applying a high-frequency current to the induction coil, the high-frequency changing electric field generates a high-frequency changing magnetic field in space. The magnetic field radially penetrates the entire heater 1, causing huge eddy currents to be generated on the surface of the heater 1, rapidly heating it, and ultimately transferring the heat to the wafer 4 through heat conduction. Therefore, no matter which of the above heaters 1 is used, the surface of the heater 1 needs to be made of a material with strong thermal conductivity, such as metal materials such as copper and silver, or non-metallic materials such as graphite. In this embodiment, the high temperature resistance of the support member 3 needs to be stronger than that of the heater 1. The support member 3 can be directly made of metal alloys with higher melting points such as tantalum hafnium carbide alloy, silicon carbide, titanium carbide, etc., or it can be made by spraying high temperature resistant coatings on the surface of conventional metal materials, such as phosphate lead powder coatings.
[0032] As an optional embodiment, the support member 3 is arranged around the edge of the heater 1 to Figure 2For example, the cross-sectional shape of the support member 3 in the direction perpendicular to the carrier 2 is a right triangle. The contact surface between the support member 3 and the edge of the heater 1 needs to be set at an angle to the plane where the carrier 2 is located, that is, set as an inclined surface, so as to provide a supporting force directed to the center of the heater 1 to the edge of the heater 1, thereby achieving support. It should be noted that the contact surface between the support member 3 and the edge of the heater 1 cannot be set as a horizontal plane or a vertical plane. It can only provide horizontal or vertical supporting force and cannot offset the force of the edge of the heater 1 collapsing in all directions, so it cannot form effective support; the contact surface between the support member 3 and the edge of the heater 1 cannot be set as an arc surface. The supporting force it provides changes direction with the change of the curvature, and it cannot form a concentrated supporting force, and it cannot form effective support. Of course, in other embodiments, the cross-sectional shape of the support member 3 in the direction perpendicular to the carrier 2 can also be a trapezoid, an isosceles triangle or other irregular shapes with inclined surfaces. Those skilled in the art can reasonably configure the material, shape and setting position of the support member 3 according to actual conditions, and this embodiment does not limit this.
[0033] With such configuration, a support member 3 is provided at the connection position between the heater 1 and the carrier 2, and is pressed against the edge of the heater 1, thereby providing a supporting force to the edge of the heater 1 to prevent the edge of the heater 1 from collapsing; at the same time, the contact surface between the support member 3 and the edge of the heater 1 is an inclined surface, so that the support member 3 can provide a force from the edge of the heater 1 toward the center, and constitute a reaction force with the force of the edge of the heater 1 collapsing toward the surrounding areas, thereby ensuring that the edge of the heater 1 will not collapse during movement, thereby allowing the wafer 4 placed on the heating surface 10 to fully contact the heater 1, further improving the product yield.
[0034] As an alternative example, see Figure 2 , the heating surface 10 is located on the surface of the heater 1 away from the carrier 2, and the support member 3 is protruded toward the direction close to the heating surface 10. Furthermore, the heater 1 covers a portion of the carrier 2 and is protruded relative to the plane where the carrier 2 is located. Furthermore, the protruding direction of the heater 1 is perpendicular to the plane where the carrier 2 is located. Figure 2 In the illustrated example, the heater 1 is arranged to protrude from the carrier 2, and the support member 3 is arranged to protrude in a direction close to the heating surface 10 to form a support surface. The heating surface 10 is the top surface of the heater 1 and is arranged parallel to the plane of the carrier 2. In other embodiments, the heater 1 can also be arranged to be recessed into the carrier 2, the size of the heater 1 can also be adapted to the carrier 2, and the protrusion direction of the heater 1 can also be arranged at an angle to the plane of the carrier 2, that is, the heating surface 10 is arranged at an angle to the plane of the carrier 2. Those skilled in the art can reasonably configure the relative relationship between the heater 1 and the carrier 2 based on the spatial layout of the machine.
[0035] In an alternative embodiment, please refer to Figure 3 A mounting area 5 is left between the edge of the heater 1 and the edge of the carrier 2. The mounting area 5 is used to place an edge ring 6. As those skilled in the art will appreciate, based on process requirements, an edge ring 6 needs to be provided at the edge of the heater 1. The height of the edge ring 6 in the direction perpendicular to the carrier 2 is adapted to that of the heater 1. While the heater 1 is heating the wafer 4, the edge ring 6 contacts the wafer 4 to support the wafer 4. Furthermore, after the heater 1 is heated and cooled, the edge ring 6 contacts the wafer 4 to achieve heat exchange. Therefore, the edge ring 6 needs to be provided on the periphery of the heater 1.
[0036] Furthermore, the contact surface is inclined from the position of the heater 1 away from the installation area 5 toward the edge of the heater 1. Figure 3 As mentioned above, the contact surface needs to be set as an inclined surface. Therefore, in order to provide a supporting force from the edge toward the center to the edge of the heater 1, the contact surface needs to be inclined from the center to the edge. Furthermore, the angle between the contact surface and the plane where the carrier 2 is located is α, which satisfies 30°≤α≤55°. In order to ensure that the support member 3 can provide sufficient and concentrated supporting force, the angle between the contact surface and the plane where the carrier 2 is located should be between 30° and 55°. Of course, in some other embodiments, affected by the relative position relationship between the heater 1 and the carrier 2, there may also be a certain angle between the heater 1 and the plane where the carrier 2 is located. Therefore, at this time, the angle between the contact surface and the plane where the carrier 2 is located should also be adjusted accordingly, thereby ensuring that the angle of the supporting force can form a reaction force with the force of the collapse of the edge of the heater 1 to achieve effective support.
[0037] Please refer to Figure 2 The heating device further includes a support rod 7 connected to the carrier 2 and configured to drive the carrier 2 and heater 1 to move in a direction perpendicular to the plane of the carrier 2. It should be noted that the support rod 7 can be a telescopic rod to drive the carrier 2 and heater 1 to move synchronously; the support rod 7 can also be a guide rod, allowing the carrier 2 and heater 1 to move up and down along the extension direction of the support rod 7 under the drive of an external drive device (such as a motor). Those skilled in the art can configure the support rod 7 according to actual circumstances.
[0038] In another embodiment, the present invention also provides a semiconductor manufacturing equipment, including the heating device as described above. It should be noted that, taking the CVD process as an example, the CVD machine generally includes a reaction chamber, a heating and cooling system, a gas supply and delivery system, and a detection and control system; wherein the heating device is arranged in the heating and cooling system; and the heating and cooling system, the gas supply and delivery system, and the detection and control system are all arranged in the reaction chamber; in addition to the heating device, the heating and cooling system may also include a chamber cooling system and an exhaust gas cooling system, which mainly provide source cracking energy for the CVD process, obtain a uniform temperature field, and can achieve dynamic requirements such as uniform and rapid temperature rise and fall, and short stabilization time; the gas supply and delivery system is mainly used to provide reaction gas, chamber purge gas (mostly N2), heater protection gas (mostly H2), etc. to the reaction chamber; the detection and control system is used to control the electrical components such as high-power power supply, pump, pressure gauge, valve, etc. in the entire machine, as well as mechanical movements such as the opening and closing of the cavity and the rotation of the wafer stage, so that they can work together.
[0039] With such configuration, by using the above-mentioned heating device, a support member 3 is set at the connection position between the heater 1 and the carrier 2, and a supporting force is provided to the edge of the heater 1 through the support member 3, thereby ensuring that the edge of the heater 1 will not collapse during the movement, so that the wafer 4 can be in complete contact with the heater 1, thereby improving the product yield, reducing the increase in production costs caused by product quality problems, and improving the production efficiency of semiconductor manufacturing equipment.
[0040] In summary, in the heating device and semiconductor manufacturing equipment provided in the embodiments of the present invention, the heating device includes: a heater and a carrier; the carrier is used to support the heater; the heater has a heating surface, and the heating surface is used to heat the wafer; a support member is provided at the position where the heater is connected to the carrier, and the support member is abutted against the edge of the heater to provide supporting force to the edge of the heater; wherein the contact surface between the support member and the edge of the heater and the plane where the carrier is located is set at an angle.
[0041] With this configuration, a support member is provided at the connection position between the heater and the carrier, and is pressed against the edge of the heater, thereby providing a supporting force to the edge of the heater to prevent the edge of the heater from collapsing; at the same time, the contact surface between the support member and the edge of the heater is an inclined surface, so that the support member can provide a force from the edge of the heater toward the center, which constitutes a reaction force to the force of the edge of the heater collapsing toward the surrounding areas, ensuring that the edge of the heater will not collapse during movement, thereby allowing the wafer placed on the heating surface to be in complete contact with the heater, further improving the product yield.
[0042] Furthermore, by using the above-mentioned heating device, a support member is set at the connection position between the heater and the carrier, and the support member provides supporting force to the edge of the heater, ensuring that the edge of the heater will not collapse during movement, so that the wafer can be in complete contact with the heater, thereby improving product yield, reducing the increase in production costs caused by product quality problems, and improving the production efficiency of semiconductor manufacturing equipment.
[0043] The above description is only a description of the preferred embodiment of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.
Claims
1. A heating device, characterized in that: include: Heater and carrier; The carrier is used to carry the heater; The heater has a heating surface, and the heating surface is used to heat the wafer; A support member is provided at the position where the heater is connected to the carrier, and the support member abuts against the edge of the heater to provide a supporting force to the edge of the heater; Wherein, the contact surface between the support member and the edge of the heater and the plane where the carrier is located are arranged at an angle.
2. The heating device according to claim 1, wherein The heating surface is located on a surface of the heater away from the carrier, and the support member is arranged to protrude toward a direction close to the heating surface.
3. The heating device according to claim 1, wherein The heater covers a portion of the carrier and is arranged to protrude relative to the plane where the carrier is located.
4. The heating device according to claim 3, characterized in that An installation area is reserved between the edge of the heater and the edge of the carrier, and the installation area is used for placing an edge ring.
5. The heating device according to claim 4, characterized in that The contact surface is inclined from a position of the heater away from the installation area toward an edge of the heater.
6. The heating device according to claim 5, characterized in that The angle α between the contact surface and the plane where the carrier is located satisfies 30°≤α≤55°.
7. The heating device according to claim 3, wherein The protruding direction of the heater is perpendicular to the plane where the carrier is located.
8. The heating device according to claim 1, wherein The support member is disposed around an edge of the heater.
9. The heating device according to claim 1, wherein The heating device further includes a support rod connected to the carrier and configured to drive the carrier and the heater to move in a direction perpendicular to the plane where the carrier is located.
10. A semiconductor manufacturing equipment, characterized in that: The heating device comprises the heating device according to any one of claims 1 to 9.